CN201408783Y - Bismuth telluride based thermoelectric generation device - Google Patents
Bismuth telluride based thermoelectric generation device Download PDFInfo
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- CN201408783Y CN201408783Y CN2008201547294U CN200820154729U CN201408783Y CN 201408783 Y CN201408783 Y CN 201408783Y CN 2008201547294 U CN2008201547294 U CN 2008201547294U CN 200820154729 U CN200820154729 U CN 200820154729U CN 201408783 Y CN201408783 Y CN 201408783Y
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Abstract
The utility model relates to a bismuth telluride based thermoelectric generation device which is characterized in that (1) a low temperature end electrode is sintered on ceramic substrates and has thepattern thereof matched with holes of a porous support frame; (2) the porous support frame is arranged between the upper and the lower ceramic substrates, and the low temperature end electrode and aP/N type element are arranged in the holes of the porous support frame; (3) a soldering layer and a blocking layer are sequentially arranged between the low temperature end electrode and the P/N typeelement, and the soldering layer combines the low temperature end electrode and a P/N type element together; (4) a seal gum is arranged between the porous support frame and the ceramic substrates; and(5) a blocking layer and a high temperature end electrode are sequentially arranged at the other end of the P/N type element, therefore, the bismuth telluride based thermoelectric generation device with electricity conducting in series connection and heat conducting in parallel connection is formed. The utility model overcomes the problem that the prior simple soldering device is limited by use environment and temperature.
Description
Technical field
The utility model relates to a kind of thermoelectric device, particularly relates to a kind of sealed type, bismuth telluride-base low temperature thermoelectric power generation device, belongs to technical field of thermoelectric conversion.
Background technology
Thermoelectric power generation is that a kind of semi-conducting material Seebeck effect that utilizes is realized the directly technology of conversion of heat energy and electric energy, at aspects such as solar photoelectric-thermoelectric compound power-generating and industrial surplus used heat thermoelectric power generations wide application prospect and potential society, economic benefit is arranged.
The thermoelectric power generation device is the key of thermoelectric power generation technology, mainly the thermoelectric element of being made by P type, two kinds of semi-conducting materials of N type is formed, the voltage of single thermoelectric element is very low, usually need a large amount of P types, N type thermoelectric element are connected and composed thermoelectric device by conduction series connection, heat conduction parallel way, to obtain higher voltage, easy to use.
Shown in Figure 1 is typical bismuth telluride-base low temperature thermoelectric unit spare, is made up of P/N type element, electrode, ceramic substrate.Manufacturing step is: 1) the P/N type element of cutting design size; 2) with electrode preparation on ceramic substrate; 3) will be welded on the electrode by conduction series connection, heat conduction parallel connection with scolding tin P/N type element.There is following problem in this thermoelectric power generation device when practical application: 1) in wet environment, moisture is assembled in the space of device inside, and hot short circuit takes place device easily, and power output is reduced greatly; 2) in use, scolding tin comes off and lost efficacy under the device Yin Gaowen, and the serviceability temperature scope of device is subjected to the restriction of scolding tin fusing point, can not give full play to the potentiality of bismuth telluride-base material.
At the problems referred to above, United States Patent (USP) (US5875098) provides a kind of bismuth-telluride-based thermoelectric electrification device as shown in Figure 2, is made up of P/N type element, molybdenum barrier layer, aluminium electrode, high temperature organic material porous grid basket, electric insulating film.United States Patent (USP) (US5856210) has been announced the manufacture method of this device, the steps include: 1) manufacturing high temperature organic material porous grid basket; 2) cutting P/N type element, and in the grid basket of packing into; 3) the plasma spraying metal molybdenum is as the barrier layer, and coating aluminum is as electrode; 4) grind up to exposing grid; 5) stick electric insulating film.Grid has been eliminated the gap between the element, and the fusing point of aluminium is far above the serviceability temperature of device, thereby overcomes device well and used by wet environment and the restriction of scolding tin fusing point.Yet, the manufacturing cost of this device is very high, far above the soldering device cost, because: 1) metal molybdenum barrier layer and aluminium electrode adopt plasma spraying, the temperature height of spraying, heat is assembled on the grid basket, cause grid basket temperature to raise and be out of shape, increased later process---the workload that polishes, be out of shape serious meeting and cause device to be scrapped, reduce device yield; 2) plasma spraying equipment involves great expense, and the operating cost height, and spraying certain thickness electrode often needs to spray tens times, and cost is quite high.
