CN213365012U

CN213365012U - Miniaturized four passageway TR subassemblies in X wave band

Info

Publication number: CN213365012U
Application number: CN202022165659.6U
Authority: CN
Inventors: 孙伟; 唐进; 刘刚; 王腾飞
Original assignee: CETC 43 Research Institute
Current assignee: CETC 43 Research Institute
Priority date: 2020-09-25
Filing date: 2020-09-25
Publication date: 2021-06-04
Anticipated expiration: 2030-09-25

Abstract

The utility model discloses a miniaturized four-channel TR component of X wave band in the microwave field, including the cavity structure that is formed by the welding of apron and metal casing, be equipped with four independent and the same receiving and dispatching passageways in the cavity structure, every receiving and dispatching passageway all includes transmission branch road and receiving branch road through circulator isolation, and the transmission branch road and receiving branch road in each receiving and dispatching passageway switch the receiving and dispatching state through multi-functional chip, and each multi-functional chip all divides the ware with one divide four merit to be connected; each receiving and transmitting channel comprises a receiving and transmitting channel micro-strip plate and a transition zone micro-strip plate, and the one-to-four power divider comprises a power divider micro-strip plate; the transceiver channel microstrip plate and the power divider microstrip plate are both multilayer LTCC circuit substrates; the utility model discloses a multilayer LTCC circuit substrate is showing the integrated level that has improved the TR subassembly. The size and weight can be greatly reduced by properly increasing the number of layers of the multilayer LTCC circuit substrate, and high performance can be realized by selecting a chip and reasonably designing and distributing.

Description

Miniaturized four passageway TR subassemblies in X wave band

Technical Field

The utility model relates to a microwave field specifically is a miniaturized X wave band four-channel TR subassembly.

Background

As the performance requirements of radar are higher and higher, the performance requirements of microwave components are also increasing. The phase control technology meets the requirements of high performance and high viability required by modern radars, and simultaneously reduces the development and production cost of the radars; as a mainstream technology of the current radar, the active phased array radar technology has the advantages of flexibility and adaptability of antenna beams, and is more and more emphasized by researchers.

The T/R component is used as a key component of the phased array radar, and the performance of the T/R component directly influences the performance of the whole radar. With the continuous improvement of the technical level, the market puts higher requirements on the aspects of volume, performance, reliability and the like of the T/R assembly, and particularly the requirements of a carrier-based radar system and an airborne radar system on the volume and the energy consumption of the T/R assembly are extremely strict; the realization of the miniaturized and high-performance T/R component has very important practical significance.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a miniaturized X wave band four-channel TR subassembly to solve the problem that proposes in the above-mentioned background art.

In order to achieve the above object, the utility model provides a following technical scheme:

a miniaturized X-band four-channel TR component comprises a cavity structure formed by welding a cover plate and a metal shell, wherein four independent and same transceiving channels are arranged in the cavity structure, each transceiving channel comprises a transmitting branch and a receiving branch which are isolated by a circulator, the transmitting branch and the receiving branch in each transceiving channel are switched to be in a transceiving state by a multifunctional chip, and each multifunctional chip is connected with a one-to-four power divider; each receiving and transmitting channel comprises a receiving and transmitting channel microstrip plate and a transition zone microstrip plate, and the one-to-four power divider comprises a power divider microstrip plate; the transceiver channel microstrip plate and the power divider microstrip plate are both multilayer LTCC circuit substrates; the transition zone microstrip plate, the transceiving channel microstrip plate and the power divider microstrip plate are connected by lead bonding, and the transceiving channel microstrip plate is welded at the bottom of the metal shell.

As an improved scheme of the utility model, the transceiver channel microstrip plate and the power divider microstrip plate are made of FerroA6M material, and the dielectric constant Er is 5.9; the transition zone microstrip plate adopts a Rogers 6002 double-sided plate, and the dielectric constant Er is 2.94.

