CN209571427U - High-power LED encapsulation substrate and high-power LED encapsulation structure - Google Patents
High-power LED encapsulation substrate and high-power LED encapsulation structure Download PDFInfo
- Publication number
- CN209571427U CN209571427U CN201920447832.6U CN201920447832U CN209571427U CN 209571427 U CN209571427 U CN 209571427U CN 201920447832 U CN201920447832 U CN 201920447832U CN 209571427 U CN209571427 U CN 209571427U
- Authority
- CN
- China
- Prior art keywords
- metallic matrix
- power led
- electrode
- substrate
- thermal insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a kind of high-power LED encapsulation substrate and high-power LED encapsulation structures, the substrate includes metallic matrix, the thermal insulation layer on metallic matrix and the electrode being electrically connected above thermal insulation layer and/or metallic matrix and with metallic matrix, the thermal insulation layer grows formation by scan-type differential arc oxidation method on metallic matrix, and the electrode includes first electrode and second electrode.Substrate of the utility model based on differential arc oxidation can optimize traditional encapsulating structure, reduce the thermal resistance of passage of heat, can effectively solve the heat dissipation problem of great power LED, can be widely used for the preparation of power LED heat dissipating substrate or substrate.
Description
Technical field
The utility model relates to high-power LED encapsulation technical fields, more particularly to a kind of high-power LED encapsulation substrate
And high-power LED encapsulation structure.
Background technique
Differential arc oxidization technique is the metal material surface ceramic skill to grow up on the basis of hard anodising technique
Art, compared with the sufacings such as traditional thermal spraying, laser melting coating, anodic oxidation, differential arc oxidization technique have simple process, easily
In the operation the advantages of, the advantages that thickness of obtained film layer and matrix be combined, good combination property, although differential arc oxidation have it is all
More advantages, usual differential arc oxidation are difficult to implement on the big workpiece in surface, and this severely limits its in engineering further
Using, on the one hand, in traditional differential arc oxidation, entire workpiece needs to be soaked in working solution, results in the wave of electrolyte
Take and the huge test to power；On the other hand, the workpiece surface region of usually only fraction area needs to handle,
Such as exposure surface in a corrosive environment or serve as the secondary surface of friction, therefore whole differential arc oxidation actually cause it is huge
Big waste.
In addition, during micro-arc oxidation treatment, it is micro- that the valve metal in electrolyte can generate under the action of high voltage etc.
Ionic discharge constantly punctures the surface of film, causes to form micropore and micro-crack in ceramic layer, and the micropore of ceramic film is more, causes
Close property is lower, it will significantly reduces the application performances such as the corrosion resistance, insulating properties and heat transmitting of ceramic membrane.This is being limited to a certain degree
Application, such as great power LED, when serving as the insulating layer of power LED heat dissipating substrate using differential arc oxidation film layer, film layer hole
Presence the thermal contact resistance of encapsulation contact interface can be significantly greatly increased, while the presence of hole also influences contact area, makes heat radiation energy
Power is greatly reduced.
Great power LED is the main force of next-generation lighting source of marching toward, but there is also some technologies to ask for great power LED at present
It inscribes urgently to be resolved.In photoelectric conversion, about 80~90% electric energy becomes heat, with LED product power density and envelope
The raising of density is filled, this will cause LED chip internal heat to be assembled, and lead to light extraction efficiency decline, reduced service life etc. one
Series of problems has seriously affected the reliability of LED.Therefore, the solution that effectively radiates must be selected when promoting heavy-power LED product
Certainly scheme.
Currently, ceramic substrate has a better heat dissipation performance than metal substrate, but the complex manufacturing technology of ceramic substrate, at
Originally excessively high to constrain it to a certain extent in the mass application of LED industry.Therefore a kind of lower-cost there is still a need for preparing
Heat-radiating substrate can be together with chip direct package, it is possible to reduce biggish material layer is hindered to heat dissipation in heat dissipation path, into
And the thermal resistance on thermally conductive pathways is reduced to guarantee that the development of great power LED has higher photoelectric conversion efficiency and more preferably thermal diffusivity
Energy.
Therefore, in view of the above technical problems, it is necessary to which a kind of high-power LED encapsulation substrate and great power LED envelope are provided
Assembling structure.
Utility model content
In view of this, the purpose of this utility model is to provide a kind of high-power LED encapsulation substrates and great power LED to seal
Assembling structure.
