CN109714011A - A kind of GaAs radio-frequency power amplifier applied in the 5th third-generation mobile communication 28GHz - Google Patents
A kind of GaAs radio-frequency power amplifier applied in the 5th third-generation mobile communication 28GHz Download PDFInfo
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- CN109714011A CN109714011A CN201811591250.1A CN201811591250A CN109714011A CN 109714011 A CN109714011 A CN 109714011A CN 201811591250 A CN201811591250 A CN 201811591250A CN 109714011 A CN109714011 A CN 109714011A
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Abstract
The invention discloses the rf power amplifier circuit of 28GHz applied to the 5th generation communication millimeter wave frequency band a kind of, which includes input matching circuit, and buffer circuit between grade, final power output stage, intervalve matching circuit and output harmonic wave inhibit matching network.Input matching uses T-type mating structure, and input stage uses common-source amplifier structure, and quiescent biasing pushes grade quiescent biasing to improve efficiency in B class working condition in A class working condition, intermediate buffering grade with final power, and output matching network uses harmonic suppression network structure.It is secondary that harmonic suppression network uses series resonant structure to make, and three times, quintuple harmonics shorted to earth increases efficiency, and the linearity of radiofrequency signal output is higher.PA of the radio-frequency input signals Jing Guo preceding three-level carries out power amplification, inhibits network, broadband matching network by second harmonic, triple-frequency harmonics inhibits network, and quintuple harmonics inhibits network, finally by coupled capacitor to load.
Description
Technical field
The present invention relates to radio-frequency power amplifier fields more particularly to the 5th third-generation mobile communication medium-high frequency section 28GHz to be based on
The radio-frequency power amplifier of GaAs technique.
Background technique
Current wireless communication technique comes into the rear 4G epoch, and 4G technical application range is general wide, technology maturation.But with
The rapid development of society, the demand of people further increase, to network speed and network quality also it is further proposed that new requirement.
2017 year end 3GPP establish first the 5th generation communication standard, and further excitation has the national capital deepening investment of research and development strength
The research and development of 5th generation communication system.Problems are faced in the design of 28GHz millimeter wave frequency band circuit, such as the line of power amplifier
Property degree, efficiency, the heat dissipation of power device, the stability of circuit, the bandwidth etc. of circuit.The Designing power amplifier of high band is especially
Key, directly concerning the success or failure to the 5th third-generation mobile communication.The mobile research of 5th generation of China is various just in boost phase
Telecommunication circuit framework is proposed that main research, which discusses, concentrates on the 5th low frequency part with communication, to 6GHz frequency below in succession
The comparison of section research is more, and to the fewer of millimeter wave high frequency 28GHz frequency range research, based on this, set forth herein one kind can be applied to the
In five generations, communicated the radio-frequency power amplifier framework of millimeter wave frequency band 28GHz, to solve the amplification of high frequency millimeter wave frequency section radio-frequency power
Device efficiency, the linearity, some column problems such as harmonics restraint.
Summary of the invention
The present invention proposes a kind of circuit knot applied in the GaAs radio-frequency power amplifier of the 5th third-generation mobile communication 28GHz
Structure, it is therefore intended that can apply to the radio-frequency power amplifier of the 5th third-generation mobile communication millimeter wave 28GHz frequency range.Structure matching electricity
Road is simple, high-efficient, can preferably inhibit higher hamonic wave.The structure amplifier includes input matching circuit, input stage amplifier,
The first order and second level intervalve matching circuit, second level buffer amplifier, the second level and third intervalve matching circuit, final power
Grade amplifier is pushed, output harmonic wave inhibits match circuit.The input stage gain amplifying circuit, intergrade buffer amplifier, after
Grade power amplification circuit is made by GaAs composite semiconductor technique；State input stage gain amplifying circuit, intergrade Hyblid Buffer Amplifier
Device, rear class power amplification circuit are connected separately with the first biasing circuit, the second biasing circuit, third level power bias grade circuit.
