CN105181187B - Silicon substrate pressure sensor and its manufacturing method - Google Patents
Silicon substrate pressure sensor and its manufacturing method Download PDFInfo
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- CN105181187B CN105181187B CN201510571202.6A CN201510571202A CN105181187B CN 105181187 B CN105181187 B CN 105181187B CN 201510571202 A CN201510571202 A CN 201510571202A CN 105181187 B CN105181187 B CN 105181187B
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Abstract
Silicon substrate pressure sensor and its manufacturing method, sensor is made of differential pressure Sensitive Apparatus, static pressure compensation unit, encapsulating structure, differential pressure Sensitive Apparatus uses differential capacitive structure, it is characterized in that being encapsulated successively by upper glass fixed polar plate, silicon-sensitive chip movable plate, lower glass fixed polar plate, glass film plates, connecting pipe from top to bottom；Static pressure compensation unit measures static pressure magnitude using the silicon pressure drag chip of absolute pressure encapsulation, it is characterized in that it is fixed on using point type suspended pattern above differential pressure Sensitive Apparatus, signal drift amount is small, saves space and differential pressure Sensitive Apparatus forms the suspension of combined type stepped construction and is welded in encapsulating structure.Encapsulating structure includes sensor base, impulse conduit, wire holder etc., it is characterized in that it uses floated structure design, the composite construction suspension of differential pressure, static pressure is encapsulated in sensor base, wire holder is located at pedestal one end, impulse conduit is located at the pedestal other end, and all parts are welded in sensor base integrally by improved welding procedure.
Description
Technical field
The invention belongs to sensor technical fields, are specifically made of microelectronics and micromachined integration technology
Silicon substrate pressure sensor and its manufacturing method.
Background technology
With the high speed development of sensor technology, the application of silicon substrate pressure sensor is more and more extensive, and gradually to high-precision
Degree, high stability, high reliability, networking, intelligence, integrated direction development；Wherein capacitive silicon substrate pressure sensor with
The prominent technical advantage such as its high-precision, high stable, highly reliable, which is acknowledged as a new generation, has the novel of broad based growth future
Silicon substrate pressure sensor is the indispensable critical component of automation control area.Capacitive silicon substrate pressure sensor utilizes electricity
Hold principle and measure pressure, made using single crystal silicon material, and using microelectronics and micromachined integration technology, be a kind of novel
Structural type force-sensing parts, since there is no the electric isolution problem of PN junction, therefore its measurement accuracy, stability, reliability etc.
All there is apparent technical advantage.But due to by factors such as raw material state, technological equipment condition, the integrities of processing technology
It limitation and influences, main problem present in existing silicon substrate pressure sensor manufacturing process is to make that yield rate is relatively low, static pressure
Error has certain dispersion, a weld bond oil leak of encapsulating structure, these problems directly affect the performance of sensor, reliability and into
Product rate plays restrictive function to the popularization and application of this silicon substrate pressure sensor.
Invention content
The object of the present invention is to provide a kind of silicon substrate pressure sensor and its manufacturing methods, it is ensured that the static pressure of sensor is special
Property, tolerance, stability, better reliability.
The silicon substrate pressure sensor of the present invention, by differential pressure Sensitive Apparatus, static pressure compensation unit, encapsulating structure three parts group
Into it is characterized in that differential pressure Sensitive Apparatus uses differential capacitive structure：From top to bottom successively by upper glass fixed polar plate, silicon-sensitive core
Piece movable plate, lower glass fixed polar plate, glass film plates, connecting pipe encapsulate, for acquiring differential pressure signal；Static pressure compensation list
Member：Differential pressure Sensitive Apparatus upper surface is fixed on close to sintering lead side using 4 gluing suspended patterns, with differential pressure Sensitive Apparatus
Combined type stepped construction is formed, for the static pressure magnitude of measure field；Encapsulating structure：It is led including sensor base, two impulses
Pipe and adapter, wire holder, upper and lower end cap, stage casing is oppositely arranged upper and lower end cap in sensor base, and the combined type is laminated
Structure is placed between upper and lower end cap, and is passed through the connecting pipe below differential pressure Sensitive Apparatus and welded with sensor base, and suspend encapsulation
In the encapsulating structure with silicon oil infilling liquid, filling ceramic block pad is in the gap of combined type stepped construction and sensor base
In, wire holder is welded on one end of sensor base, and two impulse conduits are welded on the other end of sensor base by adapter,
Each component of encapsulating structure is welded in sensor base integrally.Two impulse conduits respectively with the high pressure chest of compression zone and low
Pressure chamber is connected, and impressed pressure is transmitted to differential pressure Sensitive Apparatus and static pressure compensation unit by the silicon oil infilling liquid of sensor internal,
Realize that high-precision differential pressure signal measures and static pressure error compensates.
