Embodiment two
The present embodiment is made further to the principles of the present invention and realization method on the basis of embodiment one
It is bright.
Preferably, the lamp body 12 is made by plastic material forms.Plastic material is at low cost, it is easy to process, can be moisture-proof
Anticorrosion is usually implemented as the sheathing material of electronic product.
Preferably, the accumulator 13 is lead-acid battery or colloid battery.The operating voltage of lead-acid battery is relatively steady, uses temperature
Degree, operating current are wider, and storge quality is good and low cost;Colloid battery discharge curve is straight, and inflection point is high, lasts a long time, high temperature
And low-temperature characteristics is good, is suitble to use under changeable weather conditions.
Preferably, 15 inside of the handle is provided with skid resistance strip.The skid resistance strip can grasp handle 15 with people
When custom corresponding shape of stripes is set, ensure people while difficult to slide using the lantern 10, hand is not in
The phenomenon that feeling bad.
Preferably, the switch 16 is slipping switch or push-button switch.The switch 16 can be arranged in handle front end,
The position is usually the location of thumb when people hold handle 15, and people's one hand can be facilitated to use the lantern in this way
10。
Further, Fig. 2 is referred to, Fig. 2 is a kind of structural schematic diagram for lamp cap that the utility model embodiment provides;Institute
Stating lamp cap 11 includes:
Pedestal 111;
LED light 112 is arranged in 111 upper surface middle position of the pedestal;The quantity of LED light 112 can be according to reality
It needs to be arranged.
Reflector 113 is arranged in 111 upper surface of the pedestal and positioned at the outside of the LED light 112;
Cooling fin 114 is arranged in 111 upper surface of the pedestal and positioned at the outside of the reflector 113;
Lens 115 are arranged on 113 top of the reflector.
Preferably, the pedestal 111 is all made of aluminum material with the cooling fin 114 and makes to be formed.Aluminum material density is small, valence
Lattice are low, are a kind of good heat sink materials, are widely used in electronic product.
Further, 114 outer surface of the cooling fin is provided with concave channels.In 114 outer surface of cooling fin, spill is set
The purpose of groove is for increasing heat radiation area, to improve its radiating efficiency.
In addition, in order to improve the luminous efficiency and heat dissipation effect of LED light 112, design is also optimized to its structure, is had
Body, Fig. 3 is referred to, Fig. 3 is a kind of structural schematic diagram for LED light that the utility model embodiment provides, the LED light 13 packet
It includes:
Heat-radiating substrate 1121;
LED chip is fixed on the heat-radiating substrate 1121;
Layer of silica gel, including it is set in turn in the first lens jacket 1122, the first encapsulated layer of the LED chip upper surface
1123, the second lens jacket 1124 and the second encapsulated layer 1125, wherein the refractive index of first lens jacket 1122 is more than described the
The refractive index of one encapsulated layer 1123, second lens jacket 1124 are more than the refractive index of second encapsulated layer 1125, and described the
The refractive index of one encapsulated layer 1123 is less than the refractive index of second encapsulated layer 1125.
First lens jacket 1122 and second lens jacket 1124 are made of multiple hemispherical lens respectively.
Further, second lens jacket 1124 and second encapsulated layer 1125 contain fluorescent powder.
Further, 1121 material of the heat-radiating substrate is solid copper coin, and the thickness of the heat-radiating substrate 1121 is more than
0.5 millimeter, be less than 10 millimeters.
Further, the refractive index of first lens jacket 1122 is more than the refractive index of first encapsulated layer 1123, institute
The refractive index that the second lens jacket 1124 is more than second encapsulated layer 1125 is stated, the refractive index of first encapsulated layer 1123 is less than
The refractive index of second encapsulated layer 1125.
Further, the upper surface of second encapsulated layer 1125 is arc.
Further, first lens jacket 1122 and first encapsulated layer 1123 are made of high temperature resistant silica gel.
Further, a diameter of 10-200 microns of multiple hemispherical lens, and multiple hemispherical lens are equal
Even to be alternatively arranged, spacing is 10-200 microns.
Further, multiple rectangular arrangements of the hemispherical lens, or be staggered.
Further, further include holder, the heat-radiating substrate 1121 is fixed on the holder by buckle or viscose glue mode
On.
