CN210429729U - 带电粒子束布置及扫描电子装置 - Google Patents

带电粒子束布置及扫描电子装置 Download PDF

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Publication number
CN210429729U
CN210429729U CN201921079893.8U CN201921079893U CN210429729U CN 210429729 U CN210429729 U CN 210429729U CN 201921079893 U CN201921079893 U CN 201921079893U CN 210429729 U CN210429729 U CN 210429729U
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China
Prior art keywords
charged particle
particle beam
pole piece
axial distance
magnetic
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Withdrawn - After Issue
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CN201921079893.8U
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English (en)
Chinese (zh)
Inventor
帕维尔·阿达梅克
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ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
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ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10Lenses
    • H01J37/14Lenses magnetic
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00Microscopes
    • G02B21/36Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
    • G02B21/361Optical details, e.g. image relay to the camera or image sensor
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00Microscopes
    • G02B21/02Objectives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/063Geometrical arrangement of electrodes for beam-forming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/073Electron guns using field emission, photo emission, or secondary emission electron sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10Lenses
    • H01J37/14Lenses magnetic
    • H01J37/141Electromagnetic lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/047Changing particle velocity
    • H01J2237/0473Changing particle velocity accelerating
    • H01J2237/04732Changing particle velocity accelerating with magnetic means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/047Changing particle velocity
    • H01J2237/0475Changing particle velocity decelerating
    • H01J2237/04753Changing particle velocity decelerating with magnetic means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/047Changing particle velocity
    • H01J2237/0475Changing particle velocity decelerating
    • H01J2237/04756Changing particle velocity decelerating with electrostatic means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/049Focusing means
    • H01J2237/0492Lens systems
    • H01J2237/04922Lens systems electromagnetic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/063Electron sources
    • H01J2237/06325Cold-cathode sources
    • H01J2237/06341Field emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/083Beam forming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10Lenses
    • H01J2237/14Lenses magnetic
    • H01J2237/1405Constructional details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10Lenses
    • H01J2237/14Lenses magnetic
    • H01J2237/1405Constructional details
    • H01J2237/1415Bores or yokes, i.e. magnetic circuit in general
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245Detection characterised by the variable being measured
    • H01J2237/24592Inspection and quality control of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • H01J2237/2817Pattern inspection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
    • H01J2237/31752Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31754Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201921079893.8U 2018-07-12 2019-07-11 带电粒子束布置及扫描电子装置 Withdrawn - After Issue CN210429729U (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/033,987 US10504684B1 (en) 2018-07-12 2018-07-12 High performance inspection scanning electron microscope device and method of operating the same
US16/033,987 2018-07-12

Publications (1)

Publication Number Publication Date
CN210429729U true CN210429729U (zh) 2020-04-28

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CN201921079893.8U Withdrawn - After Issue CN210429729U (zh) 2018-07-12 2019-07-11 带电粒子束布置及扫描电子装置
CN201910623676.9A Active CN110718433B (zh) 2018-07-12 2019-07-11 带电粒子束布置、其操作方法及扫描电子装置

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Country Link
US (1) US10504684B1 (https=)
EP (1) EP3594988B1 (https=)
JP (2) JP6826637B2 (https=)
KR (1) KR102147728B1 (https=)
CN (2) CN210429729U (https=)
TW (1) TWI712069B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110718433A (zh) * 2018-07-12 2020-01-21 Ict集成电路测试股份有限公司 带电粒子束布置、其操作方法及扫描电子装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11380511B2 (en) * 2020-03-24 2022-07-05 Fei Company Charged particle beam source
US20230197399A1 (en) * 2021-12-21 2023-06-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron microscope, electron source for electron microscope, and methods of operating an electron microscope
US12165831B2 (en) * 2022-05-31 2024-12-10 Kla Corporation Method and system of image-forming multi-electron beams
CN117113795B (zh) * 2023-10-23 2024-01-26 之江实验室 一种优化磁约束带电粒子成像系统参数的方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2541915A1 (de) * 1975-09-19 1977-03-31 Max Planck Gesellschaft Korpuskularstrahlenmikroskop mit ringzonensegmentabbildung
JPS5968158A (ja) * 1982-09-27 1984-04-18 Jeol Ltd 電子線装置
EP0242602B1 (de) * 1986-04-24 1993-07-21 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Elektrostatisch-magnetische-Linse für Korpuskularstrahlgeräte
US5146090A (en) * 1990-06-11 1992-09-08 Siemens Aktiengesellschaft Particle beam apparatus having an immersion lens arranged in an intermediate image of the beam
JP3156428B2 (ja) * 1993-03-15 2001-04-16 株式会社日立製作所 走査形電子顕微鏡
US5773841A (en) * 1995-01-13 1998-06-30 High Yield Technology, Inc. Self aligning vacuum seal assembly
DE19605855A1 (de) * 1996-02-16 1997-08-21 Act Advanced Circuit Testing Detektorobjektiv für Korpuskularstrahlgeräte
US5933273A (en) * 1997-06-11 1999-08-03 Mcdonnell Douglas Corporation Ultraviolet blocking coating and associated coated optical element
SG74599A1 (en) * 1997-09-27 2000-08-22 Inst Of Material Res & Enginee Portable high resolution scanning electron microscope column using permanent magnet electron lenses
JPH11250850A (ja) * 1998-03-02 1999-09-17 Hitachi Ltd 走査電子顕微鏡及び顕微方法並びに対話型入力装置
US6614026B1 (en) * 1999-04-15 2003-09-02 Applied Materials, Inc. Charged particle beam column
EP1100112A1 (en) * 1999-11-12 2001-05-16 Advantest Corporation Spectrometer objective for particle beam measuring system
EP1120809B1 (en) * 2000-01-27 2012-02-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Objective lens for a charged particle beam device
US6825475B2 (en) * 2002-09-19 2004-11-30 Applied Materials Israel, Ltd. Deflection method and system for use in a charged particle beam column
US6897442B2 (en) * 2003-04-25 2005-05-24 Applied Materials Israel, Ltd. Objective lens arrangement for use in a charged particle beam column
US7893406B1 (en) * 2005-06-29 2011-02-22 Hermes-Microvision, Inc. Electron gun with magnetic immersion double condenser lenses
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
US7825386B2 (en) * 2006-10-25 2010-11-02 Hermes-Microvision, Inc. System and method for a charged particle beam
DE102006059162B4 (de) * 2006-12-14 2009-07-09 Carl Zeiss Nts Gmbh Teilchenoptische Anordnung
WO2009147894A1 (ja) * 2008-06-05 2009-12-10 株式会社日立ハイテクノロジーズ イオンビーム装置
EP2170021B1 (en) * 2008-09-25 2015-11-04 ASML Netherlands B.V. Source module, radiation source and lithographic apparatus
US7960697B2 (en) * 2008-10-23 2011-06-14 Hermes-Microvision, Inc. Electron beam apparatus
US8101911B2 (en) * 2008-11-04 2012-01-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Method and device for improved alignment of a high brightness charged particle gun
US8094924B2 (en) * 2008-12-15 2012-01-10 Hermes-Microvision, Inc. E-beam defect review system
US8742342B2 (en) * 2009-11-06 2014-06-03 Hitachi High-Technologies Corporation Electron microscope
WO2011055376A1 (en) * 2009-11-09 2011-05-12 Tata Institute Of Fundamental Research Biological laser plasma x-ray point source
US8319192B2 (en) * 2010-08-24 2012-11-27 Hermes Microvision Inc. Charged particle apparatus
JP2012084491A (ja) * 2010-10-08 2012-04-26 Sadao Nomura 色収差も小さく抑えた球面収差補正電子顕微鏡
JP5364112B2 (ja) * 2011-01-25 2013-12-11 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP2014032943A (ja) * 2012-08-03 2014-02-20 Sadao Nomura エネルギー幅の小さい電子ビームを試料に照射する走査型電子顕微鏡。
EP2779205B1 (en) * 2013-03-15 2017-10-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High throughput scan deflector and method of manufacturing thereof
US9799484B2 (en) * 2014-12-09 2017-10-24 Hermes Microvision, Inc. Charged particle source
JP6177817B2 (ja) * 2015-01-30 2017-08-09 松定プレシジョン株式会社 荷電粒子線装置及び走査電子顕微鏡
US9633815B1 (en) * 2016-02-10 2017-04-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emitter for an electron beam, electron beam device and method for producing and operating an electron emitter
US9847208B1 (en) * 2016-08-10 2017-12-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron beam device, cold field emitter, and method for regeneration of a cold field emitter
CN207425790U (zh) * 2017-11-21 2018-05-29 聚束科技(北京)有限公司 一种低能扫描电子显微镜系统
US10504684B1 (en) * 2018-07-12 2019-12-10 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High performance inspection scanning electron microscope device and method of operating the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110718433A (zh) * 2018-07-12 2020-01-21 Ict集成电路测试股份有限公司 带电粒子束布置、其操作方法及扫描电子装置
CN110718433B (zh) * 2018-07-12 2021-02-26 Ict集成电路测试股份有限公司 带电粒子束布置、其操作方法及扫描电子装置

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Publication number Publication date
JP2020013790A (ja) 2020-01-23
US10504684B1 (en) 2019-12-10
JP6826637B2 (ja) 2021-02-03
EP3594988B1 (en) 2025-01-01
EP3594988A1 (en) 2020-01-15
JP7098766B2 (ja) 2022-07-11
TW202006779A (zh) 2020-02-01
CN110718433B (zh) 2021-02-26
JP2021064621A (ja) 2021-04-22
CN110718433A (zh) 2020-01-21
KR20200007726A (ko) 2020-01-22
TWI712069B (zh) 2020-12-01
KR102147728B1 (ko) 2020-08-25

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