CN116500549B - LTCC-based four-channel X-band three-dimensional stacking structure TR assembly - Google Patents
LTCC-based four-channel X-band three-dimensional stacking structure TR assembly Download PDFInfo
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
- G01S2013/0236—Special technical features
- G01S2013/0245—Radar with phased array antenna
- G01S2013/0254—Active array antenna
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a four-channel X-band three-dimensional stacking structure TR assembly based on LTCC, which comprises a radio frequency SMP connector, a rectangular electric connector, a plurality of monolithic microwave integrated circuit MMIC chips and an upper LTCC circuit substrate and a lower LTCC circuit substrate; the MMIC chip comprises a multifunctional chip, a driving amplifier chip, a power amplifier chip, a limiter chip, a low noise amplifier chip, a power supply modulation chip, a PMOS tube chip and a negative pressure reference chip; MMIC chips are integrated on the receiving circuit channels and the transmitting circuit channels of the LTCC circuit substrate through TSVs and BGA packaging technology. The invention has the characteristics of compact structure, small volume, high wiring density, stable chemical performance, multiple channels, high performance, high reliability, high integration level, light weight, low power consumption and good heat dissipation, and can be widely applied to the fields of airborne, carrier-borne and satellite-borne phased array radars and communication.
Description
Technical Field
The invention belongs to the field of phased array radar TR components, and particularly relates to a four-channel X-band three-dimensional stacking structure TR component based on LTCC.
Background
The phased array radar can quickly and accurately search and track maneuvering targets, and is an important research object in the radar field. The TR assembly is one of the core parts in an active phased array radar system. The TR module generally includes a receiving channel, a transmitting channel, a power supply circuit, a logic control circuit, and the like, and has the main functions of amplifying, phase shifting, attenuating, and delaying signals. The rapid development of modern active phased array radars places higher demands on the performance, volume, and weight of the microwave TR assembly. Dividing according to the assembly mode, the TR component can be divided into a brick type structure and a tile type structure, in recent years, the brick type structure is widely applied to an active array, the technical maturity is high, the circuit design and the assembly difficulty are low, but the subarray integration level is low, and the longitudinal size is large. The tile type TR component unit has smaller size, adopts a high-density integration technology and a miniaturized, high-performance and high-reliability radio frequency vertical interconnection technology, has high subarray integration level, and has great advantages in the aspects of reducing cost, size, weight and the like. With the continuous advancement of high integration technology, the miniaturization and integration characteristics of the TR component applied to the airborne, carrier-borne and satellite-borne radars can be further enhanced.
Disclosure of Invention
The invention aims to: the invention aims to provide a four-channel X-band three-dimensional stacked structure TR component based on LTCC, which improves the integration level of the TR component, thereby reducing the volume of the component, promoting the miniaturization of the TR component and enabling the TR component to be applied to more places.
The technical scheme is as follows: the four-channel X-band three-dimensional stacking structure TR component based on the LTCC comprises a radio frequency SMP connector, a rectangular electric connector, a plurality of monolithic microwave integrated circuit MMIC chips and an upper LTCC circuit substrate and a lower LTCC circuit substrate; the multi-piece monolithic microwave integrated circuit MMIC chips comprise a multifunctional chip, a driving amplifier chip, a power amplifier chip, a limiter chip, a low noise amplifier chip, a power supply modulation chip, a PMOS tube chip and a negative pressure reference chip, and are integrated on a receiving circuit channel and a transmitting circuit channel of the LTCC circuit substrate through TSV and BGA;
the four-channel X-band three-dimensional stacked structure TR component consists of four paths of receiving and transmitting circuits, a public circuit, a power supply and a logic control circuit, and comprises four groups of identical power supply modulation circuits, four driving amplifiers, four power amplifiers, four limiters, four low-noise amplifiers, a multifunctional chip, an electric connector and a radio frequency connector. All the chips are monolithic microwave integrated circuits (Monolithic Microwave Integrated Circuit, abbreviated as MMICs) and are integrally manufactured on a Multi-layer circuit substrate by adopting a Multi-chip module (MCM) technology. MMIC multichip interconnection can greatly reduce design difficulty, improve integration level and reliability, and reduce volume and weight. The multilayer circuit substrate is made of low-temperature co-fired Ceramic (LTCC), is easy for multilayer wiring to improve integration level, and has good high-frequency and high-speed transmission characteristics, high temperature resistance, high packaging density and high reliability.