Further, the LED chip is gallium nitride base blue light chip.
The beneficial effects of the utility model are specially:
1, pass through and the first lens jacket and the second lens jacket are set so that illumination is more concentrated, and by the upper of the second encapsulated layer
Surface is set as arc, carries out shaping to light beam, avoids increase extra lens, reduce production cost.
2, it by the way that fluorescent powder is arranged in the second lens jacket and the second encapsulated layer, avoids and fluorescent powder is applied directly to LED
On chip, the quantum efficiency of fluorescent powder caused by solving the problems, such as under the high temperature conditions declines.
3, using the variety classes silica gel feature different with phosphor gel refractive index, the refractive index of the first encapsulated layer is less than the
The refractive index of two encapsulated layers, the refractive index of the first lens jacket are more than the refractive index of the first encapsulated layer, the refractive index of the second lens jacket
Not only be more than the refractive index of the first encapsulated layer, but also more than the refractive index of the second encapsulated layer, this kind of set-up mode can to avoid total reflection,
The light that LED chip is sent out more is shone out through encapsulating material.
4, by using different arrangement modes to hemispherical lens, it is ensured that the light of light source uniformly divides in concentration zones
Cloth.
5, the utility model embodiment can change the direction of propagation of light by the way that double lens layer, lens are arranged, can be effective
Ground inhibits total reflection effect, is conducive to outside more light emittings to LED, improves the luminous efficiency of LED.
Fig. 4 is referred to, Fig. 4 is a kind of LED encapsulation method flow diagram that the utility model embodiment provides;Above-mentioned
On the basis of embodiment, the present embodiment will in more detail be introduced the technological process of the utility model.This method includes:
Step 1 prepares heat-radiating substrate 1121;
Include specifically:Choose the heat-radiating substrate 1121;
The heat-radiating substrate 1121 is cleaned, the spot above heat-radiating substrate 1121, especially oil stain are cleaned up;
The heat-radiating substrate 1121 is dried.
Step 2 prepares LED chip, and the LED chip is fixed on the heat-radiating substrate 1121;
Further, Fig. 5 is referred to, Fig. 5 is a kind of structure for GaN base blue chip that the utility model embodiment provides
Schematic diagram;Its middle level 1 is substrate material, and layer 2 is GaN buffer layers, and layer 3 is N-type GaN layer, and layer 4 and layer 6 are p-type GaN Quantum Well
Wide bandgap material, layer 5 are INGaN luminescent layers, and layer 7 is AlGaN barrier materials, and layer 8 is p-type GaN layer, and the gallium nitride base is blue
The thickness of light wick is between 90 microns -140 microns;The cathode leg of LED chip and anode tap are welded using Reflow Soldering
It connects technique and is welded to 1121 top of heat-radiating substrate, then bonding wire is checked, it is qualified, then enter lower step process, if unqualified,
Then weld again.
Step X1, it is respectively provided for preparing the silica gel of first lens jacket 1122 and first encapsulated layer 1123
Material;
Specifically, preparing the silica gel material of the first lens jacket 1122 and preparing the silica gel material of the first encapsulated layer 1123 not
Containing fluorescent powder, and it is high temperature resistant silicon glue material;The refractive index of first lens jacket 1122 is less than first encapsulated layer
1123 refractive index.
Step X2, it is respectively provided for preparing the silica gel material containing fluorescent powder of second lens jacket 1124 and be used for
The silica gel material containing fluorescent powder of second encapsulated layer 1125 is prepared,
Specifically, based in the utility model embodiment, LED chip is gallium nitride base blue light chip, therefore, above-mentioned fluorescence
Powder is yellow fluorescent powder;Silica gel and yellow fluorescent powder are mixed, raw material proportioning is adjusted, the silica gel for not having to refractive index is made
Material, also, after silica gel is mixed with fluorescent powder, need to carry out color measurement to mixed silica gel material, ensure LED chip
It is irradiated on fluorescent powder, the wave-length coverage of the fluorescence sent out is between 570nm-620nm.
Preferably, the refractive index of second lens jacket 1124 is more than the refractive index of first encapsulated layer 1123, also greatly
In the refractive index of second encapsulated layer 1125.
Step 3 forms the first lens jacket 1122 in the upper surface of the LED chip, and first lens jacket 1122 includes
Multiple first hemispherical lens;
Step 31 forms multiple semispherical silicon glueballs using the first hemispherical above the LED chip;
Step 32 carries out the multiple semispherical silicon glueballs the first just roasting, demoulding and polishing, to form the first lens jacket
1122, roasting temperature at the beginning of described first is 90-125 °, and the time is 15-60 minutes.
Preferably, the arrangement mode of multiple first hemispherical lens on the first lens jacket 1122 can be rectangle or water chestnut
Shape, or be staggered, the spacing of adjacent two the first hemispherical lens is the smaller the better.
Step 4 forms the first encapsulated layer 1123 above the LED chip upper surface and first lens jacket 1122;
Step 41 coats the first layer of silica gel above the LED chip upper surface and first lens jacket 1122;
Step 42 carries out first layer of silica gel the second just roasting and polishing, to form first encapsulated layer 1123, institute
It is 90-125 ° to state second and just bake temperature, and the time is 15-60 minutes.
Specifically, the lower surface of the first layer of silica gel contacts with LED chip or is contacted with the first lens jacket 1122, wherein
The upper surface of first layer of silica gel is plane, and in order to which the second lens jacket 1124 is arranged on it, and good flatness is advantageous
The first encapsulated layer 1123 is penetrated in light beam.
Step 5 forms the second lens jacket 1124 above first encapsulated layer 1123, and second lens jacket 1124 wraps
Multiple second hemispherical lens are included, and multiple second hemispherical lens contain fluorescent powder;
Step 51 forms multiple hemispherical silica gel using the second hemispherical above first encapsulated layer 1123
Ball contains fluorescent powder in the semispherical silicon glueballs;
Step 52 carries out the multiple semispherical silicon glueballs just roasting third, demoulding and polishing, to form the second lens jacket
1124, just roasting temperature is 90-125 ° to the third, and the time is 15-60 minutes.
Step 6 forms the second encapsulated layer 1125, and second encapsulated layer 1125 above second lens jacket 1124
Contain fluorescent powder;
Step 61 coats the second layer of silica gel above second lens jacket 1124 and first encapsulated layer 1123;
Step 62 makes the upper surface of second layer of silica gel form arc using the hemispherical;
Step 63 carries out second layer of silica gel the 4th just roasting, demoulding and polishing, to form the second encapsulated layer 1125,
Roasting temperature is 90-125 ° at the beginning of 4th, and the time is 15-60 minutes.
Specifically, setting the upper surface of the second encapsulated layer 1125 to arc, it is special to form intermediate appearance high, that both ends are low
Point so that the second encapsulated layer 1125 is provided with the effect of big lens, can carry out secondary reshaping to light beam, and need not increase outer
Portion's lens, reduce production cost.
Step 7 will include first lens jacket 1122, first encapsulated layer 1123, second lens jacket 1124
And the LED light of second encapsulated layer 1125 carry out it is long roasting, to complete the encapsulation of the LED.
Specifically, long roasting baking temperature is 100~150 DEG C, baking time is 4~12h, to eliminate the inside of LED light
Stress.
Further include in LED light of test, the LED of go-no-go encapsulation completion and Package Testing qualification etc. after completing LED encapsulation
Hold, in favor of subsequent product application.
Shown in Fig. 3, Fig. 6 and Fig. 7 A and Fig. 7 B, Fig. 3 is a kind of LED light that the utility model embodiment provides
Structural schematic diagram;Fig. 6 is a kind of LED light principle of luminosity schematic diagram that the utility model embodiment provides;Fig. 7 A are this practicality
A kind of arrangement schematic diagram for multiple hemispherical lens that new embodiment provides;Fig. 7 B provide another for the utility model embodiment
A kind of arrangement schematic diagram of multiple hemispherical lens.
Wherein, the LED light that the utility model embodiment provides, including
Heat-radiating substrate 1121;
LED chip is fixed on the package cooling substrate 1121;
Layer of silica gel, including it is set in turn in the first lens jacket 1122, the first encapsulated layer of the LED chip upper surface
1123, the second lens jacket 1124 and the second encapsulated layer 1125, wherein first lens jacket 1122 and second lens jacket
1124 are made of multiple hemispherical lens respectively.
