CN111103569B - Star-loaded active phased array four-channel microwave TR assembly capable of self-heating - Google Patents
Star-loaded active phased array four-channel microwave TR assembly capable of self-heating Download PDFInfo
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- CN111103569B CN111103569B CN201911313349.XA CN201911313349A CN111103569B CN 111103569 B CN111103569 B CN 111103569B CN 201911313349 A CN201911313349 A CN 201911313349A CN 111103569 B CN111103569 B CN 111103569B
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- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
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Abstract
The invention discloses a self-heating star-loaded active phased array four-channel microwave TR component, when a power amplifier chip is in a load state, a subarray system control circuit controls the self-heating control chip to increase the load state grid voltage provided by an external power supply for the power amplifier chip, so as to further improve the load state drain electrode static current for the power amplifier chip, and the subarray system control circuit controls the drain electrode voltage modulated by a transmitting power supply modulation chip to generate load state power which is all load state heat consumption, so that the power amplifier chip generates heat; the self-heating control chip is adopted, so that the power amplifier chip generates heat when in a load state, and the load state grid voltage of the power amplifier chip is increased to further improve the load state drain quiescent current so as to generate heat, thereby overcoming the extremely low temperature of space environment, ensuring that the internal devices of the radar are kept in a safe working temperature range, and reducing the workload and design difficulty of a thermal control system.
Description
Technical Field
The invention relates to the field of active phased array radars, in particular to a star-loaded active phased array four-channel microwave TR assembly capable of self-heating.
Background
The satellite-borne radar is a radar which takes satellites as a detection platform, can withstand the influence of climate and combat environment, can continuously perform omnibearing real-time reconnaissance on land, sea, air and sky targets, and has important roles in climate monitoring, national strategic defense and the like; because the active phased array radar system can meet the requirements of the spaceborne radar on the beam width and the beam direction, the spaceborne phased array radar becomes the main trend of the current development of the spaceborne radar.
The microwave T/R or TR (Transmitter and Receiver ) component is one of the most important components of the active phased array radar system, one end of the microwave T/R or TR component is connected with an antenna, and the other end of the microwave T/R or TR component is connected with an intermediate frequency processing unit, so that a wireless transmitting and receiving system is formed, the functions of amplifying, phase shifting and attenuating signals are achieved, and the performance of the microwave T/R or TR component directly influences the detection effect of the whole active phased array radar system.
Due to the specificity and severe environmental conditions of the space environment where the spaceborne radar is located, single event upset effect, latch-up effect, total dose effect, micro discharge effect and other effects can be induced under space radiation, and damage, performance degradation and even failure of radar electronic components can be caused; in a vacuum environment, when the power, the frequency and the gap size of the internal structure of the microwave TR component in a high-power state meet a certain relation, a micro-discharge effect can occur, so that the microwave transmission standing-wave ratio is increased, the reflected power is increased, the system noise is increased and the like, and the performance of the microwave TR component is reduced or even damaged; and after the parts of the spaceborne radar are damaged, the repair cannot be carried out.
The so-called single event upset effect (SEU) is caused by high energy single particle ionization, and the energy lost when the radiation particles pass through the device can be linearly transferred to the device material to form hole electron pairs, so that the level of a certain node in the circuit is changed to cause the temporary change of the bistable device state; the latch-up is a phenomenon that a silicon controlled structure inherent in a CMOS (Complementary Metal-Oxide-Semiconductor) device is triggered to be conducted, and a low-resistance high-current is formed between a power supply and the ground, and the latch-up mainly occurs in the CMOS device; the total dose effect refers to the total absorption energy level which can be born by the device before the characteristics (current, voltage threshold value and switching time) of the electronic device are changed greatly, and the device cannot work normally after the total absorption energy level is exceeded; the so-called micro discharge effect is a discharge phenomenon that involves a strong discharge inside a microwave component in a strong vacuum and a breakdown, and is often generated in a high-power device.
Therefore, the space-borne microwave TR assembly is required to have the characteristics of long service life, high reliability, small volume, light weight and the like, so that strict requirements on thermal design, radiation resistance, micro-discharge resistance, space environment adaptability, reliability design and the like of the microwave TR assembly are met, and a series of key technical problems must be solved.
