CN114284258A - Ultrahigh-integration multi-channel parallel photoelectric conversion assembly - Google Patents
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- CN114284258A CN114284258A CN202111445235.8A CN202111445235A CN114284258A CN 114284258 A CN114284258 A CN 114284258A CN 202111445235 A CN202111445235 A CN 202111445235A CN 114284258 A CN114284258 A CN 114284258A
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Abstract
The invention relates to an ultrahigh integrated multi-channel parallel photoelectric conversion assembly, which comprises an outer shell, a power supply protection circuit board, a power supply wiring board and a plurality of integrated cavities, wherein the power supply protection circuit board, the power supply wiring board and the integrated cavities are arranged in the outer shell; in each integrated cavity, the detector chip is connected with the optical coupling system at the top of the cavity, and the radio frequency adjustable attenuator is connected with the SSMP connector arranged at the bottom of the cavity; the radio frequency amplifier is arranged between the detector chip and the radio frequency adjustable attenuator; the detector chip is connected with the radio frequency amplifier, the radio frequency amplifier is connected with the radio frequency adjustable attenuator, and the radio frequency adjustable attenuator is connected with the SSMP connector through microstrip lines. The invention combines the advantages of high bandwidth, low loss, interference resistance and the like of microwave light, adopts the micro-assembly technology to mix and integrate the detector, the amplifier and the attenuator in multiple paths, and has the characteristics of microminiaturization, high integration degree, adjustable attenuation, high reliability and the like.
Description
Technical Field
The invention relates to the technical field of photoelectric conversion, in particular to an ultrahigh-integration multi-channel parallel photoelectric conversion assembly.
Background
Radio frequency optical transmission is one of important applications of microwave photonics, and with the rapid development of microwave communication and optical Fiber communication, microwave communication has defects in long-distance transmission and large-capacity transmission, which facilitates an optical Fiber transmission technology of microwave signals, i.e., Radio Over Fiber (ROF) technology. The microwave optical transmission technology has the advantages of low loss, large bandwidth, light weight, interference resistance, wavelength division multiplexing and the like, and effectively overcomes the defects of microwave communication. However, low cost, high performance and arraying have become one of the technological bottlenecks that limit microwave photonic applications.
The current technical defects in the ROF technology are mainly as follows:
1) at present, the microwave signal optical transmission technology is still realized based on discrete devices, and the integration is extremely low, so that the potential advantages of the whole system in the aspects of comprehensive performance level, volume, weight, power consumption, cost and the like are difficult to exert, and the application requirements of the rapidly developed optical transmission technology cannot be met;
2) the isolation is poor during multi-path integration, the requirements on volume, quality and isolation in the fields of electronic countermeasure, radar communication and the like are high, and the requirement on high isolation cannot be met when a plurality of photoelectric detectors and radio frequency amplifiers are integrated in a small space;
3) poor reliability and performance indexes: the microwave signal light transmission is realized by adopting the prior art, the hardware difficulty is high, the structural form is complex, and the interconnection difficulty of a plurality of devices is high, so that the reliability of the whole system is reduced. In addition, link indexes are poor based on discrete devices, for example, the flatness in a band of 0.8-18 GHz is generally +/-3 dB.
Disclosure of Invention
In order to solve the problems of microwave light transmission in the field of optical communication, the invention provides an ultrahigh-integration multi-channel parallel photoelectric conversion assembly, which combines the advantages of microwave communication and optical communication and adopts a micro-assembly technology to realize multi-channel hybrid integration of a radio-frequency photoelectric detector, a radio-frequency amplifier and an adjustable attenuator so as to realize the functions of photoelectric conversion, radio-frequency signal processing and the like of modulated optical signals.
The invention is realized through the following technical scheme, according to the ultrahigh-integration multipath parallel photoelectric conversion assembly provided by the invention, the ultrahigh-integration multipath parallel photoelectric conversion assembly comprises an outer shell, a power supply protection circuit board arranged in the outer shell, and a power supply wiring board connected with the power supply protection circuit board, and the photoelectric conversion assembly further comprises a plurality of integration cavities which are connected with the power supply wiring board; a detector chip, a radio frequency amplifier and a radio frequency adjustable attenuator are arranged in each integrated cavity; in each integrated cavity, a detector chip is connected with an optical coupling system at the top of the cavity, a radio frequency adjustable attenuator is connected with an SSMP connector arranged at the bottom of the cavity, and a radio frequency amplifier is arranged between the detector chip and the radio frequency adjustable attenuator; the detector chip is connected with the radio frequency amplifier, the radio frequency amplifier is connected with the radio frequency adjustable attenuator, and the radio frequency adjustable attenuator is connected with the SSMP connector through microstrip lines.
