CN107464795B - Thermoelectric conversion device and electronic apparatus - Google Patents
Thermoelectric conversion device and electronic apparatus Download PDFInfo
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- CN107464795B CN107464795B CN201710522078.3A CN201710522078A CN107464795B CN 107464795 B CN107464795 B CN 107464795B CN 201710522078 A CN201710522078 A CN 201710522078A CN 107464795 B CN107464795 B CN 107464795B
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Abstract
The embodiment of the invention relates to the technical field of electronic products, and discloses a thermoelectric conversion device and electronic equipment. In the present invention, a thermoelectric conversion device includes: the device comprises a first heat dissipation film, a second heat dissipation film, a thermoelectric conversion film and an electric energy recovery module; the first heat dissipation film is arranged in a high-temperature area of the electronic equipment to conduct heat energy of the high-temperature area, and the second heat dissipation film is arranged in a low-temperature area of the electronic equipment; the two ends of the thermoelectric conversion film are respectively connected to the first heat dissipation film and the second heat dissipation film and are used for converting the heat energy of the high-temperature area into electric energy based on the temperature difference between the high-temperature area and the low-temperature area; the electric energy recovery module is connected to the second heat dissipation film and used for receiving and storing electric energy obtained through conversion through the second heat dissipation film. The embodiment of the invention also provides the electronic equipment; according to the embodiment of the invention, heat energy generated in equipment is converted into electric energy, so that heat dissipation is realized, meanwhile, effective utilization of the heat energy is realized, and energy is saved.
Description
Technical Field
The embodiment of the invention relates to the technical field of electronic products, in particular to a thermoelectric conversion device and electronic equipment.
Background
With the development of electronic devices such as mobile phones and tablet computers, the functions of the electronic devices are more and more powerful, and the systems are more and more complex, so that heat dissipation becomes one of the problems that people need to solve urgently. The existing electronic equipment mainly dissipates heat through the following measures: first, heat dissipation is performed in a form of reducing power consumption by optimizing a circuit design, for example, a load matching circuit of a power amplifier is optimized, and a load point where the power amplifier operates is pulled to a load shifting region where the power amplifier has higher efficiency, so as to reduce the operating current of the power amplifier, thereby reducing power consumption; second, heat is dissipated by attaching a thermally conductive material, such as graphite sheets, to the motherboard.
However, the inventors found that the following problems exist in the prior art: first, the circuit design is optimized to reduce the heat dissipation form of power consumption and only play a certain role in alleviating the heat source generation, but the problem of the main heat source generation is not fundamentally solved. Secondly, the heat conduction material is attached, which is equivalent to expanding a point heat source to a surface heat source and uniformly spreading the heat sources which are gathered together, and the method does not reduce the total amount of heat in the equipment and does not fundamentally dissipate the heat; moreover, in some superimposed application scenarios, such as playing games, accessing internet via wifi, and playing music out, the temperature on the device housing is very high, which affects the lifetime of the electronic device and makes the user experience poor.
Disclosure of Invention
An object of an embodiment of the present invention is to provide a thermoelectric conversion device and an electronic apparatus, which convert thermal energy generated in the apparatus into electric energy, realize heat dissipation, and simultaneously realize effective utilization of the thermal energy, and save energy.
To solve the above technical problem, an embodiment of the present invention provides a thermoelectric conversion device including: the device comprises a first heat dissipation film, a second heat dissipation film, a thermoelectric conversion film and an electric energy recovery module; the first heat dissipation film is arranged in a high-temperature area of the electronic equipment to conduct heat energy of the high-temperature area, and the second heat dissipation film is arranged in a low-temperature area of the electronic equipment; the two ends of the thermoelectric conversion film are respectively connected to the first heat dissipation film and the second heat dissipation film and are used for converting the heat energy of the high-temperature area into electric energy based on the temperature difference between the high-temperature area and the low-temperature area; the electric energy recovery module is connected to the second heat dissipation film and used for receiving, storing and converting the electric energy obtained through the second heat dissipation film.
Embodiments of the present invention also provide an electronic apparatus including at least one high temperature region, at least one low temperature region, and at least one thermoelectric conversion device described above; the first heat dissipation film is disposed on the high temperature region, the second heat dissipation film is disposed on the low temperature region, and the thermoelectric conversion film is disposed on a transition region between the high temperature region and the low temperature region.
