CN110349943A - A kind of high pressure IGBT half-bridge module - Google Patents
A kind of high pressure IGBT half-bridge module Download PDFInfo
- Publication number
- CN110349943A CN110349943A CN201910581636.2A CN201910581636A CN110349943A CN 110349943 A CN110349943 A CN 110349943A CN 201910581636 A CN201910581636 A CN 201910581636A CN 110349943 A CN110349943 A CN 110349943A
- Authority
- CN
- China
- Prior art keywords
- igbt
- copper
- bridge arm
- chip
- dbc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of high pressure IGBT half-bridge modules, including copper base, upper bridge arm unit, lower bridge arm unit, the upper bridge arm unit and the lower bridge arm unit include DBC, IGBT unit, diode, for driving generation oscillatory occurences when igbt chip to puncture driving stage under high-power environment using twisted pair driving structure while realizing electronic power switch.The present invention forms the lesser driving circuit of loop area by using the grid and emitter of twisted pair line connection igbt chip, substantially reduce the coupling of driving circuit and external interference, it avoids driving generation oscillatory occurences when igbt chip to puncture driving stage under high-power environment, enhances the anti-interference ability of module.In addition, DBC structure is optimized in the present invention, honeycomb is presented in bottom copper layer, and increases the distance between copper sheet and copper sheet edge chamfer in DBC top copper layer, to solve the problems, such as that existing IGBT half-bridge module can not be suitable for high-power environment.
Description
Technical field
The invention belongs to encapsulation technology fields, more particularly, to a kind of high pressure IGBT half-bridge module.
Background technique
As tens of megawatts of power converters realize that megavolt electric machine speed regulation, solid-state transformer realize power distribution network and transmission line of electricity
The rise of the modern power electronics technologies such as power flowcontrol, high pressure full-controlled device initially enter the visual field of people, insulated gate bipolar
Transistor (Insulated Gate Bipolar Transistor, IGBT) combines power transistor and electric power field-effect is brilliant
The advantages of body pipe, has good switching characteristic, and high-voltage IGBT module is used as a kind of high pressure full-controlled device with important
Researching value.
In high pressure field, if higher electric field strength is more than dielectric disruptive field intensity, medium will puncture, and generate
The phenomenon that shelf depreciation, even damages entire device；Secondly, if the thermally matched coefficient difference of each contact surface is larger, in biggish heat
It is deformed under stress and just will form cavity, the air breakdown field strength in cavity only has 3kV/mm, it is easy to shelf depreciation occur.
Currently, the standard of IGBT half-bridge module on the market is 34mm, suitable for the voltage class of 1.2kv, igbt chip
Grid and emitter distance cause driving circuit area larger farther out, under high-power environment, driving circuit area
The electromagnetic interference that big easy coupled power loop generates leads to chip false triggering even gate breakdown to generate grid oscillation.
In addition, existing IGBT half-bridge module uses common double-sided copper-clad ceramic wafer (Direct Bonding Copper, DBC),
The distance between top copper layer copper sheet and layers of copper edge chamfer are smaller, and when voltage is larger, the concentration effect of electric field is larger, are easy
Point discharge is generated, causes to puncture, not be suitable in high pressure scene.
In conclusion the IGBT half-bridge module under providing a kind of environment suitable for high-power is urgently to be resolved asks
Topic.
Summary of the invention
In view of the drawbacks of the prior art, the purpose of the present invention is to provide a kind of high pressure IGBT half-bridge modules, it is intended to solve
The prior art is under high-power environment since the grid of igbt chip and emitter distance bring the biggish drive of area farther out
Dynamic circuit, caused by the electromagnetic interference that coupled power loop generates causes grid oscillation to keep its breakdown IGBT half-bridge module without
Method is suitable for the problem of high-power environment.