Disclosure of Invention
In order to solve the technical problems, the invention provides the satellite-borne active phased array four-channel microwave TR component capable of self-heating, which can adapt to the rapid change of extremely high and extremely low temperature of space environment and reduce the workload and the design difficulty of a thermal control system.
The technical scheme of the invention is as follows: a self-heatable star-loaded active phased array four-channel microwave TR assembly comprising: the subarray system control circuit, a power amplifier chip, a self-heating control chip and a transmitting power supply modulation chip are arranged in each TR channel; wherein, the liquid crystal display device comprises a liquid crystal display device,
when the power amplifier chip is in an emission state, the subarray system control circuit controls the self-heating control chip to provide an emission state grid voltage required by work from an external power supply so as to regulate the power amplifier chip to generate an emission state drain electrode quiescent current, the emission state drain electrode quiescent current is increased to be working current when a microwave signal is input into the power amplifier chip, and the working current and the drain electrode voltage modulated by the emission power supply modulation chip are controlled by the subarray system control circuit to generate emission state power, one part of the emission state power is the microwave power to output an emission signal, and the other part of the emission state power is emission state heat consumption so that the power amplifier chip generates heat;
when the power amplifier chip is in a load state, the subarray system control circuit controls the self-heating control chip to increase the load state grid voltage provided by an external power supply for the power amplifier chip, so that the load state drain quiescent current for the power amplifier chip is improved, and the load state power which is totally the load state heat consumption is generated by controlling the drain voltage modulated by the transmitting power supply modulation chip through the subarray system control circuit, so that the power amplifier chip generates heat.
The star-loaded active phased array four-channel microwave TR component capable of self-heating, wherein: the drain voltage of the power amplifier chip is set to be a fixed value and always keeps an on state; the self-heating control chip is arranged as an adjustable grid voltage power supply modulation chip.
The star-loaded active phased array four-channel microwave TR component capable of self-heating, wherein: the multi-functional digital signal processing system also comprises an SMP radio frequency connector, a 1:4 power divider, a multifunctional MMIC chip, a limiting low noise amplifier chip, a circulator isolator, a directional coupler, a four-in-one synthesizer, a detection circuit, a channel radio frequency connector and an antenna; wherein, the liquid crystal display device comprises a liquid crystal display device,
in a transmitting state, a radio frequency signal enters a 1:4 power divider through an SMP radio frequency connector and is divided into four parts, the four parts enter a multifunctional MMIC chip in each channel respectively to be subjected to attenuation, phase shifting and amplification, then the four parts are output to a corresponding circulator isolator after being subjected to saturated amplification through a power amplifier chip in each channel, then a small part of the radio frequency signal which is not more than one fourth is extracted through a directional coupler in each channel, the small part of the radio frequency signal in the four channels is synthesized through a four-in-one synthesizer and is output to a monitoring network of a subarray system through a detection circuit, and most of the radio frequency signal in the four channels is output to an antenna through the channel radio frequency connector and is transmitted outwards through the antenna;
in a receiving state, radio frequency signals received by the antenna enter respective channels through corresponding channel radio frequency connectors, enter limiting low-noise amplifier chips through directional couplers and circulator isolators in the respective channels in sequence to carry out low-noise amplification, then carry out attenuation, phase shifting and amplification treatment through multifunctional MMIC chips in the respective channels, and then combine the radio frequency signals in the four channels through 1:4 power splitters and output through SMP radio frequency connectors.
The star-loaded active phased array four-channel microwave TR component capable of self-heating, wherein: the four identical and independent TR channels are combined to form a common cavity structure, and the common cavity structure comprises a cover plate, a surrounding frame, a bottom plate, a TR channel connector and a radio frequency main port connector which are respectively fixed with the surrounding frame through welding; the surrounding frame and the bottom plate are welded by laser to form a cavity structure of the microwave TR assembly; and the cover plate, the surrounding frame and the bottom plate are welded through laser seal welding, so that the outer shell of the microwave TR assembly is assembled.
The star-loaded active phased array four-channel microwave TR component capable of self-heating, wherein: the cover plate and the surrounding frame are both made of titanium alloy TC4R materials; the bottom plate is made of aluminum-based silicon carbide materials.