Compared with the prior art, the thermoelectric conversion device comprises a first heat dissipation film, a second heat dissipation film, a thermoelectric conversion film and an electric energy recovery module; that is, in the thermoelectric conversion device provided in the embodiment of the present invention, two ends of the thermoelectric conversion film are respectively connected to the first heat dissipation film disposed in the high temperature region and the second heat dissipation film disposed in the low temperature region, and are used for converting the thermal energy of the high temperature region into the electrical energy. Meanwhile, the electric energy recovery module is connected to the second heat dissipation film, receives and stores electric energy obtained by heat energy conversion, and realizes effective utilization of heat energy, so that the utilization rate of energy is improved.
In addition, the electric energy recovery module comprises a charge extraction unit and a charge storage unit; the charge extraction unit is connected between the charge accumulation region of the second heat dissipation film and the charge storage unit; the charge extraction unit is used for extracting charges from the charge accumulation region of the second heat dissipation film so as to store the electric energy in the charge storage unit; wherein the thermoelectric conversion film temporarily stores the electric energy obtained by converting the thermal energy in the form of electric charge in the charge accumulation region. In this embodiment, a specific implementation manner of the electric energy recovery module is provided.
In addition, the thermoelectric conversion film is a semiconductor thermoelectric conversion film; the semiconductor thermoelectric conversion film comprises K semiconductor thermoelectric conversion subunits which are sequentially arranged; the charge extraction unit comprises K charge extraction subunits which are sequentially arranged; the charge accumulation region comprises K charge accumulation sub-regions arranged in sequence; k is a natural number greater than zero; one end of the ith semiconductor thermoelectric conversion subunit is connected to the first heat dissipation film, and the other end of the ith semiconductor thermoelectric conversion subunit is connected to the ith charge accumulation sub-region; one end of the ith charge extraction subunit is connected to the ith charge accumulation sub-region, and the other end of the ith charge extraction subunit is connected to the charge storage unit; the i is 1,2,3, … …, K. In this embodiment, the semiconductor thermoelectric conversion film includes K semiconductor thermoelectric conversion subunits arranged in sequence, and the charge extraction unit includes K charge extraction subunits arranged in sequence; a specific structural implementation of the thermoelectric conversion film and the charge extraction unit is provided.
In addition, each charge extraction subunit comprises a first diode, a second diode and a capacitor; the anode of the first diode is connected with a positive charge sub-region in the charge accumulation sub-region, and the cathode of the first diode is connected with the first end of the capacitor; the cathode of the second diode is connected with the negative charge subarea of the charge accumulation subarea, and the anode of the second diode is connected with the second end of the capacitor; the first end of the capacitor is also connected to the charge storage unit. In this embodiment, a specific structure of the charge extraction subunit is provided.
In addition, each charge extraction subunit further comprises a third diode and an operational amplifier; the anode of the third diode is connected to the first end of the capacitor, and the cathode of the third diode is connected to the inverting input end and the output end of the operational amplifier; the positive phase input end of the operational amplifier is grounded, and the output end of the operational amplifier is connected to the charge storage unit. In this embodiment, another specific structural form of the charge extraction subunit is provided in this embodiment.
Drawings
One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the figures in which like reference numerals refer to similar elements and which are not to scale unless otherwise specified.
Fig. 1 is a schematic view of a thermoelectric conversion device according to a first embodiment;
FIG. 2 is a schematic diagram of a temperature gradient field according to a first embodiment;
fig. 3 is a schematic view of a thermoelectric conversion device according to a second embodiment;
fig. 4 is a schematic view of a specific structure of a thermoelectric conversion device according to a second embodiment;
FIG. 5 is a schematic diagram of one structure of a charge extraction subcell according to a second embodiment;
FIG. 6 is a schematic diagram of another structure of a charge extraction subunit in accordance with the second embodiment;
FIG. 7 is a schematic diagram of still another structure of a charge extraction subcell according to a second embodiment;
fig. 8 is a schematic view of a thermoelectric conversion device according to a third embodiment;
FIG. 9 is a schematic diagram of a first implementation of a first connection region in accordance with a third embodiment;
FIG. 10 is a schematic diagram of a second implementation of a first connection region in accordance with a third embodiment;
FIG. 11 is a schematic diagram of a third implementation of a first connection region in accordance with a third implementation;
fig. 12 is a schematic view of a thermoelectric conversion device according to a fourth embodiment;
FIG. 13 is a schematic diagram of a first implementation of a second connection region in accordance with a fourth embodiment;
FIG. 14 is a schematic diagram of a second implementation of a second connection region in accordance with a fourth embodiment;
fig. 15 is a schematic view of a third implementation of the second connection region according to the fourth embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that numerous technical details are set forth in order to provide a better understanding of the present application in various embodiments of the present invention. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments.
