CN206040685U - Emitting diode with embedded transparent extended electrode structure - Google Patents
Emitting diode with embedded transparent extended electrode structure Download PDFInfo
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- CN206040685U CN206040685U CN201620931785.9U CN201620931785U CN206040685U CN 206040685 U CN206040685 U CN 206040685U CN 201620931785 U CN201620931785 U CN 201620931785U CN 206040685 U CN206040685 U CN 206040685U
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Abstract
The utility model discloses an emitting diode with embedded transparent extended electrode structure, the buffer layer that sets gradually on the gaAs substrate, the bragg reflection layer, N the alGaInP limiting layer, the MQW multi -quantum well active layer, P the alGaInP limiting layer, P gaP window layer, ITO electric current extension layer and alGaInP alligatoring layer, be equipped with the metal electrode layer on the alGaInP of patterning alligatoring layer, be equipped with the back electrode layer below the gaAs substrate, the metal electrode layer includes central electrode and extended electrode, wherein: the central electrode is connected on the alGaInP of patterning alligatoring layer, and the extended electrode embedding is in the alGaInP of patterning alligatoring layer to keep being connected with ITO electric current extension layer. Extended electrode self is because its damascene structure's characteristics, therefore stability is good to improve the adhesion and the integrality on whole metal electrode layer, ensured that emitting diode's operating voltage is stable, improved the bonding wire reliability and the luminous efficacy of product, greatly promoted the quality and the yield of product.
Description
Technical field
The utility model is related to semiconductor light-emitting-diode manufacturing technology field, more particularly, to a kind of with embedded
The light emitting diode of bright expansion electrode structure.
Background technology
Light emitting diode（LED）With advantages such as specular removal, low energy consumption, long-life, high security, high-environmentals, it is a kind of
There is the lighting system of broad prospect of application, paid attention to by more and more national, current LED is widely used to High Efficiency Solid-State photograph
In bright field, such as display screen, lamps for vehicle, backlight, traffic lights, Landscape Lighting etc..
As shown in figure 1, routine AlGaInP light emitting diodes are limited comprising GaAs substrates 100, cushion 101, n-AIGaInP
Preparative layer 102, MQW multiple quantum well active layers 103, p-AIGaInP limiting layers 104 and p-GaP Window layers 105, metal electrode layer 106
It is set directly in p-GaP Window layers 105,100 back side of GaAs substrates is provided with dorsum electrode layer 107.Due to conventional AlGaInP
The photosphere that goes out of light emitting diode is p-GaP Window layers 105, while p-GaP Window layers 105 also play ohm Window layer and electric current expands
The important function of exhibition, this will make electric current, and easily concentration is flow through from the underface region with electrode contact, i.e. area immediately below electrode
The current density in domain increases, it is impossible to electric current is sufficiently extended, so as to reduce the luminous efficiency of LED.Ito thin film compares p-
GaP Window layers 105 have good lateral current, while having transmitance height, good conductivity, wear-resistant, corrosion-resistant
The advantages of, and it is good with the adhesiveness of p-GaP Window layers 105, therefore, ito thin film is normally used for as raising AlGaInP base cores
The transparent electrode material of piece brightness.In actual applications, one layer of ito thin film, Ran Houzai is grown on p-GaP Window layers 105
Deposit metal electrodes layer 106, uses as bonding pad material, finds to be easy to ito thin film occur in the bonding wire test to pad
Come off, metal electrode layer 106 comes off abnormal problem, causes its pad performance and chip to be severely impacted using reliability,
In addition the stable chemical nature of GaP, it is difficult to good roughening effect is obtained using etching solution, LED chip brightness is also limit
Raising.
The content of the invention
The purpose of this utility model be provide it is a kind of be easy to produce, luminous efficiency is high, bonding wire reliability is high with embedding
Enter the light emitting diode of formula transparent expansion electrode structure.
What the purpose of this utility model was realized in：
A kind of light emitting diode with embedded transparent expansion electrode structure, including GaAs substrates, in GaAs substrates
The cushion that sets gradually above, Bragg reflecting layer, n-AlGaInP limiting layers, MQW multiple quantum well active layers, p-AlGaInP
Limiting layer, p-GaP Window layers, ITO current extendings and AlGaInP roughened layers, p-GaP Window layers are the p-GaP windows of patterning
Mouth layer, AlGaInP roughened layers are the AlGaInP roughened layers of patterning, are provided with metal electricity on the AlGaInP roughened layers of patterning
Pole layer, below GaAs substrates is provided with dorsum electrode layer, is characterized in that：The metal electrode layer includes main electrode and expansion electrode,
Wherein：Main electrode is connected on the AlGaInP roughened layers of patterning, and expansion electrode is embedded in the AlGaInP roughened layers of patterning
In, and keep being connected with ITO current extendings, the center of main electrode is with the centre of figure of the GaP Window layers of patterning same
On one center line.
