CN101409324B - Manufacturing method of bismuth-telluride-based thermoelectric electrification device - Google Patents
Manufacturing method of bismuth-telluride-based thermoelectric electrification device Download PDFInfo
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- CN101409324B CN101409324B CN 200810040956 CN200810040956A CN101409324B CN 101409324 B CN101409324 B CN 101409324B CN 200810040956 CN200810040956 CN 200810040956 CN 200810040956 A CN200810040956 A CN 200810040956A CN 101409324 B CN101409324 B CN 101409324B
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Abstract
The invention relates to a bismuth telluride-based thermoelectric generating device and a manufacturing method thereof. The bismuth telluride-based thermoelectric generating device is characterized by consisting of a perforated bracing frame, P/N-type elements, a barrier layer, a soldering tin layer, a low-temperature terminal electrode, a ceramic substrate, a sealant, a high-temperature terminalspraying electrode and the ceramic substrate; the pattern of the low-temperature terminal electrode corresponds to holes of the perforated bracing frame. The manufacturing method comprises the steps of preparing the perforated bracing frame, preparing the elements, mounting the elements, soldering the cold terminal electrode with tin, spaying a hot terminal electrode, grinding the sprayed surfaceand the like; the perforated bracing frame is put on the ceramic substrate covered by the low-temperature terminal electrode, the low-temperature terminal electrode is arranged in a hole of the bracing frame, the bismuth telluride-based P/N-type elements are put in the holes of the bracing frame, the soldering tin layers of the elements contact with a tin layer on the low-temperature terminal electrode, the elements are soldered on the low-temperature terminal electrode by heating; the high-temperature terminal of the device is sprayed with aluminum or aluminum alloy and taken as the high-temperature terminal electrode, and the P/N-type elements are connected in series. The device and the method overcome the problem that the existing tin soldering devices are restricted by operating environment and temperature, and the rejection rate and the manufacturing cost are far less than these of plasma spraying devices.
Description
Technical field
The present invention relates to a kind of manufacture method of thermoelectric device, particularly the manufacture method of a kind of sealed type, bismuth telluride-base low temperature Thermoelectric Generator belongs to technical field of thermoelectric conversion.
Background technology
Thermoelectric power generation is that a kind of semi-conducting material Seebeck effect that utilizes is realized the directly technology of conversion of heat energy and electric energy, has broad application prospects and potential social and economic benefits at aspects such as solar photoelectric one thermoelectric compound power-generating and the remaining used heat thermoelectric power generations of industry.
Thermoelectric Generator is the key of thermoelectric power generation technology, the main thermoelectric element of being made by P type, two kinds of semi-conducting materials of N-type forms, the voltage of single thermoelectric element is very low, usually need a large amount of P types, N-type thermoelectric element are connected and composed thermoelectric device by conduction series connection, heat conduction parallel way, to obtain higher voltage, easy to use.
Shown in Figure 1 is typical bismuth telluride-base low temperature thermoelectric unit spare, is comprised of P/N type element, electrode, ceramic substrate.Manufacturing step is: 1) the P/N type element of cutting design size; 2) electrode is prepared on ceramic substrate; 3) will be welded on the electrode by conduction series connection, heat conduction parallel connection with scolding tin P/N type element.There is following problem in this Thermoelectric Generator when practical application: 1) in wet environment, moisture is assembled in the space of device inside, and hot short circuit occurs device easily, and power output is reduced greatly; 2) in use, scolding tin comes off and lost efficacy under the device Yin Gaowen, and the serviceability temperature scope of device is subjected to the restriction of scolding tin fusing point, can not give full play to the potentiality of bismuth telluride-base material.
For the problems referred to above, United States Patent (USP) (US5875098) provides a kind of bismuth-telluride-based thermoelectric electrification device as shown in Figure 2, is comprised of P/N type element, molybdenum barrier layer, aluminium electrode, high temperature organic material porous grid basket, electric insulating film.United States Patent (USP) (US5856210) has been announced the manufacture method of this device, the steps include: 1) manufacturing high temperature organic material porous grid basket; 2) cutting P/N type element, and in the grid basket of packing into; 3) the plasma spraying metal molybdenum is as the barrier layer, and coating aluminum is as electrode; 4) grind until expose grid; 5) stick electric insulating film.Grid has been eliminated the gap between the element, and the fusing point of aluminium is far above the serviceability temperature of device, thereby overcomes well device and used by wet environment and the restriction of scolding tin fusing point.Yet, the manufacturing cost of this device is very high, cost far above the soldering device, because: 1) metal molybdenum barrier layer and aluminium electrode adopt plasma spraying, and the temperature of spraying is high, and heat is assembled at the grid basket, cause grid basket temperature to raise and be out of shape, increased later process---the workload that polishes, be out of shape serious meeting and cause device to be scrapped, reduce device yield; 2) plasma spraying equipment involves great expense, and operating cost is high, and spraying certain thickness electrode often needs to spray tens times, and cost is quite high.
The bismuth telluride-base power generating device serviceability temperature of soldering method preparation is restricted, and the device yield of plasma spraying preparation is low, and cost is very high, thereby its large-scale application is subject to expensive restriction.Therefore, in the urgent need to proposing a kind of method, the serviceability temperature of bismuth telluride-base power generating device can be improved, cost can be reduced again.
Summary of the invention
For above problem, the invention provides a kind of bismuth-telluride-based thermoelectric electrification device and manufacture method thereof that is different from existing structure, be subjected to the restriction of environment for use and temperature to overcome the soldering device, and the percent defective of its manufacturing and cost will be far below existing isoionic spraying devices.
Bismuth-telluride-based thermoelectric electrification device provided by the invention is comprised of porous bracing frame, P/N type bismuth telluride-base element, barrier layer, soldering-tin layer, low-temperature end electrode and ceramic substrate, fluid sealant and temperature end coating electrode and ceramic substrate.Its characteristics are: (1) low-temperature end electrode sintering is on ceramic substrate, and the figure of low-temperature end electrode matches with the hole of porous bracing frame, and when the porous bracing frame was placed on the ceramic substrate, the low-temperature end electrode all was arranged in the hole of the porous bracing frame that matches; (2) the porous bracing frame is located on the ceramic substrate, and low-temperature end electrode, P/N type element are arranged in the hole of bracing frame; (3) between low-temperature end electrode and P/N type element soldering-tin layer, barrier layer are arranged successively, soldering-tin layer combines P/N type element and low-temperature end electrode, and the barrier layer stops the scolding tin atom to the diffusion of bismuth telluride-base material, in order to avoid worsen the performance of bismuth telluride-base material; (4) fluid sealant is between porous bracing frame and ceramic substrate, with its gap sealing; (5) other end at P/N type element has barrier layer, temperature end coating electrode successively, and ceramic substrate.Consisted of like this bismuth-telluride-based thermoelectric electrification device of conduction series connection, heat conduction parallel connection.
The porous bracing frame eliminated the gap between the P/N type element, overcome the restriction that device is subjected to environment for use, and the temperature end electrode has overcome the restriction that device is subjected to serviceability temperature.The method preparation of plating or flame-spraying is adopted on the barrier layer, flame-spraying or electric arc spraying are adopted in the preparation of temperature end electrode, its cost is significantly less than plasma spraying, and in the device spraying process temperature distortion much smaller than plasma spraying, reduce workload and the percent defective of subsequent handling, also be conducive to the reduction of cost.
This bismuth-telluride-based thermoelectric electrification device manufacture method comprises: six steps such as the preparation of porous bracing frame, element preparation, the element of packing into, the soldering of cold junction electrode, the spraying of hot junction electrode and spray-coating surface grinding.
Below in conjunction with accompanying drawing manufacture method is elaborated:
1) porous bracing frame preparation.(trade name: PBB) as the material of porous bracing frame, material is heated to liquid state, injects the mould of preheating, keep pressure, be shaped, the water flowing cooling die takes out bracing frame to room temperature to select fire resistant resin.The porous bracing frame, the hole of porous bracing frame is straight hole, does not have the step of gradient and element location.The size of porous bracing frame is decided according to the requirement of device.Because the architectural feature of device of the present invention need to not arrange the element positioning step in the porous bracing frame, the forming die structure of porous bracing frame is simplified, reduce the mould manufacturing expense.
2) element preparation.Adopt the bismuth telluride-base material of distinguishing molten or sintering.With the section of bismuth telluride-base material, nickel plating forms the barrier layer in section, and tin on an end of nickel plating forms the soldering layer on the bismuth telluride-base element, and then cutting obtains given size P type element and N-type element.The present invention adopts electro-plating method to prepare the barrier layer, can direct spraying Al or Al alloy, because the fusing point of Al and alloy thereof is low, so the present invention adopts flame-spraying or electric arc spraying, compares with plasma spraying and can reduce significantly cost.Nickel layer thickness as the barrier layer is 5～50 μ m.
3) element of packing into.The low-temperature end electrode is 0.2～0.4mm copper sheet, and on aluminium oxide (perhaps aluminium nitride) ceramic substrate, scolding tin on the low-temperature end electrode forms the soldering-tin layer on the low-temperature end electrode with low-temperature end electrode sintering, and its thickness is no more than 150 microns.The porous bracing frame is placed on the ceramic substrate, and the low-temperature end electrode is arranged in the hole of porous bracing frame, pack into successively P type element and N-type element, and attention should make the soldering-tin layer of element contact with soldering-tin layer on the low-temperature end electrode.The other end at the porous bracing frame covers location-plate, clamps, and obtains the complete Module part of assembling.
4) cold junction electrode soldering.Module part assembling is complete and that clamp is put into welding equipment, is heated to 200 ℃ and realizes the cold junction electrode welding, obtains the Module part of cold junction welding.Cold junction electrode welding equipment is the incubator with conveyer belt, 1/10th of the too late plasma spraying equipment of cost, and also simple to operate, operating cost is low, and therefore, cold junction electrode welding expense is significantly less than the plasma spraying method of prior art.
5) hot junction (temperature end) electrode spraying.The Module part that the cold junction electrode welding is complete is installed on the anchor clamps of water-circulating cooling device, then with they together level be installed on the workbench of spraying equipment.During spraying, workbench is motionless, and shower nozzle moves.Adopt flame-spraying or electric arc spraying equipment, spray 200～800 microns aluminium or aluminium alloy, as the hot junction electrode.Make P/N type element form cascaded structure, between porous bracing frame and low-temperature end ceramic substrate, be coated with fluid sealant.Compared with prior art, the present invention has adopted water-circulating cooling device, has effectively reduced the gathering of heat on device, has avoided temperature to raise and has caused the device distortion, thereby reduced the device percent defective, has reduced cost.
6) spray-coating surface grinds.Spray-coating surface must grind, until expose porous bracing frame rib, spray module is installed in surface grinding machine for this reason and grinds, and in the process of lapping module height is controlled in the suitable scope.
Description of drawings
Fig. 1 prior art---the bismuth-telluride-based thermoelectric electrification device of soldering method preparation;
Fig. 2 a～c is prior art---the bismuth-telluride-based thermoelectric electrification device of door metal spray-coating method preparation, and wherein, a is the vertical view of device, and b is the 1-1 profile of device, and c is the 2-2 sectional view of device;
Fig. 3 a～c is the schematic diagram of porous bracing frame provided by the invention, and wherein, a is front view, and b is the B-B profile, and c is the C-C profile;
Fig. 4 is bismuth telluride-base element schematic diagram;
Fig. 5 a～d is bismuth-telluride-based thermoelectric electrification device assembling schematic diagram provided by the invention, and wherein, a is upward view, and b is sectional view, and c is that figure is cutd open in the part amplification among the b, and d is vertical view;
Fig. 6 a～b is bismuth-telluride-based thermoelectric electrification device hot-end coating schematic diagram provided by the invention, and wherein, a is sectional view, and b is vertical view;
Fig. 7 a～b is bismuth-telluride-based thermoelectric electrification device schematic diagram provided by the invention, and wherein, a is the device stereogram, and b is the sectional view of device;
Among the figure, 10 is the porous bracing frame, and 20 is P type element, 21 is the N-type element, and 22 is the barrier layer, and 23 is the soldering-tin layer on the element, 30 is ceramic substrate, 31 low-temperature end electrodes, the soldering-tin layer on the 32 low-temperature end electrodes, 33 location-plates, the soldering-tin layer after the welding of 34 low-temperature end, the device behind the 41 cold junction electrode weldings, before the spraying of hot junction electrode, water-circulating cooling device in 51 anchor clamps, 52 anchor clamps, 53 shower nozzles, 54 thermal spraying workbench, 55 temperature end electrodes, 56 fluid sealants.
Embodiment
Further illustrate substantive distinguishing features of the present invention and significant progressive below in conjunction with accompanying drawing.
This bismuth-telluride-based thermoelectric electrification device manufacture method comprises: six steps such as the preparation of porous bracing frame, element preparation, the element of packing into, the soldering of cold junction electrode, the spraying of hot junction electrode and spray-coating surface grinding.Now be elaborated as follows:
1) porous bracing frame preparation.(trade name: PBB) as the material of porous bracing frame 10, material is heated to liquid state, injects the mould of preheating, keep pressure, be shaped, the water flowing cooling die takes out bracing frame to room temperature to select fire resistant resin.Porous bracing frame 10 as shown in Figure 3, the hole of porous bracing frame is straight hole, does not have gradient and element positioning step.The size of porous bracing frame is decided according to the requirement of device.Because the architectural feature of device of the present invention need to not arrange the step that element is located in the porous bracing frame, the forming die structure of porous bracing frame is simplified, reduce the mould manufacturing expense.
2) element preparation.Adopt the bismuth telluride-base material of distinguishing molten or sintering.With the section of bismuth telluride-base material, nickel plating forms barrier layer 22 in section, and tin on an end of nickel plating sheet forms the soldering layer 23 on the bismuth telluride-base element, and then cutting obtains given size P type element 20, N-type element 21 (referring to Fig. 4).The present invention adopts electro-plating method to prepare the barrier layer, can direct spraying Al or Al alloy, because the fusing point of Al and alloy thereof is low, so the present invention adopts flame-spraying or electric arc spraying, compares with plasma spraying and can reduce significantly cost.
3) element of packing into.Low-temperature end electrode 31 is 0.2～0.4mm copper sheet, and on aluminium oxide (perhaps aluminium nitride) ceramic substrate 30, scolding tin on the low-temperature end electrode 31 forms the soldering-tin layer 32 on the low-temperature end electrode 31 with low-temperature end electrode 31 sintering, and its thickness is no more than 150 microns.Porous bracing frame 10 is placed on the ceramic substrate 30, and low-temperature end electrode 31 is arranged in the hole of porous bracing frame 10, the P type of packing into successively element 20 or N-type element 21, and attention should make the soldering-tin layer 23 of element contact with soldering-tin layer 32 on the low-temperature end electrode 31.The other end at porous bracing frame 10 covers location-plate 33, clamps, and obtains the complete Module part of assembling, referring to Fig. 5.
4) cold junction electrode soldering.Module part assembling is complete and that clamp is put into welding equipment, is heated to 200 ℃ and realizes the cold junction electrode welding, obtains the Module part 41 of cold junction welding.Cold junction electrode welding equipment is the incubator with conveyer belt, 1/10th of the too late plasma spraying equipment of cost, and also simple to operate, operating cost is low, and therefore, cold junction electrode welding expense is significantly less than the plasma spraying method of prior art.
5) hot junction (temperature end) electrode spraying.The Module part 41 that the cold junction electrode welding is complete is installed on the anchor clamps 52 of water-circulating cooling device 51, then with they together level be installed on the workbench 54 of spraying equipment.During spraying, workbench 54 is motionless, and shower nozzle 53 moves.Adopt flame-spraying or electric arc spraying equipment, spray 200～800 microns aluminium or aluminium alloy, as hot junction electrode 55.Make P/N type element form cascaded structure, between porous bracing frame and low-temperature end ceramic substrate, be coated with fluid sealant 56.Compared with prior art, the present invention has adopted water-circulating cooling device, has effectively reduced the gathering of heat on device, has avoided temperature to raise and has caused the device distortion, thereby reduced the device percent defective, has reduced cost.(Fig. 6)
6) spray-coating surface grinds.
Be made into the structural section figure of device as shown in Figure 7.
Bismuth-telluride-based thermoelectric electrification device provided by the invention is comprised of porous bracing frame, P/N type bismuth telluride-base element, barrier layer, soldering-tin layer, low-temperature end electrode and ceramic substrate, fluid sealant and temperature end electrode and ceramic substrate; Wherein,
(1) low-temperature end electrode 31 sintering are on ceramic substrate 30, and the hole of the figure of low-temperature end electrode 31 and porous bracing frame 10 is complementary;
(2) porous bracing frame 4 is between upper and lower two ceramic substrates, and low-temperature end electrode 31, P/ N type element 21 and 20 are arranged in the hole of porous bracing frame 10; The hole of porous bracing frame is straight hole;
(3) between low-temperature end electrode 31 and P/N type element soldering-tin layer 32 (not marking), barrier layer 22 are arranged successively, the soldering-tin layer 34 of low-temperature end welding combines P/N type element and low-temperature end electrode;
(4) fluid sealant 56 is between porous bracing frame 10 and ceramic substrate 30;
(5) other end at P/N type element has barrier layer 22, temperature end electrode 55 successively, and conduction is connected, the bismuth-telluride-based thermoelectric electrification device of heat conduction parallel connection thereby consisted of.
Claims (3)
1. the manufacture method of a bismuth-telluride-based thermoelectric electrification device, it is characterized in that comprising that the preparation of porous bracing frame, the preparation of P/N type bismuth telluride-base element, the P/N type of packing into bismuth telluride-base element, the soldering of low-temperature end electrode, the spraying of temperature end electrode and spray-coating surface grind six steps, specifically:
1) porous bracing frame preparation: select fire resistant resin as the material of porous bracing frame, material is heated to liquid state, inject the mould of preheating, keep pressure, be shaped, the water flowing cooling die takes out bracing frame to room temperature; The hole of porous bracing frame is straight hole, and the size of porous bracing frame is decided according to the requirement of device;
2) P/N type bismuth telluride-base element preparation: adopt the bismuth telluride-base material of distinguishing molten or sintering, cut into slices with the bismuth telluride-base material, electronickelling forms the barrier layer in section, tin on an end of nickel plating, form the soldering-tin layer on the P/N type bismuth telluride-base element, then cutting obtains given size P/N type bismuth telluride-base element;
3) the P/N type bismuth telluride-base element of packing into: the copper sheet sintering is formed the low-temperature end electrode at ceramic substrate, and this ceramic substrate is aluminium oxide or aluminium nitride, and on the low-temperature end electrode scolding tin, form the soldering-tin layer on the low-temperature end electrode; The porous bracing frame is placed on the ceramic substrate, the low-temperature end electrode is arranged in the hole of porous bracing frame, the P/N type of packing into successively bismuth telluride-base element, the soldering-tin layer of P/N type bismuth telluride-base element is contacted with soldering-tin layer on the low-temperature end electrode, the other end at the porous bracing frame covers location-plate, clamp, obtain the complete Module part of assembling;
4) low-temperature end electrode soldering: will assemble Module part complete and that clamp and put into welding equipment, and be heated to 200 ℃ and realize the low-temperature end electrode welding, and obtain the Module part of cold junction welding;
The Module part of the cold junction electrode welding that 5) temperature end electrode spraying: with step 4) makes adopts flame-spraying or electric arc spraying equipment, and spraying aluminium or aluminium alloy are as the temperature end electrode; Make P/N type bismuth telluride-base element form cascaded structure, between porous bracing frame and low-temperature end ceramic substrate, be coated with fluid sealant;
6) spray-coating surface grinding: with step 5) module of preparation is ground at grinder, with the height of control module.
2. by the manufacture method of bismuth-telluride-based thermoelectric electrification device claimed in claim 1, it is characterized in that the soldering of step 4) low-temperature end electrode is to carry out in the incubator of conveyer belt.
3. press the manufacture method of bismuth-telluride-based thermoelectric electrification device claimed in claim 1, it is characterized in that temperature end electrode spraying is that the Module part of low-temperature end electrode soldering is installed on the anchor clamps of circulating water cooling device, then level is installed on the workbench, workbench is motionless, and the method that the shower nozzle of flame-spraying or electric arc spraying moves is implemented.
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| CN101985396B (en) * | 2010-11-03 | 2013-03-20 | 刘述江 | Method for preparing aluminum nitride ceramic substrate by clinker slicing |
| CN102412366A (en) * | 2011-09-30 | 2012-04-11 | 中国科学院上海硅酸盐研究所 | Bismuth-telluride-based thermoelectric element and preparation method thereof |
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| EP3196951B1 (en) | 2016-01-21 | 2018-11-14 | Evonik Degussa GmbH | Rational method for the powder metallurgical production of thermoelectric components |
| CN107227475A (en) * | 2017-05-22 | 2017-10-03 | 广东省稀有金属研究所 | A kind of surface treatment method of bismuth telluride-base thermoelectric material chip |
| CN107464795B (en) * | 2017-06-30 | 2020-02-07 | 西安易朴通讯技术有限公司 | Thermoelectric conversion device and electronic apparatus |
| CN111129277B (en) * | 2019-12-27 | 2023-05-30 | 湖北赛格瑞新能源科技有限公司 | Bismuth telluride-based semiconductor thermoelectric device without substrate and preparation method thereof |
| CN111517292A (en) * | 2020-04-30 | 2020-08-11 | 西华大学 | Tin telluride-based thermoelectric material and preparation method thereof |
| CN114540767B (en) * | 2022-01-24 | 2024-01-23 | 河南农业大学 | Preparation method of flexible aluminum electrode film |
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