CN108019630B - High-power LED bulb - Google Patents
High-power LED bulb Download PDFInfo
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- CN108019630B CN108019630B CN201711216237.3A CN201711216237A CN108019630B CN 108019630 B CN108019630 B CN 108019630B CN 201711216237 A CN201711216237 A CN 201711216237A CN 108019630 B CN108019630 B CN 108019630B
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000011049 filling Methods 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 97
- 239000000741 silica gel Substances 0.000 claims description 97
- 229910002027 silica gel Inorganic materials 0.000 claims description 97
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000843 powder Substances 0.000 claims description 23
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 229920002379 silicone rubber Polymers 0.000 claims description 5
- 239000004945 silicone rubber Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 230000035939 shock Effects 0.000 abstract description 5
- 229920001296 polysiloxane Polymers 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V15/00—Protecting lighting devices from damage
- F21V15/04—Resilient mountings, e.g. shock absorbers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
- F21V29/503—Cooling arrangements characterised by the adaptation for cooling of specific components of light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/83—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks the elements having apertures, ducts or channels, e.g. heat radiation holes
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
- F21V29/86—Ceramics or glass
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
Abstract
The invention relates to a high-power LED bulb, which comprises a lampshade (10), a high-power LED (20), a first base plate (30), a spring column (40), a second base plate (50), a power circuit (60), a radiator (70), a filling material (80) and a screw (90), wherein the lampshade (10) is fixedly connected to the second base plate (50) and forms a spherical cavity with the second base plate (50); the high-power LED (20) positioned in the spherical cavity is fixedly connected to the first bottom plate (30), and the first bottom plate (30) is connected to the second bottom plate (50) through a spring column (40); the upper part of the radiator (70) is fixedly connected with the second bottom plate, the lower part of the radiator is fixedly connected with the screw port (90), a filling material is arranged in the radiator (70), and the power circuit (50) is fixed in the filling material. The high-power LED bulb provided by the embodiment of the invention has the advantages of shock resistance, stability and quick heat dissipation by arranging the spring column structure, and the luminous intensity is high and the high-power LED bulb is durable because the luminous source adopts the high-power LED lamp.
Description
Technical Field
The invention belongs to the field of LED illumination, and particularly relates to a high-power LED bulb.
Background
An LED bulb is an abbreviation of Light Emitting Diode, a solid semiconductor device capable of converting electric energy into visible Light, and directly converts electricity into Light. Compare in traditional light source, high-power LED is as the lighting bulb, and its advantage lies in the low pressure power supply, and single-chip LED operating voltage generally is in 3 ~ 4 volts, is far less than the operating voltage of ordinary bulb light source, safe and reliable.
In the prior art, in the outdoor illumination field, especially lamps on a marine light fishing boat, a gas discharge lamp light source is also mostly adopted, and the gas discharge lamp light source is basically a quartz glass shell. When the glass-shell lamp bulb is used outdoors, particularly on a ship, the lamp is often in vibration due to weather changes, so that the outdoor lamp, particularly the ship lamp, has good shockproof performance. Since the automobile lamp is in a state of being bumpy and vibrated for a long time, it is also required to use a shock-resistant type bulb.
Therefore, how to develop a shock-resistant high-brightness LED bulb has become a hot research issue.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a high-power LED bulb. The technical problem to be solved by the invention is realized by the following technical scheme:
the embodiment of the invention provides a high-power LED bulb, which comprises a lampshade 10, a high-power LED20, a first bottom plate 30, a spring post 40, a second bottom plate 50, a power circuit 60, a radiator 70, a filling material 80 and a screw socket 90, wherein,
the lampshade 10 is fixedly connected to the second bottom plate 50 and forms a spherical cavity with the second bottom plate 50;
the high-power LED20 positioned in the spherical cavity is fixedly connected to the first bottom plate 30, and the first bottom plate 30 is connected to the second bottom plate 50 through a spring post 40;
the upper part of the heat sink 70 is fixedly connected with the second bottom plate, the lower part of the heat sink 70 is fixedly connected with the screw 90, the heat sink 70 is internally provided with a filling material, and the power circuit 50 is fixed in the filling material.
