CN103872001A - Active chip packaging mode - Google Patents
Active chip packaging mode Download PDFInfo
- Publication number
- CN103872001A CN103872001A CN201410066204.5A CN201410066204A CN103872001A CN 103872001 A CN103872001 A CN 103872001A CN 201410066204 A CN201410066204 A CN 201410066204A CN 103872001 A CN103872001 A CN 103872001A
- Authority
- CN
- China
- Prior art keywords
- plate
- chip
- thrermostatic bimetal
- bimetal
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims description 11
- 229920002521 macromolecule Polymers 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 239000002322 conducting polymer Substances 0.000 claims description 3
- 229920001940 conductive polymer Polymers 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000005022 packaging material Substances 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000003570 air Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000012080 ambient air Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
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Abstract
The invention relates to an active chip packaging mode. According to the active chip packaging mode, a chip packaging structure prepared by the mode comprises a chip main body, a heat conduction polymer packaging material layer and a thermal dual-metal piece electric conduction pin. The active chip packaging mode has the beneficial effects that when the chip heats, one end of the chip gets away from a PCB (printed circuit board) under the action of a thermal dual-metal piece assembly.
Description
Technical field
The present invention relates to chip encapsulation technology field, refer in particular to a kind of active chip package mode.
Background technology
At present, the chip pcb board of normally fitting is installed, and the heat that chip produces mainly sheds by upper surface, and therefore the chip of heating can heat pcb board, causes the temperature of pcb board to raise, and then shortens the life-span of the electronic component on pcb board and pcb board surface.The heating power of chip causes chip temperature to raise, and then cause the reduction in chip life-span, in order to reduce the temperature of chip, people are generally dispelled the heat at chip surface laminating fin, the area of dissipation of fin is fixed, in long-term exposed air, fin surface can be piled up increasing dust, causes the radiating efficiency of fin to reduce.
Summary of the invention
The invention provides a kind of new active chip package mode, make chip in heating, one end of chip can be away from pcb board under the effect of pin, can run-off the straight, make away from pcb board, allow chip can have thermolysis near the lower surface of pcb board simultaneously.
In order to achieve the above object, the present invention adopts following technical scheme.
A kind of active chip package mode, the chip-packaging structure which prepares comprises chip body, heat-conducting polymer encapsulating material layer, filament pin and thermo bimetal's chip module, and chip package radiating mode comprises following thermo bimetal's chip module and step:
Thermo bimetal's chip module comprises thrermostatic bimetal-plate and silastic-layer, the active layers of thrermostatic bimetal-plate is close to the passive layer of thrermostatic bimetal-plate, the passive layer of thrermostatic bimetal-plate is close to the surface of chip body, and thrermostatic bimetal-plate is pressed close to the position outer surface parcel fluorosioloxane rubber layer on chip body surface;
Step 1, by the passive layer bending of the active layers of thrermostatic bimetal-plate and thrermostatic bimetal-plate, and by heat-treatment of annealing, eliminate the bending internal stress bringing;
Step 2, the active layers of thrermostatic bimetal-plate is close to the passive layer of thrermostatic bimetal-plate;
Liquid fluorosioloxane rubber is immersed at step 3, the position that thrermostatic bimetal-plate is pressed close to chip body surface, places the fluorosioloxane rubber layer that obtains solidifying;
The surface of chip body is close at step 4, the position that thrermostatic bimetal-plate is coated with to fluorosioloxane rubber layer, filament pin is connected to the conducting position of chip body, then pours into macromolecule encapsulating material, forms the macromolecule encapsulating material layer of parcel chip body.
Better, above-mentioned thrermostatic bimetal-plate is pressed close to the hole that the position on chip body surface has at least one to penetrate.
Better, above-mentioned thrermostatic bimetal-plate is welded on the position of pcb board and only has independent passive layer, there is no active layers.
Better, above-mentioned thrermostatic bimetal-plate has the position that is circular shape.
