CN117613557B - Three-dimensional phased array receiving assembly and phased array system - Google Patents
Three-dimensional phased array receiving assembly and phased array system Download PDFInfo
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- CN117613557B CN117613557B CN202410085666.5A CN202410085666A CN117613557B CN 117613557 B CN117613557 B CN 117613557B CN 202410085666 A CN202410085666 A CN 202410085666A CN 117613557 B CN117613557 B CN 117613557B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/03—Details of HF subsystems specially adapted therefor, e.g. common to transmitter and receiver
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
- G01S7/285—Receivers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/35—Details of non-pulse systems
- G01S7/352—Receivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/0006—Particular feeding systems
- H01Q21/0025—Modular arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/28—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the amplitude
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
- G01S2013/0236—Special technical features
- G01S2013/0245—Radar with phased array antenna
Abstract
The invention discloses a three-dimensional phased array receiving assembly and a phased array system, wherein the assembly comprises an upper substrate and a lower substrate which are sequentially overlapped, peripheral frames are covered on the periphery of the upper substrate, the peripheral frames are covered on the top of the lower substrate, the peripheral frames and the lower substrate are sealed, a first radio frequency signal transmission link layer is arranged in the upper substrate, a first through hole group is arranged on the first radio frequency signal transmission link layer, first through hole metal is arranged in the first through hole group, and at least one limiter and a low noise amplifier are arranged on the top of the upper substrate; a second radio frequency signal transmission link layer is arranged in the lower substrate, a groove with an upward opening is arranged at the top of the lower substrate, a second through hole group is arranged on the second radio frequency signal transmission link layer, second through hole metal is arranged in the second through hole group, and a multi-functional chip with a phase is arranged in the groove; the antenna feed point is connected with the amplitude phase multifunctional chip through the amplitude limiter and the low noise amplifier in sequence. The invention realizes low noise, heterogeneous integration, miniaturization and high air tightness of the receiving component.
Description
Technical Field
The invention relates to the technical field of radar antennas, in particular to a three-dimensional phased array receiving assembly and a phased array system.
Background
The receiving front end is an important component of the phased array antenna, and the tile-type phased array antenna receiving (R) front end is usually integrated on the back of the antenna, so as to realize miniaturized integrated integration. However, in the millimeter wave frequency band, due to the limitation of the spacing between the antenna array elements, the R component is difficult to be laid out in a compact space by adopting a traditional module mode.
At present, a phased array R component is generally in a traditional planar design, all chips are tiled on a printed circuit board (Printed Circuit Board, PCB) or other carrier boards in a welding mode, but planar high-density interconnection is realized through a substrate, and the size of the planar phased array R component is limited by a process, so that the technical requirements of integrated, high-density and compact layout of phased array caliber synthesis in multi-channel receiving are difficult to meet.
Disclosure of Invention
The invention aims to overcome the defects of large volume, low integration level and low density caused by the fact that a phased array R component in the prior art realizes planar high-density interconnection through a substrate, and provides a three-dimensional phased array receiving component and a phased array system.
The technical proposal of the invention provides a three-dimensional phased array receiving assembly, which comprises an upper substrate and a lower substrate which are sequentially overlapped, wherein the periphery of the upper substrate is covered with a peripheral frame which is covered on the top of the lower substrate, the peripheral frame and the lower substrate are sealed,
A first radio frequency signal transmission link layer is arranged in the upper substrate, a first through hole group penetrating through the first radio frequency signal transmission link layer is arranged on the first radio frequency signal transmission link layer, first through hole metal is arranged in the first through hole group, and at least one limiter and a low noise amplifier are arranged at the top of the upper substrate;
A second radio frequency signal transmission link layer is arranged in the lower substrate, a groove with an upward opening is formed in the top of the lower substrate, a second through hole group penetrating through the second radio frequency signal transmission link layer is formed in the second radio frequency signal transmission link layer, second through hole metal is arranged in the second through hole group, and a multi-functional chip with an amplitude phase is arranged in the groove;
The input end of the amplitude limiter is in communication connection with an antenna feed point through the first radio frequency signal transmission link layer and the second radio frequency signal transmission link layer, and the output end of the amplitude limiter is in communication connection with the input end of the low noise amplifier;
The output end of the low noise amplifier is in communication connection with the amplitude-phase multifunctional chip through the first radio frequency signal transmission link layer and the second radio frequency signal transmission link layer.