In one embodiment of the present invention, the first base plate 30 has ventilation holes.
In one embodiment of the present invention, the heat spreader 70 is formed by sintering a low temperature ceramic at one time.
In one embodiment of the invention, the lamp housing 10 is made of glass.
In one embodiment of the present invention, the spring post 40 is electrically connected to the power circuit 60 for supplying power to the high power LED lamp 20.
In one embodiment of the present invention, the spring post 40 is wrapped with an insulating material.
In one embodiment of the present invention, the high power LED lamp 20 includes a heat dissipation substrate (21), an LED chip fixedly connected to the heat dissipation substrate (21), and a silica gel layer; the silica gel layer comprises a first silica gel layer (22), a hemispherical lens layer (23) and a second silica gel layer (24), the hemispherical lens layer (23) is embedded between the first silica gel layer (22) and the second silica gel layer (24), the hemispherical lens layer (23) contains a plurality of hemispherical lenses, and the second silica gel layer (24) contains fluorescent powder.
In an embodiment of the present invention, the upper surface of the second silicone gel layer 24 is arc-shaped or hemispherical.
In an embodiment of the invention, the hemispherical lenses are arranged in a rectangular shape or in a staggered shape.
In an embodiment of the present invention, the LED chip is a gallium aluminum nitride ultraviolet chip.
Compared with the prior art, the invention has the beneficial effects that:
the high-power LED bulb provided by the embodiment of the invention has the advantages of shock resistance, stability and quick heat dissipation by arranging the spring column structure, and the luminous intensity is high and the high-power LED bulb is durable because the luminous source adopts the high-power LED lamp.
Drawings
Fig. 1 is a schematic structural diagram of a high-power LED bulb according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a high-power LED lamp according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of an ultraviolet gan aluminum chip according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a lighting principle of a high-power LED lamp according to an embodiment of the present invention;
fig. 5A and 5B are schematic diagrams illustrating an arrangement of a plurality of hemispherical lenses according to an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of a high-power LED bulb according to an embodiment of the present invention; this high-power LED bulb includes: the lamp shade 10, the high-power LED20, the first bottom plate 30, the spring column 40, the second bottom plate 50, the power circuit 60, the radiator 70, the filling material 80 and the screw socket 90, wherein,
the lampshade 10 is fixedly connected to the second bottom plate 50 and forms a spherical cavity with the second bottom plate 50;
the high-power LED20 positioned in the spherical cavity is fixedly connected to the first bottom plate 30, and the first bottom plate 30 is connected to the second bottom plate 50 through a spring post 40;
the upper part of the heat sink 70 is fixedly connected with the second bottom plate, the lower part of the heat sink 70 is fixedly connected with the screw 90, the heat sink 70 is internally provided with a filling material, and the power circuit 50 is fixed in the filling material.
Further, the first base plate 30 has ventilation holes.
Further, the heat sink 70 is formed by once sintering low-temperature ceramics.
Further, the lamp cover 10 is made of glass.
Further, the spring post 40 is electrically connected to the power circuit 60 for supplying power to the high power LED lamp 20.
Further, the spring post 40 is externally wrapped with an insulating material.
According to the high-power LED bulb structure, the spring column structure is designed, so that the LED light source is elastically connected with the bottom structure, severe vibration can be well balanced by the spring column structure under the condition of large vibration, and strong vibration cannot be caused due to the adoption of a plurality of spring columns.
According to the embodiment of the invention, the air holes are formed in the first bottom plate, and the spring columns are of the hollow structures, so that the rapid heat dissipation of high-power LEDs and the like can be accelerated.
The high-power LED bulb provided by the embodiment of the invention has the advantages of shock resistance, stability and quick heat dissipation by arranging the spring column structure, and the luminous intensity is high and the high-power LED bulb is durable because the luminous source adopts the high-power LED lamp.
