CN209071327U - A kind of high-voltage switch gear diode package structure - Google Patents
A kind of high-voltage switch gear diode package structure Download PDFInfo
- Publication number
- CN209071327U CN209071327U CN201821953403.8U CN201821953403U CN209071327U CN 209071327 U CN209071327 U CN 209071327U CN 201821953403 U CN201821953403 U CN 201821953403U CN 209071327 U CN209071327 U CN 209071327U
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- Prior art keywords
- conductor layer
- chip
- voltage switch
- layer
- package structure
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- 239000004020 conductor Substances 0.000 claims abstract description 103
- 239000010410 layer Substances 0.000 claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
Landscapes
- Push-Button Switches (AREA)
- Manufacture Of Switches (AREA)
- Contacts (AREA)
Abstract
The utility model discloses a kind of high-voltage switch gear diode package structures; including be sequentially arranged from bottom to up substrate, be printed on upper surface of base plate the first conductor layer and the second conductor layer, chip matrix, electric conductor and protective layer, further include being printed on base lower surface third conductor layer and the 4th conductor layer, the first side conductor layer and second side conductor layer, electrode layer set on substrate side；First side conductor layer is connected with the first conductor layer and the 4th conductor layer respectively；Second side conductor layer is connected with the second conductor layer and third conductor layer respectively；Electrode layer be covered on substrate, the first side conductor layer, second side conductor layer, third conductor layer and the 4th conductor layer bottom surface.The utility model utilizes substrate and the connection conducting of chip matrix combination Y shape electric conductor, the positive electrode of chip is located at the upper surface of chip, negative electrode is located at the lower surface of chip, facilitate chip assembly welding, reduce the production process of product, the thickness for reducing product, is more suitable the miniaturized products demand of client.
Description
Technical field
The utility model belongs to diode packaging technology field, and in particular to a kind of high-voltage switch gear diode package structure.
Background technique
Diode packaging technology currently on the market is usually with copper stent as carrier, with die bond, bonding wire and molding etc.
Technology is packaged, and completes encapsulation using plating and punching course.It is opposite that encapsulation technology above-mentioned is usually applicable only to voltage
Lower low power diodes, for the circuit of high-power high-voltage, it usually needs high-voltage switch gear diode is added, more directly,
It is more convenient, reduce the conversion on some circuits, is born with the design of mitigation technique personnel.
Traditional die bond wire soldering technology flow chart is comparatively laborious, and using a variety of processing procedures, raw material consumption is more, production effect
Rate is low, and overall cost is higher.Although bonding wire craft reaches its maturity, but its to be limited to gauge or diameter of wire too small, large charge cannot be transmitted,
Processing procedure risk and failure probability or relatively high.On mold pressing procedure, due to the architectural characteristic of copper stent, the hair of excessive glue
Raw probability is also relatively high.It is poor to be molded the epoxy resin heat-conducting effect used, product relies primarily on copper stent heat dissipation, is working
When temperature is higher, the performance of product will be reduced.The glue cake of molding contains halogen, is unfavorable for environmental protection.Traditional bonding wire encapsulation
There is the problem of height limitation, causes finished product thickness that can not reduce, it is more in client assembling design space hold, be not suitable for small-sized
Change the demand of product.
Utility model content
In view of the above-mentioned problems, the utility model proposes a kind of high-voltage switch gear diode package structure, using ceramic substrate and
The connection conducting of chip matrix combination Y shape electric conductor, the positive electrode of chip are set to the upper of chip (i.e. high-voltage switch gear diode chip for backlight unit)
Surface, negative electrode are set to the lower surface of chip, facilitate chip assembly welding, reduce the production process of product, reduce the thickness of product
Degree, is more suitable the miniaturized products demand of client.
