CN102168994A - Silicon capacitive differential pressure transducer with multi-parameter and compensation method of static pressure influence - Google Patents
Silicon capacitive differential pressure transducer with multi-parameter and compensation method of static pressure influence Download PDFInfo
- Publication number
- CN102168994A CN102168994A CN 201010610931 CN201010610931A CN102168994A CN 102168994 A CN102168994 A CN 102168994A CN 201010610931 CN201010610931 CN 201010610931 CN 201010610931 A CN201010610931 A CN 201010610931A CN 102168994 A CN102168994 A CN 102168994A
- Authority
- CN
- China
- Prior art keywords
- pressure
- static pressure
- differential pressure
- sensor
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to a silicon capacitive differential pressure transducer with multi-parameter and a compensation method of static pressure influence. A silicon capacitive differential pressure sensitive unit, a pressure sensitive unit and a temperature sensitive unit are arranged inside a pressure chamber of the transducer to change a previous single differential pressure output form of the silicon capacitive differential pressure transducer and realize a multi-parametric measuring output of on-site measuring of a single transducer. Meanwhile, by utilizing measuring values about the on-site measuring of a pressure signal and a temperature signal provided by the pressure unit and the temperature unit, a background processing circuit conducts a compensation processing of static pressure and temperature influence upon differential pressure output parameters output by the silicon capacitive differential pressure unit through digital compensation, thereby effectively eliminating additional errors in the static pressure, the temperature, etc. The method of the invention is simple and easy in operation, improves integral precision of the transducer, enables reduction of cost, substantially enhances cost performance of a capacitive transducer and is greatly favorable for the batch production of the silicon capacitive transducer.
Description
Technical field
The present invention relates to sensor manufacturing and signal processing technology thereof, multi-functional differential pressure pick-up of a kind of silicon electric capacity and influence of static pressure compensation method.
Background technology
Silicon capacitor differential pressure transducer is a kind of novel structural type differential pressure pick-up, the core Sensitive Apparatus adopts single crystal silicon material, utilize microelectronics and micromachined integration technology to make, because the intrinsic advantage of the elastomeric material of silicon materials, the silicon capacitive transducer is compared with metal capacitance sensor in the past, all had remarkable advantages more at aspects such as measuring accuracy, stability.The core Sensitive Apparatus of silicon capacitive transducer is converted to corresponding capacitance variations to two pressure signals that add, and testing circuit then is converted to the electric signal that needs to changes in capacitance, this electric signal is just handled can obtain corresponding output signal.
For differential pressure pick-up, its output and impressed pressure difference sensitivity in the ideal case, insensitive to force value, promptly the influence of static pressure of differential pressure pick-up should be very little.But in the actual conditions, many factors all can cause the output signal of differential pressure pick-up to be subjected to the influence of static pressure, and this influence of static pressure causes a kind of additive error to the differential pressure measurement result of sensor, directly influences the integrated measurement accuracy of sensor.In order to improve the synthesis precision of differential pressure pick-up, be necessary to reduce the influence of static pressure of differential pressure pick-up.In addition, in the prior art, capacitor differential pressure transducer all is single parameter output usually, be that individual quantities is exported corresponding differential pressure input signal, parameter output informations such as no static pressure and temperature, make the post-compensation technology of sensor be restricted, also can't satisfy the requirement that a plurality of parameters are provided of industry spot needs.
Intelligent development along with China's industrial process control technology, the Industry Control instrument is growing to the demand of multiparameter, high-precision sensor, the multiparameter output transducer progressively replaces single parameter output transducer has become inevitable trend, also sensor realization high-acruracy survey is had higher requirement simultaneously.Therefore increase the measuring multiple parameters unit on Design of Sensor, and reduce the influence of static pressure of sensor by compensation technique, the synthesis precision that improves sensor is very necessary.
At present, the basic skills that effectively reduces the influence of static pressure of capacitor differential pressure transducer is: 1, by optimizing Design of Sensor and manufacturing process, fundamentally directly improve the static pressure index of sensor.This method requires higher to Design of Sensor and manufacturing process and even technological equipment, harsher to the conditional request that realizes, the realization difficulty is big, sometimes be difficult to continue to reduce influence of static pressure under certain condition, under certain bottleneck condition, may cause technology to stop, and cause production cost to be difficult to further decline.2, adopt the compensation technique of software and hardware combining,, improve the static pressure index of capacitive transducer by the digital processing technology of fast development.This method is lower to design and technological equipment dependence, is easy to relatively realize.Can also change the capacitive transducer that some static pressure index does not meet the demands into satisfactory sensor by the static pressure compensation technique, thereby improve the synthesis precision of sensor, improve yield rate, reduce production cost of products.At present, do not see open report about the content of the multi-functional differential pressure pick-up influence of static pressure of silicon electric capacity compensation method.
Summary of the invention
The object of the invention provides a kind of influence of static pressure compensation method that can realize multiparameter output and silicon capacitor differential pressure transducer, realize that single-sensor is with the multiparameter output of point and the high-acruracy survey of output characteristics, effectively eliminate additive errors such as static pressure, temperature, improve the integrated measurement accuracy of capacitive transducer.
