CN208014702U - 微发光二极管模块 - Google Patents

微发光二极管模块 Download PDF

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CN208014702U
CN208014702U CN201820351272.XU CN201820351272U CN208014702U CN 208014702 U CN208014702 U CN 208014702U CN 201820351272 U CN201820351272 U CN 201820351272U CN 208014702 U CN208014702 U CN 208014702U
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李远智
李家铭
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Uniflex Technology Inc
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Abstract

本实用新型提供一种微发光二极管模块，其包括多个并排的覆晶LED及一光感成像介质层，该些覆晶LED具有一发光侧及一电连接侧，各该覆晶LED的电连接侧具有一P极电接点及一N极电接点，电介质层形成于该些覆晶LED的电连接侧，且电介质层内形成有多个电信道，该些电信道中形成有多个分别对应该些覆晶LED的P极电接点及N极电接点的电路，各该电路并与其相对应的P极电接点或N极电接点接触。本实用新型通过在预先排列好的LED数组上直接重制电路，不但加工良率高，制程时间也预计可以大幅缩短。

Description

微发光二极管模块
技术领域
本实用新型是关于一种显示面板用的微发光二极管模块。
背景技术
液晶(LCD)显示面板及有机发光二极管(OLED)显示面板为目前常见的显示面板，相较于OLED显示面板的每个像素都会自发光，以往的LCD显示面板由于需通过电流控制每个像素点的过光率，无可避免地会发生漏光的现象，因而导致现有技术LCD显示面板的对比度及呈色表现均不如OLED显示面板。
为了改善LCD显示面板对比度不足的问题，业界提出一种具有微发光二极管(Micro LED)的直下型背光模块，通过背光模块中众多LED的明暗控制，可大幅减少以往LCD显示面板常见的漏光现象，使对比度及呈色表现大幅提升。除此之外，微发光二极管也可使用三原色LED作为自发光显示画素，而直接作为LED显示面板使用。
以往Micro LED技术涉及LED芯片的巨量转移(Mass Transfer)，亦即需要将众多LED芯片批量地转移到预先制好的电路基板上，现有技术的巨量转移技术例如图21至图25所示，首先提供一预先制好的集成电路载板1，而后在集成电路载板1上的多个电接点2印刷锡膏3，接着提供一个载有多个LED芯片4的载板5，令LED芯片4的P极、N极电接点6a、6b分别正对电路载板1的多个电接点2，最后重熔锡膏3，使P极、N极电接点6a、6b与电路载板1的多个电接点2电性连接。
现有技术巨量转移技术仍有其技术瓶颈在于，随着LED芯片的微型化趋势，若一次转移大量LED芯片，则对于转移设备的精度要求极高，良率难以提升；若一次仅转移少量LED芯片，则转移时间将会显著增加，产能难以提升。
因此，如何改善现有技术Micro LED技术所面临巨量转移瓶颈，实是值得本领域人士思量的。
实用新型内容
有鉴于此，本实用新型的主要目的在于提供一种不需将LED芯片转移到预制电路基板的微发光二极管模块。
为了达成上述及其它目的，本实用新型提供一种微发光二极管模块，其包括多个并排的覆晶LED及一光感成像介质层，该些覆晶LED具有一发光侧及一电连接侧，各该覆晶LED的电连接侧具有一P极电接点及一N极电接点，电介质层形成于该些覆晶LED的电连接侧，且电介质层内形成有多个电信道，该些电信道中形成有多个分别对应该些覆晶LED的P极电接点及N极电接点的电路，各该电路并与其相对应的P极电接点或N极电接点接触。