The bismuth telluride-base power generating device serviceability temperature of soldering method preparation is restricted, and the device yield of plasma spraying preparation is low, and cost is very high, thereby its large-scale application is subjected to expensive restriction.Therefore, press for and propose a kind of method, can improve the serviceability temperature of bismuth telluride-base power generating device, can reduce cost again.
Summary of the invention
At above problem, the utility model provides a kind of bismuth-telluride-based thermoelectric electrification device that is different from existing structure, overcoming the restriction that the soldering device is subjected to environment for use and temperature, and the percent defective of its manufacturing and cost will be far below existing isoionic spraying devices.
The bismuth-telluride-based thermoelectric electrification device that the utility model provides is made up of porous bracing frame, P/N type bismuth telluride-base element, barrier layer, soldering-tin layer, low-temperature end electrode and ceramic substrate, fluid sealant and temperature end electrode and ceramic substrate.Its characteristics are: (1) low-temperature end electrode sintering is on ceramic substrate, and the figure of low-temperature end electrode matches with the hole of porous bracing frame, and when the porous bracing frame was placed on the ceramic substrate, the low-temperature end electrode all was arranged in the hole of the porous bracing frame that matches; (2) the porous bracing frame is between upper and lower two ceramic substrates, and low-temperature end electrode, P/N type element are arranged in the hole of bracing frame; (3) between low-temperature end electrode and P/N type element soldering-tin layer, barrier layer are arranged successively, soldering-tin layer combines P/N type element and low-temperature end electrode, and the barrier layer stops the scolding tin atom to the bismuth telluride-base diffuse, in order to avoid worsen the performance of bismuth telluride-base material; (4) fluid sealant is between porous bracing frame and ceramic substrate, with its gap sealing; (5) other end at P/N type element has barrier layer, temperature end electrode successively, and ceramic substrate.Constituted the bismuth-telluride-based thermoelectric electrification device of conduction series connection, heat conduction parallel connection like this.
The porous bracing frame eliminated the gap between the P/N type element, overcome the restriction that device is subjected to environment for use, and the temperature end electrode has overcome the restriction that device is subjected to serviceability temperature.The method preparation of plating or flame-spraying is adopted on the barrier layer, flame-spraying or electric arc spraying are adopted in the preparation of temperature end electrode, its cost is significantly less than plasma spraying, and in the device spraying process temperature distortion much smaller than plasma spraying, reduce the workload and the percent defective of subsequent handling, also helped the reduction of cost.
The porous bracing frame is made by fire resistant resin, and the commodity of this resin are called PBB.
Ceramic substrate is aluminium oxide, the alumimium nitride ceramic sheet of high heat conductance, and its thickness is 0.2mm～0.5mm.
The low-temperature end electrode is a copper sheet, and its thickness is 0.2mm～0.4mm, and the method preparation of adopting sintering is on ceramic substrate.
P/N type element is that P/N type bismuth telluride base melts or the agglomerated material cutting forms.
The barrier layer is a nickel dam, and thickness is 5～50 μ m, adopts plating or flame spraying method to be coated on the P/N type element.
The temperature end electrode is aluminium or aluminium alloy, adopts the preparation of flame-spraying or arc spray process on the barrier layer, thickness 0.2mm～0.8mm.
Description of drawings
Fig. 1 is a prior art---the bismuth-telluride-based thermoelectric electrification device of soldering method preparation;
Fig. 2～Fig. 4 is a prior art---the bismuth-telluride-based thermoelectric electrification device of door metal spray-coating method preparation, and wherein, Fig. 2 is the vertical view of device, and Fig. 3 is the 1-1 profile of device, and Fig. 4 is the 2-2 sectional view of device;
Fig. 5～Fig. 6 is a bismuth-telluride-based thermoelectric electrification device schematic diagram provided by the invention, and wherein, Fig. 5 is the device stereogram, and Fig. 6 is the sectional view of device;
Wherein: 1 is ceramic substrate; 2 is the low-temperature end electrode; 3 soldering-tin layers; 4 barrier layers; 5 porous bracing frames; 6 temperature end electrodes, 7 fluid sealants.
Embodiment
Below further set forth characteristics of the present utility model and progress, but the utility model absolutely not only is confined to embodiment.
