CN109239672A - A kind of four-way microwave T/R component - Google Patents
A kind of four-way microwave T/R component Download PDFInfo
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- CN109239672A CN109239672A CN201811144572.1A CN201811144572A CN109239672A CN 109239672 A CN109239672 A CN 109239672A CN 201811144572 A CN201811144572 A CN 201811144572A CN 109239672 A CN109239672 A CN 109239672A
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- 239000000463 material Substances 0.000 claims abstract description 8
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- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 238000011160 research Methods 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 230000000712 assembly Effects 0.000 claims description 9
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- 239000000919 ceramic Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
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- 230000010363 phase shift Effects 0.000 claims description 4
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 3
- 210000001161 mammalian embryo Anatomy 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 3
- 238000004891 communication Methods 0.000 abstract description 2
- 239000012071 phase Substances 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 10
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- 238000013461 design Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
Abstract
A kind of four-way microwave T/R component, it is the total cavity body structure of the identical four independent channel the T/R unifications of composition, whole component parts are all MMIC, it is integrated to be produced on same Mulitilayer circuit board, it is characterized by: microwave device is the multi-functional MMIC bare chip for being integrated with phase shifter, attenuator, working condition switch, clipping low-noise amplifier and driver, Mulitilayer circuit board is HTCC Mulitilayer circuit board.It is compact-sized, it is small in size, wiring density is high, the cost of material is low, high mechanical strength, stable chemical performance, it is corrosion-resistant, high temperature resistant has the characteristics that multichannel, high-performance, high reliability, high integration, lightness, low-power consumption, thermal diffusivity are good, and can monitor each channel T/R sends and receives width phase.Existing microwave T/R component is compared under conditions of identical function is with index, weight and volume reduces 30% or more.It can be widely applied in airborne, carrier-borne, spaceborne phase array radar and the communications field.
Description
Technical field
The present invention relates to radar array antennas, more particularly to a kind of four-way microwave T/R component.
Background technique
Microwave transmitter and receiver (Transmitter and Receiver, initialism T/R) component are active phases
One of the essential elements of battle array radar system are controlled, one end connects antenna, and the other end connects IF processing unit, constitutes wireless hair
Send with reception system, function be signal is amplified, phase shift, decaying.Its performance directly affects entire active phased array
The fast development of the Effect on Detecting of radar system, modern Connectors for Active Phased Array Radar proposes the electrical property of T/R component, volume, weight
Higher requirement is gone out, T/R component especially airborne, carrier-borne, in spaceborne radar, volume, weight are by tightened up limit
System.The function and performance of microwave T/R component, the single function chip for being substantially all made of separation are completed both at home and abroad at present.With state
The raising of inside and outside technique and design level, more and more products and research project use multifunction chip.Multifunction chip group
Part, which is applied, all has greater advantage in tab members and conventional long strip type component, and design can be substantially reduced in tab members by applying
Difficulty improves reliability, reduces volume weight；Volume, weight and cost can be greatly reduced in general components by applying.
Using high-temperature co-fired ceramics (High-Temperature Co-fired Ceramics, contracting in microwave T/R component
Slightly word is HTCC) Mulitilayer circuit board, compared with using other Mulitilayer circuit boards, high mechanical strength, wiring density is high, chemistry
Performance is stablized, and coefficient of heat transfer is high, and the cost of material is low, and corrosion-resistant and high-temperature resistant is functional.It has had not yet to see using HTCC multilayer
The microwave T/R component of circuit substrate.
Summary of the invention
The technical problem to be solved by the present invention is to make up the defect of the above-mentioned prior art, a kind of four-way microwave T/ is provided
R component.
Technical problem of the invention is resolved by the following technical programs.
This four-way microwave T/R component is the total cavity body structure of the identical four independent channel the T/R unifications of composition,
Including four power division networks for being connected in parallel four independent channels T/R, whole component parts are all monolithic integrated microwave circuits
(Monolithic Microwave Integrated Circuit, initialism MMIC), it is integrated to be produced on same multilayer electricity
On base board, MMIC multichip interconnection is realized using multi-chip module (Multi-ChipModule, initialism MCM) technology,
Four independent channels T/R provide independent amplitude and phase control respectively, respectively include sending and receiving shared microwave device
Part.
The characteristics of this four-way microwave T/R component, is:
The microwave device is to be integrated with to send and receive six shared amplifier offset phase shifters, six attenuators, work
The multifunctional single-sheet microwave of status switch, clipping low-noise amplifier and the driver for controlling phase shift, decaying and switch
Integrated circuit (Monolithic Microwave Integrated Circuit, initialism MMIC) bare chip.Using more function
Energy chip assembly can substantially reduce design difficulty, improve reliability, reduce volume, weight and cost；
The Mulitilayer circuit board is high-temperature co-fired ceramics (High-Temperature Co-fired Ceramics, initialism
For HTCC) Mulitilayer circuit board.It is high that mechanical strength, wiring density can be improved using HTCC Mulitilayer circuit board, and chemically
It can stablize, coefficient of heat transfer is high, and the cost of material is low, and corrosion-resistant and high-temperature resistant is functional.
Technical problem of the invention is resolved by technical solution further below.
The microwave device is the model NC15318C- that No.13 Inst., Chinese Electronic Science & Technology Group Co produces
The multi-functional MMIC bare chip of 812PD.
The HTCC Mulitilayer circuit board is at least 8 layers of HTCC Mulitilayer circuit board.
Preferably, the HTCC Mulitilayer circuit board is 18 layers of HTCC Mulitilayer circuit board.
The HTCC Mulitilayer circuit board is by additional 4% ~ 8% sintering aid of 92% ~ 96% aluminium oxide ceramics in temperature 1500
DEG C ~ 1700 DEG C at be sintered made of HTCC Mulitilayer circuit board, dielectric constant be 9 ~ 9.8, the thickness of each layer of raw embryo material
For 0.025mm ~ 0.100mm, the tangent value of loss angle is 0.2% ~ 0.3%.
The surface integration control signal and power supply signal on the surface layer of the HTCC Mulitilayer circuit board to the 7th layer, the 8th layer extremely
18th layer of surface integrated micro signal, control signal and power supply signal, wherein the 9th layer of surface and the 18th layer of the back side are big
Area ground plane.Microwave transmission line by large area ground plane, metal column shield, it is ensured that microwave signal, control signal and
It is isolated between power supply signal well, it is mutually interference-free；Microwave transmission line multi-tier arrangement can significantly improve microwave T/R component
Integrated level, hence it is evident that mitigate microwave T/R component weight.
This four-way microwave T/R component further includes control chip, power module and final stage power amplifier component, circulator
Isolator assemblies, emission power modulator chip, receive power supply modulator chip, coupling systems at clipping the low noise amplifier chip
Part, that realizes microwave T/R component jointly with microwave device sends and receives function.
The control chip is the model NC2059-1C that China Electronics Technology Group Corporation No.58 Research Institute produces
Specific integrated circuit (Application Specific Integrated Circuit, initialism ASIC) bare chip,
Its function is that the data of serial input are converted to parallel data.
The power module includes the pulse power source module of DC power supplier and high-peak power, and power input is direct current
Power supply+12V and+28V, DC power supply+12V are ± 5V by DC/DC converter transform, to multi-functional MMIC bare chip, control
Chip, emission power modulator chip, receives the power supply of power supply modulator chip at clipping the low noise amplifier chip, to reduce confession
Power supply kind improves electrical transfer efficiency；DC power supply+28V is directly to final stage power amplifier assembly power supply.
The final stage power amplifier component is the model BW1164 that No.13 Inst., Chinese Electronic Science & Technology Group Co produces
Power amplifier components, function is that microwave signal is carried out to the saturation amplification of efficient power.
The circulator isolator assemblies are the models that Zhuzhou Hua Yi microwave technology Science and Technology Ltd. produces
The circulator isolator assemblies of HHW5048S, function are to complete the microwave isolation of transmission channel and receiving channel, while sending out
The reflection signal from antenna is isolated when penetrating work.
The clipping the low noise amplifier chip is the model that No.13 Inst., Chinese Electronic Science & Technology Group Co produces
For the clipping low-noise amplifier bare chip of BW2661, function is to complete the low noise amplification of receive microwave signal, is prevented simultaneously
Chip is burnt when only high-power signal inputs.
