TW201907439A - 使用有對稱饋送結構及驅動器以在被動方式操作時使可控阻抗接地及主動充能時對稱rf電力輸入至電漿中的輔助電極以調變電漿處理腔室中晶圓邊緣鞘之方法 - Google Patents

使用有對稱饋送結構及驅動器以在被動方式操作時使可控阻抗接地及主動充能時對稱rf電力輸入至電漿中的輔助電極以調變電漿處理腔室中晶圓邊緣鞘之方法 Download PDF

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Publication number
TW201907439A
TW201907439A TW107114804A TW107114804A TW201907439A TW 201907439 A TW201907439 A TW 201907439A TW 107114804 A TW107114804 A TW 107114804A TW 107114804 A TW107114804 A TW 107114804A TW 201907439 A TW201907439 A TW 201907439A
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TW
Taiwan
Prior art keywords
processing chamber
disposed
electrode
coupled
semicircular
Prior art date
Application number
TW107114804A
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English (en)
Chinese (zh)
Inventor
王海濤
安瓦爾 胡沙因
卡提克 拉馬斯瓦米
傑森Ａ 肯尼
杰弗里 路德維格
張純磊
李元錫
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201907439A publication Critical patent/TW201907439A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW107114804A 2017-05-02 2018-05-02 使用有對稱饋送結構及驅動器以在被動方式操作時使可控阻抗接地及主動充能時對稱rf電力輸入至電漿中的輔助電極以調變電漿處理腔室中晶圓邊緣鞘之方法 TW201907439A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762500120P 2017-05-02 2017-05-02
US62/500,120 2017-05-02

Publications (1)

Publication Number Publication Date
TW201907439A true TW201907439A (zh) 2019-02-16

Family

ID=64015476

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107114804A TW201907439A (zh) 2017-05-02 2018-05-02 使用有對稱饋送結構及驅動器以在被動方式操作時使可控阻抗接地及主動充能時對稱rf電力輸入至電漿中的輔助電極以調變電漿處理腔室中晶圓邊緣鞘之方法

Country Status (5)

Country Link
US (1) US20180323042A1 (enExample)
JP (1) JP2018190978A (enExample)
KR (1) KR20180122295A (enExample)
CN (2) CN209266350U (enExample)
TW (1) TW201907439A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI755800B (zh) * 2019-07-29 2022-02-21 美商應用材料股份有限公司 具有改善的高溫吸附的半導體基板支撐件
TWI863992B (zh) * 2019-05-14 2024-12-01 美商得昇科技股份有限公司 具有聚焦環調整組件的電漿處理設備
TWI895369B (zh) * 2020-03-17 2025-09-01 日商東京威力科創股份有限公司 電漿處理裝置
TWI923701B (zh) * 2021-03-17 2026-05-01 日商東京威力科創股份有限公司 電漿處理裝置

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US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
WO2016060712A1 (en) 2014-10-17 2016-04-21 Applied Materials, Inc. Cmp pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
JP6960390B2 (ja) * 2018-12-14 2021-11-05 東京エレクトロン株式会社 給電構造及びプラズマ処理装置
WO2020146034A1 (en) * 2019-01-08 2020-07-16 Applied Materials, Inc. Recursive coils for inductively coupled plasmas
JP2021103641A (ja) * 2019-12-25 2021-07-15 東京エレクトロン株式会社 プラズマ発生源の検査方法及び負荷
JP7454961B2 (ja) * 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
CN112331607B (zh) * 2020-10-28 2024-03-26 北京北方华创微电子装备有限公司 静电卡盘及半导体工艺设备
JP7557429B2 (ja) * 2021-05-27 2024-09-27 東京エレクトロン株式会社 プラズマ処理装置
KR102932754B1 (ko) * 2021-12-24 2026-03-04 삼성전자주식회사 에지 링 어셈블리를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법
WO2025164456A1 (ja) * 2024-02-02 2025-08-07 東京エレクトロン株式会社 プラズマ処理装置
US12463075B2 (en) * 2024-02-23 2025-11-04 Applied Materials, Inc. Cathode assembly for integration of embedded electrostatic chuck (ESC)
US20250299929A1 (en) * 2024-03-25 2025-09-25 Applied Materials, Inc. Substrate support assembly having an edge voltage delivery system

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US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US5633073A (en) * 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
KR100796830B1 (ko) * 2000-04-12 2008-01-22 아익스트론 아게 기판코팅방법 수행용 반응실
US7311784B2 (en) * 2002-11-26 2007-12-25 Tokyo Electron Limited Plasma processing device
US7572737B1 (en) * 2006-06-30 2009-08-11 Lam Research Corporation Apparatus and methods for adjusting an edge ring potential substrate processing
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US8691047B2 (en) * 2009-11-17 2014-04-08 Applied Materials, Inc. Large area plasma processing chamber with at-electrode RF matching
US9443753B2 (en) * 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
KR101202957B1 (ko) * 2010-10-19 2012-11-20 주성엔지니어링(주) 플라즈마 발생용 안테나 및 이를 포함하는 기판처리장치
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US10580623B2 (en) * 2013-11-19 2020-03-03 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI863992B (zh) * 2019-05-14 2024-12-01 美商得昇科技股份有限公司 具有聚焦環調整組件的電漿處理設備
TWI913988B (zh) 2019-05-14 2026-02-01 美商得昇科技股份有限公司 具有聚焦環調整組件的電漿處理設備
TWI755800B (zh) * 2019-07-29 2022-02-21 美商應用材料股份有限公司 具有改善的高溫吸附的半導體基板支撐件
TWI895369B (zh) * 2020-03-17 2025-09-01 日商東京威力科創股份有限公司 電漿處理裝置
TWI923701B (zh) * 2021-03-17 2026-05-01 日商東京威力科創股份有限公司 電漿處理裝置

Also Published As

Publication number Publication date
CN108807125A (zh) 2018-11-13
US20180323042A1 (en) 2018-11-08
KR20180122295A (ko) 2018-11-12
JP2018190978A (ja) 2018-11-29
CN209266350U (zh) 2019-08-16

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