A first embodiment of the present invention relates to a thermoelectric conversion device, as shown in fig. 1, including: the thermoelectric module comprises a first heat dissipation film 1, a second heat dissipation film 2, a thermoelectric conversion film 3 and an electric energy recovery module 4.
In this embodiment, the first heat dissipation film 1 is configured to be disposed in a high temperature region of the electronic device to conduct heat energy of the high temperature region, and the second heat dissipation film 2 is configured to be disposed in a low temperature region of the electronic device; the two ends of the thermoelectric conversion film 3 are respectively connected to the first heat dissipation film 1 and the second heat dissipation film 2, and are used for converting the heat energy of the high-temperature area into electric energy based on the temperature difference between the high-temperature area and the low-temperature area; the electric energy recovery module 4 is connected to the second heat dissipation film 2, and is configured to receive and store the converted electric energy through the second heat dissipation film 2.
Compared with the prior art, the thermoelectric conversion device comprises a first heat dissipation film, a second heat dissipation film, a thermoelectric conversion film and an electric energy recovery module; that is, in the thermoelectric conversion device provided in the embodiment of the present invention, two ends of the thermoelectric conversion film are respectively connected to the first heat dissipation film disposed in the high temperature region and the second heat dissipation film disposed in the low temperature region, and are used for converting the thermal energy of the high temperature region into the electrical energy, that is, the embodiment of the present invention converts the thermal energy generated in the device into the electrical energy, thereby greatly reducing the total heat in the device, achieving the purpose of heat dissipation, and replacing the heat dissipation manner of optimizing the circuit design or attaching the heat conductive material in the prior art. Meanwhile, the electric energy recovery module is connected to the second heat dissipation film, receives and stores electric energy obtained by heat energy conversion, realizes effective utilization of heat energy, improves the utilization rate of energy, and saves the energy.
In the present embodiment, the high temperature region and the low temperature region may be divided in advance. For example, simulation prediction of a modeling scheme is adopted for a certain heating module of the electronic device, at least one temperature gradient field composed of isotherms is presented on the heating module, each temperature gradient field corresponds to a high-temperature region, a heating central region of the temperature gradient field is taken as the high-temperature region, and a peripheral low-temperature region of the temperature field is taken as the low-temperature region. However, the present embodiment is not limited to this, and the dividing manner of the high temperature region and the low temperature region of a certain heat generating module is not limited at all, and for example, the high temperature region and the low temperature region may be directly divided by actual measurement.
In one example, as shown in FIG. 2, a temperature gradient field is used as an example, and includes a high temperature region H1Transition region H2And a low temperature region H3A first heat-dissipating film 1 is provided in a high-temperature region H1, and a transition region H2A thermoelectric conversion film 3 is arranged on the substrate, and a low temperature region H is formed3And arranging a second heat dissipation film 2 and an electric energy recovery module 4. However, this is merely an example and is not a practical limitation, for example, when the distance between the two temperature gradient fields is very close, the second heat dissipation film 2 and the thermoelectric conversion film 3 are structurally comparedWhen the temperature gradient field is difficult to realize, the two temperature gradient fields which are very close to each other can be combined into one temperature field, so that the heat dissipation of the whole heating module is optimized.
In this embodiment, the first heat dissipation film 1 is further configured to stabilize the temperature of the high temperature region within a certain period of time, and the second heat dissipation film 2 is further configured to stabilize the temperature of the low temperature region within a certain period of time, so that a relatively stable temperature gradient is formed between the high temperature region and the low temperature region, a stable temperature difference is achieved between two ends of the thermoelectric conversion film 3, and a relatively constant heat treatment space is provided for the thermoelectric conversion film 3 to achieve continuous excitation of thermoelectric conversion. In the present embodiment, the thermoelectric conversion film 3 is used to convert thermal energy of a high-temperature region into electric energy based on a temperature difference between the high-temperature region and a low-temperature region, and the greater the temperature difference between the high-temperature region and the low-temperature region (i.e., the greater the temperature gradient indicating the high-temperature region and the low-temperature region), the more electric charges the thermoelectric conversion film 3 converts.
