CN209029379U - A kind of novel broad stopband power semiconductor - Google Patents
A kind of novel broad stopband power semiconductor Download PDFInfo
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- CN209029379U CN209029379U CN201822060258.7U CN201822060258U CN209029379U CN 209029379 U CN209029379 U CN 209029379U CN 201822060258 U CN201822060258 U CN 201822060258U CN 209029379 U CN209029379 U CN 209029379U
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Abstract
The utility model relates to a kind of novel broad stopband power semiconductors, the device includes the first conductive type substrate, it is deposited on the first conductive type epitaxial layer of substrate, the first and second well regions inside epitaxial layer, there is the second conductive type in first and second well regions, it is set to the first conductive type injection region and the second conductive type injection region in the first and second well regions, the multiple grooves being set on the inside of the first and second well regions, the Ohm contact electrode of the first conductive type injection region and the second conductive type injection region top is set, the second conductive type doped layer of groove side is set, the Schottky contact electrode at top between the second conductive type doped layer is set, POLY grid are filled in the trench, the oxide layer that can wrap POLY grid is set around POLY grid, rear electrode is set in the bottom of the first conductive type substrate, Front electrode is set at the top of Ohm contact electrode, Schottky contact electrode and passivation layer.The reverse anchor jam nut of this device is low, and afterflow ability is big.
Description
Technical field
The present invention relates to power semiconductor device technology field more particularly to a kind of novel broad stopband power semiconductor devices
Part.
Background technique
With global rapid technological growth, in space flight, nuclear technology, the energy, the fields such as communication propose power electronic equipment
Higher requirement, it is desirable that it can have small size, lighting, high conversion efficiency and high temperature high reliability grade high characteristic, pass
The silicon-based devices of system have been difficult to meet the demand, and the high performance power semiconductor devices of new material, new construction is urgently developed, and
Semiconductor material with wide forbidden band silicon carbide, because it is big with forbidden bandwidth, saturation drift velocity height punctures electric-field strength thermal conductivity height etc.
Good characteristic under exceedingly more odious environment, can play the energy conversion characteristic of efficient stable, become and solve at present newly
The optimal selection of type energy transformation device.
MOS switch device is most crucial component in power electronic equipment, compared with silicon substrate MOS, carbide MOS devices electric current
Density is big, and with for silicon IGBT, the few son storage benefit of carbide MOS devices, switching speed faster, and carbofrax material
Itself has high heat-conduction coefficient, is conducive to reduce capacitor and inductor and radiator in module to reduce the body of integral device
Long-pending and quality reduces equipment cost, improves the transfer efficiency of equipment.
However carbide MOS devices also have the shortcomings that it is corresponding, due to its broad stopband width, MOS body diode conducting pressure
Drop is high, and when reverse operation, loss is big, and traditional method anti-and low conduction voltage drop SiC Schottky two in power electronic equipment
Pole pipe improves its reversed afterflow ability, reduces loss.But the volume and cost for adding additional equipment are done so, electricity is unfavorable for
The miniaturization high power density of power electronic equipment.
Summary of the invention
The purpose of the present invention is to provide a kind of novel broad stopband power semiconductors, in the power semiconductor body
Interior integrated junction barrier schottky diode (JBS) reduces power semiconductor body diode conducting voltage, and it is reversed to reduce device
Loss, improves its afterflow ability.
To achieve the goals above, the technical solution adopted by the present invention is a kind of novel broad stopband power semiconductor,
Including the first conductive type substrate, the first conductive type epitaxial layer for being deposited on substrate, first inside epitaxial layer and
With the second conductive type, the first conductive type being set in the first and second well regions injection in two well regions, the first and second well regions
Area and the second conductive type injection region, the multiple grooves being set on the inside of the first and second well regions, setting are injected in the first conductive type
The Ohm contact electrode on area and the second conductive type injection region top, the second conductive type doped layer that groove side is set, setting
The Schottky contact electrode at top between the second conductive type doped layer, groove extend to substrate direction, fill in the trench
POLY grid, setting can wrap the oxide layer of POLY grid around POLY grid, get an electric shock in Ohm contact electrode and schottky junctions
One passivation layer is set between pole, rear electrode is set in the bottom of the first conductive type substrate, in Ohm contact electrode, schottky junctions
Front electrode is arranged in the top of touched electrode and passivation layer.
As an improvement of the present invention, the second conductive type doped layer injects the first conductive type extension using angle
In layer, the second conductive type doped layer forms half pack arrangement to POLY grid.
As an improvement of the present invention, the angular range of the second conductive type doped layer injection is 22 ° -45 °.
As an improvement of the present invention, the first conductive type injection region and the second conductive type injection region are respectively positioned on
One and second well region top, Ohm contact electrode connects with the surface of the first conductive type injection region and the second conductive type injection region
Touching, Ohm contact electrode cover the whole surface of the second conductive type injection region, and the second conductive type injection region covers the first conductive type
A part of surface of injection region, passivation layer cover the remainder surface of the first conductive type injection region.
As an improvement of the present invention, the passivation layer cover POLY grid and surrounding oxide layer it is entire on
Surface.
As an improvement of the present invention, the Schottky contact electrode connects with the surface of the second conductive type doped layer
Touching.
Compared with the existing technology, overall construction design of the invention is ingenious, structurally reasonable stabilization, volume compact, in power
Reversed work can be effectively reduced to improve device body diode current flow loss characteristic in integrated schottky diode structure in MOS device
System loss under operation mode improves switching speed, and saves external freewheeling diode in practical applications, can be reduced machine system
Size and parasitic parameter also reduce the cost of system；In the device structure, it injects to form junction barrier schottky using wide-angle
The p type island region domain of diode helps to reduce Schottky surface field, to reduce element leakage, while p type island region to POLY row at
Half pack arrangement is conducive to improve the bottom POLY spike electric field, improves device reliability.
Detailed description of the invention
Fig. 1 is the structure diagram of the novel broad stopband power semiconductor of the preferred embodiment of the present invention.
Fig. 2 is production the first and second well regions letter made in novel broad stopband power semiconductor technique shown in Fig. 1
Figure.
Fig. 3 is the production etching groove schematic diagram made in novel broad stopband power semiconductor technique shown in Fig. 1.
Fig. 4 is the production the second conductive type doped layer made in novel broad stopband power semiconductor technique shown in Fig. 1
Schematic diagram.
Fig. 5 is the production grid oxic horizon and POLY made in novel broad stopband power semiconductor technique shown in Fig. 1
Grid and the first and second conductivity type implant region schematic diagrams.
Fig. 6 is the production passivation layer deposition and ohm made in novel broad stopband power semiconductor technique shown in Fig. 1
Contact electrode and Schottky contact electrode schematic diagram.
Fig. 7 is to make production front electrode shown in Fig. 1 in novel broad stopband power semiconductor technique, rear electrode
Schematic diagram.
In figure: 1- rear electrode, 2- N+ substrate, 3- N-type epitaxy layer, 4- p-type doped layer, 5- oxide layer, 6- POLY
Grid, the area 7- PWELL, the injection region 8- P+, 9- Ohm contact electrode, 10- front electrode, the injection region 11- N+, 12- schottky junctions
Touched electrode.
Specific embodiment
In order to deepen the understanding of the present invention and recognize, the invention will be further described below in conjunction with the accompanying drawings and introduces.
As shown in Figure 1, a kind of novel broad stopband power semiconductor, including N+ substrate 2, it is deposited on N+ substrate 2
N-type epitaxy layer 3, the area PWELL 7(, that is, p-well region inside epitaxial layer), the injection region N+ 11 that is set in p-well region and P+
Injection region 8, the multiple grooves being set on the inside of p-well region, the Ohmic contact electricity that 8 top of the injection region N+ 11 and the injection region P+ is set
Pole 9, the p-type doped layer 4 that groove side is set, the Schottky contact electrode 12 that top between p-type doped layer 4 is set, ditch
Slot extends to substrate direction, fills POLY grid 6 in the trench, and setting can wrap the oxidation of POLY grid 6 around POLY grid 6
Layer 5, is arranged a passivation layer between Ohm contact electrode 9 and Schottky contact electrode 12, and the back side is arranged in the bottom of N+ substrate 2
Front electrode 10 is arranged at the top of Ohm contact electrode 9, Schottky contact electrode 12 and passivation layer in electrode 1.In the power
Ohm contact electrode 9 is set in MOS device, forms the good electrode of super-low resistance convenient for metal and semiconductor, and Xiao Te is set
Base contacts electrode 12, can make have lower cut-in voltage under positive operative scenario, and under reverse active mode, can have certain
Blocking ability prevents the rapid increase of leakage current.
Wherein, the p-type doped layer 4 is injected to form Schottky two using angle using in angle injection N-type epitaxy layer 3
The p type island region domain of pole pipe helps to reduce Schottky surface field, to reduce element leakage.In addition, injecting shape using wide-angle
At p type island region domain when, different angles will form different p type island region domains, it is preferred that the angle model that the p-type doped layer 4 is injected
Enclose is 22 ° -45 °.Meanwhile p-type doped layer 4 forms half pack arrangement to POLY grid 6, is conducive to improve the bottom POLY spike electric field,
Improve device reliability.
The Schottky contact electrode 12 is in contact with the surface of p-type doped layer 4, and the passivation layer covers POLY grid 6
And the entire upper surface of surrounding oxide layer 5.
The injection region N+ 11 and the injection region P+ 8 are respectively positioned on the top of p-well region, Ohm contact electrode 9 and the injection region P+ 8
Surface is in contact, and Ohm contact electrode 9 covers the whole surface of the injection region P+ 8, and the injection region P+ 8 covers one of the injection region N+ 11
Divide surface, passivation layer covers the remainder surface of the injection region N+ 11.
In the internal integrated junction barrier schottky diode of power MOS (Metal Oxide Semiconductor) device proposed by the invention, MOS device is reduced
Body diode conducting voltage also reduces the reverse anchor jam nut of device, improves its afterflow ability.In this way, existing when MOS device work
When reverse mode, i.e., front electrode 10 connects high potential, and rear electrode 1 connects low potential, and there are two current paths for device, first is that P
The PN junction access of +/PW/Nepi/N+, second is that Schottky electrode/Nepi/N+ Schottky diode access.And since PN is connected
Resistance is much larger than Schottky diode, and electric current can select Schottky diode access first, therefore have higher reversed afterflow energy
Power, while Schottky diode conduction voltage drop is low, its loss is also very low under reverse active mode.
The method for making above-mentioned broad stopband power semiconductor specifically comprises the following steps:
(1) as shown in Fig. 2, p-well region makes: providing N+ substrate 2, then on this substrate by the deposition of N-type epitaxy layer 3, most
Upper light shield afterwards carries out selective ion implanting on 3 surface of N-type epitaxy layer, and forms p-well region in the top two sides of epitaxial layer, in P
Injecting p-type ion in well region；
(2) as shown in figure 3, etching groove: carrying out Trench etching groove on the inside of p-well region, and make groove to lining
Bottom direction extends；
(3) as shown in figure 4, p-type doped layer 4 makes: upper light shield carries out selective ion implanting, and uses in groove side
Angle injecting p-type ion makes p-type doped layer 4；
(4) as shown in figure 5, grid oxic horizon 5 and POLY grid 6 make: depositing POLY grid 6 in the trench, and use high temperature
The grid oxic horizon 5 that can wrap POLY grid 6 is arranged in gate oxidation process around POLY grid 6；Semiconductor surface high temperature grid oxygen
Technique be certain special gas atmosphere and at a temperature of, the grid oxic horizon 5 of high quality and surface low defect can be grown.
(5) as shown in figure 5, the injection region N+ 11 and the injection region P+ 8 make: upper light shield is selected on 3 surface of N-type epitaxy layer
Selecting property ion implanting injects N+ type ion in p-well region and forms the injection region N+ 11, and injects P+ type ion in p-well region and form P
+ injection region 8；
(6) as shown in fig. 6, passivation layer deposition and the production of Ohm contact electrode 9 and Schottky contact electrode 12:
One layer of certain thickness passivation layer is deposited in substrate epitaxial layer surface, which can be silica, nitrogen
SiClx etc. is dielectrically separated from material, and then upper light shield, etches ohmic contact hole, then sputter ohmic metal, and high temperature rapid thermal annealing,
It is reacted in metal with semiconductor interface contacting surface and generates metal silicide to form Ohmic contact；Then light shield is gone up again, etches Schottky
Contact hole, then schottky metal and high temperature rapid thermal annealing are sputtered, Schottky contacts are formed in the metal and semiconductor contact surface.
(7) as shown in fig. 7, front electrode 10, rear electrode 1 make:
The metallic aluminium on the top (i.e. positive) of Ohm contact electrode 9, Schottky contact electrode 12 and passivation layer, then on
Light shield carries out metal etch and forms front electrode 10, and metal forms the back side on the bottom (i.e. the back side) of the first conductive type substrate
Electrode 1.
The technical means disclosed in the embodiments of the present invention is not limited only to technological means disclosed in above embodiment, further includes
Technical solution consisting of any combination of the above technical features.It should be pointed out that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (6)
1. a kind of novel broad stopband power semiconductor, it is characterised in that: including the first conductive type substrate, be deposited on substrate it
On the first conductive type epitaxial layer, the first and second well regions inside epitaxial layer, in the first and second well regions have second
Conductivity type, the first conductive type injection region being set in the first and second well regions and the second conductive type injection region are set to first
It is connect with multiple grooves on the inside of the second well region, ohm for being arranged in the first conductive type injection region and the second conductive type injection region top
Touched electrode, the second conductive type doped layer that groove side is set, the Xiao Te that top between the second conductive type doped layer is set
Base contacts electrode, and groove extends to substrate direction, fills POLY grid in the trench, being arranged around POLY grid can wrap
A passivation layer is arranged in the oxide layer of POLY grid between Ohm contact electrode and Schottky contact electrode, serves as a contrast in the first conductive type
Rear electrode is arranged in the bottom at bottom, and front electrode is arranged at the top of Ohm contact electrode, Schottky contact electrode and passivation layer.
2. a kind of novel broad stopband power semiconductor as described in claim 1, which is characterized in that the second conductive type
For doped layer using in angle injection the first conductive type epitaxial layer, the second conductive type doped layer forms half pack arrangement to POLY grid.
3. a kind of novel broad stopband power semiconductor as claimed in claim 2, which is characterized in that the second conductive type
The angular range of doped layer injection is 22 ° -45 °.
4. a kind of novel broad stopband power semiconductor as claimed in claim 3, which is characterized in that the Schottky contacts
Electrode is in contact with the surface of the second conductive type doped layer.
5. a kind of novel broad stopband power semiconductor as claimed in claim 4, which is characterized in that the first conductive type
Injection region and the second conductive type injection region are respectively positioned on the top of the first and second well regions, and Ohm contact electrode and the first conductive type are infused
The surface for entering area and the second conductive type injection region is in contact, and Ohm contact electrode covers the whole table of the second conductive type injection region
Face, the second conductive type injection region cover a part of surface of the first conductive type injection region, and passivation layer covers the first conductive type injection
The remainder surface in area.
6. a kind of novel broad stopband power semiconductor as claimed in claim 5, which is characterized in that the passivation layer covering
The firmly entire upper surface of POLY grid and surrounding oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201822060258.7U CN209029379U (en) | 2018-12-10 | 2018-12-10 | A kind of novel broad stopband power semiconductor |
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| CN201822060258.7U CN209029379U (en) | 2018-12-10 | 2018-12-10 | A kind of novel broad stopband power semiconductor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390336A (en) * | 2018-12-10 | 2019-02-26 | 西安电子科技大学 | A kind of novel broad stopband power semiconductor and preparation method thereof |
| CN110190129A (en) * | 2019-07-04 | 2019-08-30 | 深圳爱仕特科技有限公司 | A kind of field-effect tube and preparation method thereof |
| CN110534584A (en) * | 2019-08-02 | 2019-12-03 | 重庆大学 | A kind of high efficiency rectifier and its manufacturing method |
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2018
- 2018-12-10 CN CN201822060258.7U patent/CN209029379U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390336A (en) * | 2018-12-10 | 2019-02-26 | 西安电子科技大学 | A kind of novel broad stopband power semiconductor and preparation method thereof |
| CN109390336B (en) * | 2018-12-10 | 2024-03-26 | 西安电子科技大学 | Novel wide forbidden band power semiconductor device and manufacturing method thereof |
| CN110190129A (en) * | 2019-07-04 | 2019-08-30 | 深圳爱仕特科技有限公司 | A kind of field-effect tube and preparation method thereof |
| CN110190129B (en) * | 2019-07-04 | 2024-03-12 | 深圳爱仕特科技有限公司 | Field effect transistor and preparation method thereof |
| CN110534584A (en) * | 2019-08-02 | 2019-12-03 | 重庆大学 | A kind of high efficiency rectifier and its manufacturing method |
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Address after: 710075, No. 2 Taibai South Road, Yanta District, Shaanxi, Xi'an Co-patentee after: Suzhou Covette Semiconductor Co., Ltd. Patentee after: Xi'an University of Electronic Science and Technology Address before: 710075, No. 2 Taibai South Road, Yanta District, Shaanxi, Xi'an Co-patentee before: Iron of fine quality Witter, Suzhou Semiconductor Co., Ltd Patentee before: Xi'an University of Electronic Science and Technology |