In one optional technical scheme, the first radio frequency signal transmission link layer comprises a first radio frequency layer, a first grounding layer, a first digital layer and a second grounding layer which are sequentially arranged from top to bottom, the second radio frequency signal transmission link layer comprises a third grounding layer, a second radio frequency layer, a fourth grounding layer, a second digital layer, a fifth grounding layer, a third radio frequency layer and a sixth grounding layer which are sequentially arranged from top to bottom,
A first solder ball array ball is arranged at the bottom of the sixth grounding layer, a second solder ball array ball is arranged between the second grounding layer and the third grounding layer, a third solder ball array ball is arranged between the amplitude phase multifunctional chip and the second radio frequency layer,
The input end of the amplitude limiter is in communication connection with the antenna feed point through the first radio frequency layer, the second solder ball array ball, the third ground layer and the first solder ball array ball in sequence;
The output end of the low noise amplifier is in communication connection with the amplitude phase multifunctional chip through the first radio frequency layer, the first digital layer, the second grounding layer, the second solder ball array ball, the third radio frequency layer, the third solder ball array ball and the sixth grounding layer in sequence.
In one optional technical scheme, the first radio frequency layer is provided with a coplanar waveguide wire and a bond alloy wire, the input end of the limiter is in communication connection with the coplanar waveguide wire through the bond alloy wire, the output end of the limiter is in communication connection with the input end of the low noise amplifier through the bond alloy wire, and the output end of the low noise amplifier is in communication connection with the coplanar waveguide wire through the bond alloy wire.
In one of the alternative technical schemes, one end of the coplanar waveguide layer line is provided with a capacitive matching branch for carrying out impedance matching on the bond alloy wires, and the surface waveguide layer line is in communication connection with the bond alloy wires through the capacitive matching branch.
In one of the alternative solutions, at least one parting bead is arranged in the peripheral frame, the parting bead forms the peripheral frame into at least two chambers, and the limiter and the low noise amplifier are arranged in each chamber.
In one of the alternative solutions, the shapes of the first via metal and the second via metal are cylindrical, and capacitive matching discs for performing impedance matching on the first radio frequency signal transmission link layer and the second radio frequency signal transmission link layer are sleeved on the first via metal and the second via metal.
In one of the alternative solutions, a plurality of grounding posts are disposed around the first through hole group and the second through hole group.
In one of the alternative solutions, a first simulation port is provided at the first ball array ball, a second simulation port is provided at the limiter, a third simulation port is provided at the low noise amplifier, and a fourth simulation port is provided at the third ball array ball.
In one of the alternative solutions, the upper substrate and the lower substrate are made of ceramic.
The technical scheme of the invention also provides a phased array system which comprises the three-dimensional phased array receiving assembly.
After the technical scheme is adopted, the method has the following beneficial effects: the upper substrate is overlapped on the lower substrate, the limiter and the low-noise amplifier are arranged at the top of the upper substrate, the groove is arranged at the top of the lower substrate, the amplitude-phase multifunctional chip is arranged in the groove, the first radio frequency signal transmission link layer is arranged in the upper substrate, the second radio frequency signal transmission link layer is arranged in the lower substrate, the input end of the limiter is in communication connection with the antenna feed point through the first radio frequency signal transmission link layer and the second radio frequency signal transmission link layer, the output end of the limiter is in communication connection with the input end of the low-noise amplifier, and the output end of the low-noise amplifier is in communication connection with the amplitude-phase multifunctional chip through the first radio frequency signal transmission link layer and the second radio frequency signal transmission link layer, so that circuits with different materials, different structures and different functions are integrated into a whole in three-dimensional space, the integration degree is improved, the volume is reduced, and the design complexity and the production cost are reduced; and peripheral frames are covered on the periphery of the upper substrate and are covered on the top of the lower substrate, and the lower substrate is sealed, so that the air tightness is improved, and a three-dimensional phased array receiving assembly with low noise, heterogeneous integration, miniaturization and high air tightness is provided.
