CN203324300U - Double-cantilever-beam-type micro mechanical acceleration sensor - Google Patents
Double-cantilever-beam-type micro mechanical acceleration sensor Download PDFInfo
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- CN203324300U CN203324300U CN2013203861592U CN201320386159U CN203324300U CN 203324300 U CN203324300 U CN 203324300U CN 2013203861592 U CN2013203861592 U CN 2013203861592U CN 201320386159 U CN201320386159 U CN 201320386159U CN 203324300 U CN203324300 U CN 203324300U
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Abstract
The utility model provides a double-cantilever-beam-type micro mechanical acceleration sensor. The sensor is characterized in that the sensor comprises a sensitive chip and a lower glass plate; the sensitive chip contains a framework, cantilever beams, a mass block and four piezoresistors; the two mutually independent cantilever beams are arranged in the framework; one end of each cantilever beam is connected with the framework and the other end is connected with the mass block; the cantilever beams and the mass block form a movable part of the sensitive chip; the piezoresistors are arranged on upper surfaces of the cantilever beams; the sensitive chip is connected with the lower glass plate through bonding. For an occasion which needs a high resonant frequency of the sensor, by using the sensor of the utility model, a sensitivity is about doubled and an uncoordinated contradiction in a conventional design is avoided.
Description
Technical field
The utility model belongs to the micro-acceleration sensor technical field, is specifically related to a kind of double cantilever beam mechanical acceleration sensor that declines.
Background technology
The basic functional principle of micromechanics piezoresistance type acceleration sensor is to take semi-conductive piezoresistive effect as basis, and beam island structure commonly used, support mass by semi-girder or tie-beam, adopts Implantation or diffusion technique to make voltage dependent resistor (VDR) on beam.When sensor is experienced the masterpiece used time, mass produces skew, drives semi-girder or tie-beam is distorted or crookedly wait deformation, thereby the generation STRESS VARIATION causes that the voltage dependent resistor (VDR) resistance changes in resistance.Utilize suitable peripheral circuit that but this variation is converted to measuring-signal as formal outputs such as voltage, electric currents.Just can set up output signal and by the relation between measuring acceleration through demarcating, thereby to measure extraneous acceleration.For general cantilever beam structure, transversal effect is relatively large, and natural frequency and sensitivity are difficult to take into account.Add for pressure resistance type the meter that hastens, frequency and sensitivity are two most important parameter indexs.The problem that the cantilever beam type micro-acceleration gauge all exists frequency and sensitivity mutually to restrict, sensitivity is low for the frequency height, and frequency is low highly sensitive.
Summary of the invention
The technical problems to be solved in the utility model is to provide a kind of double cantilever beam mechanical acceleration sensor that declines.
The utility model is achieved through the following technical solutions:
The double cantilever beam of the present utility model mechanical acceleration sensor that declines, be characterized in, described sensor comprises sensitive chip and lower glass plate, wherein, sensitive chip contains framework, the first semi-girder, the second semi-girder, the 3rd semi-girder, mass and four voltage dependent resistor (VDR)s, and mass comprises the first mass, the second mass; Its annexation is to be provided with two separate semi-girders in described framework, i.e. the first semi-girder, the second semi-girder.One end of the first semi-girder is connected with framework, and the other end is connected with the first mass.One end of the second semi-girder is connected with framework, and the other end is connected with the second mass, and described the first semi-girder, the second semi-girder, the 3rd semi-girder and mass form the moving part of sensitive chip jointly; Voltage dependent resistor (VDR) is arranged on the semi-girder upper surface, and described sensitive chip is connected by bonding with lower glass plate.
The first semi-girder in described sensitive chip is identical with the second cantilever beam structure, and the first mass is identical with the second mass block structure.
Distance between moving part in described sensitive chip and lower glass plate is 2 μ m～200 μ m.
Described sensitive chip adopts duplicate separate semi-girder and the mass of single-ended solid, and closed framework is arranged on every side: sensitive chip takes a unit.
The width of described semi-girder may diminish to 20 μ m.
The voltage dependent resistor (VDR) width of described single straight line strip may diminish to 4 μ m, and the length of each resistance can reach the total length of semi-girder.
The double cantilever beam of the present utility model mechanical acceleration sensor that declines has than the sensitivity more of cantilever beam type micro-acceleration gauge height under identical natural frequency; Otherwise, in the same sensitivity situation, there is higher natural frequency.Also there are the little and simple characteristics of technique of transversal effect simultaneously.
The double cantilever beam of the present utility model mechanical acceleration sensor that declines, its advantage is:
1. adopt the double cantilever beam of single-ended solid, owing to adopting double cantilever beam, structural symmetry, in the situation that guarantee that semi-girder thickness is enough, transversal effect is very little.Most importantly in the situation that guarantee enough sensitivity, it is very little that each unit can be done, and sensitive beam has larger stiffness coefficient like this, thereby this sensor can have high natural frequency.
2. symmetry simple in structure, guaranteed that the consistency of thickness of semi-girder in DRIE technique is good.The width of sensitive beam may diminish to 20 μ m left and right, has guaranteed the miniaturization demand of this structure, and when having high natural frequency, sensitivity is also higher.
3. the sensitive chip moving part has frame protection, easily carries out wafer level packaging, so technique is simple, reproducible, yield rate is high.
4. different by many rectangular linear sheet resistances series connection from the sensitive resistance of conventional piezoresistance type acceleration sensor be, the voltage dependent resistor (VDR) the utility model proposes is designed to single straight line strip, width can be as small as 4 μ m, every all is placed in the sensitive beam boundary vicinity, and the length of voltage dependent resistor (VDR) can approach beam length.
5. the double cantilever beam of the present utility model mechanical acceleration sensor that declines is to be bonded together and to be formed by sensitive chip and lower glass plate, and this packaging technology is simple, easy to operate.
6. suitable distance is arranged between sensitive chip and lower glass plate, make sensitive chip that enough movement clearance be arranged on the one hand, can adjust ratio of damping on the other hand when condition is suitable, guaranteed that like this this device has wider frequency band.
The accompanying drawing explanation
Figure l is the decline structural representation of mechanical acceleration sensor of double cantilever beam of the present utility model;
In figure: 1. framework 21. first semi-girder 22. second semi-girder 31. first mass 32. second mass 41. first voltage dependent resistor (VDR) 42. second voltage dependent resistor (VDR) 43. the 3rd voltage dependent resistor (VDR) 44. the 4th voltage dependent resistor (VDR) 5. lower glass plate.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
Fig. 1 is the double cantilever beam of the present utility model mechanical acceleration sensor construction schematic diagram that declines.In Fig. 1, a kind of double cantilever beam of the present utility model mechanical acceleration sensor that declines, comprise sensitive chip and lower glass plate 5, wherein, sensitive chip contains framework 1, the first semi-girder 21, the second semi-girder 22, the first mass 31, the second mass 32, the first voltage dependent resistor (VDR) 41, the second voltage dependent resistor (VDR) 42, the 3rd voltage dependent resistor (VDR) 43, the 4th voltage dependent resistor (VDR) 44, its annexation is, be provided with two the first separate semi-girders 21 and the second semi-girder 22 in described framework 1, one end of the first semi-girder 21 is connected with framework 1, the other end is connected with the first mass 31, one end of the second semi-girder 22 is connected with framework 1, the other end is connected with the second mass 32, the first semi-girder 21, the second semi-girder 22, the first mass 31, the common moving part that forms sensitive chip of the second mass 32, the first voltage dependent resistor (VDR) 41, the second voltage dependent resistor (VDR) 42 are arranged on the first semi-girder 21 upper surfaces, the 3rd voltage dependent resistor (VDR) 43, the 4th voltage dependent resistor (VDR) 44 are arranged on the second semi-girder 22 upper surfaces, and described sensitive chip is connected by bonding with lower glass plate 5.
The first semi-girder 21 in described sensitive chip is identical with the structure of the second semi-girder 22, and the first mass 31 is identical with the structure of the second mass 32.
Described two separate semi-girders of single-ended solid and mass are for placing in the same way semi-girder on one side same, as shown in Figure 1.
Distance between moving part in described sensitive chip and lower glass plate 5 is 2 μ m.
In the present embodiment, sensitive chip semi-girder thickness 150 μ m, length is 150 μ m, width 60 μ m.Mass thickness 150 μ m, length 210 μ m, width 180 μ m.Natural frequency is 250kHz, and sensitivity is 0.2 μ V/g/V approximately.The moving part of sensitive chip and the gap of glass plate are 150 μ m.。
Embodiment 2
The present embodiment is identical with the structure of embodiment 1, and difference is, described sensitive chip semi-girder thickness 100 μ m, length 130 μ m, width 40 μ m, mass thickness 100 μ m, length 120 μ m, width 120 μ m.Natural frequency is 250kHz, and sensitivity is 0.1 μ V/g/V approximately.The moving part of sensitive chip and the gap of glass plate are 200 μ m.
Described two separate semi-girder, masses of single-ended solid are to place in the other direction, and semi-girder is arranged on opposite side.
The utility model absolutely not only is confined to embodiment.
Claims (3)
1. the double cantilever beam mechanical acceleration sensor that declines, it is characterized in that: described sensor comprises sensitive chip and lower glass plate (5), wherein, sensitive chip contains framework (1), the first semi-girder (21), the second semi-girder (22), the first mass (31), the second mass (32), the first voltage dependent resistor (VDR) (41), the second voltage dependent resistor (VDR) (42), the 3rd voltage dependent resistor (VDR) (43), the 4th voltage dependent resistor (VDR) (44), its annexation is, be provided with two separate the first semi-girders (21) and the second semi-girder (22) in described framework (1), one end of the first semi-girder (21) is connected with framework (1), the other end is connected with the first mass (31), one end of the second semi-girder (22) is connected with framework (1), the other end is connected with the second mass (32), the first semi-girder (21), the second semi-girder (22), the first mass (31), the second mass (32) form the moving part of sensitive chip jointly, the first voltage dependent resistor (VDR) (41), the second voltage dependent resistor (VDR) (42) are arranged on the first semi-girder (21) upper surface, the 3rd voltage dependent resistor (VDR) (43), the 4th voltage dependent resistor (VDR) (44) are arranged on the second semi-girder (22) upper surface, and described sensitive chip is connected by bonding with lower glass plate (5).
2. according to the described double cantilever beam of the claim l mechanical acceleration sensor that declines, it is characterized in that: the first semi-girder (21) in described sensitive chip is identical with the second semi-girder (22) structure, and the first mass (31) is identical with the second mass (32) structure.
3. according to the described double cantilever beam of the claim 1 mechanical acceleration sensor that declines, it is characterized in that: the distance between the moving part in described sensitive chip and lower glass plate (5) is 2 μ m～200 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203861592U CN203324300U (en) | 2013-07-02 | 2013-07-02 | Double-cantilever-beam-type micro mechanical acceleration sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203861592U CN203324300U (en) | 2013-07-02 | 2013-07-02 | Double-cantilever-beam-type micro mechanical acceleration sensor |
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| CN203324300U true CN203324300U (en) | 2013-12-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013203861592U Expired - Lifetime CN203324300U (en) | 2013-07-02 | 2013-07-02 | Double-cantilever-beam-type micro mechanical acceleration sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103293336A (en) * | 2013-07-02 | 2013-09-11 | 中国工程物理研究院电子工程研究所 | Double-cantilever beam type micro-mechanical acceleration sensor |
| CN113933540A (en) * | 2021-11-19 | 2022-01-14 | 中国工程物理研究院电子工程研究所 | Electromechanical coupling capacitance type acceleration sensor |
-
2013
- 2013-07-02 CN CN2013203861592U patent/CN203324300U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103293336A (en) * | 2013-07-02 | 2013-09-11 | 中国工程物理研究院电子工程研究所 | Double-cantilever beam type micro-mechanical acceleration sensor |
| CN113933540A (en) * | 2021-11-19 | 2022-01-14 | 中国工程物理研究院电子工程研究所 | Electromechanical coupling capacitance type acceleration sensor |
| CN113933540B (en) * | 2021-11-19 | 2023-08-04 | 中国工程物理研究院电子工程研究所 | Electromechanical coupling capacitive acceleration sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131204 |
|
| CU01 | Correction of utility model | ||
| CU01 | Correction of utility model |
Correction item: Termination upon expiration of patent Correct: Revocation of Patent Expiration and Termination False: Expiration and Termination of 39 Volume 2901 Patent on July 18, 2023 Number: 29-01 Volume: 39 |