CN208223703U - A kind of sputtered thin film pressure transducer - Google Patents
A kind of sputtered thin film pressure transducer Download PDFInfo
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- CN208223703U CN208223703U CN201820360863.3U CN201820360863U CN208223703U CN 208223703 U CN208223703 U CN 208223703U CN 201820360863 U CN201820360863 U CN 201820360863U CN 208223703 U CN208223703 U CN 208223703U
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- thin film
- main body
- sensor main
- film pressure
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Abstract
The utility model discloses a kind of sputtered thin film pressure transducers, including sensor main body and pedestal, two side external surfaces of the sensor main body are fixedly installed with rubber bumps, position on the outside of one end of the sensor main body close to rubber bumps is fixedly installed with wire collecting cylinder, and the pedestal is located at the lower end outside of sensor main body.A kind of sputtered thin film pressure transducer described in the utility model, equipped with rubber bumps, stainless steel membrane chip architecture and sputtering alloy thin film pressure sensing element, rubber product is wear-resisting, damping, play the role of protecting sensor external, prevent friction and collision, and it is made of alloy film material, sensitivity when contact is high, internal resistance can bear 2,000 times or more fatigue processing simultaneously, the sputtering alloy firm heat resistance on its surface is excellent, can under various severe gesture environment prolonged steady operation, it is applicable in different operating situation, bring better prospect of the application.
Description
Technical field
The utility model relates to art of pressure sensors, in particular to a kind of sputtered thin film pressure transducer.
Background technique
Pressure sensor is to experience pressure signal, and can be converted into pressure signal according to certain rule available defeated
The device or device of electric signal out, by different test pressure types, pressure sensor can be divided into gauge pressure transducer, differential pressure passes
Sensor and absolute pressure sensor；There are certain drawbacks in existing pressure sensor, measuring accuracy is by temperature when use when in use
Limitation is very big, and pressure-sensing device is easy the variation because of temperature and performance changes, cannot be under various severe gesture environment
Steady operation, while the welding gimmick and anti-seismic performance in outside have to be reinforced, it is certain unfavorable to bring in use
It influences, for this purpose, it is proposed that a kind of sputtered thin film pressure transducer.
Utility model content
The main purpose of the utility model is to provide a kind of sputtered thin film pressure transducers, can effectively solve background skill
The problems in art.
To achieve the above object, the technical solution that the utility model is taken are as follows: a kind of sputtered thin film pressure transducer, including
Sensor main body and pedestal, two side external surfaces of the sensor main body are fixedly installed with rubber bumps, the sensor master
Position on the outside of one end of body close to rubber bumps is fixedly installed with wire collecting cylinder, and the pedestal is located at outside the lower end of sensor main body
The upper end outer surface of side, the sensor main body is equipped with stainless steel membrane chip architecture, the upper end appearance of the stainless steel membrane chip architecture
Face is fixedly installed with pipe screw thread, and the inside of the stainless steel membrane chip architecture is equipped with strain diaphragm and elastomer, and strain diaphragm is solid
Dingan County is on the outside of the upper end of elastomer, and the inside of the elastomer, which is fixedly mounted, to have elastic component, the lower end of the elastomer
Inner surface is equipped with electrostrictive strain resistance layer close to the lower section of elastic element, and the bosom position of the sensor main body is fixedly installed with
Alloy thin film pressure sensing element is sputtered, the upper end outer surface of the sputtering alloy thin film pressure sensing element is close to stainless steel membrane
The lower section of chip architecture is equipped with sputtering alloy firm, and the lower end outer surface of the sputtering alloy thin film pressure sensing element is equipped with pressure
Interface, the lower end outside that the inside of the pressure interface passes through pressure interface are equipped with spun gold lead, the lower end of the spun gold lead
Outside is fixedly installed with magnification circuit plate, and lead pinboard, the lead pinboard are equipped on the outside of one end of magnification circuit plate
Signal lead-out wire is movably installed between wire collecting cylinder, inner surface one week of the sensor main body is fixedly installed with sealing ring.
Preferably, the outer surface of the sensor main body and pedestal is coated with waterproof layer, the sensor main body and pedestal
Between be provided with colloid adhering layer.
Preferably, the internal diameter of the wire collecting cylinder is 12 millimeters, and the quantity of the elastic element is ten groups.
Preferably, the sputtering alloy thin film pressure sensing element is electrically connected by spun gold lead and magnification circuit plate,
The quantity of the rubber bumps is several groups.
Preferably, the temperature resistant range of the sputtering alloy thin film pressure sensing element is -10 degree to 120 degree, the line concentration
Cylinder is internally provided with wiring contact pin.
Preferably, the electrostrictive strain resistance layer is internally provided with interior compensation resistance, and the outer surface of the magnification circuit plate sets
It is equipped with signal processing unit.
