CN110161467B - Ku wave band four-channel microwave T/R assembly - Google Patents
Ku wave band four-channel microwave T/R assembly Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 claims 11
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- 238000005516 engineering process Methods 0.000 description 12
- 238000011160 research Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 9
- 230000003321 amplification Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
- G01S7/282—Transmitters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
- G01S7/285—Receivers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
Abstract
A Ku wave band four-channel microwave T/R component is a common cavity structure combining four independent T/R channels, and is characterized in that: the multifunctional MMIC chip is a BWM499 chip; each T/R channel is provided with a power amplifier chip, a limiter chip, a channel LNA chip, a transmitting power supply modulation chip, a receiving power supply modulation chip and a wave control chip which are connected in sequence, and is also provided with a circulator isolator chip and a channel radio frequency connector which are connected with each other. The invention has the characteristics of compact structure, small volume, high wiring density, low material cost, high mechanical strength, stable chemical property, corrosion resistance and high temperature resistance, multiple channels, high performance, high reliability, high integration level, light weight, low power consumption and good heat dissipation, the output power of the transmitted pulse is more than or equal to 20W, the receiving noise coefficient is less than or equal to 3.5dB, the phase shifting precision is less than or equal to 3.5 degrees (root mean square value RMS), and the attenuation precision is less than or equal to 1dB (root mean square value RMS).
Description
Technical Field
The invention relates to a radar phased array antenna, in particular to a Ku-band four-channel microwave T/R component.
Background
The microwave transmitter and receiver (Transmitter and Receiver, abbreviated as T/R) component is one of the most important components of the active phased array radar system, one end of the component is connected with an antenna, and the other end of the component is connected with an intermediate frequency processing unit, so that a wireless transmitting and receiving system is formed, and the functions of the component are amplifying, phase shifting and attenuating signals. The performance of the system directly influences the detection effect of the whole active phased array radar system, the rapid development of the modern active phased array radar puts higher requirements on the electrical performance, the volume and the weight of a microwave T/R assembly, and particularly the volume and the weight of the microwave T/R assembly in an airborne, carrier-borne and satellite-borne radar are more strictly limited. At present, the functions and performances of the microwave T/R assembly at home and abroad are basically finished by adopting separated single-function chips. Along with the improvement of the technology and design level at home and abroad, more and more products and research projects adopt multifunctional chips. The multifunctional chip component has great advantages when applied to the chip component and the conventional strip-type component, and can greatly reduce the design difficulty, improve the reliability and reduce the volume weight when applied to the chip component; the application in conventional assemblies can greatly reduce the volume, weight and cost.
The prior patent CN109239672A of the applicant discloses a four-channel microwave T/R assembly, which is a common cavity structure integrating four independent T/R channels, and comprises a power division network respectively connected with the four independent T/R channels, wherein all components are monolithic microwave integrated circuits MMICs, the MMICs are integrally manufactured on the same multi-layer circuit substrate, the multi-chip interconnection of the MMICs is realized by adopting a multi-chip module MCM technology, the four independent T/R channels respectively provide independent amplitude and phase control and respectively comprise microwave devices shared by transmitting and receiving, and the microwave T/R assembly is characterized in that: the microwave device is a multifunctional MMIC bare chip integrated with a six-bit amplifier compensation phase shifter, a six-bit attenuator, a working state switch, a limiting low-noise amplifier and a driver for controlling phase shifting, attenuation and switching, which are shared by transmission and reception; the multilayer circuit substrate is a High-Temperature Co-fired ceramic (HTCC) multilayer circuit substrate. The method is suitable for X wave band, is mainly used for identifying medium range targets, and has lower resolution for short range targets.
Disclosure of Invention
The technical problem to be solved by the invention is to make further improvement on the prior patent CN109239672A of the applicant and provide a Ku-band four-channel microwave T/R assembly.
The technical problems of the invention are solved by the following technical proposal.
