CN113410372A - Light-emitting device packaging structure - Google Patents

Light-emitting device packaging structure Download PDF

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Publication number
CN113410372A
CN113410372A CN202110672447.3A CN202110672447A CN113410372A CN 113410372 A CN113410372 A CN 113410372A CN 202110672447 A CN202110672447 A CN 202110672447A CN 113410372 A CN113410372 A CN 113410372A
Authority
CN
China
Prior art keywords
light
emitting element
light emitting
fluorescent powder
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110672447.3A
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Chinese (zh)
Inventor
杨华
李燕
伊晓燕
王军喜
李晋闽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Semiconductors of CAS
Original Assignee
Institute of Semiconductors of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Semiconductors of CAS filed Critical Institute of Semiconductors of CAS
Priority to CN202110672447.3A priority Critical patent/CN113410372A/en
Publication of CN113410372A publication Critical patent/CN113410372A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium

Abstract

The invention discloses a light-emitting device packaging structure, belonging to the packaging technical field, the packaging structure comprises: a light emitting element; a heat sink on which the light emitting element is fixed; the fluorescent powder sheet comprises a substrate and a fluorescent powder layer, and light emitted by the light-emitting element passes through the fluorescent powder layer and is converted by the fluorescent powder layer; the shell is connected with the fluorescent powder sheet and the radiator and used for reflecting the light rays of the light-emitting element to enter the fluorescent powder sheet and then to be emitted; and the light homogenizing element is arranged between the light emitting element and the fluorescent powder sheet and is used for homogenizing the light emitted by the light emitting element.

