CN204924513U - Silica -based pressure sensor - Google Patents
Silica -based pressure sensor Download PDFInfo
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- CN204924513U CN204924513U CN201520696017.5U CN201520696017U CN204924513U CN 204924513 U CN204924513 U CN 204924513U CN 201520696017 U CN201520696017 U CN 201520696017U CN 204924513 U CN204924513 U CN 204924513U
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Abstract
The utility model provides a silica -based pressure sensor, differential pressure sensitive apparatus adopt the differential capacitor structure, and characterized by from the top down is fixed polar plate, glass bottom plate, is led and pressed tube packaging to form by the fixed polar plate of last glass, the movable polar plate of the sensitive chip of silicon, lower glass in proper order, static pressure compensation unit adopts the silicon pressure drag chip of exhausted press seal dress to measure the static pressure magnitude, and the point type bonds the suspension and is fixed in differential pressure sensitive apparatus top, and the signal drift volume is little, and save space and the differential pressure sensitive apparatus forms the suspension of combined type stacked structure and welds in packaging structure. Packaging structure adopts and hangs the floating structure design, and the composite construction suspension encapsulation of differential pressure, static pressure is in the sensor base, and lead wire seat in base one end is drawn and is pressed the pipe to be located the base other end, and each part passes through the welding of modified welding process and become integrative on the sensor base. Differential pressure sensitive apparatus and static pressure compensation unit suspend and encapsulate in sensor packaging structure's pressurized cavity, make static pressure characteristic, tolerance, stability, the reliability of sensor better.
Description
Technical field
The utility model relates to technical field of sensor manufacture, is a kind of silicon substrate pressure sensor.
Background technology
Along with the high speed development of sensor technology, the application of silicon substrate pressure sensor is more and more extensive, and progressively to high precision, high stability, high reliability, networking, intellectuality, integrated direction development; Wherein capacitor type silicon substrate pressure sensor is acknowledged as with its high precision, high stable, the outstanding technical advantage such as highly reliable the novel silicon base pressure transducer that a new generation has broad based growth future, is the indispensable critical component of automation control area.Capacitor type silicon substrate pressure sensor utilizes capacitance principle to measure pressure, adopt single crystal silicon material, and utilize microelectronics and micromachined integration technology to make, it is a kind of new structure type force-sensing parts, owing to there is not the electric isolution problem of PN junction, therefore the aspect such as its measuring accuracy, stability, reliability all has obvious technical advantage.But owing to being subject to the restriction of the factors such as the integrity of raw material state, technological equipment condition, processing technology and affecting, existing silicon substrate pressure sensor manufacture process also also exists technical matterss such as making yield rate is on the low side, static pressure error has certain dispersion, the weld bond leakage of oil of encapsulating structure, these problems directly affect the performance of sensor, reliability and yield rate, play restrictive function to applying of this silicon substrate pressure sensor.Therefore, study a kind of capacitor type silicon substrate pressure sensor, not only can promote the independent development capability of China's industrial automation instrument, and for promoting the industry development of China's sensor technical field, promote that the raising of China's Row control and automatic technology level all can play vital effect.
Summary of the invention
The purpose of this utility model is to provide a kind of silicon substrate pressure sensor, guarantees the Static compression performance of sensor, tolerance, stability, better reliability.
This silicon substrate pressure sensor, be made up of differential pressure Sensitive Apparatus, static pressure compensation unit, encapsulating structure three part, it is characterized in that differential pressure Sensitive Apparatus adopts differential capacitive structure: encapsulated formed, for gathering differential pressure signal by upper glass fixed polar plate, silicon-sensitive chip movable plate, lower-glass fixed polar plate, glass film plates, connecting pipe successively from top to bottom, static pressure compensation unit adopts 4 gluing suspensions to be fixed on the responsive upper surface of differential pressure near sintering lead-in wire side, forms combined type stepped construction, for the static pressure value of measure field with differential pressure Sensitive Apparatus, encapsulating structure: comprise sensor base, two impulse conduits and adaptor, wire holder, on, bottom end cover, in sensor base, stage casing is oppositely arranged, bottom end cover, described combined type stepped construction is placed in, between bottom end cover, and in the encapsulating structure that is welded on and there is silicon oil infilling liquid of being suspended by connecting pipe below differential pressure Sensitive Apparatus, fill ceramic block pad in the gap of combined type stepped construction and sensor base, wire holder draws sintering lead-in wire, upper glass fixed polar plate, silicon-sensitive chip movable plate, glass film plates, the silicon pressure drag chip of static pressure compensation unit all there is pressure welding point, pressure welding point and corresponding sintering lead-in wire is connected with Si-Al wire line, respectively the voltage output signal of the electric capacity of differential pressure device output signal and static pressure compensation unit is drawn out on the sintering lead-in wire of sensor base, wire holder is positioned at sensor base one end, two impulse conduits are placed in the sensor base other end by adaptor, two impulse conduits are connected with low pressure chamber with the high pressure chest of compression zone respectively, each parts are all welded in sensor base, integral in the encapsulating structure that is encapsulated in and there is silicon oil infilling liquid of suspending, impressed pressure is delivered to differential pressure Sensitive Apparatus and static pressure compensation unit by the silicon oil infilling liquid of sensor internal, realizes high precision differential pressure signal and measures and static pressure error compensation.