Furthermore, the detector chip is fixed on a ceramic substrate, and the ceramic substrate is fixed in the cavity; the power supply end of the detector chip is connected with a conical inductor, a T-shaped network circuit is further integrated on the ceramic substrate, the detector chip is connected with the microstrip line through the T-shaped network circuit, the output impedance of the detector chip is lowered through the T-shaped network circuit, the effect of 50 omega matching is achieved, and the flatness of the photoelectric conversion assembly and the isolation between the multiple channels are improved through the conical inductor.
Furthermore, the microstrip line and the T-shaped network circuit on the ceramic substrate, the microstrip line and the microstrip line, the microstrip line and the radio frequency amplifier, and the microstrip line and the radio frequency adjustable attenuator are interconnected in a gold wire bonding mode.
Furthermore, the microstrip line is connected with the central conductor of the SSMP connector in a mode of coating a gold strip by resistance welding, and the channel gain of the radio frequency amplifier can be ensured to be 15dB through the measures, and the flatness in the band of 0.8-18 GHz is less than or equal to +/-1 dB.
Furthermore, the microstrip line is a 50-ohm transmission line, the loss is minimum when the transmission impedance of the radio-frequency signal is 50 ohms, the output impedance of the detector chip is reduced to 50 ohms through the T-shaped network circuit, and then the radio-frequency photoelectric detector, the radio-frequency amplifier and the radio-frequency adjustable attenuator which are different in type can be integrated in a packaging cavity with a specific structure through the connection of the 50-ohm microstrip line, so that the ultrahigh-integration photoelectric system is realized.
Furthermore, the radio frequency amplifier is fixed on a tungsten copper gasket, the tungsten copper gasket is fixed in the cavity, and the tungsten copper gasket is used for meeting the requirements of product heat dissipation and expansion coefficient and improving the reliability of the product at high and low temperatures.
Furthermore, the optical coupling system adopts a single fiber form, a 42-degree inclined plane is arranged at the coupling position of the optical fiber and the detector chip, and the optical signal is totally reflected to a photosensitive surface of the detector through the 42-degree optical fiber inclined plane; after the coupling of the multiple detector chips is completed, the multiple optical fibers are combined into an AMT connector through a ribbon combining process.
Furthermore, each cavity is sealed with a small cover plate, the small cover plate is made of copper, the shielding effect and the skin effect of copper on radio frequency signals are utilized, the isolation index can be improved to a great extent, the channel isolation of products is improved, and the in-band isolation of 0.8-18 GHz is more than or equal to 65 dBc.
Furthermore, the in-band isolation of the photoelectric conversion component is more than or equal to 65dBc at 0.8-18 GHz, the in-band flatness of the photoelectric conversion component is more than or equal to +/-1 dB at 0.8-18 GHz, and the channel gain of the radio frequency amplifier is 15 dB.
The invention has the beneficial technical effects that:
(1) the invention adopts the ultra-high integrated micro-assembly technology, and integrates different types of radio frequency photoelectric detectors, radio frequency amplifiers and radio frequency adjustable attenuators into a special structure packaging cavity for the first time by pulling down the output impedance of a detector chip through impedance matching, thereby realizing the ultra-high integrated photoelectric system.
(2) Through electromagnetic field simulation of ADS and HFSS, a cavity with a proper size is designed for each channel, a small cover plate of the cavity is creatively designed by utilizing the shielding effect and the skin effect of copper on radio frequency signals, and the channel isolation degree of a product is improved to a great extent. The isolation of the integrated product in the current market at 0.8-18 GHz is about 45dBc, and the isolation of the integrated product can reach more than 65 dBc.
(3) The performance of microwave signals, an optical system and an optical transmission link is ensured through optical simulation of ZMAX, OptiSystemm and the like, so that the optical coupling efficiency and the flatness meet the design requirements of products, a PIN photoelectric chip (a detector chip), a radio frequency amplifier and a radio frequency adjustable attenuator are integrated in one package, and the functions of demodulation of microwave light and processing of radio frequency signals are completed.
