CN103872001B - Active chip packaging mode - Google Patents
Active chip packaging mode Download PDFInfo
- Publication number
- CN103872001B CN103872001B CN201410066204.5A CN201410066204A CN103872001B CN 103872001 B CN103872001 B CN 103872001B CN 201410066204 A CN201410066204 A CN 201410066204A CN 103872001 B CN103872001 B CN 103872001B
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- CN
- China
- Prior art keywords
- plate
- thrermostatic bimetal
- chip
- bimetal
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 9
- 229920000642 polymer Polymers 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 230000010410 reperfusion Effects 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 239000002322 conducting polymer Substances 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000005022 packaging material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
Abstract
The invention relates to an active chip packaging mode. According to the active chip packaging mode, a chip packaging structure prepared by the mode comprises a chip main body, a heat conduction polymer packaging material layer and a thermal dual-metal piece electric conduction pin. The active chip packaging mode has the beneficial effects that when the chip heats, one end of the chip gets away from a PCB (printed circuit board) under the action of a thermal dual-metal piece assembly.
Description
Technical field
The present invention relates to chip encapsulation technology field, refers in particular to a kind of active chip package mode.
Background technology
At present, chip typically laminating pcb board is installed, and the heat that chip is produced mainly is shed by upper surface, therefore is sent out
The chip of heat can heat pcb board, and the temperature for causing pcb board is raised, and then shorten the electronic component on pcb board and pcb board surface
Life-span.The heating power of chip causes chip temperature to raise, and then causes the reduction in chip life-span, in order to reduce the temperature of chip
Degree, people are typically radiated in wafer surface attachment fin, and the area of dissipation of fin is fixed, due to long-term exposed
In air, fin surface can pile up increasing dust, cause the radiating efficiency of fin and reduce.
The content of the invention
The invention provides a kind of new active chip package mode so that chip when heating, the one of chip
End can be in the presence of pin away from pcb board, can be with run-off the straight so that away from pcb board, while allowing chip near pcb board
Lower surface can have thermolysis.
In order to achieve the above object, the present invention is adopted the following technical scheme that.
A kind of active chip package mode, the chip-packaging structure which is prepared includes chip body, heat conduction
Polymer encapsulation material layer, filament pin and a thrermostatic bimetal-plate component, chip package radiating mode includes following heat
Bimetal leaf component and step：
Thrermostatic bimetal-plate component includes thrermostatic bimetal-plate and silastic-layer, and the active layers of thrermostatic bimetal-plate are close to thermo bimetal
The passive layer of piece, the outer surface parcel fluorosioloxane rubber layer of thrermostatic bimetal-plate, the passive layer of thrermostatic bimetal-plate is close to chip body
Surface, formed chip surface fluorosioloxane rubber layer thrermostatic bimetal-plate passive layer the structure for contacting with each other；
Step 1, the passive layer of the active layers of thrermostatic bimetal-plate and thrermostatic bimetal-plate is bent, and by heat-treatment of annealing,
Eliminate the internal stress of curved bel；
Step 2, the passive layer that the active layers of thrermostatic bimetal-plate are close to thrermostatic bimetal-plate；
Step 3, thrermostatic bimetal-plate is pressed close to chip body surface position immerse liquid fluorosioloxane rubber, placement coagulated
Solid fluorosioloxane rubber layer；
Step 4, the surface that the passive layer of thrermostatic bimetal-plate is close to the chip body, by filament pin core is connected
The conducting position of piece main body, Reperfu- sion polymer encapsulation material forms the polymer encapsulation material layer of parcel chip body.
Preferably, above-mentioned thrermostatic bimetal-plate presses close to the position on chip body surface at least one hole for penetrating.
Preferably, above-mentioned thrermostatic bimetal-plate is welded on the position of pcb board and there was only single passive layer, without active layers.
Preferably, above-mentioned thrermostatic bimetal-plate has the position in circular shape.