Compared with prior art, the utility model has the following beneficial effects: the sputtered thin film pressure transducer, by setting
Set rubber bumps, rubber product is wear-resisting, damping, plays the role of protecting sensor external, prevents friction and collision, pass through
Stainless steel membrane chip architecture is set, is made of alloy film material, sensitivity when contact is high, while internal resistance can be born
2000 times or more fatigue processing, sputter alloy thin film pressure sensing element by setting, the sputtering alloy firm on surface is resistance to
Temperature is had excellent performance, can under various severe gesture environment prolonged steady operation, whole device is simple, easy to operate, uses
Effect it is more preferable relative to traditional approach.
Detailed description of the invention
Fig. 1 is a kind of overall structure diagram of sputtered thin film pressure transducer of the utility model.
Fig. 2 is a kind of partial view of sputtered thin film pressure transducer of the utility model.
Fig. 3 is the interior views of A in a kind of sputtered thin film pressure transducer Fig. 2 of the utility model.
Fig. 4 is a kind of interior views of sputtered thin film pressure transducer sensor main body of the utility model.
In figure: 1, sensor main body；2, rubber bumps；3, wire collecting cylinder；4, pedestal；5, stainless steel membrane chip architecture；6, pipe spiral shell
Line；7, strain diaphragm；8, elastomer；9, elastic element；10, electrostrictive strain resistance layer；11, alloy thin film pressure sensing element is sputtered；
12, alloy firm is sputtered；13, pressure interface；14, spun gold lead；15, magnification circuit plate；16, lead pinboard；17, signal draws
Outlet；18, sealing ring.
Specific embodiment
To be easy to understand the technical means, creative features, achievement of purpose, and effectiveness of the utility model, below
In conjunction with specific embodiment, the utility model is further described.
As shown in Figs 1-4, a kind of sputtered thin film pressure transducer, including sensor main body 1 and pedestal 4, sensor main body 1
Two side external surfaces be fixedly installed with rubber bumps 2, rubber product is wear-resisting, damping, play the role of protecting sensor external,
Preventing friction and collision, the position of close rubber bumps 2 is fixedly installed with wire collecting cylinder 3 on the outside of one end of sensor main body 1,
Pedestal 4 is located at the lower end outside of sensor main body 1, and the upper end outer surface of sensor main body 1 is equipped with stainless steel membrane chip architecture 5, adopts
It being made of alloy film material, sensitivity when contact is high, while internal resistance can bear 2,000 times or more fatigue processing,
The upper end outer surface of stainless steel membrane chip architecture 5 is fixedly installed with pipe screw thread 6, and the inside of stainless steel membrane chip architecture 5 is equipped with strain films
Piece 7 and elastomer 8, and strain diaphragm 7 is fixedly mounted on the outside of the upper end of elastomer 8, the inside of elastomer 8 is fixedly installed with bullet
Property element 9, the lower end inner surface of elastomer 8 is equipped with electrostrictive strain resistance layer 10 close to the lower section of elastic element 9, sensor main body 1
Bosom position is fixedly installed with sputtering alloy thin film pressure sensing element 11, sputtering alloy thin film pressure sensing element 11
Upper end outer surface is equipped with sputtering alloy firm 12, the sensitive member of sputtering alloy thin film pressure close to the lower section of stainless steel membrane chip architecture 5
The lower end outer surface of part 11 is equipped with pressure interface 13, and the lower end outside that the inside of pressure interface 13 passes through pressure interface 13 is equipped with gold
Silk lead 14, the lower end outside of spun gold lead 14 are fixedly installed with magnification circuit plate 15, and on the outside of one end of magnification circuit plate 15
Equipped with lead pinboard 16, signal lead-out wire 17, sensor main body 1 are movably installed between lead pinboard 16 and wire collecting cylinder 3
Be fixedly installed with sealing ring 18 within inner surface one week.
The outer surface of sensor main body 1 and pedestal 4 is coated with waterproof layer, is provided with glue between sensor main body 1 and pedestal 4
Body adhering layer；The internal diameter of wire collecting cylinder 3 is 12 millimeters, and the quantity of elastic element 9 is ten groups；Sputter the sensitive member of alloy thin film pressure
Part 11 is electrically connected by spun gold lead 14 and magnification circuit plate 15, and the quantity of rubber bumps 2 is several groups；Sputter alloy firm
The temperature resistant range of pressure-sensing device 11 is -10 degree to 120 degree, and wire collecting cylinder 3 is internally provided with wiring contact pin；Electrostrictive strain resistance layer
10 are internally provided with interior compensation resistance, and the outer surface of magnification circuit plate 15 is provided with signal processing unit.