The emission power modulator chip is the model that China Electronics Technology Group Corporation No.58 Research Institute produces
For silicon based metal-Oxide-Semiconductor Field effect transistor (Metal-Oxide-Semiconductor, initialism of JS2318
For MOS) power supply modulator bare chip, function is to provide negative reference voltage, powers to the grid voltage of final stage power amplifier chip.
The power supply modulator chip that receives is the model that China Electronics Technology Group Corporation No.58 Research Institute produces
For the silicon substrate MOS power supply modulator bare chip of JS1111, function is to provide the leakage pressure power supply of clipping the low noise amplifier chip.
The coupling assembly is two rear ends day for respectively including two-in-one synthesizer, one-to-two power splitter and detecting circuit
Line unit, function are that high-power signal is carried out power combing in space again, and coupled RF signal is exported to antenna, and
And each channel needed for providing front amendment and monitoring system sends and receives width phase, monitors the transmission in one of channel
When with receiving width phase, another channel is closed, and carries out detection, the voltage signal that output detection goes out to transmission power simultaneously.
Technical problem of the invention is resolved by following further technical solution.
The cavity body structure, including cover board, peripheral frame, bottom plate and radio frequency connector and low-frequency connector altogether.
The cover board and peripheral frame are encapsulated using aluminium silicon materials, make the weight saving 20% of microwave T/R component.
The bottom plate is aluminum-base silicon carbide bottom plate, efficiently solves production and processing property, air-tightness, heat dissipation and linear expansion coefficient
The problem of matching.
The radio frequency connector, including T/R channel connector, two coupling channel connectors and the total mouth connector of radio frequency,
It is airtight SSMA radio frequency connector, and is fixed by welding with peripheral frame.
The low-frequency connector, including low frequency input connector and power input connectors are the micro- rectangle low frequencies of airproof
Connector, to guarantee the micromation of component.
The microwave T/R component is X-band T/R component, and the X-band is the frequency for meeting IEEE 521-2002 standard
For the radio waveband of the GHz of 8 GHz~12.
Compared with the prior art, the invention has the advantages that:
Structure of the invention is compact, small in size, and wiring density is high, and the cost of material is low, high mechanical strength, stable chemical performance, corrosion resistant
Erosion, high temperature resistant have the characteristics that multichannel, high-performance, high reliability, high integration, lightness, low-power consumption, thermal diffusivity are good, send out
Pulse output power >=20W is penetrated, receives noise coefficient≤3.5dB, phase shifting accuracy≤3.5 ° (root-mean-square value RMS), and can supervise
That surveys each channel T/R sends and receives width phase.Existing microwave T/R component, body are compared under conditions of identical function is with index
Long-pending and weight reduces 30% or more.It can be widely applied in airborne, carrier-borne, spaceborne phase array radar and the communications field, it is especially suitable
For in two-dimentional wide-angle scanning phased-array radar.
Detailed description of the invention
Fig. 1 is the radio frequency link figure of the specific embodiment of the invention；
Fig. 2 is the multifunction chip compositional block diagram in Fig. 1；
Fig. 3 is component parts in Fig. 1 in HTCC Mulitilayer circuit board layout.
Specific embodiment
With reference to embodiment and compares attached drawing the present invention will be described.
The X-band four-way microwave T/R component that a kind of frequency as shown in Fig. 1 ~ 3 is the GHz of 8 GHz~12 is composition phase
The total cavity body structure of the independent channel the T/R unification of same four, including four function point for being connected in parallel four independent channels T/R
Network, whole component parts are all MMIC, integrated to be produced on same Mulitilayer circuit board, realize that MMIC is more using MCM technology
Chip interconnection, four independent channels T/R provide independent amplitude and phase control respectively, respectively include sending and receiving shared
Microwave device, control chip 101, power module and final stage power amplifier component 103, circulator isolator assemblies 104, clipping
The low noise amplifier chip 106, receives power supply modulator chip, coupling assembly 105 at emission power modulator chip, with microwave
What device realized microwave T/R component jointly sends and receives function.