Drawings
The present disclosure will become more readily understood with reference to the accompanying drawings. It should be understood that: the drawings are for illustrative purposes only and are not intended to limit the scope of the present invention. In the figure:
FIG. 1 is a schematic diagram of a three-dimensional phased array receiving assembly according to an embodiment of the present invention;
fig. 2 is a schematic circuit schematic diagram of a three-dimensional phased array receiving component according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an upper substrate according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a lower substrate according to an embodiment of the present invention;
FIG. 5 is a schematic circuit diagram of an upper substrate according to an embodiment of the present invention;
FIG. 6 is a cross-sectional view of an upper or lower substrate according to an embodiment of the present invention;
fig. 7 is a transmission model of the rf input to the limiter input;
FIG. 8 is a schematic diagram of return loss simulation results from a radio frequency input to a limiter input;
FIG. 9 is a schematic diagram of insertion loss simulation results from a radio frequency input to a limiter input;
FIG. 10 is a transmission model of the output of the low noise amplifier to the input of the amplitude phase multifunctional chip;
FIG. 11 is a diagram showing the simulation result of return loss from the output end of the low noise amplifier to the input end of the amplitude phase multifunctional chip;
FIG. 12 is a schematic diagram showing the simulation result of insertion loss from the output end of the low noise amplifier to the input end of the amplitude phase multifunctional chip;
FIG. 13 is a schematic diagram of a cavity eigenmode model structure.
Reference numeral control table:
10-an upper substrate; 11-a first radio frequency signal transmission link layer; 111-a first radio frequency layer; 112-a first ground layer; 113-a first digital layer; 114-a second ground layer; 115-coplanar waveguide line; 1151-capacitively matching branches; 116-bond wires; 12-a first via metal; 13-limiter; a 14-low noise amplifier; 20-a lower substrate; 21-a second radio frequency signal transmission link layer; 211-a third ground layer; 212-a second radio frequency layer; 213-fourth ground plane; 214-a second digital layer; 215-a fifth ground layer; 216-a third radio frequency layer; 217-sixth ground plane; 218 first solder ball array balls; 219-second solder ball array balls; 220-third ball-grid array balls; 22-grooves; 23-a second via metal; 24-amplitude phase multifunctional chip; 30-peripheral frame; 31-division bars; 32-chambers; 40-a capacitive matching disk; 50-ground post.
Detailed Description
Specific embodiments of the present invention will be further described below with reference to the accompanying drawings.
It is to be readily understood that, according to the technical solutions of the present invention, those skilled in the art may replace various structural modes and implementation modes with each other without changing the true spirit of the present invention. Accordingly, the following detailed description and drawings are merely illustrative of the invention and are not intended to be exhaustive or to limit the invention to the precise form disclosed.
Terms of orientation such as up, down, left, right, front, rear, front, back, top, bottom, etc. mentioned or possible to be mentioned in the present specification are defined with respect to the configurations shown in the drawings, which are relative concepts, and thus may be changed according to different positions and different use states thereof. These and other directional terms should not be construed as limiting terms.
As shown in fig. 1 to 5, the three-dimensional phased array receiving assembly provided by an embodiment of the present invention includes an upper substrate 10 and a lower substrate 20 stacked in sequence, a peripheral frame 30 is covered around the upper substrate 10, the peripheral frame 30 covers the top of the lower substrate 20, and a seal is formed between the peripheral frame 30 and the lower substrate 20,
The upper substrate 10 is internally provided with a first radio frequency signal transmission link layer 11, the first radio frequency signal transmission link layer 11 is provided with a first through hole group penetrating through the first radio frequency signal transmission link layer 11, the first through hole group is internally provided with a first through hole metal 12, and the top of the upper substrate 10 is provided with at least one limiter 13 and a low noise amplifier 14;
A second radio frequency signal transmission link layer 21 is arranged in the lower substrate 20, a groove 22 with an upward opening is arranged at the top of the lower substrate 20, a second through hole group penetrating through the second radio frequency signal transmission link layer 21 is arranged on the second radio frequency signal transmission link layer 21, a second through hole metal 23 is arranged in the second through hole group, and a multi-functional chip 24 with a phase is arranged in the groove 22;
The input end of the limiter 13 is in communication connection with an antenna feed point through the first radio frequency signal transmission link layer 11 and the second radio frequency signal transmission link layer 21, and the output end of the limiter 13 is in communication connection with the input end of the low noise amplifier 14;
The output of the low noise amplifier 14 is communicatively connected to the amplitude and phase multifunctional chip 24 via the first rf signal transmission link layer 11 and the second rf signal transmission link layer 21.
The three-dimensional phased array receiving assembly provided in this embodiment mainly includes an upper substrate 10, a lower substrate 20, and a peripheral frame 30.
The upper substrate 10 is overlapped on the top of the lower substrate 20, the size of the upper substrate 10 is smaller than that of the lower substrate 20, the peripheral frame 30 is covered on the periphery of the upper substrate 10 and covers the top of the lower substrate 20, and the peripheral frame 30 can form a seal between the lower substrate 20 and the upper substrate 20 in a seal welding mode, so that the air tightness of the three-dimensional phased array receiving assembly is realized.