This silicon substrate pressure sensor, adopt microelectronics and micromachined integration technology to make, precision is high, good stability, reliability are high, consistance good, is easy to produce in enormous quantities.The silicon-sensitive chip movable plate of the differential pressure Sensitive Apparatus of this silicon substrate pressure sensor adopts single crystal silicon material to make, upper and lower glass fixed polar plate adopts glass material to make, adopt the sealing interconnection techniques such as electrostatic sealing-in that silicon-sensitive chip movable plate, upper and lower glass fixed polar plate, glass film plates, connecting pipe are linked together, form stable performance, reliably differential capacitive structure, form the differential pressure Sensitive Apparatus part of silicon substrate pressure sensor.The static pressure compensation unit of this silicon substrate pressure sensor, silicon pressure drag chip and the sealing-in of nonporous glass vacuum static electricity is adopted to form, form the absolute pressure element with vacuum-sealed cavity, and adopt 4 suspended patterns to be bonded in differential pressure Sensitive Apparatus upper surface near sintering lead-in wire side, in order to the static pressure value of measure field.The encapsulating structure of this silicon substrate pressure sensor is then be made up of sensor base, impulse conduit, wire holder etc., employing suspension structure designs, differential pressure Sensitive Apparatus and static pressure compensation unit are all suspended be encapsulated in the pressurized cavity of sensor-packaging structure, make the Static compression performance of sensor, tolerance, stability, better reliability.This silicon substrate pressure sensor, with its many technical advantage, can meet the demand of industrial automation control system to high-precision pressure sensor well, has wide development and application prospect.
Accompanying drawing explanation
Fig. 1 is silicon substrate pressure sensor structural representation;
Differential pressure Sensitive Apparatus and static pressure compensation unit combined type stepped construction schematic diagram in the empty frame of Fig. 2;
Fig. 3 is differential pressure Sensitive Apparatus silicon-sensitive chip movable plate vertical view in Fig. 2;
Fig. 4 is differential pressure Sensitive Apparatus silicon-sensitive chip movable plate front section view in Fig. 3;
Fig. 5 is differential pressure Sensitive Apparatus glass fixed polar plate vertical view in Fig. 2;
Fig. 6 is differential pressure Sensitive Apparatus glass film plates schematic diagram in Fig. 2;
Fig. 7 is static pressure compensation cellular construction schematic diagram;
Fig. 8 is the Wheatstone bridge schematic diagram that the presser sensor resistance 18r of static pressure compensation unit is formed;
Fig. 9 is encapsulating structure wire holder cut-open view of the present invention;
Figure 10 is encapsulating structure wire holder vertical view of the present invention.
Embodiment
Silicon substrate pressure sensor of the present utility model, is shown in Fig. 1, is made up of differential pressure Sensitive Apparatus 12, static pressure compensation unit 18 and encapsulating structure three part.See Fig. 2, differential pressure Sensitive Apparatus 12, it is characterized in that being encapsulated formed by upper glass fixed polar plate 2, silicon-sensitive chip movable plate 1, lower-glass fixed polar plate 2 ', glass film plates 3, connecting pipe 4 successively from top to bottom, form differential capacitive structure, in order to complete the collection of differential pressure signal, it is the core of silicon substrate pressure sensor.Static pressure compensation unit 18 adopts 4 gluing suspensions to be fixed in differential pressure Sensitive Apparatus 12 upper surface close sintering lead-in wire 10 side, forms combined type stepped construction, for the static pressure value of measure field with differential pressure Sensitive Apparatus 12; Encapsulating structure: comprise sensor base 5, two impulse conduits 16 and two adaptors 17, wire holders 10 ', upper and lower end cap 13,14.