Example two
In this embodiment, on the basis of the above embodiment, in order to accelerate the heat dissipation effect of the high-power LED light source, the structure of the high-power LED lamp is designed in this embodiment, please refer to fig. 2, and fig. 2 is a schematic structural diagram of the high-power LED lamp provided in the embodiment of the present invention. The high power LED lamp 20 includes:
a heat dissipation substrate 21;
the LED chip is fixedly connected to the heat dissipation substrate 21;
the silica gel layer comprises a first silica gel layer 22, a hemispherical lens layer 23 and a second silica gel layer 24, the hemispherical lens layer 23 is embedded between the first silica gel layer 22 and the second silica gel layer 24, wherein the hemispherical lens layer 23 contains a plurality of hemispherical lenses, and the second silica gel layer 24 contains fluorescent powder.
The hemispherical lens layer is arranged between the first silica gel layer and the second silica gel layer by utilizing the characteristics of different types of silica gel and fluorescent powder glue with different refractive indexes, so that the problem of light emission dispersion of the LED chip is solved, and light emitted by the light source can be more concentrated.
As shown in fig. 3, fig. 3 is a schematic structural diagram of an ultraviolet chip made of gan aluminum according to an embodiment of the present invention; the LED chip is a gallium nitride aluminum ultraviolet chip.
Furthermore, the fluorescent powder is formed by mixing red, green and blue fluorescent powder.
The fluorescent powder formed by mixing the red, green and blue fluorescent powders is mixed according to different proportions, so that the ultraviolet lamp wick can emit light with different colors under irradiation, the light can be changed into any color according to use requirements, and in addition, the color temperature of the light source can be adjusted.
Further, the upper surface of the second silica gel layer 24 is arc-shaped or hemispherical.
Further, the refractive index of the first silica gel layer 22 is smaller than the refractive index of the second silica gel layer 24, and the refractive index of the hemispherical lens layer 23 is larger than the refractive index of the second silica gel layer 24.
The refractive index of the hemispherical lens layer is greater than that of the upper silica gel layer and that of the lower silica gel layer, and the refractive index of the first silica gel layer is less than that of the second silica gel layer, so that total reflection can be avoided, and more light emitted by the LED chip can be irradiated out through the packaging material.
The first silica gel layer and the hemispherical lens layer do not contain fluorescent powder, the second silica gel layer contains fluorescent powder, the fluorescent powder is isolated from the LED chip, and the problem that the quantum efficiency of the fluorescent powder is reduced under the high-temperature condition is solved.
Further, the distance from the top surface of the hemispherical lens layer 23 to the upper surface of the second silicone rubber layer 24 is L, and L is less than 2R/(n2-n1), where n2 is the refractive index of the hemispherical lens layer 23, and n1 is the average value of the refractive indexes of the first silicone rubber layer 22 and the second silicone rubber layer 24.
Furthermore, the diameter of the hemispherical lenses on the hemispherical lens layer 23 is 10 to 200 micrometers, and the plurality of hemispherical lenses are uniformly arranged at intervals, with a pitch of 10 to 200 micrometers.
As shown in fig. 5A and 5B, fig. 5A and 5B are schematic arrangement diagrams of a plurality of hemispherical lenses according to an embodiment of the invention; the hemispherical lenses are arranged in a rectangular shape or staggered.
Further, the heat dissipation substrate 21 is a solid iron plate, and the thickness of the heat dissipation substrate 21 is between 0.5 mm and 10 mm.
Further, the heat dissipation substrate 21 is fixed on the support through a buckle or a dispensing manner.
The embodiment of the invention has the beneficial effects that:
1. the high-power LED bulb improves the problem of light emission dispersion of the LED chip, and enables emitted light to be more concentrated.
2. The high-power LED bulb solves the problem that the quantum efficiency of the fluorescent powder is reduced under the high-temperature condition.
3. The high-power LED bulb adopts the fluorescent powder formed by mixing the red fluorescent powder, the green fluorescent powder and the blue fluorescent powder, and the fluorescent powder is mixed according to different proportions, so that the high-power LED bulb can emit light with different colors under the irradiation of the ultraviolet lamp wick, can be changed into any color according to the use requirement, and can also adjust the color temperature of a light source.