The present invention operation principle and beneficial effect be：
The invention provides a kind of active chip package mode, due to the thermal expansion of active layers and passive layer after being heated
Coefficient is different, and the elongation of the active layers of thrermostatic bimetal-plate is more than the elongation of passive layer, the circular shape of thrermostatic bimetal-plate
Position can deform upon, and promote one end of chip of thrermostatic bimetal-plate connection away from pcb board so that chip position run-off the straight,
Convection current is formed after air heats so around the position of chip lower surface ingress of air, is conducive to radiating, while thermo bimetal
Piece also transmits the heat of chip in air, increases the total area of dissipation of chip, has reached the purpose of the present invention.Thermo bimetal
Piece presses close to the position on chip body surface at least one hole for penetrating, and polymer encapsulation material layer can be allowed to penetrate hole straight
Connect and chip body contact, improve the stability of encapsulating structure.Fluorosioloxane rubber layer wraps up thrermostatic bimetal-plate and pastes with chip body
Near surface, plays a part of insulation.In addition, thrermostatic bimetal-plate is transmitted heat in air from chip surface, radiating is increased
Area, while can drive the filling of the air of surrounding after hot-air flowing, especially drives the flowing of beneath chips air, rises
More preferable radiating effect is arrived.
Description of the drawings
Fig. 1 is the schematic diagram in the section of the chip-packaging structure of the present invention.
Description of the drawings：1st, chip body；2nd, polymer encapsulation material layer；3rd, active layers；4th, passive layer;5th, pcb board；6、
Filament pin.
Specific embodiment
For the ease of the understanding of those skilled in the art, the present invention is made further with reference to embodiment and accompanying drawing
It is bright, the content that embodiment is referred to not limitation of the invention.
With reference to shown in Fig. 1, a kind of active chip package mode, the chip-packaging structure which is prepared includes core
Piece main body 1, heat-conducting polymer encapsulating material layer 2, filament pin 6 and a thrermostatic bimetal-plate component, chip package radiating
Mode includes following thrermostatic bimetal-plate component and step：
Thrermostatic bimetal-plate component includes thrermostatic bimetal-plate and silastic-layer, and the active layers 3 of thrermostatic bimetal-plate are close to hot double gold
The passive layer 4 of category piece, the outer surface parcel fluorosioloxane rubber layer of thrermostatic bimetal-plate, the passive layer 4 of thrermostatic bimetal-plate is close to chip master
The surface of body 1, formed chip surface fluorosioloxane rubber layer thrermostatic bimetal-plate passive layer the structure for contacting with each other；
Step 1, the passive layer 4 of the active layers 3 of thrermostatic bimetal-plate and thrermostatic bimetal-plate is bent, and moved back by heat treatment
Fire, eliminates the internal stress of curved bel；
Step 2, the passive layer 4 that the active layers 3 of thrermostatic bimetal-plate are close to thrermostatic bimetal-plate；
The fluorosioloxane rubber of liquid is immersed at step 3, the position that thrermostatic bimetal-plate pressed close to the surface of chip body 1, and placement obtains
The fluorosioloxane rubber layer of solidification；
Step 4, the surface that the passive layer of thrermostatic bimetal-plate is close to the chip body 1, filament pin 6 is connected
The conducting position of chip body 1, Reperfu- sion polymer encapsulation material forms the polymer encapsulation material layer of parcel chip body 1
2。
Thrermostatic bimetal-plate presses close to the position on the surface of chip body 1 at least one hole for penetrating.
Thrermostatic bimetal-plate is welded on the position of pcb board 5 and there was only single passive layer 4, without active layers 3.
Thrermostatic bimetal-plate has the position in circular shape.
Above-described embodiment is the present invention preferably embodiment, and in addition, the present invention can be realized with alternate manner,
Any obvious replacement is within protection scope of the present invention on the premise of without departing from present inventive concept.
Claims (4)
1. a kind of active chip package mode, it is characterised in that：The chip-packaging structure which is prepared includes chip
Main body, heat-conducting polymer encapsulating material layer, filament pin and a thrermostatic bimetal-plate component, the active chip package
Mode includes following thrermostatic bimetal-plate component and step：
The thrermostatic bimetal-plate component includes thrermostatic bimetal-plate and fluorosioloxane rubber layer, and the active layers of the thrermostatic bimetal-plate are close to heat
The passive layer of bimetal leaf, the outer surface parcel fluorosioloxane rubber layer of the thrermostatic bimetal-plate, the passive layer of the thrermostatic bimetal-plate
Be close to the surface of the chip body, formed chip surface fluorosioloxane rubber layer the passive layer of thrermostatic bimetal-plate contact with each other
Structure；
Step 1, the passive layer of the active layers of the thrermostatic bimetal-plate and thrermostatic bimetal-plate is bent, and by heat-treatment of annealing,
Eliminate the internal stress of curved bel；
Step 2, the passive layer that the active layers of the thrermostatic bimetal-plate are close to thrermostatic bimetal-plate；
Step 3, thrermostatic bimetal-plate is pressed close to chip body surface position immerse liquid fluorosioloxane rubber, placement obtain solidify
Fluorosioloxane rubber layer；
Step 4, the surface that the passive layer of thrermostatic bimetal-plate is close to the chip body, by the filament pin core is connected
The conducting position of piece main body, Reperfu- sion polymer encapsulation material forms the polymer encapsulation material layer of parcel chip body.