The bismuth-telluride-based thermoelectric electrification device that the utility model provides is made up of porous bracing frame 5, P/N type bismuth telluride-base element, barrier layer 4, soldering-tin layer 3, low-temperature end electrode 2 and ceramic substrate 1, fluid sealant 7 and temperature end electrode 6 and ceramic substrate; Low-temperature end electrode 2 sintering are on ceramic substrate 1 in described thermoelectric generator, and the figure of low-temperature end electrode 2 matches with the hole of porous bracing frame 5; Porous bracing frame 5 is between upper and lower two ceramic substrates 1, and low-temperature end electrode 2, P/N type element are arranged in the hole of porous bracing frame 5; Between low-temperature end electrode 2 and P/N type element soldering-tin layer 3, barrier layer 4 are arranged successively, soldering-tin layer combines P/N type element and low-temperature end electrode; Fluid sealant is between porous bracing frame 5 and ceramic substrate 1; The other end at P/N type element has barrier layer 4, temperature end electrode 6 successively, and conduction is connected, the bismuth-telluride-based thermoelectric electrification device of heat conduction parallel connection thereby constituted.
The ceramic substrate thickness of present embodiment is 0.3mm～0.4mm; The thickness of low-temperature end electrode is 0.3mm; The thickness on barrier layer is 2.5 μ m～30 μ m.The temperature end electrode is positioned on the barrier layer of P/N type element, and thickness is 0.5mm～0.8mm.
Claims (5)
1, a kind of bismuth-telluride-based thermoelectric electrification device is characterized in that described bismuth-telluride-based thermoelectric electrification device is made up of porous bracing frame, P/N type bismuth telluride-base element, barrier layer, soldering-tin layer, low-temperature end electrode and ceramic substrate, fluid sealant and temperature end coating electrode and ceramic substrate; Wherein,
(1) low-temperature end electrode sintering is on ceramic substrate, and the figure of low-temperature end electrode matches with the hole of porous bracing frame;
(2) the porous bracing frame is between upper and lower two ceramic substrates, and low-temperature end electrode, P/N type element are arranged in the hole of porous bracing frame;
(3) between low-temperature end electrode and P/N type element soldering-tin layer, barrier layer are arranged successively, soldering-tin layer combines P/N type element and low-temperature end electrode;
(4) fluid sealant is between porous bracing frame and ceramic substrate;
(5) other end at P/N type element has barrier layer, temperature end coating electrode successively, and conduction is connected, the bismuth-telluride-based thermoelectric electrification device of heat conduction parallel connection thereby constituted.
2, by the described bismuth-telluride-based thermoelectric electrification device of claim 1, it is characterized in that ceramic substrate thickness is 0.2mm～0.5mm.
3, by the described bismuth-telluride-based thermoelectric electrification device of claim 1, the thickness that it is characterized in that the low-temperature end electrode is 0.2mm～0.4mm.
4, by the described bismuth-telluride-based thermoelectric electrification device of claim 1, the thickness that it is characterized in that the barrier layer is 5～50 μ m.
5, by the described bismuth-telluride-based thermoelectric electrification device of claim 1, it is characterized in that the temperature end electrode is positioned on the barrier layer of P/N type element, thickness is 0.2mm～0.8mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008201547294U CN201408783Y (en) | 2008-10-31 | 2008-10-31 | Bismuth telluride based thermoelectric generation device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008201547294U CN201408783Y (en) | 2008-10-31 | 2008-10-31 | Bismuth telluride based thermoelectric generation device |
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| CN201408783Y true CN201408783Y (en) | 2010-02-17 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544346A (en) * | 2010-12-24 | 2012-07-04 | 中国电子科技集团公司第十八研究所 | Bismuth telluride thermoelectric generator |
