CN108131600A - Projecting Lamp - Google Patents

Projecting Lamp Download PDF

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Publication number
CN108131600A
CN108131600A CN201711382583.9A CN201711382583A CN108131600A CN 108131600 A CN108131600 A CN 108131600A CN 201711382583 A CN201711382583 A CN 201711382583A CN 108131600 A CN108131600 A CN 108131600A
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CN
China
Prior art keywords
layer
lens
projecting lamp
refractive index
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711382583.9A
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Chinese (zh)
Inventor
冉文方
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Xian Zhisheng Ruixin Semiconductor Technology Co Ltd filed Critical Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
Priority to CN201711382583.9A priority Critical patent/CN108131600A/en
Publication of CN108131600A publication Critical patent/CN108131600A/en
Pending legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S8/00—Lighting devices intended for fixed installation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
    • F21V29/506—Cooling arrangements characterised by the adaptation for cooling of specific components of globes, bowls or cover glasses

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a kind of Projecting Lamp 10, including：Stent 11, pedestal 12, LED light 13, reflector 14, cooling fin 15 and lens 16；Wherein, the pedestal 12 is located on the stent 11；The LED light 13 is located at 12 upper surface of pedestal；The reflector 14 is respectively positioned on 12 upper surface of pedestal and is set in turn in the outside of the LED light 13 with the cooling fin 15；The lens 16 are located at 14 top of reflector.Projecting Lamp provided by the invention by setting cooling fin on the outside of LED light, improves the heat dissipation effect of Projecting Lamp, extends the service life of Projecting Lamp；In addition, by the way that blue-ray LED and yellow light LED are set on the same chip so that the colour temperature of Projecting Lamp adjusts softer.

Description

Projecting Lamp
Technical field
The invention belongs to lighting areas, and in particular to a kind of Projecting Lamp.
Background technology
Projecting Lamp is a kind of projection illumination lamps and lanterns simple in structure, easy to use and flexible, is mainly used for large area operation field The places such as ore deposit, contour of building, stadium, viaduct, monument, park and flower bed.
Current Projecting Lamp is substantially using LED chip as its light emitting source, since the brightness requirement of Projecting Lamp is higher, Its light emitting source generally use high-power LED chip, under the conditions of working long hours, can generate a large amount of heat.Due to heat dissipation Improper measures so that in the high temperature environment, device aging is serious for core component long-term work, highly shortened making for Projecting Lamp Use the service life.
Invention content
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of good heat dissipation effect, high reliability Projecting Lamp.The Projecting Lamp 10 includes：Stent 11, pedestal 12, LED light 13, reflector 14, cooling fin 15 and lens 16；Wherein,
The pedestal 12 is located on the stent 11；
The LED light 13 is located at 12 upper surface of pedestal；
The reflector 14 is respectively positioned on 12 upper surface of pedestal and is set in turn in the LED light with the cooling fin 15 13 outside；
The lens 16 are located at 14 top of reflector.
In one embodiment of the invention, the pedestal 12 is made by aluminum material forms.
In one embodiment of the invention, the cooling fin 15 is made by aluminum material forms.
In one embodiment of the invention, 15 outer surface of cooling fin is provided with concave channels.
In one embodiment of the invention, the lens 16 are made by tempered glass forms.
In one embodiment of the invention, it is provided with silica gel sealing ring between the lens 16 and the reflector 14.
In one embodiment of the invention, the LED light 13 includes：
Heat-radiating substrate 21；
LED chip is arranged on the heat-radiating substrate 21；
Layer of silica gel, including being set in turn in the first lens jacket 22 of the LED chip upper surface, the first encapsulated layer 23, Two lens jackets 24 and the second encapsulated layer 25, wherein, the refractive index of first lens jacket 22 is more than first encapsulated layer 23 Refractive index, second lens jacket 24 are more than the refractive index of second encapsulated layer 25, the refractive index of first encapsulated layer 23 Less than the refractive index of second encapsulated layer 25.
In one embodiment of the invention, the LED chip includes：Conductive substrates 31, reflective layer 32, blue light epitaxial layer 33rd, yellow light epitaxial layer 34, separation layer 35, electrode 36 and passivation layer 37；Wherein,
The reflective layer 32 is set in the conductive substrates 31；
The blue light epitaxial layer 33, the yellow light epitaxial layer 34 and the separation layer 35 may be contained on the reflective layer 32 And the separation layer 35 is between the blue light epitaxial layer 33 and the yellow light epitaxial layer 34；
The electrode 36 is respectively arranged on the blue light epitaxial layer 33 and the yellow light epitaxial layer 34；
The passivation layer 37 is covered on the blue light epitaxial layer 33, the yellow light epitaxial layer 34 and the separation layer 35.
Compared with prior art, the present invention at least has the advantages that：
1st, Projecting Lamp provided by the invention by setting cooling fin on the outside of LED light, improves the heat dissipation effect of Projecting Lamp Fruit extends the service life of Projecting Lamp；
2nd, in Projecting Lamp provided by the invention, light source by blue-ray LED and yellow light LED by being arranged on same chip On so that the colour temperature of Projecting Lamp adjusts softer.
Description of the drawings
Fig. 1 is a kind of structure diagram of Projecting Lamp provided in an embodiment of the present invention；
Fig. 2 is a kind of structure diagram of LED light provided in an embodiment of the present invention；
Fig. 3 is a kind of structure diagram of LED chip provided in an embodiment of the present invention；
Fig. 4 is a kind of LED light principle of luminosity schematic diagram provided in an embodiment of the present invention；
Fig. 5 A are a kind of arrangement schematic diagram of multiple hemispherical lens provided in an embodiment of the present invention；
Fig. 5 B are the arrangement schematic diagram of the multiple hemispherical lens of another kind provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail With reference to embodiment.But this should not be interpreted as to the present invention The range of above-mentioned theme is only limitted to following embodiment, all models that the present invention is belonged to based on the technology that the content of present invention is realized It encloses.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of structure diagram of Projecting Lamp provided in an embodiment of the present invention.The Projecting Lamp 10 wraps It includes：Stent 11, pedestal 12, LED light 13, reflector 14, cooling fin 15 and lens 16；Wherein,
The pedestal 12 is located on the stent 11；
The LED light 13 is located at 12 upper surface of pedestal；
The reflector 14 is respectively positioned on 12 upper surface of pedestal and is set in turn in the LED light with the cooling fin 15 13 outside；
The lens 16 are located at 14 top of reflector.
Projecting Lamp provided in this embodiment has carried out optimizing thermal solution design, good heat dissipation effect, structure near its light source Simply, service life is long.
Embodiment two
The present embodiment is that the principle of the present invention and realization method are further described on the basis of embodiment one.
Specifically, the connecting portion of the pedestal 12 and the stent 11 is adjustable angle structure.In practicing, light projector The irradiating angle of lamp 10 is often different, therefore is designed as adjustable angle structure here, to ensure that it is used in various places.
Preferably, the pedestal 12 is made to be formed by aluminum material with the cooling fin 15.Aluminum material density is small, price It is low, it is a kind of good heat sink material, is widely used in electronic product.
Further, 15 outer surface of cooling fin is provided with concave channels.In 15 outer surface of cooling fin, spill ditch is set The purpose of slot is for increasing heat radiation area, to improve its radiating efficiency.
Preferably, the reflector 163 is high-purity aluminum material.Because the cost of rafifinal reflector is relatively low, heat resistance It is good, and also have the effect of heat dissipation.
Preferably, the reflector 14 is made by PPS materials forms.PPS materials have heat safe characteristic.Due to light projector LED light 13 can generate a large amount of heat in lamp 10, cause internal temperature higher, and PPS materials will not generate change at this temperature Shape.In addition, PPS materials also have the characteristics such as corrosion-resistant and superior mechanical performance, therefore can be as the material of reflector.
Preferably, the lens 16 are made by tempered glass forms.Tempered glass have intensity it is big, it is non-breakable, be easy to Processing, the features such as translucency is good, therefore can preferably make the material of lens 16.
Further, it is provided with silica gel sealing ring between the lens 16 and the reflector 14.The silica gel sealing ring is used In preventing steam from passing in and out to inside Projecting Lamp 10, play a protective role to each device in its inside.
In addition, in order to improve the luminous efficiency of LED light 13 and heat dissipation effect, design is also optimized to its structure, has Body, Fig. 2 is referred to, Fig. 2 is a kind of structure diagram of LED light provided in an embodiment of the present invention, which includes：
Heat-radiating substrate 21；
LED chip is arranged on the heat-radiating substrate 21；
Layer of silica gel, including being set in turn in the first lens jacket 22 of the LED chip upper surface, the first encapsulated layer 23, Two lens jackets 24 and the second encapsulated layer 25, wherein, the refractive index of first lens jacket 22 is more than first encapsulated layer 23 Refractive index, second lens jacket 24 are more than the refractive index of second encapsulated layer 25, the refractive index of first encapsulated layer 23 Less than the refractive index of second encapsulated layer 25.
First lens jacket 22 and second lens jacket 24 are made of respectively multiple hemispherical lens.
Further, second lens jacket 24 and second encapsulated layer 25 contain fluorescent powder.
Further, 21 material of heat-radiating substrate is solid copper coin, and the thickness of the heat-radiating substrate 21 is more than 0.5 milli Rice, less than 10 millimeters.
Further, the refractive index of first lens jacket 22 is more than the refractive index of first encapsulated layer 23, and described the Two lens jackets 24 are more than the refractive index of second encapsulated layer 25, and the refractive index of first encapsulated layer 23 is less than second envelope Fill the refractive index of layer 25.
Further, the upper surface of second encapsulated layer 25 is arc.
Further, first lens jacket 22 and first encapsulated layer 23 are made of high temperature resistant silica gel.
Further, a diameter of 10-200 microns of multiple hemispherical lens, and multiple hemispherical lens are equal Even to be alternatively arranged, spacing is 10-200 microns.
Further, it the rectangular arrangement of multiple hemispherical lens or is staggered.
Further, stent is further included, the heat-radiating substrate 21 is fixed on by buckle or viscose glue mode on the stent.
The first lens jacket and the second lens jacket are being set in the present solution, passing through so that illumination is more concentrated, and by the second envelope The upper surface of dress layer is set as arc, carries out shaping to light beam, avoids increase extra lens, reduce production cost；Pass through In the second lens jacket and the second encapsulated layer setting fluorescent powder, avoid and fluorescent powder is applied directly on LED chip, solve The problem of quantum efficiency of caused fluorescent powder declines under hot conditions；Using variety classes silica gel and phosphor gel refractive index not The characteristics of same, the refractive index of the first encapsulated layer are less than the refractive index of the second encapsulated layer, and the refractive index of the first lens jacket is more than first The refractive index of encapsulated layer, the refractive index of the second lens jacket be not only more than the refractive index of the first encapsulated layer, but also more than the second encapsulated layer Refractive index, this kind of set-up mode can be to avoid total reflection so that the light that LED chip is sent out can more shine through encapsulating material It is shot out；By using different arrangement modes to hemispherical lens, it is ensured that the light of light source is uniformly distributed in concentration zones； For the embodiment of the present invention by setting double lens layer, lens can change the direction of propagation of light, can effectively inhibit total reflection effect Should, be conducive to outside more light emittings to LED, improve the luminous efficiency of LED.
Further, the LED chip is gallium nitride base chip.
Specifically, referring to Fig. 3, Fig. 3 is a kind of structure diagram of LED chip provided in an embodiment of the present invention；The LED Chip includes：Conductive substrates 31, reflective layer 32, blue light epitaxial layer 33, yellow light epitaxial layer 34, separation layer 35, electrode 36 and passivation Layer 37；Wherein,
The reflective layer 32 is set in the conductive substrates 31；
The blue light epitaxial layer 33, the yellow light epitaxial layer 34 and the separation layer 35 may be contained on the reflective layer 32 And the separation layer 35 is between the blue light epitaxial layer 33 and the yellow light epitaxial layer 34；
The electrode 36 is respectively arranged on the blue light epitaxial layer 33 and the yellow light epitaxial layer 34；
The passivation layer 37 is covered on the blue light epitaxial layer 33, the yellow light epitaxial layer 34 and the separation layer 35.
Further, which includes：First GaN buffer layers, the first GaN stabilized zones, the first n-type GaN layer, First active layer, the first AlGaN barrier layers and the first p-type GaN layer；
First p-type GaN layer, the first AlGaN barrier layers, first active layer 134, the first N-shaped GaN Floor, the first GaN stabilized zones and the first GaN buffer layers stack gradually and specify area in the reflective layer upper surface first Domain.
Wherein, the thickness of the first GaN buffer layers is 3000~5000nm, preferably 4000nm；
The thickness of first GaN stabilized zones is 500~1500nm, preferably 1000nm；
The thickness of first n-type GaN layer is 200~1000nm, and preferably 400nm, doping concentration is 1 × 1018~5 × 1019cm-3, preferably 1 × 1019cm-3；
First active layer is the first multiplet formed by the first InGaN Quantum Well and the first GaN potential barriers, this more than first First InGaN Quantum Well described in weight structure and the first GaN potential barriers alternately stacked period are 8~30, preferably 20；Wherein, The thickness of first InGaN Quantum Well is 1.5~3.5nm, preferably 2.8nm；The thickness of first GaN potential barriers is 5~10nm, preferably For 5nm；The content of In is according to depending on optical wavelength in first InGaN Quantum Well, and content is higher, and optical wavelength is longer, usually 10~ 20%；
The thickness on the first AlGaN barrier layers is 10~40nm, preferably 20nm；
The thickness of first p-type GaN layer is 100~300nm, preferably 200nm.
Yellow light epitaxial layer 34 includes：2nd GaN buffer layers, the 2nd GaN stabilized zones, the second n-type GaN layer, the second active layer, 2nd AlGaN barrier layers and the second p-type GaN layer；
Second p-type GaN layer, the 2nd AlGaN barrier layers, second active layer, second n-type GaN layer, The 2nd GaN stabilized zones and the 2nd GaN buffer layers are stacked gradually specifies region in the reflective layer upper surface second.
Wherein, the thickness of the 2nd GaN buffer layers is 3000~5000nm, preferably 4000nm；
The thickness of 2nd GaN stabilized zones is 500~1500nm, preferably 1000nm；
The thickness of second n-type GaN layer is 200~1000nm, and preferably 400nm, doping concentration is 1 × 1018~5 × 1019cm-3, preferably 1 × 1019cm-3；
Second active layer is the second multiplet formed by the second InGaN Quantum Well and the 2nd GaN potential barriers, and second is multiple 2nd InGaN Quantum Well described in structure and the 2nd GaN potential barriers alternately stacked period are 8~30, preferably 20；Wherein, The thickness of two InGaN Quantum Well is 1.5~3.5nm, preferably 2.8nm；5~10nm of the 2nd GaN potential barriers, preferably 5nm；The The content of In is according to depending on optical wavelength in two InGaN Quantum Well, and content is higher, and optical wavelength is longer, and usually 20~30%；
The thickness on the 2nd AlGaN barrier layers is 10~40nm, and the component ratio of preferably 20nm, wherein Al are more than 70%；
The thickness of second p-type GaN layer is 100~300nm, preferably 200nm.
Preferably, separation layer and passivation material are silica；Wherein, the thickness of separation layer is 50~150nm, blunt The thickness for changing layer is 300~800nm.
Wherein, blue light epitaxial layer 33 is respectively formed blue-ray LED and yellow light LED, and containing nitridation with yellow light epitaxial layer 34 Gallium material.By the way that blue-ray LED and yellow light LED are integrated on the same chip, on the one hand, fluorescent powder can be reduced in encapsulation Dosage, on the other hand, colour temperature adjust more flexible.In addition, conductive substrates 31 can give out the heat that active layer generates It goes, so as to improve the heat dissipation effect of LED light.
Embodiment three
Incorporated by reference to shown in Fig. 2, Fig. 4 and Fig. 5 A and Fig. 5 B, Fig. 2 is a kind of knot of LED light provided in an embodiment of the present invention Structure schematic diagram；Fig. 4 is a kind of LED light principle of luminosity schematic diagram provided in an embodiment of the present invention；Fig. 5 A are carried for the embodiment of the present invention A kind of arrangement schematic diagram of the multiple hemispherical lens supplied；Fig. 5 B are saturating for the multiple hemisphericals of another kind provided in an embodiment of the present invention The arrangement schematic diagram of mirror.
Wherein, LED light provided in an embodiment of the present invention, including：
Heat-radiating substrate 21；
LED chip is arranged on the package cooling substrate 21；
Layer of silica gel, including being set in turn in the first lens jacket 22 of the LED chip upper surface, the first encapsulated layer 23, Two lens jackets 24 and the second encapsulated layer 25, wherein, first lens jacket 22 and second lens jacket 24 are respectively by multiple half Sphere lens form.
It follows that in the LED light of the embodiment of the present invention, the first lens jacket 22 and the second lens jacket 24 stack, and are formed more Layer lens arrangement, this kind of structure so that illumination is more uniform in concentration zones, and the first lens jacket 22 for being contacted with LED chip and First encapsulated layer 23 does not contain fluorescent powder, falls the light absorption to radiate backward this avoid chip, is taken so improving Light efficiency.
In embodiments of the present invention, LED chip be gallium nitride base blue light chip, second lens jacket 24 and described second Encapsulated layer 25 contains yellow fluorescent powder, when gallium nitride base blue light chip light emitting, as shown in figure 4, LED chip is irradiated to yellow fluorescence When on powder, excitation yellow fluorescent powder, which shines, ultimately forms white light, and LED chip is detached with fluorescent powder in this way, is solved in high temperature Under the conditions of caused fluorescent powder quantum efficiency decline the problem of.
In the embodiment of the present invention, 21 material of heat-radiating substrate is solid copper coin, and the thickness of the heat-radiating substrate 21 is big In 0.5 millimeter, less than 10 millimeters, wherein, the thermal capacitance of copper coin is big, and thermal conductivity is good, the heat that generates when LED chip works, can be with It quickly move through solid copper coin to distribute, and the thickness of heat-radiating substrate 21 is between 0.5-10mm, thickness is larger can be with 21 temperature distortion of heat-radiating substrate is prevented, ensures that heat-radiating substrate 21 is in close contact with LED chip, ensures heat dissipation effect.
In the embodiment of the present invention, the refractive index of first lens jacket 22 is more than the refractive index of first encapsulated layer 23, Second lens jacket 24 is more than the refractive index of second encapsulated layer 25, and the refractive index of first encapsulated layer 23 is less than described The refractive index of second encapsulated layer 25.In the embodiment of the present invention, multiple hemisphericals on the first lens jacket 22 and the second lens jacket 24 The material of lens can be mixed by polycarbonate, polymethyl methacrylate and glass, according to the difference of each ingredient The refractive index of adjustable hemispherical lens, the first encapsulated layer 23 do not contain fluorescent powder, and main composition material can be organosilicon Material etc., and the material of the second encapsulated layer 25 can be methyl silicone rubber and phenyl high refractive index organic silicon rubber mixes, In the embodiment of the present invention, the refractive index of lens jacket is more than the refractive index of encapsulated layer, and the refractive index of encapsulated layer increases successively from bottom to top Greatly, this kind of set-up mode can preferably inhibit total reflection phenomenon so that illumination maximumlly shines out, and total reflection is avoided to make It obtains light and is packaged structure and absorbs and become heat, improve efficiency of light extraction.
It should be noted that in the embodiment of the present invention, the refractive index of the second encapsulated layer 25 is the smaller the better, no more than 1.5, with It avoids forming larger refringence with outside air, leads to light total reflection, packed material absorption switchs to heat, influences light extraction Efficiency.
It should be noted that in the embodiment of the present invention, multiple first hemispherical lens are included on the first lens jacket 22, those First hemispherical lens is " planoconvex lens ", focal length f=R/ (n2-n1), wherein, n2 is the refractive index and the of the first lens jacket 22 The refractive index of two lens jackets 24 is averaged, and n1 is the average value for taking second lens jacket refractive index of two layers of encapsulated layer about 24 (refractive index of the first encapsulated layer 23 is less than the second encapsulated layer 25, but the refractive index value more phase of the two in the embodiment of the present invention Approximation, refringence are little), R is the radius of the first hemispherical lens.
In order to which, to gather state, the present invention is implemented when ensureing that light reaches the second lens jacket 24 after the outgoing of the first lens jacket 22 In example, the height of the distance between the first lens jacket 22 and the second lens jacket 24 L should be within 2 times of focal lengths namely the range of L No more than 2R/ (n2-n1).
In addition, in the embodiment of the present invention, the thickness of the second encapsulated layer 25 is thicker, the top surface of the second lens jacket 24 to the second envelope The upper surface of layer 25 is filled generally between 50-500 microns.
In the embodiment of the present invention, the upper surface of second encapsulated layer 25 is arc, and the arc is specifically as follows hemisphere Shape, parabolic type or pancake, wherein hemispherical beam angle are maximum, are suitable for general lighting application；Paraboloid beam angle is most It is small, it is suitable for local lighting application；And pancake falls between, and is suitable for guidance lighting；It therefore, can be according to products application Place selects specific shape, to reaching best using effect.Intermediate high in this way, the low surface structure in both sides causes the Two encapsulated layers 25 have the function of lens, when illumination is mapped to the second 25 surface of encapsulated layer, by the shaping of the second encapsulated layer 25, So that illumination is more concentrated uniformly, and does not need to increase outer lens, production cost is reduced.
During due to LED operation, a large amount of heat can be generated, silica gel material is caused, which to be heated, can occur yellow, influence lighting color And product service life, therefore, the first lens jacket 22 being in direct contact in the embodiment of the present invention with LED chip and the first envelope Dress layer 23 is made of high temperature resistant silica gel.
In the embodiment of the present invention, a diameter of 10-200 microns of multiple hemispherical lens, and multiple hemisphericals Lens uniform intervals arrange, and spacing is 10-200 microns, as shown in Fig. 2, a diameter of 2R of multiple hemispherical lens, between 10- Between 200 microns, it should be noted that the diameter of multiple hemispherical lens can be the same or different, two neighboring hemisphere The distance between shape lens are A, and the range of A is between 10-200 microns, the distance between adjacent two hemispherical lens It is the smaller the better, and spacing A can be different, can also be evenly distributed, the present embodiment is without limitation.
In the embodiment of the present invention, appropriate restriction has also been carried out to the arrangement mode of multiple hemispherical lens, as shown in Figure 5A, The rectangular arrangement of multiple hemispherical lens or as shown in Figure 5 B, multiple hemispherical lens are staggered.It is specifically, of the invention In embodiment, the first lens jacket 22 uses rectangular arranged, and the second lens jacket 24 is using being staggered or mutually exchanging, with reality The staggered effect of hemispherical lens of existing first lens jacket 22 and the second lens jacket 24, being staggered can be by adjacent lens Between light gather, generate focussing force.
And when the first lens jacket 22 is consistent with the arrangement mode of the hemispherical lens of the second lens jacket 24, it can be to LED The rambling light that chip generates carries out shaping, gathers light.
In the embodiment of the present invention, the encapsulating structure further includes stent, and heat-radiating substrate 21 is fixed on stent, fixed form There are the modes such as buckle, viscose glue.
Specifically, in the embodiment of the present invention, heat-radiating substrate 21 is solid copper substrate, the thickness D of heat-radiating substrate 21 between Between 0.5-10mm, the width W of heat-radiating substrate 21 is cut according to the size of LED chip, is not limited herein, copper substrate Thermal capacitance is big, and thermal conductivity is good, and is not easy temperature distortion so that more preferable to the thermal diffusivity of LED chip.First lens jacket 22, each The radius of hemispherical lens is R, and the spacing of two neighboring hemispherical lens is A, the top surface of the first lens jacket 22 to the second lens The distance of the bottom surface of layer 24 is L, and for L between 0-2R/ (n2-n1), the second lens jacket 24 is set to the upper of the first encapsulated layer 23 Square, the radius of multiple hemispherical lens on the second lens jacket 24 is also R, and multiple hemispherical lens on the second lens jacket 24 Top surface to the upper surface of the second encapsulated layer 25 distance between 50-500 microns, in the embodiment of the present invention, the second encapsulated layer 25 Upper surface for arc, form a larger lens, to carry out secondary reshaping to light beam, and it is external thoroughly to avoid increase Mirror, therefore reduce production cost.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although The present invention is described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that：It still may be used To modify to the technical solution recorded in foregoing embodiments or carry out equivalent replacement to which part technical characteristic； And these modification or replace, various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution spirit and Range.

Claims (8)

1. a kind of Projecting Lamp (10), which is characterized in that including：Stent (11), pedestal (12), LED light (13), reflector (14), Cooling fin (15) and lens (16)；Wherein,
The pedestal (12) is on the stent (11)；
The LED light (13) is positioned at the pedestal (12) upper surface；
The reflector (14) is respectively positioned on the pedestal (12) upper surface and is set in turn in the LED with the cooling fin (15) The outside of lamp (13)；
The lens (16) are positioned at the reflector (14) top.
2. Projecting Lamp (10) according to claim 1, which is characterized in that the pedestal (12) is made by aluminum material to be formed.
3. Projecting Lamp (10) according to claim 1, which is characterized in that the cooling fin (15) makes shape by aluminum material Into.
4. Projecting Lamp (10) according to claim 1, which is characterized in that cooling fin (15) outer surface is provided with spill Groove.
5. Projecting Lamp (10) according to claim 1, which is characterized in that the lens (16) make shape by tempered glass Into.
6. Projecting Lamp (10) according to claim 1, which is characterized in that the lens (16) and the reflector (14) it Between be provided with silica gel sealing ring.
7. Projecting Lamp (10) according to claim 1, which is characterized in that the LED light (13) includes：
Heat-radiating substrate (21)；
LED chip is arranged on the heat-radiating substrate (21)；
Layer of silica gel, including being set in turn in the first lens jacket (22) of the LED chip upper surface, the first encapsulated layer (23), Two lens jackets (24) and the second encapsulated layer (25), wherein, the refractive index of first lens jacket (22) is more than the described first encapsulation The refractive index of layer (23), second lens jacket (24) is more than the refractive index of second encapsulated layer (25), first encapsulation The refractive index of layer (23) is less than the refractive index of second encapsulated layer (25).
8. Projecting Lamp (10) according to claim 7, which is characterized in that the LED chip includes：Conductive substrates (31), Reflective layer (32), blue light epitaxial layer (33), yellow light epitaxial layer (34), separation layer (35), electrode (36) and passivation layer (37)；Its In,
The reflective layer (32) is set in the conductive substrates (31)；
The blue light epitaxial layer (33), the yellow light epitaxial layer (34) and the separation layer (35) may be contained within the reflective layer (32) on and the separation layer (35) is between the blue light epitaxial layer (33) and the yellow light epitaxial layer (34)；
The electrode (36) is respectively arranged on the blue light epitaxial layer (33) and the yellow light epitaxial layer (34)；
The passivation layer (37) is covered in the blue light epitaxial layer (33), the yellow light epitaxial layer (34) and the separation layer (35) On.
CN201711382583.9A 2017-12-20 2017-12-20 Projecting Lamp Pending CN108131600A (en)

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CN108131600A true CN108131600A (en) 2018-06-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109386783A (en) * 2018-11-28 2019-02-26 苏州晶品新材料股份有限公司 Landscape type headlamp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109386783A (en) * 2018-11-28 2019-02-26 苏州晶品新材料股份有限公司 Landscape type headlamp

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