As the improvement scheme of the utility model, the transmitting branch comprises a preceding stage driving amplifier, an attenuator and a final stage power amplifier which are connected in sequence, wherein the final stage power amplifier is connected with the circulator, and the preceding stage driving amplifier is connected with the multifunctional chip; the receiving branch comprises an amplitude limiter and a low-noise amplifier, the low-noise amplifier is connected with the multifunctional chip, and the amplitude limiter is connected with the circulator.

As the improvement of the utility model, the limiter model is NC1810C-812, the low noise amplifier model is NC10146C-812, the preceding stage drive amplifier model is WFD090102-P19, the last stage power amplifier model is WFD090102-P4, the attenuator model is NC1338C-120F, the circulator model is WGH9007E, and the multi-functional chip model is WND0010 HM.

As the improvement scheme of the utility model, each receiving and dispatching channel is provided with an interface circuit, and the interface circuit comprises a differential 422-to-TTL circuit, a serial data-to-parallel data circuit, a receiving power switch modulation circuit, a transmitting power switch modulation circuit and a negative voltage level conversion circuit; the difference 422 changes TTL circuit and adopts the multichannel difference transceiver chip that the model is SJ001X, serial data changes parallel data circuit and adopts the wave control chip that the model is JS337, receive power switch modulation circuit and adopt the power modulator that the model is JS1146, transmission power switch modulation circuit adopts the switch driver that the model is JS3287, negative pressure level conversion circuit adopts the negative pressure conversion chip that the model is JS 2308.

As the improvement of the utility model, the power divider microstrip board is connected with the low frequency connector through the wire bonding, still is connected with the terminal of a plurality of radio frequency connectors through the soldering, the low frequency connector model is the miniature rectangular connector J30JM1-37ZKS-Q25 of J30J, the radio frequency connector model is coaxial radio frequency connector JSMA (M) -FJFD 5150.

Has the advantages that: the utility model discloses a multilayer LTCC circuit substrate can distribute various control signal in each layer, connects the transmission signal through the blind hole between each layer, is showing the integrated level that has improved the TR subassembly. By properly increasing the number of layers of the microstrip plate of the transmitting-receiving channel and the microstrip plate of the transition band, the size and the weight of a TR component can be greatly reduced, and by selecting a chip and reasonably designing and arranging, high performance can be realized.

Drawings

FIG. 1 is a functional block diagram of the present invention;

FIG. 2 is a block diagram of the single receive branch of the present invention;

FIG. 3 is a block diagram of the single transmit branch of the present invention;

FIG. 4 is a schematic diagram of a single transmit/receive channel circuit of the present invention;

FIG. 5 is a simulated topology of the four power splitter of the present invention;

FIG. 6 is a simulation curve of amplitude consistency of a four-power divider;

fig. 7 is a phase consistency simulation curve of a four-power divider;

fig. 8 is a schematic diagram of an interface circuit of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

As shown in fig. 1-3, a miniaturized X-band four-channel TR assembly includes a cavity structure formed by welding a cover plate and a metal shell, four independent and identical transceiving channels are provided in the cavity structure, each transceiving channel includes a transmitting branch and a receiving branch isolated by a circulator, the transmitting branch and the receiving branch in each transceiving channel switch a transceiving state through a multifunctional chip, and each multifunctional chip is connected with a one-to-four power divider.

Specifically, the one-to-four power divider is realized by adopting microstrip power division, and has the functions of synthesizing four paths of echo signals into one path during a receiving period and dividing one path of excitation signal into four paths during a transmitting period; in order to obtain a high degree of uniformity in the amplitude phase between the four branches of the power divider.

Each receiving and transmitting channel comprises a receiving and transmitting channel microstrip plate and a transition zone microstrip plate, the one-to-four power divider comprises a power divider microstrip plate, and the single TR component comprises four receiving and transmitting channel microstrip plates, four transition zone microstrip plates and one power divider microstrip plate. Specific simulated topological graphs and simulated curves are shown in fig. 5-7. According to simulation results, the amplitude consistency among the four channels is within 0.2dB, and the phase consistency is within 2 degrees.

