CN110596649A - T/R assembly - Google Patents
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- CN110596649A CN110596649A CN201910884941.9A CN201910884941A CN110596649A CN 110596649 A CN110596649 A CN 110596649A CN 201910884941 A CN201910884941 A CN 201910884941A CN 110596649 A CN110596649 A CN 110596649A
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
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- 230000017525 heat dissipation Effects 0.000 description 3
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- 238000004806 packaging method and process Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Networks & Wireless Communication (AREA)
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- Radar, Positioning & Navigation (AREA)
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Abstract
The invention provides a T/R assembly, which comprises a microwave transmitting link and a power supply control circuit, wherein a GaN power chip is adopted for driving a power amplifier, a GaN power amplifier slide glass is adopted for a final-stage high-power amplifier, 60W pulse power output of the transmitting link is realized, and an FBAR band-pass filter is adopted for a receiving branch, so that the requirement of high out-of-band rejection is met; the power control circuit is realized by adopting an anti-irradiation reinforced silicon-based chip design and comprises a voltage modulation circuit and a wave control circuit. The voltage modulation circuit realizes leakage voltage modulation, grid voltage modulation and low-noise amplification chip voltage modulation of the power amplifier chip, and the wave control circuit realizes amplitude and phase adjustment of the TR component and power modulation of the transceiving channel by serial-to-parallel processing of peripheral time sequence signals. The assembly is packaged in an integrated airtight mode, and the air tightness of the assembly is guaranteed by adopting a radio frequency wave bead and SMA matching structure. The invention realizes light weight, miniaturization and high reliability design and meets the use requirement of satellite-borne.
Description
Technical Field
The invention relates to a T/R assembly.
Background
The active detection and passive microwave composite detection technology is a main means for obtaining microwave radiation and scattering information of a scene and a target, wherein the active detection can obtain target information by actively transmitting electromagnetic waves and receiving echo signals by an antenna after the electromagnetic waves are reflected by the target, and the target information can be processed, so that the working distance is long and the distance resolution is high; the passive detection distinguishes the target and the background through the signal difference of target and background radiation and scattering, passively receives electromagnetic wave signals and has better concealment. The active radar scattering information and the passive radiometer detection system are subjected to rechecking detection, the advantages of passive detection and active detection are achieved, the obtained target information can be greatly widened, and the anti-interference performance and the target identification rate of the system are improved.
The active and passive detection system of the L wave band separates active and passive channels according to different working frequencies, wherein the active channel adopts a phased array antenna SAR system, and the large breadth is realized through phased array beam scanning. As a key component of a phased array antenna, electrical performance, size weight, and process stability affect the overall performance of the antenna. The traditional L-waveband high-power T/R assembly adopts a packaging power tube, and the microwave and power supply control are independently designed, so that the number of devices is large, the size is large, the product is heavy, the size is large, the reliability is low, and in order to improve the integration level and the reliability of the phased array antenna of the active and passive detection system, the satellite-borne high-power miniaturized T/R assembly which meets the requirements needs to be developed from the aspects of improving the emission power, the stability, the reliability, the volume weight and the like of the assembly.
Disclosure of Invention
The invention aims to provide a T/R assembly.
To solve the above problems, the present invention provides a T/R assembly comprising:
the method comprises the following steps: two T/R channels, each T/R channel comprising:
microwave link and power control circuit, and each T/R passageway is used for realizing independent signal control, wherein:
the microwave link of each T/R channel comprises a transmitting branch and a receiving branch, wherein in the transmitting branch, a microwave input signal passes through a six-digit control phase shifter, a single-pole triple-throw switch, a drive amplifier chip and a final power amplifier slide glass to be subjected to phase shift processing and amplified, then passes through an annular isolator and is finally output to an antenna array element; in the receiving branch, after an antenna echo signal passes through an annular isolator, the antenna echo signal passes through an amplitude limiter, a first-stage low-noise amplification chip, a band-pass filter, a 6-bit digital attenuator, a second-stage low-noise amplification chip, a single-pole triple-throw switch and a six-bit digital phase shifter, and is subjected to amplitude limiting, amplification, filtering, attenuation and phase-shifting processing and output to a frequency synthesis system;
the power supply control circuit includes: the transmitting branch circuit leakage voltage modulation circuit, the receiving branch circuit leakage voltage modulation circuit, the grid voltage modulation circuit and the serial-to-parallel wave control circuit realize amplitude-phase adjustment of a microwave chip in a microwave link of the T/R component and power modulation of the transmitting-receiving branch circuit by processing peripheral time sequence control signals.