GaAs possesses some characteristic electrons also good compared with Si, and GaAs is allowed to be used in the occasion higher than 250GHz.If equivalent
When GaAs and Si element is operating in high frequency simultaneously, GaAs can generate less noise.Also because GaAs has higher Collapse Pressure,
So GaAs is more suitable for operation in high-power occasion than same Si element.GaAs technique is in terms of radio-frequency devices than Si substrate
Expect much better.Since the transistor in the present invention is using with broad-band gap junction structure GaAs transistor, substantially increase
Carrier Injection Efficiency, to make drain efficiency, power added efficiency and overall conversion efficiency be improved, so that this hair
Gain needed for bright satisfaction and output power.Input stage match circuit and intervalve matching circuit use T-type mating structure.Input
Matching network, inter-stage matching network and impedance transformer network use identical structure, consistency not only can be improved, and can guarantee
The stability of circuit.Specifically, the input matching network includes the first inductance and series connection first capacitor for being connected in parallel on input terminal.
Input matching network uses lump original part matching network, and capacitor plays blocking, makes bias current not by the shadow from input terminal
It rings, improves the linearity of forward gain amplifying circuit well.Input matching network, inter-stage matching network and impedance convert net
Network uses identical circuit structure, and inter-stage matching network and impedance transformer network use foregoing circuit structure, i.e., in forward gain
It is attached by the way of conjugate impedance match between grade between amplifying circuit, rear class power amplification circuit, makes forward gain amplification electricity
The amplified signal in road can smoothly flow into rear class power amplification circuit.Output matching network uses harmonics restraint mating structure,
Including secondary, three times, quintuple harmonics inhibits network, the nonlinearity product that can preferably inhibit power amplifier to generate.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is power amplifier architecture diagram of the present invention.
Fig. 2 is output matching circuit figure of the invention.
Fig. 3 is that output of the invention matches implementing circuit figure.
Specific embodiment
The radio-frequency power amplifier of millimeter wave frequency band as shown in Figure 1 can be applied to fully integrated radio circuit, communication SOC
Equal fields, including input matching network, forward gain amplifying circuit, inter-stage matching network, rear class power amplification circuit and impedance
Converting network, harmonic suppression network its be sequentially connected；
The first order gain amplifying circuit, intergrade buffer circuit, rear class power amplification circuit are connected separately with the first biasing
Circuit, the second biasing circuit, third biasing circuit.Biasing circuits at different levels include gate bias circuit bias and drain biased electrical
Road, drain biasing circuit pass through choke high frequency choke inductance connection Vcc.
As shown in Figure 1, input matching network includes inductance La, capacitor Ca.RFin signal input matching network, with inductance
La is in parallel, then connects with Ca, and the right end of Ca connects input gain grade M1 transistor.Capacitor play hinder DC common-mode signal with
The effect of AC matching, at 50 ohmages that the power source of the input resistant matching of M1 is provided, the power transmission efficiency that makes
It is maximum.Inter-stage matching network between first order amplifier and second level amplifier includes inductance Lb, capacitor Cb.The output signal of the first order
Inter-stage matching network is inputted, it is in parallel with inductance Lb, it then connects with Cb, the right end of Cb connects input gain grade M2 transistor.Electricity
Appearance plays the role of hindering DC common-mode signal and AC matching, and the conjugation of the input resistant matching first order of M2 is exported resistance
The anti-power transmission efficiency out, made is maximum.The inter-stage matching network of the second level and the third level includes inductance Lc, capacitor Ca.Second
Grade signal inputs inter-stage matching network, in parallel with inductance Lc, then connects with Cc, and the right end of Cc connects input gain grade M3 crystal
Pipe.Capacitor plays the role of hindering DC common-mode signal and AC matching, the input resistant matching of M3 to the defeated of the second level
Out at impedance, the power transmission efficiency made is maximum.This programme can reach relatively high increasing by simple three-level common source configuration
Benefit, efficiency and output power, circuit structure is simple, and practical, chip area is small, at low cost, is easily integrated.First order biasing
In A class working condition, the second level work is in shallow B class working condition, and third level work is in deep B class working condition.Most importantly
Output harmonic wave inhibits network, can preferably filter out the higher harmonic component of interference.Fig. 2 is proposed by the present invention a kind of with high order