The silicon capacitor differential pressure transducer of multiparameter output, in silicon capacitance-sensitive core body base, differential pressure measurement sensitive element, hydrostatic pressure element and temperature-sensing element (device) are set, it is characterized in that with collection static pressure, temperature-sensing element (device) being that the pressure-temperature sensor of one places on the sintering base of silicon capacitance-sensitive core body, the output electrode of each sensitive element is linked to each other with the corresponding pin of sintering base by the Si-Al wire pressure welding respectively, and link to each other with testing circuit, the silicone oil that each sensitive element is encapsulated in by metal isolation diaphragm isolating seal charges in the liquid; Two impulse mouths of this sensor link to each other with low-pressure cavity with the high pressure chest of compression zone respectively, and impressed pressure is delivered to sensitive element by the liquid that charges of sensor internal.The influence of static pressure compensation method, comprise that employing is provided with differential pressure measurement in silicon capacitor differential pressure transducer, the sensor of static pressure and temperature-sensing element (device), the differential pressure amount Pd that it is characterized in that the external environment condition monitoring variable, static pressure amount Ps, temperature amount T, be converted to electric parameter output by three sensing units, wherein differential pressure sensing unit output electric parameter Upd also is subjected to the influence of static pressure Ps and temperature T except the influence of reflection differential pressure amount Pd, and the output electric parameter Ups of static pressure sensing unit also is subjected to the influence of temperature T except that reflection static pressure Ps, three parameter Upd, Ups, Ut realizes the multiparameter output of single-sensor with point by the digital quantity that converts to of modular converter 2; The processing by change-over circuit and compensation data treatment circuit of static pressure parameter that utilize to produce simultaneously and temperature parameters realizes the compensation correction to the differential pressure measurement parameter.
Outstanding contributions of the present invention are:
1, in silicon capacitor differential pressure transducer, introduces the static pressure sensing unit, test out the static pressure value of test site by the static pressure sensing unit, utilize the static pressure measurement value that the measured value of silicon capacitor differential pressure sensing unit is carried out digital compensation through the digital processing of handling compensating circuit, realize the influence of static pressure compensation of silicon capacitor differential pressure transducer, improve the synthesis precision of sensor.
2, change the single differential pressure amount output form of silicon capacitor differential pressure transducer,, realized the many reference amounts output of the test site of silicon capacitor differential pressure transducer by increasing static pressure sensing unit and responsive to temperature unit.This silicon capacitor differential pressure transducer can be realized differential pressure, the pressure to the scene, the measurement of temperature amount, and is integrated by the encapsulation of crossing a sensing unit, improved the combination property price ratio of silicon capacitor differential pressure transducer.This method is simple and easy to operate, and cost is low, and is very favourable to the batch process of capacitive transducer.
Description of drawings
Fig. 1 is a silicon capacitor differential pressure sensing unit principle of work synoptic diagram of the present invention;
Fig. 2 is static pressure of the present invention-responsive to temperature cell operation principle schematic;
Fig. 3 is a many reference amounts silicon capacitor differential pressure transducer structural representation of the present invention;
Fig. 4 is a silicon capacitor differential pressure sensing unit structure cut-open view of the present invention;
Fig. 5 is static pressure of the present invention-responsive to temperature cellular construction sectional arrangement drawing;
Fig. 6 is static pressure of the present invention-responsive to temperature cellular construction assembling plan view;
Fig. 7 many reference amounts silicon capacitor differential pressure transducer compensation principle figure;
Fig. 8 many reference amounts silicon capacitor differential pressure transducer static pressure compensating module block diagram;
Fig. 9 silicon piezoresistive pressure sensing unit static pressure-temperature principle of work synoptic diagram;
Embodiment
The silicon capacitor differential pressure transducer of multiparameter output, its principle of work and power is seen Fig. 7, in the responsive module 1 of silicon capacitor differential pressure transducer, be provided with 3 sensitive elements, be respectively differential pressure sensing unit 1a, static pressure sensing unit 1b, temperature unit 1c, the external environment condition monitoring variable has differential pressure amount Pd, static pressure amount Ps, temperature amount T, be converted to electric parameter output respectively by three sensing units, wherein differential pressure sensing unit output electric parameter Upd also is subjected to the influence of static pressure Ps and temperature T except the influence of reflection differential pressure amount Pd, and the output electric parameter Ups of static pressure sensing unit also is subjected to the influence of temperature T except that reflection static pressure Ps, three parameter Upd, Ups, Ut is by being converted to digital quantity by data acquisition signal modular converter 2, carrying out digital compensation by data processing compensation modular converter handles, the corresponding differential pressure Pd of final formation, static pressure Ps, three electric parameter Xd of temperature T, Xs, Xt information, wherein Xd is only relevant with differential pressure Pd, be not subjected to the influence of Ps, promptly when realizing a plurality of parameter measurements, also realize static pressure and Temperature Compensation.Whole process can be represented by equation with many unknowns group form.Its expression formula is as follows:
Upd＝f
1(Pd，Ps，T) (1)
Ups＝f
2(Ps，T) (2)
Ut＝f
3(T) (3)
Xd＝f
4(Upd，Ups，Ut) (4)
Xs＝f
5(Ups，Ut) (5)
Xt＝f
6(Ut) (6)
Wherein Upd is a differential pressure element output valve
Ups is a static pressure element output valve
Ut is the temperature element (TE) output valve
Pd adds differential pressure value
Ps adds static pressure
T adds temperature value
Xp is a sensor differential pressure output differential pressure amount
Xs is a sensor static pressure output static pressure
Xt is the sensor temperature output valve
In the production compensation proof procedure of sensor, Pd, Ps, T are known outer input quantity, and Xp, Xs, Xt are three electric parameters after compensation data is handled of final sensor output.Electric parameter Upd, Ups, Ut are the known quantity that sensing unit is changed out, set up Xp, Xs, Xt and Pd, Ps, T corresponding relation by equation (1)～(6).In the actual application of sensor, utilize the corresponding relation draw, output parameter Xp, Xs, Xt and sensing unit output quantity Upd, Ups, Ut by sensor can clearly test out external environment condition amount Pd, Ps, T.Thereby when having realized the many reference amounts output of sensor, realize the static pressure compensation of differential pressure, and then improve the integrated measurement accuracy of sensor.