The star-loaded active phased array four-channel microwave TR component capable of self-heating, wherein: the low-temperature co-fired ceramic LTCC multilayer circuit substrate welded on the bottom plate is further arranged in the common cavity structure, a sinking cavity is locally dug in the LTCC multilayer circuit substrate, and the inside of the LTCC multilayer circuit substrate is used for integrating a multifunctional MMIC chip and a wave control chip; the top of the sinking cavity of the LTCC multilayer circuit substrate is covered with tantalum leather for radiation resistance and reinforcement.
The star-loaded active phased array four-channel microwave TR component capable of self-heating, wherein: the inner surface of the outer shell of the microwave TR component is plated with gold, and the exposed outer surface adopts an aluminum shielding layer with the thickness of more than 3mm for radiation resistance; the microwave TR component is internally filled with inert gas before the cover plate is covered, so as to inhibit micro-discharge effect.
The star-loaded active phased array four-channel microwave TR component capable of self-heating, wherein: an indium sheet with the thickness of 0.1mm is paved below the bottom plate so as to strengthen heat dissipation.
The star-loaded active phased array four-channel microwave TR component capable of self-heating, wherein: the power amplifier chip is welded on a heat sink which is welded on the bottom plate of the outer shell.
The star-loaded active phased array four-channel microwave TR component capable of self-heating, wherein: the power amplifier chip and the heat sink are welded by adopting gold-tin eutectic welding; the heat sink is made of a molybdenum copper sheet with gold-plated surface.
According to the self-heating star-loaded active phased array four-channel microwave TR component provided by the invention, the self-heating control chip is adopted, so that the power amplifier chip generates heat when in a load state, and the load state grid voltage of the power amplifier chip is increased, so that the load state drain quiescent current is increased, and the heat is generated, so that the extremely low temperature of a space environment is overcome, the radar internal device is ensured to be kept in a safe working temperature range, and the workload and design difficulty of a thermal control system are reduced.
Drawings
FIG. 1 is a schematic plan view of an assembly layout of an embodiment of a star-loaded active phased array four-channel microwave TR assembly;
FIG. 2 is a cross-sectional view A-A of FIG. 1;
FIG. 3 is a cross-sectional view B-B of FIG. 1;
fig. 4 is a partial enlarged view at the power amplifier module 105 in fig. 2;
FIG. 5 is a link diagram of a self-heatable star-loaded active phased array four-way microwave TR assembly of the present invention;
FIG. 6 is a schematic diagram of self-heating of the self-heatable star-loaded active phased array four-channel microwave TR assembly of the present invention in the transmit state and in the load state, respectively;
the reference numbers in the figures are summarized: cover plate 101, enclosure 102, bottom plate 103, LTCC multilayer circuit substrate 104, sinking cavity 104a, power amplifier module 105, power amplifier chip (105 a in fig. 4 or 209 in fig. 5, 6), heat sink 105b, circulator isolator (106 in fig. 1, 2 or 211 in fig. 5), microstrip transmission line 107, directional coupler (108 in fig. 1, 2 or 212 in fig. 5), multi-functional MMIC chip (109 in fig. 1, 2, 3 or 205 in fig. 5), waveguide chip (110 in fig. 1, 2 or 204 in fig. 5), tantalum skin 111, aluminum shield 112, indium sheet 113; SMP radio frequency connector 201, 1:4 power splitters 202, 203, receive power modulation chip 206, self-heating control chip (207 in fig. 5 or 303 in fig. 6), transmit power modulation chip (208 in fig. 5 or 302 in fig. 6), limiting low noise amplifier chip 210, channel radio frequency connector 213, four-in-one synthesizer 214, detection circuit 215; sub-system control circuit 301, microwave signal 304, emitter-state gate voltage 305a, emitter-state gate voltage 305b, emitter-state drain quiescent current 306a, emitter-state drain quiescent current 306b, operating current 307, drain voltage 308, emitter-state power 309a, emitter-state power 309b, microwave power 310, emitter-state heat consumption 311a, and emitter-state heat consumption 311b.
Detailed Description
The following detailed description and examples of the invention are presented in conjunction with the drawings, and the described examples are intended to illustrate the invention and not to limit the invention to the specific embodiments.
