CN207294881U - 化学气相沉积炉 - Google Patents
化学气相沉积炉 Download PDFInfo
- Publication number
- CN207294881U CN207294881U CN201721105754.9U CN201721105754U CN207294881U CN 207294881 U CN207294881 U CN 207294881U CN 201721105754 U CN201721105754 U CN 201721105754U CN 207294881 U CN207294881 U CN 207294881U
- Authority
- CN
- China
- Prior art keywords
- vapor deposition
- chemical vapor
- crucible
- deposition stove
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 51
- 239000000428 dust Substances 0.000 claims abstract description 35
- 238000003860 storage Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000002994 raw material Substances 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 5
- 238000013022 venting Methods 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract description 24
- 239000011701 zinc Substances 0.000 abstract description 22
- 239000005083 Zinc sulfide Substances 0.000 abstract description 21
- 229910052725 zinc Inorganic materials 0.000 abstract description 21
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract description 21
- 239000003595 mist Substances 0.000 abstract description 8
- 238000004073 vulcanization Methods 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 12
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 8
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000003517 fume Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000019086 sulfide ion homeostasis Effects 0.000 description 1
Landscapes
- Manufacture And Refinement Of Metals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721105754.9U CN207294881U (zh) | 2017-08-31 | 2017-08-31 | 化学气相沉积炉 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721105754.9U CN207294881U (zh) | 2017-08-31 | 2017-08-31 | 化学气相沉积炉 |
Publications (1)
Publication Number | Publication Date |
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CN207294881U true CN207294881U (zh) | 2018-05-01 |
Family
ID=62438290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201721105754.9U Withdrawn - After Issue CN207294881U (zh) | 2017-08-31 | 2017-08-31 | 化学气相沉积炉 |
Country Status (1)
Country | Link |
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CN (1) | CN207294881U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107604340A (zh) * | 2017-08-31 | 2018-01-19 | 清远先导材料有限公司 | 化学气相沉积炉 |
-
2017
- 2017-08-31 CN CN201721105754.9U patent/CN207294881U/zh not_active Withdrawn - After Issue
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107604340A (zh) * | 2017-08-31 | 2018-01-19 | 清远先导材料有限公司 | 化学气相沉积炉 |
CN107604340B (zh) * | 2017-08-31 | 2023-09-01 | 安徽光智科技有限公司 | 化学气相沉积炉 |
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Effective date of registration: 20200511 Address after: 239004 east of yongyang Road, west of Nanjing Road, north of Anqing road and south of Lu'an road in Langya Economic Development Zone, Langya District, Chuzhou City, Anhui Province Patentee after: Anhui Guangzhi Technology Co.,Ltd. Address before: 511517 Guangdong province Qingyuan Baijia Industrial Park 27-9B Patentee before: FIRST RARE MATERIALS Co.,Ltd. |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2020990000433 Denomination of utility model: Chemical vapor deposition furnace Granted publication date: 20180501 License type: Common License Record date: 20200821 |
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Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2022980005544 Denomination of utility model: Chemical vapor deposition furnace Granted publication date: 20180501 License type: Common License Record date: 20220520 |
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EC01 | Cancellation of recordation of patent licensing contract |
Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2020990000433 Date of cancellation: 20220413 |
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EC01 | Cancellation of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2022980005544 Date of cancellation: 20230103 |
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Granted publication date: 20180501 Effective date of abandoning: 20230901 |
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AV01 | Patent right actively abandoned |