The upper substrate 10 is provided with at least one limiter 13 and a low noise amplifier (Low Noise Amplifier, LNA) 14, and the limiter 13 and the LNA14 may be disposed on top of the upper substrate 10 using an adhesive bonding process. Limiter 13 is used to limit the relatively strong interfering signal and LNA14 is used to amplify the weak antenna signal. In order to achieve high frequency, high power, high efficiency, low noise electrical characteristics, among other things, the limiter 13 and LNA14 are fabricated using a high electron mobility transistor (Pseudomorphic High Electron Mobility Transistor, pHEMT) process in gallium arsenide (GaAs).
The middle of the top of the lower substrate 20 is provided with a groove 22 with an upward opening, and the front surface of the amplitude phase multifunctional chip 24 is arranged in the groove 22 by adopting a flip-chip bonding process and is directly interconnected with the lower substrate 20, so that the amplitude phase multifunctional chip 24 is buried on the lower substrate 20, thereby reducing the height, the volume and the transmission loss. The amplitude and phase multi-function chip 24 is used for beam forming. In order to further improve the integration level and reduce the number and cost of chip assembly, the amplitude-phase multifunctional chip 24 is manufactured by a silicon-based CMOS process.
As shown in fig. 2, the circuit principle of the three-dimensional phased array receiving assembly of the present invention is: an input of the limiter 13 is connected in communication with an antenna feed point, an output of the limiter 13 is connected in communication with an input of the low noise amplifier 14, and an output of the low noise amplifier 14 is connected in communication with the amplitude and phase multifunctional chip 24. In order to realize signal transmission between circuit elements, a first radio frequency signal transmission link layer 11 is disposed in the upper substrate 10, the first radio frequency signal transmission link layer 11 is used for transmitting signals, a first through hole group penetrating through the first radio frequency signal transmission link layer 11 is disposed on the first radio frequency signal transmission link layer 11, and a first through hole metal 12 is disposed in the first through hole group. The lower substrate 20 is internally provided with a second radio frequency signal transmission link layer 21, the second radio frequency signal transmission link layer 21 is used for transmitting signals, the second radio frequency signal transmission link layer 21 is provided with a second through hole group penetrating through the second radio frequency signal transmission link layer 21, the second through hole group is internally provided with a second through hole metal 23, and the upper substrate 10 and the lower substrate 20 are electrically interconnected through the first through hole metal 12 and the second through hole metal 23. When the antenna feed-in signal is used, the antenna feed-in signal is sequentially transmitted to the input end of the limiter 13 through the second radio frequency signal transmission link layer 21 and the first radio frequency signal transmission link layer 11, is output to the LNA14 through the limiter 13 in a limiting way, is amplified by the LNA14 and is sequentially transmitted into the amplitude-phase multifunctional chip 24 through the first radio frequency signal transmission link layer 11 and the second radio frequency signal transmission link layer 21, so that the wave beam forming is realized. The number of the through holes of the first through hole group and the second through hole group can be set according to the requirements of users, such as the signal transmission link layer, the signal transmission channel and the like.
The number of limiters 13 and LNAs 14 is related to the number of signal transmission channels, each signal transmission channel corresponds to a group of limiters 13 and LNAs 14, and in this embodiment, in order to implement four-channel signal transmission, the number of limiters 13 and LNAs 14 is four.
The top and bottom in this embodiment are the bottom on the side closer to the ground when in use, and the top on the side farther from the ground.
In the embodiment, the upper substrate is overlapped on the lower substrate, the limiter and the low noise amplifier are arranged at the top of the upper substrate, the groove is arranged at the top of the lower substrate, the amplitude phase multifunctional chip is arranged in the groove, the first radio frequency signal transmission link layer is arranged in the upper substrate, the second radio frequency signal transmission link layer is arranged in the lower substrate, the input end of the limiter is in communication connection with the antenna feed point through the first radio frequency signal transmission link layer and the second radio frequency signal transmission link layer, the output end of the limiter is in communication connection with the input end of the low noise amplifier, and the output end of the low noise amplifier is in communication connection with the amplitude phase multifunctional chip through the first radio frequency signal transmission link layer and the second radio frequency signal transmission link layer, so that circuits with different materials, different structures and different functions are integrated into a whole in a three-dimensional space, the integration degree is improved, the volume is reduced, and the design complexity and the production cost are reduced; and peripheral frames are covered on the periphery of the upper substrate and are covered on the top of the lower substrate, and the lower substrate is sealed, so that the air tightness is improved, and a three-dimensional phased array receiving assembly with low noise, heterogeneous integration, miniaturization and high air tightness is provided.