As shown in fig. 1, fig. 1 is a schematic plan view of an assembly layout of an embodiment of a star-active phased array four-channel microwave TR assembly, and as shown in fig. 2 and 3, fig. 2 is a cross-sectional view A-A in fig. 1, and fig. 3 is a cross-sectional view B-B in fig. 1, where the microwave TR assembly is formed by combining four identical and independent TR channels into a common cavity structure, and the common cavity structure includes a cover plate 101, a surrounding frame 102, a bottom plate 103, and TR channel connectors (not shown) and a radio frequency total port connector (not shown) which are respectively fixed to the surrounding frame 102 by welding; firstly, the enclosure frame 102 and the bottom plate 103 are welded by laser to form a cavity structure of the microwave TR assembly; secondly, welding the cover plate 101 and the surrounding frame 102 and the bottom plate 103 through laser seal welding, and assembling an outer shell of the microwave TR assembly; the outer shell serves as a carrier, not only plays a role in bearing components and LTCC circuit substrate 104, but also plays roles in grounding, heat conduction (/ heat dissipation), sealing protection and the like; meanwhile, the outer shell also has the functions of isolation, shielding, anti-interference, radiation prevention and the like.
Preferably, the cover plate 101 and the enclosure frame 102 are made of titanium alloy TC4R material, and compared with other packaging shell materials, the titanium alloy TC4R material has small thermal expansion coefficient and low density, and is particularly suitable for the requirements of the packaging shell on weight and thermal expansion matching with an internal circuit substrate; meanwhile, the titanium alloy TC4R material has high strength up to 1400MPa, strong corrosion resistance and good plastic toughness, especially has very good low-temperature toughness, is very suitable for being applied to occasions requiring high reliability and severe use environments, and is an irreplaceable packaging shell material.
Preferably, the bottom plate 103 is made of aluminum-based silicon carbide material, and the aluminum-based silicon carbide has a low thermal expansion coefficient and is matched with the thermal expansion coefficient of the LTCC circuit substrate 104; and the aluminum-based silicon carbide material has high thermal conductivity and low density, and can meet the use requirements of thermal design of products in various wave bands.
Specifically, the thickness of the cover plate 101 is 1mm; the thin walls on the two sides of the surrounding frame 102 are 2mm, and the thick wall for installing the TR channel connector and the radio frequency main port connector is 5mm; the thickness of the bottom plate 103 is 2mm.
The low-temperature co-fired ceramic LTCC multilayer circuit substrate 104, the power amplifier module 105, the annular isolator 106, the microstrip transmission line 107 and the directional coupler 108 are also arranged in the common cavity structure; the LTCC multilayer circuit substrate 104 has a partially dug cavity 104a, and is internally used for integrating a multifunctional MMIC (Monolithic Microwave Integrated Circuit ) chip 109 and a waveguide chip 110; the multi-functional MMIC chip 109 can greatly reduce design difficulty, improve reliability, and reduce volume, weight and cost; the LTCC multilayer circuit substrate 104 has the characteristics of low dielectric constant, small loss tangent value, flat frequency response, good thickness consistency and the like, and can integrate resistance, capacitance and inductance into the LTCC multilayer substrate 104 in a buried mode, so that the packaging density of components is greatly improved.
Preferably, the tantalum skin 111 is capped on the top of the sinking cavity 104a of the LTCC multilayer circuit substrate 104 for radiation resistance and reinforcement; specifically, the thickness of the tantalum skin 111 is 0.5mm, and the tantalum skin is fixed by adopting a bi-component epoxy silver colloid, and the shearing force is not less than 50N.
Preferably, the inner surface of the outer casing of the microwave TR assembly is gold-plated, and the exposed outer surface, namely, the two sides of the cover plate 101 and the surrounding frame 102, are respectively provided with an aluminum shielding layer 112 with the thickness of more than 3mm for radiation resistance; preferably, the microwave TR assembly is internally filled with an inert gas, such as helium, before capping the cover plate 101 to suppress the micro-discharge effect.
Preferably, an indium sheet 113 with a thickness of 0.1mm is laid under the bottom plate 103, and the indium sheet 113 has good plasticity, so that a gap between the bottom plate 103 and a fixing plate (not shown) can be better filled and heat dissipation is further enhanced when the microwave TR assembly is installed.
