KR20180122295A - 수동 방식으로 동작되는 경우에 접지에 대한 제어가능한 임피던스를 가능하게 하고 능동적으로 전력공급되는 경우에 플라즈마로의 대칭적인 rf 전력 입력을 가능하게 하는 대칭적인 피드 구조 및 드라이브를 갖는 보조 전극을 사용하여 플라즈마 프로세싱 챔버에서 웨이퍼 에지 시스를 조절하기 위한 방법 - Google Patents

수동 방식으로 동작되는 경우에 접지에 대한 제어가능한 임피던스를 가능하게 하고 능동적으로 전력공급되는 경우에 플라즈마로의 대칭적인 rf 전력 입력을 가능하게 하는 대칭적인 피드 구조 및 드라이브를 갖는 보조 전극을 사용하여 플라즈마 프로세싱 챔버에서 웨이퍼 에지 시스를 조절하기 위한 방법 Download PDF

Info

Publication number
KR20180122295A
KR20180122295A KR1020180050689A KR20180050689A KR20180122295A KR 20180122295 A KR20180122295 A KR 20180122295A KR 1020180050689 A KR1020180050689 A KR 1020180050689A KR 20180050689 A KR20180050689 A KR 20180050689A KR 20180122295 A KR20180122295 A KR 20180122295A
Authority
KR
South Korea
Prior art keywords
processing chamber
electrode
disposed
assembly
semicircular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020180050689A
Other languages
English (en)
Korean (ko)
Inventor
하이타오 왕
안와르 후사인
카르틱 라마스와미
제이슨 에이. 케니
제프리 루드윅
춘레이 장
원석 이
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20180122295A publication Critical patent/KR20180122295A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020180050689A 2017-05-02 2018-05-02 수동 방식으로 동작되는 경우에 접지에 대한 제어가능한 임피던스를 가능하게 하고 능동적으로 전력공급되는 경우에 플라즈마로의 대칭적인 rf 전력 입력을 가능하게 하는 대칭적인 피드 구조 및 드라이브를 갖는 보조 전극을 사용하여 플라즈마 프로세싱 챔버에서 웨이퍼 에지 시스를 조절하기 위한 방법 Ceased KR20180122295A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762500120P 2017-05-02 2017-05-02
US62/500,120 2017-05-02

Publications (1)

Publication Number Publication Date
KR20180122295A true KR20180122295A (ko) 2018-11-12

Family

ID=64015476

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180050689A Ceased KR20180122295A (ko) 2017-05-02 2018-05-02 수동 방식으로 동작되는 경우에 접지에 대한 제어가능한 임피던스를 가능하게 하고 능동적으로 전력공급되는 경우에 플라즈마로의 대칭적인 rf 전력 입력을 가능하게 하는 대칭적인 피드 구조 및 드라이브를 갖는 보조 전극을 사용하여 플라즈마 프로세싱 챔버에서 웨이퍼 에지 시스를 조절하기 위한 방법

Country Status (5)

Country Link
US (1) US20180323042A1 (enExample)
JP (1) JP2018190978A (enExample)
KR (1) KR20180122295A (enExample)
CN (2) CN209266350U (enExample)
TW (1) TW201907439A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
WO2016060712A1 (en) 2014-10-17 2016-04-21 Applied Materials, Inc. Cmp pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
JP6960390B2 (ja) * 2018-12-14 2021-11-05 東京エレクトロン株式会社 給電構造及びプラズマ処理装置
WO2020146034A1 (en) * 2019-01-08 2020-07-16 Applied Materials, Inc. Recursive coils for inductively coupled plasmas
CN114743854B (zh) 2019-05-14 2025-02-25 玛特森技术公司 末端执行器和用于处理工件的系统
KR102848754B1 (ko) * 2019-07-29 2025-08-20 어플라이드 머티어리얼스, 인코포레이티드 개선된 고온 척킹을 갖는 반도체 기판 지지부들
JP2021103641A (ja) * 2019-12-25 2021-07-15 東京エレクトロン株式会社 プラズマ発生源の検査方法及び負荷
JP7454961B2 (ja) * 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
JP7344821B2 (ja) * 2020-03-17 2023-09-14 東京エレクトロン株式会社 プラズマ処理装置
CN112331607B (zh) * 2020-10-28 2024-03-26 北京北方华创微电子装备有限公司 静电卡盘及半导体工艺设备
JP7544450B2 (ja) * 2021-03-17 2024-09-03 東京エレクトロン株式会社 プラズマ処理装置
JP7557429B2 (ja) * 2021-05-27 2024-09-27 東京エレクトロン株式会社 プラズマ処理装置
KR102932754B1 (ko) * 2021-12-24 2026-03-04 삼성전자주식회사 에지 링 어셈블리를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법
WO2025164456A1 (ja) * 2024-02-02 2025-08-07 東京エレクトロン株式会社 プラズマ処理装置
US12463075B2 (en) * 2024-02-23 2025-11-04 Applied Materials, Inc. Cathode assembly for integration of embedded electrostatic chuck (ESC)
US20250299929A1 (en) * 2024-03-25 2025-09-25 Applied Materials, Inc. Substrate support assembly having an edge voltage delivery system

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US5633073A (en) * 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
KR100796830B1 (ko) * 2000-04-12 2008-01-22 아익스트론 아게 기판코팅방법 수행용 반응실
US7311784B2 (en) * 2002-11-26 2007-12-25 Tokyo Electron Limited Plasma processing device
US7572737B1 (en) * 2006-06-30 2009-08-11 Lam Research Corporation Apparatus and methods for adjusting an edge ring potential substrate processing
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US8691047B2 (en) * 2009-11-17 2014-04-08 Applied Materials, Inc. Large area plasma processing chamber with at-electrode RF matching
US9443753B2 (en) * 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
KR101202957B1 (ko) * 2010-10-19 2012-11-20 주성엔지니어링(주) 플라즈마 발생용 안테나 및 이를 포함하는 기판처리장치
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US10580623B2 (en) * 2013-11-19 2020-03-03 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity

Also Published As

Publication number Publication date
CN108807125A (zh) 2018-11-13
TW201907439A (zh) 2019-02-16
US20180323042A1 (en) 2018-11-08
JP2018190978A (ja) 2018-11-29
CN209266350U (zh) 2019-08-16

Similar Documents

Publication Publication Date Title
US20180323042A1 (en) Method to modulate the wafer edge sheath in a plasma processing chamber
US11908666B2 (en) Stage and plasma processing apparatus
KR102749806B1 (ko) 에지-국부화된 이온 궤적 제어 및 플라즈마 동작을 통한 선단 에지 시스 및 웨이퍼 프로파일 튜닝
US10615004B2 (en) Distributed electrode array for plasma processing
US10770328B2 (en) Substrate support with symmetrical feed structure
US12198906B2 (en) Substrate support and plasma processing apparatus
JP5564549B2 (ja) 可変静電容量を有するプラズマ処理システムのための方法および装置
US6262538B1 (en) High density plasma tool with adjustable uniformity and stochastic electron heating for reduced gas cracking
CN110858531A (zh) 用于在等离子体处理腔室中的基板支撑件的边缘环组件
KR102786117B1 (ko) 급전 구조 및 플라즈마 처리 장치
KR20180122964A (ko) 액티브 파 에지 플라즈마 튜닝가능성
WO2022201351A1 (ja) プラズマ処理装置およびプラズマ処理方法
US20250379090A1 (en) Electrostatic chucks with hybrid pucks to improve thermal performance and leakage current stability

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20180502

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20210430

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20180502

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20221014

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20221219

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20221014

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I