The manufacturing method of above-mentioned silicon substrate pressure sensor is as follows：It is characterized in that the manufacturing method of differential pressure Sensitive Apparatus：
The differential pressure Sensitive Apparatus is that silicon-sensitive chip movable plate is placed among upper and lower glass fixed polar plate, with double
Electrostatic sealing-in technique seals tri-electrode simultaneously in face, forms symmetrical three-decker, then by glass film plates and connecting pipe
Electrostatic sealing-in is carried out, three-decker with glass film plates by electrically conducting adhesive bonding is connected later, forms differential pressure Sensitive Apparatus；
There is pressure guide hole on upper and lower glass fixed polar plate, glass film plates, the pressure guide hole on lower glass fixed polar plate and glass film plates is with putting
It communicates in the connecting pipe in sensor base, has on upper glass fixed polar plate, silicon-sensitive chip movable plate and glass film plates
Pressure welding point is drawn out on the corresponding sintering lead of wire holder by pressure welding point using lead key closing process.
The manufacturing method of the silicon-sensitive chip movable plate of the differential pressure Sensitive Apparatus is：
Once oxidation is done to twin polishing monocrystalline silicon piece, carries out positive and negative photoetching respectively later, it is positive and negative to erode silicon chip
Face central island and the silica in film area, and selective anisotropic corrosion is carried out with tetramethyl ammonium hydroxide solution, form electricity
Hold gap, remove shielding silica；Secondary oxidation is carried out to silicon chip again, the positive and negative facial mask area of photoetching, erodes film area respectively
Silica, be carried out at the same time anisotropic etch with potassium hydroxide solution is two-sided to film area, form film area；Silicon chip is carried out dense
Phosphorus heavy doping, heavy doping technological parameter are：Diffusion temperature T=900~1000 DEG C, 30~50 minutes diffusion times, then expand temperature
900~1000 DEG C, time 60+30+60 minute, final square resistance is between 14.2~14.8 ohm；Silicon chip is carried out again
It aoxidizes three times, photoetching central island, silicon dioxide insulating layer is formed at central island position；Sputtered aluminum again, photoetching silicon-sensitive chip can
Movable plate electrode electrode leads to client, that is, pressure welding point, then carry out silico-aluminum；Finally large stretch of silicon single crystal flake is drawn by designed size
Piece is divided into the chip unit of independent silicon-sensitive chip movable plate.
The manufacturing method of the upper and lower glass fixed polar plate of the differential pressure Sensitive Apparatus is：It cleans, in glass fixed pole backboard
Face mask splash-proofing sputtering metal aluminium layer, later front progress electrode pattern photoetching leave non-electrode region photoresist, again positive sputtered aluminum
Layer gets rid of photoresist and aluminium film, electrode zone one other than electrode district using the method for organic solvent immersion plus ultrasonic vibration
Secondary property electrode moulding forms the metal electrode layer of upper and lower glass fixed polar plate.
The manufacturing method of the silicon substrate pressure sensor, it is characterised in that the manufacture of static pressure compensation unit and assembly method：
Static pressure compensation unit is to be folded to fall simultaneously vacuum static electricity sealing-in into vacuum-sealed cavity up and down with nonporous glass by silicon pressure drag chip
Absolute pressure element；The gluing suspension of absolute pressure element bottom surface 4 is bonded in differential pressure Sensitive Apparatus upper surface close to sintering lead side, shape
Into combined type stepped construction；
The manufacturing method of the silicon substrate pressure sensor, it is characterised in that silicon substrate pressure sensor assembling process：
The wire holder of encapsulating structure is welded in sensor base by step 1, and polishing, polishing weld bond, remove flash removed before welding
And contamination；Technique welding is connect using two step DC argon arc weldings：First butt welding mouth is once welded, after being cooled to room temperature, then into
The secondary welding of row weld bond, welding parameter are：Argon flow amount is 35~45SCFH, 30~40A of welding current, welds revolution 4-
6RPM, starting current 15A.
Combined type stepped construction is welded in sensor base by step 2 by the connecting pipe below differential pressure Sensitive Apparatus：
With filling ceramic block pad in the gap of combined type stepped construction and pedestal, using the weld bond processing method described in step 1 and weldering
Connect technique welding.
The output signal end of differential pressure Sensitive Apparatus and static pressure compensation unit is drawn out to by step 3 using lead key closing process
On the corresponding sintering lead of wire holder, and it is connected with rear portion compensation deals circuit.
Step 4, the upper and lower end cap by encapsulating structure are welded using the weld bond processing method described in step 1 and welding procedure
Onto sensor base.
Step 5, by two impulse conduits respectively by two adapters, using the weld bond processing method described in step 1 and
Welding procedure is welded in sensor base.
The positive effect of the present invention is：
1st, the present invention is manufactured for the differential pressure Sensitive Apparatus of silicon substrate pressure sensor, it is proposed that a kind of new glass fixed pole
The process implementation method of plate.Then the manufacture of glass fixed polar plate is selectively protected using electrode pattern photoetching is first carried out
The photoresist except electrode zone, then sputtered aluminum are stayed, is then impregnated using organic solvent plus the physical method of ultrasonic vibration removes
Aluminium film and photoresist except electrode district, electrode zone one-pass molding make electrode zone be no longer influenced by the shadow of subsequent machining technology
It rings.And the manufacturing method of conventional glass fixed polar plate is：First to glass fixed polar plate double-faced sputter aluminium, then to glass pole plate
Front carries out electrode pattern photoetching, then puts the aluminium film of photoresist protection through-hole side wall, wet chemistry by hand at glass through-hole position
The aluminium film except electrode zone is eroded, wipes deposit, the removing of photoresist by plasma after chemical attack aluminium, final electrode molding.This
The manufacturing method of the glass fixed polar plate of invention is compared with conventional manufacturing method, eliminates the position craft dispensing of glass pole plate through-hole
Protection and the two-step process of wet chemical etching technique aluminium film, that is, simplify technique, and overcome the deficiency of common process, make glass pole
Plate electrode makes yield rate and promotes nearly 100% less than 50% by original, and the reliability of pad electrode connection is also greatly
It is promoted.The only improved good effect of this step process is as follows：
A, it avoids manual dispensing glued membrane easily to spill into except electrode district, occurs burrs on edges or outside after electrode moulding
The problem of bridging causes short circuit of polar after sealing-in, leads to component failure.
B, the undercutting problem easily occurred during wet chemical etching technique aluminium film is avoided, so as to efficiently avoid through-hole side
Edge spike position or side wall break aluminium, greatly improve the reliability of device electrical connection.
C, avoid corrosion aluminium after wiping cause electrode surface scratch, through-hole edge spike break aluminium the problems such as；
D, the aluminium electrode caused by avoiding the prolonged removing of photoresist by plasma (manual dispensing glued membrane is thicker) on glass pole plate
The problem of oxidation, the electrode conductivuty so as to generate declines and pressure welding yield rate reduces.
2nd, the invention also provides a kind of process implementation methods for improving differential pressure Sensitive Apparatus stability：It is i.e. quick in making silicon
During sense chip movable plate, on the make before the silicon dioxide insulating layer on heart island, it is heavily doped to the dense phosphorus of silicon movable plate to increase by a step
General labourer's skill forms the heavily doped layer of low-resistance, it is therefore an objective to reduce the resistivity of silicon chip, make the metallic aluminium subsequently sputtered in silicon chip surface
Film, that is, form good Ohmic contact between metal pressure-welding point energy and silicon chip, it is ensured that silicon-sensitive chip movable plate electrode was drawn can
By property, ensure to form good Ohmic contact between metal aluminium electrode and silicon chip, be effectively improved the steady of differential pressure Sensitive Apparatus
It is qualitative；
3rd, the positive effect of the present invention is also resided in the assembly method of static pressure compensation unit, using adhesive by static pressure compensation
4 point type suspended pattern of unit is bonded in above differential pressure Sensitive Apparatus and is formed again close to sintering lead side and differential pressure Sensitive Apparatus
Box-like stepped construction, adhesive spots are located at absolute pressure element bottom edge quadrangle, and the bonding region gross area is less than absolute pressure element bottom surface face
Long-pending a quarter, the non-adhering area bottom surface of static pressure compensation unit are not adhered on differential pressure Sensitive Apparatus on glass fixed polar plate,
Not only make static pressure compensation unit performance influenced by outer enclosure structure it is small, but also make its to vibration have very high resistance
Power, signal drift significantly reduce, and realize the high stable of static pressure signal, high precisely acquisition.Utilize the static pressure of static pressure compensation unit
Measured value compensates the differential pressure measurement value of differential pressure Sensitive Apparatus, realizes the static pressure error compensation of silicon substrate pressure sensor, has
It solves the problems, such as static pressure error dispersion to effect, improves the synthesis precision of sensor.In addition, the static pressure compensation unit and differential pressure
The stacked composite construction that Sensitive Apparatus is formed is placed in the compression cavity of sensor base, is encapsulated in by metal isolation diaphragm
It is compact-sized in the silicon oil infilling liquid of isolating seal, space is saved, does not increase encapsulating structure accessory.
4th, the positive effect of the present invention is also resided on the welding manner of encapsulating structure part：To encapsulating structure part wire holder, lead
The welding of pressure pipe, end cap, impulse conduit is gone before all using weldering with the method for the abrasive paper for metallograph sanding and polishing weld bond of 1200 mesh of granularity
Except weld bond burr and contamination, the sand holes and spot of weld seam appearance after welding are efficiently solve the problems, such asd；DC argon arc welding connect by
Two circle of one-time continuous welding originally is changed to two circle substep secondary weldings：Weld bond is first once welded, is cooled to room
Wen Hou, then carry out the secondary welding of weld bond not only makes the pressure-sensitive inductor component of encapsulating structure internal difference and the temperature suffered by static pressure compensation unit
Degree impact reduces half, reduces the influence to Sensitive Apparatus and static pressure compensation unit performance, and improve the welding of weld bond
Intensity and reliability make it be effectively improved under the premise of not increasing any production cost and being mutually compatible with prior art
The welding quality of sensor makes weld bond Leakage effectively be solved.
This silicon substrate pressure sensor manufactured by the method for the present invention, utilizes microelectronics and micromachined integration technology system
Make, precision is high, stability is good, reliability is high, consistency is good, is easy to produce in enormous quantities, can meet industrial automatic control well
Demand of the system processed to high-precision pressure sensor has wide development and application prospect.
Description of the drawings
Fig. 1 is silicon substrate pressure sensor structure diagram；
It is differential pressure Sensitive Apparatus and static pressure compensation unit combined type stepped construction schematic diagram in Fig. 2 dashed boxes；
Fig. 3 is differential pressure Sensitive Apparatus silicon-sensitive chip movable plate vertical view in Fig. 2；
Fig. 4 is differential pressure Sensitive Apparatus silicon-sensitive chip movable plate front section view in Fig. 3；
Fig. 5 is differential pressure Sensitive Apparatus silicon-sensitive chip movable plate manufacturing process flow schematic diagram in Fig. 2；
Fig. 6 is differential pressure Sensitive Apparatus glass fixed polar plate vertical view in Fig. 2；
Fig. 7 is differential pressure Sensitive Apparatus glass film plates schematic diagram in Fig. 2；
Fig. 8 is the upper and lower glass fixed polar plate manufacturing process flow schematic diagram of differential pressure Sensitive Apparatus in Fig. 2；
Fig. 9 is static pressure compensation cellular construction schematic diagram；
Figure 10 is the Wheatstone bridge schematic diagram that the presser sensor resistance 18r of static pressure compensation unit is formed；
Figure 11 is encapsulating structure wire holder sectional view of the present invention；
Figure 12 is encapsulating structure wire holder vertical view of the present invention.
Specific embodiment
As shown in Figure 1, the silicon substrate pressure sensor of the present invention, it is characterised in that：The structure of silicon substrate pressure sensor：By difference
Pressure-sensitive inductor component 12, static pressure compensation unit 18 and encapsulating structure three parts composition.As shown in Fig. 2, the differential pressure Sensitive Apparatus 12,
It is characterized in that from top to bottom successively by upper glass fixed polar plate 2, silicon-sensitive chip movable plate 1, lower glass fixed polar plate 2 ', glass
Glass bottom plate 3, connecting pipe 4 encapsulate, and differential capacitive structure are formed, to complete the acquisition of differential pressure signal.The static pressure is mended
It is by silicon pressure drag chip 18a and nonporous glass 18b vacuum static electricity sealing-ins to repay unit, forms the absolute pressure with vacuum-sealed cavity 18c
Element, to the static pressure magnitude of measure field.Static pressure compensation unit 18 is suspended the upper glass for being fixed on differential pressure Sensitive Apparatus 12
On fixed polar plate 2 combined type stepped construction is formed close to sintering 10 side of lead and differential pressure Sensitive Apparatus 12.As shown in Figure 1, envelope
Assembling structure, including 5, two impulse conduits 16 of sensor base and adapter 17, wire holder 10 ', upper and lower end cap 13 and 14,
Be characterized in that in sensor base 5 that stage casing is oppositely arranged upper and lower end cap 13,14, combined type stepped construction be placed in upper end cover 13 with
Between bottom end cover 14, filling ceramic block 15 is padded in the gap of combined type stepped construction and pedestal 5, which leads to
The connecting pipe 4 crossed below differential pressure Sensitive Apparatus 12, which is suspended, to be welded in the encapsulating structure with silicon oil infilling liquid.Such as Fig. 2 institutes
Show, with Si-Al wire line 11 by the respective pressure welding point 9 of differential pressure Sensitive Apparatus 12 and static pressure compensation unit 18 and adjacent wire holder
10 pressure welding of corresponding sintering lead connection in 10 ', and be connected with rear portion processing circuit.See Fig. 1, wire holder 10 ' is positioned at sensor
5 one end of pedestal, two impulse conduits 16 are placed in 5 other end of sensor base by adapter 17, and each component is welded on sensing
It is integral in device pedestal 5.Two impulse conduits 16 of encapsulating structure are connected respectively with the high pressure chest of compression zone and low pressure chamber, external pressurized
Power is transmitted to differential pressure Sensitive Apparatus 12 and static pressure compensation unit 18 by the silicon oil infilling liquid of sensor internal, realizes that high-precision is poor
Press signal measurement and static pressure error compensation.
The structure of differential pressure Sensitive Apparatus 12 is shown in Fig. 2 in dotted line frame：The central island 8 of silicon-sensitive chip movable plate 1 and its
The gap size of the upper and lower glass fixed polar plate 2,2 ' on two sides is identical；Upper and lower glass fixed polar plate 2,2 ' is relative to silicon-sensitive core
There is metal electrode layer 6 at 1 central island of piece movable plate, 8 position, and upper and lower glass fixed polar plate 2,2 ', the upper of glass film plates 3 are led
Hole 7 is pressed, the pressure guide hole 7 on lower glass fixed polar plate 2 ' and glass film plates 3 is all communicated with the connecting pipe 4 in sensor base 5；
Upper and lower glass fixed polar plate 2,2 ' pressure guide holes 7 inner wall on have splash-proofing sputtering metal layer, as upper and lower glass fixed polar plate 2,2 '
Metal electrode layer 6 electrode extraction channel, ensure metal electrode layer 6 metal pressure-welding point 9 is drawn out to from pressure guide hole 7, wherein,
There is metal pressure-welding point 9 at 3 one edge of glass film plates, electrically conducting adhesive is used between lower glass fixed polar plate 2 ' and glass film plates 3
It is connected, indirectly the metal electrode layer 6 of lower glass fixed polar plate 2 ' is drawn out on the metal pressure-welding point 9 of glass film plates 3；Silicon is quick
Sense chip movable plate 1 is then to make metal pressure-welding point 9 using dense phosphorus heavy doping technique, sputtered aluminum and alloying technology, as
The Ohm contact electrode exit of silicon-sensitive chip movable plate 1；Wire holder 10 ' in sensor base 5 draws sintering lead
10, pressure welding point 9 and sintering lead 10 are connected with Si-Al wire line 11, the output signal of differential pressure Sensitive Apparatus 12 is drawn out to sensing
On the sintering lead 10 of device pedestal 5.
The silicon-sensitive chip movable plate 1 of the differential pressure Sensitive Apparatus 12 uses island membrane structure, Fig. 3 and Fig. 4 is seen, by center
Island 8, film area 8a, Support 8b three parts composition.Central island 8 and silicon-sensitive chip movable plate 1 are integrated, positioned at silicon-sensitive core
The center of piece movable plate 1, the center convex surface that two sides counter film area 8a grooves are formed is central island 8, upper and lower surface be with
Median plane is the symmetrical structure of the plane of symmetry.When there is the upper or lower surface that impressed pressure acts on central island 8, central island 8 is at it
It in the case of the deformation bending of surrounding film area, can move up and down, central island 8 is caused to be sent out relative to the gap of glass fixed polar plate 2,2 '
Changing, and then electrode layer 6 in 1 central island 8 of silicon-sensitive chip movable plate and two glass fixed polar plates 2,2 ' is formed
Sensitization capacitance changes, and this variation can be used for detecting the variation of impressed pressure.
The manufacturing method of silicon-sensitive chip movable plate is：
The material of silicon-sensitive chip movable plate 1 is the silicon single crystal flake of twin polishing, and thickness is 360~420 microns, large stretch of
Silicon single crystal flake can process multiple silicon-sensitive chip movable plates 1 simultaneously by design specification, see Fig. 3,4.Silicon-sensitive chip can
The manufacturing process flow of movable plate electrode is as shown in figure 5, first carry out the twin polishing monocrystalline silicon piece of silicon-sensitive chip movable plate 1
Once oxidation, flow A；Then positive photoetching, removes photoresist, erodes the silica in front side of silicon wafer central island and film area, flow B；
Reverse side photoetching, removes photoresist, the silica in corrosion of silicon reverse side central island and film area, flow C；Using tetramethyl ammonium hydroxide solution
Anisotropic etch is carried out at the same time to silicon chip positive and negative central island and film region, forms capacitance gap, flow D；Again to silicon chip
Secondary oxidation, flow E；Front photoetching film area erodes the silica in film area, flow F；Reverse side photoetching film area again, erodes
The silica in film area, flow G；Anisotropic etch is carried out at the same time using KOH solution is two-sided to film area, forms film area 8a, stream
Journey H；Dense phosphorus heavy doping is carried out to silicon chip, the heavily doped layer 8d, flow I, it is therefore an objective to reduce silicon chip of low-resistance are formed in silicon chip surface
Resistivity, the aluminium film subsequently sputtered is enable to form good Ohmic contact between metal pressure-welding point 9 and silicon chip, it is ensured that silicon
The reliability that sensitive chip movable plate electrode is drawn, heavy doping technological parameter are：Diffusion temperature T=900~1000 DEG C, diffusion
30~50 minutes time, then expand 900~1000 DEG C of temperature, time 60+30+60 minute, final square resistance 14.2~
14.8 between ohm；Silicon chip is aoxidized three times later, photoetching central island, silicon dioxide insulating layer is formed at central island position
8c, flow J；Sputtered aluminum again, photoetching silicon-sensitive chip movable plate electrode leads to client, that is, pressure welding point 9, flow K；Sial is carried out again
Alloying makes to be further formed good ohm between metal pressure-welding point 9 and the silicon chip of low-resistance of silicon-sensitive chip movable plate 1
Contact；Finally large stretch of silicon single crystal flake is split silicon chip, is formed independent silicon-sensitive by designed specification scribing
The chip unit of chip movable plate 1.
Upper and lower glass fixed polar plate 2,2 ' is made by double throwing surface glasses, sees Fig. 6, has through-hole in its center for pressure guide hole 7,
Using electrode pattern photoetching is first carried out, sputtered aluminum disposable electrode is molded again later, is formed on its surface metal electrode layer 6, and
Reserve edge；The inner wall sputtering of pressure guide hole 7 of upper and lower glass fixed polar plate 2,2 ' centers has metal layer, consolidates as upper and lower glass
The electrode extraction channel of fixed plate 2,2 ' electrode layers 6.Glass film plates 3 is similar with upper and lower glass fixed polar plate 2,2 ' appearances, sees figure
6th, Fig. 7, distinguishing characteristics are at 3 one edge of glass film plates also by the use of the metal layer that the method for splash-proofing sputtering metal is formed as pressure welding point
9, it is connected between lower glass fixed polar plate 2 ' and glass film plates 3 using electrically conducting adhesive, indirectly by lower glass fixed polar plate 2 '
Metal electrode layer 6 be drawn out on the metal pressure-welding point 9 of glass film plates 3；Silicon-sensitive chip movable plate 1, upper glass fixed pole
There is pressure welding point 9 on plate 2 and glass film plates 3, respectively as silicon-sensitive chip movable plate 1, upper and lower glass fixed polar plate 2,2 '
Electrode leads to client.Above-mentioned silicon-sensitive chip movable plate 1 and upper and lower glass fixed polar plate 2,2 ' using symmetrical glass-
Si-glass structure realizes Hard link between glass and silicon using the multilayer electrostatic sealing-in technique of free sticky company.Silicon-sensitive chip can
Movable plate electrode 1 and 3 size of glass film plates are more than the size of upper and lower glass fixed polar plate 2,2 ' so that silicon-sensitive chip movable plate 1
Pressure welding point 9 stretch out, ensure the connection of Si-Al wire lead 11 and sintering lead 10.Glass film plates 3 is sealed with connecting pipe 4 using electrostatic
It connects technique to link together, is realized and be tightly connected using welding procedure between connecting pipe 4 and sensor base 5.Using lead key
It closes technique Si-Al wire lead 11 and connects corresponding sintering lead 10 in pressure welding point 9 and wire holder, realize capacitance output signal
It draws.
The manufacturing process flow schematic diagram of upper and lower glass fixed polar plate 2,2 ' is shown in Fig. 8, and manufacturing method is：
Flow a：Surface cleaning processing is carried out to double glazed glass：First use H2SO4：H2O2=3:1 boils, then uses H20：
H2O2:HCL=6:1:1 boils, and finally cleans 30min with deionized water；
Flow b：In glass fixed polar plate backside mask splash-proofing sputtering metal aluminium layer 6a：Thickness is 1200~1500 μm；
Flow c：Positive photo glue 6z is got rid of in glass fixed polar plate front；
Flow d：Electrode pattern photoetching is carried out to glass fixed polar plate front, selectively leaves non-electrode region photoresist
6z, photoetching parameter are：Whirl coating speed 3000~3500 turns/min, 1~2min of time for exposure, 2~3min of developing time.In photoetching
The selection of this tri-consult volume is most important in the process, directly determines the electrode conduction effect of final glass pole plate through-hole.Whirl coating speed
Determine spin coating effect and bondline thickness；Time for exposure and developing time to ensure the through-hole time for exposure fully and development is clean, with
The glue of hole wall is made to remove clean, adhesive force and on-state rate of the guarantee postorder sputtered aluminum layer on hole wall；
Flow e：Aluminium film 6b, 1200~1500 μm of aluminium film thickness are sputtered in glass fixed polar plate front；
Flow f：Prepare glass fixed polar plate metal electrode layer 6：First by step e treated glass fixed polar plate in acetone
1hr is impregnated in solution, later with acetone soln ultrasonic vibration 20min, the photoresist 6z other than getting rid of electrode district with the method
It is molded with aluminium film 6b, electrode zone disposable electrode, that is, forms the electrode layer 6 of upper and lower glass fixed polar plate 2,2 '.
The structure diagram of static pressure compensation unit 18 is as shown in figure 9, silicon pressure drag chip 18a upper surfaces are used in design position
Miromaching forms 4 presser sensor resistance 18r, that is, R1, R2, R3, R4, and R1, R2, R3, R4 are according to cloth shown in Fig. 10
Office connects into Wheatstone bridge；It is characterized in that the static pressure compensation unit is made of miromaching, wherein
Silicon pressure drag chip 18a sizes be 2.75*2.75mm, using ion implanting, annealing activation, again expand oxidation etc. techniques form pressure-sensitive electricity
Resistance.Process cavity with wet chemical etch process at the silicon pressure drag chip 18a back sides, by the silicon chip 18a back sides processed with
Non-porous double throwing glass 18b fold to fall and pass through vacuum static electricity process for sealing up and down to link together, and being formed has vacuum-sealed cavity
The static pressure compensation unit 18 of 18c, to the static pressure magnitude of measure field；As shown in Fig. 2, static pressure compensation unit 18 after sealing-in
The edge quadrangle of glass bottom surface 18d is bonded in the close burning of glass fixed polar plate 2 on differential pressure Sensitive Apparatus 12 using adhesive suspension
10 side of lead is tied, the rubber column gel column 19 that adhesive is formed is located on the glass bottom surface 18d of static pressure compensation unit 18, is symmetrically distributed in side
Edge quadrangle, the bonding region gross area are less than a quarter of the glass bottom surface 18d areas, and the height control of rubber column gel column 19 will meet
The element bottom surface non-adhering areas of 18d is made to be not adhered on the upper glass fixed polar plate 2 of differential pressure Sensitive Apparatus 12, and avoid glass and consolidate
The position of 2 central through hole 7 of fixed plate does not influence 12 pressure-sensitive of differential pressure Sensitive Apparatus of lower section and differential pressure Sensitive Apparatus 12 integrated one
Body forms stacked composite construction and is placed in the compression cavity of sensor base 5, is encapsulated in close by the isolation of metal isolation diaphragm
It is compact-sized in the silicon oil infilling liquid of envelope, space is saved, does not increase encapsulating structure accessory.The output letter of static pressure compensation unit 18
It number is exported, and be connected with rear portion compensation deals circuit by the corresponding sintering lead 10 of wire holder 10 ' by lead key closing process.This
The text rear portion compensation deals circuit is user's subsequent processing units of this sensor output signal.
Silicon substrate pressure sensor assembling process：
Step 1 removes the welded junction part of the wire holder 10 ' of encapsulating structure 1200 mesh abrasive paper for metallograph sanding and polishing of granularity
Wire holder 10 ' is assembled in sensor base 5 by weld bond burr and contamination later, and technique weldering is connect using two step DC argon arc weldings
It connects：First butt welding mouth is once welded, and after being cooled to room temperature, then carries out the secondary welding of weld bond, welding parameter is：Argon gas stream
It measures as 35~45SCFH, 30~40A of welding current, welds revolution 4-6RPM, starting current 15A, wire holder 10 ' is welded to biography
On sensor pedestal 5.
The combined type stepped construction of differential pressure Sensitive Apparatus 12 and static pressure compensation unit 18 is attached to sensor base 5 by step 2
It is interior, it is padded in the gap of combined type stepped construction and pedestal 5 with filling ceramic block 15, using the weld bond processing side described in step 1
The connecting pipe 4 of 12 lower section of method and two step welding procedures welding differential pressure Sensitive Apparatus and the junction weld bond of sensor base 5, will be multiple
Box-like stepped construction is welded in sensor base 5, and differential pressure Sensitive Apparatus 12 and static pressure compensation unit 18 is made all to suspend and is encapsulated in
It is integral in encapsulating structure.
The output signal end of differential pressure Sensitive Apparatus 12 and static pressure compensation unit 18 is by step 3 using lead key closing process
Pressure welding point 9 is drawn out to Si-Al wire on the corresponding sintering lead 10 of wire holder 10 '.Figure 11 and Figure 12 is the structural representation of wire holder
Scheme, the sintering lead 10 on wire holder 10 ' includes 7 sintering lead 10a~10g, wherein sintering lead 10a, 10b, 10c and difference
The electrode leads to client of pressure-sensitive inductor component 12 is connected through pressure welding point 9 using Si-Al wire 11；It is sintered lead 10d, 10e, 10f, 10g difference
With the input terminal IN+, IN-, output terminal out1, out2 of static pressure compensation unit 18 through pressure welding point 9 (see Figure 10, Figure 12) using sial
Silk 11 connects.
Step 4, the weld bond processing method described in by the welded junction part step 1 of the upper and lower end cap 13 and 14 of encapsulating structure
It after processing, is attached in sensor base 5, two end caps 13 and 14 is welded to by sensor using the welding method described in step 1
On pedestal 5.
Two impulse conduits 16 are placed in 5 other end of sensor base by step 5 by two adapters 17 respectively, are used
Impulse conduit 16 is welded in sensor base 5 by weld bond processing method and two welding procedures described in step 1, and each component is equal
It is welded in sensor base 5 integral.
Claims (4)
1. silicon substrate pressure sensor is made of differential pressure Sensitive Apparatus (12), static pressure compensation unit (18), encapsulating structure three parts,
It is characterized in that differential pressure Sensitive Apparatus uses differential capacitive structure：From top to bottom successively by upper glass fixed polar plate (2), silicon-sensitive core
Piece movable plate (1), lower glass fixed polar plate (2 '), glass film plates (3), connecting pipe (4) encapsulate, for acquiring differential pressure letter
Number；Static pressure compensation unit (18)：4 points of suspensions are bonded in close sintering lead (10) side in differential pressure Sensitive Apparatus (12) upper surface,
Combined type stepped construction is formed with differential pressure Sensitive Apparatus (12), for the static pressure magnitude of measure field；Encapsulating structure：Including sensing
Device pedestal (5), two impulse conduits (16) and adapter (17), wire holder (10 '), upper and lower end cap (13,14), sensor base
Seat (5) interior stage casing is oppositely arranged upper and lower end cap (13,14), the combined type stepped construction be placed in upper and lower end cap (13,14) it
Between, and pass through the connecting pipe (4) below differential pressure Sensitive Apparatus (12) and welded with sensor base (5), suspension is encapsulated in silicon
Oil is charged in the encapsulating structure of liquid, and filling ceramic block (15) is padded in the gap of combined type stepped construction and sensor base (5),
Wire holder (10 ') is welded on one end of sensor base (5), and two impulse conduits (16) are welded on sensor by adapter (17)
The other end of pedestal (5), each component of encapsulating structure are welded in sensor base (5) integrally；Two impulse conduits (16)
It is connected respectively with the high pressure chest of compression zone and low pressure chamber, impressed pressure is transmitted to differential pressure by the silicon oil infilling liquid of sensor internal
Sensitive Apparatus (12) and static pressure compensation unit (18) realize that high-precision differential pressure signal measures and static pressure error compensates.
A kind of 2. manufacturing method of silicon substrate pressure sensor described in claim 1, it is characterised in that the differential pressure Sensitive Apparatus
(12) manufacturing method of upper and lower glass fixed polar plate (2,2 ')：
A, surface cleaning processing is carried out to double glazed glass：First use H2SO4：H2O2=3:1 boils, then uses H20：H2O2:HCL=
6:1:1 boils, and finally cleans 30min with deionized water；
B, in glass fixed polar plate backside mask splash-proofing sputtering metal aluminium layer (6a)：Thickness is 1200~1500 μm；
C, positive photo glue (6z) is got rid of in glass fixed polar plate front；
D, electrode pattern photoetching is carried out to glass fixed polar plate front, selectively leaves non-electrode region photoresist (6z), photoetching
Parameter is：Whirl coating speed 3000~3500 turns/min, 1~2min of time for exposure, 2~3min of developing time；
E, in glass fixed polar plate front sputtering aluminium film (6b), 1200~1500 μm of aluminium film thickness；
F, glass fixed polar plate metal electrode layer (6) is prepared：First by step e treated glass fixed polar plate in acetone soln
Impregnate 1hr, later with acetone soln ultrasonic vibration 20min, photoresist (6z) and aluminium other than getting rid of electrode district with the method
Film (6b), the molding of electrode zone disposable electrode form the metal electrode layer (6) of upper and lower glass fixed polar plate (2,2 ').