The structural block diagram of the broadband matching circuit structure of harmonics restraint.The circuit function block mainly includes that radio-frequency power puts amplifying stage PA,
Radio frequency choke inductance La, second harmonic inhibit network, broadband matching network, and triple-frequency harmonics inhibits network, and quintuple harmonics inhibits net
Network.Secondary, three times, quintuple harmonics inhibits network by N (N is greater than 2) rank inductance, the series resonant circuit composition that capacitor is constituted.It penetrates
Frequency input signal is to enter PA from signal input and carry out power amplification, inhibits network, Broadband Matching net by second harmonic
Network, triple-frequency harmonics inhibit network, and quintuple harmonics inhibits network to export to signal, finally by coupled capacitor to antenna load.This
The harmonic suppression network and harmonic wave broadband matching circuit of invention can be fully integrated in one block of silicon using lumped parameter original part
On chip.It avoids improving the reliability of circuit using the unstable of separation original part board-level circuit.2 in harmonic suppression network
2 subharmonic trapper of N rank can be used in subharmonic, and 3 subharmonic inhibit network that 3 subharmonic trapper of N rank, the suppression of 5 subharmonic can be used
5 subharmonic trapper of N rank can be used in network processed.Second harmonic inhibits the realization process of network to reach and meet the requirements such as Fig. 3
Second harmonic inhibits, and 3 ranks is at least needed to inhibit network.It is provided by the invention a kind of using 3 rank trappers, second harmonic is fallen into
Wave.Radiofrequency signal is exported by PA output port, and the previous stage 302 of 301 rear stages in Fig. 3, broadband matching network is exactly two
Subharmonic inhibits network.
Inhibit network comprising 303,304,305,306N rank second harmonic in 302.Wherein 303 inductance L1, with capacitor C1
Series resonant circuit is constituted, resonance second harmonic, this series resonant circuit is to second harmonic short circuit, other subharmonic open circuits.It is humorous
Vibration frequency is 2 times of fundamental frequenciesWherein f0, series resonance is short-circuit to second harmonic, makes two harmonic waves pair
The impedance that ground is seen is zero.303,304,305,306 composition N rank resonance circuits, resonance is on identical second harmonic frequency point.
PA exports one end respectively with 303,304,305,306, broadband matching network connection.It is first connect with L1 in 303, the L1 other end exists
It is connect with C1, the C1 other end is connect with reference.
Similarly in 304,305,306, the output port of PA respectively with L2, the one end L3...Ln connection, L2, L3...Ln's
The other end is with C2, C3...Cn connection, the last capacitor other end with reference is being connected respectively.It thereby realizes to two
The inhibition of subharmonic.Invention applies three order harmonics to inhibit network, includes 303,304,305. lumped parameter capacitors, inductance choosing
With the Surface Mount original part of high quality, such harmonic nests Q with higher (quality factor) reduces the energy damage of harmonic nests
Consumption.306 sections is, in the n rank of ideal situation, actual circuit prove only with 3 rank circuits just very close ideal situation, therefore this hair
Bright circuit is built and has also only built third rank, and three series resonances are parallel with one another, can be with single-point narrow band resonances, in different bandwidth
Under can also with Selecting All Parameters value be arranged in the case where there is certain bandwidth resonance.Three times, quintuple harmonics inhibits realization process such as Fig. 3 of network
Reach the triple-frequency harmonics met the requirements to inhibit, 3 ranks is at least needed to inhibit network.It is provided by the invention a kind of using 3 rank traps
Device, to triple-frequency harmonics trap.Radiofrequency signal is exported by broadband matching network output port, the broadband matching network in Fig. 3
Rear stage, 402 be exactly that triple-frequency harmonics inhibits network.Inhibit network comprising 403,404,405,3 rank triple-frequency harmonics in 402.Its
In 403 by inductance L4, constitute series resonant circuit with capacitor C4, resonance triple-frequency harmonics, this series resonant circuit is to triple-frequency harmonics
To short circuit, other subharmonic open circuits.Resonance frequency is 3 times of fundamental frequenciesWherein f0For fundamental wave frequency
Rate, series resonance is to triple-frequency harmonics short circuit, the impedance zero for seeing that triple-frequency harmonics over the ground.403,404,405,3 ranks of composition are humorous
Shake circuit, and resonance is on identical third harmonic frequencies point.The output end of broadband matching network is respectively with 403,404,405,401
Connection.It is first connect with L4 in 403, the L4 other end is connect with C4, and the C4 other end is connect with reference.Similarly 404,
In 405,406, output one end of broadband matching network respectively with L5, the connection of the one end L6, the other end of L5, L6 respectively with C5,
C6 connection, last capacitor C5, the C6 other end with reference are being connected.Thereby realize the inhibition to triple-frequency harmonics.
