CN104880573B - MEMS sensing chips - Google Patents
MEMS sensing chips Download PDFInfo
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- CN104880573B CN104880573B CN201510249774.2A CN201510249774A CN104880573B CN 104880573 B CN104880573 B CN 104880573B CN 201510249774 A CN201510249774 A CN 201510249774A CN 104880573 B CN104880573 B CN 104880573B
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- axis acceleration
- induction area
- acceleration induction
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- piece
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
Abstract
The present invention discloses a kind of MEMS sensing chips, including MEMS acceleration chip, signal processing chip and substrate, MEMS acceleration chip includes lid, micro mechanical system and circuit substrate, the micro mechanical system by X-axis acceleration induction area, Y-axis acceleration induction area and Z axis acceleration induction district's groups into；Y-axis acceleration induction area includes Y-direction " H " shape movement piece, 2 Y-direction moving electrodes and 2 Y-directions with 2 through holes and fixes electrode；Z axis acceleration induction area includes quality stick and the support shaft for being used to support quality stick center；Substrate pad opens up circuit substrate upper surface and is located at lid side, and the through hole is square, and the X moves piece upper and lower end to " H " shape and is equipped with the first convex block, which is located between 2 the first limiting sections of the circuit substrate.MEMS sensing chips of the present invention effectively prevent product from avoiding X-axis, the damage of Y-axis acceleration induction area internal structure under the action of acceleration, effectively reduce stress damage of the external force to chip.
Description
Technical field
The present invention relates to acceleration transducer technical field, and in particular to a kind of MEMS sensing chips.
Background technology
The research of acceleration transducer is quickly grown in recent years, various performances, range high-range acceleration transducer oneself
Through report in succession.But acceleration transducer is very high to anti high overload ability and intrinsic frequency requirement, resists exceed under normal conditions
Loading capability requirement can bear hundreds of thousands range shock loading, and intrinsic frequency requirement is up to tens kHz, or even kHz up to a hundred.Cause
This, MEMS high-range acceleration transducers usually cause structural failure since anti high overload ability is poor in the application.To protect
Reliability of the MEMS high-range acceleration transducers in application is demonstrate,proved, the encapsulation of MEMS high-range acceleration transducers just seems outstanding
To be important.Practice have shown that existing sensor packaging techniques generally existing anti high overload energy force difference, intrinsic frequency are low and encapsulate
The problem of poor reliability, i.e., running into evil using the MEMS high-range acceleration transducers after the encapsulation of existing sensor packaging techniques
During bad application environment, often there is shell rupture, the problems such as cover board depression, chip come off from shell substrate, wire breaking.Base
In this, it is necessary to a kind of MEMS sensing chips are invented, to ensure reliability of the acceleration transducer in application.
The content of the invention
It is an object of the present invention to provide a kind of MEMS sensing chips, this MEMS sensing chip improves the reliability of device and has
Effect reduces stress damage of the external force to chip.
To reach above-mentioned purpose, the technical solution adopted by the present invention is：A kind of MEMS sensing chips, including MEMS acceleration
Chip, for filtering interference signal and handling the signal processing chip and substrate of inductive signal, the MEMS acceleration chip by
Lid, micro mechanical system and the circuit substrate for producing inductive signal, the micro mechanical system is by X-axis acceleration induction area, Y-axis
Acceleration induction area with for sensing the Z axis acceleration induction district's groups of extraneous Z axis movement into the lid and circuit substrate surrounding
Edge is bonded by sealant layer so as to form an annular seal space, and the micro mechanical system is located in annular seal space and on circuit substrate
Surface, the height of the annular seal space is 45 ~ 55 μm；
The X-axis acceleration induction area includes the X with 2 through holes and moves piece, 2 X to moving electrodes and 2 to " H " shape
A X is to electrode is fixed, and each one end is respectively installed to the left and right end that X moves piece to " H " shape for the first spring and second spring, the
Each the other end is respectively installed on the circuit substrate for one spring and second spring, and 2 X are located at respectively to moving electrodes
X is moved in 2 through holes of piece and can move piece to " H " shape with the X and move to " H " shape, the X to fixation electrode and X to
Moving electrodes set face-to-face and its in X to the underface of moving electrodes；
The Y-axis acceleration induction area includes Y-direction " H " shape movement piece, 2 Y-direction moving electrodes and 2 with 2 through holes
A Y-direction fixes electrode, and each one end is respectively installed to Y-direction " H " shape movement piece upper and lower end for the 3rd spring and the 4th spring, and the 3rd
Each the other end is respectively installed on the circuit substrate for spring and the 4th spring, and 2 Y-direction moving electrodes are located at Y respectively
Move in the through hole of piece and can move piece with Y-direction " H " shape and move to " H " shape, Y-direction fixes electrode and Y-direction moving electrodes
Set face-to-face and it is in the underface of Y-direction moving electrodes；Y-direction " H " shape movement piece, the 3rd in the Y-axis acceleration induction area
Spring and the 4th spring orientation and X in X-axis acceleration induction area are to moving electrodes, the first spring and second spring arrangement side
To vertical；The Z axis acceleration induction area includes quality stick and the support shaft for being used to support quality stick center, the quality
Z axis induction electrode is equipped with immediately below stick both ends, limited block is equipped with directly over the quality stick both ends；
The circuit substrate lower surface is Nian Jie with signal processing chip upper surface part subregion by the first insulation adhesive layer,
This signal processing chip lower surface is Nian Jie with substrate portion region by the second insulation adhesive layer, circuit substrate and substrate each on
Surface has several chip pads and the substrate pad in several distribution substrate both sides of the edge areas, signal processing core
Piece upper surface has several signals input pad and signal output pad, this signal output pad is located at second
In insulation adhesive layer and signal processing chip both sides of the edge area is distributed in, the first metal wire is connected across the chip pad and letter
Number input pad between, be distributed in both sides the second metal wire be connected across the signal output pad and substrate pad it
Between；
The substrate pad opens up circuit substrate upper surface and is located at lid side, the through hole to be square, the X to
" H " shape movement piece upper and lower end be equipped with the first convex block, first convex block be located at the circuit substrate 2 the first limiting sections it
Between.
Further improved scheme is as follows in above-mentioned technical proposal：
In such scheme, the X-axis acceleration induction area and Y-axis acceleration induction area are located at a row, the Z axis acceleration
Induction zone is arranged in parallel with X-axis acceleration induction area and Y-axis acceleration induction area.
Since above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art：
1. MEMS sensing chips of the present invention, its circuit substrate lower surface passes through the first insulation adhesive layer and signal processing core
Piece upper surface portion region is bonded, this signal processing chip lower surface is glued by the second insulation adhesive layer with substrate portion region
Connect, each upper surface has several chip pads and several distribution substrate both sides of the edge areas for circuit substrate and substrate
Substrate pad, signal processing chip upper surface has several signals input pad and signal output pad,
This signal output pad is interior positioned at the second insulation adhesive layer and is distributed in signal processing chip both sides of the edge area, the first metal wire
It is connected across between chip pad and signal the input pad, the second metal wire for being distributed in both sides is connected across the signal
Export between pad and substrate pad, package reliability is high, and external force is effectively reduced to chip by the welding for the glue-line that insulate
Stress damage, the position arrangement design of pad can carry out the welding of line in minimum encapsulated space, and first makes company
The shorter cost of gold thread of line is lower, secondly uses the technique threaded in insulating cement to solve the routing bank of the high step difference opposite sex not
The problem of steady, improve the feasibility of product volume production.
2. MEMS sensing chips of the present invention, its X moves piece upper and lower end to " H " shape and is equipped with the first convex block, this is first convex
Block is located between 2 the first limiting sections of the circuit substrate, and Y-direction " H " shape movement piece upper and lower end is equipped with the second convex block, should
Second convex block is located between 2 the second limiting sections of the circuit substrate, effectively prevents product from being kept away under the action of acceleration
Exempt from X-axis, the damage of Y-axis acceleration induction area internal structure.
3. MEMS sensing chips of the present invention, its Z axis acceleration induction area includes quality stick and is used to support quality stick
The support shaft at center, the quality stick both ends underface are equipped with Z axis induction electrode, and the quality stick both ends surface is
Equipped with limited block, can effectively protect the mechanicalness of internal structure to damage, simultaneously for sensing sensitivity in terms of have it is very big
Improve.
4. MEMS sensing chips of the present invention, its X-axis acceleration induction area and Y-axis acceleration induction area are located at a row, described
Z axis acceleration induction area is arranged in parallel with X-axis acceleration induction area and Y-axis acceleration induction area, and the effective induction zone that reduces exists
Shared position in chip circuit, in terms of cost and the feasibility of encapsulation advantageously；Secondly, substrate pad opens up circuit
Substrate upper surface and it is located at lid side, is conducive to chip array and reduces the difficulty of cutting and routing in encapsulation process.
Brief description of the drawings
Fig. 1 is MEMS sensing chips structure diagram of the present invention；
Fig. 2 is the left view structural representation of attached drawing 1；
Fig. 3 is the present invention looks up structural representation of attached drawing 1；
Fig. 4 is MEMS sensing chips structure diagram of the present invention；
Fig. 5 is micro mechanical system structure diagram of the present invention；
Fig. 6 is X-axis acceleration induction plot structure schematic diagram in MEMS sensing chips of the present invention；
Fig. 7 is X-axis acceleration induction area partial structural diagram of the present invention；
Fig. 8 is Y-axis acceleration induction plot structure schematic diagram in MEMS sensing chips of the present invention；
Fig. 9 is Z axis acceleration induction plot structure schematic diagram in MEMS sensing chips of the present invention；
Figure 10 is the present invention looks up structural representation of attached drawing 9.
In the figures above：1st, MEMS acceleration chip；2nd, signal processing chip；3rd, substrate；4th, lid；5th, micromechanics system
System；6th, circuit substrate；7th, X-axis acceleration induction area；71st, X moves piece to " H " shape；72nd, X is to moving electrodes；73rd, X is electric to fixing
Pole；74th, the first spring；75th, second spring；8th, Y-axis acceleration induction area；81st, Y-direction " H " shape movement piece；82nd, Y-direction movement electricity
Pole；83rd, Y-direction fixes electrode；84th, the 3rd spring；85th, the 4th spring；9th, Z axis acceleration induction area；10th, sealant layer；11st, it is close
Seal chamber；12nd, the first insulation adhesive layer；13rd, the second insulation adhesive layer；14th, chip pad；15th, substrate pad；16th, signal
Input pad；17th, signal output pad；18th, the first metal wire；19th, the second metal wire；20th, the first convex block；21st, first
Limiting section；22nd, the second convex block；23rd, the second limiting section；24th, quality stick；25th, support shaft；26th, Z axis induction electrode；27th, it is spacing
Block.
Embodiment
With reference to embodiment, the invention will be further described：
Embodiment：A kind of MEMS sensing chips, including MEMS acceleration chip 1, for filtering interference signal and handling sense
The signal processing chip 2 and substrate 3 of induction signal, the MEMS acceleration chip 1 is by lid 4, micro mechanical system 5 and for producing
The circuit substrate 6 of inductive signal, the micro mechanical system 5 is by X-axis acceleration induction area 7, Y-axis acceleration induction area 8 and for feeling
The Z axis acceleration induction area 9 of extraneous Z axis movement is answered to form, the lid 4 passes through sealant layer with 6 edge of circuit substrate
So as to form an annular seal space 11, the micro mechanical system 5 be located in annular seal space 11 and in 6 upper surface of circuit substrate 10 bondings, this
The height of annular seal space 11 is 45 ~ 55 μm；
The X-axis acceleration induction area 7 includes the X with 2 through holes and moves 71,2 X of piece to moving electrodes to " H " shape
To fixed electrode 73, the first spring 74 and 75 respective one end of second spring are respectively installed to X and move piece 71 to " H " shape 72 and 2 X
Left and right end, the first spring 74 and the 75 respective other end of second spring be respectively installed on the circuit substrate 6,2 X
Moved respectively positioned at X to " H " shape to moving electrodes 72 in 2 through holes of piece 71 and piece 71 1 can be moved to " H " shape with the X and started shipment
It is dynamic, the X set face-to-face to fixed electrode 73 and X to moving electrodes 72 and its in X to the underface of moving electrodes 72；
The Y-axis acceleration induction area 8 includes Y-direction " H " shape movement 81,2 Y-direction moving electrodes of piece with 2 through holes
82 and 2 Y-directions fix electrode 83, and the 3rd spring 84 and 85 respective one end of the 4th spring are respectively installed to Y-direction " H " shape movement piece 81
Upper and lower end, the 3rd spring 84 and the 85 respective other end of the 4th spring are respectively installed on the circuit substrate 6,2 Y-directions
Moving electrodes 82 can move in the through hole of Y-direction " H " shape movement piece 81 and with Y-direction " H " shape movement piece 81, Y respectively
Set face-to-face with Y-direction moving electrodes 82 to fixed electrode 83 and it is in the underface of Y-direction moving electrodes 82；The Y-axis accelerates
Spend Y-direction " H " shape movement piece 81, the 3rd spring 84 and 85 orientation of the 4th spring and X-axis acceleration induction area 7 in induction zone 8
Middle X is vertical with 75 orientation of second spring to moving electrodes 72, the first spring 74；The Z axis acceleration induction area 9 includes matter
Amount stick 24 and the support shaft 25 for being used to support 24 center of quality stick, 24 both ends of the quality stick underface are equipped with Z axis
Induction electrode 26,24 both ends of the quality stick surface are equipped with limited block 27；
6 lower surface of circuit substrate passes through the first insulation adhesive layer 12 and 2 upper surface part subregion of signal processing chip
Bonding, this 2 lower surface of signal processing chip is Nian Jie with 3 subregion of substrate by the second insulation adhesive layer 13,6 He of circuit substrate
3 respective upper surface of substrate has several chip pads 14 and the substrate weldering in several 3 both sides of the edge areas of distribution substrate
Contact 15,2 upper surface of signal processing chip have several signals input pad 16 and signal output pad 17, this
Signal output pad 17 is interior positioned at the second insulation adhesive layer 13 and is distributed in 2 both sides of the edge area of signal processing chip, the first gold medal
Belong to line 18 to be connected across between the chip pad 14 and signal input pad 16, be distributed in the second metal wire 19 of both sides across
It is connected between the signal output pad 17 and substrate pad 15.
Above-mentioned X moves 71 upper and lower end of piece to " H " shape and is equipped with the first convex block 20, which is located at the circuit
Between 2 the first limiting sections 21 of substrate 6.
Above-mentioned Y-direction " H " shape movement 81 upper and lower end of piece is equipped with the second convex block 22, which is located at the circuit
Between 2 the second limiting sections 23 of substrate 6.
The height of above-mentioned annular seal space 11 is 50 μm.
Above-mentioned X-axis acceleration induction area 7 and Y-axis acceleration induction area 8 are located at a row, the Z axis acceleration induction area 9 with
X-axis acceleration induction area 7 and Y-axis acceleration induction area 8 are arranged in parallel.
Aforesaid substrate pad 15 opens up 6 upper surface of circuit substrate and is located at 4 side of lid；Above-mentioned through hole is square.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar can understand present disclosure and implement according to this, and it is not intended to limit the scope of the present invention.It is all according to the present invention
The equivalent change or modification that Spirit Essence is made, should be covered by the protection scope of the present invention.
Claims (2)
- A kind of 1. MEMS sensing chips, it is characterised in that：Including MEMS acceleration chips（1）, for filtering interference signal and locating Manage the signal processing chip of inductive signal（2）And substrate（3）, the MEMS acceleration chip（1）By lid（4）, micromechanics system System（5）With the circuit substrate for producing inductive signal（6）Composition, the micro mechanical system（5）By X-axis acceleration induction area（7）、 Y-axis acceleration induction area（8）With the Z axis acceleration induction area for sensing extraneous Z axis movement（9）Composition, the lid（4）With Circuit substrate（6）Edge passes through sealant layer（10）Bonding is so as to form an annular seal space（11）, the micro mechanical system（5） Positioned at annular seal space（11）It is interior and in circuit substrate（6）Upper surface, the annular seal space（11）Height be 45 ~ 55 μm；The X-axis acceleration induction area（7）Including the X with 2 through holes piece is moved to " H " shape（71）, 2 X are to moving electrodes （72）With 2 X to fixed electrode（73）, the first spring（74）And second spring（75）Respective one end is respectively installed to X to " H " shape Move piece（71）Left and right end, the first spring（74）And second spring（75）The respective other end is respectively installed to the circuit base Piece（6）On, 2 X are to moving electrodes（72）Respectively piece is moved to " H " shape positioned at X（71）2 through holes in and can be with the X Piece is moved to " H " shape（71）Move together, the X is to fixed electrode（73）With X to moving electrodes（72）Face-to-face set and its In X to moving electrodes（72）Underface；The Y-axis acceleration induction area（8）Piece is moved including Y-direction " H " shape with 2 through holes（81）, 2 Y-direction moving electrodes （82）Electrode is fixed with 2 Y-directions（83）, the 3rd spring（84）With the 4th spring（85）Respective one end is respectively installed to Y-direction " H " shape Move piece（81）Upper and lower end, the 3rd spring（84）With the 4th spring（85）The respective other end is respectively installed to the circuit substrate （6）On, 2 Y-direction moving electrodes（82）Respectively positioned at Y-direction " H " shape movement piece（81）Through hole in and can be with the Y-direction " H " Shape moves piece（81）Move together, Y-direction fixes electrode（83）With Y-direction moving electrodes（82）Set face-to-face and it is moved in Y-direction Electrode（82）Underface；The Y-axis acceleration induction area（8）Middle Y-direction " H " shape moves piece（81）, the 3rd spring（84）With Four springs（85）Orientation and X-axis acceleration induction area（7）Middle X is to moving electrodes（72）, the first spring（74）With the second bullet Spring（75）Orientation is vertical；The Z axis acceleration induction area（9）Including quality stick（24）Be used to support quality stick （24）The support shaft at center（25）, the quality stick（24）Z axis induction electrode is equipped with immediately below both ends（26）, the quality Stick（24）Limited block is equipped with directly over both ends（27）；The circuit substrate（6）Lower surface passes through the first insulation adhesive layer（12）With signal processing chip（2）Upper surface part subregion Domain is bonded, this signal processing chip（2）Lower surface passes through the second insulation adhesive layer（13）With substrate（3）Subregion is bonded, electricity Roadbed piece（6）And substrate（3）Respective upper surface has several chip pads（14）Substrate is distributed in several（3） The substrate pad in both sides of the edge area（15）, signal processing chip（2）Upper surface has several signals input pad （16）With signal output pad（17）, this signal output pad（17）Positioned at the second insulation adhesive layer（13）It is interior and be distributed in Signal processing chip（2）Both sides of the edge area, the first metal wire（18）It is connected across the chip pad（14）Input and weld with signal Contact（16）Between, it is distributed in the second metal wire of both sides（19）It is connected across the signal output pad（17）Welded with substrate Point（15）Between；The substrate pad（15）It is opened in circuit substrate（6）Upper surface and it is located at lid（4）Side, the through hole are side Shape, the X move piece to " H " shape（71）Upper and lower end is equipped with the first convex block（20）, first convex block（20）Positioned at the circuit Substrate（6）2 the first limiting sections（21）Between.
- 2. MEMS sensing chips according to claim 1, it is characterised in that：The X-axis acceleration induction area（7）And Y-axis Acceleration induction area（8）Positioned at a row, the Z axis acceleration induction area（9）With X-axis acceleration induction area（7）With Y-axis acceleration Induction zone（8）It is arranged in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510249774.2A CN104880573B (en) | 2013-07-30 | 2013-07-30 | MEMS sensing chips |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310324911.5A CN103412146B (en) | 2013-07-30 | 2013-07-30 | Capacitive MEMS acceleration sensor |
| CN201510249774.2A CN104880573B (en) | 2013-07-30 | 2013-07-30 | MEMS sensing chips |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310324911.5A Division CN103412146B (en) | 2013-07-30 | 2013-07-30 | Capacitive MEMS acceleration sensor |
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| CN104880573A CN104880573A (en) | 2015-09-02 |
| CN104880573B true CN104880573B (en) | 2018-04-27 |
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| CN201310324911.5A Active CN103412146B (en) | 2013-07-30 | 2013-07-30 | Capacitive MEMS acceleration sensor |
| CN201510249775.7A Active CN104880572B (en) | 2013-07-30 | 2013-07-30 | MEMS high-range acceleration transducer part |
| CN201510249774.2A Active CN104880573B (en) | 2013-07-30 | 2013-07-30 | MEMS sensing chips |
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| CN201310324911.5A Active CN103412146B (en) | 2013-07-30 | 2013-07-30 | Capacitive MEMS acceleration sensor |
| CN201510249775.7A Active CN104880572B (en) | 2013-07-30 | 2013-07-30 | MEMS high-range acceleration transducer part |
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| WO (1) | WO2015014179A1 (en) |
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| CN103412146B (en) * | 2013-07-30 | 2015-05-20 | 苏州固锝电子股份有限公司 | Capacitive MEMS acceleration sensor |
| CN105371845A (en) * | 2015-12-17 | 2016-03-02 | 安徽寰智信息科技股份有限公司 | Inertia tracking module |
| IT201900009651A1 (en) * | 2019-06-20 | 2020-12-20 | St Microelectronics Srl | MEMS INERTIAL SENSOR WITH HIGH RESISTANCE TO THE PHENOMENON OF ADHESION |
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| TW200813431A (en) * | 2006-08-09 | 2008-03-16 | Hitachi Metals Ltd | Multi-range three-axis acceleration sensor device |
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2013
- 2013-07-30 CN CN201310324911.5A patent/CN103412146B/en active Active
- 2013-07-30 CN CN201510249775.7A patent/CN104880572B/en active Active
- 2013-07-30 CN CN201510249774.2A patent/CN104880573B/en active Active
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2014
- 2014-06-24 WO PCT/CN2014/080645 patent/WO2015014179A1/en active Application Filing
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| CN101270989A (en) * | 2008-03-14 | 2008-09-24 | 江苏英特神斯科技有限公司 | Integrated 5-axis movement sensor based on MEMS technology |
| CN102401842A (en) * | 2011-07-08 | 2012-04-04 | 上海亚尚电子科技有限公司 | Non-equal height comb teeth capacitive triaxial acceleration transducer and method for manufacturing same |
| CN102955046A (en) * | 2012-10-23 | 2013-03-06 | 合肥工业大学 | Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104880572A (en) | 2015-09-02 |
| CN104880572B (en) | 2018-12-14 |
| CN103412146A (en) | 2013-11-27 |
| WO2015014179A1 (en) | 2015-02-05 |
| CN103412146B (en) | 2015-05-20 |
| CN104880573A (en) | 2015-09-02 |
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