It realizes above-mentioned technical purpose, reaches above-mentioned technical effect, the utility model is achieved through the following technical solutions:
A kind of high-voltage switch gear diode package structure, comprising:
Substrate；
It is printed on the first conductor layer of the upper surface of base plate, first conductor layer includes the first root segment, at least two
First section；The end of first root segment is connected with one end of each first section respectively；
It is printed on the second conductor layer of the ceramic substrate upper surface；
Chip matrix, the chip matrix include at least two chips, and the upper and lower surfaces of the chip are respectively equipped with positive electricity
Pole and negative electrode, the lower surface of each chip are connected with the upper surface of corresponding first section respectively；
Electric conductor, the electric conductor includes the second root segment, be connected with second root segment end at least two second
Section；The bottom surface of each second section respectively with the upper surface of corresponding chip be connected, the bottom surface of second root segment with it is described
The upper surface of second conductor layer is connected；
Protective layer, the protective layer are covered in the substrate, the first conductor layer, the second conductor layer, chip and electric conductor
Upper surface；
It is printed on the base lower surface third conductor layer and the 4th conductor layer；
The first side conductor layer and second side conductor layer set on substrate side；The first side conductor layer is respectively with described
One conductor layer is connected with the 4th conductor layer；Second side conductor layer respectively with second conductor layer and third conductor layer phase
Even；
Electrode layer, the electrode layer are covered on the substrate, the first side conductor layer, second side conductor layer, third conductor layer
With the bottom surface of the 4th conductor layer.
The chip matrix includes two chips being provided separately as a further improvement of the utility model,；It is described to lead
Electric body is in Y type, including the second root segment and two second sections.
The substrate is ceramic substrate as a further improvement of the utility model,.
First conductor layer and the second conductor layer are by conductive silver glue system as a further improvement of the utility model,
At.
It is equipped on second root segment and the bottom surface of each second section as a further improvement of the utility model,
Rectangular conductive projection.
The protective layer is black glue layer as a further improvement of the utility model, is made of black epoxy, halogen
Cellulose content summation is 0ppm.
The electric conductor is copper sheet as a further improvement of the utility model, and width is 0.15 ± 0.05mm.
The electrode layer is made by the way that nickel plating is tin plating as a further improvement of the utility model,.
The chip is high-voltage switch diode chip for backlight unit as a further improvement of the utility model,.
The overall thickness of the high-voltage switch gear diode package structure is 0.75 as a further improvement of the utility model,
±0.1mm。
Compared with prior art, the utility model has the beneficial effects that
1, the high-voltage switch gear diode package structure of the utility model uses chip matrix structure, dispersion products inner heat
Source, cooperates the preferable pyroconductivity of ceramic substrate, and product service performance is more stable, more reliable；
2, the Y shape copper sheet that the utility model uses replaces traditional bonding wire connection so that product is more frivolous, copper sheet it is transversal
Area is much larger than traditional bonding wire cross-sectional area, realizes the transmitting of large charge, completes the requirement of high-voltage switch gear diode high load capacity；
3, the high-voltage switch gear diode package structure of the utility model is effectively kept away by the way of component bottom-side electrodes
Exempt from the phenomenon of setting up a monument that the elongated SMD components of microminiature are generated in Reflow Soldering, greatly improves the operation yield of SMT factory.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of embodiment of the utility model.
Specific embodiment
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, with reference to embodiments, to this
Utility model is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain that this is practical
It is novel, it is not used to limit the utility model.
The application principle of the utility model is explained in detail with reference to the accompanying drawing.
As shown in Figure 1, the utility model provides a kind of high-voltage switch gear diode package structure, specially a kind of ultra-thin height
Compress switch diode package structure, and the overall thickness of the high-voltage switch gear diode package structure is 0.75 ± 0.1mm comprising:
Substrate 1；The substrate 1 described in the preferred embodiment of the utility model is ceramic substrate；
It is printed on the first conductor layer 2 of 1 upper surface of substrate；First conductor layer 2 includes the first root segment 201, extremely
Few two first sections 202；The end of first root segment 201 is connected with one end of each first section 202 respectively；Such as Fig. 1 institute
Show, in a kind of specific embodiment of the utility model, first conductor layer 2 is three trouble shapes comprising 201 He of the first root segment
Two first sections 202, described two first section 202 are L-shaped, wherein the end phase of one end and first root segment 201
Even；
It is printed on the second conductor layer 3 of 1 upper surface of substrate, second conductor layer 3 is strip；Preferably, institute
It states the first conductor layer 2 and the second conductor layer 3 is made of conductive silver glue；
Chip matrix, the chip matrix include at least two chips 4, and the upper and lower surfaces of the chip 4 are respectively equipped with just
Electrode and negative electrode, the lower surface of each chip 4 are connected with the upper surface of corresponding first section respectively；As shown in Figure 1, in this reality
With in a kind of novel specific embodiment, the chip rectangle includes two chips 4 spaced apart from each other, and each chip 4 is respectively arranged on
On the first segment and second segment；In the other embodiments of the utility model, the number of chips in the chip matrix may be used also
To be other numbers, the quantity and the quantity phase of chip of first section and second section in the first conductor layer 2 and electric conductor 5
Unanimously, the chip high-voltage switch diode chip for backlight unit in the utility model；
Electric conductor 5, the electric conductor 5 include 501, at least two second sections 502 of the second root segment；Each second section 502
Bottom surface be connected respectively with the upper surface of corresponding chip 4, the bottom surface of second root segment 501 and second conductor layer
3 upper surface is connected；Preferably, rectangular conductive is equipped on second root segment 501 and the bottom surface of each second section 502
Projection, the electric conductor are copper sheet, and width is 0.15 ± 0.05mm；
Protective layer 6, the protective layer 6 are covered in the substrate 1, the first conductor layer 2, the second conductor layer 3, chip 4 and lead
The upper surface of electric body 5；In a kind of specific embodiment of the utility model, the protective layer 6 is black glue layer, by black epoxy tree
Rouge is made, and content of halogen summation is 0ppm
It is printed on the 1 lower surface third conductor layer 7 of substrate and the 4th conductor layer 8；The third conductor layer 7 and the 4th is led
Body layer 8 is made of conductive silver glue；
The first side conductor layer 9 and second side conductor layer 10 set on 1 side of substrate；The first side conductor layer 9 divides
It is not connected with first conductor layer 2 and the 4th conductor layer 8；Second side conductor layer 10 respectively with second conductor layer 3
It is connected with third conductor layer 7；What the first side conductor layer 9 and second side conductor layer 10 were formed using vacuum splashing and plating mode
Nickel chromium triangle copper alloy layer (or other conduction property alloy-layers)；
Electrode layer, the electrode layer are covered on the first side conductor layer 9, second side conductor layer 10 and third conductor layer 7
It with 8 surface of the 4th conductor layer, is formed using nickel plating or tin plating technique, the electrode as product SMT welding assembly.
The high-voltage switch gear diode package structure of the utility model is a kind of ultra-thin high-voltage switch gear diode package structure,
Using Y shape copper sheet and chip matrix connected structure, the carrying demand of the big load of product high voltage high power is fully met, is made
Product overall thickness it is thinner；Pyrotoxin is dispersed using chip matrix, substrate is used as in conjunction with the preferable ceramics of heating conduction, makes product
Performance is more stable, is applicable in market mainstream demand, meets the design concept in client's modern times.
The basic principles and main features of the present invention and the advantages of the present invention have been shown and described above.Current row
The technical staff of industry is described in above embodiments and description it should be appreciated that the present utility model is not limited to the above embodiments
Only illustrate the principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, the utility model is also
It will have various changes and improvements, these various changes and improvements fall within the scope of the claimed invention.The utility model
Claimed range is defined by the appending claims and its equivalent thereof.
Claims (10)
1. a kind of high-voltage switch gear diode package structure characterized by comprising
Substrate；
It is printed on the first conductor layer of the upper surface of base plate, first conductor layer includes the first root segment, at least two first
Branch section；The end of first root segment is connected with one end of each first section respectively；
It is printed on the second conductor layer of the upper surface of base plate；
Chip matrix, the chip matrix include at least two chips, the upper and lower surfaces of the chip be respectively equipped with positive electrode and
Negative electrode, the lower surface of each chip are connected with the upper surface of corresponding first section respectively；
Electric conductor, the electric conductor include the second root segment, at least two second sections being connected with second root segment end；
The bottom surface of each second section respectively with the upper surface of corresponding chip be connected, the bottom surface of second root segment with it is described
The upper surface of second conductor layer is connected；
Protective layer, the protective layer are covered in the upper table of the substrate, the first conductor layer, the second conductor layer, chip and electric conductor
Face；
It is printed on the base lower surface third conductor layer and the 4th conductor layer；
The first side conductor layer and second side conductor layer set on substrate side；The first side conductor layer is led with described first respectively
Body layer and the 4th conductor layer are connected；Second side conductor layer is connected with second conductor layer and third conductor layer respectively；
Electrode layer, the electrode layer are covered on the substrate, the first side conductor layer, second side conductor layer, third conductor layer and
The bottom surface of four conductor layers.
2. a kind of high-voltage switch gear diode package structure according to claim 1, it is characterised in that: the chip matrix packet
Include two chips being provided separately；
The electric conductor is in Y type, including the second root segment and two second sections.
3. a kind of high-voltage switch gear diode package structure according to claim 1, it is characterised in that: the substrate is ceramics
Substrate.
4. a kind of high-voltage switch gear diode package structure according to claim 1, it is characterised in that: first conductor layer
It is made with the second conductor layer of conductive silver glue.
5. a kind of high-voltage switch gear diode package structure according to claim 1, it is characterised in that: second root segment with
And rectangular conductive projection is equipped on the bottom surface of each second section.
6. a kind of high-voltage switch gear diode package structure according to claim 1, it is characterised in that: the protective layer is black
Glue-line is made of black epoxy, and content of halogen summation is 0ppm.
7. a kind of high-voltage switch gear diode package structure according to claim 1, it is characterised in that: the electric conductor is copper
Piece, width are 0.15 ± 0.05mm.
8. a kind of high-voltage switch gear diode package structure according to claim 1, it is characterised in that: the electrode layer passes through
Nickel plating is tin plating to be made.
9. a kind of high-voltage switch gear diode package structure according to claim 1, it is characterised in that: the chip is high electricity
Compress switch diode chip for backlight unit.
10. a kind of high-voltage switch gear diode package structure according to claim 1, it is characterised in that: the high-voltage switch gear
The overall thickness of diode package structure is 0.75 ± 0.1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821953403.8U CN209071327U (en) | 2018-11-26 | 2018-11-26 | A kind of high-voltage switch gear diode package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821953403.8U CN209071327U (en) | 2018-11-26 | 2018-11-26 | A kind of high-voltage switch gear diode package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209071327U true CN209071327U (en) | 2019-07-05 |
Family
ID=67100250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821953403.8U Active CN209071327U (en) | 2018-11-26 | 2018-11-26 | A kind of high-voltage switch gear diode package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209071327U (en) |
-
2018
- 2018-11-26 CN CN201821953403.8U patent/CN209071327U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231020 Address after: 226000 No. 789 Kangfu Road, Nantong High tech Industrial Development Zone, Nantong City, Jiangsu Province Patentee after: LIZHI ELECTRONICS (NANTONG) CO.,LTD. Address before: No. 989, Han Pu Road, Kunshan City, Suzhou, Jiangsu Patentee before: LIZ ELECTRONICS (KUNSHAN) Co.,Ltd. |