CN208444807U - 等离子体刻蚀机 - Google Patents
等离子体刻蚀机 Download PDFInfo
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- CN208444807U CN208444807U CN201821227670.7U CN201821227670U CN208444807U CN 208444807 U CN208444807 U CN 208444807U CN 201821227670 U CN201821227670 U CN 201821227670U CN 208444807 U CN208444807 U CN 208444807U
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 30
- 230000000149 penetrating effect Effects 0.000 claims abstract 2
- 230000000694 effects Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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CN201821227670.7U CN208444807U (zh) | 2018-08-01 | 2018-08-01 | 等离子体刻蚀机 |
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CN201821227670.7U CN208444807U (zh) | 2018-08-01 | 2018-08-01 | 等离子体刻蚀机 |
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CN208444807U true CN208444807U (zh) | 2019-01-29 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109148316A (zh) * | 2018-09-07 | 2019-01-04 | 北京智芯微电子科技有限公司 | 用于精确判定等离子体刻蚀机刻蚀芯片终点的监测方法 |
CN115128788A (zh) * | 2022-05-30 | 2022-09-30 | 中国人民解放军国防科技大学 | 与观测物平行的水平放置显微装置 |
-
2018
- 2018-08-01 CN CN201821227670.7U patent/CN208444807U/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109148316A (zh) * | 2018-09-07 | 2019-01-04 | 北京智芯微电子科技有限公司 | 用于精确判定等离子体刻蚀机刻蚀芯片终点的监测方法 |
CN115128788A (zh) * | 2022-05-30 | 2022-09-30 | 中国人民解放军国防科技大学 | 与观测物平行的水平放置显微装置 |
CN115128788B (zh) * | 2022-05-30 | 2023-11-28 | 中国人民解放军国防科技大学 | 与观测物平行的水平放置显微装置 |
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Effective date of registration: 20201230 Address after: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Patentee after: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee after: Beijing core Kejian Technology Co.,Ltd. Patentee after: STATE GRID INFORMATION A TELECOMMUNICATION GROUP Co.,Ltd. Address before: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Patentee before: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: STATE GRID INFORMATION A TELECOMMUNICATION GROUP Co.,Ltd. |