The pulse power amplifier modulation control ports of the four channels of the multifunctional chip are connected with the input end of the power supply modulation chip, the radio frequency emission port of the multifunctional chip is connected with the radio frequency input port of the driving amplifier chip, and the radio frequency receiving port is connected with the output port of the low noise amplifier;
the drain electrode of the PMOS tube chip is connected with two drain electrode working voltage ports of the power amplifier chip and a power output port of a driving PMOS tube grid electrode of the power supply modulation chip;
the drain electrode working voltage port of the driving amplifier chip is connected with the drain electrode of the PMOS tube chip and the power output port of the driving PMOS tube grid electrode of the power supply modulation chip, and is connected with the ground through a capacitor, the radio frequency input end of the driving amplifier chip is connected with the radio frequency transmitting end of the multifunctional chip, and the output end of the driving amplifier chip is connected with the radio frequency input end of the power amplifier;
the radio frequency input end of the power amplifier chip is connected with the radio frequency output end of the driving amplifier, and the radio frequency output end is used as an assembly output port; the grid electrode of the power amplifier chip is connected with the negative pressure reference chip to provide grid voltage after being connected with the capacitor, and the drain electrode of the power amplifier chip is connected with the drain electrode of the PMOS tube chip to provide drain voltage after being connected with the capacitor;
the output end of the amplitude limiter chip is connected with the radio frequency input end of the multifunctional chip, and the input end of the amplitude limiter chip is connected with an external radio frequency signal source;
the drain working voltage port of the low-noise amplifier chip is connected with the drain of the PMOS tube chip, the input end of the low-noise amplifier chip is connected with an external radio frequency signal source, and the output end of the low-noise amplifier chip is connected with the input end of the low-noise amplifier.
Further, the power amplifier chip, the amplitude limiter chip and the low noise amplifier chip are integrated in a step cavity structure of the lower LTCC circuit substrate, and the chips are connected to the step area through a gold wire bonding method; the power supply modulation chip, the PMOS tube and the negative pressure reference chip are integrated on the top layer of the upper LTCC substrate, and the multifunctional chip and the driving amplifier chip are integrated in the cavity digging structure of the upper LTCC substrate.
Further, the lower LTCC substrate has 6 layers, the 1 st, 2 nd and 3 rd layers are power control wiring layers from top to bottom, the 5 th layer is a 28V power layer, the 4 th and 6 th layers are ground layers, and a 4-layer substrate structure is adopted to design strip lines and coplanar waveguides to transmit radio frequency signals; the upper LTCC substrate has 22 layers, the top layer is a power supply wiring, the 8 th, 13 th and 19 th layers are radio frequency signal transmission layers from top to bottom, the 8 th layer is also used for carrying out partial control signal wiring, the 6 th, 10 th, 16 th and 22 th layers are ground layers, and the 7 th and 9 th layers are grid electrode and drain electrode power supply wiring layers of the power amplifier and the low noise amplifier.
Further, the radio frequency SMP connector is an SMP radio frequency button connector and is used for radio frequency signal transmission between a radio frequency signal source and the TR assembly, 9 SMP radio frequency button connectors are used for the four-channel X-band three-dimensional stacking structure TR assembly, 1 SMP radio frequency button connector is used for a main port, and 8 SMP radio frequency button connectors are used for a sub-port; the total port SMP radio frequency button connector is positioned on the top layer of the upper LTCC substrate, and the split port SMP radio frequency button connector is positioned at the input ends of limiter chips and the output ends of power amplifier chips of four channels on the bottom layer of the lower LTCC substrate.
Further, the rectangular electrical connector is a 25-core airtight micro-rectangular electrical connector; the input end of the 25-core airtight micro rectangular electric connector is connected with the beam controller for providing control signals and the output end of the direct current power supply, the output end is connected with the multifunctional chip, the high-voltage power supply modulation chip, the high-voltage PMOS tube chip and the multi-channel negative pressure reference chip, and the power supply signal connector is used for providing beam control signals and power supply for the TR component.