In Fig. 7, sensor assembly 1 realizes adding the conversion of physical signalling, and the static pressure unit 1b of setting of the present invention converts outside static pressure to electric signal Ups, and this signal is eliminated the influence of static pressure of realizing differential pressure pick-up and is absolutely necessary.。Data acquisition signal modular converter 2 is transformed into corresponding electric signal to the resistance signal of the voltage signal of the capacitance signal of differential pressure sensing unit 1a output, static pressure sensing unit 1b output, responsive to temperature unit 1c output, and the electric signal of analog quantity is transformed into digital quantity output.The digital quantity of being exported by 3 pairs of data acquired signal of data processing compensation modular converter modular converter 2 of back carries out data processing, compensation, correction again, forms the measurement output valve of sensor at last.
The silicon capacitor differential pressure transducer structure of embodiment 1 is seen Fig. 3, it is characterized in that: be packaged with differential pressure sensing unit 1a in the sensor base 7, differential pressure sensing unit 1a is fixed in the sensor base 7 by the metal connecting pipe 1a-4 of one of its assembly, and its output is connected to data acquisition and modular converter 2 by sintering lead-in wire 6.The more detailed structure of differential pressure sensing unit 1a is seen as Fig. 4; One sintering terminal 8 is arranged on pedestal 7, static pressure sensing unit 1b, responsive to temperature unit 1c are housed at the inside surface place, its output separately is connected to data acquisition and modular converter 2 by sintering lead-in wire 6, sintering terminal 8 and on static pressure sensing unit 1b and the CONSTRUCTED SPECIFICATION of responsive to temperature unit 1c see Fig. 5 and Fig. 6.Data acquisition modular converter 2 links to each other with processing compensation modular converter 3 by data line 10, and the more detailed composition of module 2 and module 3 is seen Fig. 8.High pressure chest a and low-pressure cavity b are arranged at sensor base 7 bottoms, and external pressure P1 leads to high pressure chest a and is transmitted to the positive chamber of differential pressure sensing unit 1a, static pressure sensing unit 1b, and external pressure P2 leads to negative pressure cavity and passes to the negative chamber of differential pressure sensing unit 1a.
Fig. 4 represents the details of the differential pressure sensing unit 1a structure among sensor construction Fig. 3.This structure order from top to bottom: form by glass fixed polar plate 1a-2, silicon center pole plate 1a-1, glass fixed polar plate 1a-2, glass film plates 1a-3, connecting pipe 1a-4, base 7 etc.Center pole plate 1a-1 is the silicon single crystal flake of twin polishing, and there is a mass 1a-8 that can move up and down that links to each other with the film district centre, has the electrode of pressure welding point 1a-9 realization pole plate to draw on the right side.Fixed polar plate 1a-2 is made by two throwing glass, and the pressure guide hole 1a-7 that penetrates glass is arranged at the center, and there is electrode layer 1a-6 on glass pole plate and pressure guide hole surface, forms metal connecting line simultaneously in pressure guide hole 1a-7 sidewall surfaces; Glass film plates 1a-3 links to each other with glass pole plate 1a-2, on its limit pressure welding point 1a-9 is arranged and draws so that realize the electrode of electric capacity bottom crown.
Fig. 5 and Fig. 6 are sintering terminal 8 and go up the CONSTRUCTED SPECIFICATION of static pressure-responsive to temperature cellular construction sectional arrangement drawing among sensor construction Fig. 3.Round centre bit at sintering terminal 8 is equipped with static pressure sensing unit 1b and responsive to temperature unit 1c, and the pin 6 on the sintering terminal 8 has 8 pins, and wherein the electrode leads to client 1a-9 of pin 6a, 6b, 6c and differential pressure sensing unit 1a adopts Si-Al wire to be connected; Pin 6d, 6e, 6f, 6g link to each other with input, output terminal IN, O, Out1, the Out2 (seeing Fig. 2 .1 and Fig. 2 .2 structural drawing) of static pressure sensing unit 1b respectively, pin 6h links to each other with the output terminal Out3 of responsive to temperature unit 1c.
The static pressure sensing unit of mentioning in Fig. 5 and Fig. 6 structrual description and its CONSTRUCTED SPECIFICATION of responsive to temperature unit are seen Fig. 2, and silicon 1b-1, two throwing glass 1b-2 sealing-in form.Silicon 1b-1 upper surface adopts micromachined technology to form 4 presser sensor electricity groups R1, R2, R3, R4 in place, and formation temperature sensitive resistance Rt, have a cavity to become vacuum state at the silicon back side, R1, R2, R3, R4 connect into electric bridge according to illustrated layout.
Differential pressure sensing unit embodiment explanation in the silicon capacitor differential pressure transducer of embodiment 1:
Because silicon capacitor differential pressure transducer will guarantee sensor and realize the function that requires, design unique assembling technology procedure.It at first is the making of sensing unit, the center pole plate 1a-1 of differential pressure sensing unit 1a (detailed structure is seen Fig. 4) is the silicon single crystal flake of twin polishing, adopt micromachined technology to make, middle mass 1a-8 moving up and down adopts chemical etching technology to make, and adopts Si-Al wire ultrasonic bonding technology to realize pressure welding point 1a-9 drawing to electrode terminal 6.Fixed polar plate 1a-2 is made by two throwing glass, processes the pressure guide hole 1a-7 that penetrates glass at the center earlier, adopts the method for splash-proofing sputtering metal to form electrode layer 1a-6 on its surface again.Silicon center pole plate 1a-1 and glass fixed polar plate 1a-2, glass film plates 1a-3 and connecting pipe 1a-4 adopt the electrostatic sealing-in process sequence to link together, adopt conducting resinl to link to each other between glass fixed polar plate 1a-2 and the glass film plates 1a-3, adopt the welding technology realization to be tightly connected between connecting pipe 1a-4 and the sensor base 7.Adopt bond technology to form Si-Al wire line 1a-10 between solder joint 1a-9 and sintering terminal 6, the realization capacitance electrode is drawn.Last differential pressure sensing unit is packed in the pedestal 7.The conductive medium of silicone oil as ambient pressure arranged in pedestal 7.The final differential pressure sensing unit-differential pressure core body that forms.
Static pressure sensing unit 1b, responsive to temperature unit 1c adopt micromachined technology to be produced on the silicon chip of 2.45mm * 2.45mm to constitute static pressure, responsive to temperature unit.Wherein adopt to inject doping process the boron ion is injected in the silicon surface, in annealed activation, expand technology such as oxidation again and form sensitive resistance.Process cavity 1b-3 at chip back with chemical etching technology.The silicon that processes again with seal glass by under vacuum state, linking together through airtight electrostatic sealing-in technology, form and possess tonometric sensing unit.
Sensor assembling process: at first static pressure-responsive to temperature unit is bonded in sintering terminal 8 surfaces, with ultrasonic bonding technology solder joint is being connected with terminal lead, the sintering terminal is assembled on the pedestal 7 with electro-beam welding process, differential pressure cell is installed to pedestal, and the connecting pipe outer end on it adopts the argon arc welding technology to be connected with the pedestal junction.Through welding diaphragm, diaphragm moulding, charge, wear out, operation such as screening, become qualified differential pressure pick-up.The differential pressure pick-up of finishing and data acquisition modular converter 2 and module 2 and data processing compensation modular converter 3 are connected according to designing requirement, and installation shell, jig etc. become final pressure unit.
The principle of work of differential pressure sensing unit is when impressed pressure is added on the upper surface (lower surface) of piece 1a-8, movable mass 1a-8 is under the situation of film district deformation bending, (making progress) moves downwards, cause the gap of 1a-8 and fixed electorde 1a-2 to change, and then the sensitization capacitance that 1a-8 and electrode 1a-6 form changes, and this variation can be used for detecting the variation of impressed pressure.
The principle of work of silicon capacitor differential pressure sensing unit 1a can be reduced to two differential capacitors and see shown in Figure 1ly, and Fig. 4 has then provided the implementation structure figure of silicon capacitor differential pressure sensing unit 1a.The pressure-sensitive sense unit 1a that is on duty experiences gaging pressure P1 and the P2 impressed pressure is done the time spent, causes that initial differential capacitor C1, C2 change, and the expression formula of its electric capacity is respectively (7) and (8), and the difference of electric capacity is removed and be linear with input pressure, and expression formula is (9)
C wherein
1, C
2Be two differential initial capacitance; δ
0Be the differential capacitor primary clearance; A δ is a capacitance gap variable quantity under the ambient pressure effect, and P1, P2 are respectively and add input pressure, and by formula (9) as can be known, the output and the impressed pressure difference of differential capacitor type capacitor differential pressure transducer are directly proportional.
The principle of work of static pressure-responsive to temperature unit as shown in Figure 2, pressure sensitive cells 1b is used to experience the static pressure amount, responsive to temperature unit 1c is used to experience the temperature amount, pressure sensitive cells is 4 voltage dependent resistor (VDR) R by diffusion silicon pressure sensor
1, R
4, R
2, R
3Connect into Wheatstone bridge, wherein R
1, R
4Be designed to increase its resistance and reduce R with pressure
2, R
3Being designed to increase its resistance with pressure increases, bridge circuit is encouraged input end IN and the logical constant excitation electric current of ground end O, be an exportable canonical measure signal Vout corresponding to this pressure between the bridge circuit output terminal Out1 of 4 voltage dependent resistor (VDR) compositions and the Out2 among the pressure sensitive cells 1b, the relation between output and the pressure drag can be write as expression formula (10).
V
out＝I×(R
2×R
3-R
1×R
4)/(R
1+R
2+R
3+R
4) (10)
Wherein:
V
OutBe pressure sensitive cells bridge output voltage
I is a pressure sensitive cells input stimulus electric current
R
1, R
2, R
3, R
4Be 4 presser sensor resistance of pressure sensitive cells
Responsive to temperature unit 1c is made up of a thermistor Rt, and its resistance value increases along with the temperature increase at scene, is used for measuring ambient temperature value of living in.
Silicon electric capacity many reference amounts differential pressure pick-up static pressure, temperature compensation specific implementation method totally are made up of three parts as shown in Figure 8 altogether, i.e. multi-parameter sensor module 1, data acquisition signal modular converter 2, data processor compensation modular converter 3.
Data acquisition signal modular converter 2 comprises capacitance signal acquisition process unit 2a, static pressure signal acquisition process unit 2b, temperature signal collection processing unit 2c, A/D modular converter 2d, be responsible for converting the electric signal of the output of the sensitivity in the multi-parameter sensor module 1 to digital signal by the 2d analog-to-digital conversion module, so that follow-up digital circuit reason.
