CN208208758U - 一种SiGe材料CMOS器件 - Google Patents
一种SiGe材料CMOS器件 Download PDFInfo
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- CN208208758U CN208208758U CN201721641497.0U CN201721641497U CN208208758U CN 208208758 U CN208208758 U CN 208208758U CN 201721641497 U CN201721641497 U CN 201721641497U CN 208208758 U CN208208758 U CN 208208758U
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
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CN201721641497.0U CN208208758U (zh) | 2017-11-30 | 2017-11-30 | 一种SiGe材料CMOS器件 |
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CN201721641497.0U CN208208758U (zh) | 2017-11-30 | 2017-11-30 | 一种SiGe材料CMOS器件 |
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CN208208758U true CN208208758U (zh) | 2018-12-07 |
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CN201721641497.0U Expired - Fee Related CN208208758U (zh) | 2017-11-30 | 2017-11-30 | 一种SiGe材料CMOS器件 |
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GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20200927 Address after: Room 109, room 70102, gazelle Valley podium building, No. 69, Jinye Road, hi tech Zone, Xi'an City, Shaanxi Province Patentee after: Xi'an Jingjiang Huahe Electronic Technology Co., Ltd Address before: 710065 No. 86 Leading Times Square (Block B), No. 2, Building No. 1, Unit 22, Room 12202, No. 51, High-tech Road, Xi'an High-tech Zone, Shaanxi Province Patentee before: Xi'an Cresun Innovation Technology Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181207 Termination date: 20201130 |
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CF01 | Termination of patent right due to non-payment of annual fee |