Microwave device is the model NC15318C-812PD that No.13 Inst., Chinese Electronic Science & Technology Group Co produces
Multi-functional MMIC bare chip 102, be integrated with send and receive six shared amplifier offset phase shifters, six attenuators,
Working condition switch, clipping low-noise amplifier and for controlling phase shift, decaying and the driver of switch.Using Multifunctional core
Piece component can substantially reduce design difficulty, improve reliability, reduce volume, weight and cost；
Mulitilayer circuit board is 18 layers of HTCC Mulitilayer circuit board.It can be improved using HTCC Mulitilayer circuit board mechanical strong
Degree, wiring density are high, and stable chemical performance, and coefficient of heat transfer is high, and the cost of material is low, and corrosion-resistant and high-temperature resistant is functional.
18 layers of HTCC Mulitilayer circuit board is sintered at 1600 DEG C of temperature by additional 6% sintering aid of 94% aluminium oxide ceramics
Form, dielectric constant 9.5, each layer of raw embryo material with a thickness of 0.1mm, the tangent value of loss angle is 0.25%；Surface layer is extremely
7th layer of surface integration control signal and power supply signal, the 8th layer to the 18th layer of surface integrated micro signal, control signal and
Power supply signal, wherein the 9th layer of surface and the 18th layer of the back side are large area ground planes.Microwave transmission line is grounded by large area
Layer, metal column shielding, it is ensured that isolation is good between microwave signal, control signal and power supply signal, mutually interference-free；It is micro-
Wave transmission line multi-tier arrangement, can significantly improve the integrated level of microwave T/R component, hence it is evident that mitigate the weight of microwave T/R component.
Control chip 101 is the model NC2059-1C that China Electronics Technology Group Corporation No.58 Research Institute produces
ASIC bare chip, function is that the data of serial input are converted to parallel data.
Power module includes the pulse power source module of DC power supplier and high-peak power, and power input is DC power supply
+ 12V and+28V, DC power supply+12V are transformed to ± 5V by DC/DC converter 107, to multi-functional MMIC bare chip 102, control
Coremaking piece 101, emission power modulator chip, receives the power supply of power supply modulator chip at clipping the low noise amplifier chip 106,
To reduce power supply kind, electrical transfer efficiency is improved；DC power supply+28V is directly to final stage power amplifier assembly power supply.
Final stage power amplifier component 103 is the model BW1164 that No.13 Inst., Chinese Electronic Science & Technology Group Co produces
Power amplifier components, function are that microwave signal is carried out to efficient power saturation amplification.
Circulator isolator assemblies 104 are the model HHW5048S that Zhuzhou Hua Yi microwave technology Science and Technology Ltd. produces
Circulator isolator assemblies, function is to complete the microwave isolation of transmission channel and receiving channel, while when emitting work
The reflection signal from antenna is isolated.
Clipping the low noise amplifier chip 106 is the model that No.13 Inst., Chinese Electronic Science & Technology Group Co produces
The clipping low-noise amplifier bare chip of BW2661, function are to complete the low noise amplification of receive microwave signal, are prevented simultaneously
High-power signal burns chip when inputting.
Emission power modulator chip is the model that China Electronics Technology Group Corporation No.58 Research Institute produces
The silicon substrate MOS power supply modulator bare chip of JS2318, function are to provide negative reference voltage, supply to the grid voltage of final stage power amplifier chip
Electricity.
Receiving power supply modulator chip is the model that China Electronics Technology Group Corporation No.58 Research Institute produces
The silicon substrate MOS power supply modulator bare chip of JS1111, function are to provide the leakage pressure power supply of clipping the low noise amplifier chip.
Coupling assembly 105 is two rear ends day for respectively including two-in-one synthesizer, one-to-two power splitter and detecting circuit
Line unit, function are that high-power signal is carried out power combing in space again, and coupled RF signal is exported to antenna, and
And each channel needed for providing front amendment and monitoring system sends and receives width phase, monitors the transmission in one of channel
When with receiving width phase, another channel is closed, and carries out detection, the voltage signal that output detection goes out to transmission power simultaneously.
The component parts of 18 layers of HTCC Mulitilayer circuit board layout in Fig. 3 is as follows:
Region 1 integrates the radio-frequency devices in each channel T/R: final stage power amplifier component 103, annular isolation device assembly 104, coupling assembly
105 and clipping the low noise amplifier chip 106；
2 integrated power supply of region modulates chip and driving chip；
3 integrated multifunction chip 102 of region and control chip 101；
Region 4 mainly includes DC/DC converter 107 and difference chip 108.
