CN103712721B - A kind of SOI piezoelectric strain gauge and preparation method thereof - Google Patents
A kind of SOI piezoelectric strain gauge and preparation method thereof Download PDFInfo
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- CN103712721B CN103712721B CN201310719756.7A CN201310719756A CN103712721B CN 103712721 B CN103712721 B CN 103712721B CN 201310719756 A CN201310719756 A CN 201310719756A CN 103712721 B CN103712721 B CN 103712721B
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 30
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- 229910000831 Steel Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- IGTHEWGRXUAFKF-NVJADKKVSA-N 1-cyclopropyl-8-(difluoromethoxy)-7-[(1r)-1-methyl-2,3-dihydro-1h-isoindol-5-yl]-4-oxoquinoline-3-carboxylic acid;methanesulfonic acid;hydrate Chemical compound O.CS(O)(=O)=O.N([C@@H](C1=CC=2)C)CC1=CC=2C(C=1OC(F)F)=CC=C(C(C(C(O)=O)=C2)=O)C=1N2C1CC1 IGTHEWGRXUAFKF-NVJADKKVSA-N 0.000 description 1
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- DBRHOLYIDDOQSD-UHFFFAOYSA-N alumane;lead Chemical compound [AlH3].[Pb] DBRHOLYIDDOQSD-UHFFFAOYSA-N 0.000 description 1
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Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a kind of SOI piezoelectric strain gauge and preparation method thereof, the silicon substrate of described strain gauge is monocrystalline silicon or polycrystalline silicon material, form silicon dioxide insulator film in surface of silicon, form monocrystalline silicon again on insulation film surface or polysilicon membrane is made material as force sensing resistance, form 2 or 4 force sensing resistances that electric property insulate completely by semiconductor planar technique, by interior metal lead wire, force sensing resistance is connected into half-bridge or full-bridge Hui Sidun circuit. Metal lead is in the monocrystalline silicon of thick-boron doped or the walking of polysilicon layer surface. Silicon dioxide insulator film resiativity is up to 1015 Ω-cm, and ensureing does not have electricity to leak between force sensing resistance. Therefore can be used in the operating temperature war industry above up to 300 DEG C. Because the monocrystalline silicon or the polycrystalline silicon material that have adopted high concentration are made force sensing resistance, so the temperature coefficient at sensitivity and zero point has reached more than 10-6VB/ DEG C. There is the good characteristic of high-temperature low-drift.
Description
Technical field
The present invention relates to micro-electronics pressure sensor field, particularly a kind of SOI piezoelectric strain gauge and preparation method thereof.
Background technology
In, in low-quantum pressure sensor field, adopt back side pressurized or oil-filled body stainless steel ripple barrier film front to be subject toPress two kinds of version detection system pressure to change. But all non-refractories of these two kinds of versions, can only be less than 125 DEG C of environmentLower work, and overload capacity is poor, can only transship under 3-5 times of pressure and work. In the high pressure sensor field that is greater than 6-200MpaIn, encapsulating structure becomes the outstanding shield that gives. Cannot support the leakage problem under resistance high-pressure situations by the sealing of O type circle. Adopt pressure-sensitiveBridge resistance, is made on 17-4PH stainless steel pedestal, then pedestal is freezed by techniques such as argon arc welding, electron beam, high energy laser beamsIn the interface end of stainless steel casing, in the time that pressure is introduced from the 17-4PH stainless steel pedestal back side, just overcome and leaked and transshippedLittle problem.
In high pressure sensor, there are at present two kinds of versions: one is sputtered film structure both at home and abroad; Another kind is ultrathinMicro-clinkering structure of strain gauge. Realize sputtered film structure and micro-clinkering structure in the elastic membrane district of 17-4PH stainless steel pedestal, then with notRust outer steel shell freezes and is connected together, and can stand several thousand kilograms of pressure and air tight while ensureing pedestal back side pressurized, and pedestal knotIn structure, the positive force sensing resistance of making produces change in resistance because being subject to effect of stress. Sputtered film structure is at 17-4PH stainless steelPedestal elastomeric film surface, adopts sputtering technology, first does at the silicon oxynitride film of stainless steel elastomeric film surface sputter one deck insulationInsulation base, then sputter constantan or platinum film in the above, adopt photoetching and dry etching technology, and constantan or platinum layer are carvedLose into four force sensing resistances, then connect into a resistance bridge with metal connecting line. But this infrastructure cost is high, yield poorly,Yield rate is low, uniformity is poor, resistance to insulated electro is forced down, and is unwell to large-scale production.
Therefore oneself is replaced by micro-clinkering structure of ultrathin strain gauge gradually in recent years. The ultrathin type of using in micro-clinkering structureStrain gauge adopts the way manufacture that combines of integrated circuit planar technology and micromechanical process technology, can advise greatly and touch production, consistentProperty is good. But the at present domestic production that entirely maintains micro-clinkering structure by import of this ultrathin strain gauge.
General monocrystalline-silicon pressure transducer at present, adopts the isolation of P-N knot between bridge resistance,, have P-N knot reverse leakageStream, causes output temperature drift large, can not under hot environment, work. Therefore need to meet sensor at hot operation ringRequired pressure sensor under border especially has more active demand in Aero-Space war industry. And at the quick electricity of powerBetween resistance, must, by the ohmic contact hole of aluminium silicon lead-in wire contact resistance end points, just likely form a complete Hui Sidun bridgeRoad. Aluminium silicon lead is in conventional design, and lead-in wire usually can collapse from an ohmic contact hole to another ohmic contact hole and get over twoThe individual step highly not waiting, if the slightly high fracture that will cause lead-in wire of step, component failure.
Therefore, how to design a kind of ultrathin strain gauge that can be applied in high pressure, high-temp pressure sensor and become stateInterior enterprise, producer current in the urgent need to.
Summary of the invention
For addressing the above problem, the object of the present invention is to provide a kind of good stability, can be applied to high pressure, high temperature pressureUltrathin SOI piezoelectric strain gauge in sensor and preparation method thereof.
The present invention solves the technical scheme that its problem adopts:
A kind of SOI piezoelectric strain gauge, comprises piezoelectric strain gauge, and described piezoelectric strain gauge comprises SOI silicon-on-insulator, described inSOI silicon-on-insulator comprises silicon substrate, silicon dioxide insulator film and silicon thin film from bottom to up successively, on described silicon thin film, is provided withThe force sensing resistance of two or four, described force sensing resistance is provided with lead passage, in described lead passage, is provided with metalLead, also comprises the aluminium electrode for being connected with sensor chip, and described force sensing resistance interconnects by metal leadAnd/or connect to form pressure measurement circuitry with aluminium electrode.
Further, described force sensing resistance is monocrystalline silicon force sensing resistance or polysilicon force sensing resistance.
Further, described silicon thin film is the P-type conduction layer that is mixed with boron atom.
Further, on the silicon thin film of described lead passage below, be formed with the dense boron diffusion matrix of its correspondence.
Further, described metal lead is aluminium silicon lead-in wire or chromium nickel gold wire.
Particularly, described silicon substrate and silicon thin film are made up of monocrystalline silicon or polysilicon.
Further, the upper surface of described silicon thin film and force sensing resistance is coated with one deck silicon nitride film, described silicon nitrideFilm and silicon dioxide insulator film form compound inslation matrix.
Improve as above-mentioned one, comprise two force sensing resistances, between described force sensing resistance, form half-bridge Hui Sidun and surveyAmount circuit.
Improve as above-mentioned another kind, comprise four force sensing resistances, form each other full-bridge Hui Sidun measuring circuit.
Improve as above-mentioned another kind, comprise two force sensing resistances, metal is passed through respectively at the two ends of each force sensing resistanceLead is connected to form parallel independence to resistance with aluminium electrode.
Further, described piezoelectric strain gauge is arranged on the round and elastic film of 17-4PH stainless steel elastic base, described inForce sensing resistance be divided into two groups, wherein one group of force sensing resistance is parallel with the tangent line of round and elastic film, other one group of force sensing resistance withThe tangent line of above-mentioned round and elastic film is perpendicular.
Preferably, described force sensing resistance is arranged at the peak stress district of round and elastic film edge.
Further, described piezoelectric strain gauge is linked as one by micro-molten technology and the 17-4PH stainless steel elastic base of glass dustBody
A preparation method for SOI piezoelectric strain gauge, is characterized in that comprising the following steps:
Step 1, get SOI silicon-on-insulator, described SOI silicon-on-insulator comprises two-layer monocrystalline silicon piece and between two-layer monocrystalline siliconSilicon dioxide insulator film, the monocrystalline silicon piece attenuate on upper strata is become to 2-5 μ m silicon thin film;
Step 2, Surface Creation oxide layer by thermal oxide at SOI silicon-on-insulator make concentrated boron area by lithography in oxide layerWindow, with boron latex source coated surfaces, forms dense boron diffusion matrix by thermal diffusion;
Step 3, mix boron atom in silicon thin film, become P-type conduction layer, and press the resistance design of force sensing resistanceRequirement, the size of adjusting P-type conduction layer square resistance;
Step 4, by thermal oxide regeneration oxide layer on the 2-5 μ of SOI silicon-on-insulator upper surface layer m silicon thin film, pass throughPhotoetching and dry etching technology anti-carve and form monocrystalline silicon force sensing resistance;
Step 5, make outward extending lead passage by lithography at the electrode lead hole place of monocrystalline silicon force sensing resistance;
Step 6, go out alusil alloy layer at SOI silicon-on-insulator surface evaporation, adopt photoetching technique, alusil alloy layer etchingBecome metal lead and aluminium electrode, make force sensing resistance mineralization pressure measuring circuit.
Further, further comprising the steps of after step 6: to adopt corrosive liquid that the silicon substrate at the SOI silicon-on-insulator back side is subtractedBe as thin as 10-15 μ m.
Further, further comprising the steps of between step 4 and step 5:
At surface deposition one deck silicon nitride film of silicon thin film and monocrystalline silicon force sensing resistance, described silicon nitride film and silicon are thinFilm forms compound inslation matrix, monocrystalline silicon force sensing resistance is covered simultaneously.
Further, in step 5, adopt photoetching technique make electrode lead hole window by lithography, first use the nitrogenize of F4C dry etchingSilicon thin film, then rinses the silicon dioxide layer in window with photoetching corrosive liquid.
Further, further comprising the steps of between step 4 and step 5, adopt photoetching technique to make a point film trap window by lithography, soPost-etching goes out a point film trap.
Preferably, described piezoelectric strain gauge is installed in 17-4PH stainless steel elastomeric film surface, at stainless steel elastic base17-4PH stainless steel elastomeric film surface select peak stress district, glass dust emulsion is coated in to peak stress by silk screen print methodDistrict, is then placed on suitable high-temperature region stainless steel pedestal and gives processing, forms the transparent glassy layer of skim, should pressureBecome meter and be placed on glassy layer surface, carry out high temperature and process again, make strain gauge pass through glassy layer medium and stainless steel surface of elastomer and glueKnot together.
The invention has the beneficial effects as follows:
A kind of SOI piezoelectric strain gauge that the present invention adopts, by the SOI film-type structure forming based on SOI silicon-on-insulator,Its thickness can greatly reduce, and is only 10-15 micron, and thin because be formed with silicon dioxide insulator between silicon substrate and silicon thin filmFilm, has replaced the isolation of P-N knot, has reduced device electric leakage at high temperature, thereby has improved the operating temperature range of sensor, energyBe applicable to use in high-temp pressure sensor, in addition, the present invention by being provided with lead passage, power on force sensing resistanceQuick resistance interconnects by the metal lead in lead passage and/or connects to form pressure measurement circuitry with aluminium electrode,Therefore below the aluminium lead to hot pressing pin, just there is not step from force sensing resistance ohmic contact hole, and metal leadWith hot pressing pin all as force sensing resistance along stretching part, together with all linking up in the design of full-bridge design and half-bridge, form one wholeBody, can effectively improve the stability of piezoelectric strain gauge.
The preparation method of a kind of SOI piezoelectric strain gauge that the present invention adopts, forms monocrystalline silicon or polycrystalline at silicon film surfaceSilicon thin film is as force sensing resistance manufactured materials. Form 2 or 4 power that electric property insulate completely by semiconductor planar techniqueQuick resistance. By metal lead, force sensing resistance is connected into half-bridge or full-bridge Hui Sidun circuit. Due to metal lead beThe monocrystalline silicon of thick-boron doped or the walking of polysilicon layer surface, silicon dioxide insulator film resiativity is up to 1015 Ω-cm, and guarantee power is quickBetween resistance, do not have electricity to leak. Therefore can be used in the operating temperature war industry above up to 300 DEG C, so sensitivity and zeroThe temperature coefficient of point has reached more than 10-6VB/ DEG C, has the good characteristic of high-temperature low-drift.
Brief description of the drawings
Below in conjunction with accompanying drawing and example, the invention will be further described.
Fig. 1 is SOI piezoelectric strain gauge structural representation of the present invention;
Fig. 2 is that SOI piezoelectric strain gauge of the present invention is arranged on the mounting structure schematic diagram on stainless steel pressure pedestal;
Fig. 3 is the compound version schematic diagram of 3 kinds of embodiment strain gauges of the present invention;
Fig. 4 is position relationship and the stress distribution schematic diagram of round and elastic film of the present invention and force sensing resistance;
Fig. 5 is the schematic diagram of SOI silicon-on-insulator of the present invention;
Fig. 6 is the schematic diagram that generates oxide layer on SOI silicon-on-insulator of the present invention;
Fig. 7 is the schematic diagram that makes concentrated boron area window on SOI silicon-on-insulator of the present invention by lithography;
Fig. 8 is the schematic diagram that forms dense boron diffusion matrix on SOI silicon-on-insulator of the present invention;
Fig. 9 is the schematic diagram that forms monocrystalline silicon force sensing resistance on SOI silicon-on-insulator of the present invention;
Figure 10 is the schematic diagram of cvd nitride silicon thin film on SOI silicon-on-insulator of the present invention;
Figure 11 is the schematic diagram of photoetching burst groove on SOI silicon-on-insulator of the present invention;
Figure 12 is the schematic diagram that erodes away point film trap on SOI silicon-on-insulator of the present invention;
Figure 13 is the schematic diagram of photoetching lead passage on SOI silicon-on-insulator of the present invention;
Figure 14 is the schematic diagram of AM aluminum metallization silicon alloy layer on SOI silicon-on-insulator of the present invention;
Figure 15 is the schematic diagram of photoetching aluminum lead and aluminium electrode on SOI silicon-on-insulator of the present invention;
Figure 16 is the schematic diagram that SOI silicon-on-insulator thinning back side of the present invention only divides film trap.
Detailed description of the invention
Shown in Fig. 1, a kind of SOI piezoelectric strain gauge of the present invention, comprises piezoelectric strain gauge 104, described pressure-strainMeter 104 comprises SOI silicon-on-insulator, and described SOI silicon-on-insulator comprises that thickness is only the silicon substrate of 10-15 μ m from bottom to up successively1, the silicon dioxide insulator film 2 that thickness is 1um and thickness are 2-5 μ m silicon thin film 3, on described silica membrane 2, adopt siliconStrong technology and the above-mentioned silicon thin film 3 of thinning technique formation 2-5 micron of closing of silicon, wherein silicon substrate 1 and silicon thin film 3 are monocrystalline silicon thin filmOr polysilicon membrane, on silicon thin film 3, be formed with two or four electric property with oxidation photoetching dry etching technology and insulate completelyForce sensing resistance 4, the upper surface of described silicon thin film 3 and force sensing resistance 4 is coated with one deck silicon nitride film 7, described silicon nitride is thinFilm 7 forms compound inslation matrix with silicon dioxide insulator film 2, and described silicon nitride film 7 and force sensing resistance 4 are provided with to extensionThe lead passage 41 of stretching, the dense boron that is formed with its correspondence on the silicon thin film 3 of described lead passage 41 belows spreads matrix 6,In described lead passage 41, be provided with metal lead 5, wherein metal lead 5 can draw for aluminium silicon lead-in wire or chromium nickel goldLine. Also comprise hot pressing pin 105 and aluminium electrode 51 for being connected with sensor chip, described force sensing resistance 4 is by drawing in metalLine 5 and thick-boron doped diffusion matrix 6 lead-in wires interconnect and/or connect to form pressure measurement circuitry with aluminium electrode 51.
Further, the material of described force sensing resistance 4 can be monocrystalline silicon, polysilicon, constantan, platinum copper or other metal levelsComposition.
Further, described silicon thin film 3 is for being mixed with the P-type conduction layer of boron atom.
Further, the edge of described piezoelectric strain gauge is provided with point film trap 9 of being convenient to carry out burst in the time making.
SOI silicon-on-insulator is a kind of silicon materials substrate of current domestic external enwergy large-scale production. It is by two wafer siliconSheet closes technology by (SBD) silicon-silicon bond and reduction process is realized upper epidermis (a few micron thickness) silicon fiml and bottom silicon substrate 1Solid-fixed closing between (0.4mm – 1mm), centre separates by the silicon dioxide insulator film 2 of one deck 1 micron thick. This SOI is exhaustedEdge silicon chip is widely used on high speed integrated circuit at present in the world. And the present invention floats for the manufacture of super thin type high temperature is lowMove silicon substrate 1 substrate of piezoelectric strain gauge.
In the time making or customize SOI silicon-on-insulator, the force sensing resistance 4 of upper epidermis adopts the body silicon of high concentration to make material. AdoptMake force sensing resistance 4 materials with high concentration body silicon, advantage is that Impurity Distribution is even. Because it is by pulling of crystals ingot section systemBecome, do not have thermal diffusion or ion beam to inject and cause the phenomenon that Impurity Distribution is inhomogeneous. Ensure force sensing resistance 4 resistances on Si Geqiao roadSymmetry equivalent, ensure little, zero point at strain gauge high conformity, Hui Sidun bridge road output zero point on electric property and Sensitivity TemperatureThe advantages such as degree coefficient is little. Shortcoming is that flexible property is poor. Thermal diffusion or ion beam inject and can adjust by the diffusion technique that distributes againThe resistance of joint square resistance meets designing requirement.
Between force sensing resistance 4, must, by the ohmic contact hole of aluminium silicon lead-in wire contact resistance end points, just likely formA complete Hui Sidun bridge road. Aluminium silicon lead is in conventional design, and lead-in wire is from an ohmic contact hole to another ohmContact hole usually can collapse and get over two steps that highly do not wait, if the slightly high fracture that will cause lead-in wire of step, component failure. ThisThe extension matrix and hot pressing pin 105 matrixes that in invention, adopt dense boron diffusion matrix 6 to go between as force sensing resistance 4, therefore quick from powerBelow the metal lead 5 of resistance 4 ohmic contact hole between hot pressing pin 105, just not there is not step, and metal lead 5With hot pressing pin 105 all as force sensing resistance 4 along stretching part, together with all linking up, form one in the design of full-bridge design and half-bridgeEntirety, can effectively improve the stability of piezoelectric strain gauge. As shown in Figure 3. Ohmic contact hole from being only originally 4 liang of force sensing resistancesOn individual end points, to expand as metal lead 5 and hot pressing pin 105 be ohmic contact hole to two very little contact holes below entirely, and metalLead 5 design sizes are 4um than the large 8um(hypothesis of Ohmic contact hole dimension lithography registration precision), establishing of metal lead 5In meter region, adopt high concentration impurities source to carry out boron diffusion, ensure that there is very high surface impurity concentration on surface, this just ensures metalLead 5 has extraordinary Ohmic contact with ohmic contact hole, has ensured the reliable and stable and high finished product rate of device.
Silica is a kind of extraordinary insulator, but it has a kind of compression coefficient, when ultra-thin shape is counted in strainWhen state, this compression just becomes the deformation factor that can not ignore. The present invention is at the upper table of described silicon thin film 3 and force sensing resistance 4Face is coated with one deck silicon nitride film 7, and described silicon nitride film 7 forms compound inslation matrix with silicon dioxide insulator film 2,The rise silicon nitride of stress of the topped one deck of silica surface, just can balance silica compression, avoids the distortion of strain gauge,In addition force sensing resistance 4 is positioned in the middle of silicon nitride film 7 and silicon dioxide insulator film 2, has ensured the stable of force sensing resistance 4Reliably.
Shown in Fig. 2, also comprise 17-4PH stainless steel pedestal, described 17-4PH stainless steel pedestal claims again precipitation hardenableStainless steel elastic base, the extraordinary stainless steel material of a kind of 17-4PH coefficient of elasticity, described elastic base 8 comprises cup 82,The middle front at described cup 82 tops is thinner stainless steel round and elastic film 81, on described round and elastic film 81 by high temperature placeReason forms the transparent glassy layer 83 of skim, and described piezoelectric strain gauge 104 is placed on glassy layer 83 surfaces by after high-temperature processForm micro-clinkering structure with glassy layer 83, round and elastic film 81, make piezoelectric strain gauge can pass through glassy layer 83 and the circular bullet of stainless steelFilm 81 is bonding is connected for property. Wherein in pressure base, be also provided with PCB wiring board 84, be arranged at the sensing on PCB wiring board 84Device chip draws silk by aluminium or spun gold (not providing in figure) is connected with the aluminium electrode 51 of piezoelectric strain gauge.
Further, described force sensing resistance 4 is arranged at the peak stress district at round and elastic film 81 edges.
Described SOI piezoelectric strain gauge has respectively the detailed description of the invention of three kinds of different structures, and wherein Fig. 3 is that three kinds of pressure shouldBecome the compound version schematic diagram of meter:
Embodiment 1, described pressure-strain is counted half-bridge strain gauge, and area is 1.5mm*0.5mm. Be applicable to 17-4PH elasticityMembrane aperture is the elastic base 8 of ￠ 3.3-3.5mm. Comprise two force sensing resistances 4, between described force sensing resistance 4, form half-bridge favourThis measuring circuit, in the time of elastic base 8 back pressurized, wherein negative near the force sensing resistance 4 of round and elastic film 81 framesThe effect of stress, its resistance can diminish, the effect of receiving direct stress near the force sensing resistance 4 at round and elastic Mo81 center, its resistanceIt is large that value becomes. When the fixed resistance in half-bridge Hui Sidun measuring circuit and sensor chip that these two force sensing resistances 4 form connectsWhile becoming Hui Sidun full-bridge circuit, bridge road disequilibrium, pressure being subject to back of Qiao road output generation is directly proportionalThe signal of telecommunication.
If Vcc is supply voltage, △ R1/R1=△R4/R4For edge resistance change rate, △ R2/R2=△R3/R3Centered by electricityResistive rate, therefore stressed rear bridge output voltage is:
△V=〔(△R1/R1)－(△R2/R2)〕+〔(△R4/R4)－(△R3/R3)〕
When bridge resistance is under symmetric case, when R1=R2=R3=R4, stressed rear bridge output voltage is: △ V=2〔(△R1/R1)－(△R2/R2)〕。
Above-mentioned half-bridge strain gauge is subject to the restriction of round and elastic film 81 concrete sizes in the use. When elastic membrane diameter becomes largeTime, R2 and R3 will depart from peak stress district, cause sensitivity decline and nonlinear factor to become large. This strain gauge is at wide rangeHigh pressure field in widely application. In the time that transducer range requirement is lower, in order to ensure certain sensitivity and signal outputAmplitude, in the situation that round and elastic film 81 thickness machining accuracies are restricted, only reliable increasing round and elastic film 81 areasGuarantee has enough sensitivity output. For example diameter is put into 10mm even larger above. In this case, above-mentioned halfBridge strain gauge just cannot be suitable for.
Embodiment 2, described pressure-strain is counted full-bridge strain gauge, and area is 1mm2. Comprise four force sensing resistances 4, power is quickResistance 4 forms full-bridge Hui Sidun measuring circuit each other. As shown in Figure 4, two resistance R 2, R3 and round and elastic film wherein81 tangent line parallels, and the tangent line of other two resistance R 1, R4 and above-mentioned round and elastic film 81 is perpendicular (is round and elastic filmRadial direction), this full-bridge strain gauge uses flexibility large, is applicable to the micro-molten pressure sensor of high temperature of middle lower range. ThisBright middle full-bridge strain gauge just can make up the defect of above-mentioned half-bridge strain gauge. The micro-fusible circle that is attached to of glass dust for full-bridge strain gaugeElastic membrane 81 edge stress peak region, had so both avoided the large winding degree effect of bringing because round and elastic film 81 areas are excessiveShould, ensure again the linearity of sensor and enough sensitivity simultaneously. Resistance position and the stress of above-mentioned this cup type structureDistribute as shown in Figure 4. As seen from the figure, radially more to approach edge output larger for resistance, and nonlinearity erron field is wider.
Embodiment 3, described pressure-strain is counted the parallel double strain ga(u)ge that the free degree is very large, comprises two force sensing resistances4, the two ends of each force sensing resistance 4 are connected to form parallel independence to resistance by metal lead 5 and aluminium electrode 51 respectively. Due toIt is parallel double strain ga(u)ge, can paste in the peak stress district at round and elastic film 81 edges. It can independently be pasted intoRadial stress district, also can independently paste into tangential stress district. No matter round and elastic film 81 radiuses are much, can obtain the bestSensitivity and the linearity.
A preparation method for above-mentioned SOI piezoelectric strain gauge, is characterized in that comprising the following steps:
1, make SOI silicon-on-insulator, described SOI silicon-on-insulator comprises that thickness is the two-layer of 0.3-0.5 millimeter single-sided polishingMonocrystalline silicon piece, wherein a slice polished surface thermal oxide growth 1 micron thick silicon dioxide insulator film 2, then at H2SO4:H2O2=In 1:1 solution, soak several hours, make surface form a large amount of OH-atomic groups, then after cleaning, dry surface, immediatelyThe burnishing surface of two monocrystalline silicon pieces is combined, from the pressurization of sheet center, two silicon chips is integrated. Be placed on again 900 °First wet-oxygen oxidation three hours in C oxidation furnace, then dry-oxygen oxidation four hours, be bonded together two silicon chips firmly. By upper strataMonocrystalline silicon piece attenuate become to 2-5 μ m to become silicon thin film 3, and polished surface, becomes SOI silicon-on-insulator stand-by, as shown in Figure 5. InstituteState SOI silicon-on-insulator and also can adopt SIMOX technology or SMART-CUT technology to realize, but equipment requirement is relatively high.
2, Surface Creation 4000 oxide layers 101 at SOI silicon-on-insulator by thermal oxide, as shown in Figure 6, then at oxygenChange on layer 101 and make concentrated boron area window 102 by lithography, as shown in Figure 7, with boron latex source coated surfaces, after oven for drying, 1040In DEG C boron diffusion furnace, protect with nitrogen, thermal diffusion 30 minutes, forms dense boron diffusion matrix 6, as shown in Figure 8; Then use rare HFSolution rinses surface boron silex glass. For sheet, ensure square resistance R s < 10 Ω/ with four-point probe measurment.
3, in 900 ° of C oxidation furnaces, make protective gas with dry carrier of oxygen, activate boron atom 30 minutes. Then rinse surfaceOxide layer, cleaning, drying is stand-by.
4, adopt ion beam injection technique or thermal diffusion technology, in silicon thin film 3, mix boron atom, become P type and leadElectricity layer, and the resistance designing requirement of pressing force sensing resistance 4, the size of adjusting P-type conduction layer square resistance, makes it meet design and wantsAsk.
5, by thermal oxide regeneration oxide layer on the 2-5 μ of SOI silicon-on-insulator upper surface layer m silicon thin film, by photoetchingAnti-carve and form monocrystalline silicon force sensing resistance 4 with dry etching technology,, make the thick thermal oxide layer of vast district exposure 1um beyond resistance area,As shown in Figure 9.
6, the nitrogen at surface deposition one deck 1500 of silicon thin film 3 and monocrystalline silicon force sensing resistance 4 by LPCVD deposition techniqueSiClx film 7, described silicon nitride film 7 forms compound inslation matrix with silicon thin film 3, monocrystalline silicon force sensing resistance is covered simultaneouslyCome as shown in figure 10, can ensure that force sensing resistance 4 has the good special domestic animals such as high temperature resistant, high pressure resistant, stable.
7, adopt photoetching technique, on silicon nitride film 7, the position of point film trap 9 makes a point film trap window 91 by lithography, as figureShown in 11, first use the silicon nitride film 7 in F4C dry etching window, then rinse the titanium dioxide in window with photoetching corrosive liquidSilicon layer, erodes away point film trap 9, as shown in figure 12.
8, adopt photoetching technique to make outward extending contact conductor by lithography at the electrode lead hole place of monocrystalline silicon force sensing resistanceHole window, first uses F4C dry etching silicon nitride film 7, then rinses the silicon dioxide layer in window with photoetching corrosive liquid, formsLead passage 41, as shown in figure 13.
9,, at SOI silicon-on-insulator surface AM aluminum metallization silicon alloy layer 103, thickness 1.5-2.0um, as shown in figure 14, adopts lightLithography, is etched into metal lead 5 and aluminium electrode 51 alusil alloy layer 103, makes force sensing resistance 4 mineralization pressures measure electricityRoad, as shown in figure 15.
10, front is protected, the back side adopts KOH corrosive liquid corrosion silicon substrate 1 to 10-15um, makes piezoelectric strain gaugeSeparate, form the SOI high-temperature low-drift piezoelectric strain gauge of monolithic, as shown in figure 16.
11, select peak stress district on the surface, stainless steel elastic region of stainless steel elastic base 8, use silk screen print method glassGlass powder emulsion is coated in peak stress district, then stainless steel elastic base 8 is placed on to suitable high-temperature region and gives processing, formsThe glassy layer 83 that skim is transparent, is placed on glassy layer 83 surfaces piezoelectric strain gauge 104, carries out high temperature and processes, makes strain gaugeBe bonded together by glassy layer 83 and stainless steel elastic base 8 surfaces.
When making above-mentioned pressure-strain timing, needing thickness is that 0.4-0.6mm six inch wafers are through attenuate, finallyBe separated into 23500 thickness only 10-15um size only the ultra-thin ultramicroscopic strain gauge of 0.5*1.5mm be a work that difficulty is higherSkill operation. Concrete technology flow process is as follows:
1, in environment purification, first with Primer reagent even front that is coated in wafer on glue evenning table of imported from America,On 205 DEG C of hot plates, cure 5 minutes. In operating process, prevent that dust from entering silicon chip surface, otherwise will cause around dust pointForm a pin hole, corrosive liquid will enter into silicon chip surface from pin hole, and around a sheet of strain gauge is destroyed to cause dust, makesBecome component failure.
2, in environment purification, then use the front of Protex reagent even painting wafer on glue evenning table of imported from America,On 205 DEG C of hot plates, cure 5 minutes.
3, this wafer is fixed in homemade special fixtures, goes up corrosive agent, corrosion of silicon, until strain gauge pointFilm trap 9 exposes, etch-stop.
4, the wafer after corrosion is placed in organic solvent, wafer is just separated into numerous little foil gauge automatically,Be attached to again the organic solvent on strain gauge surface through anhydrous alcohol solution, then strain gauge be placed in homemade flushing vessel container,With Gao Jing (ρ=18M Ω) deionized water rinsing strain gauge, about about half an hour, until the resistivity of water flowing out > 10M Ω, eventuallyOnly rinse.
5, homemade flushing vessel being put into drying box together with strain gauge dries stand-by.
6, strain gauge is poured on clean filter paper, microscopy strain gauge, that scraps removes, the counting warehouse-in staying.
The above, be preferred embodiment of the present invention, and the present invention is not limited to above-mentioned embodiment, as long asIt reaches technique effect of the present invention with identical means, all should belong to protection scope of the present invention.
Claims (10)
1. a SOI piezoelectric strain gauge, comprises piezoelectric strain gauge, it is characterized in that: described piezoelectric strain gauge comprises SOI SOISheet, described SOI silicon-on-insulator comprises silicon substrate, silicon dioxide insulator film and silicon thin film, described silicon thin film from bottom to up successivelyOn be provided with the force sensing resistance of two or four, described force sensing resistance is provided with lead passage, in described lead passage, establishesBe equipped with metal lead, also comprise the aluminium electrode for being connected with sensor chip, described force sensing resistance is by metal leadInterconnect and/or connect to form pressure measurement circuitry with aluminium electrode.
2. a kind of SOI piezoelectric strain gauge according to claim 1, is characterized in that: the silicon of described lead passage belowOn film, be formed with the dense boron diffusion matrix of its correspondence.
3. a kind of SOI piezoelectric strain gauge according to claim 1, is characterized in that: described silicon thin film and force sensing resistanceUpper surface is coated with one deck silicon nitride film, and described silicon nitride film and silicon dioxide insulator film form compound inslation matrix.
4. a kind of SOI piezoelectric strain gauge according to claim 1, is characterized in that: described piezoelectric strain gauge is arranged at 17-On the round and elastic film of 4PH stainless steel elastic base, described force sensing resistance is divided into two groups, and wherein one group of force sensing resistance is with circularThe tangent line of elastic membrane is parallel, and the tangent line of other one group of force sensing resistance and above-mentioned round and elastic film is perpendicular.
5. a kind of SOI piezoelectric strain gauge according to claim 4, is characterized in that: described force sensing resistance is arranged at circleThe peak stress district at shape elastic membrane edge.
6. a kind of SOI piezoelectric strain gauge according to claim 4, is characterized in that: described piezoelectric strain gauge passes through glassThe micro-molten technology of powder and 17-4PH stainless steel elastic base are connected as a single entity.
7. a preparation method for the arbitrary described SOI piezoelectric strain gauge of claim 1 to 6, is characterized in that comprising following stepRapid:
Step 1, get SOI silicon-on-insulator, described SOI silicon-on-insulator comprise two-layer monocrystalline silicon piece and between two-layer monocrystalline silicon twoSilicon oxide insulation film, becomes 2-5 μ m silicon thin film by the monocrystalline silicon piece attenuate on upper strata;
Step 2, Surface Creation oxide layer by thermal oxide at SOI silicon-on-insulator make concentrated boron area window by lithography in oxide layer,With boron latex source coated surfaces, form dense boron diffusion matrix by thermal diffusion;
Step 3, in silicon thin film, mix boron atom, become P-type conduction layer, and press the resistance designing requirement of force sensing resistance,Regulate the size of P-type conduction layer square resistance;
Step 4, by thermal oxide regeneration oxide layer on the 2-5 μ of SOI silicon-on-insulator upper surface layer m silicon thin film, by photoetchingAnti-carve and form monocrystalline silicon force sensing resistance with dry etching technology;
Step 5, make outward extending lead passage by lithography at the electrode lead hole place of monocrystalline silicon force sensing resistance;
Step 6, go out alusil alloy layer at SOI silicon-on-insulator surface evaporation, adopt photoetching technique, alusil alloy layer is etched into goldBelong to lead and aluminium electrode, make force sensing resistance mineralization pressure measuring circuit.
8. the preparation method of a kind of SOI piezoelectric strain gauge according to claim 7, is characterized in that: step 4 and step 5Between further comprising the steps of:
Surface deposition one deck silicon nitride film, described silicon nitride film and the silicon thin film shape of silicon thin film and monocrystalline silicon force sensing resistanceBecome compound inslation matrix, monocrystalline silicon force sensing resistance is covered simultaneously.
9. the preparation method of a kind of SOI piezoelectric strain gauge according to claim 8, is characterized in that: in step 5, adoptPhotoetching technique makes electrode lead hole window by lithography, first uses F4C dry etching silicon nitride film, then rinses window with photoetching corrosive liquidSilicon dioxide layer in mouthful.
10. the preparation method of a kind of SOI piezoelectric strain gauge according to claim 7, is characterized in that: step 4 and step 5Between further comprising the steps of, adopt photoetching technique make a point film trap window by lithography, then erode away a point film trap.
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| JP7226385B2 (en) * | 2019-04-26 | 2023-02-21 | 長野計器株式会社 | pressure sensor |
| CN116202661B (en) * | 2023-01-10 | 2023-09-29 | 苏州锐光科技有限公司 | Pressure sensor and manufacturing method thereof |
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