Data processor compensation modular converter 3 mainly comprises program storage 3a, data-carrier store 3b, single-chip microcomputer 3c, D/A conversion 3d, power module 3e, output unit 3f etc.Be responsible for processing, static pressure compensation, temperature compensation, HART communication, simulation output and the various computing of various data.Wherein, program storage 3a is used for storing various software programs, and data-carrier store 3b is characteristic parameter and the offset data that is used for storing Multifunction Sensor.Single-chip microcomputer 3c is the core of data processor compensation modular converter 3, it is responsible for controlling the working sensor flow process, the digital quantity that prime data acquisition signal modular converter 2 is provided carries out data processing, mainly finishes the range setting at zero point of sensor, non-linear correction, temperature compensation, static pressure compensation and scale transformation etc.Simultaneously, also can carry out the computing of various functions etc. as required, another critical function of single-chip microcomputer is to finish the HART protocol communication.4～20mA standard output unit 3f function is realized by the Single-chip Controlling D/A converter.Power module 3e provides excitation power supply for each sensing unit 1a, 1b, 1c, circuit component in data acquisition signal modular converter 2, the sensor assembly 1.Last sensor output meets the 4～20mA normalized current or the voltage output of industrial standard.
The realization of capacitor differential pressure transducer influence of static pressure compensation is in two steps: the 1st, and the static pressure compensation process; 2 is the sensor actual application.
The static pressure compensation process carries out according to following process: the working pressure Ps that will bear sensor earlier carries out discretize, minimum static pressure is 0, maximum is expressed as Pmax, Ps is divided into 4 is divided into 5 numeral points Ps (i)=Pmax*i/4, wherein i=0,1,2,3,4 (actual isodisperse can be adjusted), when Ps (0)=0 was no static pressure in addition, this moment, the output of differential pressure sensing unit did not have the influence of static pressure error.Add static pressure Ps (i) with the normal pressure generator to sensor, processor control data acquired signal converting unit, obtain the static pressure data that the static pressure sensing unit produces by the A/D conversion, here be expressed as Ds (i), under static pressure point instantly according to sensor specified test testing sensor differential pressure characteristic, add differential pressure Pd (j)=Pdmax*j/4, (j=0 wherein, 1,2,3,4 actual isodisperses can be adjusted), the data that processor control A/D conversion obtains the generation of differential pressure converting unit be expressed as here Dd (i, j).After finishing, the data that processor obtains test deposit the data-carrier store of data processing compensation modular converter 3 in and solidify.
In the sensor actual application: the static pressure compensate function is called by timesharing in the total program of program as a software module, realizes the compensation of differential pressure pick-up influence of static pressure.Processing procedure is, add static pressure, differential pressure signal enters sensor assembly, signal acquisition module is converted to capacitance variations signal and voltage signal to the impressed pressure signal respectively, processor of single chip computer is obtained on-the-spot corresponding differential pressure data and static pressure data by signal conversion module, be designated as Dd and Ds respectively,, Dd and Ds handled calling static pressure compensation deals software module, the be eliminated differential pressure data NDd of influence of static pressure is used for follow-up other standard operations and output.
Static pressure compensation deals software module implementation method: sensor has formed the tables of data that [Ds (i) Dd (I, j)] forms in the static pressure compensation process in preceding step, is solidificated in the data-carrier store of data processing compensation modular converter 3.According to the Ds numerical value of obtaining, pass through look-up table, to tables of data Ds (i), obtain value, thereby determine the concrete position I of data Ds (i) in tables of data Ds (i), according to the position data that obtains with the immediate Ds of Ds (i), can be from tables of data Dd (i, j) obtain in one group of corresponding data Dd (I, j), the reorganization data recording influence of static pressure characteristic of this sensor.Again with Dd numerical value the data Dd that obtains (I, j) in, adopt method of interpolation to be compensated COEFFICIENT K according to following formula (11), (12) according to the pattern
Find J, satisfy Dd (I, J)≤Dd＜Dd (I, J+1) or Dd (I, J) 〉=(I is in the time of J+1) for Dd＞Dd
K＝(Dd-Dd(I，J))/((Dd(I，J+1)-Dd(I，J)) (11)
NDd＝K*(Dd(0，J+1)-Dd(0，J)) (12)
The NDd numerical value that calculates according to (11) (12) is the differential pressure Pd respective sensor output valve of having eliminated influence of static pressure.Thereby reached in the sensor differential pressure measurement compensation, improved the sensor synthesis precision influence of static pressure.
In the sensor intelligent processing procedure, also some data processing work such as linear compensation, temperature compensation, span shift, range compression, data communication etc. all are routine, the proven technique means in the intelligent transducer, in very to commercially available intelligent integrated circuit board, all belong to indispensable function, these do not belong to content of the present invention yet, so the present invention does not do the increase and decrease improvement to these work.So in compensation data method implementation, not special mentioning.
Embodiment 2: in embodiment 1, responsive to temperature unit 1c adopts thermistor, and this thermistor varies with temperature and changes.Can also adopt the thermal diode of conventional criteria to experience temperature variation, to be encapsulated in the pressure chamber of sensor equally, specifically as shown in Figure 3, the temperature voltage signal of its generation is converted to digital quantity by modular converter, and its disposal route and embodiment 1 are basic identical.Present embodiment is the same with example 1, can guarantee that the temperature of sensing unit impression is consistent with differential pressure static pressure sensing unit, can effectively improve the effect of temperature compensation.This example only relates to the sensing unit of temperature signal, does not influence the compensation with static pressure signal of obtaining of static pressure signal, so follow-up static pressure compensation method and example 1 are identical.
Embodiment 3: all adopted independent responsive to temperature unit in embodiment 1,2, also can remove responsive to temperature unit 1c in this example, the special utilization by the bridge circuit 1b of Silicon pressure Sensitive Apparatus realizes to the measurement function of temperature, realizes that principle sees Fig. 9.Pressure sensitive cells is 4 voltage dependent resistor (VDR) R by the diffused-silicon pressure Sensitive Apparatus
1, R
4, R
2, R
3Connect into Wheatstone bridge, R1 wherein, R4 is designed to two resistance of same parameter and reduces along with the increase of pressure, R2, R3 is designed to same two resistance and increases with pressure, and the time make R1 in design, R4 is along with the decrease and the R2 of the increase of pressure, R3 equates with the recruitment that pressure increases, bridge circuit is encouraged input end IN and the logical constant excitation electric current I of ground end O, be an exportable canonical measure signal Vout corresponding to this pressure between the bridge circuit output terminal Out1 of 4 voltage dependent resistor (VDR) compositions and the Out2 among the pressure sensitive cells 1b, output characteristics is represented by expression formula (15).Bridge circuit input end Vout is represented by expression formula (16).
R
2＝R
3＝R
0+R
p+R
t (13)
R
1＝R
4＝R
0-R
p+R
t (14)
V
out＝I×(R
2-R
1)/2＝I×R
p (15)
V＝I×(R
2+R
1)/2＝I×(R
0+R
t) (16)
Wherein
R
0: the basic resistance of sensitive resistance
R
p: sensitive resistance is with the resistance of change in pressure
R
t: sensitive resistance varies with temperature and the resistance that changes
I: bridge circuit exciting circuit
V
Out: the output of static pressure sensing unit bridge circuit
V: static pressure sensing unit bridge circuit input terminal voltage
By expression formula (15) as can be known, Vout is only relevant with the influence that pressure produces; And by expression formula (16) as can be known, static pressure sensing unit bridge circuit input terminal voltage V only varies with temperature and changes, but not with change in pressure.Utilize this with characteristic, only utilize the static pressure sensing unit promptly can realize static pressure measurement Vout, can realize temperature survey V simultaneously.
This example only relates to static pressure sensing unit and responsive to temperature unit in the example 1, realized obtaining of static pressure signal and temperature signal by the static pressure sensing unit, pass to data acquisition and modular converter after signal is obtained, describe identical in function realization thereafter and static pressure compensation method and the example 1.
Claims (5)
1. the silicon capacitor differential pressure transducer of multiparameter output, in silicon capacitance-sensitive core body base, differential pressure measurement sensitive element, hydrostatic pressure element and temperature-sensing element (device) are set, it is characterized in that with collection static pressure, temperature-sensing element (device) being that the pressure-temperature sensor of one places on the sintering base of silicon capacitance-sensitive core body, the output electrode of each sensitive element is linked to each other with the corresponding pin of sintering base by the Si-Al wire pressure welding respectively, and link to each other with testing circuit, the silicone oil that each sensitive element is encapsulated in by metal isolation diaphragm isolating seal charges in the liquid; Two impulse mouths of this sensor link to each other with low-pressure cavity with the high pressure chest of compression zone respectively, and impressed pressure is delivered to sensitive element by the liquid that charges of sensor internal.
2. the silicon capacitor differential pressure transducer of multiparameter output according to claim 1, the structure that it is characterized in that differential pressure sensing unit (1a), center silicon pole plate (1a-1) is made for adopting micromachined technology on the silicon single crystal flake of twin polishing, there is a mass that can move up and down (1a-8) that links to each other with the film district centre, fixed polar plate (1a-2) is made by two throwing glass, earlier adopt sputter again at the pressure guide hole (1a-7) that processes on glass, technologies such as photoetching form electrode layer (1a-6) on the surface, in pressure guide hole (1a-7), form metal connecting line simultaneously, as drawing of glass fixed polar plate electrode, glass film plates (1a-3) and glass pole plate (1a-2) have a pressure welding point to draw as the electrode of capacitor fixing pole plate respectively at the edge, silicon center pole plate (1a-1) and glass fixed polar plate (1a-2), glass film plates (1a-3) adopts electrostatic sealing-in technology to link together with connecting pipe (1a-4), adopt conducting resinl to link to each other between glass fixed polar plate (1a-2) and the glass film plates (1a-3), the realization of employing welding technology is tightly connected between connecting pipe (1a-4) and the sensor base (7); Adopt bond technology between solder joint (1a-9) and sintering terminal (6), to form Si-Al wire line (1a-10) and draw, in the pedestal (7) of at last differential pressure sensing unit (1a) being packed into as capacitance electrode; The conductive medium of silicone oil as ambient pressure arranged in pedestal (7).
3. the influence of static pressure compensation method of a silicon electric capacity many reference amounts differential pressure pick-up, comprise that employing is provided with the differential pressure measurement sensor in silicon capacitor differential pressure transducer, static pressure and sensor for measuring temperature, the differential pressure amount Pd that it is characterized in that the external environment condition monitoring variable, static pressure amount Ps, temperature amount T, be converted to electric parameter output by three sensing units, wherein differential pressure sensing unit (1a) output electric parameter Upd also is subjected to the influence of static pressure Ps and temperature T except the influence of reflection differential pressure amount Pd, and the output electric parameter Ups of static pressure sensing unit (1a) also is subjected to the influence of temperature T except that reflection static pressure Ps, three parameter Upd, Ups, Ut is by the differential pressure signal of data acquisition signal modular converter (2) to multi-parameter sensor output, static pressure signal and temperature signal are gathered, and convert the corresponding digital amount to, realize the multiparameter output of single-sensor with point; By data processing compensation modular converter (3) these digital quantities are carried out data processing, compensation correction again, realization many reference amounts silicon capacitive transducer is exported three output electric parameter Xd, Xs, the T information of corresponding differential pressure Pd, static pressure Ps, temperature T, and wherein Xd is only relevant with differential pressure Pd, Xs is only relevant with Ps, Xt is only relevant with T.