Description

Light-emitting device packaging structure
Technical Field
The disclosure relates to the field of packaging technology, and in particular relates to a light emitting device packaging structure.
Background
In a light source of a conventional LED/LD (laser disc, laser video disc), a chip is coated with phosphor, and although white light can be seen, the light source has low luminous efficiency, strong glare and strong directionality. And the light source is usually lambertian or gaussian, which results in poor optical performance of the device.
With the development of power and integration of the lighting device, the fluorescent powder material is severely thermally quenched due to the large amount of heat released from the chip, which results in color shift and low thermal stability of the white light source. In order to prevent the phosphor layer from overheating, many current device designs use remote phosphor, which reduces the thermal attenuation effect of the temperature generated by the chip on the phosphor. However, this design does not fundamentally solve the heat dissipation problem because it does not provide any means for dissipating heat from the phosphor layer, resulting in poor thermal performance of the device.
Disclosure of Invention
The present disclosure provides a light emitting device package structure to solve the problems of poor optical performance and poor thermal performance proposed in the background art.
In view of the above problems, the present disclosure provides a light emitting device package structure including:
a light emitting element;
a heat sink on which the light emitting element is fixed;
the fluorescent powder sheet comprises a substrate and a fluorescent powder layer, and light emitted by the light-emitting element passes through the fluorescent powder layer and is converted by the fluorescent powder layer;
a housing connecting the phosphor sheet and the heat sink, the housing being adapted to reflect light from the light emitting element into the phosphor sheet and emit the light;
and a light homogenizing element arranged between the light emitting element and the fluorescent powder sheet for homogenizing the light emitted by the light emitting element.
According to an embodiment of the present disclosure, the heat dissipation manner of the heat sink includes at least one of: the heat dissipation device comprises a heat dissipation fin, an air cooling heat dissipation fin, a water cooling heat dissipation fin, a heat pipe heat dissipation fin, a semiconductor refrigeration fin, a compressor auxiliary heat dissipation fin and a liquid nitrogen heat dissipation fin.
According to the embodiment of the present disclosure, the phosphor sheet further includes: and the antireflection layer is plated on the bottom surface of the substrate, an aluminum nitride layer or a diamond layer is arranged between the substrate and the antireflection layer, and the aluminum nitride layer is formed by a metal organic chemical vapor deposition or magnetron sputtering deposition method.
According to an embodiment of the present disclosure, the light emitting element is an LED light source or a laser light source, the wavelength range of the light emitting element is one or a combination of ultraviolet light, visible light, or infrared light, and the light emitting element is connected to the heat sink by a gold wire or by welding.
According to an embodiment of the present disclosure, the light emitting element is a light emitting chip or a light source package.
According to an embodiment of the present disclosure, the cross-sectional shape of the substrate includes one of: the substrate is rectangular, square, free-form surface or semicircular, the upper surface of the substrate is a frosted surface, the thickness of the substrate is 0.1 mu m-10mm, and the substrate is made of sapphire glass or quartz glass;
the fluorescent powder layer is positioned on the upper surface of the substrate and is a mixture of one or more kinds of fluorescent powder, and the mixed matrix of the fluorescent powder layer is one of silica gel, epoxy resin, glass powder and spin-on glass.
According to the embodiment of the disclosure, the upper surface of the radiator is plated with a reflecting layer, and the reflecting layer is realized by evaporating a metal reflecting layer or pasting reflecting paper.
According to an embodiment of the present disclosure, the light uniformizing element is located on or directly above the surface of the light emitting element, and a size of the light uniformizing element is greater than or equal to a size of the light emitting element and is less than or equal to a size of the phosphor sheet.
According to the embodiment of the disclosure, the material of the light homogenizing element is ground sapphire glass or quartz glass, and the roughness of the light homogenizing element is 0.1nm-10 μm.
According to the embodiment of the disclosure, the inner wall of the housing is deposited with a diffuse reflection layer or a diffuse reflection paper layer, and the material of the housing includes one of the following: metal, plastic, glass, ceramic.