In one embodiment, as shown in fig. 3 and 4, the first rf signal transmission link layer 11 includes a first rf layer 111, a first ground layer 112, a first digital layer 113, and a second ground layer 114 sequentially disposed from top to bottom, the second rf signal transmission link layer 21 includes a third ground layer 211, a second rf layer 212, a fourth ground layer 213, a second digital layer 214, a fifth ground layer 215, a third rf layer 216, and a sixth ground layer 217 sequentially disposed from top to bottom,
The bottom of the sixth ground layer 217 is provided with a first ball-array ball 218, a second ball-array ball 219 is provided between the second ground layer 114 and the third ground layer 211, a third ball-array ball 220 is provided between the amplitude phase multifunctional chip 24 and the second radio frequency layer 212,
The input end of the limiter 13 is in communication connection with the antenna feed point through the first radio frequency layer 111, the second solder ball array ball 219, the third ground layer 211 and the first solder ball array ball 218 in sequence;
The output of the low noise amplifier 14 is communicatively coupled to the multi-function chip 24 via the first rf layer 111, the first digital layer 113, the second ground layer 114, the second solder ball array ball 219, the third rf layer 216, the third solder ball array ball 220, and the sixth ground layer 217 in sequence.
The upper substrate 10 is provided with 4 circuit layers in sequence from top to bottom, and comprises a first radio frequency layer 111, a first grounding layer 112, a first digital layer 113 and a second grounding layer 114, wherein the first radio frequency layer 111 provides an assembling area of a limiter 13 and a low noise amplifier 14 and radio frequency wiring; the first digital layer 113 is the power supply and control wiring. Wherein, the substrate thickness of the first radio frequency layer 111 and the first ground layer 112 is 0.2mm, and the substrate thickness of the first digital layer 113 and the second ground layer 114 is 0.1mm, thereby reducing the overall thickness of the upper substrate 10.
The lower substrate 20 is sequentially provided with 7 circuit layers from top to bottom, and comprises a third grounding layer 211, a second radio frequency layer 212, a fourth grounding layer 213, a second digital layer 214, a fifth grounding layer 215, a third radio frequency layer 216 and a sixth grounding layer 217, wherein a groove 22 is arranged in the middle of the third grounding layer 211, a flip-chip bonding pad is provided, the middle area of the third grounding layer 211 is sunk, the peripheral area of the third grounding layer 211 floats upwards, and the embedded of the amplitude-phase multifunctional chip 24 and peripheral circuits thereof is realized, so that the upper substrate 10 is structurally supported and electrically interconnected; the second radio frequency layer 212 is used to provide structural support; the fourth ground layer 213 and the second digital layer 214 are used for providing power and control wiring; the fifth ground plane 215, the third rf plane 216 and the sixth ground plane 217 are used for stripline rf switching. Wherein the substrate thicknesses of the third ground layer 211 and the second radio frequency layer 212 are 0.5mm, the substrate thicknesses of the fourth ground layer 213 and the second digital layer 214 are 0.1mm, and the substrate thicknesses of the fifth ground layer 215, the third radio frequency layer 216 and the sixth ground layer 217 are 0.4mm, thereby reducing the overall thickness of the lower substrate 20.
The bottom of the sixth ground layer 217 is provided with first Ball grid array (Ball GRID ARRAY, BGA) balls 218, and the first BGA balls 218 are used to provide radio frequency signal input and output. A second BGA ball 219 is disposed between the second ground layer 114 and the third ground layer 211, the second BGA ball 219 being for structural support and electrical interconnection. A third BGA ball 220 is disposed between the multi-functional chip 24 and the second rf layer 212, and the third BGA ball 220 is used for structural support and electrical interconnection.
As shown in fig. 2, the signal transmission path of the radio frequency input end of the three-dimensional phased array receiving component of the present invention to the input end of the top limiter 13 is "P1-P2-P3-P4", and the signal transmission path of the output end of the top low noise amplifier 14 is "P5-P6-P7-P8-P9-P10-P11-P12".
In one embodiment, as shown in fig. 5, the first rf layer 111 is provided with a coplanar waveguide line 115 and a bond wire 116, an input end of the limiter 13 is communicatively connected to the coplanar waveguide line 115 through the bond wire 116, an output end of the limiter 13 is communicatively connected to an input end of the low noise amplifier 14 through the bond wire 116, and an output end of the low noise amplifier 14 is communicatively connected to the coplanar waveguide line 115 through the bond wire 116.