4. The high-power LED bulb provided by the embodiment of the invention has high luminous efficiency.
EXAMPLE III
On the basis of the above embodiments, the present embodiment will describe the process flow of the high power LED lamp 20 in more detail. The method comprises the following steps:
the method specifically comprises the following steps: selecting the heat dissipation substrate 21;
cleaning the heat dissipation substrate 21, and cleaning stains, especially oil stains, on the heat dissipation substrate 21;
and drying the heat dissipation substrate 21.
in an embodiment of the present invention, the LED chip is an aluminum gallium nitride ultraviolet chip (AlGaN), as shown in fig. 3 again, wherein the ultraviolet chip structure includes: layer 1 is a substrate material, layer 2 is an N-type AlGaN layer, layer 3 is an MQW layer, layer 4 is an AlxGaN1-xN/AlyGaN1-yN layer (wherein 0.5> x > y), layer 5 is a P-type AlGaN layer, layer 6 is a P-type GaN layer, layer 7 is a P-type contact, and layer 8 is an N-type contact arranged on layer 2; and welding the cathode lead and the anode lead of the LED chip above the heat dissipation substrate 21 by using a reflow soldering process, checking the welding wires to be qualified, entering the next procedure, and re-welding if the welding wires are not qualified.
And step X1, respectively configuring silica gel materials for preparing the first silica gel layer 22 and the hemispherical lens layer 23.
And step X2, preparing a silica gel material containing the fluorescent powder for preparing the second silica gel layer 24.
Specifically, three kinds of red, green and blue fluorescent powders are prepared, and the red, green and blue fluorescent powders are mixed with the second silica gel layer 24 according to a certain proportion;
step 31, coating first silica gel on the upper surface of the LED chip;
and step 32, carrying out first primary baking on the first silica gel to form the first silica gel layer 22, wherein the first primary baking temperature is 90-125 ℃, and the time is 15-60 minutes.
Preferably, the first silicone gel layer 22 is formed of a high temperature resistant silicone gel material, and the upper surface of the first silicone gel layer 22 is flat, so as to facilitate forming the hemispherical lens layer 23 and ensure that light is uniform when passing through the first silicone gel layer 22.
step 41, forming a plurality of hemispherical silica gel balls by using a hemispherical mold, and placing the hemispherical silica gel balls with the mold on the first silica gel layer 22;
and 42, carrying out second primary baking, demolding and polishing on the plurality of hemispherical silica gel balls to form the hemispherical lens layer 23, wherein the second primary baking temperature is 90-125 ℃, and the time is 15-60 minutes.
Preferably, the arrangement of the plurality of hemispherical lenses on the hemispherical lens layer 23 may be rectangular or staggered, and the smaller the distance between two adjacent hemispherical lenses, the better.
step 51, coating third silica gel on the hemispherical lens layer 23 and the first silica gel layer 22;
step 52, forming an arc shape or a hemisphere shape on the upper surface of the third silica gel by using a hemispherical mold;
and 53, carrying out third primary baking, demolding and polishing on the third silica gel to form the second silica gel layer 24, wherein the third primary baking temperature is 90-125 ℃, and the time is 15-60 minutes.
Preferably, the red phosphor is Y2O2S Eu3+, the green phosphor is BaMgAl10O17 Eu2+, Mn2+, and the blue phosphor is Sr5(PO4)3Cl Eu2+, wherein the wavelength of the red phosphor is 626nm, the wavelength of the green phosphor is 515nm, and the wavelength of the blue phosphor is 447 nm.
And 6, long-baking the high-power LED lamp comprising the first silica gel layer 22, the hemispherical lens layer 23 and the second silica gel layer 24 to finish the packaging of the LED.
Specifically, the baking temperature of the long baking is 100-150 ℃, and the baking time is 4-12 hours, so that the internal stress of the high-power LED lamp is eliminated.
After the packaging is completed, the embodiment of the invention generally further comprises testing, sorting the packaged LED and a high-power LED lamp qualified by the packaging test, so as to facilitate subsequent application.