The invention provides a light-emitting device packaging structure, which is mainly used for dissipating heat generated by a light-emitting element through the arrangement of a radiator, so that the heat transfer to fluorescent powder is reduced fundamentally, the fluorescent powder can work at a lower temperature, higher fluorescent powder conversion efficiency is achieved, the heat damage of the fluorescent powder is reduced, a substrate is arranged at the bottom of the fluorescent powder layer and is in direct contact with the substrate, the heat dissipation effect of the fluorescent powder layer is increased, and the overall thermal performance of the device is improved; the light-homogenizing element is arranged to further diffuse the light emitted by the light-emitting element, so that the overall optical performance of the device is improved.
Drawings
The foregoing and other objects, features and advantages of the disclosure will be apparent from the following description of embodiments of the disclosure, which proceeds with reference to the accompanying drawings, in which:
fig. 1 schematically shows a cross-sectional schematic view of a first embodiment of the disclosure;
FIG. 2 schematically illustrates a cross-sectional view of a phosphor patch according to an embodiment of the disclosure;
fig. 3 schematically shows a cross-sectional schematic view of a second embodiment of the disclosure.
In the figure: 1-radiator, 2-luminous element, 3-shell, 4-dodging element, 5-fluorescent powder sheet, 51-antireflection layer, 52-substrate and 53-fluorescent powder layer.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
Where a convention analogous to "at least one of A, B and C, etc." is used, in general such a construction is intended in the sense one having skill in the art would understand the convention (e.g., "a system having at least one of A, B and C" would include but not be limited to systems that have a alone, B alone, C alone, a and B together, a and C together, B and C together, and/or A, B, C together, etc.).
As shown in fig. 1, there is provided a light emitting device package structure according to an embodiment of the present disclosure, including: the LED lamp comprises a heat radiator 1, a light emitting element 2, a shell 3, a light homogenizing element 4 and a fluorescent powder sheet 5.
The light emitting element 2 is fixed on the heat sink 1;
the phosphor sheet 5 includes a substrate 52 and a phosphor layer 53, and light emitted from the light emitting element 2 passes through the phosphor layer 53 and is converted by the phosphor layer 53;
the shell 3 is connected with the fluorescent powder sheet 5 and the radiator 1, and the shell 3 is used for reflecting the light of the light-emitting element 2 to enter the fluorescent powder sheet 5 and then to be emitted;
the light uniformizing element 4 is installed between the light emitting element 2 and the phosphor sheet 5 for uniformizing light emitted from the light emitting element 2.
In the embodiment of the present disclosure, the heat sink 1 is mainly used for dissipating heat generated by the light emitting element 2, so as to reduce heat transfer to the phosphor powder, and enable the phosphor powder to work at a lower temperature, thereby achieving a higher phosphor powder conversion efficiency and reducing heat damage of the phosphor powder, the bottom of the phosphor powder layer 53 is provided with the substrate 52, and is in direct contact with the substrate 52, thereby increasing the heat dissipation effect of the phosphor powder layer 53 and improving the overall thermal performance of the device; the light homogenizing element 4 is arranged to further diffuse the light emitted by the light emitting element 2, so that the overall optical performance of the device is improved.
As shown in fig. 1, according to the embodiment of the present disclosure, the heat sink 1 dissipates heat in at least one of the following ways: the heat dissipation device comprises a heat dissipation fin, an air cooling heat dissipation fin, a water cooling heat dissipation fin, a heat pipe heat dissipation fin, a semiconductor refrigeration fin, a compressor auxiliary heat dissipation fin and a liquid nitrogen heat dissipation fin.
The heat dissipation method includes passive heat dissipation and active heat dissipation, in the heat dissipation method, the passive heat dissipation of the heat dissipation fins is passive heat dissipation, and the air-cooled heat dissipation, the water-cooled heat dissipation, the heat pipe heat dissipation, the semiconductor refrigeration fin heat dissipation, the compressor-assisted heat dissipation, and the liquid nitrogen heat dissipation are all active heat dissipation.
As shown in fig. 2, according to an embodiment of the present disclosure, the phosphor sheet 5 further includes: the anti-reflection layer 51 and the anti-reflection layer 51 are plated on the bottom surface of the substrate 52, an aluminum nitride layer or a diamond layer is arranged between the substrate 52 and the anti-reflection layer 51, and the aluminum nitride layer is formed by a metal organic chemical vapor deposition or magnetron sputtering deposition method.
The bottom surface of the substrate 52 is coated with the antireflection layer 51, so that the reflection loss of incident light can be reduced, and the overall optical performance of the device is improved.
The provision of the aluminum nitride layer or the diamond layer having high thermal conductivity can improve the thermal conductivity of the substrate 52, thereby improving the thermal performance of the device.
As shown in fig. 1, according to the embodiment of the present disclosure, the light emitting element 2 is an LED light source or a laser light source, the wavelength range of the light emitting element 2 is one or more combinations of ultraviolet light, visible light, or infrared light, and the light emitting element 2 is connected to the heat sink 1 by gold wire or welding.
The light emitting element 2 is used for emitting light with different wavelengths, and meets the requirements of people on high light color quality and diversification of a light source.
As shown in fig. 1, according to an embodiment of the present disclosure, the light emitting element 2 is a light emitting chip or a light source package.
As shown in fig. 1-3, the cross-sectional shape of the substrate 52 includes one of: the substrate 52 is rectangular, square, free-form surface or semicircular, the upper surface of the substrate 52 is a frosted surface, the thickness of the substrate 52 is 0.1 μm-10mm, the preferred value can be 100 μm, 150 μm and 200 μm, and the substrate 52 is made of sapphire glass or quartz glass;
the phosphor layer 53 is located on the upper surface of the substrate 52 and is a mixture of one or more phosphors, and the mixed matrix of the phosphor layer 53 is one of silica gel, epoxy resin, glass powder, and spin-on glass.
The substrate 52 can be designed into different shapes and angles, so that the overall light effect of the device is uniform, and the light emitting efficiency is improved.
As shown in fig. 1, according to the first embodiment of the present disclosure, the substrate 52 has a rectangular cross-sectional shape.
As shown in fig. 3, according to the second embodiment of the present disclosure, the cross-sectional shape of the substrate 52 is a semicircle, and the substrate 52 in this embodiment further reduces the reflection loss of light emitted from the phosphor layer 53 to the air due to the increased area, so that the light efficiency performance is higher.
The substrate 52 is made of a material with high thermal conductivity, so that the heat dissipation effect of the phosphor layer 53 can be effectively improved.
The frosted surface of the substrate 52 can increase the reflection of light from the substrate 52 to the phosphor particles, so that more light in the light source is scattered, more phosphor light is excited, and the role uniformity, the luminous flux and other optical properties of the light source are improved, wherein the roughness of the frosted surface can be set according to actual requirements.
The phosphor layer 53 may convert at least one light, and the phosphor layer 53 absorbs the light emitted from the light source and emits blue, yellow, red, or green light, etc.
As shown in fig. 1, according to the embodiment of the present disclosure, the upper surface of the heat sink 1 is plated with a reflective layer, and the reflective layer is implemented by evaporating a metal reflective layer or attaching reflective paper.
The metal reflecting layer or the reflecting paper is a high-reflecting film layer, namely, an optical film with an increased reflecting function, and the radiator 1 has a reflecting characteristic by arranging the high-reflecting film layer, so that the radiator 1 can act as an emitting layer, and the reflectivity of light is increased.
As shown in fig. 1, according to the embodiment of the present disclosure, the light uniformizing element 4 is located on or directly above the surface of the light emitting element 2, and the size of the light uniformizing element 4 is equal to or larger than the size of the light emitting element 2 and equal to or smaller than the size of the phosphor sheet 5.
As shown in fig. 1, according to the embodiment of the present disclosure, the material of the light uniforming element 4 is frosted sapphire glass or quartz glass, and the roughness of the light uniforming element 4 is 0.1nm-10 μm, and the preferred value may be 2 μm, 3 μm, or 4 μm.
The light homogenizing element 4 is made of transparent material with high thermal conductivity, so that the light transmission can be increased, and the heat dissipation efficiency can be increased.
As shown in fig. 1, according to the embodiment of the present disclosure, a diffuse reflection layer is deposited on the inner wall of the housing 3, or a diffuse reflection paper layer is attached to the inner wall, and the material of the housing 3 includes one of the following: metal, plastic, glass, ceramic.
By the provision of the reflective layer, the casing 3 has a diffuse reflection characteristic, thereby increasing the reflectance of light.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.

Claims (10)

1. A light emitting device package structure comprising:
a light emitting element;
a heat sink on which the light emitting element is fixed;
the fluorescent powder sheet comprises a substrate and a fluorescent powder layer, and light emitted by the light-emitting element passes through the fluorescent powder layer and is converted by the fluorescent powder layer;
the shell is connected with the fluorescent powder sheet and the radiator and used for reflecting the light rays of the light-emitting element to enter the fluorescent powder sheet and then to be emitted;
and the light homogenizing element is arranged between the light emitting element and the fluorescent powder sheet and is used for homogenizing the light emitted by the light emitting element.
2. The package structure of claim 1, wherein the heat spreader dissipates heat in a manner that includes at least one of: the heat dissipation device comprises a heat dissipation fin, an air cooling heat dissipation fin, a water cooling heat dissipation fin, a heat pipe heat dissipation fin, a semiconductor refrigeration fin, a compressor auxiliary heat dissipation fin and a liquid nitrogen heat dissipation fin.
3. The package structure of claim 1, the phosphor patch further comprising: the anti-reflection coating is plated on the bottom surface of the substrate, an aluminum nitride layer or a diamond layer is arranged between the substrate and the anti-reflection coating, and the aluminum nitride layer is formed by a metal organic chemical vapor deposition or magnetron sputtering deposition method.
4. The package structure of claim 1, wherein the light emitting element is an LED light source or a laser light source, the wavelength range of the light emitting element is one or more combinations of ultraviolet light, visible light, or infrared light, and the light emitting element is connected to the heat sink by gold wire or soldering.
5. The package structure of claim 4, wherein the light emitting element is a light emitting chip or a light source package.
6. The package structure according to claim 1, wherein the package structure,
the cross-sectional shape of the substrate comprises one of: the substrate is rectangular, square, free-form surface or semicircular, the upper surface of the substrate is a frosted surface, the thickness of the substrate is 0.1 mu m-10mm, and the substrate is made of sapphire glass or quartz glass;
the fluorescent powder layer is positioned on the upper surface of the substrate and is a mixture of one or more kinds of fluorescent powder, and the mixed matrix of the fluorescent powder layer is one of silica gel, epoxy resin, glass powder and spin-on glass.
7. The package structure of any one of claims 1 to 6, wherein the upper surface of the heat spreader is plated with a reflective layer, and the reflective layer is formed by evaporating a metal reflective layer or attaching reflective paper.
8. The package structure of claim 7, wherein the light homogenizing element is located on or directly above the surface of the light emitting element, and the size of the light homogenizing element is greater than or equal to that of the light emitting element and less than or equal to that of the phosphor flake.
9. The package structure of claim 8, wherein the light homogenizing element is made of frosted sapphire glass or quartz glass, and the roughness of the light homogenizing element is 0.1nm to 10 μm.
10. The package structure of claim 9, wherein the inner wall of the housing is deposited with a metal diffuse reflection layer or a paper layer, and the material of the housing includes one of the following: metal, plastic, glass, ceramic.
CN202110672447.3A 2021-06-17 2021-06-17 Light-emitting device packaging structure Pending CN113410372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110672447.3A CN113410372A (en) 2021-06-17 2021-06-17 Light-emitting device packaging structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110672447.3A CN113410372A (en) 2021-06-17 2021-06-17 Light-emitting device packaging structure

Publications (1)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101865378A (en) * 2010-05-17 2010-10-20 中山大学佛山研究院 LED surface light-emitting lamp
CN102241977A (en) * 2010-05-10 2011-11-16 索尼公司 Green-emitting phosphor particles, method for manufacturing green-emitting phosphor particles, color conversion sheet, light-emitting device, and image display device assembly
CN205680703U (en) * 2016-06-13 2016-11-09 广东科技学院 A kind of high light efficiency LED
CN109478588A (en) * 2016-06-29 2019-03-15 沙特基础工业全球技术公司 Prepare the phosphor film with heat dissipation film
CN109882797A (en) * 2019-03-18 2019-06-14 深圳市丰泰工业科技有限公司 Automobile-used modulated structure
CN110737085A (en) * 2018-07-18 2020-01-31 深圳光峰科技股份有限公司 Wavelength conversion device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102241977A (en) * 2010-05-10 2011-11-16 索尼公司 Green-emitting phosphor particles, method for manufacturing green-emitting phosphor particles, color conversion sheet, light-emitting device, and image display device assembly
CN101865378A (en) * 2010-05-17 2010-10-20 中山大学佛山研究院 LED surface light-emitting lamp
CN205680703U (en) * 2016-06-13 2016-11-09 广东科技学院 A kind of high light efficiency LED
CN109478588A (en) * 2016-06-29 2019-03-15 沙特基础工业全球技术公司 Prepare the phosphor film with heat dissipation film
CN110737085A (en) * 2018-07-18 2020-01-31 深圳光峰科技股份有限公司 Wavelength conversion device
CN109882797A (en) * 2019-03-18 2019-06-14 深圳市丰泰工业科技有限公司 Automobile-used modulated structure

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Application publication date: 20210917