CN205680703U - A kind of high light efficiency LED - Google Patents
A kind of high light efficiency LED Download PDFInfo
- Publication number
- CN205680703U CN205680703U CN201620575065.3U CN201620575065U CN205680703U CN 205680703 U CN205680703 U CN 205680703U CN 201620575065 U CN201620575065 U CN 201620575065U CN 205680703 U CN205680703 U CN 205680703U
- Authority
- CN
- China
- Prior art keywords
- reflector
- heat
- high light
- gallium nitride
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The utility model discloses a kind of high light efficiency LED, include chip, substrate, reflector and for sealing the epoxy resin layer of reflector；Described chip is located at the bottom of reflector；The bottom of described reflector is connected with substrate；Described reflector is provided with multiple for making the light being sent by chip produce irreflexive fin；The top of described epoxy resin layer is provided with fluorescent material；Described chip includes Si substrate；It is sequentially provided with cushion, undoped gallium nitride layer, n-type gallium nitride layer, volume sublayer, p-type gallium nitride layer, p-type gallium nitride layer and contact layer on described Si substrate.Owing to reflector is provided with multiple so that light produces irreflexive fin so that operationally, light is radiated on reflector and can produce multiple reflections, and can produce uniform illumination effect after the light of multiple reflections penetrates；By fluorescent material is arranged on the top of epoxy resin layer, the thermal diffusivity of LED can be effectively improved, add luminous efficiency.
Description
Technical field
The utility model relates to LED technology field, is specifically related to a kind of high light efficiency LED.
Background technology
LED is one of current most popular light fixture, has the advantages such as energy-conservation, life-span length；Existing white light LEDs, greatly
Majority all realizes quality white light by blue chip penetration phosphor；And the principle of this LED is first by blue chip
After sending blue light, light, after the reflection of reflector, enters fluorescent material, sends white light after blue light penetration phosphor；And it is this
The problem that LED exists non-uniform light；Simultaneously as be that fluorescent material is evenly provided on epoxy resin layer in current structure
On, due to the poor radiation of fluorescent material, the operating efficiency causing LED reduces.
Content of the invention
The purpose of this utility model is for above-mentioned deficiency of the prior art, provides a kind of high light efficiency LED.
For achieving the above object, concrete scheme of the present utility model is as follows: a kind of high light efficiency LED, includes chip, base
Plate, reflector and for sealing the epoxy resin layer of reflector；Described chip is located at the bottom of reflector；Described reflector
Bottom is connected with substrate；
Described reflector is provided with multiple for making the light being sent by chip produce irreflexive fin；
The top of described epoxy resin layer is provided with fluorescent material；
Described chip includes substrate；It is sequentially provided with cushion, undoped gallium nitride layer, N-shaped gallium nitride on described substrate
Layer, volume sublayer, p-type aluminum gallium nitride, p-type gallium nitride layer and contact layer.
The utility model is further arranged to, and described substrate includes the first heat conduction elargol, heat-conducting plate and the second heat conduction
Elargol；One end of described heat-conducting plate is connected with reflector by the first heat conduction elargol；The other end of described heat-conducting plate and second is led
Hot elargol connects.
The utility model is further arranged to, and described LED encapsulation structure also includes heat abstractor；Described heat abstractor leads to
Cross the second heat conduction elargol to be connected with heat-conducting plate.
The utility model is further arranged to, and described heat abstractor is provided with multiple radiating fin；Adjacent two radiating fins
Spacing equal.
The utility model is further arranged to, and described heat-conducting plate is provided with high heat conduction ring.
The utility model is further arranged to, and described heat-conducting plate is provided with louvre.
The utility model is further arranged to, and the spacing of adjacent two described fins is equal.
The utility model is further arranged to, and described contact layer is connected with p-electrode, described n-type gallium nitride layer is connected with n electricity
Pole.
The beneficial effects of the utility model:
After chip operation emits beam, owing to reflector is provided with multiple so that light produces irreflexive fin so that
Operationally, light is radiated on reflector and can produce multiple reflections, and can produce after the light of multiple reflections penetrates
Raw uniform illumination effect；By fluorescent material is arranged on the top of epoxy resin layer, the heat radiation of LED can be effectively improved
Property, thus add the luminous efficiency of LED.
Brief description
The utility model is described in further detail to utilize accompanying drawing, but the embodiment in accompanying drawing does not constitute to of the present utility model
Any restriction, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to following attached
Figure obtains other accompanying drawing.
Fig. 1 is the structural representation of the utility model chip；
Fig. 2 is structural representation of the present utility model；
Fig. 1 to Fig. 2 description of reference numerals:
1-chip；11-Si substrate；12-cushion；13-undoped gallium nitride layer；14-n type gallium nitride layer；15-Multiple-quantum
Layer；16-p type gallium nitride layer；17-p type gallium nitride layer；18-contact layer；2-reflector；21-fin；3-epoxy resin layer；31-
Fluorescent material；41-the first heat conduction elargol；42-the second heat conduction elargol；5-heat-conducting plate；51-height heat conduction ring；52-louvre；6-dispels the heat
Fin；71-p electrode；72-n electrode.
