CN211127731U - High-efficiency broadband power amplifier and radio frequency transceiver - Google Patents
High-efficiency broadband power amplifier and radio frequency transceiver Download PDFInfo
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- CN211127731U CN211127731U CN201922274845.0U CN201922274845U CN211127731U CN 211127731 U CN211127731 U CN 211127731U CN 201922274845 U CN201922274845 U CN 201922274845U CN 211127731 U CN211127731 U CN 211127731U
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Abstract
The utility model discloses a high efficiency broadband power amplifier and radio frequency transceiver, including input port, broadband input matching circuit, input broadband direct current bias circuit, power amplification transistor, output broadband direct current bias circuit, low pass filter network, supplementary matching transmission line and output load; the input port is connected with one end of the broadband input matching circuit, the other end of the input port is connected with the grid electrode of the power amplification transistor, the drain electrode of the power amplification transistor is respectively connected with one end of the output broadband direct current biasing circuit and one end of the low-pass filter network, the other end of the low-pass filter network, the auxiliary matching transmission line and the output load are sequentially connected, the input broadband direct current biasing circuit is connected with the broadband input matching circuit, and the source electrode of the power amplification transistor is grounded. The utility model discloses can work at very wide frequency band within range, adapt to multiple communication frequency channel, multiple performance such as the size is little, efficient is applicable to among many radio frequency systems.
Description
Technical Field
The utility model relates to a wireless communication field, concretely relates to high efficiency wide band power amplifier and radio frequency transceiver.
Background
The power amplifier is a key component in a radio frequency transceiver, high efficiency is an important index of the power amplifier, because the power amplifier accounts for 40% -60% of the energy consumption of a base station, the efficiency improvement of the power amplifier can greatly prolong the service life of a device battery, on the other hand, the reduction of the power consumption in the base station device can reduce the resource consumption and the emission of carbon dioxide, and the high-efficiency broadband power amplifier has good expansibility on the aspect of potential compatibility with the future infinite communication standard, so the high-efficiency broadband power amplifier has important research value.
In recent years, the academia has proposed some solutions for how to design broadband power amplifiers, such as using real-frequency technology to implement broadband matching networks, but the real-frequency technology is difficult to implement when the bandwidth exceeds a frequency doubling, and not only may the resulting network not meet the practical processing requirements. Furthermore, there is a proposal by schbyshev low-pass filter network to act as a wide-band power amplifier input-output matching network, but the roll-off generated by this method is too gentle to suppress harmonics. In order to solve the above problems, some researchers have improved the chebyshev low-pass filter network to form an elliptic filter response, thereby improving the harmonic suppression effect. However, the impedance matching of the whole working frequency band is only based on the impedance of one frequency point, so that the bandwidth is limited to one frequency multiplication.
SUMMERY OF THE UTILITY MODEL
In order to overcome the defect and not enough that prior art exists, the utility model provides a high efficiency wide band power amplifier, the utility model discloses a based on low pass filter matching network, can produce oval-shaped filtering response and can realize exceeding the work bandwidth of 2 doubling of frequencies and exceeding the wide band harmonic suppression effect of 3 harmonics through using quarter wavelength and half wavelength branch knot of opening a way.
It is another object of the present invention to provide a radio frequency transceiver.
The utility model adopts the following technical scheme:
a high-efficiency broadband power amplifier comprises an input port, a broadband input matching circuit, an input broadband direct current bias circuit, a power amplification transistor, an output broadband direct current bias circuit, a low-pass filter network, an auxiliary matching transmission line and an output load;
the input port is connected with one end of the broadband input matching circuit, the other end of the input port is connected with the grid electrode of the power amplification transistor, the drain electrode of the power amplification transistor is respectively connected with one end of the output broadband direct current biasing circuit and one end of the low-pass filter network, the other end of the low-pass filter network, the auxiliary matching transmission line and the output load are sequentially connected, the input broadband direct current biasing circuit is connected with the broadband input matching circuit, and the source electrode of the power amplification transistor is grounded.
The broadband input matching network comprises a third microstrip line, a fourth microstrip line, a fifth microstrip line, a sixth microstrip line and a seventh microstrip line which are connected in sequence.
The low-pass filter network has an elliptical filter response and comprises two quarter-wavelength open-circuit branches, a section of microstrip line and a half-wavelength open-circuit branch, wherein the two quarter-wavelength open-circuit branches are connected in parallel, and are connected in series with the section of microstrip line and then connected in parallel with the half-wavelength open-circuit branch.
The half-wavelength open circuit branch is realized by step type impedance.
The input broadband direct current bias circuit and the output broadband direct current bias circuit are identical in structure and size.