The utility model is using the AlGaInP roughened layers for introducing Embedded ITO current extendings and patterning, and then adopts
The roughening of controllable depth is carried out to AlGaInP roughened layers with AlGaInP roughening solutions；Secondly in the AlGaInP roughening of patterning
Metal electrode layer is made using evaporation mode on layer, metal electrode layer includes main electrode and expansion electrode, wherein as pad
Main electrode is connected directly between on the AlGaInP roughened layers through being roughened, and causes ITO electric currents to expand when bonding wire is tested so as to avoid
Exhibition layer comes off, and on the other hand, expansion electrode is embedded in AlGaInP roughened layers, and keeps being connected with ITO current extendings,
Contact resistance being reduced, the effect of protection being also played simultaneously for main electrode, expansion electrode itself is because its damascene structures
The characteristics of, thus good stability, so as to improve the tack and integrality of whole metal electrode layer, it is ensured that light emitting diode
Stable operating voltage, improve the bonding wire reliability and luminous efficiency of product, greatly improve quality and the yield of product.
Description of the drawings
Fig. 1 is the structural representation of existing conventional AlGaInP light emitting diodes；
Fig. 2 is structural representation of the present utility model.
Specific embodiment
With reference to embodiment and compare accompanying drawing the utility model is described in further detail.
A kind of light emitting diode with embedded transparent expansion electrode structure, including GaAs substrates, in GaAs substrates 100
Above the cushion 101 that sets gradually, Bragg reflecting layer 102, n-AlGaInP limiting layers 103, MQW MQWs it is active
Layer 104, p-AlGaInP limiting layers 105, p-GaP Window layers 106, ITO current extendings 107 and AlGaInP roughened layers 108, p-
P-GaP Window layer of the GaP Window layers 106 for patterning, AlGaInP roughened layer of the AlGaInP roughened layers 108 for patterning,
The AlGaInP roughened layers 108 of patterning are provided with metal electrode layer, below GaAs substrates 100 are provided with dorsum electrode layer 201,
The metal electrode layer includes main electrode 109 and expansion electrode 110, wherein：Main electrode 109 is connected to the AlGaInP of patterning
On roughened layer 108, expansion electrode 110 is embedded in the AlGaInP roughened layers 108 of patterning, and with ITO current extendings
107 keep connection, and the center of main electrode is with the centre of figure of the GaP Window layers of patterning on same center line.
Claims (1)
1. a kind of light emitting diode with embedded transparent expansion electrode structure, including GaAs substrates, in the upper of GaAs substrates
Cushion that face sets gradually, Bragg reflecting layer, n-AlGaInP limiting layers, MQW multiple quantum well active layers, p-AlGaInP limits
Preparative layer, p-GaP Window layers, ITO current extendings and AlGaInP roughened layers, p-GaP Window layers are the p-GaP windows of patterning
Layer, AlGaInP roughened layers are the AlGaInP roughened layers of patterning, on the AlGaInP roughened layers of patterning are provided with metal electrode
Layer, is provided with dorsum electrode layer below GaAs substrates, it is characterised in that：The metal electrode layer includes main electrode and extension electricity
Pole, wherein：Main electrode is connected on the AlGaInP roughened layers of patterning, and expansion electrode is embedded in the AlGaInP roughening of patterning
In layer, and keep being connected with ITO current extendings, center and the centre of figure of the GaP Window layers of patterning of main electrode exist
On same center line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620931785.9U CN206040685U (en) | 2016-08-24 | 2016-08-24 | Emitting diode with embedded transparent extended electrode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620931785.9U CN206040685U (en) | 2016-08-24 | 2016-08-24 | Emitting diode with embedded transparent extended electrode structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206040685U true CN206040685U (en) | 2017-03-22 |
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| CN201620931785.9U Active CN206040685U (en) | 2016-08-24 | 2016-08-24 | Emitting diode with embedded transparent extended electrode structure |
Country Status (1)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129211A (en) * | 2016-08-24 | 2016-11-16 | 南昌凯迅光电有限公司 | There is light emitting diode of embedded transparent expansion electrode structure and preparation method thereof |
-
2016
- 2016-08-24 CN CN201620931785.9U patent/CN206040685U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129211A (en) * | 2016-08-24 | 2016-11-16 | 南昌凯迅光电有限公司 | There is light emitting diode of embedded transparent expansion electrode structure and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No.199, huangtang West Street, Airport Economic Zone, Nanchang City, Jiangxi Province, 330000 Patentee after: Nanchang Kaixun photoelectric Co.,Ltd. Address before: 330038 3-1-1102, Central West District, liantai Xiangyu, No. 999, Yiyuan Road, Honggutan new area, Nanchang City, Jiangxi Province Patentee before: NANCHANG KAIXUN PHOTOELECTRIC Co.,Ltd. |
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| CP03 | Change of name, title or address |