It follows that in the LED light of the utility model embodiment, 1124 heap of the first lens jacket 1122 and the second lens jacket
It is folded, form multilayer lens arrangement, this kind of structure so that illumination is more uniform in concentration zones, and contacted with LED chip first
Lens jacket 1122 and the first encapsulated layer 1123 do not contain fluorescent powder, and this avoid the light absorptions that chip will radiate backward
Fall, so improving efficiency of light extraction.
In the utility model embodiment, LED chip is gallium nitride base blue light chip, second lens jacket 1124 and institute
It states the second encapsulated layer 1125 and contains yellow fluorescent powder, when gallium nitride base blue light chip light emitting, as shown in fig. 6, LED chip is irradiated to
When on yellow fluorescent powder, excitation yellow fluorescent powder, which shines, ultimately forms white light, in this way detaches LED chip with fluorescent powder, solves
The problem of quantum efficiency of fluorescent powder caused by under the high temperature conditions declines.
In the utility model embodiment, 1121 material of the heat-radiating substrate is solid copper coin, and the heat-radiating substrate 1121
Thickness be more than 0.5 millimeter, be less than 10 millimeters, wherein the thermal capacitance of copper coin is big, and thermal conductivity is good, the heat that generates when LED chip works
Amount, can quickly move through solid copper coin and distribute, and the thickness of heat-radiating substrate 1121 is between 0.5-10mm, thickness
It is larger to prevent 1121 temperature distortion of heat-radiating substrate, ensure that heat-radiating substrate 1121 is in close contact with LED chip, ensures heat dissipation effect
Fruit.
In the utility model embodiment, the refractive index of first lens jacket 1122 is more than first encapsulated layer 1123
Refractive index, second lens jacket 1124 are more than the refractive index of second encapsulated layer 1125, first encapsulated layer 1123
Refractive index is less than the refractive index of second encapsulated layer 1125.In the utility model embodiment, the first lens jacket 1122 and second
The material of multiple hemispherical lens on lens jacket 1124 can be mixed by polycarbonate, polymethyl methacrylate and glass
It forming, the refractive index of hemispherical lens is adjusted according to the difference of each ingredient, the first encapsulated layer 1123 does not contain fluorescent powder,
Main composition material can be organosilicon material etc., and the material of the second encapsulated layer 1125 can be that methyl silicone rubber and phenyl are high
Refractive index silicone rubber mix forms, and in the utility model embodiment, the refractive index of lens jacket is more than the refractive index of encapsulated layer,
The refractive index of encapsulated layer is sequentially increased from bottom to top, this kind of set-up mode can preferably inhibit total reflection phenomenon so that illumination
Maximumlly shine out, avoid total reflection so that light be packaged structure absorb become heat, improve efficiency of light extraction.
It should be noted that in the utility model embodiment, the refractive index of the second encapsulated layer 1125 is the smaller the better, is no more than
1.5, larger refringence is formed to avoid with outside air, leads to light total reflection, packed material absorption switchs to heat, shadow
Ring light extraction efficiency.
It should be noted that in the utility model embodiment, it is saturating comprising multiple first hemisphericals on the first lens jacket 1122
Mirror, those first hemispherical lens are " planoconvex lens ", focal length f=R/ (n2-n1), wherein n2 is the first lens jacket 1122
Refractive index and the refractive index of the second lens jacket 1124 are averaged, and n1 is the folding for taking 1124 upper layer and lower layer encapsulated layer of the second lens jacket
Penetrate rate average value (refractive index of the first encapsulated layer 1123 is less than the second encapsulated layer 1125 in the utility model embodiment, but two
The refractive index value of person is more close, and refringence is little), R is the radius of the first hemispherical lens.
In order to gather state, this practicality when ensureing that light reaches the second lens jacket 1124 after the outgoing of the first lens jacket 1122
In new embodiment, the height of the distance between the first lens jacket 1122 and the second lens jacket 1124 L should 2 times of focal lengths with
Interior namely L range is no more than 2R/ (n2-n1).
In addition, in the utility model embodiment, the thickness of the second encapsulated layer 1125 is thicker, the top surface of the second lens jacket 1124
To the upper surface of the second encapsulated layer 1125 generally between 50-500 microns.
In the utility model embodiment, the upper surface of second encapsulated layer 1125 is arc, and the arc specifically can be with
For hemispherical, parabolic type or pancake, wherein hemispherical beam angle is maximum, is suitable for general lighting application;Paraboloid goes out
Optic angle is minimum, is suitable for local lighting application;And pancake falls between, and is suitable for guidance lighting;It therefore, can be according to production
Product application places select specific shape, to reaching best using effect.It is intermediate high in this way, the low surface structure in both sides
So that the second encapsulated layer 1125 has the function of lens, when illumination is mapped to the second 1125 surface of encapsulated layer, by the second encapsulation
The shaping of layer 1125 so that illumination is more concentrated uniformly, and need not increase outer lens, reduces production cost.
When due to LED operation, a large amount of heat is will produce, causes silica gel material is heated yellow can occur, influences lighting color
And product service life, therefore, in the utility model embodiment, the first lens jacket 1122 for being in direct contact with LED chip and
First encapsulated layer 1123 is made of high temperature resistant silica gel.
In the utility model embodiment, a diameter of 10-200 microns of multiple hemispherical lens, and multiple described half
Sphere lens uniform intervals arrange, and spacing is 10-200 microns, as shown in figure 3, a diameter of 2R of multiple hemispherical lens, between
Between 10-200 microns, it should be noted that the diameter of multiple hemispherical lens can be the same or different, and two neighboring half
The distance between sphere lens be A, the range of A between 10-200 microns, between adjacent two hemispherical lens away from
From the smaller the better, and spacing A can be different, can also be evenly distributed, and the present embodiment is without limitation.
In the utility model embodiment, appropriate restriction is also carried out to the arrangement mode of multiple hemispherical lens, such as Fig. 7 A
It is shown, multiple rectangular arrangements of hemispherical lens, or as shown in Figure 7 B, multiple hemispherical lens are staggered.Specifically, this
In utility model embodiment, the first lens jacket 1122 uses rectangular arranged, the second lens jacket 1124 to use and be staggered, Huo Zhexiang
It mutually exchanges, to realize the staggered effect of hemispherical lens of the first lens jacket 1122 and the second lens jacket 1124, staggered row
Row can gather the light between adjacent lens, generate focussing force.
And when the first lens jacket 1122 is consistent with the arrangement mode of hemispherical lens of the second lens jacket 1124, it can be right
The rambling light that LED chip generates carries out shaping, and light is made to gather.
In the utility model embodiment, the encapsulating structure further includes holder, and heat-radiating substrate 1121 is fixed on holder, Gu
Determining mode has the modes such as buckle, viscose glue.
Specifically, in the utility model embodiment, heat-radiating substrate 1121 is solid copper substrate, the thickness of heat-radiating substrate 1121
D is spent between 0.5-10mm, and the width W of heat-radiating substrate 1121 is cut according to the size of LED chips, is not limited herein
System, copper substrate thermal capacitance is big, and thermal conductivity is good, and is not easy temperature distortion so that more preferable to the thermal diffusivity of LED chip.First thoroughly
The radius of mirror layer 1122, each hemispherical lens is R, and the spacing of two neighboring hemispherical lens is A, the first lens jacket 1122
Top surface to the bottom surface of the second lens jacket 1124 distance be L, between 0-2R/ (n2-n1), the second lens jacket 1124 is set L
It is placed in the top of the first encapsulated layer 1123, the radius of multiple hemispherical lens on the second lens jacket 1124 is also R, and second is saturating
The top surface of multiple hemispherical lens in mirror layer 1124 to the upper surface of the second encapsulated layer 1125 distance between 50-500 microns,
In the utility model embodiment, the upper surface of the second encapsulated layer 1125 is arc, a larger lens is formd, with to light beam
Secondary reshaping is carried out, and avoids increase outer lens, therefore reduces production cost.
Finally it should be noted that:Above example is only to illustrate the technical solution of the utility model, rather than its limitations;
Although the utility model is described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that:
It still can be with technical scheme described in the above embodiments is modified, or is carried out to which part technical characteristic etc.
With replacement;And these modifications or replacements, various embodiments of the utility model technology that it does not separate the essence of the corresponding technical solution
The spirit and scope of scheme.