The first radio frequency layer 111 is provided with the coplanar waveguide wire 115 and the bond alloy wire 116, the antenna feed-in signal is sequentially transmitted into the limiter 13 through the coplanar waveguide wire 115 and the bond alloy wire 116, and after the limiter 13 limits the relatively strong interference signal, the antenna feed-in signal is sequentially transmitted into the LNA14 through the bond alloy wire 116 and the coplanar waveguide wire 115, and the integration level and the miniaturization can be further improved and the shielding performance can be improved through the coplanar waveguide wire 115 and the bond alloy wire 116.
In one embodiment, as shown in FIG. 5, one end of the coplanar waveguide line 115 is provided with a capacitive matching stub 1151 for impedance matching the bond wire 116, and the coplanar waveguide line 115 is communicatively coupled to the bond wire 116 via the capacitive matching stub 1151.
The capacitive matching stub 1151 is disposed between the coplanar waveguide line 115 and the bond wire 116, the capacitive matching stub 1151 extends along a direction perpendicular to the coplanar waveguide line 115, and the capacitive matching stub 1151 is configured to perform impedance matching on the bond wire 116, thereby implementing low insertion loss transmission of signals.
In one embodiment, as shown in fig. 2 and 5, at least one parting bead 31 is provided in the peripheral frame 30, the parting bead 31 forming the peripheral frame 30 into at least two chambers 32, and a limiter 13 and a low noise amplifier 14 are provided in each chamber 32.
At least one parting bead 31 is arranged in the peripheral frame 30, the parting bead 31 forms the peripheral frame 30 into at least two chambers 32, the parting bead 31 is used for changing the eigenmodes (or resonant frequencies) of the chambers 32, so that the eigenmodes of the chambers 32 are out of the range of the working frequency band of the receiving component, the chambers 32 are prevented from generating stray (or in-band resonance), and meanwhile, the parting bead 31 can also play a role in isolation to prevent circuit elements in adjacent chambers 32 from being interfered. The number of the division bars 31 and the chambers 32 is related to the number of the signal transmission channels, one chamber corresponds to each signal transmission channel, and in this embodiment, in order to realize four-channel signal transmission, the number of the division bars 31 and the chambers 32 is four. To ensure that the eigenmodes of the cavity 32 are outside the operating frequency range of the receiving assembly, the cavity 32 is modeled first, and as shown in fig. 13, the model structure includes an upper cavity 1, an upper cavity 2, an upper cavity 3, an upper cavity 4 and a lower cavity, and then the model is subjected to eigenmode analysis, the solution results of which are shown in table 1 below, and as can be seen from the data solved in table 1 below, the eigenmodes of the cavity 32 are outside the operating frequency range and do not generate in-band resonance.
TABLE 1
In one embodiment, as shown in fig. 2 and 6, the first via metal 12 and the second via metal 23 are cylindrical in shape, and the first via metal 12 and the second via metal 23 are sleeved with a capacitive matching disc 40 for performing impedance matching on the first radio frequency signal transmission link layer 11 and the second radio frequency signal transmission link layer 21.
As shown in fig. 2, the signal input transmission path is "P1-P2-P3-P4", the radio frequency transmission structure through which the antenna feed signal sequentially passes from bottom to top is "coaxial BGA ball-coaxial via-coplanar wave layer wire-bond wire-chip pad", six transmission conversions are performed through seven different transmission structures, the same signal output transmission path is "P5-P6-P7-P8-P9-P10-P11-P12", and multiple different transmission structures are also required, so in order to achieve low insertion loss transmission of the signal, each conversion must perform impedance matching, as shown in fig. 6, the first through-hole metal 12 and the second through-hole metal 23 form a cylindrical inner core through the converted vias, the first through-hole metal 12 and the second through-hole metal 23 lay metal avoiding areas between the first radio frequency signal transmission link layer 11 and the second radio frequency signal transmission link layer 21, the first through hole metal 12 and the second through hole metal 23 are respectively sleeved with a capacitive matching disk 40 at each transmission link layer of the first radio frequency signal transmission link layer 11 and the second radio frequency signal transmission link layer 21, namely, the first through hole metal 12 and the second through hole metal 23 are respectively sleeved with the capacitive matching disk 40 at the positions of the first radio frequency layer 111, the first grounding layer 112, the first digital layer 113 and the second grounding layer 114, the third grounding layer 211, the second radio frequency layer 212, the fourth grounding layer 213, the second digital layer 214, the fifth grounding layer 215, the third radio frequency layer 216 and the sixth grounding layer 217, the quasi-coaxial broadband matching is carried out through the capacitive matching disk 40, the impedance matching is carried out on each transmission link layer, the first through hole metal 12, the second through-hole metal 23 and the capacitive matching disk 40 form a coaxial-like structure.
In one embodiment, as shown in fig. 2 and 6, a plurality of grounding posts 50 are disposed around the first and second via groups.
The periphery of the first through hole group and the second through hole group is surrounded by a grounding post 50, a plurality of grounding posts 50 are uniformly distributed in the circumferential direction of the first through hole group and the second through hole group, the grounding posts 50 extend to the bottom of the first radio frequency layer 111 from the sixth ground layer 217 by adopting metallized through holes, and the grounding posts 50 are used for simulating coaxial grounding shielding and avoiding interference.
In one embodiment, as shown in fig. 2, a first dummy port is provided at the first ball-array ball 218, a second dummy port is provided at the limiter 13, a third dummy port is provided at the low noise amplifier 14, and a fourth dummy port is provided at the third ball-array ball 220.
For ease of detection, a first emulation port is provided at the first BGA ball 218 (i.e., P1), a second emulation port is provided at the limiter 13 (i.e., P4), a third emulation port is provided at the low noise amplifier 14 (i.e., P5), and a fourth fax port is provided at the third BGA ball (i.e., P12).
In order to detect the loss, impedance matching, noise coefficient influence and the like of the three-dimensional phased array receiving component, a transmission model is constructed on the input end of the top limiter 13 of the radio frequency input end, as shown in fig. 7, simulation results of the transmission model are shown in fig. 8 and 9, the simulation results of fig. 8 and 9 show that the return loss of the transmission model is smaller than-24 dB and the insertion loss is smaller than 0.125dB in the working frequency range, and the impedance matching is better, the insertion loss is lower and the influence on the noise coefficient of the system is smaller. And a transmission model is constructed from the output end of the upper low noise amplifier 14 to the input end of the lower amplitude-phase multifunctional chip 24, as shown in fig. 10, the simulation results are shown in fig. 11 and 12, the simulation results of fig. 11 and 12 show that the return loss of the transmission model is less than-24 dB, the insertion loss is less than 0.245dB, the impedance matching is better, the insertion loss is low, and the link gain is not lost.
In one embodiment, the upper and lower substrates 10 and 20 are made of ceramic, so that the high frequency performance, reliability, thermal stability, thermal conductivity, air tightness, chemical property stability, moisture resistance and crack resistance of the receiving assembly are further improved.
The technical scheme of the invention also provides a phased array system which comprises the three-dimensional phased array receiving assembly.
In the embodiment, circuits with different materials, different structures and different functions are integrated into a whole in a three-dimensional space through the three-dimensional phased array receiving assembly, so that the integration level is improved, the volume is reduced, and the design complexity and the production cost are reduced; and peripheral frames are covered on the periphery of the upper substrate and are covered on the top of the lower substrate, and the upper substrate and the lower substrate are sealed, so that the air tightness is improved, and the low-noise heterogeneous integration, miniaturization and high air tightness of the phased array system are realized.