Further, the four-channel X-band three-dimensional stacked structure TR component realizes signal transmission between two LTCC substrates through a ball grid array packaging technology BGA, realizes the design of the four-channel X-band three-dimensional stacked structure TR component, adopts a Through Silicon (TSV) technology to realize circuit connection between different layers of substrates, in the upper layer LTCC substrate, a top layer power supply modulation circuit is composed of a high-voltage power supply modulation chip, a negative pressure reference chip and a PMOS tube, realizes chip connection in the same layer, is connected to the bottommost layer of the upper layer LTCC substrate through a TSV technology, is connected to the top layer of the lower layer LTCC substrate through a BGA ball, is connected to the limiter chip, the low-noise amplifier chip and the power amplifier chip through the TSV technology, and the power supply modulation circuit of the upper layer LTCC substrate is also connected with the multifunctional chip and the drive amplifier chip through the TSV technology; in addition to the power supply function, radio frequency signals are also transmitted through the TSV and the BGA balls; the driving amplifier and the multifunctional chip in the cavity digging structure of the upper LTCC substrate are in a structure from TSV to BGA to TSV, so that radio frequency signals are transmitted to the limiter chip, the low-noise amplifier chip and the power amplifier chip of the lower LTCC substrate.
Furthermore, the multifunctional chip is a GaAs MMIC amplitude-phase control multifunctional chip, and the chip integrates a quarter-power distributor, a single-pole double-throw switch, a 6-bit digital phase shifter, a 6-bit digital attenuator, an amplifier and 26x 5-bit serial port drive. The gain of the receiving branch is 4dB, the gain of the transmitting branch is 9dB, the typical working voltage Vee= -5V, the working voltage of the amplifier is +5V, and the TTL control level is adopted. The chip has the characteristics of low power consumption, multiple integrated functions and the like, can be applied to a microwave transceiver component, realizes the amplitude-phase control function of receiving and transmitting signals, and is grounded through a back through hole.
Furthermore, the power modulator chip is a high-voltage power modulator chip, is manufactured by adopting a high-voltage BCD technology, can convert a single-path TTL level into opposite high-voltage CMOS signal output, is used for driving the grid electrode of the power PMOS tube, has the function of quickly discharging the charge at the drain end after the PMOS tube is closed, and has the functions of detecting negative voltage power failure and closing the output, and the time for restarting after the closing is controllable. The single power supply supplies power, the working voltage Vcc is 28V-45V high-voltage CMOS output level, the high level is Vcc, the low level is Vcc-10V, the input is compatible with TTL level, the output driving current is large, and the current driving capability of 30mA is achieved. The JS3490 type high-voltage power supply modulator chip is matched with a rear-stage power PMOS tube, can be used as a power supply modulator of a GaN power amplifier, is matched with a negative pressure reference generator or a negative pressure follower, and can be used as a grid drive of the GaN power amplifier.
Furthermore, the PMOS tube is a high-voltage PMOS tube chip and is a discrete device manufactured by a P-channel VDMOS process. The power amplification power supply can be widely applied to power amplification power supply driving of a phased array radar antenna system. The source-drain breakdown voltage of the chip is-50V, the gate-source breakdown voltage is 16V, the on-resistance is less than 200mΩ, and the peak current is-9A.
Further, the negative pressure reference chip is a multi-path negative pressure reference chip which is manufactured by adopting a CMOS process and is powered by a power supply of-5V to generate-1.3V, -1.4V, -1.5V-1.6V, -1.7V, -1.8V, -1.9V, -2.0V, -2.1V, -2.2V, -2.3V,
-2.4V, -2.5V, -2.6V, -2.7V total 15 selectable negative pressure outputs. In use the circuit can only output one voltage, except T27 when the output is driven with some other voltage, the circuit must be shorted to T27. The chip mainly comprises a reference circuit, an operational amplifier and a feedback resistor network, the output voltage precision of the chip is 20mV, the current driving capability is 100mA, and the chip is mainly applied to ground equipment.