The total cavity body structure of present embodiment, including cover board, peripheral frame, bottom plate and radio frequency connector and low frequency connect
Connect device.Cover board and peripheral frame are encapsulated using aluminium silicon materials, make the weight saving 20% of microwave T/R component.Bottom plate is aluminum-base silicon carbide bottom
Plate solves the problems, such as production and processing property, air-tightness, heat dissipation and linear expansion coefficient matching.Radio frequency connector includes T/R logical
Road connector, two coupling channel connectors and the total mouth connector of radio frequency, are airtight SSMA radio frequency connectors, and by welding with
Peripheral frame is fixed.Low-frequency connector, including low frequency input connector and power input connectors are the micro- rectangle low frequency connections of airproof
Device, to guarantee the micromation of component.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Several equivalent substitute or obvious modifications are made under the premise of not departing from present inventive concept, and performance or use is identical, all should
It is considered as belonging to present invention scope of patent protection determined by the appended claims.
Claims (10)
1. a kind of four-way microwave T/R component is the total cavity body structure of the identical four independent channel the T/R unifications of composition, packet
Four power division networks for being connected in parallel four independent channels T/R are included, whole component parts are all monolithic integrated microwave circuit MMIC,
It is integrated to be produced on same Mulitilayer circuit board, MMIC multichip interconnection is realized using multi-chip module MCM technology, four are solely
The vertical channel T/R provides independent amplitude and phase control respectively, respectively includes sending and receiving shared microwave device, special
Sign is:
The microwave device is to be integrated with to send and receive six shared amplifier offset phase shifters, six attenuators, work
The multi-functional MMIC naked core of status switch, clipping low-noise amplifier and the driver for controlling phase shift, decaying and switch
Piece；
The Mulitilayer circuit board is high-temperature co-fired ceramics HTCC Mulitilayer circuit board.
2. four-way microwave T/R component as described in claim 1, it is characterised in that:
The microwave device is the model NC15318C-812PD that No.13 Inst., Chinese Electronic Science & Technology Group Co produces
Multi-functional MMIC bare chip.
3. four-way microwave T/R component as claimed in claim 1 or 2, it is characterised in that:
The HTCC Mulitilayer circuit board is at least 8 layers of HTCC Mulitilayer circuit board.
4. four-way microwave T/R component as claimed in claim 3, it is characterised in that:
The HTCC Mulitilayer circuit board is 18 layers of HTCC Mulitilayer circuit board.
5. four-way microwave T/R component as claimed in claim 4, it is characterised in that:
The HTCC Mulitilayer circuit board be by additional 4% ~ 8% sintering aid of 92% ~ 96% aluminium oxide ceramics 1500 DEG C of temperature ~
HTCC Mulitilayer circuit board made of being sintered at 1700 DEG C, dielectric constant are 9 ~ 9.8, each layer of raw embryo material with a thickness of
0.025mm ~ 0.100mm, the tangent value of loss angle are 0.2% ~ 0.3%；
The surface integration control signal and power supply signal on the surface layer of the HTCC Mulitilayer circuit board to the 7th layer, the 8th layer to the 18th
Surface integrated micro signal, control signal and the power supply signal of layer, wherein the 9th layer of surface and the 18th layer of the back side are large area
Ground plane.
6. four-way microwave T/R component as described in claim 1, it is characterised in that:
It further include drive control chip, power module and final stage power amplifier component, circulator isolator assemblies, clipping low noise
Amplifier chip, receives power supply modulator chip, coupling assembly at emission power modulator chip.
7. four-way microwave T/R component as claimed in claim 6, it is characterised in that:
The control chip is the special of the model NC2059-1C that China Electronics Technology Group Corporation No.58 Research Institute produces
With integrated circuit ASIC bare chip；
The power module includes the pulse power source module of DC power supplier and high-peak power；
The final stage power amplifier component is the function for the model BW1164 that No.13 Inst., Chinese Electronic Science & Technology Group Co produces
Put component；
The circulator isolator assemblies are the model HHW5048S that Zhuzhou Hua Yi microwave technology Science and Technology Ltd. produces
Circulator isolator assemblies；
The clipping the low noise amplifier chip is the model that No.13 Inst., Chinese Electronic Science & Technology Group Co produces
The clipping low-noise amplifier bare chip of BW2661；
The emission power modulator chip is the model that China Electronics Technology Group Corporation No.58 Research Institute produces
The silicon substrate MOS power supply modulator bare chip of JS2318；
The power supply modulator chip that receives is the model that China Electronics Technology Group Corporation No.58 Research Institute produces
The silicon substrate MOS power supply modulator bare chip of JS1111；
The coupling assembly is two rear end antenna lists for respectively including two-in-one synthesizer, one-to-two power splitter and detecting circuit
Member.