The LTCC multilayer circuit substrate 104, the power amplifier module 105, the circulator isolator 106, the microstrip transmission line 107 and the directional coupler 108 are respectively welded on the bottom plate 103; a directional coupler 108 at the transmit output port of the microwave TR assembly, for coupling the transmit signal to the internal calibration network during the transmit state and for coupling the calibration signal from the internal calibration network to the receive channel of the microwave TR assembly during the receive state; and the directional coupler 108 provides the same transmit and receive amplitude for each channel required by the array correction and monitoring system, while detecting the transmit power and outputting the detected voltage signal.
As shown in connection with fig. 4, fig. 4 is a partial enlarged view at the power amplifier module 105 in fig. 2, the power amplifier module 105 including a power amplifier chip 105a, a clipping low noise amplifier chip (not shown), and a heat sink 105b; the power amplifier chip 105a is the device with the highest heat consumption generated in the whole microwave TR assembly; the heat dissipation design of the power amplifier chip 105a is important as the place where the heat is most generated in the whole microwave TR assembly, the power amplifier chip 105a is welded on the heat sink 105b, and the heat sink 105b is welded on the bottom plate 103 of the outer case.
Preferably, the power amplifier chip 105a and the heat sink 105b are welded by adopting gold-tin eutectic welding with high strength and good weldability, and the penetration rate is required to be more than 95%; preferably, the heat sink 105b is made of a molybdenum copper sheet with very good thermal conductivity, and meanwhile, the surface of the molybdenum copper sheet is plated with gold, the thickness of the gold plating layer is 1.8-2um, the roughness is not more than 0.8um, and the weldability is good.
As shown in fig. 5, fig. 5 is a link diagram of the self-heatable star-loaded active phased array four-channel microwave TR assembly according to the present invention, and the working process of the radio frequency signal in the transmitting state and the receiving state is as follows:
in the transmitting state, the rf signal enters the power division network (i.e. 1:4 power divider 202, the same applies hereinafter) through the SMP rf connector 201, is divided into four parts, and enters the multi-functional MMIC chip 205 (i.e. 109 in fig. 1, 2 and 3, the same applies hereinafter) in the respective channels to attenuate, phase shift and amplify the rf signal, and then enters the power amplifier chip 209 (i.e. 105a in fig. 4, the same applies hereinafter), the power amplifier chip 209 performs saturation amplification on the rf signal and then outputs the rf signal to the circulator isolator 211 (i.e. 106 in fig. 1 and 2, the same applies hereinafter) to isolate the reflected signal from the antenna, and then extracts a small part of the signal through the directional coupler 212 (i.e. 108 in fig. 1 and 2, the same applies hereinafter), for example, a signal not more than a quarter of the signal is defined as a small part of the signal to extract, and the rest of the signal is a large part of the signal; a small portion of the four-channel signals are output to the monitoring network of the sub-array system via the four-in-one synthesizer 214 and the detector circuit 215. Most of the signal is output by the channel rf connector 213 to the antenna and is transmitted out by the antenna.
When in a receiving state, radio frequency signals enter a channel radio frequency connector 213 through an antenna, then enter a limiting low-noise amplifier chip 210 through a directional coupler 212 and a circulator isolator 211 in sequence, the limiting low-noise amplifier chip 210 amplifies the received radio frequency signals through low noise and enters a multifunctional MMIC chip 205, the multifunctional MMIC chip 205 attenuates, phase shifts and amplifies the radio frequency signals and outputs the radio frequency signals to a power division network 202, and the power division network 202 combines the radio frequency signals of all channels and outputs the radio frequency signals through an SMP radio frequency connector 201.
As is well known, when the microwave TR assembly is in a transmitting state, larger heat consumption is generated, and the microwave TR assembly has a mode of a load state, namely, the microwave TR assembly is not transmitted and not received, and the receiving and transmitting are in an isolated state; when the microwave TR component is in a load state, the drain voltage of the power amplifier chip 209 is disconnected, and no heat is generated in the microwave TR component; however, because of the rapid change of extremely low temperature (-180- +200 ℃) of the space environment in which the spaceborne phased array radar is located, the spaceborne phased array radar should be provided with a complex thermal control system in order to ensure that the internal devices of the radar are kept in a safe working temperature range.