Furthermore, the power amplifier chip is a power amplifier chip realized based on a GaN HEMT transistor, is manufactured by adopting a GaN power MMIC process, has a working frequency range of 8 GHz-12 GHz, has a power gain of more than 19dB, is typical to saturated output power of 50W, and has typical power added efficiency of 40%. Can operate in a pulsed mode. The chip is grounded through the back through hole, the dual power supply works, the typical working voltage Vd= +28V, vg= -1.8V, the chip is mainly applied to microwave transceiver components, high-power solid-state transmitters and the like.
Furthermore, the driving amplifier chip is a driving power amplifier chip realized based on a GaN HEMT transistor, is manufactured by adopting a GaN power MMIC process, has a working frequency range of 8 GHz-12 GHz, has a power gain of more than 18dB and typical saturated output power of 1W, and can work in pulse and continuous wave (operating voltage drop) modes. The chip is grounded through the back through hole, a single power supply works, and the typical working voltage Vd is = +28V, and the chip is mainly applied to microwave transceiver components, high-power solid-state transmitters and the like.
Further, the limiter chip is a GaAs limiter chip manufactured by adopting a GaAs PIN process. The chip is grounded through the back via. The working frequency of the chip covers 8 GHz-12 GHz, the typical value of insertion loss is 0.8dB, the standing-wave ratio of input and output is 1.6, the amplitude limiting level is 16dBm, and the power resistance is 60W. The chip has the function of protecting the power sensitive microwave element.
Furthermore, the low-noise amplifier chip is manufactured by a GaAs process, the frequency range covers 8 GHz-12 GHz, the gain is larger than 26dB, the noise coefficient is 1.3dB, and the 1dB attenuation power is 2dBm. The chip is powered by a +3.3V/5V single power supply.
Further, the X-band TR component has an X-band which is a radio wave band with a frequency of 8 GHz-12 GHz conforming to the IEEE 521-2002 standard.
The beneficial effects are that: compared with the prior art, the invention has the following remarkable advantages: the invention places the electronic components on the surface of the LTCC substrate, integrates the radio frequency chip in the cavity structure of the LTCC, has compact structure, small whole volume of the TR component and high wiring density, and has low material cost and stable chemical property by using the LTCC technology. The TR component has the characteristics of multiple channels, high performance, high reliability, high integration level, light weight, low power consumption and good heat dissipation. The method can be widely applied to the fields of airborne phased array radars, carrier-borne phased array radars and satellite-borne phased array radars and communication.
Drawings
FIG. 1 is a layout diagram of an upper LTCC substrate of the four-channel X-band three-dimensional stacked structure TR assembly;
FIG. 2 is a layout view of a lower LTCC substrate of the four-channel X-band three-dimensional stacked structure TR assembly;
fig. 3 is a schematic diagram of a TR assembly.
Detailed Description
The technical scheme of the invention is further described below with reference to the accompanying drawings.
The four-way GaAs MMIC amplitude phase control multifunctional chip is shown as U5 in the figure 1. The multifunctional MMIC chip is powered by +5V and-5V power supplies, the public port COM is externally connected with an SMP radio frequency connector and used for radio frequency signal transmission between a radio frequency signal source and a TR assembly, and the beam signal control port is connected with the 25-core airtight micro rectangular electric connector so as to control the multifunctional MMIC chip by an external beam control signal. The pulse power amplifier modulation control ports of four channels of the multifunctional MMIC chip are connected with the input end of the high-voltage power supply modulation chip, the radio-frequency emission port is connected with the radio-frequency input port of the driving amplifier chip, and the radio-frequency receiving port is connected with the output port of the low-noise amplifier. The multifunctional chip is integrated with a quarter-power distributor, a single-pole double-throw switch, a 6-bit digital phase shifter, a 6-bit digital attenuator, an amplifier, 26x5 serial port drive and the like, and the integration level of the TR component is remarkably improved. The multifunctional chip can complete the functions of signal distribution, phase shifting, attenuation and amplification, and can realize the receiving and transmitting conversion of the radio frequency switch through beam control.
In fig. 1, 1-25 are interfaces of connectors external to the component connection.
Each TR channel is provided with a driver amplifier chip, positioned in fig. 1 as U6, U7, U8 and U9. The input end of the driving amplifier chip is connected with the radio frequency output end of the multifunctional chip, and the output end of the driving amplifier chip is connected with the radio frequency input end of the power amplifier. The driving amplifier is used for providing larger input power for the power amplifier of the subsequent stage. The driving amplifier chip and the multifunctional chip are integrated in a cavity digging structure of the upper LTCC substrate in total of 5 chips.