To achieve the goals above, the technical solution that an embodiment of the present invention provides is as follows:
A kind of high-power LED encapsulation substrate, the substrate include metallic matrix, the insulating heat-conductive on metallic matrix
Layer and the electrode being electrically connected above thermal insulation layer and/or metallic matrix and with metallic matrix, the thermal insulation layer
Formation is grown on metallic matrix by scan-type differential arc oxidation method, the electrode includes the first electrode being oppositely arranged and
Two electrodes.
The thermal insulation layer is the differential arc oxidation film layer with hole as a further improvement of the utility model, micro-
Nano-ceramic powder and/or epoxy resin powder are filled in the hole of arc oxidation film layer.
The differential arc oxidation film layer is differential of the arc ceramic layer as a further improvement of the utility model,.
The metallic matrix is the metallic matrix of integration as a further improvement of the utility model, first electricity
Pole and second electrode are located above thermal insulation layer.
The metallic matrix includes the first metallic matrix for being separated from each other setting as a further improvement of the utility model,
With the second metallic matrix, thermal insulation layer includes the first insulating heat-conductive above the first metallic matrix and the second metallic matrix
Layer and the second thermal insulation layer between the first metallic matrix and the second metallic matrix in gap, the first electrode position
Above the first metallic matrix and thermal insulation layer, second electrode is located above the second metallic matrix and thermal insulation layer.
The substrate includes metal substrate pedestal as a further improvement of the utility model, and the metallic matrix is close
It is pressed on above metal substrate pedestal.
The technical solution that another embodiment of the utility model provides is as follows:
A kind of high-power LED encapsulation structure, the above-mentioned substrate of the high-power LED encapsulation structure are fixed by crystal-bonding adhesive
On the insulating layer square LED chip, positioned at the pad of upper surface of base plate periphery exposed section, the bracket being packaged on substrate, encapsulation
Epoxy lens above substrate, in epoxy lens interior, pad passes through lead and LED chip electricity for the pad, LED chip
Property connection, electrode pin through bracket and with the pad be electrically connected.
The beneficial effects of the utility model are:
The drawbacks of the utility model differential arc oxidation film layer preparation process is simple, has abandoned traditional immersion differential arc oxidation,
Anode and cathode can generate relative motion, can be within the scope of matrix surface subrange, small area by control movable cathode track
Differential arc oxidation is carried out, actually required patterning differential arc oxidation film layer is ultimately formed, can save material, reduce process costs；
The mode of the growth in situ of differential arc oxidation film layer increases the contact area of ceramics with valve metal, is able to satisfy high-power
LED thermal conductivity, insulating properties and corrosion resistance requirement；Differential arc oxidation film layer method for sealing does not need to carry out in the solution, more will not
The additional thickness for increasing differential arc oxidation film layer, the sintering processing of dielectric barrier discharge can make powder and film layer combine closely, no
It is easy to fall off, so that film layer is reached more high compactness requirement；
The utility model can enhance the heat-sinking capability of LED chip from both direction in length and breadth, and packaged type is applicable not only to list
Brilliant LED encapsulation, applies also for the integration packaging of polycrystalline LED.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments recorded in the utility model, for those of ordinary skill in the art, is not making the creative labor
Under the premise of, it is also possible to obtain other drawings based on these drawings.
Fig. 1 a, 1b are the schematic cross-sectional view and overlooking structure diagram of substrate in the utility model embodiment 1；
Fig. 2 is the partial structural diagram of substrate in the utility model embodiment 1；
Fig. 3 a, 3b are the schematic cross-sectional view and overlooking structure diagram of substrate in the utility model embodiment 2；
Fig. 4 is the flow diagram of base plate preparation method in the utility model embodiment 3；
Fig. 5 is the structural representation for the dielectric barrier discharge heating device that powder sintering uses in the utility model embodiment 3
Figure；
Fig. 6 is the structural schematic diagram of high-power LED encapsulation structure in the utility model embodiment 4.
Specific embodiment
In order to make those skilled in the art more fully understand the technical solution in the utility model, below in conjunction with this reality
With the attached drawing in new embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that
The described embodiments are only a part of the embodiments of the utility model, instead of all the embodiments.Based on the utility model
In embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
The range of the utility model protection all should belong in example.
