CN206040684U - LED chip of ITO thin film composition - Google Patents
LED chip of ITO thin film composition Download PDFInfo
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- CN206040684U CN206040684U CN201620925919.6U CN201620925919U CN206040684U CN 206040684 U CN206040684 U CN 206040684U CN 201620925919 U CN201620925919 U CN 201620925919U CN 206040684 U CN206040684 U CN 206040684U
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- layer
- algainp
- ito thin
- patterning
- thin film
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Abstract
The utility model discloses a LED chip of ITO thin film composition, including the gaAs substrate, be equipped with the buffer layer in proper order on the gaAs substrate, N the alGaInP limiting layer, the MQW multi -quantum well active layer, P the alGaInP limiting layer, P gaP window layer and alGaInP alligatoring layer, be equipped with the ITO thin layer on the alGaInP of patterning alligatoring layer, be equipped with the ITO film contact layer of patterning on the ITO thin layer, contacting the layer, the ITO of patterning film be equipped with the metal electrode layer on, be equipped with the back electrode layer below the gaAs substrate, its characterized in that: the metal electrode layer includes central electrode and extended electrode, wherein: the central electrode is connected on the alGaInP of patterning alligatoring layer, and extended electrode connects on the ITO thin layer. The utility model provides the high adhesion and the integrality on whole metal electrode layer has ensured that emitting diode's operating voltage is stable, has improved the bonding wire reliability and the luminous efficacy of product, has greatly promoted the quality and the yield of product.
Description
Technical field
This utility model is related to semiconductor light-emitting-diode field, more particularly, to a kind of LED core of ito thin film structure
Piece.
Background technology
Light emitting diode（LED）With advantages such as specular removal, low energy consumption, long-life, high security, high-environmentals, it is a kind of
There is the lighting system of broad prospect of application, paid attention to by more and more national, current LED is widely used to High Efficiency Solid-State photograph
In bright field, such as display screen, lamps for vehicle, backlight, traffic light, Landscape Lighting etc..
As shown in figure 1, routine AlGaInP light emitting diodes are limited comprising GaAs substrates 100, cushion 101, n-AIGaInP
Preparative layer 102, MQW multiple quantum well active layers 103, p-AIGaInP limiting layers 104 and p-GaP Window layer 105, metal electrode layer 106
It is set directly in p-GaP Window layer 105,100 back side of GaAs substrates is provided with dorsum electrode layer 107.Due to conventional AlGaInP
The photosphere that goes out of light emitting diode is p-GaP Window layer 105, while p-GaP Window layer 105 also plays ohmic contact layer and electric current expands
The important function of exhibition, this will make electric current, and easily concentration is flow through from the underface region with electrode contact, i.e. area immediately below electrode
The electric current density in domain increases, it is impossible to electric current is sufficiently extended, so as to reduce the luminous efficiency of LED.Ito thin film compares p-
GaP Window layer 105 has good lateral current, while having transmitance height, good conductivity, wear-resistant, corrosion-resistant
The advantages of, and it is good with the adhesiveness of p-GaP Window layer 105, therefore, ito thin film is normally used for as raising AlGaInP base cores
The transparent electrode material of piece brightness.In actual applications, one layer of ito thin film, Ran Houzai is grown on p-GaP Window layer 105
Deposit metal electrodes layer 106, uses as bonding pad material, finds to be easy to ito thin film occur in the bonding wire test to pad
Come off, metal electrode layer 106 comes off abnormal problem, causes its pad performance and chip to be severely impacted using reliability.
The content of the invention
The purpose of this utility model is to provide a kind of ito thin film be easy to and produce, luminous efficiency is high, bonding wire reliability is high
The LED chip of structure.
What the purpose of this utility model was realized in：
A kind of LED chip of ito thin film structure, including GaAs substrates, be sequentially provided with above GaAs substrates cushion,
N-AlGaInP limiting layers, MQW multiple quantum well active layers, p-AlGaInP limiting layers, p-GaP Window layer and AlGaInP roughened layers,
AlGaInP roughened layers are the AlGaInP roughened layers of patterning, on the AlGaInP roughened layers of patterning are provided with ito thin film layer,
The ito thin film contact layer of patterning is provided with ito thin film layer, on the ito thin film contact layer of patterning is provided with metal electrode
Layer, below GaAs substrates is provided with dorsum electrode layer, is characterized in that：The metal electrode layer includes main electrode and expansion electrode, its
In：Main electrode is connected on the AlGaInP roughened layers of patterning, and expansion electrode is connected on ito thin film layer.
This utility model is using the AlGaInP roughened layers for introducing patterning, and then adopts AlGaInP roughening solutions pair
AlGaInP roughened layers carry out the roughening of controllable depth；Secondly made using evaporation mode on the ito thin film contact layer of patterning
Metal electrode layer, metal electrode layer include main electrode and expansion electrode, wherein the main electrode as pad be connected directly between through
On the AlGaInP roughened layers of roughening, ito thin film layer is caused to come off when bonding wire is tested so as to avoid, on the other hand, extension electricity
Pole layer is connected on ito thin film layer, and expansion electrode serves the effect for reducing contact voltage, and this is anti-for main electrode is also played
The effect of shield, while the characteristics of expansion electrode itself is because of its damascene structures, thus good stability, so as to improve whole gold
The tack of category electrode layer and integrity, it is ensured that the stable operating voltage of light emitting diode, improve the bonding wire reliability of product
Property and luminous efficiency, greatly improve quality and the yield of product.
Description of the drawings
Fig. 1 is the structural representation of existing conventional AlGaInP light emitting diodes；
Fig. 2 is structural representation of the present utility model.
Specific embodiment
With reference to embodiment and compare accompanying drawing this utility model is described in further detail.
A kind of LED chip of ito thin film structure, including GaAs substrates 100, is sequentially provided with above GaAs substrates 100
Cushion 101, n-AlGaInP limiting layers 102, MQW multiple quantum well active layers 103, p-AlGaInP limiting layers 104, p-GaP windows
Mouth layer 105 and AlGaInP roughened layers 106, AlGaInP roughened layer of the AlGaInP roughened layers 106 for patterning, in patterning
AlGaInP roughened layers 106 are provided with ito thin film layer 107, are provided with the ito thin film contact layer of patterning on ito thin film layer 107,
Metal electrode layer 108 is provided with the ito thin film contact layer of patterning, dorsum electrode layer is provided with below GaAs substrates 100
201, the metal electrode layer 108 includes main electrode and expansion electrode, wherein：The AlGaInP that main electrode is connected to patterning is thick
Change on layer 106, expansion electrode is connected on ito thin film layer 107.
Claims (1)
1. a kind of LED chip of ito thin film structure, including GaAs substrates, is sequentially provided with cushion, n- above GaAs substrates
AlGaInP limiting layers, MQW multiple quantum well active layers, p-AlGaInP limiting layers, p-GaP Window layer and AlGaInP roughened layers,
AlGaInP roughened layers are the AlGaInP roughened layers of patterning, on the AlGaInP roughened layers of patterning are provided with ito thin film layer,
The ito thin film contact layer of patterning is provided with ito thin film layer, on the ito thin film contact layer of patterning is provided with metal electrode
Layer, is provided with dorsum electrode layer below GaAs substrates, it is characterised in that：The metal electrode layer includes main electrode and extension electricity
Pole, wherein：Main electrode is connected on the AlGaInP roughened layers of patterning, and expansion electrode is connected on ito thin film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620925919.6U CN206040684U (en) | 2016-08-24 | 2016-08-24 | LED chip of ITO thin film composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620925919.6U CN206040684U (en) | 2016-08-24 | 2016-08-24 | LED chip of ITO thin film composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206040684U true CN206040684U (en) | 2017-03-22 |
Family
ID=58304910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620925919.6U Expired - Fee Related CN206040684U (en) | 2016-08-24 | 2016-08-24 | LED chip of ITO thin film composition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206040684U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129205A (en) * | 2016-08-24 | 2016-11-16 | 南昌凯迅光电有限公司 | A kind of LED chip of ito thin film structure and preparation method thereof |
-
2016
- 2016-08-24 CN CN201620925919.6U patent/CN206040684U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129205A (en) * | 2016-08-24 | 2016-11-16 | 南昌凯迅光电有限公司 | A kind of LED chip of ito thin film structure and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170322 Termination date: 20190824 |