| CN102569633A (en) * | 2010-12-24 | 2012-07-11 | 中国电子科技集团公司第十八研究所 | Preparation method for bismuth telluride temperature difference power generation device |
| CN103180984A (en) * | 2010-08-23 | 2013-06-26 | 排放技术有限公司 | Semiconductor element for thermoelectric module, and method for production thereof |
| CN103311262A (en) * | 2013-06-09 | 2013-09-18 | 中国华能集团清洁能源技术研究院有限公司 | Micro thermoelectric device, production method thereof and temperature difference generator with same |
| CN103515522A (en) * | 2012-06-28 | 2014-01-15 | Lg伊诺特有限公司 | Thermoelectric cooling module and manufacturing method thereof |
| CN104917272A (en) * | 2015-05-15 | 2015-09-16 | 合肥京东方光电科技有限公司 | Wearable electronic device |
| CN106098924A (en) * | 2016-08-23 | 2016-11-09 | 哈尔滨工业大学 | A kind of lamination film type thermo-electric device and spraying preparation method thereof |
| CN106159077A (en) * | 2015-03-30 | 2016-11-23 | 武汉理工大学 | A kind of bismuth telluride-based thermoelectric generating element and preparation method thereof |
| CN109950390A (en) * | 2019-03-04 | 2019-06-28 | 武汉利之达科技股份有限公司 | A kind of multistage thermoelectric cooler and preparation method thereof |
| CN111129277A (en) * | 2019-12-27 | 2020-05-08 | 湖北赛格瑞新能源科技有限公司 | Substrate-free bismuth telluride-based semiconductor thermoelectric device and preparation method thereof |
| CN112747498A (en) * | 2021-01-29 | 2021-05-04 | 江苏大学 | Personal thermal management method based on Peltier effect |
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2008
- 2008-10-31 CN CN2008201547294U patent/CN201408783Y/en not_active Expired - Lifetime
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103180984A (en) * | 2010-08-23 | 2013-06-26 | 排放技术有限公司 | Semiconductor element for thermoelectric module, and method for production thereof |
| CN103180984B (en) * | 2010-08-23 | 2017-03-08 | 排放技术有限公司 | Semiconductor element for electrothermal module and its manufacture method |
| CN102569633A (en) * | 2010-12-24 | 2012-07-11 | 中国电子科技集团公司第十八研究所 | Preparation method for bismuth telluride temperature difference power generation device |
| CN102569633B (en) * | 2010-12-24 | 2014-04-16 | 中国电子科技集团公司第十八研究所 | Preparation method for bismuth telluride temperature difference power generation device |
| CN102544346A (en) * | 2010-12-24 | 2012-07-04 | 中国电子科技集团公司第十八研究所 | Bismuth telluride thermoelectric generator |
| CN103515522A (en) * | 2012-06-28 | 2014-01-15 | Lg伊诺特有限公司 | Thermoelectric cooling module and manufacturing method thereof |
| CN103311262A (en) * | 2013-06-09 | 2013-09-18 | 中国华能集团清洁能源技术研究院有限公司 | Micro thermoelectric device, production method thereof and temperature difference generator with same |
| CN103311262B (en) * | 2013-06-09 | 2015-12-30 | 中国华能集团清洁能源技术研究院有限公司 | Micro thermoelectric device, manufacture method and comprise its thermal generator |
| CN106159077B (en) * | 2015-03-30 | 2020-01-14 | 武汉理工大学 | Bismuth telluride-based thermoelectric power generation element and preparation method thereof |
| CN106159077A (en) * | 2015-03-30 | 2016-11-23 | 武汉理工大学 | A kind of bismuth telluride-based thermoelectric generating element and preparation method thereof |
| CN104917272A (en) * | 2015-05-15 | 2015-09-16 | 合肥京东方光电科技有限公司 | Wearable electronic device |
| US10319894B2 (en) | 2015-05-15 | 2019-06-11 | Boe Technology Group Co., Ltd. | Wearable electronic device |
| CN106098924A (en) * | 2016-08-23 | 2016-11-09 | 哈尔滨工业大学 | A kind of lamination film type thermo-electric device and spraying preparation method thereof |
| CN109950390A (en) * | 2019-03-04 | 2019-06-28 | 武汉利之达科技股份有限公司 | A kind of multistage thermoelectric cooler and preparation method thereof |
| CN111129277A (en) * | 2019-12-27 | 2020-05-08 | 湖北赛格瑞新能源科技有限公司 | Substrate-free bismuth telluride-based semiconductor thermoelectric device and preparation method thereof |
| CN111129277B (en) * | 2019-12-27 | 2023-05-30 | 湖北赛格瑞新能源科技有限公司 | Bismuth telluride-based semiconductor thermoelectric device without substrate and preparation method thereof |
| CN112747498A (en) * | 2021-01-29 | 2021-05-04 | 江苏大学 | Personal thermal management method based on Peltier effect |
| CN112747498B (en) * | 2021-01-29 | 2022-04-26 | 江苏大学 | Personal thermal management method based on Peltier effect |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20100217 |