(4) Through system modeling and software simulation, the functions of photoelectric conversion, radio frequency amplification, radio frequency adjustable attenuation and the like of 0.8-18 GHz ultra-bandwidth microwave radio-frequency signals are guaranteed to be realized, meanwhile, the interface interconnection is reduced, the system structure difficulty is reduced, and the reliability and performance indexes of the system are improved to a great extent, for example, in a 0.8-18 GHz photoelectric system based on discrete devices, the flatness in the system is generally +/-3 dB, but the flatness of the system is less than or equal to +/-1 dB, and the performance of the product is greatly improved.
(5) The photoelectric conversion assembly combines the advantages of high bandwidth, low loss, interference resistance and the like of microwave light, solves the technical bottlenecks of low cost, high performance, arraying and the like, has the characteristics of microminiaturization, high integration degree, adjustable attenuation, high reliability and the like, meets the requirement of rapid development of the photoelectric information technology in the existing civil and military fields, realizes the functions of multi-channel photoelectric conversion, radio frequency amplification and the like, particularly provides a multi-channel photoelectric interconnection solution for airborne countermeasure and radar communication systems in the defense field, is a subversive technology in the future ROF field, is widely applied to the military fields of electronic countermeasure, radar communication and the like, and is also popularized and used in the civil fields of mobile communication and the like.
Drawings
FIG. 1 is a front view of the present invention;
FIG. 2 is a side view of the present invention;
FIG. 3 is a top view of FIG. 1;
fig. 4 is a bottom view of fig. 1.
FIG. 5 is a schematic view of one side of the interior of the housing;
FIG. 6 is a schematic view of another side of the interior of the housing;
fig. 7 is a schematic diagram of the internal structure of a single cavity.
The device comprises a shell 1, a power supply protection circuit board 2, a power supply wiring board 3, an integrated cavity 4, a detector chip 5, a radio frequency amplifier 6, a radio frequency adjustable attenuator 7, a ceramic substrate 8, a tapered inductor 9, a network circuit 10-T, a tungsten copper gasket 11, an SSMP connector 12, a microstrip line 13, a SSMP connector center conductor 14, an optical fiber 15, a small cover plate 16, a gold wire 17, a shell upper cover plate 18, an optical fiber inclined plane 19-42 degrees, a sheath 20, a bonding pad 21, an optical cable 22 and an AMT connector 23.
Detailed Description
For a better understanding of the present invention, reference will now be made to the following examples taken in conjunction with the accompanying drawings. The following examples are given to illustrate the detailed embodiments and the operation steps based on the technology of the present invention, but the scope of the present invention is not limited to the following examples.
The detectors and amplifiers of the existing microwave optoelectronic devices have specific packaging technologies, and the interconnection and integration of the two packaging forms are difficult and cannot meet the requirements of new-generation weaponry. The invention utilizes the micro-assembly technology, integrates PIN photoelectric chips (detector chips) and radio frequency microwave chips of different types together for the first time through impedance matching, and realizes the miniaturization and high integration of components by multi-path integration. Index optimization is carried out through key technologies such as a photoelectric chip binding technology, an optical coupling technology, a radio frequency microwave circuit design technology and a photoelectric integration technology during integrated packaging.
The multi-path parallel photoelectric conversion assembly comprises an outer shell 1, a power protection circuit board 2, a power wiring board 3 and a plurality of integrated cavities 4, wherein the power protection circuit board 2, the power wiring board 3 and the integrated cavities 4 are arranged in the outer shell. Each integrated cavity is a channel. The power supply protection circuit board is electrically connected with the power supply wiring board, and the power supply wiring board is electrically connected with the plurality of integrated cavities. The structure in the integrated cavities is the same, and a detector chip 5 (namely a PIN photoelectric chip), a radio frequency amplifier 6 and a radio frequency adjustable attenuator 7 are sequentially arranged in each integrated cavity from top to bottom. The detector chip is fixed on the ceramic substrate 8, the power supply end of the detector chip is additionally provided with the conical inductor 9, the ceramic substrate is further integrated with the T-shaped network circuit 10, and the conical inductor and the T-shaped network circuit are both connected with the detector chip. The detector chip is used for realizing photoelectric signal conversion; the conical inductor can improve flatness on one hand, and can block high-frequency signals which are interfered by other cavities on the other hand, so that the isolation between multiple channels is improved. The loss is minimum when the transmission impedance of the radio frequency signal is 50 ohms, the output impedance of the detector chip is about several kilo ohms, and the output impedance of the detector chip can be reduced to 50 ohms through the T-shaped network circuit, so that the purpose of impedance matching is achieved. In order to meet the requirements of heat dissipation and expansion coefficient of products and improve the reliability of the products under high and low temperatures, the radio frequency amplifier is fixed on a tungsten copper gasket 11 with the thermal expansion coefficient close to that of a microwave chip (comprising the radio frequency amplifier and a radio frequency adjustable attenuator).
In one embodiment, the detector chip and the radio frequency amplifier are respectively fixed on the ceramic substrate and the tungsten copper gasket through conductive adhesive, and the ceramic substrate, the tungsten copper gasket and the radio frequency adjustable attenuator are fixed in the cavity through the conductive adhesive. In other embodiments, the above devices may be secured in other ways.
The detector chip in each cavity is connected with the optical coupling system at the top of the cavity, the bottom of each cavity is also provided with an SSMP connector 12, and the detector chip, the radio frequency amplifier, the radio frequency adjustable attenuator and the SSMP connector are sequentially arranged in the cavity from top to bottom. The detector chip and the radio frequency amplifier, the radio frequency amplifier and the radio frequency adjustable attenuator, and the radio frequency adjustable attenuator and the SSMP connector are connected through 50 ohm microstrip lines 13. The microstrip line is connected with the central conductor 14 of the SSMP connector by adopting the existing mode of resistance welding gold-coated strip, and the microstrip line and the T-shaped network circuit on the ceramic substrate, the microstrip line and the microstrip line, the microstrip line and the radio frequency amplifier and the microstrip line and the radio frequency adjustable attenuator are interconnected by adopting the mode of gold wire bonding. The channel gain of the radio frequency amplifier can be ensured to be 15dB through the measures, and the flatness in a 0.8-18 GHz band is less than or equal to +/-1 dB.
The optical coupling system adopts a single fiber form, optical simulation such as ZMAX and OptiSystemm is carried out, a 42-degree inclined plane design is adopted at the coupling position of the optical fiber 15 and the detector chip, full emission of the end face of the optical fiber is realized through the 42-degree optical fiber inclined plane design, and the coupling efficiency of the optical fiber and the detector chip is up to 90% or more. After the coupling of the multi-channel detector chip and the optical fiber is finished, the multi-channel optical fiber is synthesized to an AMT connector for output by adopting a ribbon merging process.
According to ADS calculation and HFSS simulation, cavities with proper sizes are designed for multiple radio frequency channels, after a plurality of integrated cavities are packaged, the cavities are assembled with small cover plates 16 and sealed through conductive adhesive, the small cover plates and the cavities are sealed, the small cover plates are designed to be made of copper materials by utilizing the shielding effect and skin effect of copper on radio frequency signals, the isolation index can be improved to a great extent, the channel isolation of products is improved, and the in-band isolation of 0.8-18 GHz is more than or equal to 65 dBc. And meanwhile, the upper cover plate and the lower cover plate of the outer shell of the product are sealed in a parallel seam welding mode, so that the air tightness requirement is met.
The following description will be further made by taking a 6-channel integrated photoelectric conversion module as an example shown in the accompanying drawings:
the embodiment shown in fig. 1 is a 6-channel parallel photoelectric conversion assembly, and a 6-channel PIN photodiode (detector chip), a microwave chip low-noise amplifier (radio frequency amplifier), and a radio frequency adjustable attenuator are integrally packaged in a package by a micro-assembly technology, so that the miniaturization and high integration of the assembly are realized. Index optimization is carried out through key technologies such as a photoelectric chip binding technology, an optical coupling technology, a radio frequency microwave circuit design technology and a photoelectric integration technology during integrated packaging. The single cavity is taken as an example for illustration:
the first step is the encapsulation of the detector chip: in this embodiment, a ceramic substrate is fixed in a cavity through a conductive adhesive, then a detector chip is fixed on the ceramic substrate through the conductive adhesive, a T-type network circuit is integrated on the ceramic substrate, and a tapered inductor is added at a power supply end of the detector chip, so that both the T-type network circuit and the tapered inductor are connected with the detector chip, a T-shaped network is adopted to reduce the radio frequency output impedance of a PIN photodiode (detector chip) to 50 Ω, thereby achieving the purpose of impedance matching, and improving the flatness and the isolation between multiple channels through the tapered inductor. The detector chip is also connected with an optical coupling system at the top of the cavity, the optical coupling system adopts a single fiber form, ZMAX and OptiSystemm simulation is carried out, the coupling position of the optical fiber and the detector chip is designed to be a 42-degree inclined plane, an optical signal is totally reflected to a photosensitive surface of the detector chip through the 42-degree optical fiber inclined plane, the coupling efficiency reaches 90% or more, and the optical cable at the top of each cavity is connected with an AMT connector after being collected.
The second step is the encapsulation of the radio frequency amplifying circuit: the optical signal of each channel is converted into an electric signal through the detector chip, has lower output impedance through the T-shaped network circuit, is transmitted to the radio frequency amplifier through the 50-ohm microstrip line, is transmitted to the radio frequency adjustable attenuator for processing, and is finally output through the SSMP connector on the tube shell. In order to improve the reliability of the photoelectric conversion assembly at high and low temperatures, a tungsten copper gasket with a thermal expansion coefficient similar to that of a microwave chip is designed, and the requirements of heat dissipation and the expansion coefficient are met. In this embodiment, the tungsten-copper pad is fixed in the cavity through a conductive adhesive, and the rf amplifier is fixed on the tungsten-copper pad through a conductive adhesive. The radio frequency adjustable attenuator is fixed in the cavity through conductive adhesive. The microstrip line and the T-shaped network circuit on the ceramic substrate, the radio frequency amplifier, the radio frequency adjustable attenuator and the microstrip line are interconnected in a gold wire bonding mode, the microstrip line and the central conductor of the SSMP connector are connected in a resistance welding gold-coated mode, the channel gain of the amplifier can be guaranteed to be 15dB, and the flatness in the band of 0.8-18 GHz is less than or equal to +/-1 dB.
The third step is the sealing of the shell: through ADS calculation and HFSS simulation, a cavity with a proper size is designed for a radio frequency channel, a small cover plate made of copper is designed, the small cover plate is sealed with the cavity through conductive adhesive, the isolation index can be improved to a great extent, and the in-band isolation of 0.8-18 GHz is more than or equal to 65 dBc. Meanwhile, the upper cover plate 18 and the lower cover plate (the lower cover plate is opposite to the upper cover plate, and is not shown in the figure) of the shell are sealed in a parallel seam welding mode, and the air tightness requirement is met.
The external dimensions of the 6-channel parallel photoelectric conversion module shown in fig. 1 are 49.5mm (length) × 23mm (width) × 7mm (height), wherein the 6-channel input optical fiber adopts a ribbon combination mode, the optical interface is an AMT connector, and the radio frequency output adopts an SSMP connector, so that the miniaturization and the lightness of the product are realized.
The invention designs a cavity with proper size for each channel through the electromagnetic field simulation of ADS and HFSS, not only can integrate a detector chip, a radio frequency amplifier and a radio frequency adjustable attenuator in one cavity, but also can integrate a multi-channel cavity in one shell, and can lead the photoelectric conversion component to have the characteristics of miniaturization, light weight, low cost, adjustable attenuation, high reliability and the like. Through impedance matching, PIN photoelectric chips, radio frequency amplifiers and radio frequency adjustable attenuators of different types are integrated together for the first time, and multi-path integration is adopted, so that an ultrahigh integrated photoelectric system is realized. Through the photoelectric coupling simulation of ZMAX, OptiSystemm and the like, the optical coupling system has high coupling efficiency and achieves the flatness of 0.8-18 GHz in a band less than or equal to +/-1 dB.
The invention adopts the micro-assembly process to realize the photoelectric conversion of the multi-channel parallel radio frequency light modulation signals, simultaneously carries out gain compensation and attenuation on the converted radio frequency signals, realizes the output of low flatness, low stray and high isolation of analog signals, has the in-band flatness of 0.8-18 GHz less than +/-1 dB, the stray inhibition less than-90 dBc and the in-band isolation of 0.8-18 GHz more than or equal to 65dBc, and meets the index requirements of airborne countermeasure in the defense field and microwave optical transmission in a radar communication system.
The above description is only an embodiment of the present invention, and is not intended to limit the present invention in any way, and the present invention may also have other embodiments according to the above structures and functions, and is not listed again. Therefore, any simple modification, equivalent change and modification of the above embodiments according to the technical essence of the present invention by those skilled in the art can be made within the technical scope of the present invention.
Claims (9)
1. An ultrahigh-integration multi-path parallel photoelectric conversion assembly comprises an outer shell (1), a power supply protection circuit board (2) arranged in the outer shell, and a power supply wiring board (3) connected with the power supply protection circuit board (2), and is characterized by further comprising a plurality of integration cavities (4) connected with the power supply wiring board (3); a detector chip (5), a radio frequency amplifier (6) and a radio frequency adjustable attenuator (7) are arranged in each integrated cavity; in each integrated cavity, a detector chip is connected with an optical coupling system at the top of the cavity, a radio frequency adjustable attenuator is connected with an SSMP connector (12) arranged at the bottom of the cavity, and a radio frequency amplifier is arranged between the detector chip and the radio frequency adjustable attenuator; the detector chip is connected with the radio frequency amplifier, the radio frequency amplifier is connected with the radio frequency adjustable attenuator, and the radio frequency adjustable attenuator is connected with the SSMP connector through microstrip lines.
2. The ultra-high integrated multi-channel parallel photoelectric conversion assembly according to claim 1, wherein the detector chip (5) is fixed on a ceramic substrate (8) fixed in the cavity; the power supply end of the detector chip is connected with a conical inductor (9), a T-shaped network circuit (10) is further integrated on the ceramic substrate, and the detector chip is connected with the microstrip line through the T-shaped network circuit; the output impedance of the detector chip is reduced to 50 omega through a T-type network circuit, and the flatness of the photoelectric conversion assembly and the isolation between multiple channels are improved through the tapered inductor.
3. The ultra-high integrated multi-channel parallel photoelectric conversion assembly of claim 2, wherein the microstrip line and the T-type network circuit, the microstrip line and the microstrip line, the microstrip line and the radio frequency amplifier, and the microstrip line and the radio frequency adjustable attenuator are interconnected by gold wire bonding.
4. The ultra-high integrated multi-channel parallel photoelectric conversion assembly of claim 1, wherein the microstrip line is connected to the central conductor of the SSMP connector by means of resistance-welding gold-coated tape.
5. The ultra-high integrated multi-channel parallel photoelectric conversion assembly of any one of claims 1 to 4, wherein the microstrip line is a 50 ohm transmission line.
6. The ultra-high integrated multi-channel parallel photoelectric conversion assembly as claimed in claim 1 or 2, wherein the radio frequency amplifier (6) is fixed on a tungsten copper gasket (11) fixed in the cavity, and the tungsten copper gasket is used for meeting the requirements of heat dissipation and expansion coefficient of the product and improving the reliability of the product at high and low temperatures.
7. The ultra-high integration multi-channel parallel photoelectric conversion assembly as claimed in claim 1, wherein the optical coupling system is in the form of a single fiber, a 42 ° inclined plane is provided at the coupling position of the optical fiber and the detector chip, and the optical signal is totally reflected to the photosensitive surface of the detector chip through the 42 ° optical fiber inclined plane; after the coupling of each of the multiple detector chips is completed, the multiple optical fibers are synthesized into an AMT connector (23) through a ribbon merging process.
8. The ultra-high integrated multi-channel parallel photoelectric conversion module as claimed in claim 1, wherein a small cover plate (16) of copper material is further sealed on each cavity.
9. The ultra-high integrated multi-channel parallel photoelectric conversion module as claimed in claim 1, wherein the in-band isolation of the photoelectric conversion module is greater than or equal to 65dBc at 0.8-18 GHz, the in-band flatness of 0.8-18 GHz is less than or equal to ± 1dB, and the channel gain of the RF amplifier is 15 dB.
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| CN202111445235.8A CN114284258A (en) | 2021-11-30 | 2021-11-30 | Ultrahigh-integration multi-channel parallel photoelectric conversion assembly |
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| CN202111445235.8A CN114284258A (en) | 2021-11-30 | 2021-11-30 | Ultrahigh-integration multi-channel parallel photoelectric conversion assembly |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115172353A (en) * | 2022-06-30 | 2022-10-11 | 重庆秦嵩科技有限公司 | 4-channel photoelectric detector based on photoelectric hybrid integration |
| CN115347907A (en) * | 2022-10-17 | 2022-11-15 | 上海三菲半导体有限公司 | Multichannel radio frequency receiving assembly |
-
2021
- 2021-11-30 CN CN202111445235.8A patent/CN114284258A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115172353A (en) * | 2022-06-30 | 2022-10-11 | 重庆秦嵩科技有限公司 | 4-channel photoelectric detector based on photoelectric hybrid integration |
| CN115347907A (en) * | 2022-10-17 | 2022-11-15 | 上海三菲半导体有限公司 | Multichannel radio frequency receiving assembly |
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