Furthermore, in the above T/R module, the microwave link of the T/R module is implemented by using a discrete MMIC, in the transmitting branch, the driving and amplifying chip is a GaN power amplifier chip, and the final power amplifier chip is a GaN power amplifier chip, and the high-power microwave signal output of the module is realized by cascade connection.
Further, in the above T/R module, in the receiving branch, the band pass filter 10 is an FBAR band pass filter.
Furthermore, in the above T/R module, the power control circuit entirely uses a silicon-based chip reinforced by radiation resistance, wherein the +28V leakage voltage modulation and gate voltage modulation functions of the power amplifier chip are integrated on a multifunctional driving modulator, and the power amplifier has a negative voltage protection function, so as to prevent the power amplifier from failing in performance or burning out due to abnormal gate voltage loading and leakage voltage loading alone
Further, the T/R module further includes a power division coupling network disposed behind the ring isolator 7, and configured to couple the energy of the transmission output signal to a part of energy, and then perform two-path signal synthesis and output to the scaling subsystem; and inputting the received calibration signal into two channels through the power divider, and respectively coupling the signals into the receiving branches.
Further, in the T/R module, the output power of the transmitting branch of the microwave link is 60W, the noise factor of the receiving branch is 2.2dB, the receiving gain is 30dB, and the out-of-band rejection at the central frequency point ± 50MHz is greater than 25 dBc.
Furthermore, in the T/R component, clock, data and pulse command signals are shared between the two T/R channels, and the on-off of the power supplies of the two channels is controlled through different latching signals, so that the independent work of the microwave links of the two channels is realized.
Furthermore, in the above T/R assembly, the power control circuit and the control low-frequency interface adopt a two-point two-wire design, the case body adopts an integrated structure design, and the radio-frequency interface adopts radio-frequency beads, and is first high-frequency induction welded on the case body and then is inserted into the SMA radio-frequency connector.
Compared with the prior art, the invention comprises a microwave transmitting link and a power supply control circuit, and is realized by the following scheme: the drive power amplifier adopts a GaN power chip, the final-stage high-power amplifier adopts a GaN power amplifier slide glass, the 60W pulse power output of a transmitting link is realized, and the receiving branch adopts an FBAR band-pass filter, so that the requirement of high out-of-band rejection is met; the power control circuit is realized by adopting an anti-irradiation reinforced silicon-based chip design and comprises a voltage modulation circuit and a wave control circuit. The voltage modulation circuit realizes leakage voltage modulation, grid voltage modulation and low-noise amplification chip voltage modulation of the power amplifier chip, and the wave control circuit realizes amplitude and phase adjustment of the TR component and power modulation of the transceiving channel by serial-to-parallel processing of peripheral time sequence signals. In addition, a power division coupling network is designed to provide a coupling scaling input signal for a scaling subsystem in the active and passive composite microwave detection load subsystem. The assembly is packaged in an integrated airtight mode, and the air tightness of the assembly is guaranteed by adopting a radio frequency wave bead and SMA matching structure. Compared with the traditional L-band high-power T/R assembly which adopts an independent design mode of packaging a power tube, microwave and power supply control, the invention realizes the design of light weight, miniaturization and high reliability and meets the use requirement of satellite-borne.
Drawings
FIG. 1 is a topological block diagram of a spaceborne L-band GaN high-power miniaturized T/R component according to an embodiment of the invention;
FIG. 2 is a schematic diagram of an exemplary cassette configuration of FIG. 1;
fig. 3 is a schematic diagram of an exemplary structure of the power splitting coupling network in fig. 1;
in the figure, 1 microwave link, 2 power control circuit, 3 six-digit digital phase shifter, 4 single-pole three-throw switch, 5 drive chip, 6 last power amplifier slide, 7 annular isolator, 8 amplitude limiter, 9 first stage low noise amplification chip, 10 band-pass filter, 11 six-digit digital attenuator, 12 second stage low noise amplification chip, 13 emission branch circuit, 14 receiving branch circuit, 15 grid voltage modulation circuit, 16 series-parallel wave control circuit, 17 power division coupling network, 18 radio frequency SMA plug, 19 radio frequency bead, 20 power control low frequency connector, 21 integrated box structure, 22 inner cover plate, 23 outer cover plate.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
The invention provides a T/R assembly, comprising: two T/R channels, each T/R channel comprising: microwave link 1 and power control circuit 2, and each T/R channel is used to implement independent signal control, where:
the microwave link of each T/R channel comprises a transmitting branch and a receiving branch, wherein in the transmitting branch, a microwave input signal passes through a six-digit control phase shifter 3, a single-pole triple-throw switch 4, a drive amplifier chip 5 and a final-stage power amplifier slide 6 to be subjected to phase shifting treatment and amplified, then passes through an annular isolator 7, and finally is output to an antenna array element; in the receiving branch, after passing through an annular isolator, an antenna echo signal passes through an amplitude limiter 8, a first-stage low-noise amplification chip 9, a band-pass filter 10, a 6-bit digital attenuator 11, a second-stage low-noise amplification chip 12, a single-pole three-throw switch and a six-bit digital phase shifter, and is subjected to amplitude limiting, amplification, filtering, attenuation and phase shifting processing and output to a frequency synthesis system;
the power supply control circuit includes: the transmitting branch leakage voltage modulation circuit 13, the receiving branch leakage voltage modulation circuit 14, the grid voltage modulation circuit 15 and the serial-parallel wave control circuit 16 realize amplitude-phase adjustment of a microwave chip in a microwave link of the T/R component and power modulation of the transmitting-receiving branch by processing peripheral time sequence control signals.
In an embodiment of the T/R assembly of the present invention, the microwave link of the T/R assembly is implemented by using a discrete MMIC, in the transmitting branch, the driving and amplifying chip 5 is a GaN power amplifier chip, and the final power amplifier chip 6 is a GaN power amplifier chip, and the high-power microwave signal output of the assembly is realized by cascade connection.
In an embodiment of the T/R component of the present invention, in the receiving branch, the band pass filter 10 is an FBAR band pass filter.
The FBAR band-pass filter is cascaded behind the amplitude limiting low-noise amplifier chip, and the requirement of high out-of-band rejection is met on the premise of not influencing the noise coefficient;
in an embodiment of the T/R component of the present invention, the power control circuit is entirely implemented by a silicon-based chip with reinforced radiation resistance, wherein the +28V leakage voltage modulation and gate voltage modulation functions of the power amplifier chip are integrated on a multifunctional driving modulator, and the power amplifier has a negative voltage protection function, so as to prevent the performance failure or burnout of the power amplifier due to abnormal gate voltage loading and independent leakage voltage loading.
In an embodiment of the T/R component of the present invention, the present invention further includes a power division coupling network 17 disposed behind the annular isolator 7, and configured to couple part of energy of the transmitted output signal, perform two-path signal synthesis, and output the two-path signal to the scaling subsystem; and inputting the received calibration signal into two channels through the power divider, and respectively coupling the signals into the receiving branches.
In an embodiment of the T/R component of the present invention, the output power of the transmitting branch of the microwave link is 60W, the noise factor of the receiving branch is 2.2dB, the receiving gain is 30dB, and the out-of-band rejection at the central frequency point ± 50MHz is greater than 25 dBc.
In one embodiment of the T/R component, clock, data and pulse instruction signals are shared between two T/R channels, and the on-off of power supplies of the two channels is controlled through different latching signals respectively, so that independent work of microwave links of the two channels is realized.
In one embodiment of the T/R assembly, the power supply control circuit and the control low-frequency interface adopt a double-point double-wire design, the box body adopts an integrated structure design, the radio-frequency interface adopts radio-frequency wave beads, the radio-frequency wave beads are firstly subjected to high-frequency induction welding on the box body and then are oppositely inserted with the SMA radio-frequency connector, and the air tightness requirement of the assembly is ensured.
In a specific embodiment of the T/R module of the present invention, the T/R module includes a microwave transmission link and a power control circuit, and the present invention is implemented by the following scheme: the drive power amplifier adopts a GaN power chip, the final-stage high-power amplifier adopts a GaN power amplifier slide glass, the 60W pulse power output of a transmitting link is realized, and the receiving branch adopts an FBAR band-pass filter, so that the requirement of high out-of-band rejection is met; the power control circuit is realized by adopting an anti-irradiation reinforced silicon-based chip design and comprises a voltage modulation circuit and a wave control circuit. The voltage modulation circuit realizes leakage voltage modulation, grid voltage modulation and low-noise amplification chip voltage modulation of the power amplifier chip, and the wave control circuit realizes amplitude and phase adjustment of the TR component and power modulation of the transceiving channel by serial-to-parallel processing of peripheral time sequence signals. In addition, a power division coupling network is designed to provide a coupling scaling input signal for a scaling subsystem in the active and passive composite microwave detection load subsystem. The assembly is packaged in an integrated airtight mode, and the air tightness of the assembly is guaranteed by adopting a radio frequency wave bead and SMA matching structure. Compared with the traditional L-band high-power T/R assembly which adopts an independent design mode of packaging a power tube, microwave and power supply control, the invention realizes the design of light weight, miniaturization and high reliability and meets the use requirement of satellite-borne.
The invention aims to provide an L-band GaN high-power miniaturized T/R component suitable for an aerospace working environment, and aims to solve the technical problems of heavy products, large volume, low efficiency, low reliability and the like of the traditional L-band high-power T/R component.
Due to the adoption of the technical scheme, compared with the prior art, the invention has the following advantages and positive effects:
in the satellite-borne high-power miniaturized T/R component with GaN in the L waveband, in the transmitting branch circuit of the method, a driving amplifier adopts a GaN power amplifier chip, a final power amplifier adopts a GaN power amplifier slide glass, and the high-power microwave signal output of the component is realized in a cascading way; compared with the traditional T/R component which adopts the power amplifier tube to realize high power, the GaN power amplifier carrier glass greatly reduces the volume on the premise of meeting the requirements of power and efficiency indexes, and can be assembled by adopting a micro-assembly process, thereby improving the integration level of the system, reducing the volume of the component and simplifying the structure of the component;
according to the satellite-borne high-power miniaturized T/R component with the GaN in the L waveband, in the receiving branch, the band-pass filter adopts the FBAR filter, and on the premise of the same out-of-band rejection performance, compared with a cavity filter, the size of the cavity filter is only millimeter level, and the cavity filter is heavy and complex to install and can be integrated in the T/R component;
in the method, a power supply control circuit completely uses a silicon-based chip reinforced by irradiation resistance, wherein the +28V leakage voltage modulation and grid voltage modulation functions of a power amplifier chip are integrated on a multifunctional driving modulator, and the power amplifier has a negative pressure protection function, so that the power amplifier is prevented from being disabled or burnt out due to the fact that grid voltage is not normally loaded and leakage voltage is independently loaded; compared with a common plastic-packaged discrete CMOS circuit functional device, the integrated circuit has the advantages that the size is reduced, the integration level is high, the circuit reliability is improved, and the aerospace working environment requirement is met;
the invention provides a satellite-borne high-power miniaturized T/R component with GaN in an L waveband.A power division coupling network is designed behind an annular isolator and used for coupling part of energy of a transmission output signal through a coupler, and then two paths of signals are synthesized and output to a scaling subsystem; the received calibration signals are transmitted to two channels through a power divider and are respectively coupled to receiving branches, so that the calibration signal extraction and accurate calibration of an active and passive detection system are ensured;
the satellite-borne high-power miniaturized T/R component for the GaN of the L waveband has the characteristics of simple circuit, compact structure and high reliability, has certain universality, and can be widely applied to satellite-borne, airborne and other active phased array radar systems.
The invention provides a satellite-borne high-power miniaturized T/R component with GaN in an L waveband, which is shown in the attached drawings 1-3, wherein a microwave link 1, a power supply control circuit 2, a six-bit digital phase shifter 3, a single-pole three-throw switch 4, a driving chip 5, a final-stage power amplification slide 6, an annular isolator 7, an amplitude limiter 8, a first-stage low-noise amplification chip 9, a band-pass filter 10, a six-bit digital attenuator 11, a second-stage low-noise amplification chip 12, a transmitting branch leakage voltage modulation circuit 13, a receiving branch leakage voltage modulation circuit 14, a grid voltage modulation circuit 15, a serial conversion and parallel wave control circuit 16, a power division coupling network 17, a radio frequency SMA plug 18, a radio frequency ball 19, a power supply control low-frequency connector 20, an integrated box body structure 21, an inner cover plate 22 and an outer cover plate 23 are arranged in the figure.
The T/R assembly is a two-channel assembly, and each T/R channel respectively comprises: the microwave link 1 and the power supply control circuit 2, and the two channels can realize independent signal control; wherein:
the microwave link of each T/R channel comprises a transmitting branch and a receiving branch, wherein in the transmitting branch, a microwave input signal passes through a six-digit control phase shifter 3, a single-pole triple-throw switch 4, a drive amplifier chip 5 and a final-stage power amplifier slide 6, is subjected to phase shift treatment and amplification, passes through an annular isolator 7 and is finally output to an antenna array element; in the receiving branch, after passing through the annular isolator, the antenna echo signal passes through the amplitude limiter 8, the first-stage low-noise amplification chip 9, the band-pass filter 10, the 6-bit digital control attenuator 11, the second-stage low-noise amplification chip 12, the single-pole triple-throw switch 4 and the six-bit digital control phase shifter 3, is subjected to amplitude limiting, amplification, filtering, attenuation and phase shifting processing, and is output to the frequency synthesis system.
The power supply control circuit comprises a transmitting branch circuit leakage voltage modulation circuit 13, a receiving branch circuit leakage voltage modulation circuit 14, a grid voltage modulation circuit 15 and a serial-parallel wave control circuit 16, and realizes amplitude-phase adjustment of a microwave chip in a microwave link of the TR component and power supply modulation of a transmitting-receiving branch circuit by processing peripheral time sequence control signals;
the transmitting branch power supply modulation circuit adopts a multifunctional power supply modulation chip of 24 XN, realizes the +28V leakage voltage modulation and the-2.2V grid voltage modulation functions of the GaN power amplifier, has a negative voltage protection function, and prevents the failure problem of the GaN power amplifier chip caused by abnormal power-up; the power supply modulation circuit of the receiving branch adopts a dual-path reverse power supply driving chip of the middle power supply 24 to realize the +5V voltage modulation function of the low-noise amplifier.
Fig. 3 is a schematic diagram of an exemplary power divider coupling network structure related to the T/R component in the embodiment of fig. 1, which is implemented by using a microstrip structure, a dielectric substrate is made of TMM6 material with a dielectric constant of 6.0, and includes two couplers with a coupling coefficient of-25 dB and two power dividers with an insertion loss of 3.2dBm, and two physical paths are completely the same, so that phase-amplitude consistency of two signals is ensured. The power division coupling network is arranged behind the annular isolator and is used for coupling part of energy of the emission output signal through the coupler, synthesizing two paths of signals and outputting the signals to the scaling subsystem; and the received calibration signals are input to two channels through the power divider and are respectively coupled to the receiving branches, so that the calibration signal extraction and accurate calibration of the active and passive detection systems are ensured.
In order to improve the reliability of the T/R assembly and meet the use requirement of an aerospace environment, all components in the circuit are subjected to derating design, and the I-level derating requirement in GJB/Z35-93 component reliability derating criterion is met. In the microwave link, when the functional chips are cascaded, a blocking chip capacitor is added for blocking; a 3dB ceramic fixed value attenuator is added between the two stages of power amplifiers to prevent the self-excitation caused by overlarge two-stage gain; the tantalum capacitor adopts a series design to prevent the power supply short circuit caused by the failure of the capacitor; the power supply and the control interface adopt a double-point double-line design, so that the stability and the reliability of the input signal of the component are improved.
Fig. 2 is a schematic diagram of an exemplary box structure of the T/R assembly shown in fig. 1 of the present invention, in which the device size is larger due to longer wavelength of the L-band, so the size of the higher frequency band of the box of the frequency band assembly is larger, and the box of the assembly is made of an aluminum alloy material to form an integrated structure, and a channel partition wall and a transceiving partition wall are disposed inside the box, so that the isolation between two channels of the TR is improved, and the self-excitation and oscillation phenomena caused by cavity resonance are prevented; and the width of the wall is widened properly to prevent deformation due to a large size of the case.
And (3) considering the good heat dissipation of the power devices, respectively carrying out thermal analysis and thermal design on each power device, and adopting different heat dissipation carriers and welding modes. For the high-power GaN power amplifier slide glass, the power amplifier slide glass is welded on a molybdenum-copper slide glass, and the heat dissipation surface of the power amplifier slide glass is large, so that the power amplifier slide glass is directly eutectic-welded on the box body by adopting lead-tin solder; for the GaN driving chip, firstly, gold-tin solder is welded on the molybdenum-copper slide plate at high temperature, and then the GaN driving chip is welded on the lug boss of the box body through lead-tin eutectic, so that good heat conduction of the chip is ensured; for the amplitude limiter and the low-noise amplifier, the power resistance of the annular isolator can reach more than 80W, and the isolation degree can reach more than 30dB, so the annular isolator can not generate a total reflection phenomenon and is directly adhered to a boss of the box body.
Considering the air tightness requirement of the MCM component, the radio frequency interface of the component adopts radio frequency wave beads, is welded on the box body in a high-frequency induction mode, and is plugged with the SMA radio frequency connector, so that the requirements of signal interconnection with other single machines and air tightness of the component are met simultaneously.
In the assembly designed in the embodiment, other functional devices except the capacitance-resisting device and the annular isolator adopt bare chips. The transmitting branch driving amplifier adopts a GaN power amplifier chip, the final power amplifier adopts a GaN power amplifier slide, and the high-power microwave signal output of the assembly is realized in a cascade mode; the band-pass filter adopts the FBAR filter, on the premise of the same out-of-band rejection performance, the size of the FBAR filter is heavy and complex, the size is only millimeter level, the FBAR filter can be integrated with a T/R assembly, the assembly has the advantages of high integration level, miniaturization, high efficiency, high reliability and the like, and the FBAR filter has certain universality and can be widely applied to active phased array radar systems such as satellite-borne systems and rocket-borne systems.
According to the test result, in a working frequency band, the transmitting branch can provide power gain not lower than 35dBm and output power of 60W, the pulse amplitude top drop is less than 0.5dB, the pulse rising edge/falling edge is less than 100ns, the second harmonic suppression degree is greater than 40dBc, the stray suppression degree in the full frequency band is greater than 60dBc, the consistency of the output power between two channels is not greater than 0.5dB, and the transmitting efficiency is greater than 45%; the noise coefficient of a receiving branch is not more than 2.3dB, the receiving gain is more than 30dB, the in-band gain fluctuation is not more than 1dB, and the out-of-band rejection degree at a relevant frequency point is not less than 30 dbc; each microwave link can realize six-bit displacement phase control and six-bit attenuation control, the phase-shifting precision is not more than 3 degrees, and the attenuation precision is not more than 0.5 dB; the isolation between the two channels is more than 50 dB; the size of the component body is 100mm multiplied by 76mm multiplied by 12mm, the weight is 170g, and the requirement of indexes is completely covered.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative components and steps have been described above generally in terms of their functionality in order to clearly illustrate this interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (8)
1. A T/R assembly, comprising: two T/R channels, each T/R channel comprising:
microwave link and power control circuit, and each T/R passageway is used for realizing independent signal control, wherein:
the microwave link of each T/R channel comprises a transmitting branch and a receiving branch, wherein in the transmitting branch, a microwave input signal passes through a six-digit control phase shifter, a single-pole triple-throw switch, a drive amplifier chip and a final power amplifier slide glass to be subjected to phase shift processing and amplified, then passes through an annular isolator and is finally output to an antenna array element; in the receiving branch, after an antenna echo signal passes through an annular isolator, the antenna echo signal passes through an amplitude limiter, a first-stage low-noise amplification chip, a band-pass filter, a 6-bit digital attenuator, a second-stage low-noise amplification chip, a single-pole triple-throw switch and a six-bit digital phase shifter, and is subjected to amplitude limiting, amplification, filtering, attenuation and phase-shifting processing and output to a frequency synthesis system;
the power supply control circuit includes: the transmitting branch circuit leakage voltage modulation circuit, the receiving branch circuit leakage voltage modulation circuit, the grid voltage modulation circuit and the serial-to-parallel wave control circuit realize amplitude-phase adjustment of a microwave chip in a microwave link of the T/R component and power modulation of the transmitting-receiving branch circuit by processing peripheral time sequence control signals.
2. The T/R assembly of claim 1, wherein the microwave link of the T/R assembly is implemented by using a discrete MMIC, the driving chip and the amplifying chip in the transmitting branch are GaN power amplifying chips, the last power amplifying chip is a GaN power amplifying chip, and the high-power microwave signal output of the assembly is realized by cascading.
3. The T/R component of claim 1, wherein in the receiving branch, the band pass filter 10 employs an FBAR band pass filter.
4. The T/R component of claim 1, wherein the power control circuit is entirely made of a silicon-based chip reinforced by radiation resistance, and the +28V leakage voltage modulation and grid voltage modulation functions of the power amplifier chip are integrated on a multifunctional driving modulator, and the T/R component has a negative pressure protection function to prevent the power amplifier from being disabled or burnt out due to the fact that the grid voltage is not normally loaded and the leakage voltage is loaded alone.
5. The T/R assembly according to claim 1, further comprising a power division coupling network disposed behind the ring isolator 7 for coupling a part of energy of the transmitted output signal, and performing two-way signal synthesis and output to the scaling subsystem; and inputting the received calibration signal into two channels through the power divider, and respectively coupling the signals into the receiving branches.
6. The T/R module of claim 1, wherein the output power of the transmitting branch of the microwave link is 60W, the noise figure of the receiving branch is 2.2dB, the receiving gain is 30dB, and the out-of-band rejection at the center frequency point ± 50MHz is greater than 25 dBc.
7. The T/R assembly according to claim 1, wherein clock, data and pulse command signals are shared between two T/R channels, and the on-off of the power supplies of the two channels is controlled by different latch signals respectively, so that the independent work of the microwave links of the two channels is realized.
8. The T/R assembly according to claim 1, wherein the power control circuit and the control low frequency interface adopt a double-point double-wire design, the box body adopts an integrated structure design, the radio frequency interface adopts radio frequency beads, the radio frequency beads are firstly subjected to high frequency induction welding on the box body, and then the radio frequency beads are oppositely inserted into the SMA radio frequency connector.
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| CN201910884941.9A CN110596649A (en) | 2019-09-18 | 2019-09-18 | T/R assembly |
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| CN111525937A (en) * | 2020-06-02 | 2020-08-11 | 四川灵通电讯有限公司 | Anti-burnout and distortion-free circuit system in microwave high-power communication and application method |
| CN111756334A (en) * | 2020-07-31 | 2020-10-09 | 中国电子科技集团公司第十四研究所 | Three-dimensional micro-assembly low-frequency dual-band driving power amplifier |
| CN112147583A (en) * | 2020-11-25 | 2020-12-29 | 四川斯艾普电子科技有限公司 | High-integration brick type TR assembly |
| CN112505638A (en) * | 2020-10-26 | 2021-03-16 | 北京无线电测量研究所 | Grid pulse modulation circuit of multi-channel transmitting assembly |
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| CN113285748A (en) * | 2021-04-07 | 2021-08-20 | 上海利正卫星应用技术有限公司 | Miniaturized radio frequency front-end device of satellite-borne communication system |
| CN113391272A (en) * | 2021-05-25 | 2021-09-14 | 中国电子科技集团公司第十四研究所 | W-band transmitting assembly |
| CN114362774A (en) * | 2022-01-12 | 2022-04-15 | 成都频岢微电子有限公司 | 5G NR LFEM outband suppression zero point reconfigurable structure |
| CN114401026A (en) * | 2021-12-22 | 2022-04-26 | 中国电波传播研究所（中国电子科技集团公司第二十二研究所） | TR subassembly device is synthesized to radio frequency |
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| CN111130587A (en) * | 2019-12-27 | 2020-05-08 | 上海大际电子科技有限公司 | Novel SC frequency channel broadband TR subassembly |
| CN111525937A (en) * | 2020-06-02 | 2020-08-11 | 四川灵通电讯有限公司 | Anti-burnout and distortion-free circuit system in microwave high-power communication and application method |
| CN111756334A (en) * | 2020-07-31 | 2020-10-09 | 中国电子科技集团公司第十四研究所 | Three-dimensional micro-assembly low-frequency dual-band driving power amplifier |
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| CN112147583A (en) * | 2020-11-25 | 2020-12-29 | 四川斯艾普电子科技有限公司 | High-integration brick type TR assembly |
| CN112147583B (en) * | 2020-11-25 | 2021-02-23 | 四川斯艾普电子科技有限公司 | High-integration brick type TR assembly |
| CN112751580A (en) * | 2020-12-25 | 2021-05-04 | 中国电子科技集团公司第十四研究所 | P-waveband LTCC assembly based on clock shielding and power filtering |
| CN113285748A (en) * | 2021-04-07 | 2021-08-20 | 上海利正卫星应用技术有限公司 | Miniaturized radio frequency front-end device of satellite-borne communication system |
| CN113391272A (en) * | 2021-05-25 | 2021-09-14 | 中国电子科技集团公司第十四研究所 | W-band transmitting assembly |
| CN114401026A (en) * | 2021-12-22 | 2022-04-26 | 中国电波传播研究所（中国电子科技集团公司第二十二研究所） | TR subassembly device is synthesized to radio frequency |
| CN114401026B (en) * | 2021-12-22 | 2023-12-01 | 中国电波传播研究所（中国电子科技集团公司第二十二研究所） | Radio frequency comprehensive TR assembly device |
| CN114362774A (en) * | 2022-01-12 | 2022-04-15 | 成都频岢微电子有限公司 | 5G NR LFEM outband suppression zero point reconfigurable structure |
| CN118354517A (en) * | 2024-06-18 | 2024-07-16 | 南京邮电大学 | Radio frequency transceiver module with embedded micro-channel heat dissipation structure |
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