CN208157401U - A kind of IGBT half-bridge module structure - Google Patents
A kind of IGBT half-bridge module structure Download PDFInfo
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- CN208157401U CN208157401U CN201820785462.2U CN201820785462U CN208157401U CN 208157401 U CN208157401 U CN 208157401U CN 201820785462 U CN201820785462 U CN 201820785462U CN 208157401 U CN208157401 U CN 208157401U
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- right wing
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- signal terminal
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- igbt
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The utility model relates to a kind of IGBT half-bridge module structures, left DBC is equipped with left igbt chip and left FRD chip, left igbt chip and left FRD chip are welded on the upper end left DBC by tin cream, left igbt chip leads to the pole left G signal terminal, and left FRD chip leads to the pole left E signal terminal；Right wing DBC is equipped with right wing igbt chip and right wing FRD chip, right wing igbt chip and right wing FRD chip are welded on the upper end right wing DBC by tin cream, right wing igbt chip is connect with right wing FRD chip, and right wing igbt chip leads to right wing G pole signal terminal and the pole right wing E signal terminal.The utility model abandons single copper conductor welding scheme, using bonding routing connection, reduces production difficulty, improves production efficiency, improve product current carrying capacity, enhance product long term reliability.
Description
Technical field
The utility model relates to a kind of IGBT half-bridge module structures, belong to high power semi-conductor technical field.
Background technique
IGBT half-bridge module is to pass through spy by IGBT (insulated gate bipolar transistor chip) and FRD (fast recovery diode)
Modularized semiconductor product made of fixed circuit bridge encapsulation；IGBT module after encapsulation directly applies to frequency converter, UPS not
In the equipment such as uninterruptible power.Currently, being designed inside general 34MMIGBT half-bridge module using mutually isostructural DBC, such product
Since DBC structure is limited, DBC need to be connect with lead terminal using 4 single copper conductors, complex process, production efficiency is low, right
Operator is more demanding, and gone out product current carrying capacity is weak, and long-term reliability is low.
Utility model content
The utility model leads to IGBT half in view of the deficienciess of the prior art, provide a kind of IGBT half-bridge module structure
Two pieces of DBC structures carry out differentiation design inside bridge module, abandon single copper conductor welding scheme, are connected using bonding routing,
Production difficulty is reduced, production efficiency is improved, improves product current carrying capacity, enhancing product is used for a long time reliable
Property.
The technical solution that the utility model solves above-mentioned technical problem is as follows：A kind of IGBT half-bridge module structure, it is described
IGBT half-bridge module includes substrate, and substrate is equipped with copper clad layers, and the substrate is formed with left DBC and right wing DBC, the left
DBC is equipped with left igbt chip and left FRD chip, and the left igbt chip and left FRD chip are welded by tin cream
In the upper end the left DBC, left igbt chip leads to the pole left G signal terminal, and left FRD chip leads to the pole left E
Signal terminal；The right wing DBC is equipped with right wing igbt chip and right wing FRD chip, the right wing igbt chip and right wing FRD
Chip is welded on the upper end the right wing DBC by tin cream, and right wing igbt chip is connect with the right wing FRD chip, right wing IGBT
Chip leads to right wing G pole signal terminal and the pole right wing E signal terminal；The pole left G signal terminal, the pole left E signal end
Son, right wing G pole signal terminal and the pole right wing E signal terminal pass through tin cream respectively and are welded on the side the right wing DBC.
A kind of IGBT half-bridge module structure as described above, left G pole signal terminal is from the left igbt chip
Upside is drawn, and is connected between left G pole signal terminal and left igbt chip by aluminium wire.Aluminium wire is using common thick in the market
Aluminium wire welds (line footpath 100UM-500UM), guides to the side right wing DBC by ultrasonic bond mode.
A kind of IGBT half-bridge module structure as described above, left E pole signal terminal is under the left FRD chip
Side is drawn, and is connected between left E pole signal terminal and left FRD chip by aluminium wire.Aluminium wire use herein is commonly used in the market
Crude aluminum wire bond (line footpath 100UM-500UM), the side right wing DBC is guided to by ultrasonic bond mode.Left G pole signal terminal and
Left E pole signal terminal is drawn from left DBC upper and lower sides from different directions respectively, left G pole signal terminal and the pole left E letter
Number terminal is disposed in parallel in the side right wing DBC, and structure partial is reasonable.