To achieve the above object, the present invention provides a kind of high pressure IGBT half-bridge modules, including copper base, upper bridge arm list
Member, lower bridge arm unit；
Wherein, upper bridge arm unit and lower bridge arm unit are centrosymmetric, and are connected by interconnection bridge and be welded on copper base
On；
Copper base provides mechanical support, and provide and lead for IGBT half-bridge module for the substrate as IGBT half-bridge module
Hot path；
Upper bridge arm unit and lower bridge arm unit are used for while realizing electronic power switch, using twisted pair driving structure
Driving stage is punctured to avoid oscillatory occurences is generated when driving igbt chip under high-power environment.
Preferably, upper bridge arm unit and lower bridge arm unit include DBC, IGBT unit, diode；
Wherein, DBC is respectively placed in the bottom of upper and lower bridge arm unit, and is welded on copper base, IGBT unit and its it is anti-simultaneously
The diode of connection is welded on DBC；
DBC provides required electrical connection for chip placement, and is designed as IGBT half-bridge mould using the layers of copper of piecemeal
Block buffering heat dissipation；
IGBT unit is used to twisted pair controlling turning on and off for igbt chip as driving circuit；
Diode is for providing freewheeling path in igbt chip switch state for reverse current.Preferably, two pole
Pipe unit can use fast recovery diode (Fast Recovery Diode, FRD) chip.
Preferably, IGBT unit includes igbt chip, twisted pair；
Wherein, the grid of igbt chip passes through bonding wire with emitter respectively and the both ends of twisted pair are connect；
Igbt chip is non-through i.e. disconnected electronic power switch, and when conducting is considered as short circuit, and when disconnection is considered as open circuit, is used for
Control high pressure IGBT half-bridge module turns on and off；
Twisted pair is used to connect the grid of igbt chip and emitter forms small area driving circuit, reduction and high-frequency loop
Between coupling.
Preferably, present invention is generally directed to the designs of silicon substrate high-voltage IGBT module, but to silicon carbide-based high-voltage IGBT module
Also there is very high reference value, since silicon carbide-based device operating frequencies and power density are higher, the high frequency circulating currents of generation are more
It is easily coupled to drive part, is more necessary to adopt twisted pair design.
Preferably, DBC includes sequentially connected top copper layer, ceramic layer and bottom copper layer from top to bottom；
Wherein, top copper layer is used to be designed as upper layer chip using the smooth layers of copper in tip to provide circulation path；
Ceramic layer is for undertaking main insulation pressure resistance and heat spreading function；Preferably, the material of ceramic layer is aluminium nitride,
With a thickness of 1mm；
Bottom copper layer, which is used to design using the layers of copper of blocking, is fixed on copper base for DBC, certainly for IGBT half-bridge module
Thermal diffusion under above provides path.
Preferably, the area of DBC is 49mm × 39mm.
Preferably, top copper layer is made of mutually independent copper sheet, and the current potential that different copper sheets is born is different, copper sheet edge
Chamfer radius is more than or equal to 1mm and is less than or equal to 5mm, and the spacing and layers of copper between each copper sheet stay back gauge to ceramic layer edge
It is less than or equal to 5mm from 2mm is more than or equal to, it is preferable that copper sheet edge chamfer radius can be 1mm, it is preferable that between each copper sheet
Spacing and the back gauge of staying at layers of copper to ceramic layer edge can be 2mm.
Preferably, bottom copper layer is divided equally by equilateral hexagon, constitutes honeycomb layers of copper, for reducing due to thermal stress or heat
The deformation that mismatch generates；
Contemplated above technical scheme through the invention can achieve the following beneficial effects compared with prior art:
1, the present invention provides a kind of high pressure IGBT half-bridge modules, using twisted pair driving structure, by using twisted pair
The grid and emitter for connecting igbt chip form the lesser driving circuit of loop area, reduce high-power high-frequency loop and drive
Coupling between dynamic circuit avoids driving generation oscillatory occurences when igbt chip to hit driving stage under high-power environment
It wears, solves the problems, such as that existing IGBT half-bridge module can not be suitable for high-power environment.
2, high pressure IGBT half-bridge module provided by the present invention is in the case where guaranteeing that thermal resistance is constant, by the surface area of DBC
Increase, and increase the distance between copper sheet and copper sheet edge chamfer in DBC top copper layer, so that electric field concentration effect subtracts
It is small, it avoids high-power environment lower prong from discharging, causes chip breakdown.