Each TR channel is provided with a high voltage power modulation chip, in fig. 1 at positions U2, U4, U11 and U13. The high-voltage power supply modulation chip needs to be connected with a +28V power supply for driving and a negative pressure of-5V for detection, and also needs to be externally connected with a 0.1uF capacitor so as to enable +5V output to be generated inside the chip for test monitoring. The input end of the high-voltage power supply modulation chip is connected with the pulse power amplifier modulation control end of the multifunctional chip, and the two power output ends POUT and OUT are connected with the grid electrode and the drain electrode of the high-voltage PMOS tube. The high-voltage power supply modulation chip is used for driving the PMOS tube of the rear stage and outputting the power supply modulation chip serving as a power supply modulator of the rear stage GaN power amplifier.
Each TR channel is provided with multiple negative pressure reference chips, positioned in fig. 1 as U1, U3, U10 and U12. The multi-channel negative pressure reference chip is powered by a-5V power supply, and the output end of the multi-channel negative pressure reference chip is connected with the drain electrode of the rear-stage GaN power amplifier to provide proper drain electrode voltage.
Each TR channel is provided with a high-voltage PMOS tube chip, and the positions in the figure 1 are Q1, Q2, Q3 and Q4. The source electrode of the high-voltage PMOS tube is powered by a +28V power supply, the drain electrode is connected with the output port of the high-voltage power supply modulation chip and used for rapidly discharging the current of the drain end after the PMOS tube is turned off, and the grid electrode is connected with the output port of the high-voltage power supply modulation chip and used for providing voltage driving for the PMOS tube.
The high-voltage power supply modulation chip, the multipath negative pressure reference chip and the high-voltage PMOS tube chip are integrated on the top layer of the upper LTCC substrate in total.
Each TR channel is provided with a GaN MMIC power amplifier chip, positioned P1, P2, P3 and P4 in fig. 2. The input end of the power amplifier chip is connected with the output end of the driving amplifier, and the output end is used as an output port of the component. The power amplifier is used for amplifying the signal output by the driving amplifier again to realize larger power output.
Each TR channel is provided with GaAs MMIC limiter chips, in fig. 2 at positions L1, L2, L3 and L4. The input end of the amplitude limiter chip is connected with the receiving signal output end of the multifunctional chip, and the output end of the amplitude limiter chip is connected with the input end of the low-noise amplifier chip. The limiter can limit the power entering the back-end chip and protect sensitive electronic components from being damaged by high-power signals.
Each TR channel is provided with GaAs MMIC low noise amplifier chips, positioned L5, L6, L7 and L8 in fig. 2. The input end of the low-noise amplifier chip is connected with the output end of the amplitude limiter chip, and the output end of the low-noise amplifier chip is connected with the input end of the multifunctional chip. The low noise amplifier is used to amplify weak signals and can reduce noise interference.
The power amplifier chip, the amplitude limiter chip and the low noise amplifier chip are integrated in a step cavity structure of the lower LTCC substrate in total of 12 chips.
The connectors of the TR component are SMP radio frequency button connectors, the SMP radio frequency button connectors are used for radio frequency signal transmission between radio frequency signals and the TR component, 1 SMP radio frequency button connector of the upper LTCC substrate is positioned at the right center in the figure 1, 8 SMP radio frequency button connectors of the lower LTCC substrate are positioned at the input ends of limiter chips and the output ends of power amplifier chips of four channels of the lower LTCC substrate
The electrical connector of the TR component is a 25-core airtight micro rectangular electrical connector, the connector introduces an external beam control signal and a direct current power supply into the four-channel X-wave band three-dimensional stacked structure TR component, and 25 output interfaces are connected with the multifunctional chip, the high-voltage power supply modulation chip, the high-voltage PMOS tube chip and the multi-channel negative pressure reference chip. The 25-core airtight micro-rectangular electrical connector socket position is left side J1 in fig. 1.
