CN209266350U - 处理腔室 - Google Patents

处理腔室 Download PDF

Info

Publication number
CN209266350U
CN209266350U CN201820642742.8U CN201820642742U CN209266350U CN 209266350 U CN209266350 U CN 209266350U CN 201820642742 U CN201820642742 U CN 201820642742U CN 209266350 U CN209266350 U CN 209266350U
Authority
CN
China
Prior art keywords
processing chamber
chamber housing
semi
shaped elements
circle shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201820642742.8U
Other languages
English (en)
Chinese (zh)
Inventor
王海涛
A·侯塞因
K·拉马斯瓦米
J·A·肯尼
J·路德维格
张纯磊
W·李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of CN209266350U publication Critical patent/CN209266350U/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201820642742.8U 2017-05-02 2018-05-02 处理腔室 Expired - Fee Related CN209266350U (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762500120P 2017-05-02 2017-05-02
US62/500,120 2017-05-02

Publications (1)

Publication Number Publication Date
CN209266350U true CN209266350U (zh) 2019-08-16

Family

ID=64015476

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201820642742.8U Expired - Fee Related CN209266350U (zh) 2017-05-02 2018-05-02 处理腔室
CN201810410921.3A Pending CN108807125A (zh) 2017-05-02 2018-05-02 处理腔室和递归分配连接器

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201810410921.3A Pending CN108807125A (zh) 2017-05-02 2018-05-02 处理腔室和递归分配连接器

Country Status (5)

Country Link
US (1) US20180323042A1 (enExample)
JP (1) JP2018190978A (enExample)
KR (1) KR20180122295A (enExample)
CN (2) CN209266350U (enExample)
TW (1) TW201907439A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
WO2016060712A1 (en) 2014-10-17 2016-04-21 Applied Materials, Inc. Cmp pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
JP6960390B2 (ja) * 2018-12-14 2021-11-05 東京エレクトロン株式会社 給電構造及びプラズマ処理装置
WO2020146034A1 (en) * 2019-01-08 2020-07-16 Applied Materials, Inc. Recursive coils for inductively coupled plasmas
CN114743854B (zh) 2019-05-14 2025-02-25 玛特森技术公司 末端执行器和用于处理工件的系统
KR102848754B1 (ko) * 2019-07-29 2025-08-20 어플라이드 머티어리얼스, 인코포레이티드 개선된 고온 척킹을 갖는 반도체 기판 지지부들
JP2021103641A (ja) * 2019-12-25 2021-07-15 東京エレクトロン株式会社 プラズマ発生源の検査方法及び負荷
JP7454961B2 (ja) * 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
JP7344821B2 (ja) * 2020-03-17 2023-09-14 東京エレクトロン株式会社 プラズマ処理装置
CN112331607B (zh) * 2020-10-28 2024-03-26 北京北方华创微电子装备有限公司 静电卡盘及半导体工艺设备
JP7544450B2 (ja) * 2021-03-17 2024-09-03 東京エレクトロン株式会社 プラズマ処理装置
JP7557429B2 (ja) * 2021-05-27 2024-09-27 東京エレクトロン株式会社 プラズマ処理装置
KR102932754B1 (ko) * 2021-12-24 2026-03-04 삼성전자주식회사 에지 링 어셈블리를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법
WO2025164456A1 (ja) * 2024-02-02 2025-08-07 東京エレクトロン株式会社 プラズマ処理装置
US12463075B2 (en) * 2024-02-23 2025-11-04 Applied Materials, Inc. Cathode assembly for integration of embedded electrostatic chuck (ESC)
US20250299929A1 (en) * 2024-03-25 2025-09-25 Applied Materials, Inc. Substrate support assembly having an edge voltage delivery system

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US5633073A (en) * 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
KR100796830B1 (ko) * 2000-04-12 2008-01-22 아익스트론 아게 기판코팅방법 수행용 반응실
US7311784B2 (en) * 2002-11-26 2007-12-25 Tokyo Electron Limited Plasma processing device
US7572737B1 (en) * 2006-06-30 2009-08-11 Lam Research Corporation Apparatus and methods for adjusting an edge ring potential substrate processing
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US8691047B2 (en) * 2009-11-17 2014-04-08 Applied Materials, Inc. Large area plasma processing chamber with at-electrode RF matching
US9443753B2 (en) * 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
KR101202957B1 (ko) * 2010-10-19 2012-11-20 주성엔지니어링(주) 플라즈마 발생용 안테나 및 이를 포함하는 기판처리장치
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US10580623B2 (en) * 2013-11-19 2020-03-03 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity

Also Published As

Publication number Publication date
CN108807125A (zh) 2018-11-13
TW201907439A (zh) 2019-02-16
US20180323042A1 (en) 2018-11-08
KR20180122295A (ko) 2018-11-12
JP2018190978A (ja) 2018-11-29

Similar Documents

Publication Publication Date Title
CN108807125A (zh) 处理腔室和递归分配连接器
US10847347B2 (en) Edge ring assembly for a substrate support in a plasma processing chamber
US11908666B2 (en) Stage and plasma processing apparatus
KR102825082B1 (ko) 에지 균일성 제어를 위한 조정가능한 연장되는 전극
TWI730202B (zh) 用於邊緣一致性控制的可調整延伸電極
US12198906B2 (en) Substrate support and plasma processing apparatus
TWI538093B (zh) 有著對稱供給結構之基板支架
TW201344743A (zh) 用於控制基板均勻度之方法及設備
KR101812646B1 (ko) 플라즈마 처리 장치 및 반도체 장치의 제조 방법
TWI621172B (zh) 電漿處理裝置
CN110752133B (zh) 基板支撑设备及具有基板支撑设备的等离子体处理设备
US11756807B2 (en) Power feeding mechanism and method for controlling temperature of a stage
US10446418B2 (en) Symmetric chamber body design architecture to address variable process volume with improved flow uniformity/gas conductance
CN111587481A (zh) 用于基板支撑件的处理配件
US20240347322A1 (en) Electrostatic chuck, focus ring, support base, plasma processing apparatus, and plasma processing method
CN108807126A (zh) 有源远边缘等离子体可调谐性
US20240242943A1 (en) Wafer placement table

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190816