It should be noted that the utility model is a kind of sputtered thin film pressure transducer, when in use, mainly by sensor
Main body 1 and 4 two large divisions of pedestal form, and pedestal 4 plays the role of support, and the rubber bumps 2 of two sides play outside protection sensor
The effect in portion prevents friction and collision, and when work, pressure medium is directly acted in stainless steel membrane chip architecture 5, stainless
Strain diaphragm 7 built in steel membrane chip architecture 5 and elastomer 8, strain diaphragm 7 receive a pressure, and deformation occurs, squeeze elastomer 8
Inside elastic element 9, the resistance in electrostrictive strain resistance layer 10 combines together with elastomer 8, while sputtering alloy thin film pressure
Sputtering alloy firm 12 on sensing element 11 is also under pressure, and deformation occurs, and the two collective effect changes and flows through its surface
The size of values of circuit resistances, is then exported the electric current by spun gold lead 14, is converted into electric signal by magnification circuit plate 15,
And signal is carried out when amplification, it by 16 transit line of lead pinboard, is drawn by signal lead-out wire 17, by wire collecting cylinder 3 and outside
The electronic instrument in portion is connected, more practical.
The basic principles and main features of the present invention and the advantages of the present invention have been shown and described above.Current row
The technical staff of industry is described in above embodiments and description it should be appreciated that the present utility model is not limited to the above embodiments
Only illustrate the principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, the utility model is also
It will have various changes and improvements, these various changes and improvements fall within the scope of the claimed invention.The utility model
Claimed range is defined by the appending claims and its equivalent thereof.
Claims (6)
1. a kind of sputtered thin film pressure transducer, including sensor main body (1) and pedestal (4), it is characterised in that: the sensor
Two side external surfaces of main body (1) are fixedly installed with rubber bumps (2), close to rubber on the outside of one end of the sensor main body (1)
The position of glue protrusion (2) is fixedly installed with wire collecting cylinder (3), and the pedestal (4) is located at the lower end outside of sensor main body (1), institute
The upper end outer surface for stating sensor main body (1) is equipped with stainless steel membrane chip architecture (5), the upper end of the stainless steel membrane chip architecture (5)
Outer surface is fixedly installed with pipe screw thread (6), and the inside of the stainless steel membrane chip architecture (5) is equipped with strain diaphragm (7) and elastomer
(8), and strain diaphragm (7) is fixedly mounted on the outside of the upper end of elastomer (8), and the inside of the elastomer (8) is fixedly installed with
The lower end inner surface of elastic element (9), the elastomer (8) is equipped with electrostrictive strain resistance layer (10) close to the lower section of elastic element (9),
The bosom position of the sensor main body (1) is fixedly installed with sputtering alloy thin film pressure sensing element (11), described to splash
The upper end outer surface for penetrating alloy thin film pressure sensing element (11) is equipped with sputtering alloy close to the lower section of stainless steel membrane chip architecture (5)
The lower end outer surface of film (12), sputtering alloy thin film pressure sensing element (11) is equipped with pressure interface (13), the pressure
The lower end outside that the inside of power interface (13) passes through pressure interface (13) is equipped with spun gold lead (14), the spun gold lead (14)
Lower end outside is fixedly installed with magnification circuit plate (15), and lead pinboard is equipped on the outside of one end of magnification circuit plate (15)
(16), signal lead-out wire (17), the sensor main body are movably installed between the lead pinboard (16) and wire collecting cylinder (3)
(1) inner surface one week is fixedly installed with sealing ring (18).
2. a kind of sputtered thin film pressure transducer according to claim 1, it is characterised in that: the sensor main body (1)
It is coated with waterproof layer with the outer surface of pedestal (4), is provided with colloid adhering layer between the sensor main body (1) and pedestal (4).
3. a kind of sputtered thin film pressure transducer according to claim 1, it is characterised in that: the wire collecting cylinder (3) it is interior
Diameter is 12 millimeters, and the quantity of the elastic element (9) is ten groups.
4. a kind of sputtered thin film pressure transducer according to claim 1, it is characterised in that: the sputtering alloy firm pressure
Force sensitive element (11) is electrically connected by spun gold lead (14) and magnification circuit plate (15), the quantity of the rubber bumps (2)
For several groups.
5. a kind of sputtered thin film pressure transducer according to claim 1, it is characterised in that: the sputtering alloy firm pressure
The temperature resistant range of force sensitive element (11) is -10 degree to 120 degree, and the wire collecting cylinder (3) is internally provided with wiring contact pin.
6. a kind of sputtered thin film pressure transducer according to claim 1, it is characterised in that: the electrostrictive strain resistance layer (10)
Be internally provided with interior compensation resistance, the outer surface of the magnification circuit plate (15) is provided with signal processing unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820360863.3U CN208223703U (en) | 2018-03-16 | 2018-03-16 | A kind of sputtered thin film pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820360863.3U CN208223703U (en) | 2018-03-16 | 2018-03-16 | A kind of sputtered thin film pressure transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208223703U true CN208223703U (en) | 2018-12-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820360863.3U Active CN208223703U (en) | 2018-03-16 | 2018-03-16 | A kind of sputtered thin film pressure transducer |
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| CN (1) | CN208223703U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111308301A (en) * | 2019-12-05 | 2020-06-19 | 王东 | Semiconductor performance testing method based on Internet of things |
-
2018
- 2018-03-16 CN CN201820360863.3U patent/CN208223703U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111308301A (en) * | 2019-12-05 | 2020-06-19 | 王东 | Semiconductor performance testing method based on Internet of things |
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