The utility model discloses a kind of high-power LED encapsulation substrates, including metallic matrix, on metallic matrix
Thermal insulation layer and the electrode being electrically connected above thermal insulation layer and/or metallic matrix and with metallic matrix, insulation are led
Thermosphere grows formation by scan-type differential arc oxidation method on metallic matrix, and electrode includes the first electrode being oppositely arranged and the
Two electrodes.
The invention also discloses a kind of preparation methods of high-power LED encapsulation substrate, comprising:
Alloy raw material is cut, is polished, is polished, clean after obtain metallic matrix；
Thermal insulation layer is formed in metal base surface, is grown by scan-type differential arc oxidation method in metal base surface
Differential arc oxidation film layer, and sealing pores are carried out to differential arc oxidation film layer；
It is prepared above thermal insulation layer and/or metallic matrix electrical with the first metallic matrix and the second metallic matrix respectively
The first electrode and second electrode of connection.
In addition, including above-mentioned substrate, passing through die bond the invention also discloses a kind of high-power LED encapsulation structure
Glue is fixed on LED chip above insulating layer, the pad positioned at upper surface of base plate periphery exposed section, the branch that is packaged on substrate
Frame, the epoxy lens being packaged in above substrate, the pad, LED chip in epoxy lens interior, pad by lead with
LED chip is electrically connected, and electrode pin is electrically connected through bracket and with the pad.
The ceramic film that tens microns are grown in valve metal surface in situ in the utility model, is filled out by nano-ceramic powder
It fills the hole of film layer, and with dielectric barrier discharge high temperature sintering ceramic powder, forms the good film layer of compactness, wherein growth in situ
Mode increase ceramics and the heat dissipation area of valve metal, improve heating conduction, be suitable for power LED heat dissipating substrate system
Make, can preferably cater to the market LED radiating requirements.
Go out in aluminium alloy matrix surface regional area growth in situ tens microns of differential of the arc oxygen by selective scanning mode
Change film layer, the thickness of the film layer is significantly less thick than existing insulating layer material on the market.In order to increase the compactness of film layer, selection is adopted
It is good to form compactness with the hole of nano-ceramic powder filling film layer, and with dielectric barrier discharge high temperature sintering ceramic powder
Film layer.According to actual demand, it can control scanning track, form different film patterns.
It is encapsulated about LED, LED chip can be directly encapsulated into film surface and substrate directly contacts, and reduce traditional envelope
The useless thermal resistance of assembling structure bring.
Below in conjunction with specific embodiment, the utility model is described in further detail.
Embodiment 1:
Join Fig. 1 a, Fig. 1 b, shown in Fig. 2, one of the present embodiment high-power LED encapsulation substrate, including metallic matrix
11, the thermal insulation layer 12 on metallic matrix, be located above thermal insulation layer and metallic matrix and electrical with metallic matrix
The electrode 14 of connection and the metal substrate pedestal 13 below metallic matrix 11.Wherein, metallic matrix 11 includes being separated from each other
The first metallic matrix 111 and the second metallic matrix 112 being arranged, the first metallic matrix 111 and the second metallic matrix 112 are tight respectively
It is close to be pressed on above metal substrate pedestal；Electrode includes the first electrode 141 and second electrode 142 being oppositely arranged, first electrode
Above the first metallic matrix 111 and thermal insulation layer 12, second electrode 142 is located at the second metallic matrix 112 and insulation for position 141
12 top of heat-conducting layer.
Wherein, thermal insulation layer 12 grows formation, insulating heat-conductive by scan-type differential arc oxidation method on metallic matrix
Layer 12 include positioned at the first metallic matrix 111 and the top of the second metallic matrix 112 the first thermal insulation layer 121 and be located at the
The second thermal insulation layer 122 between one metallic matrix 111 and the second metallic matrix 112 in gap, the first thermal insulation layer 121
It may be designed to different pattern lines.
Preferably, thermal insulation layer 12 is the differential arc oxidation film layer 1201 with hole, the hole 120 of differential arc oxidation film layer
In be filled with nano-ceramic powder 1202, and be sintered by sintering aid 1203, thermal insulation layer it is micro- with a thickness of 10~100
Rice.Differential arc oxidation film layer 1201 in the present embodiment is differential of the arc ceramic layer, is filled in hole by nano-ceramic powder, at it
Differential arc oxidation film layer may be other insulating heat-conduction material layers in his embodiment, can also pass through epoxy resin powder in hole
It is filled.