In this embodiment, the electric energy recovery module 4 is configured to receive and store the converted electric energy through the second heat dissipation film 2. The electric energy recovery module 4 realizes that the heat energy generated in the high-temperature area can be continuously converted into electric energy and is conveyed to the electric energy recovery module 4 for storage through effective transfer and storage of the electric energy transmitted to the second heat dissipation film 2, so that the thermal performance of the whole module caused by heat accumulation is avoided from returning, the thermoelectric conversion efficiency of the thermoelectric conversion film 3 is higher, and the heat dissipation effect is improved.
A second embodiment of the present invention relates to a thermoelectric conversion device. The second embodiment is improved on the basis of the first embodiment, and the main improvement lies in that: in the second embodiment of the present invention, as shown in fig. 3, the electric energy recovery module 4 and the thermoelectric conversion film 3 are thinned.
In the present embodiment, the electric energy recovery module 4 includes a charge extraction unit 41 and a charge storage unit 42. The charge extraction unit 41 is connected between the charge accumulation region 21 of the second heat dissipation film 2 and the charge storage unit 42; the charge extracting unit 41 is for extracting charges from the charge accumulating region 21 of the second heat dissipation film 2 to store electric energy in the charge storing unit 42; in this case, the thermoelectric conversion film 3 temporarily stores electric energy obtained by converting thermal energy in the form of electric charges in the charge accumulation region 21.
In practice, the charge storage unit 42 includes a charge transport subunit and a charge subunit, one end of the charge transport subunit is connected to the charge accumulation region 21 of the second heat dissipation film 2, and the other end of the charge transport subunit is connected to the charge subunit; in this embodiment, the thermal energy is converted into the electric energy and transmitted to the charging subunit, so as to realize the self-charging function of the thermoelectric conversion device.
In the present embodiment, the thermoelectric conversion film 3 may be a semiconductor thermoelectric conversion film, and thermoelectric conversion is realized by the seebeck effect, but is not limited to this, and the type of the thermoelectric conversion film 3 is not limited in the present embodiment, and for example, the thermoelectric conversion film 3 may be a solid electrolyte ion thermoelectric conversion film, an alloy-based thermoelectric conversion film, a nanostructure hot spot conversion film, or the like.
In the present embodiment, the thermoelectric conversion film 3 includes K thermoelectric conversion subunits arranged in this order. As shown in fig. 4, the thermoelectric conversion film 3 is explained as an example of a semiconductor thermoelectric conversion film; the semiconductor thermoelectric conversion film includes K semiconductor thermoelectric conversion subunits 31 arranged in this order; the charge extraction unit 41 includes K charge extraction sub-units 411 arranged in sequence; the charge accumulation region 21 includes K charge accumulation sub regions arranged in sequence; k is a natural number greater than zero; one end of the ith semiconductor thermoelectric conversion subunit 31 is connected to the first heat dissipation film 1, and the other end is connected to the ith charge accumulation sub-region; the ith charge extracting sub-unit 411 has one end connected to the ith charge accumulating sub-region and the other end connected to the charge storing unit 42; i is 1,2,3, … …, K. In this embodiment, the charge extraction unit 41 includes K charge extraction subunits 411 in a matrix form, and only collects electric energy, so that heat is not generated, and heat dissipation is facilitated.
Specifically, in the present embodiment, each semiconductor thermoelectric conversion subunit 31 includes a P-type region and an N-type region, the P-type region being excited by a temperature difference between the high temperature region and the low temperature region, and thermal motion "phonons" in the P-type region driving carriers "holes" to move from the high temperature region to a positive charge sub-region of a charge accumulation sub-region of the low temperature region; under the excitation of the temperature difference between the high temperature region and the low temperature region, the thermal motion phonon in the N type region drives the carrier electron to move from the high temperature region to the negative charge subregion of the charge accumulation subregion of the low temperature region, so that the accumulation of positive charge holes and negative charge electrons is formed in the charge accumulation subregion.
In this embodiment, as shown in fig. 5, each charge extraction subunit 411 includes a first diode D1A second diode D2And a capacitor C1(ii) a First diode D1Is connected to the positive charge sub-region in the charge accumulation sub-region, and has its cathode connected to the capacitor C1A first end of (a); second diode D2Is connected to the negative charge sub-region of the charge accumulation sub-region, and has its anode connected to the capacitor C1A second end of (a); capacitor C1Is further connected to a charge storage unit 42, a capacitor C1The second terminal of (a) is grounded. Wherein E in the figure represents the equivalent circuit of the charge accumulating sub-region. In the present embodiment, the first diode D1And a second diode D2Under the traction of the directional current loop, the electric charge converted from the thermoelectricity is directionally and real-timely transferred to a capacitor C1And then to the charge storage unit 42. In the present embodiment, a specific implementation manner of the charge extraction subunit 411 is provided, but in practice, the present embodiment is not limited thereto, and the structural form of the charge extraction subunit 411 is not limited in any way in the present embodiment.
Preferably, in this embodiment, on the basis of fig. 5, as shown in fig. 6, each charge extraction subunit 411 further includes a third diode D3And operational amplifier a1(ii) a Third diode D3Is connected to the capacitor C1A first terminal of (D), a third diode D3Is connected to the operational amplifier A1The inverting input terminal and the output terminal; operational amplifier A1The non-inverting input terminal of (A) is grounded, and an operational amplifier A1Is connected to the charge storage unit 42. In this embodiment, an operational amplifier A1Forming a voltage follower on the third diodeD3Under the traction of (2), the capacitor C is connected1The stored charge is transferred in real time to the charge storing cell 42. In this embodiment, in another specific implementation manner of the charge extraction subunit 411, a third diode D3 and an operational amplifier a are added1The isolation between the charge storage unit 43 and the thermoelectric conversion film 3 is increased, and the charge can be transmitted in real time without being interfered by a source end. However, the present embodiment is not limited thereto, and the structural form of the charge extracting subunit 411 is not limited thereto.
In one example, as shown in FIG. 7, where E represents the equivalent circuit of the charge accumulation sub-region, each charge extraction sub-unit 411 includes a fourth diode D4A fifth diode D5A sixth diode D6The seventh diode D7An eighth diode D8Capacitor C2Capacitor C3An inductor L, a first triode M1A second triode M2And a third triode M3And a fourth triode M4A first resistor R1A second resistor R2And an operational amplifier A2. Specifically, the fourth diode D4Is connected to the positive charge sub-region in the charge accumulation sub-region, and a fourth diode D4Is connected to the capacitor C2A first end of (a); fifth diode D5Is connected to the negative charge sub-region of the charge accumulation sub-region and is simultaneously grounded, and a fifth diode D5Is connected to the capacitor C2The second end of (a). A first triode M1Is connected to the fourth diode D4And the second triode M2Collector electrode of the first triode M1Is connected to the fifth diode D5Positive electrode and capacitor C2A first triode M1Is connected to the first resistor R1First terminal and second triode M2The base of (1). Second triode M2Is connected to the third triode M3Emitter of, the second triode M2Is connected to the sixth diode D6The positive electrode of (1). Third triode M3Is connected to the base electrodeA second resistor R2First terminal and fourth triode M4Collector electrode of the third triode M3The collector of the second triode is connected with the fourth triode4Base and seventh diode D7The positive electrode of (1). The fourth triode M4Is connected to the fifth diode D5Negative electrode of (1), fourth triode M4Is connected to the sixth diode D6Positive electrode and capacitor C2Second terminal of (1), fourth triode M4Is connected to the second resistor R2The first end of (a). A first resistor R1Second terminal and second resistor R2Are connected to the first terminal of the inductor L and are commonly connected to an eighth diode D8Positive electrode of (2), capacitor C3Is connected to an eighth diode D8Negative electrode of (1), capacitor C3Is connected to the second terminal of the inductor L, which is further connected to a seventh diode D7Negative electrode of (1), sixth diode D6Negative electrode of (1) and operational amplifier A2The inverting input terminal of (1). Operational amplifier A2The non-inverting input terminal of (A) is grounded, and an operational amplifier A2Is connected to the operational amplifier A2And charge storage unit 42. In this embodiment, the first triode M1And a fourth triode M4A fourth diode D4A fifth diode D5Capacitor C2Are commonly used for transferring electric charges converted from heat to a capacitor C2In (1). Sixth diode D6For storing in a capacitor C2According to the charge along the fourth diode D4To a sixth diode D6Is transmitted to the operational amplifier A2Is input (operational amplifier a)2Actually constituting a voltage follower), a seventh diode D7For storing in a capacitor C2According to the charge along the fifth diode D5To a seventh diode D7Is transmitted to the operational amplifier A2The inverting input terminal of (1). A first resistor R1A second resistor R for voltage division2The biasing effect is achieved; eighth diode D8Inductor L and capacitor C3Are commonly used for transferring charges occurring in unbalance to the operational amplifier A2The inverting input terminal of (1); thus, the present embodiment realizes the charge transfer from the thermoelectric conversion to the charge storage unit 42, and in the present embodiment, another specific implementation manner of the charge extraction subunit 411 is provided, but in practice, the present embodiment is not limited thereto, and the structural form of the charge extraction subunit 411 is not limited in any way.
In this embodiment, the first diode D1To eighth diode D8Can be a zero-turn-on diode (the diode is conducted only when the positive-phase bias voltage is larger than 0 volt) formed by a metal-semiconductor process; however, the present embodiment is not limited thereto, and the type of the diode is not limited thereto, and the present embodiment can be applied as long as the function of the diode in the charge extracting subunit 411 can be realized.
Compared with the first embodiment, the embodiment of the invention is that the electric energy recovery module comprises a charge extraction unit and a charge storage unit; namely, an implementation of the electric energy recovery module is provided. The thermoelectric conversion film comprises K thermoelectric conversion subunits which are sequentially arranged, the charge extraction unit comprises K charge extraction subunits which are sequentially arranged, and each charge extraction subunit is connected with the charge storage unit; the charge extraction subunit transmits the extracted charges to the charge storage unit in parallel, so that the electric energy converted from the heat energy is stored, heat cannot be generated in the transmission process of the charges, and heat dissipation is facilitated.
A third embodiment of the present invention relates to a thermoelectric conversion device. The third embodiment is a refinement of the first embodiment, and the main refinement is as follows: in the third embodiment of the present invention, as shown in fig. 8, three implementations of the first connection region 11 for connection with the thermoelectric conversion film 3 on the first heat dissipation film 1 are provided.
In the present embodiment, the first connection region 11 is an effective thermal contact area. As shown in fig. 9, a first implementation of the first connection region 11: the first connection region 11 includes at least a second side wall of the first heat dissipation film 2 facing the thermoelectric conversion film 3. In this embodiment, the first implementation manner of the first connection region 11 is simple, and the thermal contact area between the first heat dissipation film 1 and the thermoelectric conversion film 3 is small, so that the first connection region is suitable for a region with a low temperature; however, the implementation of the first connection region 11 is not limited to this, and the implementation can be set according to the heat dissipation requirement.
In the present embodiment, as shown in fig. 10, a second implementation of the first connection region 11: the first connection region 11 includes a partial region on the second side wall of the first heat dissipation film 2 facing the thermoelectric conversion film 3 on one surface adjacent to the first side wall. In this embodiment, a second implementation manner of the first connection region 11 is to add a thermal contact surface on the basis of the first implementation manner, and is suitable for a region with a higher temperature; however, the implementation of the first connection region 11 is not limited to this, and the implementation can be set according to the heat dissipation requirement.
In the present embodiment, as shown in fig. 11, a third implementation of the first connection region 11: the first connection region 11 further comprises: the first heat dissipation film 2 faces a first side wall of the thermoelectric conversion film 3, a partial region on one surface adjacent to the first side wall, and a partial region on the other surface adjacent to the first side wall. In this embodiment, the third implementation manner of the first connection region 11 is based on the second implementation manner, and adds a thermal contact surface, which is suitable for a region with a high temperature; however, the implementation of the first connection region 11 is not limited to this, and the implementation can be set according to the heat dissipation requirement.
In fact, the embodiment of the present invention may be a refinement scheme based on the second embodiment.
Embodiments of the present invention provide three specific implementations of the first connection region for connection with the thermoelectric conversion film on the first heat dissipation film, relative to the first embodiment.
A fourth embodiment of the present invention relates to a thermoelectric conversion device. The fourth embodiment is a refinement of the first embodiment, and the main refinement is as follows: in the fourth embodiment of the present invention, as shown in fig. 12, three implementations of the second connection region 21 for connection with the thermoelectric conversion film 3 on the second heat dissipation film 2 are provided.
In the present embodiment, as shown in fig. 13, a first implementation of the second connection region 21: the second connection region 21 includes at least a second side wall of the second heat dissipation film 2 facing the thermoelectric conversion film 3. In this embodiment, the first implementation manner of the second connection region 21 is simple, and the thermal contact area between the second heat dissipation film 2 and the thermoelectric conversion film 3 is small, so that the second heat dissipation film is suitable for a region with a low temperature; however, the implementation manner of the second connecting region 21 is not limited in this embodiment, and can be set according to the heat dissipation requirement.
In the present embodiment, as shown in fig. 14, a second implementation of the second connection region 21: the second connection region 21 includes a partial region on a second side wall of the second heat dissipation film 2 facing the thermoelectric conversion film 3 on one surface adjacent to the second side wall. In this embodiment, the second implementation manner of the first connection region 21 is based on the first implementation manner, and a thermal contact surface is added, so that the second implementation manner is suitable for a region with a higher temperature; however, the implementation manner of the second connecting region 21 is not limited in this embodiment, and can be set according to the heat dissipation requirement.
In the present embodiment, as shown in fig. 15, a third implementation of the second connection region 21: the second connection region 21 includes a second side wall of the second heat dissipation film 2 facing the thermoelectric conversion film 3, a partial region on one surface adjacent to the second side wall, and a partial region on the other surface adjacent to the second side wall. In this embodiment, a third implementation manner of the second connection region 21 is to add a thermal contact surface on the basis of the second implementation manner, and is suitable for a region with a high temperature; however, the implementation manner of the second connecting region 21 is not limited in this embodiment, and can be set according to the heat dissipation requirement.
In the present embodiment, any implementation of the first connection region 11 can be matched to any implementation of the second connection region 21. For example, the first connection region 11 is a second implementation: the second connection region 11 includes a second side wall of the second heat dissipation film 2 facing the thermoelectric conversion film 3, and a partial region on one surface adjacent to the second side wall. While the second connection region may be a third implementation: the second connection region 21 includes a second side wall of the second heat dissipation film 2 facing the thermoelectric conversion film 3, a partial region on one surface adjacent to the second side wall, and a partial region on the other surface adjacent to the second side wall. However, this is only an example, and the specific implementation of the first connection region 11 and the second connection region 21 in the thermoelectric conversion device can be set according to actual requirements.
In this embodiment, the process of forming the thermoelectric conversion device may be: firstly, selecting a high-temperature area and a low-temperature area of a starting heat module; secondly, setting specific implementation modes of the first connection area 11 and the second connection area 21 according to heat dissipation requirements; and finally, arranging a first heat dissipation film 1 on a high-temperature area, arranging a second heat dissipation film 2 and an electric energy recovery module 4 on a low-temperature area, and arranging a thermoelectric conversion film 3 between the high-temperature area and the low-temperature area.
In fact, the embodiment of the present invention may be a refinement scheme based on the second or third embodiment.
Embodiments of the present invention provide three implementations of the second connection region for connecting with the thermoelectric conversion film on the second heat dissipation film, relative to the first implementation.
A fifth embodiment of the present invention relates to an electronic apparatus, such as a cellular phone, including at least one high temperature region, at least one low temperature region, and at least one thermoelectric conversion device according to any one of the first to fourth embodiments.
In the present embodiment, the first heat dissipation film is provided on the high temperature region, the second heat dissipation film is provided on the low temperature region, and the thermoelectric conversion film is provided on the transition region between the high temperature region and the low temperature region.
Compared with the prior art, the electronic equipment comprises the thermoelectric conversion device provided by the invention, so that the heat energy generated by the electronic equipment is converted into the electric energy to be stored, the total heat in the equipment is greatly reduced, the purpose of heat dissipation of the electronic equipment is realized, the electric energy is stored in the equipment, the effective utilization of the heat energy is realized, the energy is saved, and the utilization rate of the energy is improved.
In this embodiment, the electronic device includes at least one heat generating element on a circuit board; the high temperature region is located on the circuit board and at least comprises the position of the heating element. In this embodiment, when the electronic device is a mobile phone, the heating element is, for example, a processor, a power amplifier, or a power management chip, but the embodiment does not limit the specific type of the heating element.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples for carrying out the invention, and that various changes in form and details may be made therein without departing from the spirit and scope of the invention in practice.
Claims (10)
1. A thermoelectric conversion device, comprising: the device comprises a first heat dissipation film, a second heat dissipation film, a thermoelectric conversion film and an electric energy recovery module;
the first heat dissipation film is arranged in a high-temperature area of the electronic equipment to conduct heat energy of the high-temperature area, and the second heat dissipation film is arranged in a low-temperature area of the electronic equipment; the first heat dissipation film is also used for stabilizing the temperature of a high-temperature area within a certain time period, and the second heat dissipation film is also used for stabilizing the temperature of a low-temperature area within a certain time period;
the two ends of the thermoelectric conversion film are respectively connected to the first heat dissipation film and the second heat dissipation film and are used for converting the heat energy of the high-temperature area into electric energy based on the temperature difference between the high-temperature area and the low-temperature area;
the electric energy recovery module is connected to the second heat dissipation film and used for receiving and storing the converted electric energy through the second heat dissipation film;
the electric energy recovery module comprises a charge extraction unit and a charge storage unit;
the charge extraction unit is connected between the charge accumulation region of the second heat dissipation film and the charge storage unit;
the charge extraction unit is used for extracting charges from the charge accumulation region of the second heat dissipation film so as to store the electric energy in the charge storage unit;
wherein the thermoelectric conversion film temporarily stores the electric energy obtained by converting the thermal energy in the form of electric charge in the charge accumulation region;
the thermoelectric conversion film is a semiconductor thermoelectric conversion film;
the semiconductor thermoelectric conversion film comprises K semiconductor thermoelectric conversion subunits which are sequentially arranged; each semiconductor thermoelectric conversion subunit comprises a P-type region and an N-type region; the charge extraction unit comprises K charge extraction subunits which are sequentially arranged; the charge accumulation region comprises K charge accumulation sub-regions arranged in sequence; k is a natural number greater than zero;
one end of the ith semiconductor thermoelectric conversion subunit is connected to the first heat dissipation film, and the other end of the ith semiconductor thermoelectric conversion subunit is connected to the ith charge accumulation sub-region;
one end of the ith charge extraction subunit is connected to the ith charge accumulation sub-region, and the other end of the ith charge extraction subunit is connected to the charge storage unit; 1,2,3, … …, K;
each charge extraction subunit comprises a first diode, a second diode and a capacitor;
the anode of the first diode is connected with a positive charge sub-region in the charge accumulation sub-region, and the cathode of the first diode is connected with the first end of the capacitor;
the cathode of the second diode is connected with the negative charge subarea of the charge accumulation subarea, and the anode of the second diode is connected with the second end of the capacitor;
the first end of the capacitor is also connected to the charge storage unit.
2. The thermoelectric conversion device according to claim 1, wherein each of the charge extraction sub-units further comprises a third diode and an operational amplifier;
the anode of the third diode is connected to the first end of the capacitor, and the cathode of the third diode is connected to the inverting input end and the output end of the operational amplifier;
the positive phase input end of the operational amplifier is grounded, and the output end of the operational amplifier is connected to the charge storage unit.
3. The thermoelectric conversion device according to claim 1, wherein the first connection region on the first heat dissipation film for connection with the thermoelectric conversion film includes at least a first side wall of the first heat dissipation film facing the thermoelectric conversion film.
4. The thermoelectric conversion device according to claim 3, wherein the first connection region further comprises: a partial region on one surface adjacent to the first sidewall.
5. The thermoelectric conversion device according to claim 4, wherein the first connection region further comprises: a partial region on the other surface adjacent to the first sidewall.
6. The thermoelectric conversion device according to claim 1, wherein the second connection region on the second heat dissipation film for connection with the thermoelectric conversion film includes at least a second side wall of the second heat dissipation film facing the thermoelectric conversion film.
7. The thermoelectric conversion device according to claim 6, wherein the second connection region further comprises: a partial region on one surface adjacent to the second sidewall.
8. The thermoelectric conversion device according to claim 7, wherein the second connection region further comprises: a partial region on the other surface adjacent to the second sidewall.
9. An electronic device comprising at least one high temperature region, at least one low temperature region, and at least one thermoelectric conversion device according to any one of claims 1 to 8;
the first heat dissipation film is disposed on the high temperature region, the second heat dissipation film is disposed on the low temperature region, and the thermoelectric conversion film is disposed on a transition region between the high temperature region and the low temperature region.
10. The electronic device of claim 9, comprising at least one heat-generating element on a circuit board of the electronic device;
the high-temperature area is located on the circuit board and at least comprises the position of the heating element.
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| CN111356346B (en) * | 2020-04-14 | 2022-04-26 | 京东方科技集团股份有限公司 | Heat dissipation structure and display device |
| CN112333978B (en) * | 2020-10-19 | 2023-06-06 | Oppo广东移动通信有限公司 | Heat dissipation assembly, electronic equipment and heat dissipation control method |
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