In the structure of differential pressure Sensitive Apparatus 12, the central island 8 of silicon-sensitive chip movable plate 1 is identical with the gap length of upper and lower glass fixed polar plate 2,2 '; Upper and lower glass fixed polar plate 2,2 ' has metal electrode layer 6 relative to silicon-sensitive chip movable plate 1 central island 8 position, upper and lower glass fixed polar plate 2,2 ', glass film plates 3 all has pressure guide hole 7, the pressure guide hole 7 on lower-glass fixed polar plate 2 ' and glass film plates 3 all communicates with the connecting pipe 4 in sensor base 5; The inwall of pressure guide hole 7 has splash-proofing sputtering metal layer, as the electrode extraction channel of the metal electrode layer 6 of upper and lower glass fixed polar plate 2,2 ', ensures that metal electrode layer 6 is drawn from pressure guide hole 7; Upper glass fixed polar plate 2, silicon-sensitive chip movable plate 1 and glass film plates 3 all there is pressure welding point 9, the size of silicon-sensitive chip movable plate 1 and glass film plates 3 is greater than the size of upper and lower glass fixed polar plate 2,2 ', the pressure welding point 9 of silicon-sensitive chip movable plate 1 is stretched out, ensures the realization of pressure welding lead-in wire; Metal level is had at glass film plates 3 one edge, be connected as the metal electrode layer 6 of metal crimp solder joint 9 with the lower-glass fixed polar plate 2 ' above it, wire holder 10 ' in sensor base 5 draws sintering lead-in wire 10, connect pressure welding point 9 and corresponding sintering lead-in wire 10 with Si-Al wire line 11, the electric capacity of differential pressure Sensitive Apparatus 12 output signal is drawn out on the sintering lead-in wire 10 of sensor base 5 correspondence.
The silicon-sensitive chip movable plate 1 of described differential pressure Sensitive Apparatus 12 adopts island membrane structure, and material is the silicon single crystal flake of twin polishing, adopts miromaching to make, sees Fig. 3 and Fig. 4, be made up of central island 8, film district 8a, Support 8b tri-part.Central island 8 and silicon-sensitive chip movable plate 1 are integrated, be positioned at the center of silicon-sensitive chip movable plate 1, the center convex surface that its two sides relative film district 8a groove is formed is central island 8, there is dense phosphorus heavily doped layer 8d and silicon dioxide insulating layer 8c on central island 8 surface, and upper and lower surface take central plane as the symmetrical structure of the plane of symmetry.When there being impressed pressure to act on the upper or lower surface of central island 8, central island 8 film district deformation around it is bending, can move up and down, central island 8 is caused to change relative to the gap of glass fixed polar plate 2,2 ', and then the sensitization capacitance that the electrode layer 6 on silicon-sensitive chip movable plate 1 central island 8 and two glass fixed polar plates 2,2 ' is formed changes, this change can be used for detecting the change of impressed pressure.
Upper and lower glass fixed polar plate 2,2 ' is double glazed glass, sees Fig. 5, and the heart has through hole to be pressure guide hole 7 wherein, the metal electrode layer 6 having sputtered aluminum to be formed on its surface, and reserves edge; The inwall sputtering of the pressure guide hole 7 at upper and lower glass fixed polar plate 2,2 ' center has metal level, as the electrode extraction channel of upper and lower glass fixed polar plate 2,2 ' electrode layer 6.Glass film plates 3 is similar with upper and lower glass fixed polar plate 2,2 ' profile, see Fig. 5, Fig. 6, its distinguishing characteristics is also there is splash-proofing sputtering metal layer as pressure welding point 9 at glass film plates 3 one edge, adopt electrically conducting adhesive to be connected between lower-glass fixed polar plate 2 ' with glass film plates 3, indirectly the metal electrode layer 6 of lower-glass fixed polar plate 2 ' is drawn out on the metal crimp solder joint 9 of glass film plates 3; Silicon-sensitive chip movable plate 1, upper glass fixed polar plate 2 and glass film plates 3 all there is pressure welding point 9, respectively as silicon-sensitive chip movable plate 1, the electrode leads to client of upper and lower glass fixed polar plate 2,2 '.Above-mentioned silicon-sensitive chip movable plate 1 and upper and lower glass fixed polar plate 2,2 ' are symmetrical glass-silicon-glass structure, glass and silicon adopt the multilayer electrostatic sealing-in technique of free sticky company to realize Hard link, the size of silicon-sensitive chip movable plate 1 and glass film plates 3 is greater than the size of upper and lower glass fixed polar plate 2,2 ', see Fig. 2, the pressure welding point 9 of silicon-sensitive chip movable plate 1 is stretched out, ensure Si-Al wire lead-in wire 11 and corresponding sintering go between 10 connection.Glass film plates 3 and connecting pipe 4 adopt electrostatic sealing-in technique to link together, and adopt welding technology, realize being tightly connected between connecting pipe 4 and sensor base 5.Lead key closing process Si-Al wire lead-in wire 11 is adopted to connect the structural representation that pressure welding point 9 and the upper corresponding sintering lead-in wire 10: Fig. 9 of wire holder 10 ' and Figure 10 are wire holders 10 ', sintering lead-in wire 10 on wire holder 10 ' comprises 7 sintering lead-in wire 10a ~ 10g, wherein sintering lead-in wire 10a, 10b, 10c adopts Si-Al wire 11 to be connected with the pressure welding point 9 of differential pressure Sensitive Apparatus 12, realizes the extraction of the capacitance signal of differential pressure Sensitive Apparatus 12.
The structure of static pressure compensation unit 18: see Fig. 7, described static pressure compensation unit 18 is formed by silicon pressure drag chip 18a and the sealing-in of nonporous glass 18b vacuum static electricity, forms the absolute pressure element with vacuum-sealed cavity 18c, in order to the static pressure value of measure field, silicon pressure drag chip 18a upper surface becomes 4 presser sensor resistance 18r in design attitude micromachined, i.e. R1, R2, R3, R4 connects into Wheatstone bridge, see Fig. 8, the silicon pressure drag chip 18a back side processes cavity, glass 18b is thrown at the silicon 18a back side and atresia pair fold up and down, and vacuum static electricity seals, form the static pressure compensation unit 18 with vacuum-sealed cavity 18c, the corner, edge of the glass bottom surface 18d of the static pressure compensation unit 18 after sealing-in adopts tackifier to suspend and is bonded in close sintering lead-in wire 10 side of glass fixed polar plate 2 on differential pressure Sensitive Apparatus 12, with differential pressure Sensitive Apparatus 12 integrated formation combined type stepped construction, be placed in the pressurized cavity of sensor base 5, be encapsulated in by the silicon oil infilling liquid of metal isolation diaphragm isolating seal, in order to the static pressure value of accurate stably measure field.The output signal of static pressure compensation unit 18 adopts lead key closing process Si-Al wire lead-in wire 11 to connect pressure welding point 9 and the upper corresponding sintering lead-in wire 10 of wire holder 10 ': see Fig. 9 and Figure 10, sintering lead-in wire 10d on wire holder 10 ', 10e, 10f, 10g respectively with the input end IN+ of static pressure compensation unit 18, IN-, output terminal out1, out2 adopts Si-Al wire 11 to connect through pressure welding point 9, realizes the extraction of the voltage signal of static pressure compensation unit 18, and is connected with rear portion compensation deals circuit.Compensation deals circuit in rear portion described herein is user's subsequent processing units of this sensor output signal.
The encapsulating structure of described silicon substrate pressure sensor, comprise sensor base 5, two impulse conduits 16 and two adaptors 17, wire holder 10 ', on, bottom end cover 13 and 14, see Fig. 1, it is characterized in that in sensor base 5, stage casing is oppositely arranged, bottom end cover 13, 14, described combined type stepped construction is placed in, bottom end cover 13, between 14, and pad in the gap of combined type stepped construction and pedestal 5 with filling ceramic block 15, again by the connecting pipe 4 below differential pressure Sensitive Apparatus 12 by combined type stepped construction suspend be welded on there is silicon oil infilling liquid encapsulating structure in, wire holder 10 ' is positioned at one end of pedestal 5, sintering lead-in wire 10 on it is respectively used to electric capacity output signal and the voltage output signal of drawing differential pressure Sensitive Apparatus 12 and static pressure compensation unit 18.Two positive and negative chamber impulse conduits 16 are placed in the other end of pedestal 5 by adaptor 17, be connected with low pressure chamber with the high pressure chest of compression zone respectively, each parts are all welded in sensor base 5, integral in the encapsulating structure that is encapsulated in and there is silicon oil infilling liquid of suspending, impressed pressure is delivered to differential pressure Sensitive Apparatus 12 and static pressure compensation unit 18 by the silicon oil infilling liquid of sensor internal, realizes high precision differential pressure signal and measures and static pressure error compensation.
Claims (6)
1. a silicon substrate pressure sensor, be made up of differential pressure Sensitive Apparatus (12), static pressure compensation unit (18), encapsulating structure three part, it is characterized in that differential pressure Sensitive Apparatus (12) adopts differential capacitive structure: encapsulated formed, for gathering differential pressure signal by upper glass fixed polar plate (2), silicon-sensitive chip movable plate (1), lower-glass fixed polar plate (2 '), glass film plates (3), connecting pipe (4) successively from top to bottom, static pressure compensation unit (18): adopt 4 gluing suspensions to be fixed on differential pressure Sensitive Apparatus (12) upper surface near sintering lead-in wire (10) side, combined type stepped construction is formed, for the static pressure value of measure field with differential pressure Sensitive Apparatus (12), encapsulating structure: comprise sensor base (5), two impulse conduits (16) and adaptor (17), wire holder (10 '), on, bottom end cover (13, 14), sensor base (5) interior stage casing is oppositely arranged, bottom end cover (13, 14), described combined type stepped construction is placed in, bottom end cover (13, 14) between, and welded with sensor base (5) by the connecting pipe (4) of differential pressure Sensitive Apparatus (12) below, suspend be encapsulated in there is silicon oil infilling liquid encapsulating structure in, fill ceramic block (15) pad in the gap of combined type stepped construction and sensor base (5), wire holder (10 ') is welded on one end of sensor base (5), two impulse conduits (16) are welded on the other end of sensor base (5) by adaptor (17), each parts of encapsulating structure are all welded in sensor base (5) integral, two impulse conduits (16) are connected with low pressure chamber with the high pressure chest of compression zone respectively, impressed pressure is delivered to differential pressure Sensitive Apparatus (12) and static pressure compensation unit (18) by the silicon oil infilling liquid of sensor internal, realizes high precision differential pressure signal and measures and static pressure error compensation.
2. silicon substrate pressure sensor according to claim 1, is characterized in that silicon-sensitive chip movable plate 1 adopts island membrane structure, by central island (8), film district (8a), Support (8b) three part form; Central island (8) and silicon-sensitive chip movable plate (1) are integrated, be positioned at the center of silicon-sensitive chip movable plate (1), the center convex surface that its two sides relative film district (8a) groove is formed is central island (8), there are the heavily doped layer of dense phosphorus (8d) and silicon dioxide insulating layer (8c) in central island (8) surface, and upper and lower surface take central plane as the symmetrical structure of the plane of symmetry; When there being impressed pressure to act on the upper or lower surface of central island (8), central island (8) film district deformation around it is bending, can move up and down.
3. silicon substrate pressure sensor according to claim 1, it is characterized in that the pressure welding point (9) on glass film plates (3): have metal level at glass film plates (3) edge, be connected with the metal electrode layer (6) of the lower-glass fixed polar plate (2 ') above it as pressure welding point (9); Be connected by electrically conducting adhesive between lower-glass fixed polar plate (2 ') with glass film plates (3), indirectly the metal electrode layer (6) of lower-glass fixed polar plate (2 ') be drawn out on the metal crimp solder joint (9) of glass film plates (3).
4. silicon substrate pressure sensor according to claim 1, it is characterized in that the size of silicon-sensitive chip movable plate (1) and glass film plates (3) is greater than the size of upper and lower glass fixed polar plate (2,2 '), the pressure welding point (9) of silicon-sensitive chip movable plate (1) is stretched out, ensures the realization of pressure welding lead-in wire.
5. silicon substrate pressure sensor according to claim 1, it is characterized in that in differential pressure sensitive device structure, the central island (8) of silicon-sensitive chip movable plate (1) is identical with the gap length of upper and lower glass fixed polar plate (2,2 ').
6. silicon substrate pressure sensor according to claim 1, is characterized in that the structure of static pressure compensation unit (18): described static pressure compensation unit (18) is formed by silicon pressure drag chip (18a) and the sealing-in of nonporous glass (18b) vacuum static electricity, silicon pressure drag chip (18a) upper surface becomes 4 presser sensor resistance (18r) i.e. R1 in design attitude micromachined, R2, R3, R4, connect into Wheatstone bridge, silicon pressure drag chip (18a) lower surface has cavity, glass (18b) is thrown at silicon (18a) back side and atresia pair fold up and down, and vacuum static electricity seals, formation has the static pressure compensation unit (18) of vacuum-sealed cavity (18c), the corner, edge of the glass bottom surface (18d) of static pressure compensation unit (18) is adhesive in the upper surface of differential pressure Sensitive Apparatus (12) near sintering lead-in wire (10) side, with differential pressure Sensitive Apparatus (12) integrated formation combined type stepped construction, be placed in the pressurized cavity of sensor base (5), be encapsulated in by the silicon oil infilling liquid of metal isolation diaphragm isolating seal, in order to the static pressure value of measure field.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520696017.5U CN204924513U (en) | 2015-09-09 | 2015-09-09 | Silica -based pressure sensor |
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| CN201520696017.5U CN204924513U (en) | 2015-09-09 | 2015-09-09 | Silica -based pressure sensor |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105181187A (en) * | 2015-09-09 | 2015-12-23 | 沈阳仪表科学研究院有限公司 | Silicon-based pressure sensor and manufacturing method thereof |
| CN106802199A (en) * | 2016-12-27 | 2017-06-06 | 吴中区穹窿山德毅新材料技术研究所 | Novel sensor |
| CN106960067A (en) * | 2016-01-08 | 2017-07-18 | 中兴通讯股份有限公司 | A kind of electronic installation, the compensation method of stress sensitive parameter and system |
| CN107907263A (en) * | 2017-12-13 | 2018-04-13 | 沈阳市传感技术研究所 | The capacitive pressure transducer of electrode single-end suspension |
| CN107941412A (en) * | 2017-12-13 | 2018-04-20 | 沈阳市传感技术研究所 | Suspend absolute differential pressure pick-up entirely |
| CN114314503A (en) * | 2021-12-31 | 2022-04-12 | 深圳市信为科技发展有限公司 | Packaging method of pressure sensor with fine multi-lead |
| CN115628862A (en) * | 2022-12-22 | 2023-01-20 | 国机传感科技有限公司 | Pressure sensor corrugated diaphragm welding seam leakage detection device and leakage detection method |
| GB2622498A (en) * | 2023-09-01 | 2024-03-20 | Sinomach Sensing Tech Co Ltd | Leak detection apparatus and method for weld of corrugated diaphragm of pressure sensor |
-
2015
- 2015-09-09 CN CN201520696017.5U patent/CN204924513U/en not_active Withdrawn - After Issue
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105181187A (en) * | 2015-09-09 | 2015-12-23 | 沈阳仪表科学研究院有限公司 | Silicon-based pressure sensor and manufacturing method thereof |
| CN106960067A (en) * | 2016-01-08 | 2017-07-18 | 中兴通讯股份有限公司 | A kind of electronic installation, the compensation method of stress sensitive parameter and system |
| CN106960067B (en) * | 2016-01-08 | 2021-11-12 | 中兴通讯股份有限公司 | Electronic device, and method and system for compensating stress sensitive parameters |
| CN106802199A (en) * | 2016-12-27 | 2017-06-06 | 吴中区穹窿山德毅新材料技术研究所 | Novel sensor |
| CN107907263A (en) * | 2017-12-13 | 2018-04-13 | 沈阳市传感技术研究所 | The capacitive pressure transducer of electrode single-end suspension |
| CN107941412A (en) * | 2017-12-13 | 2018-04-20 | 沈阳市传感技术研究所 | Suspend absolute differential pressure pick-up entirely |
| CN107907263B (en) * | 2017-12-13 | 2023-06-16 | 沈阳市传感技术研究所 | Capacitive pressure sensor with electrode suspended at single end |
| CN107941412B (en) * | 2017-12-13 | 2023-09-22 | 沈阳市传感技术研究所 | Full-suspension absolute differential pressure sensor |
| CN114314503A (en) * | 2021-12-31 | 2022-04-12 | 深圳市信为科技发展有限公司 | Packaging method of pressure sensor with fine multi-lead |
| CN115628862A (en) * | 2022-12-22 | 2023-01-20 | 国机传感科技有限公司 | Pressure sensor corrugated diaphragm welding seam leakage detection device and leakage detection method |
| GB2622498A (en) * | 2023-09-01 | 2024-03-20 | Sinomach Sensing Tech Co Ltd | Leak detection apparatus and method for weld of corrugated diaphragm of pressure sensor |
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Granted publication date: 20151230 Effective date of abandoning: 20180710 |
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| AV01 | Patent right actively abandoned |