The microstrip board of the receiving and transmitting channel and the microstrip board of the power divider are all multilayer LTCC circuit substrates, various control signals can be distributed on each layer by adopting the design scheme of the multilayer board, signals are transmitted through blind holes between each layer, and the integration level of the TR component is remarkably improved. By properly increasing the number of layers of the microstrip plate of the transmitting/receiving channel and the microstrip plate of the transition band, the size and the weight of the TR module can be greatly reduced. And high performance can be realized by selecting a chip and reasonably designing and distributing.

Specifically, the transceiver channel microstrip board comprises a low noise amplifier, a multifunctional chip, a pre-driver amplifier, a fixed attenuator, a power modulator, a driver and a negative voltage conversion chip, and has the functions of realizing radio frequency transmission of the transceiver channel and transmitting various control signals. In order to meet the requirement of assembly reliability, the transceiver channel microstrip board is an 8-layer multi-layer LTCC circuit substrate (top layer, MID2, MID3, MID4, MID7, MID8, MID9 and bottom layer), and FerrooA 6M material is adopted, the single-layer board is designed to have the thickness of 0.096mm, and the dielectric constant Er is 5.9. The micro-strip plate of the receiving and transmitting channel is welded at the bottom inside the metal shell by adopting a soldering technology, and is connected with the transition micro-strip plate at the front end and the power divider micro-strip plate at the rear end by adopting a lead bonding technology, so that the interconnection of a radio frequency signal and a low-frequency control signal is realized.

The top layer is used for designing radio frequency routing, chip grounding bonding pads and gold wire bonding pads, and the MID2 is a large-area grounding layer. According to the impedance calculation method of the microstrip board, the thickness from the top layer to the first grounding layer is 0.096mm x 2+0.012mm, wherein 0.012mm is the thickness of the top layer gold-plating layer, the dielectric constant is 5.9, and the width of the 50 ohm impedance line is calculated to be 0.32mm by introducing the simulation software. The MID3 is control signal wiring and local ground layer, the MID4 is power supply modulation and negative voltage conversion wiring layer, the MID7 is power supply wiring and local ground, the MID8 and the MID9 are power supply control wiring layers, and the bottom layer is large-area ground layer. In order to reduce the volume, a current limiting resistor with series connection of control signals is placed on the MID3 and MID4 layers in a buried resistor mode, the resistance value is 1K square resistor paste, and the whole plate thickness is designed to be 0.8 mm.

The transition belt microstrip board is used for connecting the SMA connector and the circulator, a ROGERS 6002 double-sided board is adopted, the thickness is 0.254mm, the dielectric constant Er is 2.94, according to calculation, in the working frequency band of the TR component, the 50-ohm line width is 0.64mm, and the line width can be matched with the input microstrip line width of the circulator. The transition belt micro-strip plate is not provided with a chip, the main function is signal transition, the SMA connector is welded on the metal shell by adopting a soldering technology, and a terminal of the SMA connector extends into the cavity and is connected with the transition belt micro-strip plate by adopting the soldering technology.

The power divider microstrip board is also a multilayer LTCC circuit substrate and adopts FerrooA 6M material, the design thickness of the single-layer board is 0.096mm, and the dielectric constant Er is 5.9. Similar to the microstrip board of the transceiver channel, the MID1, MID2 and MID3 of the microstrip board of the power divider are blank layers, the top layer (MID1) mainly designs radio frequency wiring, chip grounding bonding pads and gold wire bonding pads, the MID4 is a large-area grounding layer, according to the impedance calculation method of the microstrip board, the thickness from the top layer to the first grounding layer (MID4) is 0.096mm 4+0.012mm, wherein 0.012mm is the thickness of the top layer gold-plated layer, the dielectric constant is 5.9 and is introduced into simulation software, the width of 50 ohm impedance line is calculated to be 0.6mm, the MID5 power supply wiring layer, the MID6 and MID7 are control signal wiring layers, and the bottom layer is a large-area grounding layer.

In addition, the power divider microstrip board is connected with a low-frequency connector through lead bonding, is also provided with interfaces of a plurality of radio-frequency connectors, and is connected with terminals of the plurality of radio-frequency connectors through soldering, so that the transmission of radio-frequency signals and low-frequency control signals is realized. The low frequency connector is model J30JM1-37ZKS-Q25 as a miniature rectangular connector of J30J, and the radio frequency connector is model JSMA (M) -FJFD5150 as a coaxial radio frequency connector.

The radio frequency connector and the power control connector are welded on the metal shell through low-temperature soldering tin, the radio frequency connector, the power divider microstrip plate and the transition strip microstrip plate are interconnected through normal-temperature soldering tin, and the power control connector is interconnected through a gold wire bonding technology. After the TR component is debugged to be qualified, the TR component is placed in a cavity structure formed by welding the cover plate and the metal shell, the cavity structure forms an airtight space, a bare chip can be prevented from being exposed in the air, and the reliability of the component is improved.

Specifically, the transmitting branch comprises a preceding stage driving amplifier, an attenuator and a final stage power amplifier which are connected in sequence, wherein the final stage power amplifier is connected with the circulator, and the preceding stage driving amplifier is connected with the multifunctional chip; the receiving branch comprises an amplitude limiter and a low-noise amplifier, the low-noise amplifier is connected with the multifunctional chip, and the amplitude limiter is connected with the circulator.

The key devices in the T/R component adopt bare chips, wherein high-power chips such as an amplitude limiter and a final-stage power amplifier are welded on a molybdenum-copper substrate by adopting gold tin, the rest low-power chips such as a low-noise amplifier and a multifunctional chip are adhered on an LTCC substrate (a transceiver channel micro-strip plate and a power divider micro-strip plate) by adopting conductive adhesive, and the interconnection between the chips and the micro-strip plate adopt a gold wire bonding technology, so that the integration level is improved, and the size of the component is reduced.

As shown in fig. 4, the TR component is a module at the frontmost end of the radar receiving channel, and the noise coefficient index of the receiving branch directly affects the minimum sensitivity of the receiving system, so that in the receiving channel, the number of limiters may be NC1810C-812, the insertion loss is 0.4dB, the input power is 10W continuous waves, and the output limiting level is less than +15dBm, which is used to prevent the rear-end lna from being damaged due to excessive synchronous or asynchronous interference power. The low noise amplifier model can be NC10146C-812, the noise coefficient of the amplifier is 1.3dB, and the gain is 27 dB.

The model of the front-stage drive amplifier can be WFD090102-P19, the power gain of the front-stage drive amplifier is 13dB, the saturation output power is +20dBm, and the front-stage drive amplifier is used for performing saturation amplification on an input excitation signal so as to meet the input power requirement of a final-stage power amplifier. The final power amplifier model may be WFD090102-P41, with a saturated output power of +41 dBm. The attenuator is a 3dB fixed attenuator, the model can be NC1338C-120F, and the attenuator has the functions of improving standing waves between two stages of amplifiers and avoiding self excitation caused by standing wave reflection; secondly, the input excitation of the final power amplifier can be properly adjusted, and the influence on the performance caused by the deep saturation due to the overlarge excitation is prevented.

The circulator can be WGH9007E in model number, and is used for realizing transceiving isolation, and the transceiving isolation degree can be 20 dB. The multifunctional chip is used for realizing functions of transceiving switching, receiving/transmitting branch amplification, numerical control phase shifting, numerical control attenuation and the like, and the type of the multifunctional chip can be WND0010 HM.

Specifically, the 3 pin of the circulator W1 is connected to one end of the limiter Z1, the other end of the limiter Z1 is connected to the 1 pin (RFIN terminal) of the low noise amplifier L14, the 2 pin of the low noise amplifier L14 is connected to the 2 pin (RFIN terminal) of the multifunctional chip L19, and the Vdd terminal is connected to the CHNI-TRRO2 and connected to the filter capacitor. The 2-pin of the circulator W1 is connected to the Coupled, and the 1-pin is connected to the 2-pin (RFOUT terminal) of the final power amplifier L18. The

pins

4, 5, 6, 8, 9 and 10 of the final power amplifier L18 are connected with CHNI- +8Vdd in common, and a capacitor is connected to the ground; the 3 and 7 pins of the final power amplifier L18 are connected with CHNI-0.6V together, and are connected with a capacitor to the ground; the 1 pin (RFIN terminal) of the final power amplifier L18 is connected to one end of the attenuator N5, the other end of the attenuator N5 is connected to the 2 pin (RFOUT terminal) of the pre-driver L16, the Vdd terminal of the pre-driver L16 is connected to CHNI- +8Vdd, and the 1 pin (RFIN terminal) is connected to the 3 pin (Tout terminal) of the multi-function chip L19.

Further, as shown in fig. 8, each transceiver channel is provided with an interface circuit, and the interface circuit includes a differential 422 to TTL circuit, a serial data to parallel data circuit, a receiving power switch modulation circuit, a transmitting power switch modulation circuit, and a negative voltage level conversion circuit. The interface circuits in the single transceiving channel and the interface circuits between the four transceiving channels are independent and isolated from each other, so that mutual crosstalk of signals among the channels is avoided.

The differential 422-to-TTL circuit adopts a multi-path differential transceiver chip with the model of SJ001X and is used for converting a differential 422 interface of data control lines such as SD, End and SC, the multi-path differential transceiver chip with the model comprises 8 paths of differential-to-TTL receivers, the use requirement of a TR component in the embodiment can be met, and meanwhile, the multi-path differential transceiver chip with the model also comprises one path of TTL differential-to-TTL driver, so that the output conversion of the component BITE for feeding back SD _ O can be realized.

The serial data to parallel data circuit adopts a wave control chip with the model of JS 337. According to the wave control protocol, the system sends 128 bits of data to the T/R component over the SD data line. The T/R component comprises four channels, each channel is 32 bits of data, and therefore serial data is converted into parallel data through a wave control chip on each channel.

The wave control chip of the type has the following functions: the method converts 32-bit serial input data (SDIN) into parallel data and has the functions of data verification, data secondary latching, data selection output and the like; generating control signals according to the TRR and the TRT and sending the control signals to the multifunctional chip to realize the receiving and sending switching control; generating 6-bit shift phase codes and 6 as attenuation codes and sending the attenuation codes to a multi-functional chip to realize numerical control phase shift and numerical control attenuation; generating TRT _ O and TRR _ O signals to realize the modulation of the receiving power supply and the modulation of the transmitting power supply; and performing power failure detection and error checking detection SD _ O fault on the abnormity of the positive and negative power supplies, and outputting fault indication.

The receiving power switch modulation circuit adopts a power modulator with model JS1146, which is mainly used for reducing the power consumption of a TR component, improving the isolation between receiving and transmitting, realizing the functions that each chip of a receiving branch circuit is powered on, each chip of a transmitting branch circuit is not powered on in a receiving time sequence, and each chip of the transmitting branch circuit is powered on and each chip of the receiving branch circuit is not powered on in a transmitting time sequence, thereby modulating the receiving time sequence TRR of a receiving power. The power supply modulator can modulate input direct current +5V into a pulse power supply +5V according to TRR, the driving current is 100mA, the current required by the low-noise amplifier is 45mA, and the requirement is met.

Similar to the reception power switch modulation circuit, the transmission power switch modulation circuit employs a switch driver of model JS3287 for modulation according to the transmission timing sequence TRT. The switch driver of the model modulates input direct current +8V into a pulse power supply +8V according to TRT, and enables the pulse power supply to be output to an MOS tube SC803X so as to realize high-current power supply modulation, the MOS tube SC803X is a high-current P-channel VDMOS tube, the switch on resistance is 0.08 ohm, the output current is 10A, the current of a front-stage drive amplifier is 70mA, the current of a final-stage power amplifier is about 3A, and the drive current of the MOS tube meets the use requirement.