The self-heating system of the satellite-borne active phased array four-channel microwave TR component can keep the drain voltage of the power amplifier chip 209 on because no radio frequency signal is input when the microwave TR component is in a load state, and improves the grid voltage, and the self-heating system keeps a temperature by utilizing the power consumption of the power amplifier chip to generate heat, so that the workload and the design difficulty of a thermal control system are reduced; specifically, the self-heating system adopts the self-heating control chip 207, and increases the load-state gate voltage of the power amplifier chip 209 to further increase the load-state drain quiescent current so as to generate heat.
Referring to fig. 6, fig. 6 is a schematic diagram of self-heating of the self-heatable star-loaded active phased array four-channel microwave TR assembly according to the present invention in an emission state and in a loading state, respectively, and the self-heating process of the power amplifier chip 209 is as follows:
when the power amplifier chip 209 is in the emission state, the sub-array system control circuit 301 controls the self-heating control chip 303 to provide the emission state gate voltage 305a required for the operation with a smaller voltage from the external power supply, so as to regulate the power amplifier chip 209 to generate the emission state drain quiescent current 306a with a small current, the drain quiescent current 306a is increased to be a large current operation current 307 when the microwave signal 304 is input to the power amplifier chip 209, and the drain voltage 308 modulated by the emission power supply modulation chip 302 generates the emission state power 309a, and one part of the generated emission state power 309a is the microwave power 310 to output the emission signal, and the other part is the emission state heat consumption 311a to enable the power amplifier chip 209 to generate heat.
When the power amplifier chip 209 is in a load state, since no microwave signal 304 is input, the sub-array system control circuit 301 controls the self-heating control chip 303 (i.e. 207 in fig. 5, the same applies below) to change the load state gate voltage 305b provided by the external power supply to the power amplifier chip 209, so that the voltage of the load state gate voltage 305b is larger, further the load state drain quiescent current 306b of the power amplifier chip 209 is improved, and the load state power 309b is generated with the drain voltage 308 modulated by the transmitting power modulation chip 302, and the generated load state power 309b is all load state heat consumption 311b, so that the power amplifier chip 209 generates heat to overcome the extremely low temperature of the space environment, ensure that the radar internal devices are kept in a safe working temperature range, and reduce the workload and design difficulty of the heat control system.
Specifically, the sub-array system control circuit 301 outside the component belongs to the prior art, and the internal circuit structure is well known to those skilled in the art, and need not be described herein; the self-heating control chip 303 in the assembly is set as an adjustable grid voltage power supply modulation chip, and grid voltage adjustment is realized through a wave control circuit of an array surface sub-array system outside the assembly.
Preferably, the drain voltage 308 of the power amplifier chip 209 is a fixed value and is always kept in an on state, so as to simplify the self-heating control process.
The self-heating system of the satellite-borne active phased array four-channel microwave TR component capable of self-heating does not need to add any extra device, so that the light and small degree of the microwave TR component is ensured; in addition, the microwave TR assembly has the following technical characteristics and advantages:
the power amplifier chip 209, the amplitude limiting low-noise amplifying chip 210 and the multifunctional MMIC chip 205 are all radio frequency chips; the wave control chip 204, the receiving power modulation chip 206, and the transmitting power modulation chip (208 in fig. 5 or 302 in fig. 6) are all digital chips; specifically, the radio frequency chip is designed by adopting GaAs technology with good anti-radiation performance, and the total anti-radiation dose meets 6X 102Gy; the digital signal transmission adopts an Si chip, reinforcement design is carried out, and the total dose resistance meets 6X 102Gy; other components are made of products which are made of home products and can be free from radiation resistance tests.
Preferably, the CMOS device used in the self-heating star-loaded phased array four-channel microwave TR component is manufactured by adopting an SOI process, and adopts single event upset protection design measures, so that even if the individual microwave TR component is overturned, the imaging of the system is not influenced; meanwhile, the microwave TR component is powered up for a short time, and can be powered up again to be normal after being turned over; in addition, the CMOS device in the microwave TR component adopts a current limiting protection design, so that the latch-up effect of the CMOS circuit is prevented.