LTCC technology is convenient for realizing connection between chips and electronic components in a multilayer substrate, and Ball Grid Array (BGA) can also realize vertical transmission of radio frequency signals, thereby being beneficial to high-density integration of components. Therefore, in the design of the three-dimensional miniaturized T/R component, the signal transmission between two LTCC substrates is realized through BGA, and the design of the four-channel X-band three-dimensional stacked structure TR component is realized. Among the multi-layer LTCC substrates, the connection of circuits among the substrates of different layers is realized by adopting a Through Silicon Via (TSV) technology, and the TSV technology is a key for realizing miniaturization and improving integration level of a microsystem.
The four-channel X-band three-dimensional stacking structure TR assembly is formed by stacking two LTCC substrates through BGA. The lower LTCC substrate has 6 layers, the 1 st, 2 nd and 3 rd layers are power supply control wiring layers, the 5 th layer is a 28V power supply layer, and the 4 th and 6 th layers are ground layers. The strip line and the coplanar waveguide are designed by adopting a 4-layer substrate structure to transmit radio frequency signals. The power amplifier chip, the amplitude limiter chip and the low noise amplifier chip are integrated in a step cavity structure, and the chips are connected to the step area through a gold wire bonding method. The upper LTCC substrate has 22 layers, the top layer is a power supply wiring, the 8 th, 13 th and 19 th layers are radio frequency signal transmission layers, the 8 th layer also carries out partial control signal wiring, the 6 th, 10 th, 16 th and 22 th layers are ground layers, and the 7 th and 9 th layers are grid electrode and drain electrode power supply wiring layers of the power amplifier and the low noise amplifier. The power supply modulation chip, the PMOS tube and the negative pressure reference chip are integrated on the top layer of the LTCC substrate, and the multifunctional MMIC chip and the drive amplifier chip are integrated in the cavity digging structure.
The four-channel X-band three-dimensional stacking structure TR component based on the LTCC realizes higher integration level through TSV and BGA technologies. In the upper LTCC substrate, a power supply modulation circuit at the top layer is composed of a high-voltage power supply modulation chip, a negative pressure reference chip and a PMOS tube, the connection of the chips is realized in the same layer, the chips are connected to the bottommost layer of the upper LTCC substrate through a TSV technology, the chips are connected to the top layer of the lower LTCC substrate through BGA balls, and the chips are connected to the limiter chip, the low-noise amplifier chip and the power amplifier chip through TSVs in the lower LTCC substrate. The power supply modulation circuit of the upper LTCC substrate is also connected with the multifunctional chip and the driving amplifier chip through TSV technology. In addition to the power function, radio frequency signals are also transmitted through the TSV and BGA balls. The driving amplifier and the multifunctional chip in the cavity digging structure of the upper LTCC substrate are in a structure from TSV to BGA to TSV, so that radio frequency signals are transmitted to the limiter chip, the low-noise amplifier chip and the power amplifier chip of the lower LTCC substrate.
The working process of the radio frequency signal in the specific embodiment is as follows:
when the antenna is in a transmitting state, radio frequency signals from a radio frequency signal source enter the amplitude-phase multifunctional chip through the top SMP radio frequency button connector, the radio frequency signals are divided into four paths of radio frequency signals through a quarter-power distributor in the amplitude-phase multifunctional chip, the amplitude-phase multifunctional chip attenuates, phase-shifts and amplifies the four paths of radio frequency signals, the output of the amplitude-phase multifunctional chip enters a driving amplifier to carry out primary amplification, the output of the amplitude-phase multifunctional chip is input into a power amplifier chip to carry out secondary amplification, the radio frequency signals realize large-amplitude amplification of power through the two-stage power amplifiers, and finally the radio frequency signals are output through the SMP radio frequency button connectors at the output ends of the four bottom power amplifier chips and are transmitted outwards through the antenna.
When the system is in a receiving state, radio frequency signals enter SMP radio frequency button connectors at the input ends of four bottom limiter chips through antennas, then enter the limiter chips, limit the size protection components of the received signals of the components, then enter the channel low-noise amplifier chips, the received radio frequency signals enter the amplitude-phase multifunctional chips after being amplified, the amplitude-phase multifunctional chips attenuate, phase shift and amplify the radio frequency signals and output the radio frequency signals to a four-in-one power synthesizer, and the four-in-one power synthesizer combines the radio frequency signals of the four channels and outputs the signals to the system through the SMP radio frequency button connectors at the top layer.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. Several equivalent substitutions or obvious modifications will occur to those skilled in the art to which this invention pertains without departing from the spirit of the invention, and the same should be considered to be within the scope of this invention as defined in the appended claims.
