CN206804191U - A kind of silicon capacitive pressure transducer for improving overload response speed - Google Patents
A kind of silicon capacitive pressure transducer for improving overload response speed Download PDFInfo
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- CN206804191U CN206804191U CN201720294825.8U CN201720294825U CN206804191U CN 206804191 U CN206804191 U CN 206804191U CN 201720294825 U CN201720294825 U CN 201720294825U CN 206804191 U CN206804191 U CN 206804191U
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- polar plate
- sapphire
- fixed polar
- silicon
- oil guide
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Abstract
The utility model provides a kind of silicon capacitive pressure transducer for improving overload response speed, include upper sapphire fixed polar plate, silicon movable electrode, lower sapphire fixed polar plate, connecting pipe and base successively from top to bottom, connecting pipe is set in the base, the center of upper and lower sapphire fixed polar plate is equipped with pressure guide hole, pressure guide hole communicates with connecting pipe, the upper and lower surface for the middle hard core that silicon movable electrode is provided with is respectively equipped with line style Oil Guide slot structure, and the metal electrode being engaged with line style Oil Guide slot structure is designed with upper and lower sapphire fixed polar plate.Core component of the present utility model realizes that both materials all do not have creep, avoid the long-time stability for due to the slow release phenomenon of thermal stress caused by creep, improving sensor using silicon on sapphire sapphire structures；And the setting of line style Oil Guide slot structure, remain to form unimpeded Oil Guide passage after can guarantee that pressure overload, so as to improve the screen resilience after overload between pole plate, improve the response speed to pressure.
Description
Technical field
It the utility model is related to technical field of sensor manufacture, more particularly to a kind of silicon electric capacity for improving overload response speed
Pressure sensor.
Background technology
Silicon capacitive pressure transducer measures pressure using capacitance principle, is the critical component of pressure measuring instruments.With diffusion
Silicon pressure sensor is compared, and silicon capacitive pressure transducer has the advantages of its is unique, is one of modern micro-electromechanical pressure transducer
Important branch and part, and the important expansion to piezoresistive silicon sensor.Existing silicon capacitive pressure transducer is main
It is to form sandwich structure by two Pyrex pieces and a wafer bonding, the creep of Pyrex is big, is produced in technical process
Raw thermal stress slowly discharges the long-time stability that can reduce sensor by creep；And when pressure overload, between pole plate
Screen resilience it is very big, may be prevented from the rebound velocity after middle hard core overvoltage, reduce the response speed to pressure.
The content of the invention
The utility model is exactly to be directed to above technical problem, there is provided a kind of silicon capacitive pressure for improving overload response speed passes
Sensor.
The utility model to achieve the above object, using following technical scheme：A kind of silicon electricity for improving overload response speed
Hold pressure sensor, including silicon movable electrode, the both sides up and down of silicon movable electrode are arranged with sapphire fixed polar plate with
Sapphire fixed polar plate, the lower end of lower sapphire fixed polar plate are sequentially provided with connecting pipe and base, and connecting pipe is arranged on base
In the hole being provided with, the center of upper sapphire fixed polar plate and lower sapphire fixed polar plate is equipped with pressure guide hole, and lower sapphire is fixed
The pressure guide hole that pole plate is provided with communicates with connecting pipe, and silicon movable electrode includes clamped side, elastic membrane and middle hard core, middle hard core
Both ends clamped side is connected by elastic membrane, the upper and lower surface of middle hard core is respectively equipped with line style Oil Guide slot structure, upper sapphire
It is designed with what is be engaged with line style Oil Guide slot structure on fixed polar plate and lower sapphire fixed polar plate and the contact surface of middle hard core
The lower surface of metal electrode, the upper surface of upper sapphire fixed polar plate and lower sapphire fixed polar plate is provided with metallic solder layer, leads
The inwall in pressure hole is deposited with metal connecting layer, metal connecting layer connection metal electrode and metallic solder layer.
The length of the line style Oil Guide slot structure, which is greater than on sapphire fixed polar plate and lower sapphire fixed polar plate, to be set
The length of some metal electrodes.
The upper sapphire fixed polar plate, silicon movable electrode and lower sapphire fixed polar plate side are provided with lateral electrode.
Compared with prior art, the beneficial effects of the utility model are：Core component of the present utility model using sapphire-
Silicon-on-sapphire structure realizes that both materials all do not have creep, avoids because thermal stress caused by creep slowly discharges now
As improving the long-time stability of sensor；And the setting of line style Oil Guide slot structure, it can guarantee that pressure remains to after reaching overload
Unimpeded Oil Guide passage is formed, so as to improve the screen resilience after overload between pole plate, improves the response speed to pressure.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model；
In figure：1st, silicon movable electrode；2nd, upper sapphire fixed polar plate；3rd, lower sapphire fixed polar plate；4th, connecting pipe；5th, bottom
Seat；6th, pressure guide hole；7th, clamped side；8th, elastic membrane；9th, middle hard core；10th, line style Oil Guide slot structure；11st, metal electrode；12nd, it is golden
Belong to weld layer；13rd, metal connecting layer；14th, lateral electrode.
Embodiment
The utility model is described in further detail with reference to the accompanying drawings and examples：
As shown in figure 1, a kind of silicon capacitive pressure transducer for improving overload response speed, including silicon movable electrode 1, silicon can
The both sides up and down of moving electrode 1 are arranged with sapphire fixed polar plate 2 and lower sapphire fixed polar plate 3, lower sapphire fixed pole
The lower end of plate 3 is sequentially provided with connecting pipe 4 and base 5, and connecting pipe 4 is arranged in the hole that base 5 is provided with, upper sapphire fixed pole
The center of plate 2 and lower sapphire fixed polar plate 3 is equipped with pressure guide hole 6, the pressure guide hole 6 that lower sapphire fixed polar plate 3 is provided with
Connecting pipe 4 communicates, and silicon movable electrode 1 includes clamped side 7, elastic membrane 8 and middle hard core 9, and the both ends of middle hard core 9 pass through elasticity
Film 8 connects clamped side 7, and the upper and lower surface of middle hard core 9 is respectively equipped with line style Oil Guide slot structure 10, upper sapphire fixed polar plate 2
With lower sapphire fixed polar plate 3 with being designed with the metal being engaged with line style Oil Guide slot structure 10 on the contact surface of middle hard core 9
The lower surface of electrode 11, the upper surface of upper sapphire fixed polar plate 2 and lower sapphire fixed polar plate 3 is provided with metallic solder layer 12,
The inwall of pressure guide hole 6 is deposited with metal connecting layer 13, and metal connecting layer 13 connects metal electrode 11 and metallic solder layer 12.
The length of the line style Oil Guide slot structure 10 is greater than sapphire fixed polar plate 2 and lower sapphire fixed polar plate 3
The length for the metal electrode 11 being provided with.
The upper sapphire fixed polar plate 2, silicon movable electrode 1 and the lower side of sapphire fixed polar plate 3 are provided with lateral electrode
14。
The utility model forms condenser type core component using sapphire-silicon-on-sapphire Direct Bonding, due to both materials
Material all have creep, occurs so avoiding because thermal stress by slowly being discharged caused by creep causes sensor characteristics
The situation that long-time stability are deteriorated；And the setting of line style Oil Guide slot structure 10, it can guarantee that pressure reaches middle hard core 9 after overload
When being bonded with metal electrode 11, still there is line style oil guide groove structure 10 to form unimpeded Oil Guide passage, so as to effectively reduce
Resilience damping after overvoltage is bonded between silicon movable plate 1 and upper sapphire fixed polar plate 2 and lower sapphire fixed polar plate 3, from
And effectively improve after overload to the response speed of pressure.
The utility model is exemplarily described above in conjunction with accompanying drawing, it is clear that the utility model specific implementation not by
The limitation of aforesaid way, if the various improvement that methodology and technical scheme of the present utility model are carried out are employed, or without
Improvement directly applies to other occasions, within the scope of protection of the utility model.
Claims (3)
1. a kind of silicon capacitive pressure transducer for improving overload response speed, including silicon movable electrode (1), it is characterised in that silicon
The both sides up and down of movable electrode (1) are arranged with sapphire fixed polar plate (2) and lower sapphire fixed polar plate (3), lower blue precious
The lower end of stone fixed polar plate (3) is sequentially provided with connecting pipe (4) and base (5), and connecting pipe (4) is arranged on what base (5) was provided with
The center of Kong Zhong, upper sapphire fixed polar plate (2) and lower sapphire fixed polar plate (3) is equipped with pressure guide hole (6), and lower sapphire is consolidated
The pressure guide hole (6) that fixed plate (3) is provided with communicates with connecting pipe (4), and silicon movable electrode (1) includes clamped side (7), elastic membrane
(8) and middle hard core (9), the both ends of middle hard core (9) connect clamped side (7) by elastic membrane (8), middle hard core (9) it is upper
Lower two sides is respectively equipped with line style Oil Guide slot structure (10), upper sapphire fixed polar plate (2) and lower sapphire fixed polar plate (3) with
Between hard core (9) contact surface on be designed with the metal electrode (11) that is engaged with line style Oil Guide slot structure (10), upper sapphire is consolidated
The upper surface of fixed plate (2) and the lower surface of lower sapphire fixed polar plate (3) are provided with metallic solder layer (12), pressure guide hole (6)
Inwall is deposited with metal connecting layer (13), metal connecting layer (13) connection metal electrode (11) and metallic solder layer (12).
A kind of 2. silicon capacitive pressure transducer for improving overload response speed according to claim 1, it is characterised in that institute
The length for stating line style Oil Guide slot structure (10) is greater than on sapphire fixed polar plate (2) and lower sapphire fixed polar plate (3) and set
The length of some metal electrodes (11).
A kind of 3. silicon capacitive pressure transducer for improving overload response speed according to claim 1, it is characterised in that institute
State sapphire fixed polar plate (2), silicon movable electrode (1) and lower sapphire fixed polar plate (3) side and lateral electrode (14) is installed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720294825.8U CN206804191U (en) | 2017-03-24 | 2017-03-24 | A kind of silicon capacitive pressure transducer for improving overload response speed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720294825.8U CN206804191U (en) | 2017-03-24 | 2017-03-24 | A kind of silicon capacitive pressure transducer for improving overload response speed |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206804191U true CN206804191U (en) | 2017-12-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720294825.8U Active CN206804191U (en) | 2017-03-24 | 2017-03-24 | A kind of silicon capacitive pressure transducer for improving overload response speed |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111487006A (en) * | 2020-04-16 | 2020-08-04 | 南京高华科技股份有限公司 | Micro differential pressure sensor based on stress isolation structure |
-
2017
- 2017-03-24 CN CN201720294825.8U patent/CN206804191U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111487006A (en) * | 2020-04-16 | 2020-08-04 | 南京高华科技股份有限公司 | Micro differential pressure sensor based on stress isolation structure |
| CN111487006B (en) * | 2020-04-16 | 2021-07-20 | 南京高华科技股份有限公司 | Micro differential pressure sensor based on stress isolation structure |
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