3, the bottom copper layer of DBC uses honeycomb layers of copper in high pressure IGBT half-bridge module provided by the present invention, reduces heat
The deformation that stress or thermal mismatching generate avoids IGBT half-bridge module temperature raising under high-power environment from leading to DBC base copper
Layer deformation is bent and separates generation gap between DBC ceramic layer to cause partial discharge phenomenon.
4, present invention is generally directed to the designs of silicon substrate high-voltage IGBT module, but also have very to silicon carbide-based high-voltage IGBT module
High reference value, since silicon carbide-based device operating frequencies and power density are higher, the high frequency circulating currents of generation are easier coupling
Drive part is closed, twisted pair design is more necessary to adopt.
5, for high pressure IGBT half-bridge module provided by the present invention using double DBC designs, the production procedure of every piece of DBC is all one
It causes, only needs to customize one piece of DBC in production, avoid the processing respectively of two pieces of DBC, improve the production effect of IGBT module
Rate reduces production cost.
Detailed description of the invention
Fig. 1 is the structure overall schematic of high pressure IGBT half-bridge module provided by the present invention；
Fig. 2 is DBC top level structure schematic diagram in high pressure IGBT half-bridge module provided by the present invention；
Fig. 3 is DBC fabric schematic diagram in high pressure IGBT half-bridge module provided by the present invention；
Fig. 4 is the equivalent circuit topology of high pressure IGBT half-bridge module provided by the present invention.
In figure: 1, copper base；2, upper bridge arm unit；3, lower bridge arm unit；4, interconnection bridge；21, upper bridge arm DBC；22, upper bridge
Arm IGBT unit；23, upper bridge arm FRD chip；24, upper bridge arm output terminal；221, upper bridge arm igbt chip；222, upper bridge arm is double
Twisted wire；31, lower bridge arm DBC；32, lower bridge arm IGBT unit；33, lower bridge arm FRD chip；34, lower bridge arm output terminal；35, function
Rate terminal；321, lower bridge arm igbt chip；322, lower bridge arm twisted pair；211, DBC top copper layer；212, solder layer；213,DBC
Bottom copper layer.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
To achieve the goals above, the present invention provides a kind of high pressure IGBT half-bridge modules, including copper base, upper bridge arm list
Member, lower bridge arm unit；Wherein, upper bridge arm unit and lower bridge arm unit are centrosymmetric, and connect and be welded on by interconnection bridge
On the copper base；Copper base provides mechanical support for the substrate as IGBT half-bridge module, and mentions for IGBT half-bridge module
For thermally conductive pathways；Upper bridge arm unit and lower bridge arm unit are used for while realizing electronic power switch, are driven using twisted pair
Structure is to avoid generation oscillatory occurences punctures driving stage when driving igbt chip under high-power environment.
Specifically, upper bridge arm unit and lower bridge arm unit include DBC, IGBT unit, diode；Wherein, DBC points
It is not placed in the bottom of upper and lower bridge arm unit, and is welded on copper base, IGBT unit and its welding of antiparallel diode
On DBC；DBC provides required electrical connection for chip placement, and is designed as IGBT half-bridge mould using the layers of copper of piecemeal
Block buffering heat dissipation；IGBT unit is used to twisted pair controlling turning on and off for igbt chip as driving circuit；Diode
Unit is for providing freewheeling path in igbt chip switch state for reverse current.Specifically, diode can use
FRD chip.
Specifically, IGBT unit includes igbt chip, twisted pair；Wherein, the grid of igbt chip leads to respectively with emitter
The both ends for crossing bonding wire and twisted pair connect；Igbt chip is for controlling turning on and off for high pressure IGBT half-bridge module；Tool
Body, igbt chip is non-through i.e. disconnected electronic power switch, and when conducting is considered as short circuit, and when disconnection is considered as open circuit；Twisted pair
Grid and emitter for connecting igbt chip form small area driving circuit, reduce the coupling between high-frequency loop.
Specifically, present invention is generally directed to the designs of silicon substrate high-voltage IGBT module, but to silicon carbide-based high-voltage IGBT module
Also there is very high reference value, since silicon carbide-based device operating frequencies and power density are higher, the high frequency circulating currents of generation are more
It is easily coupled to drive part, is more necessary to adopt twisted pair design.
Specifically, DBC includes sequentially connected top copper layer, ceramic layer and bottom copper layer from top to bottom；
Wherein, top copper layer is used to be designed as upper layer chip using the smooth layers of copper in tip to provide circulation path；Specifically,
Top copper layer is made of mutually independent copper sheet, and the current potential that different copper sheets is born is different, and copper sheet edge chamfer radius is greater than etc.
It is less than or equal to 5mm in 1mm, specifically, copper sheet edge chamfer radius can be 1mm, spacing and layers of copper between each layers of copper
Back gauge is stayed to be more than or equal to 2mm less than or equal to 5mm, specifically, spacing and copper between each layers of copper to ceramic layer edge
Stay back gauge of the layer to ceramic layer edge can be 2mm.Ceramic layer is for undertaking main insulation pressure resistance and heat spreading function；Tool
Body, the material of ceramic layer is aluminium nitride, with a thickness of 1mm；Bottom copper layer is used to fix DBC using the layers of copper design of blocking
On copper base, path is provided for the top-down thermal diffusion of IGBT half-bridge module；Specifically, bottom copper layer be cut into it is several
The equilateral hexagon of equal part constitutes honeycomb layers of copper, for reducing the deformation due to thermal stress or thermal mismatching generation.Specifically,
The area of DBC can be 49mm × 39mm.
For further description high pressure IGBT half-bridge module provided by the invention, by taking silicon substrate high-voltage IGBT module as an example
It is described in detail in conjunction with attached drawing and specific example:
It is as shown in Figure 1 the structure overall schematic of high pressure IGBT half-bridge module provided by the present invention, with diode list
For member uses FRD chip, specifically, including copper base 1, upper bridge arm unit 2, lower bridge arm unit 3；Wherein, upper bridge arm unit 2
It is centrosymmetric with lower bridge arm unit 3, and is connected and be welded on the copper base by interconnection bridge；Copper base 1 is used for conduct
The substrate of IGBT half-bridge module provides mechanical support, constitutes the thermally conductive pathways of IGBT half-bridge module；Upper bridge arm unit 2 and lower bridge
Arm unit 3 is used for while realizing electronic power switch, using twisted pair driving structure to avoid in high-power environment
Oscillatory occurences is generated when lower driving igbt chip to puncture driving stage；Wherein, upper bridge arm unit 2 and lower bridge arm unit 3 include
DBC, IGBT unit, diode.
Specifically, upper bridge arm unit 2 include upper bridge arm DBC21, upper bridge arm IGBT unit 22, upper bridge arm FRD chip 23, on
Bridge arm output terminal 24；Wherein, upper bridge arm DBC21 is placed in the bottom of bridge arm unit 2, and is welded on copper base 1, upper bridge arm
IGBT unit 22 and its antiparallel upper bridge arm FRD chip 23 are welded on bridge arm DBC21；Specifically, upper bridge arm DBC21 is used
In chip placement to provide required electrical connection, and the layers of copper based on piecemeal is designed as the buffering heat dissipation of IGBT half-bridge module；On
Bridge arm IGBT unit 22 is used to twisted pair controlling turning on and off for igbt chip as driving circuit；Upper bridge arm FRD core
Piece 23 is for providing freewheeling path in upper bridge arm igbt chip switch state for reverse current.Specifically, upper bridge arm IGBT is mono-
Member 22 includes upper bridge arm igbt chip 221, upper bridge arm twisted pair 222；Wherein, the grid G 1 of upper bridge arm igbt chip 221 and hair
Emitter-base bandgap grading E1 passes through bonding wire respectively and connect with the both ends of upper bridge arm twisted pair 222；Upper bridge arm igbt chip 221 is for controlling height
Pressure IGBT half-bridge module turns on and off；Specifically, igbt chip is non-through i.e. disconnected electronic power switch, regarded when being connected
For short circuit, when disconnection, is considered as open circuit；Upper bridge arm twisted pair 222 is used to connect the grid and emitter of bridge arm igbt chip 221
Small area driving circuit is formed, the coupling between high-frequency loop is reduced.