The input broadband direct current bias circuit and the output broadband direct current bias circuit respectively comprise a section of microstrip line with equivalent quarter wavelength, two bypass capacitors and two fan-shaped branches, and the two bypass capacitors and the two fan-shaped branches are connected in parallel and then connected in series with the section of microstrip line with the quarter wavelength.
The length and width of the auxiliary matching transmission line are determined by the optimum impedance matching point of the power amplifier.
The equivalent quarter-wave microstrip line is realized by step impedance.
The width of a section of series microstrip line and a quarter-wavelength open-circuit branch in the low-pass filter network is determined by the out-of-band rejection of the broadband power amplifier.
A radio frequency transceiver includes a high efficiency wideband power amplifier.
The utility model has the advantages that:
(1) the utility model has wide impedance matching bandwidth, compared with the traditional broadband matching scheme, the utility model can realize the bandwidth exceeding 2 times frequency by a simpler structure;
(2) the utility model discloses the harmonic suppression is effectual, compares in the mild roll-off of traditional chebyshev low pass matching network, the utility model discloses a more precipitous roll-off is realized to wide band biasing circuit to realize better harmonic suppression, harmonic suppression effect.
Drawings
Fig. 1 is a schematic structural diagram of a high-efficiency broadband power amplifier based on a low-pass filter matching network according to the present invention;
fig. 2 is a graph of the results of the testing of the present invention with respect to the variation of drain efficiency and gain with output power at 0.8, 1.3, 1.8, 2.3, 2.8GHz, respectively;
fig. 3 is a graph of the test results of the present invention for output power, gain, and drain efficiency over the entire frequency band.
Fig. 4 shows the results of the output power of the test and simulation of the present invention as a function of frequency.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, but the present invention is not limited thereto.
Examples
As shown in fig. 1 and fig. 2, a high-efficiency wideband power amplifier includes an input port, a wideband input matching circuit, a wideband dc bias circuit, a power amplifying transistor, a low-pass filter network, and an auxiliary matching transmission line, where the wideband dc bias circuit includes an input wideband dc bias circuit and an output wideband dc bias circuit.
The input port is connected with one end of the broadband input matching circuit, the other end of the input port is connected with the grid electrode of the power amplification transistor, the drain electrode of the power amplification transistor is respectively connected with one end of the output broadband direct current biasing circuit and one end of the low-pass filter network, the other end of the low-pass filter network, the auxiliary matching transmission line and the output load are sequentially connected, the input broadband direct current biasing circuit is connected with the broadband input matching circuit, and the source electrode of the power amplification transistor is grounded.
In the present embodiment, the wavelength refers to the wavelength of the center frequency of the operating band.
The broadband input matching circuit is composed of a third microstrip line 3, a fourth microstrip line 4, a fifth microstrip line 5, a sixth microstrip line 6 and a seventh microstrip line 7 which are connected in sequence, and the third microstrip line is connected with the input port 1 through a first capacitor C1 and a second microstrip line 2. The width and the length of the microstrip line in the broadband input matching circuit are obtained by the optimal source impedance obtained by actual traction, and the other end of the seventh microstrip line is connected with the grid electrode of the power amplification transistor T.
The input broadband direct current bias circuit and the output broadband direct current bias circuit are identical in structure size.
The input broadband direct current bias circuit is connected between a sixth microstrip line and a seventh microstrip line and comprises a section of microstrip line with equivalent quarter wavelength, two bypass circuits and two fan-shaped branches, wherein the two bypass capacitors and the two fan-shaped branches are connected in parallel and then connected in series with the section of microstrip line with equivalent quarter wavelength, and the implementation manner of the embodiment is as follows: comprises a ninth microstrip line 9, a tenth microstrip line 10, a second bypass capacitor C2 and a second bypass capacitor C2The microstrip line comprises a three-bypass capacitor C3, a first fan-shaped branch 11, a second fan-shaped branch 12 and a thirteenth microstrip line 13, wherein the ninth microstrip line and the tenth microstrip line form an equivalent quarter-wave line, the microstrip line is realized by step impedance, and the specific connection mode is as follows: one end of a ninth microstrip line is connected with the sixth microstrip line and the seventh microstrip line, the other end of the ninth microstrip line is connected with one end of a tenth microstrip line in series, the other end of the tenth microstrip line is respectively connected with a first bypass capacitor C2, a first fan-shaped branch knot 11 and a second fan-shaped branch knot 12, the other end of the first bypass capacitor C2 is grounded, the other end of the thirteenth microstrip line is respectively connected with a first bypass capacitor C2, a first fan-shaped branch knot 11 and a second fan-shaped branch knot 12, and the other end of the thirteenth microstrip line is respectively connected with a second bypass capacitor C3 and a voltage VGIs connected, wherein VGIt was-3.1V.
The output broadband direct current bias circuit is respectively connected with one end of a fourteenth microstrip line 14 and one end of a twentieth microstrip line 20, the other end of the fourteenth microstrip line is connected with the drain of the power amplification transistor, the source of the power amplification transistor is grounded, the fourteenth microstrip line and the twentieth microstrip line play a role in adjusting harmonic impedance, and the length and the width of the output broadband direct current bias circuit are determined by an optimal second harmonic impedance matching point of the power amplification transistor.
The output broadband direct current bias circuit comprises a section of equivalent quarter-wavelength microstrip line, two bypass circuits and two fan-shaped branches, wherein the two bypass capacitors and the two fan-shaped branches are connected in parallel and then connected in series with the section of quarter-wavelength microstrip line, the equivalent quarter-wavelength line is realized through step impedance (a fifteenth microstrip line and a sixteenth microstrip line), and zero point is introduced to the right side of a passband to realize steeper roll-off, so that better harmonic suppression can be realized.
The output broadband dc bias circuit in this embodiment specifically includes a fifteenth microstrip line 15, a sixteenth microstrip line 16, a third bypass capacitor C4, a fourth bypass capacitor C5, a third fan-shaped branch 17, a fourth fan-shaped branch 18, and a nineteenth microstrip line 19. One end of the fifteenth microstrip line is connected between the fourteenth microstrip line and the twentieth microstrip line, and the other end of the fifteenth microstrip line is connected with one end of the sixteenth microstrip lineThe other end of the sixteenth microstrip line is connected with the fourth bypass capacitor and the two fan-shaped branches respectively, that is, the bypass capacitor and the two fan-shaped branches are in parallel connection, one end of the nineteenth capacitor is connected with the two fan-shaped branches respectively, and the other end of the nineteenth capacitor is connected with the third bypass capacitor and the voltage V respectivelyDIs connected, wherein VDIt was 28V.
The low-pass filter network comprises two quarter-wavelength open-circuit branches (twenty-first and twenty-second microstrip lines) connected in parallel, a section of series microstrip line (twenty-third microstrip line), and a half-wavelength open-circuit branch (twenty-fourth microstrip line) connected in parallel, wherein the half-wavelength open-circuit branch is realized by step impedance.
The widths of the section of the series microstrip line (the twenty-third microstrip line) and the parallel quarter-wavelength open-circuit branch are determined by the out-of-band rejection of the broadband power amplifier.
The utility model discloses an use quarter wavelength and half wavelength branch knot of opening a way can produce oval type filtering response equally and can realize exceeding the work bandwidth of 2 doubling of frequency and exceeding the wide band harmonic suppression effect of 3 harmonics
In this embodiment, a low-pass filter network with an elliptic filter response is used as a wideband output matching network of the power amplifier, and a section of auxiliary matching transmission line is used to assist the low-pass filter network in achieving wideband impedance matching. Meanwhile, a zero point can be generated at a very close distance from the right side of the passband through the broadband direct current bias circuit of the output part, so that very steep roll-off is generated, and the effect of harmonic suppression is provided.
In this embodiment, the low-pass filter network includes a twenty-first microstrip line 21, a twenty-second microstrip line 22, a twenty-third microstrip line 23, and a twenty-fourth microstrip line 24. The twenty-third microstrip line is respectively connected with the twenty-first microstrip line, the twenty-second microstrip line and the twenty-third microstrip line, and the other end of the twenty-third microstrip line is respectively connected with the twenty-fourth microstrip line 24 and the auxiliary matching transmission line.
The auxiliary matching connection line is formed by a twenty-fifth microstrip line 25, the length and the width of the auxiliary matching connection line are determined by an optimal impedance matching point of the power amplifier transistor, and the twenty-fifth microstrip line is connected with a load through a second capacitor C6 and a twenty-sixth microstrip line 26.
The utility model discloses in, utilize wide band filter matching network, wide band direct current bias circuit to unite the impedance match that supplementary transmission line realized in the wide band range, can also realize the harmonic suppression of high frequency part simultaneously.
Fig. 1 shows a block diagram of an embodiment of the high-efficiency broadband power amplifier based on the low-pass filter matching network, in which a power amplifier transistor T selected in the embodiment is a GaN HEMT CGH40010F of Cree corporation, the power amplifier transistor includes a gate G, a drain D and a source S, and an input end, an output end and a gate G of the circuit have a dc bias voltage VGAnd a drain D DC bias voltage VDAs noted in fig. 1, the specific parameters are: vG＝-3.1V， VD＝28V。
The high-efficiency broadband power amplifier based on the low-pass filter matching network of the embodiment processes and selects the PCB circuit board dielectric material with the following parameters:r＝2.2,h＝0.813,tan＝0.0027。
it can be seen from fig. 2 that the efficiency of the power amplifier when the power amplifier reaches the saturated output under the measured frequency point is more than 60%, and the gain is more than 10 dB.
FIG. 3 shows the test results of the output power, the gain and the drain efficiency of the high-efficiency broadband power amplifier based on the low-pass filter matching network in the whole frequency band, the drain efficiency is 56.7% -74.9%, the output power is 38.6dBm-42.87dBm, the gain is 8dB-15.67dB in the frequency band range of 0.5GHz-3.2GHz,
fig. 4 shows the results of the tested and simulated output power as a function of frequency, where the tested and simulated output power fits well before 4.2GHz and has significant harmonic suppression starting from 3.4GHz, which can reach 10GHz from the simulation results.
The broadband direct current bias circuit does not affect a radio frequency signal channel, the low-pass filter matching network is used for achieving broadband impedance transformation and harmonic suppression of a high-frequency part and has an elliptical filter response, and the auxiliary matching transmission line is used for assisting the low-pass filter matching network to achieve broadband impedance matching. Contrast and traditional low pass filter network, the utility model discloses biasing circuit on the low pass filter matching network cooperation that uses can realize more precipitous roll-off and better harmonic suppression when realizing wide band impedance matching's function.
To sum up, the utility model provides a high efficiency wide band power amplifier based on low pass filter matching network can work at very wide frequency band within range, adapts to multiple communication frequency channel, and multiple performance such as the size is little, efficient is applicable to among many radio frequency systems.
Any of the above high efficiency wideband power amplifiers can be used in radio frequency transceivers and integrated circuits.
The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited by the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be equivalent replacement modes, and all are included in the scope of the present invention.
Claims (10)
1. A high-efficiency broadband power amplifier is characterized by comprising an input port, a broadband input matching circuit, an input broadband direct current bias circuit, a power amplification transistor, an output broadband direct current bias circuit, a low-pass filter network, an auxiliary matching transmission line and an output load;
the input port is connected with one end of the broadband input matching circuit, the other end of the broadband input matching circuit is connected with a grid electrode of the power amplification transistor, a drain electrode of the power amplification transistor is respectively connected with one end of the output broadband direct current bias circuit and one end of the low-pass filter network, the other end of the low-pass filter network, the auxiliary matching transmission line and the output load are sequentially connected, the input broadband direct current bias circuit is connected with the broadband input matching circuit, and a source electrode of the power amplification transistor is grounded.
2. The high-efficiency broadband power amplifier according to claim 1, wherein the broadband input matching network comprises a third microstrip line, a fourth microstrip line, a fifth microstrip line, a sixth microstrip line and a seventh microstrip line, which are connected in sequence.
3. The broadband power amplifier of claim 1, wherein the low-pass filter network comprises two quarter-wavelength open-circuit branches, a microstrip line, and a half-wavelength open-circuit branch, and the two quarter-wavelength open-circuit branches are connected in parallel and then connected in series with the microstrip line and then connected in parallel with the half-wavelength open-circuit branch.
4. A high efficiency broadband power amplifier according to claim 3 wherein the half wavelength open stub is implemented by a stepped impedance.
5. The high efficiency broadband power amplifier of claim 1, wherein the input broadband DC bias circuit and the output broadband DC bias circuit are identical in structure and size.
6. The high-efficiency broadband power amplifier according to claim 5, wherein the input broadband DC bias circuit and the output broadband DC bias circuit each comprise an equivalent quarter-wavelength microstrip line, two bypass capacitors and two sector branches, and the two bypass capacitors and the two sector branches are connected in parallel and then connected in series with a quarter-wavelength microstrip line.
7. The high efficiency broadband power amplifier of claim 1, wherein the length and width of the auxiliary matching transmission line are determined by the optimal impedance matching point of the power amplifier.
8. The broadband power amplifier of claim 6, wherein the equivalent quarter-wave microstrip line is implemented by step impedance.
9. The high efficiency broadband power amplifier of claim 3, wherein the width of a series microstrip line and a quarter-wave open stub in the low pass filter network is determined by the out-of-band rejection of the broadband power amplifier.
10. A radio frequency transceiver comprising the high efficiency broadband power amplifier of any one of claims 1-9.
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| CN201922274845.0U CN211127731U (en) | 2019-12-16 | 2019-12-16 | High-efficiency broadband power amplifier and radio frequency transceiver |
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| CN201922274845.0U CN211127731U (en) | 2019-12-16 | 2019-12-16 | High-efficiency broadband power amplifier and radio frequency transceiver |
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