3. the manufacturing method of silicon substrate pressure sensor according to claim 2, it is characterised in that static pressure compensation unit (18)
Manufacturing method：Design position in silicon chip (18a) upper surface forms 4 presser sensor resistance using miromaching
R1, R2, R3, R4 connect into Wheatstone bridge；It is recessed that with wet chemical etch process the back side is processed at silicon chip (18a) back side
Chamber, by the silicon chip processed (18a) back side with it is non-porous it is double throw glass (18b) fold up and down fall and vacuum static electricity sealing-in into
The static pressure compensation unit (18) of vacuum-sealed cavity (18c), to the static pressure magnitude of measure field；By the static pressure compensation list after sealing-in
The edge quadrangle of the glass bottom surface (18d) of first (18) is bonded in glass on differential pressure Sensitive Apparatus (12) using adhesive suspension and fixes
Pole plate (2) forms combined type stepped construction close to lead (10) side is sintered, with differential pressure Sensitive Apparatus (12), what adhesive was formed
Rubber column gel column (19) is symmetrically distributed in edge quadrangle, the total face of bonding region on the glass bottom surface (18d) of static pressure compensation unit (18)
For product less than a quarter of the glass bottom surface (18d) area, the height control of rubber column gel column (19), which will meet, makes element bottom surface (18d)
Non-adhering area is not adhered on the upper glass fixed polar plate (2) of differential pressure Sensitive Apparatus (12), and avoids glass fixed polar plate (2)
The position of central through hole (7), does not influence differential pressure Sensitive Apparatus (12) pressure-sensitive of lower section, and the stacked composite construction is placed in sensing
In the compression cavity of device pedestal (5), it is encapsulated in the silicon oil infilling liquid by metal isolation diaphragm isolating seal, static pressure compensation list
The output signal of first (18) is exported, and and rear portion by lead key closing process by the corresponding sintering lead (10) of wire holder (10 ')
Compensation deals circuit is connected.
4. the manufacturing method of silicon substrate pressure sensor according to claim 2, it is characterised in that silicon substrate pressure sensor assembles
Process：
The wire holder (10 ') of encapsulating structure is welded in sensor base (5) by step 1, polishing, polishing weld bond, removal before welding
Burr and contamination；Technique welding is connect using two step DC argon arc weldings：First butt welding mouth is once welded, after being cooled to room temperature,
The secondary welding of weld bond is carried out again, and welding parameter is：Argon flow amount is 35~45SCFH, 30~40A of welding current, welds revolution
4-6RPM, starting current 15A；
Combined type stepped construction is welded to sensor base by step 2 by the connecting pipe (4) below differential pressure Sensitive Apparatus (12)
(5) on：It is padded in the gap of combined type stepped construction and pedestal (5) with filling ceramic block (15), using the weld bond described in step 1
Processing method and welding procedure welding；
Step 3 is passed through the output signal end of differential pressure Sensitive Apparatus (12) and static pressure compensation unit (18) using lead key closing process
Pressure welding point (9) is drawn out to Si-Al wire line (11) on the corresponding sintering lead (10) of wire holder (10 '), and sintering lead (10) wraps
7 sintering leads (10a~10g) are included, wherein the electrode of sintering lead (10a, 10b, 10c) and differential pressure Sensitive Apparatus (12) is drawn
End is connected through pressure welding point (9) using Si-Al wire (11)；Be sintered lead (10d, 10e, 10f, 10g) respectively with static pressure compensation unit
(18) input terminal IN+, IN-, output terminal out1, out2 is connected through pressure welding point (9) using Si-Al wire (11)；
Step 4, the upper and lower end cap (13,14) by encapsulating structure, using the weld bond processing method and welding procedure described in step 1
It is welded in sensor base (5)；
Step 5, by two impulse conduits (16) respectively by two adapters (17), using the weld bond processing side described in step 1
Method and welding procedure are welded in sensor base (5).
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| JP2019512084A (en) * | 2016-02-03 | 2019-05-09 | ハッチンソン テクノロジー インコーポレイテッドＨｕｔｃｈｉｎｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｉｎｃｏｒｐｏｒａｔｅｄ | Compact pressure and force sensor with integrated lead |
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| CN113340481B (en) * | 2021-04-20 | 2023-05-30 | 中山大学 | Pressure sensor and preparation method thereof |
| CN113790835B (en) * | 2021-09-23 | 2024-01-30 | 华东光电集成器件研究所 | Manufacturing method of silicon pressure sensor chip with island film structure |
| CN114136511B (en) * | 2021-12-07 | 2024-03-01 | 华东光电集成器件研究所 | SOI piezoresistive pressure sensor of cable line system |
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