2. a kind of active chip package mode according to claim 1, it is characterised in that：The thrermostatic bimetal-plate is pressed close to
There is at least one hole for penetrating at the position on chip body surface.
3. a kind of active chip package mode according to claim 1, it is characterised in that：The thrermostatic bimetal-plate welding
There was only single passive layer at the position of pcb board, without active layers.
4. a kind of active chip package mode according to claim 1, it is characterised in that：The thrermostatic bimetal-plate has
The position of circular shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410066204.5A CN103872001B (en) | 2014-02-26 | 2014-02-26 | Active chip packaging mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410066204.5A CN103872001B (en) | 2014-02-26 | 2014-02-26 | Active chip packaging mode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103872001A CN103872001A (en) | 2014-06-18 |
| CN103872001B true CN103872001B (en) | 2017-04-19 |
Family
ID=50910392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410066204.5A Active CN103872001B (en) | 2014-02-26 | 2014-02-26 | Active chip packaging mode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103872001B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI516198B (en) * | 2014-06-06 | 2016-01-01 | 緯創資通股份有限公司 | Heat dissipation module and electronic device with the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333772B1 (en) * | 1999-01-06 | 2001-12-25 | Canon Kabushiki Kaisha | LCD with bimetal switch between panel and heat sink for regulating temperature of panel |
| CN102054929A (en) * | 2009-10-22 | 2011-05-11 | Nxp股份有限公司 | Apparatus for regulating the temperature of a light emitting diode |
| CN103227156A (en) * | 2012-01-30 | 2013-07-31 | 英飞凌科技股份有限公司 | System and method for an electronic package with a fail-open mechanism |
-
2014
- 2014-02-26 CN CN201410066204.5A patent/CN103872001B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333772B1 (en) * | 1999-01-06 | 2001-12-25 | Canon Kabushiki Kaisha | LCD with bimetal switch between panel and heat sink for regulating temperature of panel |
| CN102054929A (en) * | 2009-10-22 | 2011-05-11 | Nxp股份有限公司 | Apparatus for regulating the temperature of a light emitting diode |
| CN103227156A (en) * | 2012-01-30 | 2013-07-31 | 英飞凌科技股份有限公司 | System and method for an electronic package with a fail-open mechanism |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103872001A (en) | 2014-06-18 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160520 Address after: 343000 Jinggangshan export processing zone, Jiangxi, No. Torch Road, No. 192 Applicant after: JIANGXI CHUANGCHENG ELECTRONIC CO., LTD. Address before: 343000 Jinggangshan export processing zone, Ji'an, Jiangxi (Jiangxi, Ji'an) Applicant before: JIANGXI CHUANGCHENG SEMICONDUCTOR CO., LTD. |
|
| CB03 | Change of inventor or designer information |
Inventor after: Su Shaoshuang Inventor after: Liang Xiaojiang Inventor after: You Ping Inventor before: Su Shaoshuang Inventor before: Liang Xiaojiang Inventor before: Zhou Yongdong |
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| CB03 | Change of inventor or designer information | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170314 Address after: 518055 Guangdong city of Shenzhen province Nanshan District City Pingshan road Xili University Industrial District 5 Building 3 floor Da Yuan Applicant after: Shenzhen Chuangcheng Microelectronics Co., Ltd. Address before: 343000 Jinggangshan export processing zone, Jiangxi, No. Torch Road, No. 192 Applicant before: JIANGXI CHUANGCHENG ELECTRONIC CO., LTD. |
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| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: An active chip packaging method Effective date of registration: 20210122 Granted publication date: 20170419 Pledgee: Bank of Communications Limited Shenzhen Branch Pledgor: SHENZHEN CHUANGCHENG MICROELECTRONICS Co.,Ltd. Registration number: Y2021980000614 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
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Address after: 518055 2201, 2202, 2203, 2204, 2205, block a, building 8, Shenzhen International Innovation Valley, Dashi 1st Road, Xili community, Nanshan District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN CHUANGCHENG MICROELECTRONICS Co.,Ltd. Address before: 518055 3rd floor, building 5, Dayuan industrial North District, Pingshan 1st Road, Xili University Town, Nanshan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN CHUANGCHENG MICROELECTRONICS Co.,Ltd. |
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