Claims (2)
1. The four-channel X-band three-dimensional stacking structure TR assembly based on the LTCC is characterized by comprising a radio frequency SMP connector, a rectangular electric connector, a plurality of monolithic microwave integrated circuit MMIC chips and an upper LTCC circuit substrate and a lower LTCC circuit substrate; the multi-piece monolithic microwave integrated circuit MMIC chips comprise a multifunctional chip, a driving amplifier chip, a power amplifier chip, a limiter chip, a low noise amplifier chip, a power supply modulation chip, a PMOS tube chip and a negative pressure reference chip, and are integrated on a receiving circuit channel and a transmitting circuit channel of the LTCC circuit substrate through TSV and BGA;
the pulse power amplifier modulation control ports of the four channels of the multifunctional chip are connected with the input end of the power supply modulation chip, the radio frequency emission port of the multifunctional chip is connected with the radio frequency input port of the driving amplifier chip, and the radio frequency receiving port is connected with the output port of the low noise amplifier;
the drain electrode of the PMOS tube chip is connected with two drain electrode working voltage ports of the power amplifier chip and a power output port of a driving PMOS tube grid electrode of the power supply modulation chip;
the drain electrode working voltage port of the driving amplifier chip is connected with the drain electrode of the PMOS tube chip and the power output port of the driving PMOS tube grid electrode of the power supply modulation chip, and is connected with the ground through a capacitor, the radio frequency input end of the driving amplifier chip is connected with the radio frequency transmitting end of the multifunctional chip, and the output end of the driving amplifier chip is connected with the radio frequency input end of the power amplifier;
the radio frequency input end of the power amplifier chip is connected with the radio frequency output end of the driving amplifier, and the radio frequency output end is used as an assembly output port; the grid electrode of the power amplifier chip is connected with the negative pressure reference chip to provide grid voltage after being connected with the capacitor, and the drain electrode of the power amplifier chip is connected with the drain electrode of the PMOS tube chip to provide drain voltage after being connected with the capacitor;
the output end of the amplitude limiter chip is connected with the radio frequency input end of the multifunctional chip, and the input end of the amplitude limiter chip is connected with an external radio frequency signal source;
the drain electrode working voltage port of the low-noise amplifier chip is connected with the drain electrode of the PMOS tube chip, the input end of the low-noise amplifier chip is connected with an external radio frequency signal source, and the output end of the low-noise amplifier chip is connected with the input end of the low-noise amplifier;
the power amplifier chip, the amplitude limiter chip and the low noise amplifier chip are integrated in a step cavity structure of the lower LTCC circuit substrate, and the chips are connected to the step area through a gold wire bonding method; the power supply modulation chip, the PMOS tube and the negative pressure reference chip are integrated on the top layer of the upper LTCC substrate, and the multifunctional chip and the driving amplifier chip are integrated in the cavity digging structure of the upper LTCC substrate;
the radio frequency SMP connector is an SMP radio frequency button connector and is used for radio frequency signal transmission between a radio frequency signal source and the TR assembly, and the four-channel X-band three-dimensional stacking structure TR assembly uses 9 SMP radio frequency button connectors, wherein 1 SMP radio frequency button connector is used for a main port and 8 SMP radio frequency button connectors are used for a split port; the main port SMP radio frequency hair button connector is positioned on the top layer of the upper LTCC substrate, and the split port SMP radio frequency hair button connector is positioned at the input ends of limiter chips and the output ends of power amplifier chips of four channels on the bottom layer of the lower LTCC substrate;
the rectangular electric connector is a 25-core airtight micro rectangular electric connector; the input end of the 25-core airtight micro rectangular electric connector is connected with a beam controller for providing control signals to the outside and the output end of a direct current power supply, the output end of the 25-core airtight micro rectangular electric connector is connected with the multifunctional chip, the power supply modulation chip, the PMOS tube chip and the negative pressure reference chip, and the power supply signal connector is used for providing beam control signals and power supply for the TR assembly;
the lower LTCC substrate has 6 layers, the 1 st, 2 nd and 3 rd layers are power control wiring layers from top to bottom, the 5 th layer is a 28V power layer, the 4 th and 6 th layers are ground layers, and a 4-layer substrate structure is adopted to design strip lines and coplanar waveguides to transmit radio frequency signals; the upper LTCC substrate comprises 22 layers, wherein the top layer is a power supply wiring, the 8 th, 13 th and 19 th layers are radio frequency signal transmission layers from top to bottom, the 8 th layer is also used for carrying out partial control signal wiring, the 6 th, 10 th, 16 th and 22 th layers are ground layers, and the 7 th and 9 th layers are grid electrode and drain electrode power supply wiring layers of the power amplifier and the low noise amplifier;
the four-channel X-band three-dimensional stacked structure TR component realizes signal transmission between two LTCC substrates through a Ball Grid Array (BGA) packaging technology, realizes the design of the four-channel X-band three-dimensional stacked structure TR component, adopts a Through Silicon (TSV) technology to realize circuit connection between different layers of substrates between two layers of LTCC substrates, and in the upper layer of LTCC substrate, a power supply modulation circuit of a top layer is composed of a power supply modulation chip, a negative pressure reference chip and a P-channel metal oxide semiconductor (PMOS) tube, realizes chip connection in the same layer, is connected to the bottommost layer of the upper layer of LTCC substrate through a TSV technology, is connected to the top layer of the lower layer of LTCC substrate through a BGA ball, is connected to the limiter chip, the low noise amplifier chip and the power amplifier chip through the TSV in the lower layer of LTCC substrate, and the power supply modulation circuit of the upper layer of LTCC substrate is also connected with the multifunctional chip and the drive amplifier chip through a TSV technology; in addition to the power supply function, radio frequency signals are also transmitted through the TSV and the BGA balls; the driving amplifier and the multifunctional chip in the cavity digging structure of the upper LTCC substrate are in a structure from TSV to BGA to TSV, so that radio frequency signals are transmitted to the limiter chip, the low-noise amplifier chip and the power amplifier chip of the lower LTCC substrate;
the multifunctional chip is a GaAs MMIC amplitude-phase control multifunctional chip, and integrates a one-to-four power distributor, a single-pole double-throw switch, a 6-bit digital phase shifter, a 6-bit digital attenuator, an amplifier and a 26x 5-bit serial port driver;
the power supply modulation chip is manufactured by adopting a high-voltage BCD process, can convert a single-path TTL level into opposite high-voltage CMOS signal output, is used for driving the grid electrode of the power PMOS tube, and has the function of quickly discharging the charge at the drain end after the PMOS tube is closed; the PMOS tube chip is a high-voltage PMOS tube chip and is a discrete device manufactured by a P-channel VDMOS process; the negative pressure reference chip is manufactured by adopting a CMOS (complementary metal oxide semiconductor) process, is powered by a-5V power supply and generates 15 grades of selectable negative pressure output from-1.3V to-2.7V;
the power amplifier chip is manufactured by adopting a GaN power MMIC process, the working frequency range covers 8 GHz-12 GHz, the power gain is larger than 19dB, and the typical saturated output power is 50W; the driving amplifier chip is manufactured by adopting a GaN power MMIC process, the working frequency range covers 8 GHz-12 GHz, the power gain is greater than 18dB, and the typical saturated output power is 1W; the limiter chip is manufactured by adopting a GaAs PIN process, and the working frequency covers 8 GHz-12 GHz; the low-noise amplifier chip is manufactured by adopting a GaAs process, and the frequency range covers 8 GHz-12 GHz.
2. The four-channel X-band three-dimensional stacked structure TR assembly based on LTCC according to claim 1, wherein said X-band TR assembly has an X-band of radio waves having a frequency ranging from 8GHz to 12GHz conforming to IEEE 521-2002 standard.
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| CN117640713B (en) * | 2024-01-25 | 2024-04-02 | 深圳和润达科技有限公司 | RPC-based data processing method and device for chemical composition equipment |
| CN117674879B (en) * | 2024-01-31 | 2024-04-02 | 成都华兴大地科技有限公司 | Brick type TR module |
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