Example four
Referring to fig. 2 and fig. 4, and fig. 5A and fig. 5B, fig. 2 is a schematic structural diagram of a high-power LED lamp according to an embodiment of the present invention; FIG. 4 is a schematic diagram of a lighting principle of a high-power LED lamp according to an embodiment of the present invention; fig. 5A and 5B are schematic diagrams illustrating an arrangement of a plurality of hemispherical lenses according to an embodiment of the invention.
As shown in FIG. 2, the high-power LED lamp provided by the embodiment of the invention comprises
A heat dissipation substrate 21;
the LED chip is fixedly connected to the heat dissipation substrate 21;
the silica gel layer comprises a first silica gel layer 22, a hemispherical lens layer 23 and a second silica gel layer 24, the hemispherical lens layer 23 is embedded between the first silica gel layer 22 and the second silica gel layer 24, wherein the hemispherical lens layer 23 contains a plurality of hemispherical lenses, and the second silica gel layer 24 contains fluorescent powder.
Specifically, the heat dissipation substrate 21 is a solid iron plate, the thickness D of the heat dissipation substrate 21 is 0.5 to 10mm, and the width W of the heat dissipation substrate is cut according to a required size, which is not limited herein. The solid iron plate has large heat capacity and good heat dissipation effect, and the thicker iron plate is not easy to deform, so that the close contact between the heat dissipation substrate 21 and the LED chip is ensured, and the aim of better heat dissipation is fulfilled.
In addition, in the embodiment of the present invention, the heat dissipation substrate 21 is fixed on the bracket in a manner of a snap or a dispensing, specifically, the size of the bracket is matched with the heat dissipation substrate 21, or the bracket is set according to an application requirement, which is not limited herein. Before the bracket is used, the bracket needs to be cleaned, especially the surface oil stain needs to be removed, then the bracket is dried, and the heat dissipation substrate 21 and the bracket are assembled under the condition of drying.
Further, the LED chip is an aluminum gallium nitride ultraviolet (AlGaN) chip, light emitted from the LED chip is ultraviolet light, and an anode lead and a cathode lead of the LED chip are respectively welded to the heat dissipation substrate 21.
In the embodiment of the present invention, the silica gel layer is made of silica gel materials of different materials, the raw material of the first silica gel layer 22 is a high temperature resistant silica gel material, the material for preparing the hemispherical lens layer 23 may be a mixture of polycarbonate, polymethylmethacrylate and glass, the raw material for preparing the second silica gel layer 24 is a mixture of methyl silica gel and high refractive index phenyl silicone rubber, and further, the phosphor contained in the second silica gel layer 24 is a mixture of red, green and blue phosphors, wherein the red phosphor is Y2O2S: Eu3+, the green phosphor is BaMgAl10O17: Eu2+, Mn2+, and the blue phosphor is Sr5(PO4)3Cl: Eu2+, after the silica gel material and the three-color phosphor are mixed, a color test needs to be performed on the mixed silica gel material, as shown in fig. 4, so that when the ultraviolet light emitted by the LED chip irradiates on the three phosphors, the excited light color is mixed to form white light or other color light, which may be different according to different proportions of the three-color phosphor, and this is not limited in the embodiment of the present invention.
It should be noted that the hemispherical lens layer 23 includes a plurality of hemispherical lenses, and a silicone strip formed by the second silicone layer 24 is filled between two adjacent hemispherical lenses, in the embodiment of the present invention, as shown in fig. 5A and 5B, the hemispherical lenses located above the first silicone layer 22 may be uniformly arranged in a rectangular shape or staggered arrangement, and in addition, the arrangement manner of the hemispherical lenses may also be a circular shape, an elliptical shape, or an irregular shape, so as to ensure that the light of the light source is uniformly distributed in the concentrated region to the maximum extent, which is not limited in the embodiment of the present invention.
Further, in the present embodiment, the size of the plurality of hemispherical lenses on the hemispherical lens layer 23 is also limited, if the size of the hemispherical lenses is too small, the hemispherical lenses do not function to concentrate light beams, and when the size of the hemispherical lenses is too large, light is easily uneven, so in the present embodiment, the diameter 2R of the hemispherical lenses is between 10 to 200 micrometers, and the plurality of hemispherical lenses are uniformly spaced, that is, the distance is equal, in the present embodiment, the distance a between two adjacent hemispherical lenses is 10 to 200 micrometers.