The first metallic matrix 111 and 112 material of the second metallic matrix in the present embodiment are aluminium alloy, metal substrate pedestal
13 materials are copper, can select other metal materials in other embodiments.
Embodiment 2:
Join the metallic matrix that the metallic matrix 11 shown in Fig. 3 a, Fig. 3 b, in the present embodiment is integration, first electrode 141
It is located at 12 top of thermal insulation layer with second electrode 142, thermal insulation layer 12 is located at 11 top of metallic matrix, metal substrate pedestal
13 are located at 11 lower section of metallic matrix.
Embodiment 3:
Join shown in Fig. 4, the preparation method of high-power LED encapsulation substrate in the present embodiment, comprising the following steps:
Alloy raw material is cut, is polished, is polished, clean after obtain metallic matrix；
Thermal insulation layer is formed in metal base surface, is grown by scan-type differential arc oxidation method in metal base surface
Differential arc oxidation film layer, and sealing pores are carried out to differential arc oxidation film layer；
It is prepared above thermal insulation layer and/or metallic matrix electrical with the first metallic matrix and the second metallic matrix respectively
The first electrode and second electrode of connection.
Specifically, " differential arc oxidation film layer is grown in metal base surface by scan-type differential arc oxidation method " specifically:
Using metallic matrix as anode, stainless steel tube is as cathode, and sleeve cathode is perpendicular to anode metal matrix surface:
The scanning track for controlling sleeve cathode carries out shuttle-scanning according to predetermined pattern to anode metal matrix, scanned
Working solution is at the uniform velocity sprayed from sleeve cathode in journey, micro-arc discharge region is formed between cathode and anode, in metal base surface
Differential arc oxidation occurs in the range of contacting with working solution, growth obtains differential arc oxidation film layer.
Specifically, " carrying out sealing pores to differential arc oxidation film layer " includes are as follows:
Powder coating is coated with nano-ceramic powder in micro-arc oxidation films layer surface, fills nano-ceramic powder to differential arc oxidation
In the hole of film layer；
Powder sintering is sintered nano-ceramic powder using the discharge wire that dielectric barrier discharge generates, it is preferable that electric discharge
Voltage is 500~2000V of AC, and frequency is 10~1000Hz, and sintering time is 0.5~1.5h.
Specific step is as follows for the preparation method of substrate in the present embodiment:
1, alloy matrix aluminum after being cut, polished by alloy raw material, polished, being cleaned by obtaining.
Sample is cut into Boping plate shape according to suitable dimension by metallographical cutter first, then uses metallic phase polishing
Machine uses the sand paper of 400 mesh, 800 mesh, 1000 mesh, 1500 mesh, 2000 mesh to be polished step by step respectively, then in polishing disk into
Row polishing treatment, wherein grinding and polishing revolving speed is respectively 450rpm and 600rpm.Using dehydrated alcohol or deionized water to polishing after
Sample carry out ultrasonic cleaning 30min, then the sample after ultrasonic cleaning is placed in drying box, 10min is dried, taken
It is spare out.This process need to operate in clean room.
2, thermal insulation layer is to carry out local differential arc oxidation in aluminium alloy matrix surface based on scan-type differential arc oxidization technique
Preparation.
When preparation, using the alloy matrix aluminum after pre-treatment as anode, with the stainless steel tube of small cross sections product
As cathode, sleeve cathode passes through digitlization control perpendicular to the surface at alloy matrix aluminum position to be processed under slower speed
The scanning track of cathode processed implements shuttle-scanning according to predetermined pattern to anode alloy matrix aluminum, completes the differential of the arc oxygen of large area
Change processing.Working solution is at the uniform velocity sprayed from the steel pipe opening, and the process yin-yang the two poles of the earth and working solution form small-sized micro-arc discharge area
Violent micro-arc oxidation process occurs within the scope of the small area that aluminium alloy matrix surface is contacted with solution for domain, can be in workpiece
Surface processes required local differential arc oxidation film layer.
