CN209785916U - packaging structure of double-sided cooling power module - Google Patents
packaging structure of double-sided cooling power module Download PDFInfo
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- CN209785916U CN209785916U CN201920748999.6U CN201920748999U CN209785916U CN 209785916 U CN209785916 U CN 209785916U CN 201920748999 U CN201920748999 U CN 201920748999U CN 209785916 U CN209785916 U CN 209785916U
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- power device
- substrate
- dielectric material
- double
- power module
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Abstract
The utility model discloses a packaging structure of two-sided cooling power module, including bottom base plate and top base plate, be equipped with the drain electrode terminal on the bottom base plate, be equipped with source electrode terminal and gate pole terminal on the top base plate, be equipped with one deck dielectric material between bottom base plate and top base plate, be equipped with the cavity in the centre of this stage electric material, power device places in this cavity, fill insulating material between power device and the dielectric material, power device's top metal sheet is connected with the lower surface electricity of top base plate, power device's bottom metal sheet is connected with the upper surface electricity of bottom base plate, the upper surface of dielectric material bonds with the lower surface insulation of top base plate, the lower surface of dielectric material bonds with the upper surface insulation of bottom base plate. The utility model discloses a performance and stability of two-sided cooling improvement power module.
Description
Technical Field
The utility model belongs to the technical field of power electronics, in particular to packaging structure of two-sided cooling power module.
background
the conventional power module mainly uses a single-side cooling mode to dissipate heat generated by the power device. The power device is placed on the DBC or other substrates through soldering tin or other modes, the substrates are placed on the copper plate, the used power module is integrally placed on the radiator or the cold plate, the power device, the routing structure and the like are placed in silica gel or other dielectric materials, and heat generated by the power device can be led out to the radiating plate or the cold plate only through the DBC, the copper plate and the like at the lower part.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem that above-mentioned background art mentioned, the utility model provides a two-sided cooling power module's packaging structure realizes two-sided cooling, improves power module's performance and stability.
In order to realize the technical purpose, the utility model discloses a technical scheme does:
A packaging structure of a double-sided cooling power module comprises a bottom substrate and a top substrate, wherein a drain terminal is arranged on the bottom substrate, a source terminal and a gate terminal are arranged on the top substrate, a layer of dielectric material is arranged between the bottom substrate and the top substrate, a cavity is arranged in the middle of the layer of dielectric material, a power device is placed in the cavity, an insulating material is filled between the power device and the dielectric material, a top metal plate of the power device is electrically connected with the lower surface of the top substrate, a bottom metal plate of the power device is electrically connected with the upper surface of the bottom substrate, the upper surface of the dielectric material is in insulating bonding with the lower surface of the top substrate, the lower surface of the dielectric material is in insulating bonding with the upper surface of the bottom substrate, a source of the power device is electrically connected with the source terminal on the top substrate, and a gate of the power device, the drain of the power device is electrically connected to a drain terminal on the base substrate.
Based on the preferable scheme of the above technical solution, the bottom substrate and the top substrate are DCB plates or substrates containing insulating materials and conductive materials.
Based on the preferable scheme of the technical scheme, the bottom substrate and the top substrate respectively comprise three layers, and the bottom copper plating layer, the middle ceramic layer and the top copper plating layer are sequentially arranged from bottom to top.
Based on the preferable scheme of the technical scheme, the dielectric material is LTCC.
Based on the preferable scheme of the technical scheme, the insulating material between the power device and the dielectric material is silica gel or resin.
based on the preferable scheme of the technical scheme, the top metal plate of the power device is electrically connected with the lower surface of the top substrate and the bottom metal plate of the power device is electrically connected with the upper surface of the bottom substrate through the conductive link material; the source, drain and gate terminals on the power device are electrically connected with the source, drain and gate terminals on the two substrates through conductive link materials.
Based on the preferable scheme of the technical scheme, the conductive link material is a soldering tin material, micron silver paste, nano silver paste, micron copper paste or nano copper paste.
Based on the preferable scheme of the above technical solution, the upper surface of the dielectric material and the lower surface of the top substrate and the lower surface of the dielectric material and the upper surface of the bottom substrate are bonded by a viscous material with insulating property, and the viscous material is silica gel or resin.
Based on the preferable scheme of the technical scheme, the source terminal, the drain terminal and the gate terminal are made of high-conductivity heat-conducting materials, and the surfaces of the source terminal, the drain terminal and the gate terminal are plated with gold, silver, nickel or tin.
In a preferred embodiment of the present invention, the source, drain and gate terminals extend beyond the bottom and top substrates and are connected to an external circuit.
Adopt the beneficial effect that above-mentioned technical scheme brought:
The utility model has the characteristics of simple structure, convenient to use, preparation simple process etc, can realize two-sided cooling and reduce characteristics such as module parasitic inductance, can improve power module's performance and reliability.
Drawings
FIG. 1 is an internal schematic view of the present invention;
fig. 2 is an external schematic view of the present invention;
FIG. 3 is an internal side view of the present invention;
FIG. 4 is a circuit diagram illustrating etching of a bottom copper plating layer of the top substrate according to the present invention;
Fig. 5 is a circuit diagram of the etching of the top copper plating layer of the bottom substrate of the present invention.
Description of reference numerals: 1. plating a copper layer on the bottom of the bottom substrate; 2. a bottom substrate intermediate ceramic layer; 3. plating a copper layer on the top of the bottom substrate; 4. a dielectric material; 5. a power diode; 6. a power MOSFET; 7. an insulating filler material; 8. a source terminal; 9. a gate terminal; 10. a drain terminal; 11. a conductive link material of the power device and the bottom substrate; 12. the power device and the conductive link material of the top and bottom substrates; 13. an insulating adhesive material; 14. plating a copper layer on the bottom of the top substrate; 15. a top substrate intermediate ceramic layer; 16. the top substrate is plated with a copper layer on top.
Detailed Description
The technical solution of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1-3, the present invention provides a package structure of a double-sided cooling power module, which comprises a bottom substrate and a top substrate, a drain terminal 10 is disposed on the bottom substrate, a source terminal 8 and a gate terminal 9 are disposed on the top substrate, a layer of dielectric material 4 is disposed between the bottom substrate and the top substrate, a cavity is disposed in the middle of the layer of dielectric material 4, a power device (in this embodiment, the power device includes a power diode 5 and a power MOSFET6) is disposed in the cavity, an insulating material 7 is filled between the power device and the dielectric material 4, a top metal plate of the power device is electrically connected with a lower surface of the top substrate, a bottom metal plate of the power device is electrically connected with an upper surface of the bottom substrate, an upper surface of the dielectric material 4 is bonded with a lower surface of the top substrate in an insulating manner, the lower surface of the dielectric material 4 is bonded to the upper surface of the base substrate in an insulating manner, the source of the power device is electrically connected to a source terminal 8 on the top substrate, the gate of the power device is electrically connected to a gate terminal 9 on the top substrate, and the drain of the power device is electrically connected to a drain terminal 10 on the base substrate.
The bottom substrate and the top substrate are DCB plates or substrates comprising an insulating material and a conductive material. In this embodiment, the bottom substrate comprises, in order from bottom to top, a bottom copper plating layer 1, an intermediate ceramic layer 2 and a top copper plating layer 3, and the top substrate also comprises, in order from bottom to top, a bottom copper plating layer 14, an intermediate ceramic layer 15 and a top copper plating layer 16. The bottom copper plate etch circuit of the top substrate is shown in fig. 4 and the top copper plate etch circuit of the bottom substrate is shown in fig. 5.
in this embodiment, the dielectric material is LTCC or a material with similar properties.
In the present embodiment, the insulating material 7 between the power device and the dielectric material 4 is silicon gel or resin or a polymer material with similar insulating properties.
In the present embodiment, the top metal plate of the power device and the lower surface of the top substrate and the bottom metal plate of the power device and the upper surface of the bottom substrate are electrically connected through the conductive link materials 11 and 12; the source, drain and gate terminals on the power device are electrically connected to the source terminal 8, drain terminal 10 and gate terminal 9 on the two substrates by conductive link material. The conductive link material is a soldering tin material, micron silver paste, nanometer silver paste, micron copper paste or nanometer copper paste.
In this embodiment, the upper surface of the dielectric material is bonded to the lower surface of the top substrate and the lower surface of the dielectric material is bonded to the upper surface of the bottom substrate by an adhesive material 13 having insulating properties, and the adhesive material 13 is a silicone or a resin.
In the present embodiment, the source terminal 8, the drain terminal 10 and the gate terminal 9 are made of a highly conductive and thermally conductive material, and the surfaces thereof are plated with gold, silver, nickel or tin. The source terminal 8, drain terminal 10 and gate terminal 9 extend beyond the bottom and top substrates and are connected to external circuitry.
The utility model discloses in, the produced heat of power device can outwards give off by top base plate and bottom base plate simultaneously, promotes power module's heat-sinking capability by a wide margin to the performance and the stability of module have been improved.
Furthermore, the utility model discloses it carries out the lead wire of circuit connection with the base plate to remove the power chip, and adopts the source electrode and the drain electrode of direct base plate connection chip, therefore the parasitic inductance of module compares in traditional wire bonding module and wants greatly reduced.
The embodiment is only for explaining the technical thought of the utility model, can not limit with this the utility model discloses a protection scope, all according to the utility model provides a technical thought, any change of doing on technical scheme basis all falls into the utility model discloses within the protection scope.
Claims (10)
1. A packaging structure of a double-sided cooling power module is characterized in that: comprises a bottom substrate having a drain terminal thereon and a top substrate having a source terminal and a gate terminal thereon, a layer of dielectric material is arranged between the bottom substrate and the top substrate, a hollow hole is arranged in the middle of the layer of dielectric material, the power device is placed in the hollow hole, an insulating material is filled between the power device and the dielectric material, a top metal plate of the power device is electrically connected with the lower surface of the top substrate, a bottom metal plate of the power device is electrically connected with the upper surface of the bottom substrate, the upper surface of the dielectric material is in insulated bonding with the lower surface of the top substrate, the lower surface of the dielectric material is in insulated bonding with the upper surface of the bottom substrate, a source electrode of the power device is electrically connected with a source electrode terminal on the top substrate, a gate electrode of the power device is electrically connected with a gate electrode terminal on the top substrate, and a drain electrode of the power device is electrically connected with a drain electrode terminal.
2. The package structure of the double-sided cooling power module according to claim 1, characterized in that: the bottom substrate and the top substrate are DCB plates or substrates comprising an insulating material and a conductive material.
3. The package structure of the double-sided cooling power module according to claim 2, characterized in that: the bottom substrate and the top substrate respectively comprise three layers, namely a bottom copper plating layer, a middle ceramic layer and a top copper plating layer from bottom to top in sequence.
4. The package structure of the double-sided cooling power module according to claim 1, characterized in that: the dielectric material is LTCC.
5. The package structure of the double-sided cooling power module according to claim 1, characterized in that: the insulating material between the power device and the dielectric material is silica gel or resin.
6. The package structure of the double-sided cooling power module according to claim 1, characterized in that: the top metal plate of the power device is electrically connected with the lower surface of the top substrate and the bottom metal plate of the power device is electrically connected with the upper surface of the bottom substrate through a conductive link material; the source, drain and gate terminals on the power device are electrically connected with the source, drain and gate terminals on the two substrates through conductive link materials.
7. The package structure of the double-sided cooling power module according to claim 6, wherein: the conductive link material is a soldering tin material, micron silver paste, nanometer silver paste, micron copper paste or nanometer copper paste.
8. The package structure of the double-sided cooling power module according to claim 1, characterized in that: the upper surface of the dielectric material is bonded with the lower surface of the top substrate, and the lower surface of the dielectric material is bonded with the upper surface of the bottom substrate through a viscous material with insulating property, wherein the viscous material is silica gel or resin.
9. The package structure of the double-sided cooling power module according to claim 1, characterized in that: the source terminal, the drain terminal and the gate terminal are made of high-conductivity heat-conducting materials, and the surfaces of the source terminal, the drain terminal and the gate terminal are plated with gold, silver, nickel or tin.
10. The package structure of the double-sided cooling power module according to claim 1, characterized in that: the source, drain and gate terminals extend beyond the bottom and top substrates and are connected to external circuitry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920748999.6U CN209785916U (en) | 2019-05-23 | 2019-05-23 | packaging structure of double-sided cooling power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920748999.6U CN209785916U (en) | 2019-05-23 | 2019-05-23 | packaging structure of double-sided cooling power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209785916U true CN209785916U (en) | 2019-12-13 |
Family
ID=68805613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920748999.6U Expired - Fee Related CN209785916U (en) | 2019-05-23 | 2019-05-23 | packaging structure of double-sided cooling power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209785916U (en) |
-
2019
- 2019-05-23 CN CN201920748999.6U patent/CN209785916U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191213 |