According to the embodiment of the invention, the hemispherical lens layer 23 is arranged between the first silica gel layer 22 and the second silica gel layer 24, so that the light-gathering property of the LED chip is improved, light emitted by a light source can be more concentrated, the direction of the light can be changed by the hemispherical lens, the total reflection effect can be effectively inhibited, more light can be emitted to the outside of the LED, and the light-emitting efficiency of the LED is improved.
In the embodiment of the invention, the upper surface of the second silica gel layer 24 is arc-shaped or hemispherical; wherein, the hemispherical light-emitting angle is the largest, and the LED is suitable for common lighting application; the arc-shaped light-emitting angle is small, and the LED lamp is suitable for local lighting application or indication lighting. Therefore, the specific shape can be selected according to the application place of the product so as to achieve the best use effect, and the shape with the middle high and the two sides low is formed on the upper surface of the second silica gel layer 24, so that the large lens has the effect of shaping light irradiated from the gallium nitride aluminum ultraviolet chip, and the problem that the irradiation divergence is not concentrated is solved.
The refractive index of the first silica gel layer 22 is smaller than that of the second silica gel layer 24, and the refractive index of the hemispherical lens layer 23 is larger than that of the second silica gel layer 24. Specifically, the silica gel materials for preparing the first silica gel layer 22, the second silica gel layer 24 and the hemispherical lens layer 23 may be configured according to different proportions, so as to form silica gel materials with different refractive indexes, in the embodiment of the present invention, the refractive index of the hemispherical lens layer 23 is the largest, and the refractive indexes of the remaining two silica gel layers are sequentially increased from bottom to top, and this setting manner can better suppress total reflection, it should be noted that the smaller the refractive index of the second silica gel layer 24, the better the refractive index is, so as to avoid forming a larger refractive index difference between the second silica gel layer 24 and the outside air, which leads to total reflection, in the embodiment of the present invention, the refractive index of the second silica gel layer 24 is not more than 1.5, so as to maximize light irradiation, avoid total reflection from absorbing light by the encapsulation structure into heat, and improve light extraction efficiency.
The distance from the top surface of the hemispherical lens layer 23 to the upper surface of the second silicone gel layer 24 is L, and L is less than 2R/(n2-n1), where n2 is the refractive index of the hemispherical lens layer 23, and n1 is the average value of the refractive indexes of the first silicone gel layer 22 and the second silicone gel layer 24.
Specifically, in the embodiment of the present invention, the hemispherical lens layer 23 includes a plurality of hemispherical lenses, the hemispherical lenses are "plano-convex lenses", and the focal length f is R/(n2-n1), where n2 is the refractive index of the hemispherical lens layer 23, n1 is the average of the refractive indexes of the first silica gel layer 22 and the second silica gel layer 24 (the refractive indexes of the upper silica gel layer and the lower silica gel layer of the hemispherical lens layer 23 are close in the embodiment of the present invention), and R is the radius of the hemispherical lens layer 23.
