CN208580761U - A kind of firm LED chip of ITO - Google Patents
A kind of firm LED chip of ITO Download PDFInfo
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- CN208580761U CN208580761U CN201721809316.0U CN201721809316U CN208580761U CN 208580761 U CN208580761 U CN 208580761U CN 201721809316 U CN201721809316 U CN 201721809316U CN 208580761 U CN208580761 U CN 208580761U
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Abstract
The firm LED chip of a kind of ITO provided by the utility model is included in the one side of substrate GaAs and buffer layer, n-AIGaInP limiting layer, MQW multiple quantum well active layer, p-AIGaInP limiting layer and p-GaP Window layer is successively arranged from the bottom up；Ito thin film layer is made in p-GaP Window layer, metal electrode layer is made on ito thin film layer, and n-electrode layer is arranged in the GaAs substrate other side；Metal electrode layer a part is connected in p-GaP Window layer, and a part is connected on ito thin film layer.The firm LED chip of a kind of ITO disclosed by the utility model, metal electrode layer is connected with ito thin film layer and roughened p-GaP Window layer simultaneously, it avoids and causes ito thin film layer to fall off in bonding wire test, improve the adhesion and integrality of entire metal electrode layer, ensure luminescent device stable operating voltage, improve the bonding wire reliability of product, Improving The Quality of Products and yield.
Description
Technical field
The utility model belongs to semiconductor light-emitting-diode technical field, and in particular to a kind of firm LED chip of ITO.
Background technique
LED has the advantages such as high photosynthetic efficiency, low energy consumption, long-life, high security, high-environmental, is before one kind has wide application
The lighting method of scape, by the attention of more and more national, LED is widely used in High Efficiency Solid-State lighting area at present, such as
Display screen, lamps for vehicle, backlight, traffic lights, Landscape Lighting etc..
As shown in Fig. 1, since the photosphere that goes out of conventional AlGaInP light emitting diode is GaP layers, while GaP layers also play
The important function of ohmic contact layer and current expansion, this will make electric current be easy to concentrate the underface region stream from contacting with electrode
It crosses, i.e., the current density in region increases immediately below electrode, electric current cannot be made adequately to be extended, and reduces LED luminous efficiency.
Ito thin film with good lateral current, while having transmitance height, good conductivity, wear-resistant, resistance to compared to GaP layer
The advantages that corrosion, and it is good with GaP layers of adhesiveness, therefore, ito thin film is normally used for bright as AlGaInP base chip is improved
The transparent electrode material of degree.In practical applications, one layer of ito thin film is grown on GaP layers, then redeposited metal electrode
Layer, uses as bonding pad material, and it is easy to appear ITO layers to fall off, metal electrode layer is de- for discovery in the bonding wire test to pad
Exception is fallen, its pad performance and chip use reliability is caused to be severely impacted.
Summary of the invention
It is to be solved in the utility model be existing LED chip be easy to appear ITO layer fall off, metal electrode layer fall off it is different
Often, the technical issues of causing its pad performance and chip use reliability to be severely impacted, provides a kind of easy to produce, luminous
The firm LED chip of high-efficient, bonding wire high reliablity ITO.
The technical issues of in order to solve the utility model, the utility model are achieved through the following technical solutions: a kind of
The firm LED chip of ITO is included in 100 side of GaAs substrate and buffer layer 101, n-AIGaInP limitation is successively arranged from the bottom up
Layer 102, MQW multiple quantum well active layer 103, p-AIGaInP limiting layer 104 and p-GaP Window layer 105；The p-GaP Window layer
Ito thin film layer 106 is made on 105, n-electrode layer 201 is arranged in 100 other side of GaAs substrate；Ito thin film layer 106 does figure
Change processing, the p-GaP Window layer 105 of exposing are done roughening treatment, are made on ito thin film layer 106 and p-GaP Window layer 105
Metal electrode layer 107；Described 107 a part of metal electrode layer is connected in p-GaP Window layer 105, and it is thin that a part is connected to ITO
In film layer 106.107 a part of metal electrode layer as pad is connected in roughened p-GaP Window layer 105, a part
It is connected on ito thin film layer 106, avoids and cause ito thin film layer 106 to fall off in bonding wire test, while also improving entire
The adhesion and integrality of metal electrode layer 107, it is ensured that luminescent device stable operating voltage improves the bonding wire reliability of product.