Lower bridge arm unit 3 is defeated including lower bridge arm DBC31, lower bridge arm IGBT unit 32, lower bridge arm FRD chip 33, lower bridge arm
Terminal 34, power terminal 35 out；Wherein, lower bridge arm DBC31 is placed in the bottom of lower bridge arm unit 3, and is welded on copper base 1,
Lower bridge arm IGBT unit 32 and its antiparallel lower bridge arm FRD chip 33 are welded on lower bridge arm DBC31；Specifically, lower bridge arm
DBC31 provides required electrical connection for chip placement, and the layers of copper based on piecemeal is designed as IGBT half-bridge module buffering
Heat dissipation；Lower bridge arm IGBT unit 32 is used to twisted pair controlling turning on and off for igbt chip as driving circuit；Lower bridge
Arm FRD chip 33 is for providing freewheeling path in lower bridge arm igbt chip switch state for reverse current.Lower bridge arm IGBT is mono-
Member 32 includes lower bridge arm igbt chip 321, lower bridge arm twisted pair 322；Wherein, the grid G 2 of lower bridge arm igbt chip 321 and hair
Emitter-base bandgap grading E2 passes through bonding wire respectively and connect with the both ends of lower bridge arm twisted pair 322；Lower bridge arm igbt chip 321 is for controlling height
Pressure IGBT half-bridge module turns on and off；Specifically, igbt chip is non-through i.e. disconnected electronic power switch, regarded when being connected
For short circuit, when disconnection, is considered as open circuit；Lower bridge arm twisted pair 322 is used to connect the grid and emitter of lower bridge arm igbt chip 321
Small area driving circuit is formed, the coupling between high-frequency loop is reduced.
Specifically, the driving circuit of upper bridge arm igbt chip 221 is drawn by supersonic bonding aluminum steel, then by manually twining
Around upper bridge arm twisted pair 222 be connected to module-external, upper bridge arm igbt chip collector passes through upper bridge arm DBC21 top layer copper sheet
It is connected with upper bridge arm output terminal 24, the emitter of upper bridge arm igbt chip 221 and the anode of upper bridge arm FRD chip 23 pass through
More supersonic bonding aluminum steels are connected to transition layers of copper, then the collector copper of lower bridge arm igbt chip 321 is connected to by interconnection bridge 4
Layer forms the access of power current.Likewise, the driving circuit of lower bridge arm igbt chip 321 is drawn by supersonic bonding aluminum steel
Out, then by the lower bridge arm twisted pair 322 of artificial winding it is connected to module-external, lower bridge arm igbt chip collector passes through lower bridge
Arm DBC31 top layer copper sheet is connected with lower bridge arm output terminal 34, the emitter and lower bridge arm FRD of lower bridge arm igbt chip 321
The anode of chip 33 is connected to transition layers of copper by more supersonic bonding aluminum steels, then is drawn by the power terminal 35 of ultrasonic bond
Module-external is arrived out.First module to be covered with sealing material before installing shell additional after the completion of chip module welding, to prevent
Phenomena such as chip dampness radiative aging, occurs.
