CN104717871A - Terminal cooling system and cooling method - Google Patents
Terminal cooling system and cooling method Download PDFInfo
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- CN104717871A CN104717871A CN201310684252.6A CN201310684252A CN104717871A CN 104717871 A CN104717871 A CN 104717871A CN 201310684252 A CN201310684252 A CN 201310684252A CN 104717871 A CN104717871 A CN 104717871A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Computer Hardware Design (AREA)
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
The invention discloses a terminal cooling system and a cooling method. The terminal cooling system comprises a thermoelectric conversion circuit and a refrigeration circuit; the thermoelectric conversion circuit comprises a first return circuit composed of power-generation thermoelectric material and a capacitance, the different positions of the power-generation thermoelectric material are fixed to a heat source and a cold source of the terminal respectively, the power-generation thermoelectric material is used for generating current when the different positions of the power-generation thermoelectric material possess temperature difference, and the capacitance is used for storing the current generated by the power-generation thermoelectric material; the refrigeration circuit comprises a second return circuit composed of refrigeration thermoelectric material and a capacitance, the refrigeration thermoelectric material is fixed to the heat source of the terminal, the capacitance is used for discharging for the refrigeration thermoelectric material through the second return circuit, and the refrigeration thermoelectric material absorbs heat released from the heat source when the current passes through. By means of the technical scheme, the active refrigeration of the terminal cooling system can be realized.
Description
Technical field
The present invention relates to field of mobile communication, particularly relate to a kind of heat dissipation of terminal system and method.
Background technology
Along with smart mobile phone configuration is constantly increased, the heat radiation of mobile phone more and more causes the concern of Ge great cell phone manufacturer, and cell-phone heating seriously also allows user grow with each passing day to the complaint that height joins smart mobile phone.Smart mobile phone develops to ultrathin, handset structure space is very restricted, is difficult to enough heat-dissipating spaces.Smart mobile phone, towards the development of screen enlarging, high configuration, makes the power consumption of mobile phone itself, caloric value increasing.Large-screen, high configuration will inevitably consume more electric energy, and when battery technology does not also have breakthrough development, the electric energy active refrigeration of consuming cells is also difficult to be applied in the cooling system of mobile phone.
Having there is the temperature difference owing to being subject to certain factor effect in the node be made up of two kinds of different materials, just likely between two nodes, produces electromotive force, generation current in loop, thermoelectric effect that Here it is.
Thermoelectric effect, according to concrete action principle and the form of expression, has Seebeck effect (SeebeckEffect), paltie effect (Peltier Effect), Thomson effect (Thomson Effect) three kinds.Main application the first two effect at present, Seebeck effect is applied in above semiconductor temperature differential generating technology, and paltie effect is applied in conductor refrigeration.
Seebeck effect is in the closed-loop path that two kinds of different electric conducting materials are formed, and when two contact temperatures are different, the electromotive force produced in loop makes thermal energy be a kind of phenomenon of electric energy.In the loop that two kinds of metal A and B form, if make the temperature of two contact points different, then will there is electric current in the loop, be called thermocurrent.The essence of Seebeck effect can produce contact potential difference when being two kinds of Metal Contact, and this electrical potential difference depends on that the electronics of metal overflows merit and these two Fundamentals of effective electron density.The thermoelectromotive force of semiconductor is comparatively large, can be used as thermoelectric generator.
Peltier effect is thermoelectric cooling and the pyrogenicity phenomenon of French scientist Peltier discovery in 1834.To be partnered thermocouple by N, P-type material, after thermocouple passes into direct current, the direction passed into because of direct current is different, will produce heat absorption and release phenomenon, claim this phenomenon to be Peltier effect at galvanic couple node place.If electric current flows to conductor 2 by conductor 1, then within the unit interval, joint absorption/liberated heat is directly proportional to the current density by joint.
Along with universal, the expansion of battery capacity, the use of large high-definition screen of current phone software and hardware configuration constantly upgrading, Wifi, the caloric value of the heat radiation rich anies influential family such as CPU, radio frequency, battery, screen is made sharply to increase, current not effective especially mobile phone cooling system, helps mobile phone quick heat radiating.