The Ku-band four-channel microwave T/R assembly is a common cavity structure integrating four independent T/R channels into one, and the common cavity structure comprises a cover plate, a shell, a T/R channel connector, a radio frequency main port connector, a power division network, a Multi-chip module (MCM) and a multifunctional monolithic microwave integrated circuit (Monolithic Microwave Integrated Circuit, abbreviated MMIC) chip, wherein the T/R channel connector and the radio frequency main port connector are respectively fixed with the shell through welding, the power division network is respectively connected with the four independent T/R channels, the multifunctional monolithic microwave integrated circuit (Monolithic Microwave Integrated Circuit, abbreviated MMIC) chip is formed by interconnecting four independent T/R channels through a Multi-chip module (Multi-chip module, abbreviated MMIC) and is integrated with a six-bit phase shifter, a six-bit attenuator, a switch and a driving amplifier, which are shared by transmission and reception, and the four independent T/R channels respectively provide independent amplitude and phase control and respectively comprise shared microwave devices for transmission and reception. The adoption of the multifunctional MMIC chip can greatly reduce the design difficulty, improve the reliability and reduce the volume, the weight and the cost; the HTCC multilayer circuit substrate can improve mechanical strength, has high wiring density, stable chemical performance, high heat dissipation coefficient, low material cost and good corrosion resistance and high temperature resistance.
The Ku-band four-channel microwave T/R component is characterized in that:
the multifunctional MMIC chip is a multifunctional MMIC chip with the model number of BWM499 manufactured by thirteenth research institute of China electronics and technology group;
each T/R channel is provided with a power amplifier chip, the power amplifier chip and the multifunctional MMIC chip are integrated on the same HTCC multilayer circuit substrate, the input end of the power amplifier chip is connected with the multifunctional MMIC chip, and the power amplifier chip has the function of carrying out high-efficiency power saturation amplification on the transmitted microwave signals;
each T/R channel is also provided with a limiter chip and a channel low noise amplifier (Low Noise Amplifier, abbreviated as LNA) chip which are connected in sequence, the limiter chip and the channel LNA chip are respectively integrated with the multifunctional MMIC chip on the same HTCC multilayer circuit substrate, the limiter chip has the function of preventing the received high-power microwave signal from burning the multifunctional MMIC chip when being input, the output end of the channel LNA chip is connected with the multifunctional MMIC chip, and the channel LNA chip has the function of amplifying the received microwave signal with low noise;
each T/R channel is also provided with a transmitting power supply modulation chip and a receiving power supply modulation chip, the transmitting power supply modulation chip and the receiving power supply modulation chip are respectively integrated with the multifunctional MMIC chip on the same HTCC multilayer circuit substrate, the input end of the transmitting power supply modulation chip and the input end of the receiving power supply modulation chip are respectively connected with the radio frequency main port connector, the output end of the transmitting power supply modulation chip is connected with the power amplifier chip, the output end of the receiving power supply modulation chip is respectively connected with the multifunctional MMIC chip and the channel LNA chip, and the functions of the transmitting power supply modulation chip comprise providing the negative reference voltage and the grid voltage of the power amplifier chip, improving the driving capability of transmitting power supply modulation signals, controlling the working voltage of the power amplifier chip, providing the working voltage of the power amplifier chip and controlling the grid voltage of the transmitting power supply modulation chip; the function of the receiving power supply modulation chip is to provide the working voltage of the multifunctional MMIC chip and the drain voltage of the channel low-noise amplifier chip;
each T/R channel is also provided with a wave control chip, the wave control chip and the multifunctional MMIC chip are integrated on the same HTCC multilayer circuit substrate, the wave control chip of the first channel, the wave control chip of the second channel, the wave control chip of the third channel and the wave control chip of the fourth channel are sequentially connected, the input end of the wave control chip of the first channel is connected with the radio frequency main port connector, the output ends of the wave control chip of the first channel, the wave control chip of the second channel, the wave control chip of the third channel and the wave control chip of the fourth channel are connected with the multifunctional MMIC chip, the transmitting power supply modulation chip and the receiving power supply modulation chip, the output end of the wave control chip of the fourth channel is also connected with the radio frequency main port connector, the control signals comprise radio frequency control signals and power supply control signals, the power supply input connector is an airtight micro rectangular low-frequency connector so as to ensure microminiaturization of the assembly, the wave control chip has the functions of converting data input in series into parallel data, configuring the working states of the multifunctional MMIC chip to transmit, receive, attenuate and phase-shift, the working states of the MMIC chip are realized by the multifunctional MMIC chip, the transmitting and the multifunctional MMIC chip, the transmitting power supply modulation chip, the power supply modulation chip is also amplified by the multifunctional chip, the power amplifier chip is controlled by the amplifying and the power supply chip;
each T/R channel is also provided with a circulator isolator chip and a channel radio frequency connector which are mutually connected, the circulator isolator chip and the multifunctional MMIC chip are integrated on the same HTCC multilayer circuit substrate, the input end of the circulator isolator chip is connected with the power amplifier chip, the output end of the circulator isolator chip is connected with the limiter chip, the channel radio frequency connector is connected with an antenna, the function of the circulator isolator chip is to complete microwave isolation of a transmitting channel and a receiving channel and isolate reflected signals from the antenna during transmitting operation, and the function of the channel radio frequency connector is used for radio frequency signal transmission between the antenna and the T/R channel.
The technical problems of the invention are solved by the following further technical proposal.
The T/R channel connector is an SMP radio frequency connector, the input end of the SMP radio frequency connector is connected with a radio frequency signal source, the output end of the SMP radio frequency connector is connected with the power division network, and the T/R channel connector is used for transmitting radio frequency signals between the radio frequency signal source and the T/R channel.
The radio frequency main port connector is a 15-core airtight micro-rectangular electric connector, the input end of the 15-core airtight micro-rectangular electric connector is connected with a beam controller for providing control signals, a power supply and the output end of a wave control chip of a channel IV, the power supply provides working voltage and current for each chip in the T/R channel, the output end of the 15-core airtight micro-rectangular electric connector is respectively connected with the wave control chip, a transmitting power supply modulation chip and a receiving power supply modulation chip, and the radio frequency main port connector has the function of providing control signals and power supply for the T/R channel.
The radio frequency control signals sequentially enter a first wave control chip of a channel, a second wave control chip of the channel, a third wave control chip of the channel and a fourth wave control chip of the channel, and finally are output to the radio frequency main port connector through the fourth wave control chip of the channel; the power control signals respectively enter the transmitting power modulation chip and the receiving power modulation chip of the first channel, the transmitting power modulation chip and the receiving power modulation chip of the second channel, the transmitting power modulation chip and the receiving power modulation chip of the third channel, and the transmitting power modulation chip and the receiving power modulation chip of the fourth channel.
The HTCC multilayer circuit substrate is at least 8-layer HTCC multilayer circuit substrate.
Preferably, the HTCC multilayer circuit substrate is an 18-layer HTCC multilayer circuit substrate.
The HTCC multilayer circuit substrate is formed by sintering 92-96% of alumina ceramic with 4-8% of sintering additive at 1500-1700 ℃, the dielectric constant is 7.2-9.8, the thickness of each layer of green material is 0.025-0.100 mm, and the tangent value of the loss angle is 0.007-0.008.
The control signal and the power supply are integrated from the surface layer of the HTCC multilayer circuit substrate of 18 layers to the surface of the 9 th layer, and the radio frequency signal, the control signal and the power supply are integrated from the surface of the 10 th layer to the surface of the 18 th layer, wherein the surface of the 9 th layer and the back of the 18 th layer are large-area grounding layers. The microwave transmission line is shielded by a large-area grounding layer and a metal column, so that good isolation among radio frequency signals, control signals and a power supply can be ensured, and the radio frequency signals, the control signals and the power supply are not interfered with each other; the microwave transmission lines are arranged in multiple layers, so that the integration level of the microwave T/R assembly can be remarkably improved, and the weight of the microwave T/R assembly is remarkably reduced.
The power amplifier chip is a model BW255 power amplifier chip manufactured by thirteenth research institute of China electronics and technology group.
The limiter chip is a limiter chip with the model BW1599 manufactured by thirteenth research institute of China electronics and technology group.
The channel low noise amplifier chip is a low noise amplifier chip with the model BW296 manufactured by thirteenth research institute of China electronics and technology group.
The wave control chip is a wave control chip with the model of JCNS1366 manufactured by fifty-eighth research institute of China electronic technology group company.
The transmitting power supply modulation chip comprises a transmitting power supply modulation chip for providing negative reference voltage and grid voltage of the power amplifier chip, a transmitting power supply modulation chip for improving driving capability of transmitting power supply modulation signals, a transmitting power supply modulation chip for controlling working voltage of the power amplifier chip, and a transmitting power supply modulation chip for providing working voltage of the power amplifier chip and controlling grid voltage of the transmitting power supply modulation chip for controlling working voltage of the power amplifier chip.
The transmitting power supply modulation chip for providing the negative reference voltage and the grid voltage of the power amplifier chip is a silicon-based Metal-Oxide-Semiconductor (MOS) power supply modulation chip with the model JS2318 manufactured by the fifty-eighth research institute of China electronic technology group.
The transmitting power supply modulation chip for improving the driving capability of the transmitting power supply modulation signal is a silicon-based MOS power supply modulation chip with the model of JS1111 manufactured by fifty-eighth research institute of China electronic technology group.
The transmitting power supply modulation chip for controlling the working voltage of the power amplifier chip is a silicon-based MOS switch tube chip with the model JS806, which is manufactured by fifty-eighth research institute of China electronic technology group.
The transmitting power supply modulation chip for providing the working voltage of the power amplifier chip and controlling the grid voltage of the transmitting power supply modulation chip for controlling the working voltage of the power amplifier chip is a silicon-based MOS power supply modulation chip with the model JS3490 manufactured by fifty-eighth research institute of China electronic technology group.
The receiving power supply modulation chip is a silicon-based MOS power supply modulation chip with the model JS1804 manufactured by fifty-eighth research institute of China electronic technology group.
The technical problems of the invention are solved by the following further technical proposal.
The cover plate and the shell are encapsulated by adopting aluminum-silicon materials, so that the weight of the microwave T/R component is reduced by 20%.
The microwave T/R component is a Ku wave band T/R component, and the Ku wave band is a radio wave band with the frequency of 14 GHz-18 GHz which accords with the IEEE 521-2002 standard.
Compared with the prior art, the invention has the beneficial effects that:
the invention has the characteristics of compact structure, small volume, high wiring density, low material cost, high mechanical strength, stable chemical property, corrosion resistance and high temperature resistance, multiple channels, high performance, high reliability, high integration level, light weight, low power consumption and good heat dissipation, the output power of the transmitted pulse is more than or equal to 20W, the receiving noise coefficient is less than or equal to 3.5dB, the phase shifting precision is less than or equal to 3.5 degrees (root mean square value RMS), and the attenuation precision is less than or equal to 1dB (root mean square value RMS). Compared with the existing microwave T/R component under the same function and index conditions, the volume and weight are reduced by more than 30 percent. The method can be widely applied to the fields of airborne phased array radars, carrier-borne phased array radars and satellite-borne phased array radars and communication.
Drawings
FIG. 1 is a diagram of a radio frequency link according to an embodiment of the present invention;
FIG. 2 is a block diagram of the multi-functional MMIC chip component of FIG. 1;
fig. 3 is a layout of the components of fig. 1 on an HTCC multilayer circuit substrate.
Detailed Description
The invention will now be described with reference to the following detailed description and with reference to the accompanying drawings.
The Ku-band four-channel microwave T/R module with the frequency of 14GHz to 18GHz as shown in fig. 1 to 3 is a common cavity structure combining four independent T/R channels into one, the common cavity structure comprises a cover plate, a shell, a T/R channel connector and a radio frequency main port connector which are respectively fixed with the shell through welding, a power division network respectively connected with the four independent T/R channels, and a multi-functional MMIC chip 101 with the model of BWM499, which is interconnected by a multi-chip module MCM, of each T/R channel, wherein the BWM499 chip is integrated with a six-bit phase shifter, a six-bit attenuator, a switch and a driving amplifier which are shared by transmission and reception, and a signal controller on the same HTCC multi-layer circuit substrate, and the four independent T/R channels respectively provide independent amplitude and phase control and respectively comprise a microwave device shared by transmission and reception.
Each T/R channel is provided with a power amplifier chip 106 with a model BW255, the bwm255 chip and the BWM499 chip are integrated on the same HTCC multilayer circuit substrate, an input terminal of the BWM 255 chip is connected to the BWM499 chip, and the function of the BWM 255 chip is to perform high-efficiency power saturation amplification on the emitted microwave signal.
Each T/R channel is further provided with a limiter chip 108 with a model BW1599 and a channel LNA chip 107 with a model BW296, which are sequentially connected, the BWM 1599 chip and the BWM 296 chip are respectively integrated on the same HTCC multi-layer circuit substrate with the BWM499 chip, the function of the BWM 1599 chip is to prevent the BWM499 chip from being burned when the received high-power microwave signal is input, the output end of the BWM 296 chip is connected with the BWM499 chip, and the function of the BWM 296 chip is to amplify the received microwave signal with low noise.
Each T/R channel is provided with a wave control chip 102 with the model of JCNS1366, the JCNS1366 chip and the BWM499 chip are integrated on the same HTCC multilayer circuit substrate, the wave control chip of the channel I, the wave control chip of the channel II, the wave control chip of the channel III and the wave control chip of the channel IV are sequentially connected, the input end of the wave control chip of the channel I is connected with a radio frequency main port connector, the wave control chip of the channel I, the wave control chip of the channel II, the wave control chip of the channel III and the output end of the wave control chip of the channel IV are connected with a multifunctional MMIC chip, a transmitting power modulation chip and a receiving power modulation chip, the output end of the wave control chip of the channel IV is also connected with a radio frequency main port connector, the input end of the JCNS1366 chip is connected with the BWM499 chip, the control signal comprises a radio frequency control signal and a power control signal, and the power input connector is an airtight micro rectangular low-frequency connector so as to ensure the miniaturization of the assembly. The JCNS1366 chip has the functions of converting serially input data into parallel data, configuring the working states of the multi-functional MMIC chip for transmitting, receiving, attenuating and phase shifting, realizing the control of the transmitting, receiving, attenuating, phase shifting and amplifying of radio frequency signals by the multi-functional MMIC chip, and further controlling the amplifying working state of the multi-functional MMIC chip, the working state of the power amplifier chip and the working state of the channel LNA chip by configuring the transmitting power supply modulation chip and the receiving power supply modulation chip.
Each T/R channel is further provided with an emission power modulation chip 103, an emission power modulation chip 104, an emission power modulation chip 105, an emission power modulation chip 110 and a receiving power modulation chip 111, the emission power modulation chip 103, the emission power modulation chip 104, the emission power modulation chip 105, the emission power modulation chip 110 and the receiving power modulation chip 111 are respectively integrated with the BWM499 chip on the same HTCC multilayer circuit substrate, the emission power modulation chip 103, the emission power modulation chip 104, the emission power modulation chip 105, the input end of the emission power modulation chip 110 and the input end of the receiving power modulation chip 111 are respectively connected with a radio frequency interface connector, the output end of the emission power modulation chip 103, the emission power modulation chip 104, the emission power modulation chip 105, the emission power modulation chip 110 and the 255 chip are connected, the output end of the receiving power modulation chip 111 is respectively connected with the BWM499 chip and the BW296 chip, the functions of the emission power modulation chip 103, the emission power modulation chip 104, the emission power modulation chip 105 and the emission power modulation chip 110 comprise providing negative reference voltage and gate voltage of the BW255 chip, improving the emission power modulation signal capacity, controlling the voltage of the emission power modulation chip, and the work voltage of the BW255 and the work voltage of the BW chip 255; the function of the receiving power modulation chip 111 is to provide the operating voltage of the BWM499 chip and the drain voltage of the BW296 chip.
The transmitting power modulating chip for providing the negative reference voltage and the gate voltage of the BW255 chip is a silicon-based MOS transmitting power modulating chip 103 with the model of JS 2318; the transmitting power modulation chip for improving the driving capability of the transmitting power modulation signal is a silicon-based MOS transmitting power modulation chip 104 with the model of JS 1111; the transmitting power supply modulation chip for controlling the working voltage of the BW255 chip is a silicon-based MOS transmitting power supply modulator chip 105 with the model number JS 806; the transmitting power modulating chip for providing the working voltage of the BW255 chip and the gate voltage of the JS806 chip is a silicon-based MOS transmitting power modulating chip 110 with the model of JS 3490; the reception power modulation chip is a silicon-based MOS reception power modulation chip 111 of model JS 1804.
Each T/R channel is further provided with a circulator isolator chip 109, a channel radio frequency connector, and a WGH9068E chip, wherein the type of the circulator isolator chip 109 is a WGH9068E, the channel radio frequency connector is connected with each other, the WGH9068E chip and the BWM499 chip are integrated on the same HTCC multilayer circuit substrate, the input end of the WGH9068E chip is connected with the BW255 chip, the output end of the WGH9068E chip is connected with the BW1599 chip, the channel radio frequency connector is connected with an antenna, the function of the WGH9068E chip is to complete microwave isolation of a transmitting channel and a receiving channel, and meanwhile isolate reflected signals from the antenna during transmitting operation, and the function of the channel radio frequency connector is used for radio frequency signal transmission between the antenna and the T/R channel.
The T/R channel connector is an SMP radio frequency connector, the input end of the SMP radio frequency connector is connected with a radio frequency signal source, the output end of the SMP radio frequency connector is connected with a power division network, and the T/R channel connector is used for transmitting radio frequency signals between the radio frequency signal source and the T/R channel.
The radio frequency main port connector is a 15-core airtight micro-rectangular electric connector, the input end of the 15-core airtight micro-rectangular electric connector is connected with the output ends of a beam controller, a power supply and a wave control chip for providing control signals, the power supply provides working voltage and current for each chip in a T/R channel, the output end of the 15-core airtight micro-rectangular electric connector is respectively connected with a JCNS1366 chip, a JS2318 chip, a JS1111 chip, a JS806 chip, a JS3490 chip and a JS1804 chip, and the radio frequency main port connector has the function of providing control signals and power supply for the T/R channel.
The radio frequency control signals sequentially enter the wave control chip 102 of the first channel, the wave control chip of the second channel, the wave control chip of the third channel and the wave control chip of the fourth channel, and finally are output to the 15-core airtight SSMA connector through the wave control chip of the fourth channel; the power control signals respectively enter the transmitting power modulation chip 103, the transmitting power modulation chip 104, the transmitting power modulation chip 105, the transmitting power modulation chip 110, the receiving power modulation chip 111, the transmitting power modulation chip and the receiving power modulation chip of the second channel, the transmitting power modulation chip and the receiving power modulation chip of the third channel, and the transmitting power modulation chip and the receiving power modulation chip of the fourth channel.
The HTCC multilayer circuit substrate is an 18-layer HTCC multilayer circuit substrate, is formed by sintering 92-96% of alumina ceramic and 4-8% of sintering aid at the temperature of 1500-1700 ℃, has a dielectric constant of 7.2-9.8, has a thickness of 0.025-0.100 mm of each layer of green material, and has a loss tangent of 0.007-0.008.
The control signal and the power supply are integrated from the surface layer of the HTCC multilayer circuit substrate of 18 layers to the surface of the 9 th layer, and the radio frequency signal, the control signal and the power supply are integrated from the surface of the 10 th layer to the surface of the 18 th layer, wherein the surface of the 9 th layer and the back surface of the 18 th layer are large-area grounding layers. The microwave transmission line is shielded by a large-area grounding layer and a metal column, so that good isolation among radio frequency signals, control signals and a power supply can be ensured, and the radio frequency signals, the control signals and the power supply are not interfered with each other; the microwave transmission lines are arranged in multiple layers, so that the integration level of the microwave T/R assembly can be remarkably improved, and the weight of the microwave T/R assembly is remarkably reduced.
The components of the 18-layer HTCC multilayer circuit substrate layout in fig. 3 are as follows:
a region I integrates a multifunctional MMIC chip 101 and a wave control chip 102 of each T/R channel;
region two integrates the transmit power modulation chip 103, the transmit power modulation chip 104, the transmit power modulation chip 105, the transmit power modulation chip 110, and the receive power modulation chip 111 for each T/R channel;
region three integrates the power amplifier chip 106, the channel LNA chip 107, the limiter chip 108, and the circulator isolator 109 for each T/R channel.
The cover plate and the shell are encapsulated by adopting aluminum-silicon materials, so that the weight of the microwave T/R assembly is reduced by 20 percent.
The working process of the radio frequency signal in the specific embodiment is as follows:
when in a transmitting state, a radio frequency signal from a radio frequency signal source enters a power division network through an SMP radio frequency connector, is distributed into four parts which respectively enter a multifunctional MMIC chip 101 of a first channel, a multifunctional MMIC chip of a second channel, a multifunctional MMIC chip of a third channel and a multifunctional MMIC chip of a fourth channel, the multifunctional MMIC chip 101 carries out attenuation, phase shifting and amplification processing on the radio frequency signal, then outputs the radio frequency signal into a power amplifier chip 106, and the power amplifier chip 106 carries out power amplification on the radio frequency signal, then outputs the radio frequency signal into a circulator isolator chip 109, and then enters an antenna through the channel radio frequency connector, and the antenna emits the radio frequency signal outwards.
When in a receiving state, radio frequency signals enter a channel radio frequency connector through an antenna, then enter a limiter chip 108 through a circulator isolator chip 109, then enter a channel LNA chip 107 to amplify the received radio frequency signals with low noise and enter a multifunctional MMIC chip 101, the multifunctional MMIC chip 101 attenuates, phase shifts and amplifies the radio frequency signals and outputs the radio frequency signals into a power division network, and the power division network combines the radio frequency signals of a channel I, a channel II, a channel III and a channel IV and outputs the radio frequency signals through an SMP radio frequency connector.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. Several equivalent substitutions or obvious modifications will occur to those skilled in the art to which this invention pertains without departing from the spirit of the invention, and the same should be considered to be within the scope of this invention as defined in the appended claims.
Claims (10)
1. The utility model provides a Ku wave band four-channel microwave T/R subassembly, is the common cavity structure of four independent T/R passageway unifications that constitute the same, common cavity structure includes apron, casing and through welding respectively with the fixed T/R passageway connector of casing, radio frequency total mouth connector, still include the power division network that is connected respectively with four independent T/R passageway, and the multi-functional monolithic microwave integrated circuit MMIC chip of each T/R passageway by multi-chip module MCM interconnect, multi-functional MMIC chip has six bit shifter, six bit attenuator, switch and the drive amplifier of sending and receiving sharing on same high temperature cofiring ceramic HTCC multilayer circuit substrate, and signal controller, four independent T/R passageway provide independent range and phase control respectively, include respectively and send and receive sharing microwave device, its characterized in that:
the multifunctional MMIC chip is a multifunctional MMIC chip with the model number of BWM 499;
each T/R channel is provided with a power amplifier chip, the power amplifier chip and the multifunctional MMIC chip are integrated on the same HTCC multilayer circuit substrate, and the input end of the power amplifier chip is connected with the multifunctional MMIC chip;
each T/R channel is also provided with a limiter chip and a channel Low Noise Amplifier (LNA) chip which are connected in sequence, the limiter chip and the channel LNA chip are respectively integrated with the multifunctional MMIC chip on the same HTCC multilayer circuit substrate, and the output end of the channel LNA chip is connected with the multifunctional MMIC chip;
each T/R channel is also provided with a transmitting power supply modulation chip and a receiving power supply modulation chip, the transmitting power supply modulation chip and the receiving power supply modulation chip are respectively integrated with the multifunctional MMIC chip on the same HTCC multilayer circuit substrate, the input end of the transmitting power supply modulation chip and the input end of the receiving power supply modulation chip are respectively connected with the radio frequency main port connector, the output end of the transmitting power supply modulation chip is connected with the power amplifier chip, the output end of the receiving power supply modulation chip is respectively connected with the multifunctional MMIC chip and the channel LNA chip, and the functions of the transmitting power supply modulation chip comprise providing the negative reference voltage and the grid voltage of the power amplifier chip, improving the driving capability of transmitting power supply modulation signals, controlling the working voltage of the power amplifier chip, providing the working voltage of the power amplifier chip and controlling the grid voltage of the transmitting power supply modulation chip; the function of the receiving power supply modulation chip is to provide the working voltage of the multifunctional MMIC chip and the drain voltage of the channel low-noise amplifier chip;
each T/R channel is further provided with a wave control chip, the wave control chip and the multifunctional MMIC chip are integrated on the same HTCC multilayer circuit substrate, the wave control chip of the first channel, the wave control chip of the second channel, the wave control chip of the third channel and the wave control chip of the fourth channel are sequentially connected, the input end of the wave control chip of the first channel is connected with the radio frequency main port connector, the output ends of the wave control chip of the first channel, the wave control chip of the second channel, the wave control chip of the third channel and the wave control chip of the fourth channel are connected with the multifunctional MMIC chip, the transmitting power supply modulation chip and the receiving power supply modulation chip, the output end of the wave control chip of the fourth channel is also connected with the radio frequency main port connector, the control signals comprise radio frequency control signals and power supply control signals, and the power supply input connector is an airtight micro rectangular low-frequency connector;
each T/R channel is further provided with a circulator isolator chip and a channel radio frequency connector which are connected with each other, the circulator isolator chip and the multifunctional MMIC chip are integrated on the same HTCC multilayer circuit substrate, the input end of the circulator isolator chip is connected with the power amplifier chip, the output end of the circulator isolator chip is connected with the limiter chip, and the channel radio frequency connector is connected with an antenna.
2. The Ku-band four-channel microwave T/R assembly of claim 1, wherein:
the T/R channel connector is an SMP radio frequency connector, the input end of the SMP radio frequency connector is connected with a radio frequency signal source, and the output end of the SMP radio frequency connector is connected with the power division network;
the radio frequency main port connector is a 15-core airtight micro-rectangular electric connector, the input end of the 15-core airtight micro-rectangular electric connector is connected with the output ends of the wave control chip for providing control signals, the wave controller and the power supply and the channel four, and the output end of the 15-core airtight micro-rectangular electric connector is respectively connected with the wave control chip, the transmitting power supply modulation chip and the receiving power supply modulation chip.
3. The Ku-band four-channel microwave T/R assembly of claim 1, wherein:
the radio frequency control signals sequentially enter a first wave control chip of a channel, a second wave control chip of the channel, a third wave control chip of the channel and a fourth wave control chip of the channel, and finally are output to the radio frequency main port connector through the fourth wave control chip of the channel; the power control signals respectively enter the transmitting power modulation chip and the receiving power modulation chip of the first channel, the transmitting power modulation chip and the receiving power modulation chip of the second channel, the transmitting power modulation chip and the receiving power modulation chip of the third channel, and the transmitting power modulation chip and the receiving power modulation chip of the fourth channel.
4. The Ku-band four-channel microwave T/R assembly of claim 3, wherein:
the HTCC multilayer circuit substrate is at least 8-layer HTCC multilayer circuit substrate.
5. The Ku-band four-channel microwave T/R assembly of claim 3, wherein:
the HTCC multilayer circuit substrate is an 18-layer HTCC multilayer circuit substrate;
the control signal and the power supply are integrated from the surface layer of the HTCC multilayer circuit substrate of 18 layers to the surface of the 9 th layer, and the radio frequency signal, the control signal and the power supply are integrated from the surface of the 10 th layer to the surface of the 18 th layer, wherein the surface of the 9 th layer and the back of the 18 th layer are large-area grounding layers.
6. The Ku-band four-channel microwave T/R assembly of claim 1, wherein:
the power amplifier chip is a power amplifier chip with the model BW 255;
the limiter chip is a limiter chip with the model BW 1599;
the channel low noise amplifier chip is a low noise amplifier chip with the model BW 296;
the wave control chip is a wave control chip with the model of JCNS 1366.
7. The Ku-band four-channel microwave T/R assembly of claim 1, wherein:
the transmitting power supply modulation chip comprises a transmitting power supply modulation chip for providing negative reference voltage and grid voltage of the power amplifier chip, a transmitting power supply modulation chip for improving driving capability of transmitting power supply modulation signals, a transmitting power supply modulation chip for controlling working voltage of the power amplifier chip, and a transmitting power supply modulation chip for providing working voltage of the power amplifier chip and controlling grid voltage of the transmitting power supply modulation chip for controlling working voltage of the power amplifier chip.
8. The Ku-band four-channel microwave T/R assembly of claim 1, wherein:
the transmitting power supply modulation chip for providing the negative reference voltage and the grid voltage of the power amplifier chip is a silicon-based MOS power supply modulation chip with the model of JS 2318;
the transmitting power supply modulation chip for improving the driving capability of the transmitting power supply modulation signal is a silicon-based MOS power supply modulation chip with the model of JS 1111;
the transmitting power supply modulation chip for controlling the working voltage of the power amplifier chip is a silicon-based MOS power supply modulation chip with the model of JS 806;
the transmitting power supply modulation chip for providing the working voltage of the power amplifier chip and controlling the grid voltage of the transmitting power supply modulation chip for controlling the working voltage of the power amplifier chip is a silicon-based MOS power supply modulation chip with the model of JS 3490;
the receiving power supply modulation chip is a silicon-based MOS power supply modulation chip with the model of JS 1804.
9. The Ku-band four-channel microwave T/R assembly of claim 1, wherein:
the cover plate and the shell are encapsulated by adopting an aluminum-silicon material.
10. The Ku-band four-channel microwave T/R assembly of claim 1, wherein:
the Ku wave band is a radio wave band with frequencies of 14 GHz-18 GHz which accords with the IEEE 521-2002 standard.
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| CN110927677B (en) * | 2019-11-28 | 2021-06-18 | 航天南湖电子信息技术股份有限公司 | Broadband low-power-consumption four-in-one receiver |
| CN111044976B (en) * | 2019-12-24 | 2022-04-12 | 南京吉凯微波技术有限公司 | Phased array radar active sub-array system based on high integration level and high reliability |
| CN111679250A (en) * | 2020-06-05 | 2020-09-18 | 西安电子科技大学 | Small frequency agility MIMO radar device based on radio frequency transceiver |
| CN112114290A (en) * | 2020-09-25 | 2020-12-22 | 中国电子科技集团公司第四十三研究所 | Miniaturized four passageway TR subassemblies in X wave band |
| CN113098551B (en) * | 2021-04-27 | 2022-01-04 | 电子科技大学 | HTCC three-dimensional receiving and transmitting assembly |
| CN114597627B (en) * | 2022-02-21 | 2023-03-21 | 北京遥感设备研究所 | High-power-density integrated active phased-array antenna micro-system |
| CN116500549B (en) * | 2023-06-28 | 2023-11-07 | 南京邮电大学 | LTCC-based four-channel X-band three-dimensional stacking structure TR assembly |
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