通过上述技术，本实用新型并不采用以往需要将LED数组巨量转移到预制电路基板的制程，而改为在预先排列好的LED数组上直接重制电路，此制法不但加工良率高，而且设备投资成本低，将大大有助于Micro LED技术的推广应用。
有关本实用新型的其它功效及实施例的详细内容，配合图式说明如下。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1是本实用新型微发光二极管模块其中一实施例的剖面示意图；
图2至图20为本实用新型微发光二极管模块其中一实施例的制造过程的剖面示意图；
图21至图25为现有技术微发光二极管的巨量转移过程的剖面示意图。
符号说明
1 集成电路载板 2 电接点
3 锡膏 4 LED芯片
5 载板 6a P极电接点
6b N极电接点 10 载体
20 覆晶LED 21 发光侧
22 电连接侧 23 P极电接点
24 N极电接点 30 电介质层
30a、30b 沟纹 31 第一侧
32 第二侧 33 电通道
40 电路 40a 第一镀铜层
40b 第二镀铜层 50、60 干膜
70 防焊层
具体实施方式
请参考图1，所绘示者为本实用新型其中一实施例的微发光二极管模块，该微发光二极管模块包括多个并排的覆晶LED 20、一电介质层30、多个形成于电介质层30中的电路40及一防焊层70。本实用新型的微发光二极管模块中的覆晶LED 20例如可发出单一色光(例如白光)而应用于液晶显示器作为背光模块使用，或者，本实用新型的微发光二极管模块亦可设有可分别发出三原色光(或进一步包括黄光)的覆晶LED 20而应用于微发光二极管显示器 (Micro Light Emitting Diode Display)。
该些覆晶LED 20例如成数组排列，覆晶LED 20具有一发光侧21及一电连接侧22，且每个覆晶LED 20的电连接侧22具有呈凸块(bump)状的P极电接点(p-contact pad)23及N极电接点(n-contact pad)24，P极电接点电连接该覆晶LED的P极(阳极)，N极电接点则电连接该覆晶LED的N极(阴极)，P极、N极以环氧树脂等透明封装材料包覆，P极电接点及N极电接点裸露于封装材料之外，覆晶LED可朝发光侧21发光。为了加工的便利性，提高制造过程的精度，该些覆晶LED 20的发光侧21可贴覆于一载体10上，该载体10例如可为硬板；当所述微发光二极管模块完成制作后，载体10可被移除。
电介质层30形成于该些覆晶LED 20的电连接侧22，电介质层30可由光感成像电介质(photoimageable dielectric)制成，所述光感成像电介质对特定波长范围的光线(例如紫外线)具有光敏性，所述光感成像电介质中的感光剂(例如为感旋光性聚合物)具有光敏化基团，这些光敏化基团被特定波长范围的光线照射时会发生光化学反应；所述光感成像电介质可以是正光感成像电介质，其感光区可溶解于显影液中；所述光感成像电介质也可以是负光感成像电介质，其非感光区可溶解于显影液中。
通过曝光显影技术，所述电介质层可形成有多个电信道33，电信道33中形成有多个分别对应P极电接点23及N极电接点24的电路40，各个电路40 与其相对应的P极电接点23或N极电接点24直接接触，电路40与P极或N 极电接点之间无须设置导电胶或锡膏，电路40例如由铜等导电性佳的材质制成。在其它可能的实施方式中，电介质层可改由非光感成像电介质制成，所述电信道例如可改以雷射加工方式制得。
请一并参考图1及图12，电介质层30具有一面向该些覆晶LED 20的第一侧31及一远离该些覆晶LED 20的第二侧32，基于电路配置的需求，所述电路40的局部可能会自电介质层30的第二侧32裸露，防焊层70则覆盖裸露的电路40及电介质层30的第二侧，防焊层70与电介质层30均为电绝缘体。可以理解的是，这些电路40可能会有一部份自防焊层70裸露的电接点，这些电接点例如可与驱动IC芯片电连接。在其它可能的实施方式中，电路被电介质层覆盖，无须设置防焊层。
图2至图20公开一种微发光二极管模块的制造过程，说明如下：
如图2所示，将多个覆晶LED 20的发光侧21排列并贴覆于一可被移除的载体10上，使该些覆晶LED 20可在载体10上成数组并排，且覆晶LED 20 的电连接侧22、P极电接点23及N极电接点24朝向上方。
如图3所示，在该些覆晶LED 20的电连接侧22形成电介质层30的底层， P极电接点23及N极电接点24的顶面也被所述电介质层30覆盖，本实施方式使用光感成像电介质作为电介质层30。
如图4所示，对该电介质层30进行曝光处理，将光罩(图未绘示)上的图形转移到电介质层30上，电介质层30的一部份为感光区，另一部份为非感光区。
如图5所示，利用显影液将电介质层30的一部份移除，而在电介质层30 的底层形成多个沟纹30a，至少一部份沟纹30a正对P极电接点23及N极电接点24，使P极电接点23及N极电接点24裸露。
如图6所示，利用化学镀铜及/或电镀铜方式在电介质层30、P极电接点 23及N极电接点24顶面形成第一镀铜层40a，接着如图7所示，在第一镀铜层40a顶面形成一感旋光性干膜50，而后如图8所示进行曝光影像转移处理，将另一光罩(图未绘示)上的图形转移到干膜50上，接着如图9所示进行显影处理将一部份的干膜50去除，而后如图10所示利用蚀刻液将未被干膜50 覆盖的铜移除，再如图11所示将干膜50移除。
而后，基于电路设计的需求，可如图12至图14所示进行光感成像电介质涂布、曝光图像转移、及显影作业，再形成电介质层30的另一层，此时电介质层30各分层中所形成的沟纹30a、30b可作为如前图1所示的电通道33。
接着，可如图15至图20所示进行电镀铜、形成干膜60、曝光图像转移、显影、蚀刻、移除干膜60处理，形成图样化的第二镀铜层40b，其中第一、第二镀铜层40a、40b的结合即形成图1所示的电路40，最后再于电路40及电介质层30的第二侧32形成防焊层70，即成为如图1所示的微发光二极管模块。除此之外，前述作业完成后，微发光二极管模块的载体10可被进一步移除。
需说明的是，所述电介质层及电路的制程可依电路配置需求分为一层以上分层施作，而不以上述制造过程所示范例为限。在其它可能的实施方式中，分层施作而成的各个电路未必仅在垂直方向延伸，这些电路的一部份也可能在水平方向上布线排列。在其它可能的实施方式中，该些覆晶LED未必等间距排列，例如，可在部分相邻的覆晶LED之间预留电路布线信道。
以上所述的实施例及/或实施方式，仅是用以说明实现本实用新型技术的较佳实施例及/或实施方式，并非对本实用新型技术的实施方式作任何形式上的限制，任何本领域技术人员，在不脱离本实用新型内容所公开的技术手段的范围，当可作些许的更动或修饰为其它等效的实施例，但仍应视为与本实用新型实质相同的技术或实施例。

Claims (4)

1.一种微发光二极管模块，其特征在于，包括：
多个并排的覆晶LED，该些覆晶LED具有一发光侧及一电连接侧，各该覆晶LED的电连接侧具有一P极电接点及一N极电接点；以及
一电介质层，形成于该等覆晶LED的电连接侧，该电介质层内形成有多个电信道，该些电信道中形成有多个分别对应该些覆晶LED的P极电接点及N极电接点的电路，各该电路并与其相对应的P极电接点或N极电接点接触。
2.如权利要求1所述的微发光二极管模块，其特征在于，该电介质层具有一面向该些覆晶LED的第一侧及一远离该些覆晶LED的第二侧，该微发光二极管模块更包括一覆盖该电介质层第二侧的防焊层。
3.如权利要求2所述的微发光二极管模块，其特征在于，所述电路的局部自该电介质层的第二侧裸露，该防焊层覆盖所述裸露的电路。
4.如权利要求1所述的微发光二极管模块，其特征在于，更包括一可移除的载体，该些覆晶LED的发光侧贴覆于该载体。
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