In addition, patterned differential arc oxidation film layer need to carry out sealing pores, using nano-ceramic powder as filler, using hand
The mode of work coating flattens ceramic powder to uniform ground effect, and the high temperature discharge silk then generated using dielectric barrier discharge is right
Powder is sintered to form the good differential arc oxidation film layer of compactness.Differential arc oxidation film layer sealing pores include powder coating with
Two steps of powder sintering:
2.1, the alloy matrix aluminum for being prepared with differential arc oxidation film layer is put into supersonic cleaning machine and cleans 30min, remove table
Face spot, then again to it on heating furnace heat drying, heating temperature to 100 DEG C, after a period of time by nano-ceramic powder with
Sintering aid weighs mixing according to certain mass ratio, and mixture is uniformly coated on above differential arc oxidation film layer, then
Micro- vibration is carried out to powder and pressing handles the micropore for making ceramic powder more uniformly fill film surface, the powder material of selection is
The Al similar with membranous layer ingredient2O3Ceramic powders, average grain diameter 30nm, purity 99.9%, specific surface area 100m2/ g, volume are close
Spend 1.5g/cm3, crystal form is α phase；
2.2, after cooling 5min, film layer is moved on dielectric barrier discharge heating device shown in fig. 5 and is sintered.
Suitable sintering aid reduces the sintering temperature of aluminium oxide ceramics, makes it that can form solid solution and generation with aluminium oxide
Liquid phase reduces the sintering activating energy of aluminium oxide ceramics in this way, further promotes the sintering of aluminium oxide ceramics.
As shown in connection with fig. 5, dielectric barrier discharge heating device include for place the warm table 201 of heated work pieces 10 to be added,
The power supply 202 being connected with warm table, the quartz glass tube 203 above warm table 201 and quartz glass tube 203 and power supply
202 connected conductor heads 204.
Dielectric barrier discharge produces in gap under the action of discharge voltage AC500~2000V, 10~1000Hz of discharge frequency
Raw plasma discharge silk, motion workbench drive the conductor head for being cased with blind hole quartz glass tube to transport along differential arc oxidation track
It is dynamic, and it is made to form larger gap (h 3mm or so) with micro-arc oxidation films layer surface, the high temperature etc. that dielectric barrier discharge generates
Plasma discharge silk carries out the sintering processes of 0.5~1.5h to the nano-ceramic powder on differential arc oxidation film layer.After sintering processes
Ceramic powder can effectively contact with film layer hole and reach densification effects.
3, the preparation of electrode.
It by gold-plated, silver-plated, copper facing or aluminizes above thermal insulation layer and to form metal wire, the first electricity being separated from each other
Pole and second electrode.
Embodiment 6:
Join Fig. 6 and combines Fig. 1 a, Fig. 1 b, shown in Fig. 2, the high-power LED encapsulation structure in the present embodiment, including embodiment
Substrate 10 in 1 is fixed on that LED chip 20 above insulating layer, to be located at 10 upper surface periphery of substrate exposed by crystal-bonding adhesive 21
The pad 30 at place, the bracket 40 being packaged on substrate, the epoxy lens 50 being packaged in above substrate, pad 30, LED chip 20
Inside epoxy lens 50, pad 30 is electrically connected by lead 60 and LED chip 20, and pad 30 is respectively at first electrode
141 and second electrode 142 be electrically connected, electrode pin 70 through bracket 40 and with pad 30 be electrically connected.
Preferably, the pad in the present embodiment is that solder thawing is made by the way of laser thawing, the thickness of pad
It is 10~30 microns, the material of solder is Sn-3.0Ag-0.7Cu.
The utility model is directed to the heat dissipation problem of great power LED, and selection improves its heat dissipation from substrate and encapsulating structure level
Performance.
It is prepared about substrate, selects the preferable aluminium alloy of heating conduction as matrix, by selective scanning mode in base
Body surface face regional area growth in situ goes out tens microns of differential arc oxidation film layer as thermal insulation layer, takes and selectively exists
Aluminum alloy surface carries out differential arc oxidation, and the region of oxidation is combined into a width pattern, for needed for practical application, the utility model is complete
Overcome conventional differential arc oxidation workpiece must be submerged the limitation carried out in the electrolytic solution entirely, greatly compensates for tradition immersion and decline
Arc mode of oxidizing generates the disadvantage that energy consumption is high, waste is more.In order to solve hole in film layer and gap to the insulation of film layer and
The influence of heating conduction, the hole that common micro-arc oxidation treatment is generated using a kind of new secondary complex method and crackle progress
Sealing pores.The hole and crackle of differential arc oxidation film layer are filled by nano-ceramic powder, are then generated with dielectric barrier discharge
The current filament of high-energy density is sintered ceramics, and it is preferably ceramic to form preferable compactness, smooth surface, insulating properties, thermal conductivity
Layer, with conventional film layer sealing of hole mode, if epoxy resin is compared, the utility model sealing of hole mode can not additionally increase film layer
Improving its heating conduction, corrosion resistance, while filler simultaneously can be firmly combined with differential arc oxidation film layer, not easily to fall off.