The star-loaded phased array four-channel microwave TR component capable of self-heating adopts the design allowance of micro discharge, the surface of the shell is plated with gold, inert gas and other protective measures are filled in the shell, the peak power of the microwave TR component is small, and the micro discharge effect is not easy to occur; the experimental result shows that the total radiation resistance index and total dose of the microwave TR component reach more than 6X 102Gy; single event upset is less than 10-8 times/bit/day; the component has no latch-up effect or has a very high latch-up threshold; the microdischarge design remainder takes 3dB of maximum power.
It should be understood that the foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the technical solutions of the present invention, and it should be understood that the foregoing may be added, substituted, altered or modified within the spirit and principle of the present invention by those skilled in the art, and all such added, substituted, altered or modified embodiments fall within the scope of the appended claims.
Claims (9)
1. A self-heatable star-loaded active phased array four-channel microwave TR assembly, comprising: the subarray system control circuit, a power amplifier chip, a self-heating control chip and a transmitting power supply modulation chip are arranged in each TR channel; wherein, the liquid crystal display device comprises a liquid crystal display device,
the drain voltage of the power amplifier chip is set to be a fixed value and always keeps an on state; the self-heating control chip is arranged as an adjustable grid voltage power supply modulation chip;
when the power amplifier chip is in an emission state, the subarray system control circuit controls the self-heating control chip to provide an emission state grid voltage required by work from an external power supply so as to regulate the power amplifier chip to generate an emission state drain electrode quiescent current, the emission state drain electrode quiescent current is increased to be working current when a microwave signal is input into the power amplifier chip, and the working current and the drain electrode voltage modulated by the emission power supply modulation chip are controlled by the subarray system control circuit to generate emission state power, one part of the emission state power is the microwave power to output an emission signal, and the other part of the emission state power is emission state heat consumption so that the power amplifier chip generates heat;
when the power amplifier chip is in a load state, the subarray system control circuit controls the self-heating control chip to increase the load state grid voltage provided by an external power supply for the power amplifier chip, so that the load state drain quiescent current for the power amplifier chip is improved, and the load state power which is totally the load state heat consumption is generated by controlling the drain voltage modulated by the transmitting power supply modulation chip through the subarray system control circuit, so that the power amplifier chip generates heat.
2. The self-heatable star-loaded active phased array four-channel microwave TR assembly of claim 1, wherein: the multi-functional digital signal processing system also comprises an SMP radio frequency connector, a 1:4 power divider, a multifunctional MMIC chip, a limiting low noise amplifier chip, a circulator isolator, a directional coupler, a four-in-one synthesizer, a detection circuit, a channel radio frequency connector and an antenna; wherein, the liquid crystal display device comprises a liquid crystal display device,
in a transmitting state, a radio frequency signal enters a 1:4 power divider through an SMP radio frequency connector and is divided into four parts, the four parts enter a multifunctional MMIC chip in each channel respectively to be subjected to attenuation, phase shifting and amplification, then the four parts are output to a corresponding circulator isolator after being subjected to saturated amplification through a power amplifier chip in each channel, then a small part of the radio frequency signal which is not more than one fourth is extracted through a directional coupler in each channel, the small part of the radio frequency signal in the four channels is synthesized through a four-in-one synthesizer and is output to a monitoring network of a subarray system through a detection circuit, and most of the radio frequency signal in the four channels is output to an antenna through the channel radio frequency connector and is transmitted outwards through the antenna;
in a receiving state, radio frequency signals received by the antenna enter respective channels through corresponding channel radio frequency connectors, enter limiting low-noise amplifier chips through directional couplers and circulator isolators in the respective channels in sequence to carry out low-noise amplification, then carry out attenuation, phase shifting and amplification treatment through multifunctional MMIC chips in the respective channels, and then combine the radio frequency signals in the four channels through 1:4 power splitters and output through SMP radio frequency connectors.
3. The self-heatable star-loaded active phased array four-channel microwave TR assembly of claim 1, wherein: the four identical and independent TR channels are combined to form a common cavity structure, and the common cavity structure comprises a cover plate, a surrounding frame, a bottom plate, a TR channel connector and a radio frequency main port connector which are respectively fixed with the surrounding frame through welding; the surrounding frame and the bottom plate are welded by laser to form a cavity structure of the microwave TR assembly; and the cover plate, the surrounding frame and the bottom plate are welded through laser seal welding, so that the outer shell of the microwave TR assembly is assembled.
4. A self-heatable star-loaded active phased array four-channel microwave TR assembly in accordance with claim 3, wherein: the cover plate and the surrounding frame are both made of titanium alloy TC4R materials; the bottom plate is made of aluminum-based silicon carbide materials.
5. A self-heatable star-loaded active phased array four-channel microwave TR assembly in accordance with claim 3, wherein: the low-temperature co-fired ceramic LTCC multilayer circuit substrate welded on the bottom plate is further arranged in the common cavity structure, a sinking cavity is locally dug in the LTCC multilayer circuit substrate, and the inside of the LTCC multilayer circuit substrate is used for integrating a multifunctional MMIC chip and a wave control chip; the top of the sinking cavity of the LTCC multilayer circuit substrate is covered with tantalum leather for radiation resistance and reinforcement.
6. A self-heatable star-loaded active phased array four-channel microwave TR assembly in accordance with claim 3, wherein: the inner surface of the outer shell of the microwave TR component is plated with gold, and the exposed outer surface adopts an aluminum shielding layer with the thickness of more than 3mm for radiation resistance; the microwave TR component is internally filled with inert gas before the cover plate is covered, so as to inhibit micro-discharge effect.
7. A self-heatable star-loaded active phased array four-channel microwave TR assembly in accordance with claim 3, wherein: an indium sheet with the thickness of 0.1mm is paved below the bottom plate so as to strengthen heat dissipation.
8. The self-heatable star-loaded active phased array four-channel microwave TR assembly of claim 1, wherein: the power amplifier chip is welded on a heat sink which is welded on the bottom plate of the outer shell.
9. The self-heatable star-loaded active phased array four-channel microwave TR assembly of claim 8, wherein: the power amplifier chip and the heat sink are welded by adopting gold-tin eutectic welding; the heat sink is made of a molybdenum copper sheet with gold-plated surface.
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| CN111258259B (en) * | 2020-04-27 | 2020-07-28 | 浙江航芯源集成电路科技有限公司 | Multi-channel high-integration surface-mounted TR component control chip |
| CN113037227B (en) * | 2021-03-12 | 2023-03-03 | 北京无线电测量研究所 | P-waveband ultra-wideband transmitting module |
| CN113327913A (en) * | 2021-05-28 | 2021-08-31 | 四川省星时代智能卫星科技有限公司 | Anti-irradiation packaging structure of satellite chip and manufacturing method thereof |
| CN113490300B (en) * | 2021-06-29 | 2022-08-02 | 四川大学 | Method and device for precise microwave heating based on time reversal calibration technology |
| CN113922829A (en) * | 2021-09-30 | 2022-01-11 | 中国船舶重工集团公司第七二四研究所 | Multi-functional transmission subassembly of multifrequency simultaneously |
| CN116500549B (en) * | 2023-06-28 | 2023-11-07 | 南京邮电大学 | LTCC-based four-channel X-band three-dimensional stacking structure TR assembly |
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| US6034633A (en) * | 1998-03-04 | 2000-03-07 | Northrop Grumman Corporation | Transmit/receive module having multiple transmit/receive paths with shared circuitry |
| US6784837B2 (en) * | 2000-04-07 | 2004-08-31 | Chief Controller, Research And Development Ministry Of Defence, Government Of India | Transmit/receiver module for active phased array antenna |
| CN105182297A (en) * | 2015-09-17 | 2015-12-23 | 浙江大学 | LTCC-based TR radio frequency assembly of phased array radar and phased array radar |
| CN105356051B (en) * | 2015-11-16 | 2018-02-23 | 中国电子科技集团公司第十研究所 | High-power target seeker tile style active phase array antenna |
| CN208433964U (en) * | 2018-05-24 | 2019-01-25 | 上海航天电子通讯设备研究所 | A kind of spaceborne miniaturization C-band binary channels T/R component |
| CN109239672A (en) * | 2018-09-29 | 2019-01-18 | 南京吉凯微波技术有限公司 | A kind of four-way microwave T/R component |
| CN110518326A (en) * | 2019-09-23 | 2019-11-29 | 中国科学院微小卫星创新研究院 | A kind of spaceborne phased array and microchannel cold plates of integrated design |
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