A kind of IGBT half-bridge module structure as described above, right wing G pole signal terminal is from the right wing igbt chip
Downside is drawn, and is connected between right wing G pole signal terminal and right wing igbt chip by aluminium wire.Aluminium wire use herein is commonly used in the market
Crude aluminum wire bond (line footpath 100UM-500UM), the side right wing DBC is guided to by ultrasonic bond mode.
A kind of IGBT half-bridge module structure as described above, right wing E pole signal terminal is from the right wing igbt chip
Downside is drawn, and is connected between right wing E pole signal terminal and right wing igbt chip by aluminium wire.Aluminium wire use herein is commonly used in the market
Crude aluminum wire bond (line footpath 100UM-500UM), the side right wing DBC is guided to by ultrasonic bond mode.
A kind of IGBT half-bridge module structure as described above, left G pole signal terminal and the pole left E signal terminal position
In the upside of the right wing DBC, right wing G pole signal terminal and right wing E pole signal terminal are located under the right wing DBC
Side.
A kind of IGBT half-bridge module structure as described above, the left DBC and right wing DBC use unsymmetric structure, institute
Stating left G pole signal terminal and the pole left E signal terminal interval has aluminium oxide ceramics, right wing G pole signal terminal and right wing E
There is aluminium oxide ceramics at pole signal terminal interval.
The utility model has the beneficial effects that：The production efficiency of IGBT half-bridge module can be improved, promote effect and reach 60%
More than；Traditional mode of production process section can be made to eliminate one step from the process, reduce cost of labor, reduce production difficulty；The pole G of left and right two-way and E
Electrode current passes through the conduction of the front DBC copper clad layers, and current carrying capacity is stronger, and loss current is smaller；Abandoning tradition conducting wire spot welding
Mode skill is connect, conducts electric current by the front DBC copper clad layers, long-term reliability is higher.
Detailed description of the invention
Fig. 1 is IGBT half-bridge module left DBC and right wing DBC structural schematic diagram；
Fig. 2 is IGBT half-bridge module structural schematic diagram.
Specific embodiment
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, with reference to the accompanying drawing to this
The specific embodiment of utility model is described in detail.Many details are explained in the following description in order to abundant
Understand the utility model.But the utility model can be implemented with being much different from other way described herein, this field
Technical staff can do similar improvement without prejudice to the utility model connotation, therefore the utility model is not by following public affairs
The limitation for the specific embodiment opened.
Unless otherwise defined, all technical and scientific terms used herein are led with the technology for belonging to the utility model
The normally understood meaning of the technical staff in domain is identical.Terminology used in the description of the utility model herein only be
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term as used herein "and/or" packet
Include any and all combinations of one or more related listed items.
Referring to Fig. 1 and Fig. 2, a kind of IGBT half-bridge module structure, the IGBT half-bridge module include substrate 1, are set on substrate 1
There are copper clad layers, the substrate 1 is formed with left DBC2 and right wing DBC3, the left DBC2 are equipped with 4 He of left igbt chip
Left FRD chip 5, the left igbt chip 4 and left FRD chip 5 are welded on the upper end the left DBC2 by tin cream, left
Road igbt chip 4 leads to the pole left G signal terminal 6, and left FRD chip 5 leads to the pole left E signal terminal 7；The right wing
DBC3 is equipped with right wing igbt chip 8 and right wing FRD chip 9, and the right wing igbt chip 8 and right wing FRD chip 9 pass through tin cream
It is welded on the upper end the right wing DBC3, right wing igbt chip 8 is connect with the right wing FRD chip 9, and right wing igbt chip 8 is drawn
There are the pole right wing G signal terminal 10 and the pole right wing E signal terminal 11；The pole left G signal terminal 6, the pole left E signal terminal 7,
The pole right wing G signal terminal 10 and the pole right wing E signal terminal 11 are welded on the side the right wing DBC3 by tin cream respectively.
In one embodiment of IGBT half-bridge module structure, the pole left G signal terminal 6 is from the left igbt chip
4 upsides are drawn, and are connected between the pole left G signal terminal 6 and left igbt chip 4 by aluminium wire.The pole left E signal terminal
7 draw on the downside of the left FRD chip 5, are connected between the pole left E signal terminal 7 and left FRD chip 5 by aluminium wire.This
The aluminium wire at place guides to right wing by ultrasonic bond mode using common crude aluminum wire bond (line footpath 100UM-500UM) in the market
The side DBC3.The pole left G signal terminal 6 and the pole left E signal terminal 7 draw from left DBC2 upper and lower sides from different directions respectively
Out, the pole left G signal terminal 6 and the pole left E signal terminal 7 are disposed in parallel in the side right wing DBC3, and structure partial is reasonable.
In one embodiment of IGBT half-bridge module structure, the pole right wing G signal terminal 10 is from the right wing IGBT core
It draws on the downside of piece 8, is connected between the pole right wing G signal terminal 10 and right wing igbt chip 8 by aluminium wire.The pole right wing E signal
Terminal 11 is drawn on the downside of the right wing igbt chip 8, passes through aluminium between the pole right wing E signal terminal 11 and right wing igbt chip 8
Silk conducting.Aluminium wire is guided to using common crude aluminum wire bond (line footpath 100UM-500UM) in the market by ultrasonic bond mode herein
The side right wing DBC3.
In one embodiment of IGBT half-bridge module structure, the pole left G signal terminal 6 and the pole left E signal terminal 7
Positioned at the upside of the right wing DBC3, the pole right wing G signal terminal 10 and the pole right wing E signal terminal 11 are located at the right wing
The downside of DBC3.The left DBC2 and right wing DBC3 uses unsymmetric structure, the pole left G signal terminal 6 and the pole left E
There is aluminium oxide ceramics at the interval of signal terminal 7, and there is oxidation at the pole right wing G signal terminal 10 and the interval of the pole right wing E signal terminal 11
Aluminium ceramics.
The utility model carries out differentiation design to two pieces of DBC structures inside IGBT half-bridge module, abandons single copper conductor
Welding scheme is reduced production difficulty, is improved production efficiency, improve product current carrying capacity using bonding routing connection,
Enhance the long-term reliability of product.Wherein left DBC2 and right wing DBC3 uses unsymmetric structure, is etched by circuit in left
The front DBC2 copper clad layers form the pole left G and the pole E；Right wing shape is guided to by crude aluminum silk ultrasonic bond mode in the pole left G and the pole E
At 6 pole left E signal terminal 7 of the pole left G signal terminal；The direct welding signal terminal on right wing DBC3.IGBT half can be improved
The production efficiency of bridge module promotes effect and reaches 60% or more；Traditional mode of production process section can be made to eliminate one step from the process, reduce manually at
This, reduces production difficulty；The pole G of left and right two-way and E electrode current pass through the conduction of the front DBC copper clad layers, and current carrying capacity is more
By force, loss current is smaller；Abandoning tradition traverse point welding manner skill conducts electric current by the front DBC copper clad layers, and long-time service can
It is higher by property.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it cannot be understood as the limitations to utility model patent range.It should be pointed out that for the common skill of this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The protection scope of the utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (7)
1. a kind of IGBT half-bridge module structure, the IGBT half-bridge module includes substrate, and substrate is equipped with copper clad layers, the substrate
It is formed with left DBC and right wing DBC, it is characterised in that：The left DBC is equipped with left igbt chip and left FRD chip,
The left igbt chip and left FRD chip are welded on the upper end the left DBC by tin cream, and left igbt chip is led to
The pole left G signal terminal, left FRD chip lead to the pole left E signal terminal；The right wing DBC is equipped with right wing IGBT core
Piece and right wing FRD chip, the right wing igbt chip and right wing FRD chip are welded on the upper end the right wing DBC by tin cream, right
Road igbt chip is connect with the right wing FRD chip, and right wing igbt chip leads to right wing G pole signal terminal and the pole right wing E letter
Number terminal；The pole left G signal terminal, the pole left E signal terminal, right wing G pole signal terminal and right wing E pole signal terminal point
The side the right wing DBC is not welded on by tin cream.
2. a kind of IGBT half-bridge module structure according to claim 1, it is characterised in that：The pole left G signal terminal
It draws on the upside of the left igbt chip, is connected between left G pole signal terminal and left igbt chip by aluminium wire.
3. a kind of IGBT half-bridge module structure according to claim 1, it is characterised in that：The pole left E signal terminal
It draws from the left FRD chip underside, is connected between left E pole signal terminal and left FRD chip by aluminium wire.
4. a kind of IGBT half-bridge module structure according to claim 1, it is characterised in that：The pole right wing G signal terminal
It draws on the downside of the right wing igbt chip, is connected between right wing G pole signal terminal and right wing igbt chip by aluminium wire.
5. a kind of IGBT half-bridge module structure according to claim 1, it is characterised in that：The pole right wing E signal terminal
It draws on the downside of the right wing igbt chip, is connected between right wing E pole signal terminal and right wing igbt chip by aluminium wire.
6. a kind of IGBT half-bridge module structure according to claim 1, it is characterised in that：The pole left G signal terminal
It is located at the upside of the right wing DBC, right wing G pole signal terminal and the pole right wing E signal terminal position with left E pole signal terminal
In the downside of the right wing DBC.
7. a kind of IGBT half-bridge module structure according to claim 1, it is characterised in that：The left DBC and right wing DBC
Using unsymmetric structure, there are aluminium oxide ceramics, the right wing G in left G pole signal terminal and the pole left E signal terminal interval
There is aluminium oxide ceramics at pole signal terminal and the pole right wing E signal terminal interval.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820785462.2U CN208157401U (en) | 2018-05-24 | 2018-05-24 | A kind of IGBT half-bridge module structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820785462.2U CN208157401U (en) | 2018-05-24 | 2018-05-24 | A kind of IGBT half-bridge module structure |
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| Publication Number | Publication Date |
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| CN208157401U true CN208157401U (en) | 2018-11-27 |
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| CN201820785462.2U Active CN208157401U (en) | 2018-05-24 | 2018-05-24 | A kind of IGBT half-bridge module structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349943A (en) * | 2019-06-30 | 2019-10-18 | 华中科技大学 | A kind of high pressure IGBT half-bridge module |
| WO2020108365A1 (en) * | 2018-11-28 | 2020-06-04 | 烟台台芯电子科技有限公司 | Igbt half-bridge module structure |
-
2018
- 2018-05-24 CN CN201820785462.2U patent/CN208157401U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020108365A1 (en) * | 2018-11-28 | 2020-06-04 | 烟台台芯电子科技有限公司 | Igbt half-bridge module structure |
| CN110349943A (en) * | 2019-06-30 | 2019-10-18 | 华中科技大学 | A kind of high pressure IGBT half-bridge module |
| CN110349943B (en) * | 2019-06-30 | 2021-06-11 | 华中科技大学 | High-voltage IGBT half-bridge module |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Yantai Yida Financial Leasing Co.,Ltd. Assignor: YANTAI TAIXIN ELECTRONICS TECHNOLOGY Co.,Ltd. Contract record no.: X2020980008906 Denomination of utility model: A half bridge module structure of IGBT Granted publication date: 20181127 License type: Exclusive License Record date: 20201208 |
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| EE01 | Entry into force of recordation of patent licensing contract | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A half bridge module structure of IGBT Effective date of registration: 20201210 Granted publication date: 20181127 Pledgee: Yantai Yida Financial Leasing Co.,Ltd. Pledgor: YANTAI TAIXIN ELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2020980009067 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Yantai Yida Financial Leasing Co.,Ltd. Assignor: YANTAI TAIXIN ELECTRONICS TECHNOLOGY Co.,Ltd. Contract record no.: X2020980008906 Date of cancellation: 20230915 |
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| EC01 | Cancellation of recordation of patent licensing contract | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230915 Granted publication date: 20181127 Pledgee: Yantai Yida Financial Leasing Co.,Ltd. Pledgor: YANTAI TAIXIN ELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2020980009067 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right |