LED chip is directly encapsulated into upper surface of base plate as substrate material by the substrate about LED encapsulation mainly preparation
Center reduces the overall thermal resistance on heat dissipation channel, reduces the junction temperature of LED chip.The circular radiating layer of LED chip periphery by
In being mixed with heat-conducting glue and grapheme material, the ability that LED chip radiates to periphery is improved.
Therefore, the utility model can improve heat dissipation performance, the heat-radiating substrate based on differential arc oxidation from both direction in length and breadth
Traditional encapsulating structure can be optimized, reduce the thermal resistance of passage of heat, can effectively solve the heat dissipation problem of great power LED, it can be extensive
Preparation for power LED heat dissipating substrate or substrate.
It should be understood that the design of thermal insulation layer is according to great power LED in various embodiments of the utility model
Trace arrangements mode be designed, rational deployment need to be made in conjunction with the actual use scene of practical great power LED, and unlimited
Specific layout in above-described embodiment.
As can be seen from the above technical solutions, the utility model has the following beneficial effects:
The drawbacks of the utility model differential arc oxidation film layer preparation process is simple, has abandoned traditional immersion differential arc oxidation,
Anode and cathode can generate relative motion, can be within the scope of matrix surface subrange, small area by control movable cathode track
Differential arc oxidation is carried out, actually required patterning differential arc oxidation film layer is ultimately formed, can save material, reduce process costs；
The mode of the growth in situ of differential arc oxidation film layer increases the contact area of ceramics with valve metal, is able to satisfy high-power
LED thermal conductivity, insulating properties and corrosion resistance requirement；Differential arc oxidation film layer method for sealing does not need to carry out in the solution, more will not
The additional thickness for increasing differential arc oxidation film layer, the sintering processing of dielectric barrier discharge can make powder and film layer combine closely, no
It is easy to fall off, so that film layer is reached more high compactness requirement；
The utility model can enhance the heat-sinking capability of LED chip from both direction in length and breadth, and packaged type is applicable not only to list
Brilliant LED encapsulation, applies also for the integration packaging of polycrystalline LED.
It is obvious to a person skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and
And without departing substantially from the spirit or essential attributes of the utility model, it can realize that this is practical new in other specific forms
Type.Therefore, in all respects, the present embodiments are to be considered as illustrative and not restrictive, this is practical new
The range of type is indicated by the appended claims rather than the foregoing description, it is intended that containing for the equivalent requirements of the claims will be fallen in
All changes in justice and range are embraced therein.It should not treat any reference in the claims as limiting
Related claim.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (7)
1. a kind of high-power LED encapsulation substrate, which is characterized in that the substrate includes metallic matrix, is located on metallic matrix
Thermal insulation layer and above thermal insulation layer and/or metallic matrix and with metallic matrix be electrically connected electrode, it is described
Thermal insulation layer grows formation by scan-type differential arc oxidation method on metallic matrix, and the electrode includes the be oppositely arranged
One electrode and second electrode.
2. high-power LED encapsulation substrate according to claim 1, which is characterized in that the thermal insulation layer be with
The differential arc oxidation film layer of hole is filled with nano-ceramic powder and/or epoxy resin powder in the hole of differential arc oxidation film layer.
3. high-power LED encapsulation substrate according to claim 2, which is characterized in that the differential arc oxidation film layer is micro-
Arc ceramic layer.
4. high-power LED encapsulation substrate according to claim 1, which is characterized in that the metallic matrix is integration
Metallic matrix, the first electrode and second electrode are located above thermal insulation layer.
5. high-power LED encapsulation substrate according to claim 1, which is characterized in that the metallic matrix includes mutual
Separately positioned the first metallic matrix and the second metallic matrix, thermal insulation layer include being located at the first metallic matrix and the second metal
The first thermal insulation layer above matrix and the second insulation between the first metallic matrix and the second metallic matrix in gap
Heat-conducting layer, the first electrode are located above the first metallic matrix and thermal insulation layer, and second electrode is located at the second metallic matrix
And above thermal insulation layer.
6. high-power LED encapsulation substrate according to claim 4 or 5, which is characterized in that the substrate includes Metal Substrate
Board bottom seat, the metallic matrix are closely pressed on above metal substrate pedestal.
7. a kind of high-power LED encapsulation structure, which is characterized in that the high-power LED encapsulation structure includes claim 1~6
Any one of described in substrate, be fixed on by crystal-bonding adhesive that LED chip above insulating layer, to be located at upper surface of base plate periphery exposed
The pad at place, the bracket being packaged on substrate, the epoxy lens being packaged in above substrate, the pad, LED chip are in epoxy
Lens interior, pad are electrically connected by lead and LED chip, and electrode pin is electrically connected through bracket and with the pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920447832.6U CN209571427U (en) | 2019-04-03 | 2019-04-03 | High-power LED encapsulation substrate and high-power LED encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920447832.6U CN209571427U (en) | 2019-04-03 | 2019-04-03 | High-power LED encapsulation substrate and high-power LED encapsulation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209571427U true CN209571427U (en) | 2019-11-01 |
Family
ID=68335964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920447832.6U Active CN209571427U (en) | 2019-04-03 | 2019-04-03 | High-power LED encapsulation substrate and high-power LED encapsulation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209571427U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110021695A (en) * | 2019-04-03 | 2019-07-16 | 苏州大学 | High-power LED encapsulation substrate and preparation method thereof, high-power LED encapsulation structure |
| CN115058746A (en) * | 2022-07-07 | 2022-09-16 | 中国人民解放军陆军装甲兵学院 | Metal coating, preparation method and application thereof |
-
2019
- 2019-04-03 CN CN201920447832.6U patent/CN209571427U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110021695A (en) * | 2019-04-03 | 2019-07-16 | 苏州大学 | High-power LED encapsulation substrate and preparation method thereof, high-power LED encapsulation structure |
| CN115058746A (en) * | 2022-07-07 | 2022-09-16 | 中国人民解放军陆军装甲兵学院 | Metal coating, preparation method and application thereof |
| CN115058746B (en) * | 2022-07-07 | 2024-04-12 | 中国人民解放军陆军装甲兵学院 | Metal coating, preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110021695A (en) | High-power LED encapsulation substrate and preparation method thereof, high-power LED encapsulation structure | |
| CN209571427U (en) | High-power LED encapsulation substrate and high-power LED encapsulation structure | |
| CN104681704B (en) | Flip LED chips and preparation method thereof | |
| CN101409324B (en) | Manufacturing method of bismuth-telluride-based thermoelectric electrification device | |
| KR20060125887A (en) | Buried-contact solar cells with self-doping contacts | |
| CN100499189C (en) | Process for preparaing reversing chip of pure-golden Au alloy bonding LED | |
| CN107275319A (en) | A kind of LED chip flat-plate heat pipe integrated encapsulation structure and preparation method thereof | |
| CN105489727B (en) | The bonding electrode structure and production method of flip LED chips | |
| CN105845817A (en) | Large-power inverted-structure ultraviolet LED curing light source and preparation method thereof | |
| TWI310956B (en) | Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof | |
| CN102208498A (en) | Method and device for packaging light-emitting diode (LED) high-heat-conduction insulated base | |
| CN103227276A (en) | Semiconductor luminescent device and manufacturing method thereof | |
| CN101847685B (en) | Heat-resistant stable bismuth telluride-based thermoelectric semiconductor generator and preparation method thereof | |
| CN201599745U (en) | LED lamp and substrate thereof | |
| CN106997873A (en) | A kind of encapsulating structure and method for packing | |
| CN111341741A (en) | Power device packaging structure and packaging method for improving heat dissipation capability | |
| CN101359707A (en) | LED and manufacturing method thereof | |
| CN201134424Y (en) | Fully pressure welded high-power IGBT multi-formwork ceramic cartridge | |
| CN103247742B (en) | A kind of LED heat radiation substrate and manufacture method thereof | |
| CN218333774U (en) | Insulating substrate structure of two DBC boards preparation | |
| CN102255236A (en) | Circuit packaging structure of high-power semiconductor laser and method for preparing circuit packaging structure | |
| CN110527964A (en) | A kind of diamond-like carbon composite film and its preparation method and application and a kind of IGBT module heat-radiating substrate | |
| CN207217502U (en) | A kind of high voltage bearing cermet package casing | |
| CN106787948A (en) | A kind of high temperature resistant Semiconductor Thermoelectric Generator and preparation method | |
| CN109618505A (en) | A kind of method of the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |