CN209626252U - A kind of light emitting diode with sterilization - Google Patents
A kind of light emitting diode with sterilization Download PDFInfo
- Publication number
- CN209626252U CN209626252U CN201920727558.8U CN201920727558U CN209626252U CN 209626252 U CN209626252 U CN 209626252U CN 201920727558 U CN201920727558 U CN 201920727558U CN 209626252 U CN209626252 U CN 209626252U
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light emitting
- light
- aluminum substrate
- aluminium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001954 sterilising effect Effects 0.000 title claims abstract description 15
- 238000004659 sterilization and disinfection Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910017083 AlN Inorganic materials 0.000 claims abstract description 20
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010453 quartz Substances 0.000 claims abstract description 14
- 230000005855 radiation Effects 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 12
- 239000000741 silica gel Substances 0.000 claims abstract description 4
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 4
- 239000000084 colloidal system Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 7
- 230000000844 anti-bacterial effect Effects 0.000 abstract description 6
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- Led Device Packages (AREA)
Abstract
The utility model discloses a kind of light emitting diodes with sterilization, including aluminum substrate, pin frame is connected on aluminum substrate, aluminium nitride light-emitting diode chip for backlight unit is provided on the upper surface of aluminum substrate, it is additionally provided on the upper surface of aluminum substrate and stacks silicon reflector, stack the side that aluminium nitride light-emitting diode chip for backlight unit is arranged in silicon reflector, it stacks and is fixed with circular quartz lens on the upside of silicon reflector, UV resin lens are provided on the upside of circular quartz lens, the position that aluminum substrate is contacted with aluminium nitride light-emitting diode chip for backlight unit offers through-hole, graphene heat-conducting block is provided with by heat conductive silica gel in through-hole, insulating radiation block is fixed on the downside of graphene heat-conducting block.The utility model effectively increases the light ejection efficiency of aluminium nitride light-emitting diode chip for backlight unit, and then improve the light efficiency of the light emitting diode, so that the light emitting diode has good bactericidal effect, it has been obviously improved the heat dissipation effect of the light emitting diode, has extended the service life of the light emitting diode.
Description
Technical field
The utility model relates to LED technology field, specially a kind of light emitting diode with sterilization.
Background technique
Light emitting diode is referred to as LED.It is made of the compound containing gallium (Ga), arsenic (As), phosphorus (P), nitrogen (N) etc..Work as electricity
Visible light can be given off when son is with hole-recombination, thus can be used to that light emitting diode is made.
The light of the light emitting diode of existing sterilizing unit often its chip sides easily scatters, and light ejection efficiency is low, light
It is poor to imitate, and bactericidal effect is bad, and heat dissipation effect is poor, seriously affects the service life of light emitting diode.
Utility model content
The purpose of this utility model is to provide a kind of light emitting diodes with sterilization, effectively increase aluminium nitride and shine
The light ejection efficiency of diode chip for backlight unit, and then the light efficiency of the light emitting diode is improved, so that the light emitting diode has well
Bactericidal effect, be obviously improved the heat dissipation effect of the light emitting diode, extended the service life of the light emitting diode, with solve
The problems mentioned above in the background art.
To achieve the above object, the utility model provides the following technical solutions:
A kind of light emitting diode with sterilization, including aluminum substrate are connected with pin frame, the aluminium base on the aluminum substrate
It is provided with aluminium nitride light-emitting diode chip for backlight unit on the upper surface of plate, it is reflective that stacking silicon is additionally provided on the upper surface of the aluminum substrate
Cup, the side for stacking silicon reflector and the aluminium nitride light-emitting diode chip for backlight unit being arranged in are described to stack the upper of silicon reflector
Side is fixed with circular quartz lens, the aluminum substrate, the space for stacking silicon reflector and circular quartz lens composition
It is interior to be filled with epoxy resin packing colloid, UV resin lens are provided on the upside of the circular quartz lens；
The position that the aluminum substrate is contacted with the aluminium nitride light-emitting diode chip for backlight unit offers through-hole, leads in the through-hole
It crosses heat conductive silica gel and is provided with graphene heat-conducting block, be fixed with insulating radiation block on the downside of the graphene heat-conducting block.
Preferably, the inner sidewall for stacking silicon reflector is horizontal by 30 ° of -60 ° of angles.
Preferably, the diameter of the circular quartz lens is bigger than the outer diameter for stacking silicon reflector.
Preferably, the insulating radiation block is the ceramic block of integral type.
Preferably, multiple radiating fins are provided on the downside of the insulating radiation block.
Preferably, the UV resin lens are hemispherical.
Preferably, the UV resin lens are hemispherical, and are opened up at the top of it fluted.
Compared with prior art, the utility model has the beneficial effects that
1, silicon reflector is stacked by increasing, in order to which the light issued to aluminium nitride light-emitting diode chip for backlight unit side carries out
Reflection, effectively increases the light ejection efficiency of aluminium nitride light-emitting diode chip for backlight unit, and then improve the light efficiency of the light emitting diode,
So that the light emitting diode has good bactericidal effect；
2, thermally conductive by the progress of graphene heat-conducting block, then heat is shed by insulating radiation block, it has been obviously improved the hair
The heat dissipation effect of optical diode extends the service life of the light emitting diode.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of one embodiment of the utility model；
Fig. 2 is the schematic cross-sectional view of one embodiment of the utility model；
Fig. 3 is the schematic cross-sectional view of another embodiment of the utility model.
In figure: 1, aluminum substrate；2, pin frame；3, aluminium nitride light-emitting diode chip for backlight unit；4, silicon reflector is stacked；5, round stone
English lens；6, epoxy resin packing colloid；7, UV resin lens；8, through-hole；9, graphene heat-conducting block；10, insulating radiation block；
11, radiating fin；12, groove.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Embodiment 1
Fig. 1 and Fig. 2 are please referred to, the utility model provides a kind of technical solution:
A kind of light emitting diode with sterilization, including aluminum substrate 1 are connected with pin frame 2 on the aluminum substrate 1, described
Aluminium nitride light-emitting diode chip for backlight unit 3 is provided on the upper surface of aluminum substrate 1, the ultraviolet light that 254nm can be emitted after energization is killed
Bacterium is additionally provided on the upper surface of the aluminum substrate 1 and stacks silicon reflector 4, and the setting of stackings silicon reflector 4 is in the nitridation
The side of aluminium light-emitting diode chip for backlight unit 3, the upside for stacking silicon reflector 4 are fixed with circular quartz lens 5, the aluminum substrate
1, epoxy resin packing colloid 6, institute are filled in the space for stacking silicon reflector 4 and the circular quartz lens 5 composition
The upside for stating circular quartz lens 5 is provided with UV resin lens 7, silicon reflector 4 is stacked by increasing, in order to send out aluminium nitride
The light that 3 side of luminous diode chip issues is reflected, and the light for effectively increasing aluminium nitride light-emitting diode chip for backlight unit 3 draws effect
Rate, and then the light efficiency of the light emitting diode is improved, so that the light emitting diode has good bactericidal effect.
The position that the aluminum substrate 1 is contacted with the aluminium nitride light-emitting diode chip for backlight unit 3 offers through-hole 8, the through-hole 8
Interior that heat conductive silica gel is provided with graphene heat-conducting block 9, the downside of the graphene heat-conducting block 9 is fixed with insulating radiation block 10,
It is carried out by graphene heat-conducting block 9 thermally conductive, then heat is shed by insulating radiation block 10, be obviously improved the light emitting diode
Heat dissipation effect, extend the service life of the light emitting diode.
Specifically, it is described stack silicon reflector 4 inner sidewall horizontal by 30 ° of -60 ° of angles so that can more preferable Horizon
Row reflection light.
Specifically, the diameter of the circular quartz lens 5 is bigger than the outer diameter for stacking silicon reflector 4, so that round stone
English lens 5 can preferably protect UV resin lens.
Specifically, the insulating radiation block 10 is the ceramic block of integral type, the insulation of the insulating radiation block 10 of ceramic material
Performance is good, high temperature resistant, long service life, and heat conduction efficiency is good.
Specifically, the downside of the insulating radiation block 10 is provided with multiple radiating fins 11, insulation can be further increased and dissipated
The radiating efficiency of heat block 10.
Specifically, the UV resin lens 7 are hemispherical, the light efficiency of the light emitting diode can be effectively increased.
Embodiment 2
Referring to Fig. 3, difference from example 1 is that the UV resin lens 7 are hemispherical, and its top opens up
Fluted 12, the light efficiency of the light emitting diode can be further increased by groove 12.
Structural principle: stacking silicon reflector 4 by increasing, in order to issue to 3 side of aluminium nitride light-emitting diode chip for backlight unit
Light reflected, effectively increase the light ejection efficiency of aluminium nitride light-emitting diode chip for backlight unit 3, so improve this shine two
The light efficiency of pole pipe, so that the light emitting diode has good bactericidal effect；It is carried out thermally conductive, then led to by graphene heat-conducting block 9
It crosses insulating radiation block 10 heat sheds, has been obviously improved the heat dissipation effect of the light emitting diode, has extended the light emitting diode
Service life.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (7)
1. a kind of light emitting diode with sterilization, including aluminum substrate (1), it is characterised in that: be connected on the aluminum substrate (1)
Pin frame (2) is provided with aluminium nitride light-emitting diode chip for backlight unit (3) on the upper surface of the aluminum substrate (1), the aluminum substrate (1)
Upper surface on be additionally provided with and stack silicon reflector (4), the stackings silicon reflector (4) setting is in the aluminium nitride light-emitting diodes
The side of tube chip (3) is fixed with circular quartz lens (5) on the upside of the stacking silicon reflector (4), the aluminum substrate (1),
Epoxy resin packing colloid is filled in the space for stacking silicon reflector (4) and the circular quartz lens (5) composition
(6), UV resin lens (7) are provided on the upside of the circular quartz lens (5)；
The position that the aluminum substrate (1) contacts with the aluminium nitride light-emitting diode chip for backlight unit (3) offers through-hole (8), described logical
It is provided with graphene heat-conducting block (9) in hole (8) by heat conductive silica gel, is fixed with insulation on the downside of the graphene heat-conducting block (9)
Radiating block (10).
2. a kind of light emitting diode with sterilization according to claim 1, it is characterised in that: the stacking silicon reflector
(4) inner sidewall is horizontal by 30 ° of -60 ° of angles.
3. a kind of light emitting diode with sterilization according to claim 1, it is characterised in that: the circular quartz lens
(5) diameter is bigger than the outer diameter for stacking silicon reflector (4).
4. a kind of light emitting diode with sterilization according to claim 1, it is characterised in that: the insulating radiation block
It (10) is the ceramic block of integral type.
5. a kind of light emitting diode with sterilization according to claim 1, it is characterised in that: the insulating radiation block
(10) multiple radiating fins (11) are provided on the downside of.
6. a kind of light emitting diode with sterilization according to claim 1, it is characterised in that: the UV resin lens
It (7) is hemispherical.
7. a kind of light emitting diode with sterilization according to claim 1, it is characterised in that: the UV resin lens
It (7) is hemispherical, and its top opens up fluted (12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920727558.8U CN209626252U (en) | 2019-05-24 | 2019-05-24 | A kind of light emitting diode with sterilization |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920727558.8U CN209626252U (en) | 2019-05-24 | 2019-05-24 | A kind of light emitting diode with sterilization |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209626252U true CN209626252U (en) | 2019-11-12 |
Family
ID=68443112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920727558.8U Expired - Fee Related CN209626252U (en) | 2019-05-24 | 2019-05-24 | A kind of light emitting diode with sterilization |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209626252U (en) |
-
2019
- 2019-05-24 CN CN201920727558.8U patent/CN209626252U/en not_active Expired - Fee Related
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| GR01 | Patent grant | ||
| PP01 | Preservation of patent right | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20200511 Granted publication date: 20191112 |
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| PD01 | Discharge of preservation of patent | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20230110 Granted publication date: 20191112 |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191112 |