CN206574725U - A kind of four sides silicon solar cell - Google Patents
A kind of four sides silicon solar cell Download PDFInfo
- Publication number
- CN206574725U CN206574725U CN201720092680.3U CN201720092680U CN206574725U CN 206574725 U CN206574725 U CN 206574725U CN 201720092680 U CN201720092680 U CN 201720092680U CN 206574725 U CN206574725 U CN 206574725U
- Authority
- CN
- China
- Prior art keywords
- silicon
- matrix
- solar cell
- hollow
- surface electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of four sides silicon solar cell, including matrix, the matrix is hollow four-side silicon, and it is made up of silicon, and shape is in the cuboid of upper and lower opening, and outer surface is respectively extinction face；The outer surface of matrix is respectively arranged with positive silver electrode, and the inner surface of matrix is respectively arranged with back of the body silver electrode and Al-BSF.The utility model compared with prior art, has the following advantages that and beneficial effect：This solar cell sets four or more extinction face, it is absorbed sunray from four or multiple faces, the absorption energy of sunshine is effectively increased, so as to improve the photoelectric transformation efficiency of battery.
Description
Technical field
The utility model is related to crystal silicon solar batteries technical field, more particularly to a kind of four sides silicon solar cell.
Background technology
Solar cell is that one kind effectively absorbs solar radiant energy, and electric energy is converted optical energy into using photovoltaic effect
Device, when solar irradiation is in semiconductor P-N junction (P-N Junction), form new hole-electron to (V-E pair),
In the presence of P-N junction electric field, hole flows to P areas by N areas, and electronics flows to N areas by P areas, connects and electric current is just formed after circuit.By
Then solar energy is converted into the solid semiconductor device of electric energy using the photovoltaic effect of various potential barriers, therefore the also known as sun
Energy battery or photovoltaic cell, are the significant components of solar array power-supply system.Solar cell mainly has crystal silicon (Si) electricity
Pond, III-V semi-conductor cell (GaAs, Cds/Cu2S, Cds/CdTe, Cds/InP, CdTe/Cu2Te), without machine battery, organic
Battery etc., wherein crystal silicon solar batteries occupy market mainstream leading position.The stock of crystal silicon solar batteries reaches for purity
99.9999%th, resistivity more than 10 Ω-cm p type single crystal silicon, including front matte, front p-n junction, front surface antireflection film,
The parts such as positive backplate.Added printing opacity cover plate (such as high glass and EVA thoroughly) protection by plane of illumination for front in component package, prevented
Radiation injury of the battery by high energy electron and proton in the Van Allen belt of outer space.And conventional crystal silicon solar batteries are mainly list
Face or two sides absorb sunshine, and the solar energy of absorption is limited, cause the generated energy of conversion not high, therefore, it is necessary to do into
One step is improved.
Utility model content
The purpose of this utility model is to overcome the shortcomings of that above-mentioned prior art is present, and provides one kind and effectively improve battery
Photoelectric transformation efficiency, and the high four sides silicon solar cell of generated energy of conversion.
To achieve the above object, technical scheme provided by the utility model, as follows：
A kind of four sides silicon solar cell, it is characterised in that：Including matrix, the matrix is hollow four-side silicon (in addition, matrix
Can also set more than four sides), it is made up of silicon, and shape is in the cuboid of upper and lower opening, and outer surface is respectively extinction face；Matrix
Outer surface be respectively arranged with positive silver electrode, the inner surface of matrix is respectively arranged with back of the body silver electrode and Al-BSF.
The outer surface of described matrix is provided with some crisscross outer surface electrode main grid lines and the secondary grid of outer surface electrode
Line；The inner surface setting of described matrix has some crisscross inner surface electrode main gate lines and the secondary grid line of inner surface electrode；Outside
Surface electrode main gate line is mutually corresponding with inner surface electrode main gate line, outer surface electrode pair grid line and the secondary grid line phase of inner surface electrode
It is mutually corresponding.
Preparation method for preparing above-mentioned four sides silicon solar cell, comprises the following steps：
Step one：Slot type wet-method etching is used to hollow four-side silicon；
Step 2：Hollow four-side silicon is put into tubular diffusion furnace and carries out phosphorus diffusion；
Step 3：Hollow four-side silicon is put into PECVD pipes to four outer surface silicon nitride film depositions；
Step 4：Back silver paste print is carried out to the inner surface of hollow four-side silicon using screen printing technique
Brush and the printing of back field aluminum paste material, so that back of the body silver electrode and Al-BSF is made；Using silk-screen printing skill
Art carries out positive silver paste printing to the outer surface of hollow four-side silicon, so that positive silver electrode is made；
Step 5：Hollow four-side silicon is sintered；
Step 6：Front edge to hollow four-side silicon carries out laser isolation.
Length, width and the height of the hollow four-side silicon are respectively 2-10cm, and thickness is 1-5mm.
The hollow four-side silicon is monocrystalline four sides silicon or polycrystalline four sides silicon；When hollow four-side silicon is monocrystalline four sides silicon, by it
Insert in slot type KOH solution or NAOH solution and etch, KOH or NAOH mass percent concentration are respectively 20%-50%；It is hollow
When four sides silicon is polycrystalline four sides silicon, it is put into slot type acid solution and etches, acid solution is HNO3 and HF mixed acid, HNO3's
Mass percent concentration is 45%-60%, and HF mass percent concentration is 40%-55%.
Phosphorus source used in step 2 is POCl3, and concentration is 200-1000sccm, and oxygen flow is 100-
500sccm, nitrogen flow is 5-10slm.
The silane flow rate that step 3 PECVD plated films are used is 100-1000sccm, and ammonia flow is 1-5slm.
The quantity of step 4 back of the body silver electrode is 1-3 roots, and the quantity of positive silver electrode is 1-3 roots, back of the body silver electrode and positive silver electrode
Quantity it is equal；Al-BSF is away from side 0.5-1mm.
Sintering temperature in step 5 is 750-900 degree, and belt speed is 5000-8000mm/min.
Optical maser wavelength in step 6 is 1064nm, and laser power is 5-50w.
The utility model compared with prior art, has the following advantages that and beneficial effect：This solar cell sets four
Or the extinction face of more than four, it is absorbed sunray from four or multiple faces, effectively increase the absorption of sunshine
Energy, so as to improve the photoelectric transformation efficiency of battery.
Brief description of the drawings
Fig. 1 is the dimensional structure diagram of solar cell in the embodiment of the utility model one.
Fig. 2 is the top view of solar cell in the embodiment of the utility model one.
Fig. 3 is the preparation technology flow chart of solar cell in the embodiment of the utility model one.
Embodiment
With reference to specific embodiment, the utility model is described in further detail.
Referring to Fig. 1 and Fig. 2, this four sides silicon solar cell, including matrix 1, the matrix 1 are hollow four-side silicon, and it is by silicon
It is made, shape is in the square of upper and lower opening, and outer surface is respectively extinction face；The outer surface of matrix 1 is respectively arranged with positive silver electricity
Pole, the inner surface of matrix 1 is respectively arranged with back of the body silver electrode and Al-BSF.This too can battery there are four extinction faces, can inhale
The sunshine of four direction is received, the absorption energy of sunshine is effectively increased, so as to improve the photoelectric transformation efficiency of battery.Except this
In addition, matrix 1 can also set the extinction face of more than four, further to improve absorptance.
Further, the outer surface of described matrix 1 is provided with some crisscross outer surface electrode main grid lines 2 and appearance
The secondary grid line 3 of face electrode；The inner surface setting of described matrix 1 has some crisscross inner surface electrode main gate lines 4 and inner surface
Electrode pair grid line；Outer surface electrode main grid line 2 and inner surface electrode main gate line 4 are mutually corresponding, the secondary grid line 3 of outer surface electrode with it is interior
Surface electrode pair grid line is mutually corresponded to.
Referring to Fig. 3, the preparation method for preparing above-mentioned four sides silicon solar cell comprises the following steps：
Step one：Slot type wet-method etching is used to hollow four-side silicon；
Step 2：Hollow four-side silicon is put into tubular diffusion furnace and carries out phosphorus diffusion；
Step 3：Hollow four-side silicon is put into PECVD pipes to four outer surface silicon nitride film depositions；
Step 4：Back silver paste printing and back field aluminum paste are carried out to the inner surface of hollow four-side silicon using screen printing technique
Material printing, so that back of the body silver electrode and Al-BSF is made；Positive silver paste is carried out to the outer surface of hollow four-side silicon using screen printing technique
Material printing, so that positive silver electrode is made；
Step 5：Hollow four-side silicon is sintered；
Step 6：Front edge to hollow four-side silicon carries out laser isolation.
Further, the length of the hollow four-side silicon, width and height are respectively 2-10cm, and thickness is 1-5mm.
Further, the hollow four-side silicon is monocrystalline four sides silicon or polycrystalline four sides silicon；Hollow four-side silicon is monocrystalline four sides
During silicon, it is put into slot type KOH solution or NAOH solution and etches, KOH or NAOH mass percent concentration are respectively 20%-
50%；When hollow four-side silicon is polycrystalline four sides silicon, it is put into slot type acid solution and etches, acid solution is HNO3 and HF mixing
Acid, HNO3 mass percent concentration is 45%-60%, and HF mass percent concentration is 40%-55%.
Further, phosphorus source used in step 2 is POCl3, and concentration is 200-1000sccm, and oxygen flow is
100-500sccm, nitrogen flow is 5-10slm.
Further, the silane flow rate that step 3 PECVD plated films are used is 100-1000sccm, and ammonia flow is 1-
5slm。
Further, the quantity of step 4 back of the body silver electrode is 1-3 roots, and the quantity of positive silver electrode is 1-3 roots, back of the body silver electrode and
The quantity of positive silver electrode is equal；Al-BSF is away from side 0.5-1mm.
Further, the sintering temperature in step 5 is 750-900 degree, and belt speed is 5000-8000mm/min.
Further, the optical maser wavelength in step 6 is 1064nm, and laser power is 5-50w.
Examples of implementation described above are only the preferred embodiment of the utility model, not limit of the present utility model with this
Practical range, therefore the change that all shape, principles according to the utility model are made, all should cover in protection domain of the present utility model
It is interior.
Claims (2)
1. a kind of four sides silicon solar cell, it is characterised in that：Including matrix (1), the matrix (1) is hollow four-side silicon, its by
Silicon is made, and shape is in the cuboid of upper and lower opening, and outer surface is respectively extinction face；The outer surface of matrix (1) is respectively arranged with just
Silver electrode, the inner surface of matrix (1) is respectively arranged with back of the body silver electrode and Al-BSF.
2. four sides silicon solar cell according to claim 1, it is characterised in that：The outer surface of described matrix (1) is set
There are some crisscross outer surface electrode main grid lines (2) and the secondary grid line (3) of outer surface electrode；The inner surface of described matrix (1)
It is provided with some crisscross inner surface electrode main gate lines (4) and the secondary grid line of inner surface electrode；Outer surface electrode main grid line (2)
Mutually corresponding with inner surface electrode main gate line (4), outer surface electrode pair grid line (3) and the secondary grid line of inner surface electrode are mutually corresponding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720092680.3U CN206574725U (en) | 2017-01-20 | 2017-01-20 | A kind of four sides silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720092680.3U CN206574725U (en) | 2017-01-20 | 2017-01-20 | A kind of four sides silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206574725U true CN206574725U (en) | 2017-10-20 |
Family
ID=60060489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720092680.3U Withdrawn - After Issue CN206574725U (en) | 2017-01-20 | 2017-01-20 | A kind of four sides silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206574725U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847959A (en) * | 2017-01-20 | 2017-06-13 | 广东爱康太阳能科技有限公司 | A kind of four sides silicon solar cell and preparation method thereof |
-
2017
- 2017-01-20 CN CN201720092680.3U patent/CN206574725U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847959A (en) * | 2017-01-20 | 2017-06-13 | 广东爱康太阳能科技有限公司 | A kind of four sides silicon solar cell and preparation method thereof |
| CN106847959B (en) * | 2017-01-20 | 2018-10-09 | 广东爱康太阳能科技有限公司 | A kind of four sides silicon solar cell and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102222726B (en) | Technology for manufacturing interlaced back contact (IBC) crystalline silicon solar battery with ion implantation | |
| CN103887347B (en) | A kind of two-sided P-shaped crystalline silicon battery structure and preparation method thereof | |
| Zaidi | Introductory chapter: Introduction to photovoltaic effect | |
| JP6741867B2 (en) | P-type PERC double-sided light receiving solar cell, its module, system and manufacturing method | |
| CN101937944A (en) | Preparation method of double-sided passivated crystalline silicon solar cell | |
| CN101226968A (en) | Method for reducing series resistance value of light gathering solar battery and light gathering solar battery obtained by the method | |
| CN106711239A (en) | Preparation method of PERC solar battery and PERC solar battery | |
| CN107275432B (en) | Crystalline silicon solar cell and preparation method thereof | |
| CN105355671B (en) | A kind of wide spectrum high-efficiency solar photovoltaic battery | |
| CN102842646A (en) | Preparation method of interdigitated back-contact battery based on N-type substrate | |
| CN105355693A (en) | PERC solar photovoltaic cell capable of improving photoelectric conversion efficiency | |
| CN104201214A (en) | Back-passivated solar battery and preparation method thereof | |
| CN111697094A (en) | Light-transmitting double-sided cadmium telluride power generation glass and preparation method thereof | |
| JP2023507176A (en) | Bifacial tandem solar cells and modules | |
| CN103123812A (en) | Crystalline silicon solar cell aluminum paste | |
| CN102969368A (en) | Electrode structure of solar cell piece | |
| CN206574725U (en) | A kind of four sides silicon solar cell | |
| CN103618025B (en) | A kind of crystalline silicon back junction solar battery preparation method | |
| CN201364905Y (en) | Back-leading silicon solar cell with heterogeneous structure | |
| CN204315603U (en) | A kind of polished backside crystal silicon solar batteries | |
| CN204315591U (en) | A kind of selective emitter crystal silicon solar batteries | |
| CN106847959B (en) | A kind of four sides silicon solar cell and preparation method thereof | |
| CN206976375U (en) | A kind of crystal silicon solar energy battery | |
| CN102769072B (en) | N-type crystalline silicon solar cell and preparation method thereof | |
| CN204118080U (en) | A kind of passivating back solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171212 Address after: 322009 Zhejiang city in Jinhua Province town of Yiwu City, Su Fuk Road No. 126 Co-patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20171020 Effective date of abandoning: 20181009 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20171020 Effective date of abandoning: 20181009 |