Operation principle of the present invention and beneficial effect are:
The invention provides a kind of active chip package mode, after being heated because the thermal coefficient of expansion of active layers and passive layer is different, the elongation of the active layers of thrermostatic bimetal-plate is greater than the elongation of passive layer, can there is deformation in the position of the circular shape of thrermostatic bimetal-plate, one end of the chip that promotion thrermostatic bimetal-plate connects is away from pcb board, make chip position run-off the straight, the position ambient air of chip lower surface ingress of air forms convection current after being heated like this, be conducive to heat radiation, the heat that thrermostatic bimetal-plate also transmits chip is simultaneously in air, increase the total area of dissipation of chip, reach object of the present invention.Thrermostatic bimetal-plate is pressed close to the hole that the position on chip body surface has at least one to penetrate, and can allow macromolecule encapsulating material layer penetrate hole and directly contact with chip body, has improved the stability of encapsulating structure.The surface that fluorosioloxane rubber layer parcel thrermostatic bimetal-plate and chip body are pressed close to, plays the effect of insulation.In addition, thrermostatic bimetal-plate transmits heat to air from chip surface, has increased area of dissipation, and hot-air can drive the filling of ambient air after flowing simultaneously, especially drives flowing of chip below air, has played better radiating effect.
Accompanying drawing explanation
Fig. 1 is the schematic diagram in the cross section of chip-packaging structure of the present invention.
Accompanying drawing explanation: 1, chip body; 2, macromolecule encapsulating material layer; 3, active layers; 4, passive layer; 5, pcb board; 6, filament pin.
Embodiment
For the ease of those skilled in the art's understanding, below in conjunction with embodiment and accompanying drawing, the present invention is further illustrated, and the content that execution mode is mentioned not is limitation of the invention.
Shown in Fig. 1, a kind of active chip package mode, the chip-packaging structure which prepares comprises chip body 1, heat-conducting polymer encapsulating material layer 2, filament pin 6 and thermo bimetal's chip module, and chip package radiating mode comprises following thermo bimetal's chip module and step:
Thermo bimetal's chip module comprises thrermostatic bimetal-plate and silastic-layer, the active layers 3 of thrermostatic bimetal-plate is close to the passive layer 4 of thrermostatic bimetal-plate, the passive layer 4 of thrermostatic bimetal-plate is close to the surface of chip body 1, and thrermostatic bimetal-plate is pressed close to the position outer surface parcel fluorosioloxane rubber layer on chip body 1 surface;
Step 1, by 4 bendings of the passive layer of the active layers of thrermostatic bimetal-plate 3 and thrermostatic bimetal-plate, and by heat-treatment of annealing, eliminate the bending internal stress bringing;
Step 2, the active layers of thrermostatic bimetal-plate 3 is close to the passive layer 4 of thrermostatic bimetal-plate;
Liquid fluorosioloxane rubber is immersed at step 3, the position that thrermostatic bimetal-plate is pressed close to chip body 1 surface, places the fluorosioloxane rubber layer that obtains solidifying;
The surface of chip body 1 is close at step 4, the position that thrermostatic bimetal-plate is coated with to fluorosioloxane rubber layer, filament pin 6 is connected to the conducting position of chip body 1, pour into again macromolecule encapsulating material, form the macromolecule encapsulating material layer 2 of parcel chip body 1.
Thrermostatic bimetal-plate is pressed close to the hole that the position on chip body 1 surface has at least one to penetrate.
Thrermostatic bimetal-plate is welded on the position of pcb board 5 and only has independent passive layer 4, there is no active layers 3.
Thrermostatic bimetal-plate has the position that is circular shape.
Above-described embodiment is preferably embodiment of the present invention, and in addition, the present invention can also realize by alternate manner, and any apparent replacement is all within protection scope of the present invention without departing from the inventive concept of the premise.
Claims (4)
1. an active chip package mode, it is characterized in that: the chip-packaging structure which prepares comprises chip body, heat-conducting polymer encapsulating material layer, filament pin and thermo bimetal's chip module, described active chip package mode comprises following thermo bimetal's chip module and step:
Described thermo bimetal's chip module comprises thrermostatic bimetal-plate and silastic-layer, the active layers of described thrermostatic bimetal-plate is close to the passive layer of thrermostatic bimetal-plate, the passive layer of described thrermostatic bimetal-plate is close to the surface of described chip body, and described thrermostatic bimetal-plate is pressed close to the position outer surface parcel fluorosioloxane rubber layer on chip body surface;
Step 1, by the passive layer bending of the active layers of described thrermostatic bimetal-plate and thrermostatic bimetal-plate, and by heat-treatment of annealing, eliminate the bending internal stress bringing;
Step 2, the active layers of described thrermostatic bimetal-plate is close to the passive layer of thrermostatic bimetal-plate;
Liquid fluorosioloxane rubber is immersed at step 3, the position that thrermostatic bimetal-plate is pressed close to chip body surface, places the fluorosioloxane rubber layer that obtains solidifying;
The surface of described chip body is close at step 4, the position that thrermostatic bimetal-plate is coated with to fluorosioloxane rubber layer, described filament pin is connected to the conducting position of chip body, pour into again macromolecule encapsulating material, form the macromolecule encapsulating material layer of parcel chip body.
2. the active chip package mode of one according to claim 1, is characterized in that: described thrermostatic bimetal-plate is pressed close to the hole that the position on chip body surface has at least one to penetrate.
3. the active chip package mode of one according to claim 1, is characterized in that: described thrermostatic bimetal-plate is welded on the position of pcb board and only has independent passive layer, there is no active layers.
4. the active chip package mode of one according to claim 1, is characterized in that: described thrermostatic bimetal-plate has the position that is circular shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410066204.5A CN103872001B (en) | 2014-02-26 | 2014-02-26 | Active chip packaging mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410066204.5A CN103872001B (en) | 2014-02-26 | 2014-02-26 | Active chip packaging mode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103872001A true CN103872001A (en) | 2014-06-18 |
| CN103872001B CN103872001B (en) | 2017-04-19 |
Family
ID=50910392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410066204.5A Active CN103872001B (en) | 2014-02-26 | 2014-02-26 | Active chip packaging mode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103872001B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105307451A (en) * | 2014-06-06 | 2016-02-03 | 纬创资通股份有限公司 | Heat radiation module and electronic device with same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333772B1 (en) * | 1999-01-06 | 2001-12-25 | Canon Kabushiki Kaisha | LCD with bimetal switch between panel and heat sink for regulating temperature of panel |
| CN102054929A (en) * | 2009-10-22 | 2011-05-11 | Nxp股份有限公司 | Apparatus for regulating the temperature of a light emitting diode |
| CN103227156A (en) * | 2012-01-30 | 2013-07-31 | 英飞凌科技股份有限公司 | System and method for an electronic package with a fail-open mechanism |
-
2014
- 2014-02-26 CN CN201410066204.5A patent/CN103872001B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333772B1 (en) * | 1999-01-06 | 2001-12-25 | Canon Kabushiki Kaisha | LCD with bimetal switch between panel and heat sink for regulating temperature of panel |
| CN102054929A (en) * | 2009-10-22 | 2011-05-11 | Nxp股份有限公司 | Apparatus for regulating the temperature of a light emitting diode |
| CN103227156A (en) * | 2012-01-30 | 2013-07-31 | 英飞凌科技股份有限公司 | System and method for an electronic package with a fail-open mechanism |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105307451A (en) * | 2014-06-06 | 2016-02-03 | 纬创资通股份有限公司 | Heat radiation module and electronic device with same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103872001B (en) | 2017-04-19 |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160520 Address after: 343000 Jinggangshan export processing zone, Jiangxi, No. Torch Road, No. 192 Applicant after: JIANGXI CHUANGCHENG ELECTRONIC CO., LTD. Address before: 343000 Jinggangshan export processing zone, Ji'an, Jiangxi (Jiangxi, Ji'an) Applicant before: JIANGXI CHUANGCHENG SEMICONDUCTOR CO., LTD. |
|
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Su Shaoshuang Inventor after: Liang Xiaojiang Inventor after: You Ping Inventor before: Su Shaoshuang Inventor before: Liang Xiaojiang Inventor before: Zhou Yongdong |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20170314 Address after: 518055 Guangdong city of Shenzhen province Nanshan District City Pingshan road Xili University Industrial District 5 Building 3 floor Da Yuan Applicant after: Shenzhen Chuangcheng Microelectronics Co., Ltd. Address before: 343000 Jinggangshan export processing zone, Jiangxi, No. Torch Road, No. 192 Applicant before: JIANGXI CHUANGCHENG ELECTRONIC CO., LTD. |
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| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: An active chip packaging method Effective date of registration: 20210122 Granted publication date: 20170419 Pledgee: Bank of Communications Limited Shenzhen Branch Pledgor: SHENZHEN CHUANGCHENG MICROELECTRONICS Co.,Ltd. Registration number: Y2021980000614 |
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| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 518055 2201, 2202, 2203, 2204, 2205, block a, building 8, Shenzhen International Innovation Valley, Dashi 1st Road, Xili community, Nanshan District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN CHUANGCHENG MICROELECTRONICS Co.,Ltd. Address before: 518055 3rd floor, building 5, Dayuan industrial North District, Pingshan 1st Road, Xili University Town, Nanshan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN CHUANGCHENG MICROELECTRONICS Co.,Ltd. |