Specifically, DBC includes sequentially connected top copper layer, ceramic layer and bottom copper layer from top to bottom, specifically, DBC
Area be 49mm × 39mm, upper bridge arm DBC21 is identical as the structure of lower bridge arm DBC31, for the above bridge arm DBC21, such as Fig. 2
It is shown DBC top level structure schematic diagram in high pressure IGBT half-bridge module provided by the present invention, wherein 211 be DBC top copper layer,
212 be solder layer, wherein top copper layer 211 is used to be designed as upper layer chip using the smooth layers of copper in tip to provide circulation path；
Specifically, top copper layer 211 is made of mutually independent copper sheet, the current potential that different copper sheets is born is different, copper sheet edge chamfer
Radius is more than or equal to 1mm and is less than or equal to 5mm, specifically, copper sheet edge chamfer radius can be 1mm, between each copper sheet between
Away from and layers of copper to ceramic layer edge stay back gauge be more than or equal to 2mm be less than or equal to 5mm, specifically, between each copper sheet
Spacing and the back gauge of staying at layers of copper to ceramic layer edge can be 2mm.The surface area of DBC is increased, and increases the top DBC
The distance between copper sheet and copper sheet edge chamfer in portion's layers of copper avoid high-power ring so that electric field concentration effect reduces
The electric discharge of border lower prong, causes chip breakdown.Ceramic layer is for undertaking main insulation pressure resistance and heat spreading function；Specifically,
The material of ceramic layer is aluminium nitride, with a thickness of 1mm；It is illustrated in figure 3 DBC in high pressure IGBT half-bridge module provided by the present invention
Fabric schematic diagram, wherein bottom copper layer 213, which is used to design using the layers of copper of blocking, is fixed on copper base for DBC, is
The top-down thermal diffusion of IGBT half-bridge module provides path；Specifically, bottom copper layer 213 is cut into the equilateral of several equal parts
Hexagon constitutes honeycomb layers of copper, for reducing the deformation due to thermal stress or thermal mismatching generation.
Specifically, being illustrated in figure 4 the equivalent circuit topology of high pressure IGBT half-bridge module provided by the present invention, high pressure
There are three types of working conditions in use for IGBT half-bridge module:
1, upper bridge arm unit 1 is open-minded, and lower bridge arm unit 2 turns off, and operating current is flowed into from upper bridge arm output terminal 24 to be passed through
Then upper bridge arm igbt chip 221 is flowed out from lower bridge arm output terminal 34；Specifically, in equivalent circuit topology, such as Fig. 4 institute
Show, operating current is flowed into from DC+ to flow out by Q1 from AC；
2, upper bridge arm unit 1 turns off, and lower bridge arm unit 2 is open-minded, and operating current is flowed into from lower bridge arm output terminal 34 to be passed through
Then lower bridge arm igbt chip 321 is flowed out from power terminal 35；Specifically, in equivalent circuit topology, as shown in figure 4, work
Electric current is flowed into from AC to flow out by Q2 from DC-；
3, upper bridge arm unit 1 is turned off with lower bridge arm unit 2, can generate reverse current, and reverse current is exported from lower bridge arm
Then terminal 34 is passed through by upper bridge arm FRD chip 23 from the outflow of upper bridge arm output terminal 24 or reverse current from power terminal 35
Lower bridge arm FRD chip 33 is crossed then to flow out from lower bridge arm output terminal 34；Specifically, in equivalent circuit topology, such as Fig. 4 institute
Show, then then reverse current is flowed out from DC+ outflow or reverse current from DC- by D1 from AC by D2 from AC.
Specifically, needing grid (G1, G2) input pulse to igbt chip when driving IGBT module, pulse is flowed through
Driving circuit is flowed back to by auxiliary emitter electrode (E1, E2) after igbt chip and thus constitutes driving circuit.When the input pulse of grid is
Igbt chip is open-minded when high level, and high-power electric current can flow to emitter (E1, E2) from collector (C1, C2), when grid
When input pulse is low level, chip shutdown；The violent electric current generated in the commutation course of power module switching transient becomes
Change, the Reverse recovery or the higher-order of oscillation as caused by parasitic parameter of diode will all appear in function in the form of high frequency circulating currents
Rate circuit.This high-frequency loop will pass through driving circuit of the Mutual Inductance Coupling to IGBT, and electromagnetic interference is caused to be formed on grid
Oscillation leads to igbt chip false triggering even gate breakdown.The present invention controls IGBT core as driving circuit using twisted pair
Piece turns on and off, and substantially reduces the area of driving circuit, reduces between high-power high-frequency loop and driving circuit
Coupling avoids driving generation oscillatory occurences when igbt chip to puncture driving stage under high-power environment, solves existing
IGBT half-bridge module can not be suitable for high-power environment the problem of.
Present invention is generally directed to the designs of silicon substrate high-voltage IGBT module, but also have to silicon carbide-based high-voltage IGBT module very high
Reference value, since silicon carbide-based device operating frequencies and power density are higher, the high frequency circulating currents of generation are easier to couple
To drive part, it is more necessary to adopt twisted pair design.
Core devices of the IGBT module as contemporary power electronics high-power energy transformation and transmission, in rail traffic, intelligence
There is a very wide range of application in the fields such as energy power grid, electric car, aerospace.Power module of the invention is applicable to higher electricity
The working environment of grade is pressed, and drive part does not need additionally to increase driving protection, simplifies the circuit of drive part.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (8)
1. a kind of high pressure IGBT half-bridge module, which is characterized in that including copper base, upper bridge arm unit, lower bridge arm unit；
The upper bridge arm unit and the lower bridge arm unit are centrosymmetric, and are connected and be welded on described copper-based by interconnection bridge
On plate；
The copper base provides mechanical support for the substrate as IGBT half-bridge module, and mentions for the IGBT half-bridge module
For thermally conductive pathways；
The upper bridge arm unit and the lower bridge arm unit are used for while realizing electronic power switch, are driven using twisted pair
Structure is to avoid generation oscillatory occurences punctures driving stage when driving igbt chip under high-power environment.
2. IGBT half-bridge module according to claim 1, which is characterized in that the upper bridge arm unit and the lower bridge arm list
Member includes DBC, IGBT unit, diode；
The DBC is respectively placed in the bottom of the upper bridge arm unit and the lower bridge arm unit, and is welded on copper base, described
IGBT unit and its antiparallel diode are welded on the DBC；
The DBC provides required electrical connection for chip placement, and is designed as the IGBT half using the layers of copper of piecemeal
Bridge module buffering heat dissipation；
The IGBT unit is used to twisted pair controlling turning on and off for igbt chip as driving circuit；
Diode is for providing freewheeling path in igbt chip switch state for reverse current.
3. IGBT half-bridge module according to claim 2, which is characterized in that the IGBT unit includes igbt chip, double
Twisted wire；
The both ends of the twisted pair pass through the grid of bonding wire and the igbt chip respectively and emitter is connected to form facet
Product driving circuit, reduces the coupling between high-frequency loop.
4. IGBT half-bridge module according to claim 2, which is characterized in that the DBC includes being sequentially connected from top to bottom
Top copper layer, ceramic layer and bottom copper layer；
Top copper layer is used to be designed as upper layer chip using the smooth layers of copper in tip to provide circulation path；
Ceramic layer is for undertaking main insulation pressure resistance and heat spreading function；
Bottom copper layer, which is used to design using the layers of copper of blocking, is fixed on copper base for the DBC, is the IGBT half-bridge mould
The top-down thermal diffusion of block provides path.
5. IGBT half-bridge module according to claim 4, which is characterized in that the top copper layer is by mutually independent copper sheet
Composition, the current potential that different copper sheets is born is different, and copper sheet edge chamfer radius is more than or equal to 1mm and is less than or equal to 5mm, each copper sheet
Between spacing and layers of copper to ceramic layer edge stay back gauge be more than or equal to 2mm be less than or equal to 5mm.
6. IGBT half-bridge module according to claim 4, which is characterized in that the bottom copper layer is equal by equilateral hexagon
Point, honeycomb layers of copper is constituted, for reducing the deformation due to thermal stress or thermal mismatching generation.