Summary of the invention
In view of above-mentioned, mobile phone is dispelled the heat the problem that can not effectively solve, propose the present invention to provide a kind of heat dissipation of terminal system and method.
The invention provides a kind of heat dissipation of terminal system, comprise: thermoelectricity change-over circuit, comprise the first loop be made up of power generating thermoelectric material and electric capacity, the different parts of power generating thermoelectric material is individually fixed in pyrotoxin in terminal and low-temperature receiver, thermoelectric material is used for the generation current in the first loop when its different parts has the temperature difference, the electric current that electric capacity produces for storing thermoelectric material; Refrigeration circuit, comprise the second servo loop be made up of refrigeration thermoelectric material and electric capacity, refrigeration thermoelectric material is fixed on pyrotoxin in terminal, and electric capacity is used for by second servo loop to the electric discharge of refrigeration thermoelectric material, refrigeration thermoelectric material electric current by time absorb the heat of pyrotoxin release.
Preferably, heat dissipation of terminal system also comprises: bidirectional switch, is connected to thermoelectricity change-over circuit and refrigeration circuit, for after it reaches predetermined temperature, disconnect thermoelectricity change-over circuit, closed refrigeration circuit, after it is lower than predetermined temperature, closed thermoelectricity change-over circuit, disconnects refrigeration circuit, or, after described capacitor charging completes, disconnect described thermoelectricity change-over circuit, closed described refrigeration circuit, after described electric capacity discharges electricity, closed described thermoelectricity change-over circuit, disconnects described refrigeration circuit.
Preferably, thermoelectricity change-over circuit comprises further: current-limiting resistance, with Capacitance parallel connection, for the size of current of control flow check through electric capacity.
Preferably, power generating thermoelectric material comprises: N type semiconductor thermoelectric material; Refrigeration thermoelectric material comprises: the PN junction thermoelectric material be made up of P type semiconductor thermoelectric material and N type semiconductor thermoelectric material, and PN junction thermoelectric material is when by electric current, and this electric current flows to P type semiconductor thermoelectric material by N type semiconductor thermoelectric material.
Preferably, the pyrotoxin in terminal comprises: the central processing unit of terminal, radio frequency, battery and/or screen; Low-temperature receiver in terminal comprises: the structural member that can touch exterior of terminal environment.
Present invention also offers a kind of heat dissipation of terminal method, based on above-mentioned heat dissipation of terminal system, comprise: the power generating thermoelectric material in thermoelectricity change-over circuit is generation current when its different parts has the temperature difference, wherein, the different parts of power generating thermoelectric material is individually fixed in pyrotoxin in terminal and low-temperature receiver; Electric current stores by the electric capacity in thermoelectricity change-over circuit, and discharges to the refrigeration thermoelectric material in refrigeration circuit; Refrigeration thermoelectric material in refrigeration circuit electric current by time absorb heat, wherein, refrigeration thermoelectric material is fixed on pyrotoxin in terminal.
Preferably, said method comprises further: after the bidirectional switch being connected to thermoelectricity change-over circuit and refrigeration circuit reaches predetermined temperature, disconnects thermoelectricity change-over circuit, closed refrigeration circuit, after bidirectional switch is lower than predetermined temperature, closed thermoelectricity change-over circuit, disconnect refrigeration circuit, or, after described capacitor charging completes, disconnect described thermoelectricity change-over circuit, closed described refrigeration circuit, after described electric capacity discharges electricity, closed described thermoelectricity change-over circuit, disconnects described refrigeration circuit.
Preferably, said method comprises further: by with the current-limiting resistance control flow check of the Capacitance parallel connection size of current through electric capacity.
Preferably, above-mentioned power generating thermoelectric material comprises: N type semiconductor thermoelectric material; Refrigeration thermoelectric material comprises: the PN junction thermoelectric material be made up of P type semiconductor thermoelectric material and N type semiconductor thermoelectric material, and PN junction thermoelectric material is when by electric current, and this electric current flows to P type semiconductor thermoelectric material by N type semiconductor thermoelectric material.
Preferably, the pyrotoxin in above-mentioned terminal comprises: the central processing unit of terminal, radio frequency, battery and/or screen; Low-temperature receiver in terminal comprises: the structural member that can touch exterior of terminal environment.
Beneficial effect of the present invention is as follows:
Pass through thermoelectric effect, first the heat that mobile phone produces is converted to electrical power storage, can discharge after electric capacity is full of electricity, direct current is by absorbing heat after refrigeration circuit, realize the object of active refrigeration, solve the problem that in prior art, mobile phone heat dissipation capacity causes greatly, the mode that can be utilized by energy recovery, achieves the active refrigeration of mobile phone cooling system.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to technological means of the present invention can be better understood, and can be implemented according to the content of specification, and can become apparent, below especially exemplified by the specific embodiment of the present invention to allow above and other objects of the present invention, feature and advantage.
Accompanying drawing explanation
By reading hereafter detailed description of the preferred embodiment, various other advantage and benefit will become cheer and bright for those of ordinary skill in the art.Accompanying drawing only for illustrating the object of preferred implementation, and does not think limitation of the present invention.And in whole accompanying drawing, represent identical parts by identical reference symbol.In the accompanying drawings:
Fig. 1 is the structural representation of the heat dissipation of terminal system of the embodiment of the present invention;
Fig. 2 is the model schematic of the heat dissipation of terminal system based on thermoelectric effect semiconductor of the embodiment of the present invention;
Fig. 3 is the circuit diagram of the performance of changing thermal energy into electric energy module of the embodiment of the present invention;
Fig. 4 is the circuit diagram of the semiconductor active refrigeration circuit module of the embodiment of the present invention;
Fig. 5 is the enforcement schematic diagram of the heat dissipation of terminal system of the embodiment of the present invention;
Fig. 6 is the flow chart of the heat dissipation of terminal method of the embodiment of the present invention.
Embodiment
Below with reference to accompanying drawings exemplary embodiment of the present disclosure is described in more detail.Although show exemplary embodiment of the present disclosure in accompanying drawing, however should be appreciated that can realize the disclosure in a variety of manners and not should limit by the embodiment set forth here.On the contrary, provide these embodiments to be in order to more thoroughly the disclosure can be understood, and complete for the scope of the present disclosure can be conveyed to those skilled in the art.
In order to solve prior art, mobile phone being dispelled the heat the problem that can not effectively solve, the invention provides a kind of heat dissipation of terminal system and method, below in conjunction with accompanying drawing and embodiment, the present invention being further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, do not limit the present invention.
System embodiment
According to embodiments of the invention, provide a kind of heat dissipation of terminal system, Fig. 1 is the structural representation of the heat dissipation of terminal system of the embodiment of the present invention, and as shown in Figure 1, the heat dissipation of terminal system according to the embodiment of the present invention comprises: thermoelectricity change-over circuit 10 and refrigeration circuit 12.Below the modules of the embodiment of the present invention is described in detail.
Thermoelectricity change-over circuit 10, comprise the first loop be made up of power generating thermoelectric material and electric capacity, the different parts of power generating thermoelectric material is individually fixed in pyrotoxin in terminal and low-temperature receiver, thermoelectric material is used for the generation current in the first loop when its different parts has the temperature difference, the electric current that electric capacity produces for storing thermoelectric material; Wherein, thermoelectricity change-over circuit 10 comprises further: current-limiting resistance, with Capacitance parallel connection, for the size of current of control flow check through electric capacity.
Refrigeration circuit 12, comprise the second servo loop be made up of refrigeration thermoelectric material and electric capacity, refrigeration thermoelectric material is fixed on pyrotoxin in terminal, and electric capacity is used for by second servo loop to the electric discharge of refrigeration thermoelectric material, refrigeration thermoelectric material electric current by time absorb the heat of pyrotoxin release.
Preferably, heat dissipation of terminal system also comprises: bidirectional switch, be connected to thermoelectricity change-over circuit 10 and refrigeration circuit 12, for after it reaches predetermined temperature, disconnect thermoelectricity change-over circuit 10, closed refrigeration circuit 12, after it is lower than predetermined temperature, closed thermoelectricity change-over circuit 10, disconnect refrigeration circuit 12, or, after described capacitor charging completes, disconnect described thermoelectricity change-over circuit 10, closed described refrigeration circuit 12, after described electric capacity discharges electricity, closed described thermoelectricity change-over circuit 10, disconnects described refrigeration circuit 12.
Wherein, power generating thermoelectric material comprises: N type semiconductor thermoelectric material; Refrigeration thermoelectric material comprises: the PN junction thermoelectric material be made up of P type semiconductor thermoelectric material and N type semiconductor thermoelectric material, and PN junction thermoelectric material is when by electric current, and this electric current flows to P type semiconductor thermoelectric material by N type semiconductor thermoelectric material.Pyrotoxin in terminal comprises: the central processing unit of terminal, radio frequency, battery and/or screen; Low-temperature receiver in terminal comprises: the structural member that can touch exterior of terminal environment.
Below in conjunction with accompanying drawing, the technique scheme of the embodiment of the present invention is described in detail.
As shown in Figure 2 based in thermoelectric effect semiconductor mobile phone cooling system, comprising:
1, the heat that the pyrotoxins such as mobile phone CPU, radio frequency, battery, screen send is converted to the performance of changing thermal energy into electric energy module (above-mentioned thermoelectricity change-over circuit 10) of electric energy.
Particularly, thermoelectric material has such character, if the temperature of its different parts is different, electronics will go to the other end along the temperature difference from one end, and consequent electric current can as power supply.The direction of the thermoelectromotive force of P type semiconductor points to temperature end (Seebeck coefficient is negative) from low-temperature end, and on the contrary, the direction of the thermoelectromotive force of N type semiconductor is that temperature end points to low-temperature end (Seebeck coefficient is just).As shown in Figure 3, one end of thermoelectric material is fixed on the pyrotoxins such as CPU, radio-frequency module, battery, the screen back side, one end is fixed on the structural member edge that can contact outer handset environment to the implementing circuit figure of performance of changing thermal energy into electric energy module in addition.And form loop to connect.Access electric capacity more in the loop, the electrical power storage converted to by heat.
2, use heat to be converted to electric energy that electric energy stores carries out the semiconductor active refrigeration circuit module (above-mentioned refrigeration circuit 12) of active refrigeration.
When the loop be made up of by thermoelectric material electric current, return and produce heat absorption, exothermic phenomenon.When electric current flows to P type semiconductor by N type semiconductor, thermoelectric material absorbs heat.The implementing circuit figure of semiconductor active refrigeration circuit module as shown in Figure 4, discharges after electric capacity full charge, and pass to direct current from N end to P end to the thermoelectric material of refrigeration, thermoelectric material can absorb heat.Thermoelectric material layout is at pyrotoxins such as CPU, radio-frequency module, battery, screens.
The described one of the embodiment of the present invention based on thermoelectric effect semiconductor mobile phone cooling system workflow as shown in Figure 5, comprises the following steps:
The first step: use thermoelectric material composition loop, one end of thermoelectric material is fixed on the pyrotoxins such as CPU, radio-frequency module, battery, screen, and other one is fixed on the edge of phone structural near external environment condition.
Second step: access condenser network in the loop.
3rd step: when after the pyrotoxin evolution of heat, meeting generation current in the loop, electric current stores after flowing into electric capacity.
4th step: judge whether the electricity of electric capacity is full of, if the judgment is Yes, performs the 5th step, otherwise, perform the 3rd step;
5th step: after the electricity of electric capacity is full of, by Temperature jump switch, disconnects the connection of electric capacity and performance of changing thermal energy into electric energy circuit, and electric capacity access semiconductor refrigerating circuit discharges.
6th step: the PN junction of P type and N type semiconductor material composition is together in series, and forms loop.
7th step: the semiconductor circuit layout be together in series by PN junction is at pyrotoxins such as CPU, radio-frequency module, battery, the screen back sides.
8th step: the N end positive pole of electric capacity being connected to semiconductor circuit, is connected to the P end of semiconductor circuit by the negative pole of electric capacity.
9th step: after electric capacity is full of electricity, starts electric discharge, in the process of electric discharge, because direct current flows to P end from N end, can absorb heat, realize active refrigeration.
Tenth step: judge whether the electricity of electric capacity discharges, if the judgment is Yes, then performs the 11 step, otherwise, perform the 9th step.
11 step: condenser network is accessed performance of changing thermal energy into electric energy circuit by saltus step temperature switch.
In sum, by means of the technical scheme of the embodiment of the present invention, pass through thermoelectric effect, first the heat that mobile phone produces is converted to electrical power storage, can discharge after electric capacity is full of electricity, direct current is by absorbing heat after refrigeration circuit, realize the object of active refrigeration, solve the problem that in prior art, mobile phone heat dissipation capacity causes greatly, the mode that can be utilized by energy recovery, achieves the active refrigeration of heat dissipation of terminal system.
Embodiment of the method
According to embodiments of the invention, provide a kind of heat dissipation of terminal method, for above-mentioned heat dissipation of terminal system, Fig. 6 is the flow chart of the heat dissipation of terminal method of the embodiment of the present invention, and as shown in Figure 6, the heat dissipation of terminal method according to the embodiment of the present invention comprises following process:
Step 601, the power generating thermoelectric material in thermoelectricity change-over circuit is generation current when its different parts has the temperature difference, and wherein, the different parts of power generating thermoelectric material is individually fixed in pyrotoxin in terminal and low-temperature receiver;
Step 602, electric current stores by the electric capacity in thermoelectricity change-over circuit, and discharges to the refrigeration thermoelectric material in refrigeration circuit;
Step 603, the refrigeration thermoelectric material in refrigeration circuit electric current by time absorb heat, wherein, refrigeration thermoelectric material is fixed on pyrotoxin in terminal.
Preferably, said method comprises further: after the bidirectional switch being connected to thermoelectricity change-over circuit and refrigeration circuit reaches predetermined temperature, disconnects thermoelectricity change-over circuit, closed refrigeration circuit, after bidirectional switch is lower than predetermined temperature, closed thermoelectricity change-over circuit, disconnect refrigeration circuit, or, after capacitor charging completes, disconnect thermoelectricity change-over circuit, closed refrigeration circuit, after electric capacity discharges electricity, closed thermoelectricity change-over circuit, disconnects refrigeration circuit.
, can also by with the current-limiting resistance control flow check of the Capacitance parallel connection size of current through electric capacity.
Wherein, above-mentioned power generating thermoelectric material comprises: N type semiconductor thermoelectric material; Refrigeration thermoelectric material comprises: the PN junction thermoelectric material be made up of P type semiconductor thermoelectric material and N type semiconductor thermoelectric material, and PN junction thermoelectric material is when by electric current, and this electric current flows to P type semiconductor thermoelectric material by N type semiconductor thermoelectric material.Pyrotoxin in terminal comprises: the central processing unit of terminal, radio frequency, battery and/or screen; Low-temperature receiver in terminal comprises: the structural member that can touch exterior of terminal environment.
Below the technique scheme of the embodiment of the present invention is described in detail.
The first step, first the embodiment of the present invention selects thermal power transfer to be the thermoelectric material of electric energy, thermoelectric material must possess conversion efficiency of thermoelectric high, change the features such as sensitive, volume is little.The present embodiment, for semiconductor, selects N type semiconductor thermoelectric material, and allow thermoelectric material form loop, the electric current of N type semiconductor can from heat source stream to low-temperature receiver.The one end in loop is fixed on the pyrotoxins such as CPU, radio-frequency module, battery, the screen back side, the other one end in loop is fixed on the low-temperature receiver end of structural member near external environment condition edge.
Second step: access resistance and condenser network in N type semiconductor loop, resistance and Capacitance parallel connection, the electrical power storage being used for heat to change is in electric capacity.The electric capacity selected in the embodiment of the present invention is super capacitor.
3rd step: when after the pyrotoxin evolution of heat, due to Seebeck effect, meeting generation current in the loop, in N type semiconductor thermoelectric material, electric current can flow to low-temperature receiver from pyrotoxin, and after electric current flows through condenser network, electric charge can store in electric capacity.
4th step: after the electricity of electric capacity is full of, by saltus step switch, disconnects the connection of electric capacity and performance of changing thermal energy into electric energy circuit, and electric capacity access semiconductor refrigerating circuit discharges.
5th step: start to build semiconductor refrigerating circuit, first selects P type and the N type semiconductor of paltie effect sensitivity.The PN junction of P type and N type semiconductor material composition is together in series, and forms loop.
6th step: the semiconductor circuit layout be together in series by PN junction is at pyrotoxins such as CPU, radio-frequency module, battery, the screen back sides.When refrigeration circuit freezes time, can by the heat extraction of pyrotoxin.
7th step: the N end positive switch of super capacitor being connected to semiconductor circuit, is connected to the P end of semiconductor circuit by the negative switch of electric capacity.
8th step: after electric capacity is full of electricity, electric capacity is opened from performance of changing thermal energy into electric energy Circuit Interrupt by saltus step switch, access semiconductor refrigerating circuit.Start electric discharge after electric capacity access semiconductor refrigerating circuit, in the process of electric discharge, direct current flows to P end from N end, and due to paltie effect effect, PN festival-gathering is absorbed heat, and realizes active refrigeration.
Terminal is in the process of heating, and can repeat the first step to the 8th step, realizing thermal power transfer is electric energy, then realizes active refrigeration by electric energy.
In sum, by means of the technical scheme of the embodiment of the present invention, pass through thermoelectric effect, first the heat that mobile phone produces is converted to electrical power storage, can discharge after electric capacity is full of electricity, direct current is by absorbing heat after refrigeration circuit, realize the object of active refrigeration, solve the problem that in prior art, mobile phone heat dissipation capacity causes greatly, the mode that can be utilized by energy recovery, achieves the active refrigeration of heat dissipation of terminal system.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a heat dissipation of terminal system, is characterized in that, comprising:
Thermoelectricity change-over circuit, comprise the first loop be made up of power generating thermoelectric material and electric capacity, the different parts of described power generating thermoelectric material is individually fixed in pyrotoxin in terminal and low-temperature receiver, described thermoelectric material be used for when its different parts has the temperature difference in described first loop generation current, described electric capacity for store described thermoelectric material produce electric current;
Refrigeration circuit, comprise the second servo loop be made up of refrigeration thermoelectric material and described electric capacity, described refrigeration thermoelectric material is fixed on the pyrotoxin in described terminal, described electric capacity be used for discharge to described refrigeration thermoelectric material by described second servo loop, described refrigeration thermoelectric material electric current by time absorb described pyrotoxin discharge heat.
2. heat dissipation of terminal system as claimed in claim 1, it is characterized in that, described heat dissipation of terminal system also comprises: bidirectional switch, be connected to described thermoelectricity change-over circuit and described refrigeration circuit, for after it reaches predetermined temperature, disconnect described thermoelectricity change-over circuit, closed described refrigeration circuit, after it is lower than described predetermined temperature, closed described thermoelectricity change-over circuit, disconnect described refrigeration circuit, or, after described capacitor charging completes, disconnect described thermoelectricity change-over circuit, closed described refrigeration circuit, after described electric capacity discharges electricity, closed described thermoelectricity change-over circuit, disconnect described refrigeration circuit.
3. heat dissipation of terminal system as claimed in claim 1, it is characterized in that, described thermoelectricity change-over circuit comprises further: current-limiting resistance, with described Capacitance parallel connection, for the size of current of control flow check through described electric capacity.
4. heat dissipation of terminal system as claimed in claim 1, it is characterized in that, described power generating thermoelectric material comprises: N type semiconductor thermoelectric material; Described refrigeration thermoelectric material comprises: the PN junction thermoelectric material be made up of P type semiconductor thermoelectric material and N type semiconductor thermoelectric material, and described PN junction thermoelectric material is when by electric current, and this electric current flows to P type semiconductor thermoelectric material by N type semiconductor thermoelectric material.
5. heat dissipation of terminal system as claimed in claim 1, it is characterized in that, the pyrotoxin in described terminal comprises: the central processing unit of terminal, radio frequency, battery and/or screen; Low-temperature receiver in described terminal comprises: the structural member that can touch exterior of terminal environment.
6. a heat dissipation of terminal method, based on the heat dissipation of terminal system according to any one of claim 1 to 5, it is characterized in that, described method comprises:
Power generating thermoelectric material in thermoelectricity change-over circuit is generation current when its different parts has the temperature difference, and wherein, the different parts of described power generating thermoelectric material is individually fixed in pyrotoxin in terminal and low-temperature receiver;
Described electric current stores by the electric capacity in described thermoelectricity change-over circuit, and discharges to the refrigeration thermoelectric material in refrigeration circuit;
Described refrigeration thermoelectric material in described refrigeration circuit electric current by time absorb heat, wherein, described refrigeration thermoelectric material is fixed on the pyrotoxin in described terminal.
7. method as claimed in claim 6, it is characterized in that, described method comprises further:
After the bidirectional switch being connected to described thermoelectricity change-over circuit and described refrigeration circuit reaches predetermined temperature, disconnect described thermoelectricity change-over circuit, closed described refrigeration circuit, after described bidirectional switch is lower than described predetermined temperature, closed described thermoelectricity change-over circuit, disconnects described refrigeration circuit, or, after described capacitor charging completes, disconnect described thermoelectricity change-over circuit, closed described refrigeration circuit, after described electric capacity discharges electricity, closed described thermoelectricity change-over circuit, disconnects described refrigeration circuit.
8. method as claimed in claim 6, it is characterized in that, described method comprises further:
By with the current-limiting resistance control flow check of the described Capacitance parallel connection size of current through described electric capacity.
9. method as claimed in claim 6, it is characterized in that, described power generating thermoelectric material comprises: N type semiconductor thermoelectric material; Described refrigeration thermoelectric material comprises: the PN junction thermoelectric material be made up of P type semiconductor thermoelectric material and N type semiconductor thermoelectric material, and described PN junction thermoelectric material is when by electric current, and this electric current flows to P type semiconductor thermoelectric material by N type semiconductor thermoelectric material.
10. method as claimed in claim 6, it is characterized in that, the pyrotoxin in described terminal comprises: the central processing unit of terminal, radio frequency, battery and/or screen; Low-temperature receiver in described terminal comprises: the structural member that can touch exterior of terminal environment.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310684252.6A CN104717871A (en) | 2013-12-13 | 2013-12-13 | Terminal cooling system and cooling method |
| PCT/CN2014/077717 WO2014180368A1 (en) | 2013-12-13 | 2014-05-16 | Terminal heat-dissipation system and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310684252.6A CN104717871A (en) | 2013-12-13 | 2013-12-13 | Terminal cooling system and cooling method |
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| CN104717871A true CN104717871A (en) | 2015-06-17 |
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| WO (1) | WO2014180368A1 (en) |
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| CN107807513A (en) * | 2017-11-20 | 2018-03-16 | 依波精品（深圳）有限公司 | Can spontaneous charging intelligent watch |
| CN110736266A (en) * | 2019-09-23 | 2020-01-31 | 三一重机有限公司 | Air conditioning system and excavator |
| CN112255905A (en) * | 2020-10-22 | 2021-01-22 | 维沃移动通信有限公司 | Wearable device, control method and device and electronic device |
| CN112333978A (en) * | 2020-10-19 | 2021-02-05 | Oppo广东移动通信有限公司 | Heat dissipation assembly, electronic equipment and heat dissipation control method |
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| CN106992351B (en) * | 2015-12-14 | 2021-11-16 | 福特全球技术公司 | Vehicle antenna assembly with cooling |
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| CN110736266A (en) * | 2019-09-23 | 2020-01-31 | 三一重机有限公司 | Air conditioning system and excavator |
| CN112333978A (en) * | 2020-10-19 | 2021-02-05 | Oppo广东移动通信有限公司 | Heat dissipation assembly, electronic equipment and heat dissipation control method |
| CN112255905A (en) * | 2020-10-22 | 2021-01-22 | 维沃移动通信有限公司 | Wearable device, control method and device and electronic device |
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| WO2014180368A1 (en) | 2014-11-13 |
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