CN206517723U - A kind of power semiconductor modular - Google Patents
A kind of power semiconductor modular Download PDFInfo
- Publication number
- CN206517723U CN206517723U CN201720080672.7U CN201720080672U CN206517723U CN 206517723 U CN206517723 U CN 206517723U CN 201720080672 U CN201720080672 U CN 201720080672U CN 206517723 U CN206517723 U CN 206517723U
- Authority
- CN
- China
- Prior art keywords
- power semiconductor
- change material
- semiconductor modular
- heat conduction
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 239000012782 phase change material Substances 0.000 claims abstract description 41
- 230000017525 heat dissipation Effects 0.000 claims abstract description 23
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 12
- 239000010959 steel Substances 0.000 claims abstract description 12
- 238000007639 printing Methods 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 230000005855 radiation Effects 0.000 claims abstract description 4
- 238000010257 thawing Methods 0.000 claims abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 6
- 239000004519 grease Substances 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 230000009466 transformation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A kind of power semiconductor modular, it includes a power semiconductor modular, the heat conduction phase-change material of heated thawing is coated with the bottom heat radiation interface of the power semiconductor modular, separately it is installed with the heat dissipation interface of power semiconductor modular in radiator, and space of the heat conduction phase-change material between heat dissipation interface and radiator；Described preparation method includes：a）After the making of ordinary power semiconductor module is completed, using steel mesh printing technology, thermal interface, the i.e. heat dissipation interface coated with thermally conductive phase-change material in power semiconductor modular bottom surface；b）Heat conduction phase-change material coating is toasted after completing using baking oven, and baking temperature places 12 hours after the completion of 80-100 DEG C, baking under normal temperature condition, the phase-change material for being coated in thermal interface surface is cured to the state of solid；c）Heat conduction phase-change material keeps shape during printing after solid is cured to, still.
Description
Technical field
The utility model relates to a kind of power semiconductor modular of precoating phase-change material, belong to power semiconductor mould
Block technical field.
Background technology
Conventional power model is when dispatching from the factory at present, and the base plate bottom of power model is not coated by any Heat Conduction Material, but
When power model is installed on radiator, heat-conducting silicone grease is coated in the bottom surface of power model.In power model running, lead to
Heat-conducting silicone grease is crossed to conduct the heat of power model to radiator.But the heat conductivility of heat-conducting silicone grease is not excellent, current city
The heat-conducting silicone grease capacity of heat transmission commonly used on field is comparatively poor, determines that the thermal resistance of heat-conducting silicone grease account for by its material property whole
50% or so of individual module thermal resistance.Therefore existing market needs a kind of more excellent thermal interfacial material of heat conductivility, hoisting module
Integral heat sink ability.
The content of the invention
The purpose of this utility model is to overcome the shortcomings of that prior art is present, and provides a kind of simple in construction, user
Just, the heat dispersion of power model can be improved, power model service life, precoating phase-change material power semiconductor is improved
Module and preparation method thereof.
The purpose of this utility model is completed by following technical solution, a kind of power semiconductor modular, and it includes
The heat conduction phase transformation material of heated thawing is coated with one power semiconductor modular, the bottom heat radiation interface of the power semiconductor modular
Material, is separately installed with radiator on the heat dissipation interface of power semiconductor modular, and the heat conduction phase-change material is between radiating
In space between interface and radiator.
As preferred：The power semiconductor modular bottom surface carries copper radiating bottom plate；Coated by described heat dissipation interface
Heat conduction phase-change material, its thickness range is 0.05mm --- between 0.20mm.
As preferred：Described heat conduction phase-change material is printed using steel mesh printing technology, single hole on described steel mesh
It is shaped as the shape for being easy to array arrangement of circle, rectangle, hexagon or Else Rule.
A kind of preparation method of power semiconductor modular as described above, described preparation method comprises the following steps：
a）After the making of ordinary power semiconductor module is completed, using steel mesh printing technology, in power semiconductor mould
The thermal interface of block bottom surface, i.e. heat dissipation interface coated with thermally conductive phase-change material；
b）Heat conduction phase-change material coating is toasted after completing using baking oven, and baking temperature is after the completion of 80-100 DEG C, baking
1-2 hour is placed under normal temperature condition, the phase-change material for being coated in thermal interface surface is cured to the state of solid；
c）Heat conduction phase-change material keeps shape during printing after solid is cured to, still.
As preferred：Described power semiconductor modular is being installed on radiator, because heat conduction phase-change material is solid-state,
There is space between the heat dissipation interface and radiator of power semiconductor, do not filled up by heat dissipation interface material, heat dissipation interface material
Refer to being coated in the heat conduction phase-change material of power semiconductor modular heat dissipation interface；After internal semiconductor device heating, heat
Amount conduction to the heat conduction phase-change material being coated on heat dissipation interface, heat conduction phase-change material can fill up power semiconductor after melting
Space between module thermal interface and radiator, forms good heat-conducting effect.
Power semiconductor modular described in the utility model is in system initial start, because phase-change material is still belonged to admittedly
State, the system for being compared to soft contact material, be coated with the power semiconductor modular of phase-change material from chip to radiator it
Between thermal resistance than there is the power semiconductor modular of soft contact material can high 10%-15%.System operation starts heating, when module bottom plate
Temperature when rising to more than 45 DEG C, heat conduction phase-change material starts phase transition process, gradually by original Solid State Transformation into liquid, phase
Become the thickness that material liquefaction can start to transform to optimize later.During original state, because the temperature of radiator is also arrived at 45 DEG C
Between 50 DEG C, therefore slightly higher thermal resistance can't cause the excess temperature of power semiconductor modular to damage.
After power semiconductor modular is installed in system, in the burn-in test of system, whole system can be heated, this
Sample just provides time enough to the liquefaction of phase-change material.Heat conduction phase-change material starts liquefaction at 45 DEG C, in the very short time
Inside fill up the space between power semiconductor modular and radiator.The installation screw of module need not after phase-change material liquefaction
Again reinforce.
After system-down, when power semiconductor modular temperature drop is to less than 45 DEG C, phase-change material is solidified to again
Solid-state, system runs phase-change material after bottom plate is reheated again can melt again again, fill up power semiconductor modular and
Space between radiator.
Brief description of the drawings
Fig. 1 is that power semiconductor modular described in the utility model is installed to the later system schematic of radiator.
Fig. 2 is the power semiconductor modular schematic diagram described in the utility model with copper radiating bottom plate.
Fig. 3 is the power semiconductor modular schematic diagram described in the utility model without copper radiating bottom plate.
Fig. 4 is power semiconductor modular heat dissipation interface schematic diagram described in the utility model.
Fig. 5 is the printed steel mesh graphic diagram of rectangular array arrangement described in the utility model.
Fig. 6 is the printed steel mesh graphic diagram of circular array arrangement described in the utility model.
Fig. 7 is the printed steel mesh graphic diagram of hexagonal array arrangement described in the utility model.
Embodiment
The utility model is described in detail below in conjunction with accompanying drawing：Shown in Fig. 1-7, one kind described in the utility model
The heat conduction phase transformation material of heated thawing is coated with power semiconductor modular, the bottom heat radiation interface 5 of the power semiconductor modular 1
Material 2, is separately installed with radiator 3 on the heat dissipation interface 5 of power semiconductor modular 1, and the heat conduction phase-change material 2 between
In space between heat dissipation interface 5 and radiator 3.
Described power semiconductor modular can include and high power module is arrived in copper heat-radiating substrate 4, as shown in Fig. 2
Can also be the small-power semiconductor module not comprising copper heat-radiating substrate, as shown in Figure 3.
The bottom surface of power semiconductor modular 1 carries copper radiating bottom plate；Heat conduction phase transformation coated by described heat dissipation interface 5
Material 2, its thickness range is 0.05mm --- between 0.20mm.
Described heat conduction phase-change material 2 is printed using steel mesh printing technology, and single hole is shaped as circle on described steel mesh
Shape, rectangle, the shape for being easy to array arrangement of hexagon or Else Rule, as shown in Fig. 5-7.
A kind of preparation method of power semiconductor modular as described above, described preparation method comprises the following steps：
a）After the making of ordinary power semiconductor module is completed, using steel mesh printing technology, in power semiconductor mould
The thermal interface 5 of the bottom surface of block 1, i.e. heat dissipation interface coated with thermally conductive phase-change material 2；
b）The coating of heat conduction phase-change material 2 is toasted after completing using baking oven, and baking temperature is at 80-100 DEG C, and baking is completed
1-2 hour is placed under normal temperature condition afterwards, the heat conduction phase-change material 2 for being coated in thermal interface surface is cured to the shape of solid
State；
c）Heat conduction phase-change material 2 keeps shape during printing after solid is cured to, still.
Power semiconductor modular 1 described in the utility model is being installed on radiator 3, because heat conduction phase-change material 2 is
, there is space between the heat dissipation interface 5 and radiator 3 of power semiconductor 1, do not filled up by heat dissipation interface material in solid-state, radiating
Boundary material refers to being coated in the heat conduction phase-change material 2 of the heat dissipation interface 5 of power semiconductor modular 1；Internal semiconductor devices
After heating, heat is conducted to the heat conduction phase-change material 2 being coated on heat dissipation interface, and heat conduction phase-change material can be filled out after melting
Space between full power semiconductor module thermal interface 5 and radiator 3, forms good heat-conducting effect.
Claims (3)
1. a kind of power semiconductor modular, it is characterised in that the power semiconductor modular（1）Bottom heat radiation interface on coat
There is the heat conduction phase-change material of heated thawing（2）, separately in power semiconductor modular（1）Heat dissipation interface（5）On be installed with it is scattered
Hot device（3）, and the heat conduction phase-change material（2）Between heat dissipation interface（5）With radiator（3）Between space in.
2. power semiconductor modular according to claim 1, it is characterised in that the power semiconductor modular（1）Bottom surface band
There is copper radiating bottom plate；Described heat dissipation interface（5）Coated heat conduction phase-change material（2）, its thickness range is 0.05mm ---
Between 0.20mm.
3. power semiconductor modular according to claim 1 or 2, it is characterised in that described heat conduction phase-change material（2）Make
Printed with steel mesh printing technology, single hole is shaped as the easy of circle, rectangle, hexagon or Else Rule on described steel mesh
In the shape of array arrangement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720080672.7U CN206517723U (en) | 2017-01-22 | 2017-01-22 | A kind of power semiconductor modular |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720080672.7U CN206517723U (en) | 2017-01-22 | 2017-01-22 | A kind of power semiconductor modular |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206517723U true CN206517723U (en) | 2017-09-22 |
Family
ID=59865930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720080672.7U Active CN206517723U (en) | 2017-01-22 | 2017-01-22 | A kind of power semiconductor modular |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206517723U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106817881A (en) * | 2017-01-22 | 2017-06-09 | 嘉兴斯达半导体股份有限公司 | A kind of power semiconductor modular and preparation method thereof |
-
2017
- 2017-01-22 CN CN201720080672.7U patent/CN206517723U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106817881A (en) * | 2017-01-22 | 2017-06-09 | 嘉兴斯达半导体股份有限公司 | A kind of power semiconductor modular and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Once welding method for power semiconductor module Effective date of registration: 20180726 Granted publication date: 20170922 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2018330000205 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20221020 Granted publication date: 20170922 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR Ltd. Registration number: 2018330000205 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No. 988 Kexing Road, Hunan District, Jiaxing City, Zhejiang Province, 314006 Patentee after: Star Semiconductor Co.,Ltd. Address before: No. 988 Kexing Road, Hunan District, Jiaxing City, Zhejiang Province, 314006 Patentee before: STARPOWER SEMICONDUCTOR Ltd. |
|
| CP01 | Change in the name or title of a patent holder |