In order to ensure that the light is converged after exiting from the lens and does not diverge, in the embodiment of the present invention, the height of the second silicone gel layer 24 above the top surface of the hemispherical lens layer 23 should be within 2 times of the focal length, that is, the distance of the second silicone gel layer 24 above the top surface of the hemispherical lens layer 23 is not more than 2R/(n2-n1), and in practical applications, the thickness of the second silicone gel layer 24 is generally 50-500 micrometers higher than the top surface of the spherical lens layer 23.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (9)
1. A high-power LED bulb is characterized by comprising a lampshade (10), a high-power LED (20), a first base plate (30), a spring column (40), a second base plate (50), a power circuit (60), a radiator (70), a filling material (80) and a screw (90),
the lampshade (10) is fixedly connected to the second bottom plate (50) and forms a spherical cavity with the second bottom plate (50);
the high-power LED (20) is positioned in the spherical cavity and fixedly connected to the first bottom plate (30), and the first bottom plate (30) is connected to the second bottom plate (50) through a plurality of spring columns (40); wherein the plurality of spring columns (40) are arranged between the first bottom plate (30) and the second bottom plate (50), and the spring columns (40) are of hollow structures;
the upper part of the radiator (70) is fixedly connected with the second bottom plate, the lower part of the radiator is fixedly connected with the screw port (90), a filling material is arranged in the radiator (70), and the power circuit (50) is fixed in the filling material;
the high-power LED lamp (20) comprises a heat dissipation substrate (21), an LED chip fixedly connected on the heat dissipation substrate (21) and a silica gel layer; the silica gel layer comprises a first silica gel layer (22), a hemispherical lens layer (23) and a second silica gel layer (24), the hemispherical lens layer (23) is embedded between the first silica gel layer (22) and the second silica gel layer (24), the hemispherical lens layer (23) contains a plurality of hemispherical lenses, and the second silica gel layer (24) contains fluorescent powder; the refractive index of the hemispherical lens layer (23) is greater than the refractive indexes of the first silica gel layer (22) and the second silica gel layer (24), the refractive index of the first silica gel layer (22) is less than the refractive index of the second silica gel layer (24), and the refractive index of the second silica gel layer (24) is not more than 1.5; wherein the diameter 2R of the hemispherical lens is between 10 and 200 microns; the distance A between two adjacent hemispherical lenses is 10-200 microns; the thickness of the second silica gel layer 24 is 50-500 microns higher than the top surface of the ball lens 23.
2. The LED bulb of claim 1, wherein the first base plate (30) has air permeable holes therein.
3. The LED bulb of claim 1, wherein the heat sink (70) is formed from a low temperature ceramic by a single sintering.
4. The LED bulb according to claim 1, characterized in that the globe (10) is made of glass.
5. The LED bulb of claim 1, wherein the spring post (40) is electrically connected to the power circuit (60) for powering the high power LED lamp (20).
6. The LED bulb of claim 1, wherein the spring post (40) is overwrapped with an insulating material.
7. The high-power LED bulb according to claim 1, wherein the upper surface of the second silicone rubber layer (24) is arc-shaped or hemispherical.
8. The high power LED bulb as recited in claim 1, wherein a plurality of said hemispherical lenses are arranged in a rectangular pattern or in a staggered pattern.
9. The high power LED bulb as recited in claim 1, wherein the LED chip is an aluminum gallium nitride ultraviolet chip.
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| CN202432480U (en) * | 2011-12-29 | 2012-09-12 | 彩虹集团公司 | High-power LED (Light-Emitting Diode) radiating member |
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| CN207831021U (en) * | 2017-11-28 | 2018-09-07 | 西安科锐盛创新科技有限公司 | High-power LED bulb |
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| US8764504B2 (en) * | 2011-02-25 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| CN103807630B (en) * | 2012-11-14 | 2017-06-06 | 深圳市海洋王照明工程有限公司 | A kind of light fixture |
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| KR100961439B1 (en) * | 2008-04-23 | 2010-06-09 | 노창석 | Socket for preventing vibration |
| CN202432480U (en) * | 2011-12-29 | 2012-09-12 | 彩虹集团公司 | High-power LED (Light-Emitting Diode) radiating member |
| CN205640550U (en) * | 2016-05-25 | 2016-10-12 | 长春工程学院 | Novel LED street lamp |
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Effective date of registration: 20201201 Address after: 314000 1-4, building 1, No. 1138 shunze Road, Nanhu District, Jiaxing City, Zhejiang Province Applicant after: Jiaxing Minghe intelligent household products Co.,Ltd. Address before: 710065 No. 86 Leading Times Square (Block B), No. 2, Building No. 1, Unit 22, Room 12202, No. 51, High-tech Road, Xi'an High-tech Zone, Shaanxi Province Applicant before: XI'AN CREATION KEJI Co.,Ltd. |
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Denomination of invention: High power LED bulb Effective date of registration: 20220711 Granted publication date: 20201222 Pledgee: Agricultural Bank of China Limited by Share Ltd. South Lake branch Pledgor: Jiaxing Minghe intelligent household products Co.,Ltd. Registration number: Y2022330001190 |