The above embodiments are only for illustrating the technical solution of the embodiments of the present invention, and are not limited thereto; although embodiments of the present invention have been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (9)
1. A three-dimensional phased array receiving assembly is characterized by comprising an upper substrate and a lower substrate which are sequentially overlapped, wherein peripheral frames are covered on the periphery of the upper substrate, the peripheral frames are covered on the top of the lower substrate, the peripheral frames and the lower substrate are sealed,
A first radio frequency signal transmission link layer is arranged in the upper substrate, a first through hole group penetrating through the first radio frequency signal transmission link layer is arranged on the first radio frequency signal transmission link layer, first through hole metal is arranged in the first through hole group, and at least one limiter and a low noise amplifier are arranged at the top of the upper substrate;
A second radio frequency signal transmission link layer is arranged in the lower substrate, a groove with an upward opening is formed in the top of the lower substrate, a second through hole group penetrating through the second radio frequency signal transmission link layer is formed in the second radio frequency signal transmission link layer, second through hole metal is arranged in the second through hole group, and a multi-functional chip with an amplitude phase is arranged in the groove;
The input end of the amplitude limiter is in communication connection with an antenna feed point through the first radio frequency signal transmission link layer and the second radio frequency signal transmission link layer, and the output end of the amplitude limiter is in communication connection with the input end of the low noise amplifier;
The output end of the low noise amplifier is in communication connection with the amplitude-phase multifunctional chip through the first radio frequency signal transmission link layer and the second radio frequency signal transmission link layer: the first radio frequency signal transmission link layer comprises a first radio frequency layer, a first grounding layer, a first digital layer and a second grounding layer which are sequentially arranged from top to bottom, the second radio frequency signal transmission link layer comprises a third grounding layer, a second radio frequency layer, a fourth grounding layer, a second digital layer, a fifth grounding layer, a third radio frequency layer and a sixth grounding layer which are sequentially arranged from top to bottom,
A first solder ball array ball is arranged at the bottom of the sixth grounding layer, a second solder ball array ball is arranged between the second grounding layer and the third grounding layer, a third solder ball array ball is arranged between the amplitude phase multifunctional chip and the second radio frequency layer,
The input end of the amplitude limiter is in communication connection with the antenna feed point through the first radio frequency layer, the second solder ball array ball, the third ground layer and the first solder ball array ball in sequence;
The output end of the low noise amplifier is in communication connection with the amplitude phase multifunctional chip through the first radio frequency layer, the first digital layer, the second grounding layer, the second solder ball array ball, the third radio frequency layer, the third solder ball array ball and the sixth grounding layer in sequence.
2. The three-dimensional phased array receive assembly of claim 1, wherein the first radio frequency layer has a coplanar waveguide line and a bond wire, wherein an input of the limiter is communicatively coupled to the coplanar waveguide line via the bond wire, wherein an output of the limiter is communicatively coupled to an input of the low noise amplifier via the bond wire, and wherein an output of the low noise amplifier is communicatively coupled to the coplanar waveguide line via the bond wire.
3. The three-dimensional phased array receive assembly of claim 2, wherein one end of the coplanar waveguide wire is provided with a capacitive matching stub for impedance matching the bond wire, the coplanar waveguide wire being communicatively coupled to the bond wire via the capacitive matching stub.
4. A three-dimensional phased array receive assembly as claimed in claim 3, wherein at least one spacer is provided within the peripheral frame, the spacer forming the peripheral frame into at least two chambers, each of the chambers having the limiter and the low noise amplifier provided therein.
5. The three-dimensional phased array receiving assembly of claim 1, wherein the first via metal and the second via metal are cylindrical in shape, and a capacitive matching disc for impedance matching the first radio frequency signal transmission link layer and the second radio frequency signal transmission link layer is sleeved on the first via metal and the second via metal.
6. The three-dimensional phased array receive assembly of claim 5, wherein a plurality of ground posts are provided around the first set of vias and the second set of vias.
7. The three-dimensional phased array receive assembly of claim 1, wherein the first ball array ball is provided with a first emulation port, the limiter is provided with a second emulation port, the low noise amplifier is provided with a third emulation port, and the third ball array ball is provided with a fourth emulation port.
8. The three-dimensional phased array receive assembly of any of claims 1-7, wherein the upper substrate and the lower substrate are ceramic.
9. A phased array system comprising a three dimensional phased array receive assembly as claimed in any one of claims 1 to 8.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111048500A (en) * | 2019-12-17 | 2020-04-21 | 中国电子科技集团公司第三十八研究所 | Integrally packaged radio frequency microsystem assembly |
| CN115666051A (en) * | 2022-06-23 | 2023-01-31 | 北京遥测技术研究所 | Integrated active phased array packaging antenna radio frequency microsystem |
| CN116500549A (en) * | 2023-06-28 | 2023-07-28 | 南京邮电大学 | LTCC-based four-channel X-band three-dimensional stacking structure TR assembly |
| CN116885457A (en) * | 2023-06-29 | 2023-10-13 | 浙江大学 | Phased array antenna, antenna packaging structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048500A (en) * | 2019-12-17 | 2020-04-21 | 中国电子科技集团公司第三十八研究所 | Integrally packaged radio frequency microsystem assembly |
| CN115666051A (en) * | 2022-06-23 | 2023-01-31 | 北京遥测技术研究所 | Integrated active phased array packaging antenna radio frequency microsystem |
| CN116500549A (en) * | 2023-06-28 | 2023-07-28 | 南京邮电大学 | LTCC-based four-channel X-band three-dimensional stacking structure TR assembly |
| CN116885457A (en) * | 2023-06-29 | 2023-10-13 | 浙江大学 | Phased array antenna, antenna packaging structure and manufacturing method thereof |
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