Reach the quintuple harmonics met the requirements to inhibit, 3 ranks is at least needed to inhibit network.A kind of use provided by the invention
3 rank trappers, to quintuple harmonics trap.Radiofrequency signal inhibits network output mouth output by three order harmonics, and three in Fig. 3
Order harmonics inhibit the rear stage of network, reach quintuple harmonics through 401 inductance La and inhibit network, 502 be exactly that quintuple harmonics inhibits net
Network.Inhibit network comprising 503,504,505,3 rank quintuple harmonics in 502.Wherein 503 by inductance L7, constitutes and goes here and there with capacitor C7
Join resonance circuit, resonance quintuple harmonics, this series resonant circuit is to quintuple harmonics to short circuit, other subharmonic open circuits.Resonance frequency
Rate is 5 times of fundamental frequenciesWherein f0For fundamental frequency, series resonance makes five to quintuple harmonics short circuit
The impedance that subharmonic is seen over the ground is zero.503,504,505,3 rank resonance circuits are formed, resonance is in identical third harmonic frequencies
Point on.Output one end of 401 networks is connect with 503,504,505,501 respectively.It is first connect with L7 in 503, the L7 other end exists
It is connect with C7, the C4 other end is connect with reference.Similarly in 504,505, output one end of 401 networks respectively with L8, L9 mono-
End connection, the other end of L8, L9 is with C8, C9 connection, last capacitor C8, the C9 other end with reference is being connected respectively.This
Sample is achieved that the inhibition to quintuple harmonics.Signal is defeated by a bulky capacitor coupling after quintuple harmonics inhibits network processes
Out to loaded antenna.By the signal of above-mentioned processing, high linearity and high efficiency can be obtained.Second harmonic inhibits network, three
Subharmonic inhibits network and quintuple harmonics to inhibit network number of parallel flexibility and changeability to realize different bandwidth demands.
Claims (10)
1. a kind of GaAs radio-frequency power amplifier applied in the 5th third-generation mobile communication 28GHz, which is characterized in that include input
Distribution network, first order gain stage transistor M1, inter-stage matching network, second level buffer stage transistor M2, two three-level interstage matcheds
Network, third level power grade transistor M3 and output harmonic wave inhibit matching stage.
2. a kind of GaAs radio-frequency power amplifier applied in the 5th third-generation mobile communication 28GHz according to claim 1,
It is characterized in that, the input matching network and inter-stage matching network use T-type mating structure.
3. input matching network according to claim 1 and inter-stage matching network use T-type mating structure, feature exists
In the capacitor is connected with transistor, and inductance in parallel accesses ground terminal.
It a kind of is applied in the GaAs radio-frequency power amplifier of the 5th third-generation mobile communication 28GHz 4. according to claim 1
Gain stage transistor M1, which is characterized in that the M1 mutual conductance is sufficiently large, and noise is small, and transistor intrinsic gain is big.
It a kind of is applied in the GaAs radio-frequency power amplifier of the 5th third-generation mobile communication 28GHz 5. according to claim 1
Buffer stage transistor M2, which is characterized in that the M2 connects with first order output inter-stage matching network, and input is matched with the third level
Matching network series connection.
It a kind of is applied in the GaAs radio-frequency power amplifier of the 5th third-generation mobile communication 28GHz 6. according to claim 1
Output stage transistor M2, which is characterized in that the M3 has big active region area, big transconductance parameters.
7. that is told according to claim 1 a kind of applies in the GaAs radio-frequency power amplifier of the 5th third-generation mobile communication 28GHz
Output harmonic wave inhibits network, which is characterized in that the harmonic suppression network series connection second harmonic inhibits network, triple-frequency harmonics of connecting
Inhibit network, series connection quintuple harmonics inhibits network.
8. output harmonic wave according to claim 7 inhibits second harmonic in network to inhibit network, which is characterized in that described two
Subharmonic inhibits network three rank LC series resonant circuits in parallel, and first series inductance, in series capacitance, capacitor one end ground connection terminates.
9. output harmonic wave according to claim 7 inhibits triple-frequency harmonics in network to inhibit network, which is characterized in that described three
Subharmonic inhibits network three rank LC series resonant circuits in parallel, and first series inductance, in series capacitance, capacitor one end ground connection terminates.
10. output harmonic wave according to claim 7 inhibits quintuple harmonics in network to inhibit network, which is characterized in that described
Quintuple harmonics inhibits network three rank LC series resonant circuits in parallel, first series inductance, in series capacitance, capacitor one end ground junction
Beam.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110289819A (en) * | 2019-07-04 | 2019-09-27 | 广东工业大学 | A kind of output matching network of radio-frequency front-end and its radio-frequency power amplifier |
| CN110350874A (en) * | 2019-07-09 | 2019-10-18 | 电子科技大学 | A kind of micro-strip power amplifier with harmonic inhibition capability |
| CN112003574A (en) * | 2020-07-14 | 2020-11-27 | 天津工业大学 | K-waveband CMOS high-efficiency radio frequency power amplifier circuit |
| CN112039448A (en) * | 2019-06-04 | 2020-12-04 | 株式会社村田制作所 | Power amplifying circuit |
| CN113411062A (en) * | 2021-08-19 | 2021-09-17 | 深圳飞骧科技股份有限公司 | Matching circuit, radio frequency front end power amplifying circuit and mobile communication equipment |
| CN113922775A (en) * | 2021-09-17 | 2022-01-11 | 深圳飞骧科技股份有限公司 | Coupling circuit applied to low-frequency power amplifier |
| CN114172464A (en) * | 2022-02-09 | 2022-03-11 | 成都嘉纳海威科技有限责任公司 | Broadband harmonic suppression amplifier |
| CN114567262A (en) * | 2022-01-25 | 2022-05-31 | 电子科技大学 | High-efficiency broadband radio frequency power amplifier |
| WO2023019909A1 (en) * | 2021-08-17 | 2023-02-23 | 深圳飞骧科技股份有限公司 | Harmonic suppression circuit, power amplifier module, communication device, and communication system |
| CN116707462A (en) * | 2023-03-10 | 2023-09-05 | 振弦(苏州)微电子有限公司 | Medium-high frequency band PA and multimode multi-band PA chip suitable for 4G wireless communication |
| WO2024007728A1 (en) * | 2022-07-06 | 2024-01-11 | 深圳飞骧科技股份有限公司 | Matching circuit and power amplification circuit |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006005643A (en) * | 2004-06-17 | 2006-01-05 | Sharp Corp | High-frequency amplification circuit and semiconductor integrated circuit |
| CN104716906A (en) * | 2015-04-03 | 2015-06-17 | 广东工业大学 | Method and circuit structure for improving efficiency of wide-band radio frequency power amplifier |
| CN105262446A (en) * | 2015-10-23 | 2016-01-20 | 锐迪科创微电子（北京）有限公司 | Multilevel radio-frequency power amplification circuit |
| CN106849881A (en) * | 2016-12-21 | 2017-06-13 | 北京时代民芯科技有限公司 | A kind of Band Monolithic Integrated integrated low-noise amplifier |
| CN107104684A (en) * | 2017-05-15 | 2017-08-29 | 尚睿微电子（上海）有限公司 | A kind of radio frequency amplification treatment circuit and communication terminal |
| CN107425818A (en) * | 2017-04-17 | 2017-12-01 | 东莞赛唯莱特电子技术有限公司 | A kind of output matching circuit structure for improving radio-frequency power amplifier harmonic performance |
-
2018
- 2018-12-20 CN CN201811591250.1A patent/CN109714011A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006005643A (en) * | 2004-06-17 | 2006-01-05 | Sharp Corp | High-frequency amplification circuit and semiconductor integrated circuit |
| CN104716906A (en) * | 2015-04-03 | 2015-06-17 | 广东工业大学 | Method and circuit structure for improving efficiency of wide-band radio frequency power amplifier |
| CN105262446A (en) * | 2015-10-23 | 2016-01-20 | 锐迪科创微电子（北京）有限公司 | Multilevel radio-frequency power amplification circuit |
| CN106849881A (en) * | 2016-12-21 | 2017-06-13 | 北京时代民芯科技有限公司 | A kind of Band Monolithic Integrated integrated low-noise amplifier |
| CN107425818A (en) * | 2017-04-17 | 2017-12-01 | 东莞赛唯莱特电子技术有限公司 | A kind of output matching circuit structure for improving radio-frequency power amplifier harmonic performance |
| CN107104684A (en) * | 2017-05-15 | 2017-08-29 | 尚睿微电子（上海）有限公司 | A kind of radio frequency amplification treatment circuit and communication terminal |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112039448A (en) * | 2019-06-04 | 2020-12-04 | 株式会社村田制作所 | Power amplifying circuit |
| CN110289819A (en) * | 2019-07-04 | 2019-09-27 | 广东工业大学 | A kind of output matching network of radio-frequency front-end and its radio-frequency power amplifier |
| CN110289819B (en) * | 2019-07-04 | 2023-03-28 | 广东工业大学 | Radio frequency front end and output matching network of radio frequency power amplifier thereof |
| CN110350874A (en) * | 2019-07-09 | 2019-10-18 | 电子科技大学 | A kind of micro-strip power amplifier with harmonic inhibition capability |
| CN112003574A (en) * | 2020-07-14 | 2020-11-27 | 天津工业大学 | K-waveband CMOS high-efficiency radio frequency power amplifier circuit |
| CN112003574B (en) * | 2020-07-14 | 2024-02-09 | 天津工业大学 | K-band CMOS efficient radio frequency power amplifier circuit |
| WO2023019909A1 (en) * | 2021-08-17 | 2023-02-23 | 深圳飞骧科技股份有限公司 | Harmonic suppression circuit, power amplifier module, communication device, and communication system |
| CN113411062A (en) * | 2021-08-19 | 2021-09-17 | 深圳飞骧科技股份有限公司 | Matching circuit, radio frequency front end power amplifying circuit and mobile communication equipment |
| US11936408B2 (en) | 2021-08-19 | 2024-03-19 | Lansus Technologies Inc. | Matching circuit, radio frequency front-end power amplification circuit, and mobile communication device |
| CN113922775B (en) * | 2021-09-17 | 2023-06-27 | 深圳飞骧科技股份有限公司 | Coupling circuit applied to low-frequency power amplifier |
| CN113922775A (en) * | 2021-09-17 | 2022-01-11 | 深圳飞骧科技股份有限公司 | Coupling circuit applied to low-frequency power amplifier |
| CN114567262A (en) * | 2022-01-25 | 2022-05-31 | 电子科技大学 | High-efficiency broadband radio frequency power amplifier |
| CN114172464B (en) * | 2022-02-09 | 2022-05-24 | 成都嘉纳海威科技有限责任公司 | Broadband harmonic suppression amplifier |
| CN114172464A (en) * | 2022-02-09 | 2022-03-11 | 成都嘉纳海威科技有限责任公司 | Broadband harmonic suppression amplifier |
| WO2024007728A1 (en) * | 2022-07-06 | 2024-01-11 | 深圳飞骧科技股份有限公司 | Matching circuit and power amplification circuit |
| CN116707462A (en) * | 2023-03-10 | 2023-09-05 | 振弦(苏州)微电子有限公司 | Medium-high frequency band PA and multimode multi-band PA chip suitable for 4G wireless communication |
| CN116707462B (en) * | 2023-03-10 | 2024-02-13 | 振弦(苏州)微电子有限公司 | Medium-high frequency band PA and multimode multi-band PA chip suitable for 4G wireless communication |
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