Preferably, the 105 surface layer doping concentration of p-GaP Window layer is greater than body doping concentration, doped source Mg.
Preferably, the ito thin film layer 106 is indium tin oxide.
Preferably, the ito thin film layer 106 obtains lesser square in the case where meeting light transmittance with a thickness of 300nm
Resistance.
Preferably, the metal electrode layer 107 is selected from one of Cr, Pt, Ti, Al, Au or any combination above-mentioned.
Preferably, 201 material of n-electrode layer is selected from one of Ge, Au, Ni or any combination above-mentioned.
Compared with prior art, the beneficial effect that the utility model obtains is:
The firm LED chip of a kind of ITO provided by the utility model, is produced patterned using wet etching mode
Ito thin film layer, and then the roughening using GaP coarsening solution to the p-GaP Window layer progress controllable depth of leakage, simple process；?
Metal electrode layer, metal electrode layer are made using vapor deposition mode on patterned ito thin film layer and roughened p-GaP Window layer
It is connected simultaneously with ito thin film layer with roughened p-GaP Window layer, so as to avoid ito thin film is caused when bonding wire is tested
Layer falls off, while also improving the adhesion and integrality of entire metal electrode layer, it is ensured that luminescent device stable operating voltage mentions
The bonding wire reliability of high product greatly improves the quality and yield of product.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model.
Appended drawing reference: 100, GaAs substrate；101, buffer layer；102, n-AIGaInP limiting layer；103, MQW multiple quantum wells
Active layer；104, p-AIGaInP limiting layer；105, p-GaP Window layer；106, ito thin film layer；107, metal electrode layer；201,n
Electrode layer.
Specific embodiment
With reference to the accompanying drawing, embodiment is described in detail.
Referring to attached drawing 1, a kind of firm LED chip of ITO is included in 100 side of GaAs substrate and is successively arranged from the bottom up
Buffer layer 101, n-AIGaInP limiting layer 102, MQW multiple quantum well active layer 103, p-AIGaInP limiting layer 104 and p-GaP window
Mouth layer 105；Ito thin film layer 106 is made in the p-GaP Window layer 105, n-electrode layer is arranged in 100 other side of GaAs substrate
201；Ito thin film layer 106 does graphical treatment, and the p-GaP Window layer 105 of exposing does roughening treatment, in ito thin film layer 106
With production metal electrode layer 107 in p-GaP Window layer 105；Described 107 a part of metal electrode layer is connected to p-GaP Window layer
On 105, a part is connected on ito thin film layer 106.107 a part of metal electrode layer as pad is connected to roughened
In p-GaP Window layer 105, a part is connected on ito thin film layer 106, is avoided and is caused ito thin film layer in bonding wire test
106 fall off, while also improving the adhesion and integrality of entire metal electrode layer 107, it is ensured that luminescent device operating voltage is steady
It is fixed, improve the bonding wire reliability of product.
Further, the 105 surface layer doping concentration of p-GaP Window layer is greater than body doping concentration, doped source Mg.
Further, the ito thin film layer 106 is indium tin oxide.
Further, the ito thin film layer 106 obtains lesser side in the case where meeting light transmittance with a thickness of 300nm
Block resistance.
Further, the metal electrode layer 107 is selected from one of Cr, Pt, Ti, Al, Au or any combination above-mentioned.
Further, 201 material of n-electrode layer is selected from one of Ge, Au, Ni or any combination above-mentioned.
A kind of manufacturing method of the firm LED chip of ITO, including it is following.
(1) it makes LED epitaxial slice: setting gradually buffer layer 101, n- in the side of GaAs substrate 100
AIGaInP limiting layer 102, MQW multiple quantum well active layer 103, p-AIGaInP limiting layer 104 and p-GaP Window layer 105；
(2) ito thin film layer 106 is deposited in p-GaP Window layer 105；
(3) the p-GaP Window layer 105 of 106 contact layer graphical treatment of ito thin film layer, exposing does roughening treatment:
Figure is produced using photoresist on ito thin film layer 106, is produced in such a way that ITO corrosive liquid is using wet etching graphical
Ito thin film layer 106, recycle GaP coarsening solution 105 region of p-GaP Window layer of leakage is roughened；
(4) metal electrode layer 107 is made on patterned ito thin film layer 106 and p-GaP Window layer 105: using negtive photoresist
Alignment and vapor deposition mode make metal electrode layer 107, and a part is connected in p-GaP Window layer 105, and a part is connected to ITO
In film layer 106；
(5) n-electrode layer 201 is made in 100 another side of GaAs substrate, is fused in 420 DEG C of nitrogen atmosphere, with
Obtain n-electrode layer 201 and GaAs substrate 100 and form good Ohmic contact, at the same further enhance metal electrode layer 107 with
The adhesion of ito thin film layer 106 and the p-GaP Window layer 105 of roughening.
Listed above is only one of specific embodiment of the utility model.Obviously, the utility model is not limited to the above reality
Example is applied, it can also be there are many similar reshaping.Those skilled in the art can be direct from content disclosed by the utility model
All deformations for exporting or associating, are considered as the utility model scope of the claimed.
Claims (6)
1. a kind of firm LED chip of ITO, it is characterised in that: be included in GaAs substrate (100) side and be successively arranged from the bottom up
Buffer layer (101), n-AIGaInP limiting layer (102), MQW multiple quantum well active layer (103), p-AIGaInP limiting layer (104)
With p-GaP Window layer (105)；Ito thin film layer (106) are made on the p-GaP Window layer (105), the ito thin film layer
(106) graphical treatment is done, the p-GaP Window layer (105) of exposing is done roughening treatment, made on the ito thin film layer (106)
N-electrode layer (201) are arranged in metal electrode layer (107), GaAs substrate (100) other side；The metal electrode layer (107) one
Part is connected on p-GaP Window layer (105), and a part is connected on ito thin film layer (106).
2. a kind of firm LED chip of ITO as described in claim 1, it is characterised in that: p-GaP Window layer (105) table
Layer doping concentration is greater than body doping concentration, doped source Mg.
3. a kind of firm LED chip of ITO as described in claim 1, it is characterised in that: the ito thin film layer (106) is indium
Tin-oxide.
4. a kind of firm LED chip of ITO as described in claim 1, it is characterised in that: ito thin film layer (106) thickness
For 300nm.
5. a kind of firm LED chip of ITO as described in claim 1, it is characterised in that: metal electrode layer (107) choosing
From one of Cr, Pt, Ti, Al, Au or any combination above-mentioned.
6. a kind of firm LED chip of ITO as described in claim 1, it is characterised in that: n-electrode layer (201) the material choosing
From one of Ge, Au, Ni or any combination above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721809316.0U CN208580761U (en) | 2017-12-22 | 2017-12-22 | A kind of firm LED chip of ITO |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721809316.0U CN208580761U (en) | 2017-12-22 | 2017-12-22 | A kind of firm LED chip of ITO |
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| Publication Number | Publication Date |
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| CN208580761U true CN208580761U (en) | 2019-03-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108075022A (en) * | 2017-12-22 | 2018-05-25 | 南昌凯迅光电有限公司 | A kind of firm LED chip of ITO and its manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108075022A (en) * | 2017-12-22 | 2018-05-25 | 南昌凯迅光电有限公司 | A kind of firm LED chip of ITO and its manufacturing method |
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Address after: No.199, huangtang West Street, Airport Economic Zone, Nanchang City, Jiangxi Province, 330000 Patentee after: Nanchang Kaixun photoelectric Co.,Ltd. Address before: 330100 second floor, office building of small, medium and micro enterprise park, Linkong Economic Zone, Nanchang City, Jiangxi Province Patentee before: NANCHANG KAIXUN PHOTOELECTRIC Co.,Ltd. |
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