4. the influence of static pressure compensation method of silicon electric capacity many reference amounts differential pressure pick-up according to claim 3, the realization that it is characterized in that capacitor differential pressure transducer influence of static pressure compensation be in two steps: the one, and the static pressure compensation process; Two is the sensor actual application;
One, the static pressure compensation process carries out according to following process: the working pressure Ps that will bear sensor earlier carries out discretize, minimum static pressure is 0, maximum is expressed as Pmax, Pmax is divided into 4 is divided into 5 numeral point Ps (i)=Pmax*i/4, i=0 wherein, 1,2,3,4 (actual isodisperse can be adjusted) are not when Ps (0)=0 promptly has static pressure in addition; Add static pressure Ps (i) with the normal pressure generator to sensor, processor control data acquired signal converting unit, obtain the static pressure data that the static pressure sensing unit produces by the A/D conversion, here be expressed as Ds (i), under static pressure point instantly according to sensor specified test testing sensor differential pressure characteristic, add differential pressure Pd (j)=Pdmax*j/4, (j=0 wherein, 1,2,3,4 actual isodisperses can be adjusted), the data that processor control A/D conversion obtains the generation of differential pressure converting unit be expressed as here Dd (i, j); After finishing, the data that processor obtains test deposit the data-carrier store of data processing compensation modular converter 3 in and solidify;
Two, in the sensor actual application: the static pressure compensate function is called by timesharing in the total program of program as a software module, realizes the compensation of differential pressure pick-up influence of static pressure.Processing procedure is, add static pressure, differential pressure signal enters sensor assembly, signal acquisition module is converted to capacitance variations signal and voltage signal to the impressed pressure signal respectively, processor of single chip computer is obtained on-the-spot corresponding differential pressure data and static pressure data by signal conversion module, be designated as Dd and Ds respectively,, Dd and Ds handled calling static pressure compensation deals software module, the be eliminated differential pressure data NDd of influence of static pressure is used for follow-up other standard operations and output.
5. the influence of static pressure compensation method of silicon electric capacity many reference amounts differential pressure pick-up according to claim 4, it is characterized in that static pressure compensation deals software module implementation method: sensor has formed [Ds (i) Dd (I in the static pressure compensation process in preceding step, j)] tables of data of Zu Chenging is solidificated in the data-carrier store of data processing compensation modular converter 3; According to the Ds numerical value of obtaining, pass through look-up table, to tables of data Ds (i), obtain value, thereby determine the concrete position I of data Ds (i) in tables of data Ds (i), according to the position data that obtains with the immediate Ds of Ds (i), can be from tables of data Dd (i, j) obtain in one group of corresponding data Dd (I, j), the reorganization data recording influence of static pressure characteristic of this sensor; Again with Dd numerical value the data Dd that obtains (I, j) in, adopt method of interpolation to be compensated COEFFICIENT K according to following formula (11), (12) according to the pattern
Find J, satisfy Dd (I, J)≤Dd＜Dd (I, J+1)
K＝(Dd-Dd(I，J))/((Dd(I，J+1)-Dd(I，J)) (11)
Dd’＝K*(Dd(0，J+1)-Dd(0，J)) (12)
Dd ' the numerical value that calculates according to (11) (12) is the differential pressure Pd respective sensor output valve of having eliminated influence of static pressure, thereby has reached in the sensor differential pressure measurement compensation to influence of static pressure, improves the sensor synthesis precision.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010610931 CN102168994B (en) | 2010-12-29 | 2010-12-29 | Silicon capacitance differential pressure transducer with multi-parameter and compensation method of static pressure influence |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010610931 CN102168994B (en) | 2010-12-29 | 2010-12-29 | Silicon capacitance differential pressure transducer with multi-parameter and compensation method of static pressure influence |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102168994A true CN102168994A (en) | 2011-08-31 |
| CN102168994B CN102168994B (en) | 2013-01-09 |
Family
ID=44490241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010610931 Expired - Fee Related CN102168994B (en) | 2010-12-29 | 2010-12-29 | Silicon capacitance differential pressure transducer with multi-parameter and compensation method of static pressure influence |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102168994B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105181187A (en) * | 2015-09-09 | 2015-12-23 | 沈阳仪表科学研究院有限公司 | Silicon-based pressure sensor and manufacturing method thereof |
| CN106813810A (en) * | 2017-01-17 | 2017-06-09 | 中南大学 | The method for separating flexible temperature pressure sensing component temperature pressure-responsive |
| CN107849871A (en) * | 2015-08-04 | 2018-03-27 | 爱信精机株式会社 | Operate the calibrating installation of input detection device and capacitance sensor |
| CN108871483A (en) * | 2018-07-13 | 2018-11-23 | 深圳电通纬创微电子股份有限公司 | A kind of corrosion-resistant fuel gas table temperature and pressure compensation integrated transducer and its manufacturing method |
| CN112729661A (en) * | 2020-12-29 | 2021-04-30 | 北京金迈捷科技有限公司 | Ultralow temperature pressure sensor with temperature signal output function |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6098328A (en) * | 1983-11-02 | 1985-06-01 | Yokogawa Hokushin Electric Corp | Temperature and static pressure compensating method of pressure and differential pressure transmitter |
| JPH109987A (en) * | 1996-06-19 | 1998-01-16 | Shimadzu Corp | Electrostatic capacity type pressure-difference pressure transmitter |
| CN2327991Y (en) * | 1998-06-03 | 1999-07-07 | 王洪业 | Transducer for measuring static pressure, pressure difference and temperature simultaneously |
| CN2667667Y (en) * | 2003-08-22 | 2004-12-29 | 沈阳仪表科学研究院 | Silicon capacitive pressure sensor |
| CN2758712Y (en) * | 2004-12-01 | 2006-02-15 | 中国石油天然气集团公司 | Intelligent differential pressure transmitter |
| CN1869599A (en) * | 2005-05-27 | 2006-11-29 | 上海自动化仪表股份有限公司 | Multi-parameter sensor for measuring differential pressure/pressure/temp |
| CN1974372A (en) * | 2006-12-15 | 2007-06-06 | 沈阳仪表科学研究院 | Monolithic integrated sensor chip for measing three parameters of pressure difference, absolute pressure and temperature and its making process |
| CN201993195U (en) * | 2010-12-29 | 2011-09-28 | 沈阳仪表科学研究院 | Silicon capacitance pressure difference sensor capable of outputting multiple parameters |
-
2010
- 2010-12-29 CN CN 201010610931 patent/CN102168994B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6098328A (en) * | 1983-11-02 | 1985-06-01 | Yokogawa Hokushin Electric Corp | Temperature and static pressure compensating method of pressure and differential pressure transmitter |
| JPH109987A (en) * | 1996-06-19 | 1998-01-16 | Shimadzu Corp | Electrostatic capacity type pressure-difference pressure transmitter |
| CN2327991Y (en) * | 1998-06-03 | 1999-07-07 | 王洪业 | Transducer for measuring static pressure, pressure difference and temperature simultaneously |
| CN2667667Y (en) * | 2003-08-22 | 2004-12-29 | 沈阳仪表科学研究院 | Silicon capacitive pressure sensor |
| CN2758712Y (en) * | 2004-12-01 | 2006-02-15 | 中国石油天然气集团公司 | Intelligent differential pressure transmitter |
| CN1869599A (en) * | 2005-05-27 | 2006-11-29 | 上海自动化仪表股份有限公司 | Multi-parameter sensor for measuring differential pressure/pressure/temp |
| CN1974372A (en) * | 2006-12-15 | 2007-06-06 | 沈阳仪表科学研究院 | Monolithic integrated sensor chip for measing three parameters of pressure difference, absolute pressure and temperature and its making process |
| CN201993195U (en) * | 2010-12-29 | 2011-09-28 | 沈阳仪表科学研究院 | Silicon capacitance pressure difference sensor capable of outputting multiple parameters |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107849871A (en) * | 2015-08-04 | 2018-03-27 | 爱信精机株式会社 | Operate the calibrating installation of input detection device and capacitance sensor |
| CN107849871B (en) * | 2015-08-04 | 2021-03-12 | 爱信精机株式会社 | Operation input detection device and calibration device for capacitance sensor |
| CN105181187A (en) * | 2015-09-09 | 2015-12-23 | 沈阳仪表科学研究院有限公司 | Silicon-based pressure sensor and manufacturing method thereof |
| CN105181187B (en) * | 2015-09-09 | 2018-07-10 | 沈阳仪表科学研究院有限公司 | Silicon substrate pressure sensor and its manufacturing method |
| CN106813810A (en) * | 2017-01-17 | 2017-06-09 | 中南大学 | The method for separating flexible temperature pressure sensing component temperature pressure-responsive |
| CN108871483A (en) * | 2018-07-13 | 2018-11-23 | 深圳电通纬创微电子股份有限公司 | A kind of corrosion-resistant fuel gas table temperature and pressure compensation integrated transducer and its manufacturing method |
| CN112729661A (en) * | 2020-12-29 | 2021-04-30 | 北京金迈捷科技有限公司 | Ultralow temperature pressure sensor with temperature signal output function |
| CN112729661B (en) * | 2020-12-29 | 2024-03-19 | 北京金迈捷科技有限公司 | Ultralow-temperature pressure sensor with temperature signal output |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102168994B (en) | 2013-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201993195U (en) | Silicon capacitance pressure difference sensor capable of outputting multiple parameters | |
| CN101566514B (en) | Integrated temperature thin film pressure sensor | |
| CN201653608U (en) | High-intelligent resistance strain gage sensor | |
| CN102168994B (en) | Silicon capacitance differential pressure transducer with multi-parameter and compensation method of static pressure influence | |
| CN104374453B (en) | Intelligently amendment weighing sensor and its weighing technique of multichannel digital uneven loading error | |
| CN201707167U (en) | Ultralow-temperature diaphragm pressure/temperature compound sensor | |
| CN106525264A (en) | Sputtering thin film temperature-pressure composite sensor and manufacturing method thereof | |
| CN206772457U (en) | Sputtered film temperature and pressure compound sensor | |
| CN1176693A (en) | Pressure sensors and pressure transmitters | |
| CN211602261U (en) | Ceramic pressure sensor | |
| CN103454032A (en) | Pressure sensitive core with thermistor | |
| CN106248296A (en) | The multivariate of pressure transmitter, alternating temperature scaling method | |
| CN101644612B (en) | Programmable pressure sensor | |
| CN107192488A (en) | A kind of broadband cutting force measurement device | |
| CN107677200A (en) | High-precision strain measurement system | |
| CN103196600A (en) | Mathematical temperature compensation method of strain type load sensor | |
| CN100427911C (en) | Static pressure influence compensation method of capacitive differential pressure sensor | |
| CN101694409A (en) | Method for manufacturing all-silica pressure chips of SOI oil pressure sensor | |
| CN201449300U (en) | Programmable pressure sensor | |
| CN103995151A (en) | Composite eight-beam high-frequency-response acceleration sensor chip | |
| CN201772965U (en) | Soi engine oil pressure sensor | |
| CN201060079Y (en) | Intelligent differential pressure cell | |
| CN209177990U (en) | The pressure and displacement integrated form MEMS sensor structure of four beam diaphragms and concentric cylinder | |
| CN107643145A (en) | One kind diffusion silicon high static pressure little differential pressure sensor | |
| CN203672371U (en) | Quartz flexure accelerometer based dipmeter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130109 Termination date: 20131229 |