Detailed description of the invention
With the following Examples the utility model is further described.
As shown in Figure 1 to Figure 2, a kind of high light efficiency LED described in the present embodiment, include chip the 1st, substrate, reflector 2 with
And for sealing the epoxy resin layer 3 of reflector 2；Described chip 1 is located at the bottom of reflector 2；The bottom of described reflector 2 with
Substrate connects；Described reflector 2 is provided with multiple for making the light being sent by chip 1 produce irreflexive fin 21；Described epoxy
The top of resin bed 3 is provided with fluorescent material 31.Described chip includes Si substrate 11；It is sequentially provided with cushion on described Si substrate 11
12nd, undoped gallium nitride layer the 13rd, n-type gallium nitride layer the 14th, volume sublayer the 15th, p-type gallium nitride layer the 16th, p-type gallium nitride layer 17 and
Contact layer 18.Described contact layer 18 is connected with p-electrode the 71st, described n-type gallium nitride layer 14 and is connected with n-electrode 72.Specifically, substrate
For the position of fixation reflex cup 2 and chip 1, after chip 1 work emits beam, owing to the inwall of reflector 2 is provided with many
Individual so that light produces irreflexive fin 21 so that operationally, light be radiated at can produce on the inwall of reflector 2 many
Secondary reflection, and uniform illumination effect can be produced after the light of multiple reflections penetrates；By with epoxy resin layer 3 by core
Piece 1 is packaged with reflector 2, can protect LED internal structure, outgoing after the light convergence simultaneously can reflected reflector 2；
Compared to traditional, fluorescent material 31 is evenly provided on epoxy resin layer 3, due to the poor radiation of fluorescent material 31, causes
The operating efficiency of LED reduces, and the present embodiment, by fluorescent material 31 is arranged on the top of epoxy resin layer 3, can carry effectively
The high thermal diffusivity of LED, thus add the luminous efficiency of LED；Owing to Si substrate 11 is easily formed when in use without determining
The SixNy layer of shape, leverages the luminous efficiency of LED, therefore by being sequentially provided with cushion the 12nd, undoped p on Si substrate 11
Gallium nitride layer the 13rd, n-type gallium nitride layer the 14th, volume sublayer the 15th, p-type gallium nitride layer the 16th, p-type gallium nitride layer 17 and contact layer 18 energy
Enough prevent epitaxial wafer from forming SixNy layer, LED is played a protective role.
A kind of high light efficiency LED described in the present embodiment, described substrate include the first heat conduction elargol the 41st, heat-conducting plate 5 and
Second heat conduction elargol 42；One end of described heat-conducting plate 5 is connected with reflector 2 by the first heat conduction elargol 41；Described heat-conducting plate 5
The other end and the second heat conduction elargol 42 connect.By arranging the first heat conduction elargol the 41st, heat-conducting plate 5 and the second heat conduction elargol 42 energy
Enough strengthen the heat dispersion of chip 1, improve the luminous efficiency of LED.
A kind of high light efficiency LED described in the present embodiment, described LED encapsulation structure also includes heat abstractor；Described heat radiation
Device is connected with heat-conducting plate 5 by the second heat conduction elargol 42.The heat dispersion of chip 1 can be strengthened by arranging heat abstractor,
Improve the luminous efficiency of LED.
A kind of high light efficiency LED described in the present embodiment, described heat abstractor is provided with multiple radiating fin 6；Adjacent two dissipate
The spacing of hot fin 6 is equal.Can obtain according to experiment, the thermal diffusivity of chip 1 can be strengthened by spaced set radiating fin 6
Can, improve the luminous efficiency of LED.
A kind of high light efficiency LED described in the present embodiment, described heat-conducting plate 5 is provided with high heat conduction ring 51.By at heat-conducting plate 5
On high heat conduction ring 51 is set, it is possible to increase the thermal conductivity of heat-conducting plate 5, thus accelerate the heat radiation of chip 1, improve the luminescence of LED
Efficiency.
A kind of high light efficiency LED described in the present embodiment, described heat-conducting plate 5 is provided with louvre 52.By on heat-conducting plate 5
Louvre 52 is set, it is possible to increase the thermal diffusivity of heat-conducting plate 5, thus accelerates the heat radiation of chip 1, improve the luminous efficiency of LED.
A kind of high light efficiency LED described in the present embodiment, the spacing of adjacent two described fins 21 is equal.Can by experiment
, by spaced set fin 21, light can be conducive to produce diffusing reflection so that emergent light is more uniform.
Last it should be noted that, above example is only in order to illustrating the technical solution of the utility model, rather than to this reality
With the restriction of novel protected scope, although having made to explain to the utility model with reference to preferred embodiment, this area general
Logical it will be appreciated by the skilled person that the technical scheme of utility model can be modified or equivalent, without deviating from this reality
Spirit and scope by new technique scheme.
Claims (8)
1. a high light efficiency LED, it is characterised in that: include chip (1), substrate, reflector (2) and be used for sealing reflector
(2) epoxy resin layer (3)；Described chip (1) is located at the bottom of reflector (2)；The bottom of described reflector (2) is with substrate even
Connect；Described reflector (2) is provided with multiple for making the light being sent by chip (1) produce irreflexive fin (21)；Described epoxy
The top of resin bed (3) is provided with fluorescent material (31)；
Described chip (1) includes Si substrate (11)；It is sequentially provided with cushion (12), undoped p nitridation on described Si substrate (11)
Gallium layer (13), n-type gallium nitride layer (14), volume sublayer (15), p-type gallium nitride layer (16), p-type gallium nitride layer (17) and contact
Layer (18).
2. a kind of high light efficiency LED according to claim 1, it is characterised in that: described substrate includes the first heat conduction elargol
(41), heat-conducting plate (5) and the second heat conduction elargol (42)；One end of described heat-conducting plate (5) by the first heat conduction elargol (41) with
Reflector (2) connects；The other end of described heat-conducting plate (5) and the second heat conduction elargol (42) connect.
3. a kind of high light efficiency LED according to claim 2, it is characterised in that: also include heat abstractor；Described heat radiation dress
Put and be connected with heat-conducting plate (5) by the second heat conduction elargol (42).
4. a kind of high light efficiency LED according to claim 3, it is characterised in that: described heat abstractor is provided with multiple radiating fin
Piece (6)；The spacing of adjacent two radiating fins (6) is equal.
5. a kind of high light efficiency LED according to claim 2, it is characterised in that: described heat-conducting plate (5) is provided with high heat conduction ring
(51).
6. a kind of high light efficiency LED according to claim 2, it is characterised in that: described heat-conducting plate (5) is provided with louvre
(52).
7. a kind of high light efficiency LED according to claim 1, it is characterised in that: the spacing of adjacent two described fins (21)
Equal.
8. a kind of high light efficiency LED according to claim 1, it is characterised in that: described contact layer (18) is connected with p-electrode
(71), described n-type gallium nitride layer (14) is connected with n-electrode (72).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620575065.3U CN205680703U (en) | 2016-06-13 | 2016-06-13 | A kind of high light efficiency LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620575065.3U CN205680703U (en) | 2016-06-13 | 2016-06-13 | A kind of high light efficiency LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205680703U true CN205680703U (en) | 2016-11-09 |
Family
ID=57433039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620575065.3U Active CN205680703U (en) | 2016-06-13 | 2016-06-13 | A kind of high light efficiency LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205680703U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106906764A (en) * | 2017-01-25 | 2017-06-30 | 东莞产权交易中心 | A kind of road cone |
| CN113410372A (en) * | 2021-06-17 | 2021-09-17 | 中国科学院半导体研究所 | Light-emitting device packaging structure |
-
2016
- 2016-06-13 CN CN201620575065.3U patent/CN205680703U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106906764A (en) * | 2017-01-25 | 2017-06-30 | 东莞产权交易中心 | A kind of road cone |
| CN113410372A (en) * | 2021-06-17 | 2021-09-17 | 中国科学院半导体研究所 | Light-emitting device packaging structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9217544B2 (en) | LED based pedestal-type lighting structure | |
| TW200423431A (en) | Semiconductor light-emitting device | |
| TW201108471A (en) | Lighting devices with discrete lumiphor-bearing regions on remote surfaces thereof | |
| TW201145624A (en) | Light emitting device | |
| JP2012248553A (en) | Light-emitting device and luminaire using the same | |
| WO2014040412A1 (en) | Led packaging structure | |
| CN205680703U (en) | A kind of high light efficiency LED | |
| CN102593304A (en) | High-power light-emitting diode (LED) light using ceramic for radiating | |
| CN203192852U (en) | Led packaging structure | |
| CN202100964U (en) | LED (light emitting diode) energy-saving lamp tube with wide spectrum | |
| CN201887075U (en) | Led | |
| CN205680701U (en) | A kind of high light efficiency LED encapsulating structure | |
| CN210837759U (en) | LED integrated chip | |
| CN108019630B (en) | High-power LED bulb | |
| CN209298156U (en) | A kind of LED light PCB light source board group part | |
| CN205488207U (en) | Emitting diode structure of integrated encapsulation of chip on board | |
| CN207880542U (en) | Projecting Lamp | |
| CN206112536U (en) | Thermoelectric separation light -emitting diode (LED) | |
| KR20110056704A (en) | Light emitting device package | |
| CN111106099A (en) | High-power COB heat dissipation packaging structure | |
| TW201138166A (en) | LED light emitting diode with high brightness and fast heat absorption and manufacturing method thereof | |
| CN220106576U (en) | High-performance ceramic-based LED device | |
| CN108006489B (en) | Light projector | |
| CN211980614U (en) | LED light source for solar cell light processing | |
| CN209626252U (en) | A kind of light emitting diode with sterilization |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |