CN209880590U

CN209880590U - Double-sided heat dissipation semiconductor IGBT pipe

Info

Publication number: CN209880590U
Application number: CN201921005765.9U
Authority: CN
Inventors: 陈微微; 林世科
Original assignee: Shenzhen Hongbang Semiconductor Co Ltd
Current assignee: Shenzhen Hongbang Semiconductor Co Ltd
Priority date: 2019-07-01
Filing date: 2019-07-01
Publication date: 2019-12-31
Anticipated expiration: 2029-07-01

Abstract

The utility model discloses a two-sided heat dissipation semiconductor IGBT pipe, including the semiconductor IGBT pipe, the heat-conducting layer is pasted respectively to the positive and negative of semiconductor IGBT pipe, and the heat-conducting layer that positive and negative pasted forms two-sided heat radiation structure on the semiconductor IGBT pipe, all is provided with the one deck insulating layer between semiconductor IGBT pipe and the heat-conducting layer, and the heat on the semiconductor IGBT pipe is passed through the insulating layer and is transmitted the heat dissipation for the heat-conducting layer, and the both sides of semiconductor IGBT pipe set up the connection foot more than one respectively. The utility model discloses a two-sided radiating mode, small electric current is done bigger, saves space and makes the air flow fast, and the heat dissipation is more effective, and is not fixed with the screw, and two-sided compressing tightly is just gone, saves manual work and material expense.

Description

Double-sided heat dissipation semiconductor IGBT pipe

Technical Field

The utility model relates to an electron field, concretely relates to two-sided heat dissipation semiconductor IGBT pipe.

Background

An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar junction Transistor) and MOS (Insulated Gate field effect Transistor), has the advantages of high input impedance and low conduction voltage drop, has low driving power and low saturation voltage, and is widely used as a switching device in the field of industrial control, especially in the field of frequency converters.

In daily life, the current of an original IGBT single tube is not large, heat dissipation is not good, burning is easy, only one side is used for heat dissipation, the current which is stressed due to small heat dissipation area is small, the function is single, and no other function exists.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the technical problem that a two-sided heat dissipation semiconductor IGBT pipe adopts two-sided heat radiation structure, can effectively solve not enough among the prior art.

The utility model discloses a realize through following technical scheme: the utility model provides a two-sided heat dissipation semiconductor IGBT pipe, includes the semiconductor IGBT pipe, and the heat-conducting layer is pasted respectively to the positive and negative of semiconductor IGBT pipe, and the heat-conducting layer that the positive and negative pasted forms two-sided heat radiation structure on the semiconductor IGBT pipe, all is provided with the one deck insulating layer between semiconductor IGBT pipe and the heat-conducting layer, and the heat on the semiconductor IGBT pipe is passed through the insulating layer and is transmitted the heat dissipation for the heat-conducting layer, and the both sides of semiconductor IGBT pipe set up the connection foot more.

According to the preferable technical scheme, the heat conduction layer is a pure copper heat conduction layer, the insulating layer is a ceramic insulating plate, the connecting pins are pure copper pins, and the semiconductor IGBT tube is provided with a chip.

Preferably, the at least one connection pin comprises G, C, E three pins arranged on one side of the semiconductor IGBT tube and four pins G1, E1, G2 and E2 arranged on the other side of the semiconductor IGBT tube.

The utility model has the advantages that: 1. the utility model discloses need not the screw fixation, two-sided compress tightly just, save manual work and material expense.

2. The utility model discloses small electric current is done bigger, saves space and makes the air flow fast, and the heat dissipation is more effective.

3. The utility model discloses economic use value is high saves the cost, and preceding converter will use 6 IGBT single tubes, the utility model discloses only with 3 LSKHBIGBT pipes just can.

4. Make the full-bridge scheme in the past and need use 4 IGBT single tubes, and use the utility model discloses as long as 2 accomplish the full-bridge scheme. The material cost is saved by half, and the process is simple and achieves the effect of getting twice the result with half the effort;

5. double-sided heat dissipation, low temperature and good heat dissipation effect.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

Fig. 1 is a schematic circuit diagram of the present invention;

FIG. 2 is a schematic front view of the present invention;

fig. 3 is a reverse sketch of the present invention.

Detailed Description

All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.

Any feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.

In the description of the present invention, it is to be understood that the terms "one end", "the other end", "the outside", "upper", "inside", "horizontal", "coaxial", "central", "end", "length", "outer end", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

Furthermore, in the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

The use of terms herein such as "upper," "above," "lower," "below," and the like in describing relative spatial positions is for the purpose of facilitating description to describe one element or feature's relationship to another element or feature as illustrated in the figures. The spatially relative positional terms may be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

In the present invention, unless otherwise explicitly specified or limited, the terms "set", "coupled", "connected", "penetrating", "plugging", and the like are to be understood in a broad sense, and may be, for example, fixedly connected, detachably connected, or integrated; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

As shown in fig. 1-3, the heat-conducting structure comprises a semiconductor IGBT tube, wherein heat-conducting layers are respectively attached to the front side and the back side of the semiconductor IGBT tube, the heat-conducting layers attached to the front side and the back side form a double-sided heat-radiating structure on the semiconductor IGBT tube, an insulating layer is arranged between the semiconductor IGBT tube and the heat-conducting layers, heat on the semiconductor IGBT tube is transferred to the heat-conducting layers through the insulating layers for heat radiation, and more than one connecting pin is respectively arranged on the two sides of.

In this embodiment, the heat conduction layer is a pure copper heat conduction layer, and the insulating layer ceramic insulation board, the connection pin is a pure copper pin, and the semiconductor IGBT tube has a chip, and the insulating layer adopts the ceramic insulation board, so has very insulating properties and heat conductivility.

In this embodiment, the at least one connection pin includes G, C, E three pins disposed on one side of the semiconductor IGBT, and G1, E1, G2, and E2 four pins disposed on the other side of the semiconductor IGBT.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that are not thought of through the creative work should be covered within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope defined by the claims.

Claims

1. The utility model provides a two-sided heat dissipation semiconductor IGBT pipe which characterized in that: the heat-conducting layer is pasted on the front side and the back side of the semiconductor IGBT tube respectively, the heat-conducting layer pasted on the front side and the back side forms a double-sided heat dissipation structure on the semiconductor IGBT tube, an insulating layer is arranged between the semiconductor IGBT tube and the heat-conducting layer, heat on the semiconductor IGBT tube is dissipated for the heat-conducting layer through the insulating layer, and more than one connecting pin is arranged on each of the two sides of the semiconductor IGBT tube.

2. The double-sided heat dissipation semiconductor IGBT tube according to claim 1, characterized in that: the heat-conducting layer is a pure copper heat-conducting layer, the insulating layer ceramic insulation board, the connecting pin is a pure copper pin, and the semiconductor IGBT tube is provided with a chip.

3. The double-sided heat dissipation semiconductor IGBT tube according to claim 1, characterized in that: the more than one connecting pins comprise G, C, E three pins arranged on one side of the semiconductor IGBT tube and four pins G1, E1, G2 and E2 arranged on the other side of the semiconductor IGBT tube.