The grid voltage of the final power amplifier is-0.6V, the power supply input by the system is-5V, so that negative voltage needs to be converted, the negative voltage level conversion circuit adopts a negative voltage conversion chip with the model number of JS2308, and the chip can convert the input voltage of-5V into-0.5V to-0.9V, so that the use requirement is met.

Although the present description is described in terms of embodiments, not every embodiment includes only a single embodiment, and such description is for clarity only, and those skilled in the art should be able to integrate the description as a whole, and the embodiments can be appropriately combined to form other embodiments as will be understood by those skilled in the art.

In the description of the present invention, it is noted that relational terms such as first and second, and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

In the description of the present invention, it should be further noted that the terms "upper", "lower", "inner", "outer", and the like indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship which is usually placed when the products of the present invention are used, and are only for convenience of description and simplification of the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.

In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Therefore, the above description is only a preferred embodiment of the present application, and is not intended to limit the scope of the present application; all changes which come within the meaning and range of equivalency of the claims are to be embraced within their scope.

Claims

1. A miniaturized X-band four-channel TR component comprises a cavity structure formed by welding a cover plate and a metal shell, wherein four independent and same transceiving channels are arranged in the cavity structure;

each receiving and transmitting channel comprises a receiving and transmitting channel microstrip plate and a transition zone microstrip plate, and the one-to-four power divider comprises a power divider microstrip plate; the transceiver channel microstrip plate and the power divider microstrip plate are both multilayer LTCC circuit substrates; the transition zone microstrip plate, the transceiving channel microstrip plate and the power divider microstrip plate are connected by lead bonding, and the transceiving channel microstrip plate is welded at the bottom of the metal shell.

2. The miniaturized X-band four-channel TR assembly of claim 1, wherein the transceiver and power divider microstrip plates are made of FerroA6M material, and have a dielectric constant Er of 5.9; the transition zone microstrip plate adopts a Rogers 6002 double-sided plate, and the dielectric constant Er is 2.94.

3. A miniaturized X-band quad-channel TR package as claimed in claim 2, wherein said transmitting branch comprises a pre-driver amplifier, an attenuator and a final power amplifier connected in sequence, wherein the final power amplifier is connected to the circulator, the pre-driver amplifier is connected to the multi-function chip; the receiving branch comprises an amplitude limiter and a low-noise amplifier, the low-noise amplifier is connected with the multifunctional chip, and the amplitude limiter is connected with the circulator.

4. A miniaturized X-band four-channel TR package as claimed in claim 3, wherein said limiter model is NC1810C-812, said low noise amplifier model is NC10146C-812, said pre-driver amplifier model is WFD090102-P19, said final power amplifier model is WFD090102-P4, said attenuator model is NC1338C-120F, circulator model is WGH9007E, and said multi-function chip model is WND0010 HM.

5. The miniaturized X-band quad-channel TR package of claim 1, wherein each transceiver channel is configured with interface circuits, said interface circuits comprising differential 422 to TTL circuits, serial data to parallel data circuits, receive power switch modulation circuits, transmit power switch modulation circuits, and negative voltage level shifting circuits; the difference 422 changes TTL circuit and adopts the multichannel difference transceiver chip that the model is SJ001X, serial data changes parallel data circuit and adopts the wave control chip that the model is JS337, receive power switch modulation circuit and adopt the power modulator that the model is JS1146, transmission power switch modulation circuit adopts the switch driver that the model is JS3287, negative pressure level conversion circuit adopts the negative pressure conversion chip that the model is JS 2308.

6. A miniaturized X-band four-channel TR assembly as claimed in claim 2, wherein said power splitter microstrip board has a low frequency connector, model J30J micro rectangular connector J30JM1-37ZKS-Q25, connected thereto by wire bonding and connected thereto by soldering to terminals of a plurality of rf connectors, model jssma (m) -FJFD 5150.