8. four-way microwave T/R component as described in claim 1, it is characterised in that:
The cavity body structure, including cover board, peripheral frame, bottom plate and radio frequency connector and low-frequency connector altogether.
9. four-way microwave T/R component as claimed in claim 8, it is characterised in that:
The cover board and peripheral frame are encapsulated using aluminium silicon materials；
The bottom plate is aluminum-base silicon carbide bottom plate；
The radio frequency connector, including T/R channel connector, two coupling channel connectors and the total mouth connector of radio frequency, are gas
Close SSMA radio frequency connector, and fixed by welding with peripheral frame；
The low-frequency connector, including low frequency input connector and power input connectors are the micro- rectangle low frequency connections of airproof
Device.
10. four-way microwave T/R component as described in claim 1, it is characterised in that:
The microwave T/R component is X-band T/R component, and the X-band is that meet the frequency of IEEE 521-2002 standard be 8
The radio waveband of the GHz of GHz~12.
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| CN201811144572.1A CN109239672A (en) | 2018-09-29 | 2018-09-29 | A kind of four-way microwave T/R component |
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| CN201811144572.1A CN109239672A (en) | 2018-09-29 | 2018-09-29 | A kind of four-way microwave T/R component |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110161467A (en) * | 2019-05-31 | 2019-08-23 | 南京吉凯微波技术有限公司 | A kind of Ku wave band four-way microwave T/R component |
| CN110277970A (en) * | 2019-06-18 | 2019-09-24 | 上海航天电子通讯设备研究所 | A kind of X-band T/R component that output power is changeable |
| CN110808745A (en) * | 2019-09-16 | 2020-02-18 | 上海航天测控通信研究所 | Dual-channel transmitting assembly for phased array antenna of carrier rocket relay user terminal |
| CN111025235A (en) * | 2019-12-16 | 2020-04-17 | 南京吉凯微波技术有限公司 | Microwave TR assembly with ultra-wide working bandwidth |
| CN111044976A (en) * | 2019-12-24 | 2020-04-21 | 南京吉凯微波技术有限公司 | Phased array radar active sub-array system based on high integration level and high reliability |
| CN111103569A (en) * | 2019-12-19 | 2020-05-05 | 南京吉凯微波技术有限公司 | Satellite-borne active phased array four-channel microwave TR component capable of self-heating |
| CN111123207A (en) * | 2019-12-19 | 2020-05-08 | 北京无线电测量研究所 | TR subassembly control circuit based on full bare chip |
| CN112202463A (en) * | 2020-09-30 | 2021-01-08 | 中国科学院空天信息创新研究院 | Multi-channel microwave assembly |
| CN112564730A (en) * | 2020-11-13 | 2021-03-26 | 北京遥测技术研究所 | High-reliability multi-output power TR assembly with flexible design |
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| CN112202463A (en) * | 2020-09-30 | 2021-01-08 | 中国科学院空天信息创新研究院 | Multi-channel microwave assembly |
| CN112564730A (en) * | 2020-11-13 | 2021-03-26 | 北京遥测技术研究所 | High-reliability multi-output power TR assembly with flexible design |
| CN113093117A (en) * | 2021-06-03 | 2021-07-09 | 成都雷电微晶科技有限公司 | Millimeter wave single-channel control TR component |
| CN114597627A (en) * | 2022-02-21 | 2022-06-07 | 北京遥感设备研究所 | High-power-density integrated active phased-array antenna micro-system |
| CN117526992A (en) * | 2024-01-04 | 2024-02-06 | 中科海高(成都)电子技术有限公司 | Radio frequency receiving and transmitting circuit, radio frequency front-end module and electronic equipment |
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