7. IGBT half-bridge module according to claim 2, which is characterized in that the diode uses FRD chip.
8. IGBT half-bridge module according to claim 1, which is characterized in that the IGBT half-bridge module is applied to encapsulation skill
Art field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910581636.2A CN110349943B (en) | 2019-06-30 | 2019-06-30 | High-voltage IGBT half-bridge module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910581636.2A CN110349943B (en) | 2019-06-30 | 2019-06-30 | High-voltage IGBT half-bridge module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110349943A true CN110349943A (en) | 2019-10-18 |
| CN110349943B CN110349943B (en) | 2021-06-11 |
Family
ID=68177365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910581636.2A Active CN110349943B (en) | 2019-06-30 | 2019-06-30 | High-voltage IGBT half-bridge module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110349943B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115985910A (en) * | 2023-03-22 | 2023-04-18 | 烟台台芯电子科技有限公司 | IGBT half-bridge power module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09261948A (en) * | 1996-03-26 | 1997-10-03 | Fuji Electric Co Ltd | Power converter |
| CN108051721A (en) * | 2017-12-08 | 2018-05-18 | 国网江苏省电力有限公司南京供电分公司 | A kind of IGBT method for testing reliability and system based on coaxial resistance |
| CN208157401U (en) * | 2018-05-24 | 2018-11-27 | 烟台台芯电子科技有限公司 | A kind of IGBT half-bridge module structure |
| CN208298812U (en) * | 2018-05-25 | 2018-12-28 | 比亚迪股份有限公司 | A kind of high-voltage power module |
-
2019
- 2019-06-30 CN CN201910581636.2A patent/CN110349943B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09261948A (en) * | 1996-03-26 | 1997-10-03 | Fuji Electric Co Ltd | Power converter |
| CN108051721A (en) * | 2017-12-08 | 2018-05-18 | 国网江苏省电力有限公司南京供电分公司 | A kind of IGBT method for testing reliability and system based on coaxial resistance |
| CN208157401U (en) * | 2018-05-24 | 2018-11-27 | 烟台台芯电子科技有限公司 | A kind of IGBT half-bridge module structure |
| CN208298812U (en) * | 2018-05-25 | 2018-12-28 | 比亚迪股份有限公司 | A kind of high-voltage power module |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115985910A (en) * | 2023-03-22 | 2023-04-18 | 烟台台芯电子科技有限公司 | IGBT half-bridge power module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110349943B (en) | 2021-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11355477B2 (en) | Power semiconductor module and power conversion device | |
| JP2015126342A (en) | Power circuit and power module | |
| JPH088397A (en) | Low inductance power semiconductor module | |
| CN103782380A (en) | Semiconductor module | |
| CN105210281B (en) | Converter equipment and method for manufacturing converter equipment | |
| DiMarino et al. | Design of a novel, high-density, high-speed 10 kV SiC MOSFET module | |
| CN204190731U (en) | High power semi-conductor circuit | |
| CN111916438B (en) | Silicon carbide Vienna rectifier half-bridge module packaging structure | |
| Solomon et al. | Highly integrated low-inductive power switches using double-etched substrates with through-hole viases | |
| JP2005005593A (en) | Semiconductor power module | |
| CN110197826A (en) | Semiconductor device and its manufacturing method and power-converting device | |
| JP2019017112A (en) | Power circuit | |
| CN107210290A (en) | Semibridge system power semiconductor modular and its manufacture method | |
| De et al. | Design, package, and hardware verification of a high-voltage current switch | |
| Mouawad et al. | Hybrid half-bridge package for high voltage application | |
| CN110071079A (en) | A kind of power device packaging structure and its method | |
| CN110349943A (en) | A kind of high pressure IGBT half-bridge module | |
| CN211182190U (en) | Insulated gate bipolar transistor, intelligent power module and air conditioner | |
| CN104465605A (en) | Semiconductor chip packaging structure | |
| CN109390395A (en) | Semiconductor device and power-converting device | |
| CN209389026U (en) | A kind of three-phase inversion IGBT module | |
| Wang et al. | Design of Low Inductance SiC-MOS/Si-IGBT Hybrid Module for PV Inverters | |
| Lee et al. | New PFC-integrated intelligent power module for home appliances | |
| CN108598074B (en) | Novel packaging structure's power module | |
| Nakazawa et al. | All-SiC Modules Equipped with SiC Trench Gate MOSFETs |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |